基本信息
罗军  男  硕导  中国科学院微电子研究所
电子邮件: luojun@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号中科院微电子所十室
邮政编码: 100029

研究领域

集成电路先导工艺技术
CMOS器件与工艺;半导体器件与工艺

招生信息

材料、化学以及电子工程相关专业学生

招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
集成电路先导工艺技术
CMOS器件与工艺;半导体器件与工艺

教育背景

2006-09--2010-06   瑞典皇家工学院(KTH)   工学博士
2005-09--2006-09   复旦大学   博士在读
2002-09--2005-07   厦门大学   工学硕士
1998-09--2002-07   中国地质大学(武汉)   工学学士
学历
研究生

学位

工学博士

工作经历

   
工作简历
2017-05~现在, 中国科学院微电子研究所, 研究员
2010-08~2017-04,中科院微电子所, 助理研究员/副研究员
社会兼职
2016-06-29-2019-04-28,Journal of Materials Science: Materials in Electronics, 副主编

教授课程

半导体工艺与制造技术
先进半导体器件物理与工艺技术
Si基CMOS和光子学的新兴技术
高等计算电磁学
半导体制造技术
集成电路制造工艺与设备

专利与奖励

   
奖励信息
(1) 中国科学院“朱李月华优秀教师奖”, 院级, 2017
(2) 中国专利优秀奖, 部委级, 2017
专利成果
( 1 ) Semiconductor device and manufacturing method thereof, 发明, 2015, 第 1 作者, 专利号: 9,012,965
( 2 ) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, 发明, 2015, 第 1 作者, 专利号: 8,987,127
( 3 ) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, 发明, 2015, 第 1 作者, 专利号: 8,946,071
( 4 ) SEMICONDUCTOR DEVICE STRUCTURE, METHOD FOR MANUFACTURING THE SAME, And method for manufacturing fin, 发明, 2015, 第 3 作者, 专利号: 9,070,719
( 5 ) 改进MOSFETs镍基硅化物热稳定性的方法, 发明, 2015, 第 1 作者, 专利号: 201110074395.6
( 6 ) 半导体器件及其制造方法, 发明, 2015, 第 1 作者, 专利号: 201110104362.1
( 7 ) 具有高击穿电压的HEMT及其制造方法, 发明, 2015, 第 2 作者, 专利号: 201110116103.0
( 8 ) Sensing apparatus, 发明, 2018, 第 2 作者, 专利号: US Patent App. 15/501,805
( 9 ) Particle screening device, 发明, 2017, 第 2 作者, 专利号: US Patent App. 15/326,425
( 10 ) Cell location unit, array, device and formation method thereof, 发明, 2017, 第 2 作者, 专利号: US Patent App. 15/320,533

