基本信息
姜丽娟 女 中国科学院半导体研究所
电子邮件： ljjiang@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号半导体研究所
邮政编码：
电子邮件： ljjiang@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号半导体研究所
邮政编码：
研究领域
宽禁带半导体材料与器件
氮化镓材料与器件
招生信息
招生专业
0805Z2-半导体材料与器件
招生方向
宽禁带半导体材料与器件；微波功率器件；电力电子器件
教育背景
2004-09--2009-07 中国科学院半导体研究所 博士学位
1999-09--2003-07 西安交通大学 本科
1999-09--2003-07 西安交通大学 本科
学历
博士研究生
学位
工学博士
工作经历
工作简历
2018-01~2024-02,中国科学院半导体研究所, 副研究员
2009-09~2018-01,中国科学院半导体研究所, 助理研究员
2009-09~2018-01,中国科学院半导体研究所, 助理研究员
社会兼职
2006-09-30-2023-07-31,中国电子学会半导体与集成技术分会, 秘书
专利与奖励
奖励信息
（1） 中国电子学会先进工作者, 其他, 2013
（2） 高性能GaN外延材料, 二等奖, 省级, 2012
（2） 高性能GaN外延材料, 二等奖, 省级, 2012
出版信息
发表论文
[1] Zhen, Zixin, Xiao, Hongling, Jiang, Lijuan, Xu, Jiankai, Wang, Qian, Wang, Xiaoliang, Feng, Chun. Effect of Double Insulators on the Performance Improvement of 3 MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2023, 第 3 作者12(3): http://dx.doi.org/10.1149/2162-8777/acbf73.
[2] Qin, Yanbin, Wang, Quan, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Xu, Xiangang, Wang, Xiaoliang. TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2022, 第 5 作者61(8): http://dx.doi.org/10.35848/1347-4065/ac5811.
[3] Wang, Boyi, Feng, Chun, Jiang, Lijuan, Xiao, Hongling, Li, Wei, Wang, Xiaoliang. Optimization of Finite-Zone Implanted Edge Termination for beta-Ga2O3 SBD. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2022, 第 3 作者11(5): http://dx.doi.org/10.1149/2162-8777/ac7000.
[4] Zhen, Zixin, Wang, Quan, Qin, Yanbin, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Xiao, Hongling, Wang, Qian, Wang, Xiaoliang, Tan, Manqing, Feng, Chun. Comparative Study on Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2022, 第 6 作者219(10): http://dx.doi.org/10.1002/pssa.202200010.
[5] Niu, Di, Wang, Quan, Li, Wei, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. MICROMACHINES[J]. 2021, 第 6 作者12(2): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911281/.
[6] Shi, Daixing, Jiang, Lijuan, Wang, Quan, Feng, Chun, Xiao, Hongling, Li, Wei, Wang, Xiaoliang. A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches. OPTICS COMMUNICATIONS[J]. 2021, 第 2 作者 通讯作者 497(null): http://dx.doi.org/10.1016/j.optcom.2021.127133.
[7] Zhipeng Li, Quan Wang, Chun Feng, Qian Wang, Di Niu, Lijuan Jiang, Wei Li, Hongling Xiao, Xiaoliang Wang. Simulation Study of Performance Degradation in β-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling. Journal of Solid State Science and Technology[J]. 2021, 第 6 作者
[8] Chu, Jiayan, Wang, Quan, Feng, Chun, Jiang, Lijuan, Li, Wei, Liu, Hongxin, Wang, Qian, Xiao, Hongling, Wang, Xiaoliang. Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2021, 第 4 作者60(3): http://dx.doi.org/10.35848/1347-4065/abe341.
[9] Jia, Yeting, Wang, Quan, Chen, Changxi, Feng, Chun, Li, Wei, Jiang, Lijuan, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang. Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2021, 第 6 作者218(18): http://dx.doi.org/10.1002/pssa.202100151.
[10] Cheng, Peisen, Wang, Quan, Li, Wei, Jia, Yeting, Liu, Zhichao, Feng, Chun, Jiang, Lijuan, Xiao, Hongling, Wang, Xiaoliang. A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications. ELECTRONICS[J]. 2021, 第 7 作者10(3): https://doaj.org/article/f94d7c284ad34b50a2720159ed971f22.
