GaN, Wireless Power Transfer, Power Devices

080903-微电子学与固体电子学

化合物半导体器件与物理；电路与系统

   

[1] IEEE Microwave and Wireless Technology Letters. 2024,   通讯作者  
[2] IEEE Transactions on Microwave Theory and Techniques (T-MTT). 2024,   通讯作者  
[3] 康玄武. High-Efficiency and High-Power Rectifiers Using Cost-Effective AlGaN/GaN Schottky Diode With Accurate Large-Signal Parameter Extraction. IEEE Microwave and Wireless Technology Letters[J]. 2024, 第 1 作者
[4] 邓世雄, 刘继斌, 刘培国, 高长征, 康玄武. 基于准垂直结构GaN肖特基二极管的S波段限幅器研究. 微波学报. 2023, 第 5 作者39(3): 51-54, http://lib.cqvip.com/Qikan/Article/Detail?id=7110047525.
[5] Zhao, Rikang, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Huang, Yuyan, Sun, Yihang, Deng, Shixiong, Wei, Ke, Liu, Xinyu. High-Power GaN SBD Limiter for Sub-6G With Fast Response and Recovery. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS. 2023, 第 2 作者  通讯作者  http://dx.doi.org/10.1109/LMWT.2023.3332680.
[6] Zhao, Rikang, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Nan, Deng, Shixiong, Wei, Ke, Liu, Xinyu. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes. IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS[J]. 2023, 第 2 作者  通讯作者  33(2): 208-211, http://dx.doi.org/10.1109/LMWC.2022.3204546.
[7] Wu Hao, Kang Xuanwu, Zheng Yingkui, Wei Ke, Zhang Lin, Liu Xinyu, Zhang Guoqi. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis. Journal of Semiconductors[J]. 2022, 第 2 作者43(6): 1-8, https://doi.org/10.1088/1674-4926/43/6/062803.
[8] Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Zhao, Rikang, Yuan, Yafei, Liu, Xinyu, Zhang, Guoqi. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022, 第 2 作者  通讯作者  
[9] 崔艺馨, 马英起, 上官士鹏, 康玄武, 刘鹏程, 韩建伟. 空间用GaN功率器件单粒子烧毁效应激光定量模拟技术研究. 物理学报[J]. 2022, 第 4 作者71(13): 301-310, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.71.20212297.
[10] 陈延博, 杨兵, 康玄武, 郑英奎, 张静, 吴昊, 刘新宇. CMOS兼容的Si基GaN准垂直结构肖特基势垒二极管. 半导体技术[J]. 2022, 第 3 作者47(3): 179-183, http://lib.cqvip.com/Qikan/Article/Detail?id=7106888500.
[11] Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. MICROMACHINES[J]. 2022, 第 2 作者  通讯作者  13(5): http://dx.doi.org/10.3390/mi13050748.
[12] 赵媛媛, 郑英奎, 康玄武, 孙跃, 吴昊, 魏珂, 刘新宇. Ar离子注入边缘终端准垂直GaN肖特基势垒二极管. 半导体技术[J]. 2021, 第 3 作者46(8): 623-629,644, http://lib.cqvip.com/Qikan/Article/Detail?id=7105389584.
[13] Li, Pengfei, Wei, Shuhua, Kang, Xuanwu, Zheng, Yingkui, Zhang, Jing, Wu, Hao, Wei, Ke, Yan, Jiang, Liu, Xinyu. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate. ELECTRONICS[J]. 2021, 第 3 作者  通讯作者  10(7): https://doaj.org/article/75e93faa619e4744a88c935bdc1008d3.
[14] Kang, Xuanwu, Sun, Yue, Zheng, Yingkui, Wei, Ke, Wu, Hao, Zhao, Yuanyuan, Liu, Xinyu, Zhang, Guoqi. Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 第 1 作者  通讯作者  68(3): 1369-1373, http://dx.doi.org/10.1109/TED.2021.3050739.
[15] 刘芷诫, 郑英奎, 康玄武, 孙跃, 吴昊, 陈晓娟, 魏珂. AlGaN/GaN非凹槽混合阳极SBD射频性能及建模. 半导体技术[J]. 2021, 第 3 作者46(5): 358-364+381, http://lib.cqvip.com/Qikan/Article/Detail?id=7104818796.
[16] Sun, Yue, Kang, Xuanwu, Deng, Shixiong, Zheng, Yingkui, Wei, Ke, Xu, Linwang, Wu, Hao, Liu, Xinyu. First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology. ELECTRONICS[J]. 2021, 第 2 作者  通讯作者  10(4): https://doaj.org/article/fc98604ca94a4b3f938abce9ff903c9c.
