集成电路先导工艺技术
CMOS器件与工艺；半导体器件与工艺

材料、化学以及电子工程相关专业学生

080903-微电子学与固体电子学
080901-物理电子学

集成电路先导工艺技术
CMOS器件与工艺；半导体器件与工艺

2006-09--2010-06   瑞典皇家工学院（KTH）   工学博士
2005-09--2006-09   复旦大学   博士在读
2002-09--2005-07   厦门大学   工学硕士
1998-09--2002-07   中国地质大学（武汉）   工学学士

研究生

工学博士

   

2017-05~现在, 中国科学院微电子研究所, 研究员
2010-08~2017-04,中科院微电子所, 助理研究员/副研究员

2016-06-29-2019-04-28,Journal of Materials Science: Materials in Electronics, 副主编

半导体工艺与制造技术
先进半导体器件物理与工艺技术
Si基CMOS和光子学的新兴技术
高等计算电磁学
半导体制造技术
集成电路制造工艺与设备

   

（1） 中国科学院“朱李月华优秀教师奖”, 院级, 2017
（2） 中国专利优秀奖, 部委级, 2017

（ 1 ） Semiconductor device and manufacturing method thereof, 发明, 2015, 第 1 作者, 专利号: 9,012,965
（ 2 ） METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, 发明, 2015, 第 1 作者, 专利号: 8,987,127
（ 3 ） METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, 发明, 2015, 第 1 作者, 专利号: 8,946,071
（ 4 ） SEMICONDUCTOR DEVICE STRUCTURE, METHOD FOR MANUFACTURING THE SAME, And method for manufacturing fin, 发明, 2015, 第 3 作者, 专利号: 9,070,719
（ 5 ） 改进MOSFETs镍基硅化物热稳定性的方法, 发明, 2015, 第 1 作者, 专利号: 201110074395.6
（ 6 ） 半导体器件及其制造方法, 发明, 2015, 第 1 作者, 专利号: 201110104362.1
（ 7 ） 具有高击穿电压的HEMT及其制造方法, 发明, 2015, 第 2 作者, 专利号: 201110116103.0
（ 8 ） Sensing apparatus, 发明, 2018, 第 2 作者, 专利号: US Patent App. 15/501,805
（ 9 ） Particle screening device, 发明, 2017, 第 2 作者, 专利号: US Patent App. 15/326,425
（ 10 ） Cell location unit, array, device and formation method thereof, 发明, 2017, 第 2 作者, 专利号: US Patent App. 15/320,533

   