出版信息

   
发表论文
[1] Tengzhi Yang, Meiyin Yang, Jun Luo. Field-Free Deterministic Writing of Spin-Orbit Torque Magnetic Tunneling Junction by Unipolar Current. Ieee Electron Device Letters[J]. 2022, 43(5): 709-, [2] Yanru Li, 杨美音, Jun Luo. Temperature response of non-hysteresis magnetic switching by electrical current. Journal of Materials Science: Materials in Electronics[J]. 2022, 33: 6681-6688, [3] yanru Li, Meiyin Yang, Guoqiang Yu, Baoshan Cui, Jun Luo. Current controlled non-hysteresis magnetic switching in the absence of magnetic field. Applied Physics Letters[J]. 2022, 120: 062402-, [4] Cao, Wei, Gao, Jianfeng, Yang, Meiyin, Xu, Jing, Cui, Yan, Luo, Jun. The heavy ions irradiation effects on advanced spin transfer torque materials. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS[J]. 2022, 542: http://dx.doi.org/10.1016/j.jmmm.2021.168579.
[5] Zhang, Qingzhu, Gu, Jie, Xu, Renren, Cao, Lei, Li, Junjie, Wu, Zhenhua, Wang, Guilei, Yao, Jiaxin, Zhang, Zhaohao, Xiang, Jinjuan, He, Xiaobin, Kong, Zhenzhen, Yang, Hong, Tian, Jiajia, Xu, Gaobo, Mao, Shujuan, Radamson, Henry H, Yin, Huaxiang, Luo, Jun. Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. NANOMATERIALS[J]. 2021, 11(3): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7998492/.
[6] Liu, Haoyan, Li, Yongliang, Cheng, Xiaohong, Zan, Ying, Lu, Yihong, Wang, Guilei, Li, Junjie, Kong, Zhenzhen, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Luo, Jun, Wang, Wenwu. Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 121: http://dx.doi.org/10.1016/j.mssp.2020.105397.
[7] Zhang, Dan, Fu, Chaochao, Xu, Jing, Zhao, Chao, Gao, Jianfeng, Liu, Yaodong, Li, Menghua, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Wu, Dongping, Luo, Jun. NiSi/p(+)-Si(n(+)-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(6): 2886-2891, http://dx.doi.org/10.1109/TED.2021.3075199.
[8] Yang, Meiyin, Li, Yanru, Luo, Jun, Deng, Yongcheng, Zhang, Nan, Zhang, Xueying, Li, Shaoxin, Cui, Yan, Yu, Peiyue, Yang, Tengzhi, Sheng, Yu, Wang, Sumei, Xu, Jing, Zhao, Chao, Wang, Kaiyou. All-Linear Multistate Magnetic Switching Induced by Electrical Current. PHYSICAL REVIEW APPLIED[J]. 2021, 15(5): http://dx.doi.org/10.1103/PhysRevApplied.15.054013.
[9] Li, Shengyang, Zhang, Haoyue, She, Guangwei, Xu, Jing, Zhang, Shaoyang, Deng, Yuwang, Mu, Lixuan, Zhou, Qingli, Liu, Yun, Luo, Jun, Shi, Wensheng. NiSi2/p-Si Schottky Junction Photocathode with a High-Quality Epitaxial Interface for Efficient Hydrogen Evolution. ACS APPLIED ENERGY MATERIALS[J]. 2021, 4(10): 11574-11579, http://dx.doi.org/10.1021/acsaem.1c02318.
[10] Zhang, Dan, Zhao, Chao, Xu, Jing, Gao, Jianfeng, Liu, Jinbiao, Liu, Yaodong, Li, Menghua, Zhou, Xuebing, Sun, Xianglie, Li, Yongliang, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. A Novel Method to Reduce Specific Contact Resistivity of TiSix/n(+)-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(7): 958-961, [11] Mao, Shujuan, Zhao, Chao, Liu, Jinbiao, Wang, Guilei, Zhang, Yongkui, Wang, Yao, Cui, Hengwei, Liu, Weibing, Li, Menghua, Liu, Yaodong, Zhang, Dan, Xu, Jing, Gao, Jianfeng, Li, Yongliang, Wang, Wenwu, Chen, Dapeng, Li, Junfeng, Ye, Tianchun, Luo, Jun. Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 1835-1840, http://dx.doi.org/10.1109/TED.2021.3057337.
[12] Liu, Yaodong, Xu, Jing, Gao, Jianfeng, Liu, Jinbiao, Zhang, Dan, Zhou, Xuebing, Sun, Xianglie, Li, Yongliang, Li, Junfeng, Zhao, Chao, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2021, 32(19): 24107-24114, http://dx.doi.org/10.1007/s10854-021-06874-7.
[13] Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Yao, Jiaxin, Zhang, Zhaohao, Zhu, Xiaohui, Wang, Guilei, Li, Junjie, Zhang, Yongkui, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Xu, Qiuxia, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. NANOMATERIALS[J]. 2021, 11(2): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911106/.
[14] Longda Zhou, Qianqian Liu, Hong Yang, Zhigang Ji, Hao Xu, Guilei Wang, Eddy Simoen, Haojie Jiang, Ying Luo, Zhenzhen Kong, Guobin Bai, Jun Luo, Huaxiang Yin, Chao Zhao, Wenwu Wang. Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2021, 9: 229-235, https://doaj.org/article/c5b752e8b8c341c8ae304cdcd783f0ac.
[15] Li, Shengyang, She, Guangwei, Xu, Jing, Zhang, Shaoyang, Zhang, Haoyue, Mu, Lixuan, Ge, Chen, Jin, Kuijuan, Luo, Jun, Shi, Wensheng. Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes. ACS APPLIED MATERIALS & INTERFACES[J]. 2020, 12(35): 39092-39097, https://www.webofscience.com/wos/woscc/full-record/WOS:000569268800025.
[16] Zhang, Dan, Du, Anyan, Zhao, Chao, Gao, Jianfeng, Mao, Shujuan, Xu, Jing, Gu, Shihai, Liu, Yaodong, Luo, Xue, Li, Yongliang, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. Investigation of Barrier Property of Amorphous Co-Ti Layer as Single Barrier/Liner in Local Co Interconnects. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(5): 2076-2081, http://dx.doi.org/10.1109/TED.2020.2983302.