[11] Li, Zhipeng, Wang, Quan, Feng, Chun, Wang, Qian, Niu, Di, Jiang, Lijuan, Li, Wei, Xiao, Hongling, Wang, Xiaoliang. Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2021, 第 6 作者10(5): http://dx.doi.org/10.1149/2162-8777/abed98.
[12] Chu, Jiayan, Wang, Quan, Jiang, Lijuan, Feng, Chun, Li, Wei, Liu, Hongxin, Xiao, Hongling, Wang, Xiaoliang. Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate. JOURNAL OF ELECTRONIC MATERIALS[J]. 2021, 第 3 作者50(5): 2630-2636, http://dx.doi.org/10.1007/s11664-021-08778-y.
[13] Hu, Haoyue, Xiao, Hongling, Guo, Fen, Wang, Quan, Feng, Chun, Jiang, Lijuan, Wang, Qian, Liu, Hongxin, Wang, Xiaoliang. Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2021, 第 6 作者218(12): http://dx.doi.org/10.1002/pssa.202000827.
[14] Xu, JianKai, Jiang, LiJuan, Wang, Qian, Wang, Quan, Xiao, HongLing, Feng, Chun, Li, Wei, Wang, XiaoLiang. Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*. CHINESE PHYSICS B[J]. 2021, 第 2 作者 通讯作者 30(11): 118101, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=7113071&detailType=1.
[15] Niu, Di, Wang, Quan, Li, Wei, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang. Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 6 作者59(11): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000578365800001.
[16] Ni, Weijiang, Wang, Xiaoliang, Xu, Miaoling, Li, Mingshan, Feng, Chun, Xiao, Hongling, Jiang, Lijuan, Li, Wei, Wang, Quan. Comparative Study of SiC Planar MOSFETs With Different p-Body Designs. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 第 7 作者67(3): 1071-1076, http://dx.doi.org/10.1109/TED.2020.2966775.
[17] Guo, Fen, Wang, Quan, Xiao, Hongling, Jiang, Lijuan, Li, Wei, Feng, Chun, Wang, Xiaoliang, Wang, Zhanguo. Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2020, 第 4 作者35(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000560442700001.
[18] Weijiang Ni, Xiaoliang Wang, Miaolin Xu, Quan Wang, Chun Feng, Honglin Xiao, Lijuan Jiang, Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 第 7 作者40(5): 698-701, http://dx.doi.org/10.1109/LED.2019.2908253.
[19] Mei, Shuzhe, Wang, Quan, Xu, Jiankai, Yin, Haibo, Xiao, Hongling, Feng, Chun, Jiang, Lijuan, Wang, Xiaoliang, Liu, Fengqi, Xu, Xiangang, Wang, Zhanguo. Simulation and Optimization of Temperature Distribution in Induction Heating Reactor. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 7 作者18(11): 7440-7445, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600018.
[20] Mei, Shuzhe, Wang, Quan, Hao, Meilan, Xu, Jiankai, Yin, Haibo, Xiao, Hongling, Feng, Chun, Jiang, Lijuan, Wang, Xiaoliang, Liu, Fengqi, Xu, Xiangang, Wang, Zhanguo. Theoretical analysis of induction heating in high-temperature epitaxial growth system. AIP ADVANCES[J]. 2018, 第 8 作者8(8): https://doaj.org/article/2543e2236e50401596e52e8ac43a1f6e.
[21] ShuZheMei, QuanWang, MeiLanHao, JianKaiXu, HongLingXiao, ChunFeng, LiJuanJiang, XiaoLiangWang, FengQiLiu, XianGangXu, ZhanGuoWang. Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling. Chinese Physics Letters[J]. 2018, 第 7 作者35(9): 98101, https://cpl.iphy.ac.cn/10.1088/0256-307X/35/9/098101.
[22] Hao, Meilan, Wang, Quan, Jiang, Lijuan, Feng, Chun, Chen, Changxi, Wang, Cuimei, Xiao, Hongling, Liu, Fengqi, Xu, Xiangang, Wang, Xiaoliang, Wang, Zhanguo. Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 3 作者18(11): 7479-7483, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600025.
