General

Zhu Jiaqi: Hangzhou Institute for Advanced Study
E-mail: jiaqizhu@ucas.ac.cn
Address: No.1 Xiangshan Branch Road, Hangzhou, Zhejiang Province
Postal Code: 310024
Research Areas
Infrared semiconductor detection materials and devices, computational spectroscopy, etc
Education
2016-09--2021-06 Zhejiang University Doctor
2012-09--2016-06 Zhejiang University Undergraduate
2012-09--2016-06 Zhejiang University Undergraduate
Experience
Work Experience
2023-07~ present, Assistant Researcher, Hangzhou Institute for Advanced Study
2021-07~2023-07, Postdoctor, Hangzhou Institute for Advanced Study
2021-07~2023-07, Postdoctor, Hangzhou Institute for Advanced Study
Publications
Papers
(1) General-purpose mid-infrared micro-spectrometer based on hierarchical residual CNN and data augmentation, Optics Express, 2023, first author
(2) Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy, Journal of Materials Science, 2023, corresponding author
(3) High-sensitivity computational miniaturized terahertz spectrometer using a plasmonic filter array and a modified multilayer residual CNN, Nanophotonics, 2023, corresponding author
(4) Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors, Applied Physics Letters, 2021, first author
(5) Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity, Photonics Research, 2021, first author
(6) 硅基阻挡杂质带红外探测材料与器件研究进展, 中国科学: 物理学力学天文学, 2021, first author
(7) Lateral photovoltaic mid-infrared detector with a two-dimensional electron gas at the heterojunction interface, Optica, 2020, first author
(8) Impact of the Structural Parameters on the Photoresponse of Terahertz Blocked-Impurity-Band Detectors With Planar Structure, IEEE Transactions on Terahertz Science and Technology, 2020, first author
(9) Ultrahigh-Speed Mid-Infrared Photodetectors With 2-D Electron Gas in a CdTe/PbTe Heterojunction, IEEE Transactions on Electron Devices, 2020, first author
(2) Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy, Journal of Materials Science, 2023, corresponding author
(3) High-sensitivity computational miniaturized terahertz spectrometer using a plasmonic filter array and a modified multilayer residual CNN, Nanophotonics, 2023, corresponding author
(4) Temperature-sensitive mechanism for silicon blocked-impurity-band photodetectors, Applied Physics Letters, 2021, first author
(5) Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity, Photonics Research, 2021, first author
(6) 硅基阻挡杂质带红外探测材料与器件研究进展, 中国科学: 物理学力学天文学, 2021, first author
(7) Lateral photovoltaic mid-infrared detector with a two-dimensional electron gas at the heterojunction interface, Optica, 2020, first author
(8) Impact of the Structural Parameters on the Photoresponse of Terahertz Blocked-Impurity-Band Detectors With Planar Structure, IEEE Transactions on Terahertz Science and Technology, 2020, first author
(9) Ultrahigh-Speed Mid-Infrared Photodetectors With 2-D Electron Gas in a CdTe/PbTe Heterojunction, IEEE Transactions on Electron Devices, 2020, first author
Patents
( 1 ) 一种双载流子MoS2二维材料的制备方法, 发明专利, 2023, 第 2 作者, 专利号: ZL202210311623.5
( 2 ) 一种基于异质结二维电子气的新型光电位 置敏感探测器及其制备方法, 发明专利, 2022, 第 1 作者, 专利号: CN202210086892.6
( 3 ) 阻挡杂质带探测器及其制备方法、探测系统, 发明专利, 2023, 第 2 作者, 专利号: CN202310064073.6
( 4 ) 一种基于深度学习重构算法的太赫兹计算 光谱仪的制备方法, 发明专利, 2023, 第 3 作者, 专利号: CN202310288927.9
( 5 ) 一种基于二维层状铜基硫族化合物的忆阻器及其制备方 法, 发明专利, 2022, 第 2 作者, 专利号: CN202210311731.2
( 6 ) 一种基于微异质结核壳胶体量子点的可见-红外探测器及其制备方法和应用, 发明专利, 2024, 第 2 作者, 专利号: CN202410454899.8
( 2 ) 一种基于异质结二维电子气的新型光电位 置敏感探测器及其制备方法, 发明专利, 2022, 第 1 作者, 专利号: CN202210086892.6
( 3 ) 阻挡杂质带探测器及其制备方法、探测系统, 发明专利, 2023, 第 2 作者, 专利号: CN202310064073.6
( 4 ) 一种基于深度学习重构算法的太赫兹计算 光谱仪的制备方法, 发明专利, 2023, 第 3 作者, 专利号: CN202310288927.9
( 5 ) 一种基于二维层状铜基硫族化合物的忆阻器及其制备方 法, 发明专利, 2022, 第 2 作者, 专利号: CN202210311731.2
( 6 ) 一种基于微异质结核壳胶体量子点的可见-红外探测器及其制备方法和应用, 发明专利, 2024, 第 2 作者, 专利号: CN202410454899.8
Research Interests
Infrared materials and photodetectors, infrared micro-spectrometer, etc.
Conferences
(1)Ge-based blocked-impurity-band detectors with multi-band responses 10th Applied Optics and Photonics China 2021-07-23
(2)PbTe/CdTe异质结内2DEG的发现与应用 第二十二届全国半导体物理学术会议 2019-07-09
(2)PbTe/CdTe异质结内2DEG的发现与应用 第二十二届全国半导体物理学术会议 2019-07-09