[17] Sun, Yue, Kang, Xuanwu, Deng, Shixiong, Zheng, Yingkui, Wei, Ke, Xu, Linwang, Wu, Hao, Liu, Xinyu. High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2021, 第 2 作者  通讯作者  36(3): http://dx.doi.org/10.1088/1361-6641/abd835.
[18] Bi, Lan, Kang, Xuanwu, Wang, Xinhua, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Huang, Sen, Liu, Xinyu. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 第 2 作者68(4): 1778-1783, http://dx.doi.org/10.1109/TED.2021.3058114.
[19] Wu, Hao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Sun, Yue, Li, Pengfei, Liu, Xinyu, Zhang, Guoqi. Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 2 作者  通讯作者  60(2): http://dx.doi.org/10.35848/1347-4065/abd86f.
[20] 李鹏飞, 魏淑华, 康玄武, 张静, 吴昊, 孙跃, 郑英奎. 氧等离子体表面处理对AlGaN/GaN HEMT欧姆接触的影响. 半导体技术[J]. 2021, 第 3 作者46(2): 134-138,168, http://lib.cqvip.com/Qikan/Article/Detail?id=7104194457.
[21] Hu, Zhuangzhuang, Li, Jianguo, Zhao, Chunyong, Feng, Zhaoqing, Tian, Xusheng, Zhang, Yanni, Zhang, Yachao, Ning, Jing, Zhou, Hong, Zhang, Chunfu, Lv, Yuanjie, Kang, Xuanwu, Feng, Hao, Feng, Qian, Zhang, Jincheng, Hao, Yue. Design and Fabrication of Vertical Metal/TiO2/beta-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 第 12 作者67(12): 5628-5632, http://dx.doi.org/10.1109/TED.2020.3033787.
[22] Hu, Zhuangzhuang, Zhou, Hong, Kang, Xuanwu, Zhang, Jincheng, Hao, Yue, Lv, Yuanjie, Zhao, Chunyong, Feng, Qian, Feng, Zhaoqing, Dang, Kui, Tian, Xusheng, Zhang, Yachao, Ning, Jing. Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 第 3 作者41(3): 441-444, http://dx.doi.org/10.1109/LED.2020.2968587.
[23] Feng, Zhaoqing, Cai, Yuncong, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Lu, Xing, Kang, Xuanwu, Ning, Jing, Zhang, Chunfu, Feng, Qian, Zhang, Jincheng, Zhou, Hong, Hao, Yue. Design and fabrication of field-plated normally off beta-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application. APPLIEDPHYSICSLETTERS[J]. 2020, 第 7 作者116(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000542954700001.
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[25] Xiao Yifan, Min Long, Liu Xinke, Liu Wenjun, Younis Usman, Peng Tonghua, Kang Xuanwu, Wu Xiaohan, Ding Shijin, Zhang David Wei. Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition. NANOPHOTONICS[J]. 2020, 第 7 作者9(9): 3035-3044, https://doaj.org/article/ca52c68e497140feb77445d69fd82ee7.
[26] 赵志波, 杨兵, 康玄武, 张静, 吴昊, 孙跃, 郑英奎, 魏珂. 退火处理降低AlGaN/GaN台面隔离电流. 半导体技术[J]. 2020, 第 3 作者45(4): 293-297,311, http://lib.cqvip.com/Qikan/Article/Detail?id=7101693229.
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[28] Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Li, Pengfei, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. NANOMATERIALS[J]. 2020, 第 2 作者  通讯作者  10(4): https://doaj.org/article/a15e7c507cdb4838894bd3db7a0f4c4d.
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[30] 康玄武, 郑英奎, 王鑫华, 黄森, 魏珂, 吴昊, 孙跃, 赵志波, 刘新宇. AlGaN/GaN异质结肖特基二极管研究进展. 电源学报[J]. 2019, 第 1 作者17(3): 44-52, http://lib.cqvip.com/Qikan/Article/Detail?id=7002181403.
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[38] 黄森, 魏珂, 章晋汉, 康玄武, 王鑫华. Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS. Power Semiconductor Devices and IC's (ISPSD). 2017, 第 4 作者http://159.226.55.106/handle/172511/18240.
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