[17] Zhou, Longda, Liu, Qianqian, Yang, Hong, Ji, Zhigang, Xu, Hao, Tang, Bo, Simoen, Eddy, Jiang, Haojie, Luo, Ying, Wang, Xiaolei, Ma, Xueli, Li, Yongliang, Luo, Jun, Yin, Huaxiang, Zhao, Chao, Wang, Wenwu. Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY[J]. 2020, 20(3): 498-505, http://dx.doi.org/10.1109/TDMR.2020.2997811.
[18] Zhao, Xuewei, Moeen, M, Toprak, M S, Wang, Guilei, Luo, Jun, Ke, Xingxing, Li, Zhihua, Liu, Daoqun, Wang, Wenwu, Zhao, Chao, Radamson, Henry H. Design impact on the performance of Ge PIN photodetectors. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(1): 18-25, https://www.webofscience.com/wos/woscc/full-record/WOS:000518400500004.
[19] Luo Jun. Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness. ECS Journal of Solid State ence and Technology. 2020, [20] Wang, Xiaolei, Sun, Xiaoqing, Zhang, Yuanyuan, Zhou, Lixing, Xiang, Jinjuan, Ma, Xueli, Yang, Hong, Li, Yongliang, Han, Kai, Luo, Jun, Zhao, Chao, Wang, Wenwu. Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(10): 4500-4506, https://www.webofscience.com/wos/woscc/full-record/WOS:000572635400090.
[21] Mao, Shujuan, Zhao, Chao, Liu, Jinbiao, Wang, Guilei, Li, Ben, Liu, Weibing, Li, Menghua, Liu, Yaodong, Zhang, Dan, Xu, Jing, Gao, Jianfeng, Li, Yongliang, Wang, Wenwu, Chen, Dapeng, Li, Junfeng, Ye, Tianchun, Luo, Jun. Investigation of Ultrathin Ni Germanosilicide for Advanced pMOS Contact Metallization. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(11): 5039-5044, http://dx.doi.org/10.1109/TED.2020.3026986.
[22] Cheng, Xiaohong, Li, Yongliang, Wang, Guilei, Liu, Haoyan, Zan, Ying, Lin, Hongxiao, Kong, Zhenzhen, Zhong, Zhaoyang, Li, Yan, Wang, Hanxiang, Xu, Gaobo, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Luo, Jun, Wang, Wenwu. Investigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2020, 35(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000575362500001.
[23] Zhao, Zhiqian, Cheng, Xiaohong, Li, Yongliang, Zan, Ying, Liu, Haoyan, Wang, Guilei, Du, Anyan, Li, Junjie, Zhang, Qingzhu, Xu, Gaobo, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Xu, Jing, Luo, Jun, Li, JunFeng, Yin, Huaxiang, Wang, Wenwu. Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(8): 5854-5860, https://www.webofscience.com/wos/woscc/full-record/WOS:000499978000002.
[24] Zhou, Longda, Zhang, Qingzhu, Yang, Hong, Ji, Zhigang, Zhang, Zhaohao, Liu, Qianqian, Xu, Hao, Tang, Bo, Simoen, Eddy, Ma, Xueli, Wang, Xiaolei, Li, Yongliang, Yin, Huaxiang, Luo, Jun, Zhao, Chao, Wang, Wenwu. Understanding Frequency Dependence of Trap Generation Under AC Negative Bias Temperature Instability Stress in Si p-FinFETs. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(7): 965-968, https://www.webofscience.com/wos/woscc/full-record/WOS:000545436900001.
[25] Mao, Shujuan, Zhao, Chao, Liu, Jinbiao, Wang, Guilei, Li, Menghua, Liu, Yaodong, Luo, Xue, Zhan, Dan, Xu, Jing, Wang, Wenwu, Chen, Dapeng, Li, Junfeng, Ye, Tianchun, Luo, Jun. Specific Contact Resistivity Improvement by As Preamorphization Implantation for Ti-Based Ohmic Contacts on n(+)-Si. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(4): 1726-1729, http://dx.doi.org/10.1109/TED.2020.2975235.
[26] Zhang, Dan, Zhao, Chao, Luo, Jun, Mao, Shujuan, Wang, Guilei, Xu, Jing, Luo, Xue, Li, Junfeng, Li, Yongliang, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun. Experimental investigation of fundamental film properties for Co1-xTix alloying films with different compositions (0 <= x <= 1). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(1): 105-114, https://www.webofscience.com/wos/woscc/full-record/WOS:000518400500015.
[27] Zhang, Dan, Sheng, Jie, Zhao, Chao, Xu, Jing, Gao, Jianfeng, Mao, Shujuan, Men, Yang, Liu, Pengfei, Zhang, Jing, Luo, Xue, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. Effects of Ni Film Thickness on the Properties of Ni-Based Silicides Formed on Both Highly Doped n- and p-Si Substrate. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2020, 9(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000537394900001.
[28] Zhang, Dan, Xu, Jing, Gao, Jianfeng, Du, Anyan, Zhang, Jing, Mao, Shujuan, Men, Yang, Liu, Pengfei, Gu, Shihai, Luo, Xue, Liu, Yaodong, Wang, Guilei, Li, Junfeng, Zhao, Chao, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Luo, Jun. Impact of Ge pre-amorphization implantation on Co/Co-Ti/n(+)-Si contacts in advanced Co interconnects. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 59: https://www.webofscience.com/wos/woscc/full-record/WOS:000546609800007.