[23] Wang, Quan, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Liu, Fengqi, Xu, Xiangang, Wang, Zhanguo. X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 5 作者18(11): 7451-7454, http://dx.doi.org/10.1166/jnn.2018.16075.
[24] Wei, LinCheng, Wang, Quan, Feng, Chun, Xiao, HongLing, Jiang, LiJuan, Wang, CuiMei, Li, Wei, Wang, XiaoLiang, Liu, FengQi, Xu, XianGang, Wang, ZhanGuo. Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY[J]. 2018, 第 5 作者18(11): 7400-7404, https://www.webofscience.com/wos/woscc/full-record/WOS:000443946600012.
[25] Hao, Meilan, Wang, Quan, Jiang, Lijuan, Feng, Chun, Chen, Changxi, Wang, Cuimei, Xiao, Hongling, Liu, Fengqi, Xu, Xiangang, Wang, Xiaoliang, Wang, Zhanguo. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer. NANOSCIENCE AND NANOTECHNOLOGY LETTERS[J]. 2018, 第 3 作者10(2): 185-189, https://www.webofscience.com/wos/woscc/full-record/WOS:000430470000004.
[26] 梅书哲, 王权, 郝美兰, 徐健凯, 肖红领, 冯春, 姜丽娟, 王晓亮, 刘峰奇, 徐现刚, 王占国. Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling. 中国物理快报：英文版[J]. 2018, 第 7 作者35(9): 82-86, http://lib.cqvip.com/Qikan/Article/Detail?id=676492880.
[27] 占香蜜, 郝美兰, 王权, 李巍, 肖红领, 冯春, 姜丽娟, 王翠梅, 王晓亮, 王占国. Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors. 中国物理快报：英文版[J]. 2017, 第 7 作者34(4): 75-78, http://lib.cqvip.com/Qikan/Article/Detail?id=671959095.
[28] XiangMiZhan, QuanWang, KunWang, WeiLi, HongLingXiao, ChunFeng, LiJuanJiang, CuiMeiWang, XiaoLiangWang, ZhanGuoWang. Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor. Chinese Physics Letters[J]. 2017, 第 7 作者34(9): 97302, https://cpl.iphy.ac.cn/10.1088/0256-307X/34/9/097302.
[29] XiangMiZhan, MeiLanHao, QuanWang, WeiLi, HongLingXiao, ChunFeng, LiJuanJiang, CuiMeiWang, XiaoLiangWang, ZhanGuoWang. Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors. Chinese Physics Letters[J]. 2017, 第 7 作者34(4): 47301-047301, https://cpl.iphy.ac.cn/10.1088/0256-307X/34/4/047301.
[30] 占香蜜, 王权, 王琨, 李巍, 肖红领, 冯春, 姜丽娟, 王翠梅, 王晓亮, 王占国. Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor. 中国物理快报：英文版[J]. 2017, 第 7 作者34(9): 87-90, http://lib.cqvip.com/Qikan/Article/Detail?id=673439331.
[31] Yan Jun-Da, Wang Quan, Wang Xiao-Liang, Xiao Hong-Ling, Jiang Li-Juan, Yin Hai-Bo, Feng Chun, Wang Cui-Mei, Qu Shen-Qi, Gong Jia-Min, Zhang Bo, Li Bai-Quan, Wang Zhan-Guo, Hou Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors. CHIN. PHYS. LETT.[J]. 2015, 第 5 作者32(12): 127301, http://ir.semi.ac.cn/handle/172111/26857.
[32] Yan JunDa, Wang Quan, Wang XiaoLiang, Xiao HongLing, Jiang LiJuan, Yin HaiBo, Feng Chun, Wang CuiMei, Qu ShenQi, Gong JiaMin, Zhang Bo, Li BaiQuan, Wang ZhanGuo, Hou Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors. CHINESE PHYSICS LETTERS[J]. 2015, 第 5 作者32(12): http://lib.cqvip.com/Qikan/Article/Detail?id=667858574.