[1] Tengzhi Yang, Meiyin Yang, Jun Luo. Field-Free Deterministic Writing of Spin-Orbit Torque Magnetic Tunneling Junction by Unipolar Current. Ieee Electron Device Letters[J]. 2022, 43(5): 709-, [2] Yanru Li, 杨美音, Jun Luo. Temperature response of non-hysteresis magnetic switching by electrical current. Journal of Materials Science: Materials in Electronics[J]. 2022, 33: 6681-6688, [3] yanru Li, Meiyin Yang, Guoqiang Yu, Baoshan Cui, Jun Luo. Current controlled non-hysteresis magnetic switching in the absence of magnetic field. Applied Physics Letters[J]. 2022, 120: 062402-, [4] Cao, Wei, Gao, Jianfeng, Yang, Meiyin, Xu, Jing, Cui, Yan, Luo, Jun. The heavy ions irradiation effects on advanced spin transfer torque materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS[J]. 2022, 542: http://dx.doi.org/10.1016/j.jmmm.2021.168579.
[5] Zhang, Qingzhu, Gu, Jie, Xu, Renren, Cao, Lei, Li, Junjie, Wu, Zhenhua, Wang, Guilei, Yao, Jiaxin, Zhang, Zhaohao, Xiang, Jinjuan, He, Xiaobin, Kong, Zhenzhen, Yang, Hong, Tian, Jiajia, Xu, Gaobo, Mao, Shujuan, Radamson, Henry H, Yin, Huaxiang, Luo, Jun. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. NANOMATERIALS[J]. 2021, 11(3): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998492/.
[6] Liu, Haoyan, Li, Yongliang, Cheng, Xiaohong, Zan, Ying, Lu, Yihong, Wang, Guilei, Li, Junjie, Kong, Zhenzhen, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Luo, Jun, Wang, Wenwu. Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 121: http://dx.doi.org/10.1016/j.mssp.2020.105397.
[7] Zhang, Dan, Fu, Chaochao, Xu, Jing, Zhao, Chao, Gao, Jianfeng, Liu, Yaodong, Li, Menghua, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Wu, Dongping, Luo, Jun. NiSi/p(+)-Si(n(+)-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(6): 2886-2891, http://dx.doi.org/10.1109/TED.2021.3075199.
[8] Yang, Meiyin, Li, Yanru, Luo, Jun, Deng, Yongcheng, Zhang, Nan, Zhang, Xueying, Li, Shaoxin, Cui, Yan, Yu, Peiyue, Yang, Tengzhi, Sheng, Yu, Wang, Sumei, Xu, Jing, Zhao, Chao, Wang, Kaiyou. All-Linear Multistate Magnetic Switching Induced by Electrical Current. PHYSICAL REVIEW APPLIED[J]. 2021, 15(5): http://dx.doi.org/10.1103/PhysRevApplied.15.054013.
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[13] Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Yao, Jiaxin, Zhang, Zhaohao, Zhu, Xiaohui, Wang, Guilei, Li, Junjie, Zhang, Yongkui, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Xu, Qiuxia, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. NANOMATERIALS[J]. 2021, 11(2): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911106/.
[14] Longda Zhou, Qianqian Liu, Hong Yang, Zhigang Ji, Hao Xu, Guilei Wang, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang. Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2021, 9: 229-235, https://doaj.org/article/c5b752e8b8c341c8ae304cdcd783f0ac.
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[16] Zhang, Dan, Du, Anyan, Zhao, Chao, Gao, Jianfeng, Mao, Shujuan, Xu, Jing, Gu, Shihai, Liu, Yaodong, Luo, Xue, Li, Yongliang, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. Investigation of Barrier Property of Amorphous Co-Ti Layer as Single Barrier/Liner in Local Co Interconnects. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(5): 2076-2081, http://dx.doi.org/10.1109/TED.2020.2983302.
[17] Zhou, Longda, Liu, Qianqian, Yang, Hong, Ji, Zhigang, Xu, Hao, Tang, Bo, Simoen, Eddy, Jiang, Haojie, Luo, Ying, Wang, Xiaolei, Ma, Xueli, Li, Yongliang, Luo, Jun, Yin, Huaxiang, Zhao, Chao, Wang, Wenwu. Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY[J]. 2020, 20(3): 498-505, http://dx.doi.org/10.1109/TDMR.2020.2997811.
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（1） Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs, World Scientific Publishing Company, 2017-06, 第 2 作者
（2） CMOS: Past, Present and Future, Woodhead Publishing, 2018-04, 第 2 作者

   

（ 1 ） 高k金属栅与全硅化物Fin源漏, 参与, 国家级, 2015-01--2018-12
（ 2 ） 场发射枪扫描电子显微镜, 参与, 国家级, 2013-09--2018-09
（ 3 ） 基于微纳电子技术, 参与, 部委级, 2015-08--2019-09
（ 4 ） 先导集成电路器件及电路, 参与, 部委级, 2012-12--2016-12
（ 5 ） 青年创新促进会, 主持, 部委级, 2011-01--2020-12
（ 6 ） 体硅FinFET 与关键工艺研究, 参与, 国家级, 2013-01--2016-12
（ 7 ） 新型低温MRAM器件研究, 主持, 部委级, 2018-01--2023-01
（ 8 ） 自旋逻辑器件结构设计、磁隧道结制备及性能优化, 主持, 研究所（学校）, 2018-01--2018-12

已指导学生

张韫韬  硕士研究生  085209-集成电路工程  

王文  硕士研究生  085209-集成电路工程  

田阳雨  硕士研究生  085209-集成电路工程  

盛捷  硕士研究生  085208-电子与通信工程  

侯西亮  硕士研究生  080903-微电子学与固体电子学  

现指导学生

杨腾智  硕士研究生  080903-微电子学与固体电子学  

张国栋  硕士研究生  085208-电子与通信工程  

孙祥烈  硕士研究生  085208-电子与通信工程  

马浩东  硕士研究生  085208-电子与通信工程  

何国伟  硕士研究生  085208-电子与通信工程  

曹纬  硕士研究生  080903-微电子学与固体电子学  

李彦如  博士研究生  080903-微电子学与固体电子学  

李梦华  硕士研究生  085209-集成电路工程