[29] Cheng, Xiaohong, Li, Yongliang, Liu, Haoyan, Zan, Ying, Lu, Yihong, Zhang, Qingzhu, Li, Junjie, Du, Anyan, Wu, Zhenhua, Luo, Jun, Wang, Wenwu. Selective wet etching in fabricating SiGe nanowires with TMAH solution for gate-all-around MOSFETs. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(24): 22478-22486, https://www.webofscience.com/wos/woscc/full-record/WOS:000585906600004.
[30] Li, Junjie, Li, Yongliang, Zhou, Na, Xiong, Wenjuan, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Cao, Zhe, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Luo, Jun, Wang, Wenwu, Radamson, Henry H. Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors. NANOMATERIALS[J]. 2020, 10(4): http://dx.doi.org/10.3390/nano10040793.
[31] Wang, Yan, Ma, Yuanjun, Shi, Jinping, Yan, Xiangyu, Luo, Jun, Zhu, Huilong, Jia, Kunpeng, Li, Juan, Zhang, Can Yang. Surface Modification of Monolayer MoS(2)by Baking for Biomedical Applications. FRONTIERS IN CHEMISTRY[J]. 2020, 8: https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7573127/.
[32] Ngan Hoang Pham, Vallin, Orjan, Panda, J, Kamalakar, M Venkata, Guo, Junji, Luo, Jun, Wen, Chenyu, Zhang, ShiLi, Zhang, ZhiBin. High thermoelectric power factor of p-type amorphous silicon thin films dispersed with ultrafine silicon nanocrystals. JOURNAL OF APPLIED PHYSICS[J]. 2020, 127(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000545781200001.
[33] Sun, Xianglie, Lv, Shuliang, Li, Yuan, Huang, Chi, Ma, Haodong, Luo, Jun. Influence of TaN films deposited using different N-2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2020, 115: http://dx.doi.org/10.1016/j.mssp.2020.105120.
[34] Zhao, Zhiqian, Li, Yan, Zan, Ying, Li, Yongliang, Li, Junjie, Cheng, Xiaohong, Wang, Guilei, Liu, Haoyan, Wang, Hanxiang, Zhang, Qingzhu, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Li, JunFeng, Luo, Jun, Yin, Huaxiang, Wang, Wenwu. Fabrication technique of the Si0.5Ge0.5 Fin for the high mobility channel FinFET device. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2020, 35(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000520431400001.
[35] Shahzad, Kashif, Jia, Kunpeng, Zhao, Chao, Yan, Xiangyu, Yadong, Zhang, Usman, Muhammad, Luo, Jun. An Improved Rosin Transfer Process for the Reduction of Residue Particles for Graphene. NANOSCALE RESEARCH LETTERS[J]. 2020, 15(1): http://dx.doi.org/10.1186/s11671-020-03312-1.
[36] Hong, Peizhen, Zhao, Zhiguo, Luo, Jun, Xia, Zhiliang, Su, Xiaojing, Zhang, Libin, Li, Chunlong, Huo, Zongliang. An Improved Dimensional Measurement Method of Staircase Patterns With Higher Precision in 3D NAND. IEEE ACCESS[J]. 2020, 8: 140054-140061, https://doaj.org/article/e9da23ff1a4543e3bc9c99f11603f5dc.
[37] Wang, Guilei, Kolahdouz, M, Luo, Jun, Qin, Changliang, Gu, Shihai, Kong, Zhenzhen, Yin, Xiaogen, Xiong, Wenjuan, Zhao, Xuewei, Liu, Jinbiao, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Radamson, Henry H. Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS). JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2020, 31(1): 26-33, https://www.webofscience.com/wos/woscc/full-record/WOS:000518400500005.
[38] Luo, Xue, Wang, Guilei, Xu, Jing, Mao, Shujuan, Zhang, Dan, Liu, Shi, Li, Junfeng, Li, Yongliang, Wang, Wenwu, Chen, Dapeng, Zhao, Chao, Ye, Tianchun, Luo, Jun. Investigation of NiGe Films Formed on Both n(+)- and p(+)-Ge with P and B Ion Implantation before Germanidation. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2019, 8(4): P271-P276, https://www.webofscience.com/wos/woscc/full-record/WOS:000467199300002.
[39] Zhao, Zhiqian, Li, Yongliang, Wang, Guilei, Du, Anyan, Gu, Shihai, Li, Yan, Zhang, Qingzhu, Xu, Gaobo, Ma, Xueli, Wang, Xiaolei, Yang, Hong, Luo, Jun, Li, JunFeng, Yin, Huaxiang, Wang, Wenwu. A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2019, 30(15): 14130-14135, https://www.webofscience.com/wos/woscc/full-record/WOS:000478863500030.
[40] Luo Jun. Experimental investigation of fundamental film properties for Co1−xTix alloying films with different compositions (0 ≤ x≤1). Journal of Materials Science: Materials in Electronics. 2019, [41] Sun, Xianglie, Lv, Shuliang, Li, Yuan, Luo, Jun, Huang, Chi, Wan, Xianjin. Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2019, 8(12): P764-P767, https://www.webofscience.com/wos/woscc/full-record/WOS:000500511600001.
[42] 盛捷, 罗军, 吕亮, 赵志远, 肖志强. Ni基硅化物受退火方式影响的研究. 微电子学. 2019, 270-274, http://lib.cqvip.com/Qikan/Article/Detail?id=77737873504849574850485051.
[43] 田阳雨, 罗军, 金鹰, 吴元芳. 基于电荷泵技术的三维器件的界面电荷特性研究. 半导体技术. 2019, 542-547, http://lib.cqvip.com/Qikan/Article/Detail?id=66688474504849574855484948.
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发表著作
(1) Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs, World Scientific Publishing Company, 2017-06, 第 2 作者
(2) CMOS: Past, Present and Future, Woodhead Publishing, 2018-04, 第 2 作者