[33] He Kang, Quan Wang, Hongling Xiao, Cuimei Wang, Lijuan Jiang, Chun Feng, Hong Chen, Haibo Yin, Shenqi Qu, Enchao Peng, Jiamin Gong, Xiaoliang Wang, Baiquan Li, Zhanguo Wang, Xun Hou. Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes. PHYS. STATUS SOLIDI A[J]. 2015, 第 5 作者212(5): 1158-1161, http://ir.semi.ac.cn/handle/172111/26858.
[34] Lei Cui, Quan Wang, XiaoLiang Wang, HongLing Xiao, CuiMei Wang, LiJuan Jiang, Chun Feng, HaiBo Yin, JiaMin Gong, BaiQuan Li, ZhanGuo Wang. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor. CHIN. PHYS. LETT.[J]. 2015, 第 6 作者32(5): 58501-58504, http://ir.semi.ac.cn/handle/172111/26856.
[35] CUILei, WANGQuan, WANGXiaoLiang, XIAOHongLing, WANGCuiMei, JIANGLiJuan, FENGChun, YINHaiBo, GONGJiaMin, LIBaiQuan, WANGZhanGuo. A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor. Chinese Physics Letters[J]. 2015, 第 6 作者32(5): 58501-058501, https://cpl.iphy.ac.cn/10.1088/0256-307X/32/5/058501.
[36] Cui Lei, Yin Haibo, Jiang Lijuan, Wang Quan, Feng Chun, Xiao Hongling, Wang Cuimei, Gong Jiamin, Zhang Bo, Li Baiquan, Wang Xiaoliang, Wang Zhanguo. The influence of Fe doping on the surface topography of GaN epitaxial material. JOURNAL OF SEMICONDUCTORS[J]. 2015, 第 3 作者36(10): 103002-1,
[37] Kang, He, Wang, Quan, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Qu, Shenqi, Peng, Enchao, Gong, Jiamin, Wang, Xiaoliang, Li, Baiquan, Wang, Zhanguo, Hou, Xun. Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[J]. 2015, 第 5 作者212(5): 1158-1161, https://www.webofscience.com/wos/woscc/full-record/WOS:000354405000042.
[38] Yan Junda, Wang Quan, Wang Xiaoliang, Xiao Hongling, Jiang Lijuan, Yin Haibo, Feng Chun, Wang Cuimei, Qu Shenqi, Gong Jiamin, Zhang Bo, Li Baiquan, Wang Zhanguo, Hou Xun. Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/A1N/GaN Heterojunction Field Effect Transistors. CHINESE PHYSICS LETTERS[J]. 2015, 第 5 作者32(12): 127301-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5601891&detailType=1.
[39] Qu, Shenqi, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Peng, Enchao, Kang, He, Wang, Zhanguo, Hou, Xun. Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS[J]. 2014, 第 5 作者66(2): http://ir.semi.ac.cn/handle/172111/26312.
[40] KANGHe, WANGQuan, XIAOHongLing, WANGCuiMei, JIANGLiJuan, FENGChun, CHENHong, YINHaiBo, WANGXiaoLiang, WANGZhanGuo, HOUXun. High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes. Chinese Physics Letters[J]. 2014, 第 5 作者31(6): 68502-068502, https://cpl.iphy.ac.cn/10.1088/0256-307X/31/6/068502.
[41] Qu, Shenqi, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Yin, Haibo, Yan, Junda, Peng, Enchao, Kang, He, Wang, Zhanguo, Hou, Xun. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS[J]. 2014, 第 5 作者68(1): http://ir.semi.ac.cn/handle/172111/26123.
[42] Yan, Junda, Wang, Xiaoliang, Wang, Quan, Qu, Shenqi, Xiao, Hongling, Peng, Enchao, Kang, He, Wang, Cuimei, Feng, Chun, Yin, Haibo, Jiang, Lijuan, Li, Baiquan, Wang, Zhanguo, Hou, Xun. Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation. JOURNAL OF APPLIED PHYSICS[J]. 2014, 第 11 作者116(5): http://ir.semi.ac.cn/handle/172111/26241.
[43] Lin, Defeng, Wang, Xiaoliang, Xiao, Hongling, Kang, He, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Deng, Qingwen, Bi, Yang, Zhang, Jingwen, Hou, Xun. High performance AlGaN/GaN power switch with Si3N4 insulation. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS[J]. 2013, 第 6 作者61(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000314352800001.
[44] Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Qu, Shenqi, Kang, He, Hou, Xun, Wang, Zhanguo. Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of buffer acceptor and channel width. JOURNAL OF APPLIED PHYSICS[J]. 2013, 第 8 作者114(15): http://ir.semi.ac.cn/handle/172111/24542.
[45] Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo. Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers. JOURNAL OF CRYSTAL GROWTH[J]. 2013, 第 8 作者383: 25-29, http://dx.doi.org/10.1016/j.jcrysgro.2013.07.017.
[46] Wan Xiaojia, Wang Xiaoliang, Xiao Hongling, Feng Chun, Jiang Lijuan, Qu Shenqi, Wang Zhanguo, Hou Xun. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors. JOURNAL OF SEMICONDUCTORS[J]. 2013, 第 5 作者34(10): 104002, http://ir.semi.ac.cn/handle/172111/25001.
[47] Lin, Defeng, Wang, Xiaoliang, Xiao, Hongling, Kang, He, Wang, Cuimei, Jiang, Lijuan, Feng, Chun, Chen, Hong, Deng, Qingwen, Bi, Yang, Zhang, Jingwen, Hou, Xun. High performance AlGaNGaN power switch with Si3N4 Insulation. THE EUROPEAN PHYSICAL JOURNAL APPLIED PHYSICS[J]. 2013, 第 6 作者61(1): 10101, http://ir.semi.ac.cn/handle/172111/24512.
[48] Peng, Enchao, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan, Hou, Xun, Wang, Zhanguo. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2013, 第 8 作者576: 48-53, http://ir.semi.ac.cn/handle/172111/24540.
[49] Ding, Jieqin, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Feng, Chun, Jiang, Lijuan. Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2012, 第 8 作者523: 88-93, http://ir.semi.ac.cn/handle/172111/23553.
[50] Deng, Qingwen, Wang, Xiaoliang, Xiao, Hongling, Wang, Cuimei, Yin, Haibo, Chen, Hong, Lin, Defeng, Jiang, Lijuan, Feng, Chun, Li, Jinmin, Wang, Zhanguo, Hou, Xun. Comparison of as-grown and annealed GaN/InGaN:Mg samples. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2011, 第 8 作者44(34): http://ir.semi.ac.cn/handle/172111/22653.
[51] Jiang, L J, Wang, X L, Xiao, H L, Wang, Z G, Yang, C B, Zhang, M L. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 104(1): 429-432, http://ir.semi.ac.cn/handle/172111/21394.
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科研活动
科研项目
（ 1 ） GaN基光电导开关器件, 负责人, 其他, 2021-11--2025-11
（ 2 ） GaN基高增益模式光电导开关器件研究, 负责人, 国家任务, 2021-01--2024-02
（ 3 ） 大失配衬底上GaN 基异质结构中应力与缺陷调控及多物理场下的载流子输运性质, 参与, 国家任务, 2016-07--2020-12
（ 4 ） GaN基微纳等离子体波场效应晶体管, 负责人, 国家任务, 2013-01--2015-12
（ 5 ） InAlN/GaN异质结材料结构设计与生长机理研究, 负责人, 国家任务, 2012-01--2016-12
（ 6 ） 3-4英寸GaN基微电子材料专用MOCVD装备研制, 参与, 中国科学院计划, 2011-08--2014-08
（ 7 ） 09专项, 参与, 国家任务, 2009-01--2011-12
（ 2 ） GaN基高增益模式光电导开关器件研究, 负责人, 国家任务, 2021-01--2024-02
（ 3 ） 大失配衬底上GaN 基异质结构中应力与缺陷调控及多物理场下的载流子输运性质, 参与, 国家任务, 2016-07--2020-12
（ 4 ） GaN基微纳等离子体波场效应晶体管, 负责人, 国家任务, 2013-01--2015-12
（ 5 ） InAlN/GaN异质结材料结构设计与生长机理研究, 负责人, 国家任务, 2012-01--2016-12
（ 6 ） 3-4英寸GaN基微电子材料专用MOCVD装备研制, 参与, 中国科学院计划, 2011-08--2014-08
（ 7 ） 09专项, 参与, 国家任务, 2009-01--2011-12