科研活动

   
科研项目
( 1 ) 高k金属栅与全硅化物Fin源漏, 参与, 国家级, 2015-01--2018-12
( 2 ) 场发射枪扫描电子显微镜, 参与, 国家级, 2013-09--2018-09
( 3 ) 基于微纳电子技术, 参与, 部委级, 2015-08--2019-09
( 4 ) 先导集成电路器件及电路, 参与, 部委级, 2012-12--2016-12
( 5 ) 青年创新促进会, 主持, 部委级, 2011-01--2020-12
( 6 ) 体硅FinFET 与关键工艺研究, 参与, 国家级, 2013-01--2016-12
( 7 ) 新型低温MRAM器件研究, 主持, 部委级, 2018-01--2023-01
( 8 ) 自旋逻辑器件结构设计、磁隧道结制备及性能优化, 主持, 研究所(学校), 2018-01--2018-12

指导学生

已指导学生

张韫韬  硕士研究生  085209-集成电路工程  

王文  硕士研究生  085209-集成电路工程  

田阳雨  硕士研究生  085209-集成电路工程  

盛捷  硕士研究生  085208-电子与通信工程  

侯西亮  硕士研究生  080903-微电子学与固体电子学  

现指导学生

杨腾智  硕士研究生  080903-微电子学与固体电子学  

张国栋  硕士研究生  085208-电子与通信工程  

孙祥烈  硕士研究生  085208-电子与通信工程  

马浩东  硕士研究生  085208-电子与通信工程  

何国伟  硕士研究生  085208-电子与通信工程  

曹纬  硕士研究生  080903-微电子学与固体电子学  

李彦如  博士研究生  080903-微电子学与固体电子学  

李梦华  硕士研究生  085209-集成电路工程