基本信息
王艳  女    中国科学院微电子研究所
电子邮件: wangyan@ime.ac.cn
通信地址: 朝阳区北土城西路3号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
新型存储器件

教育背景

2006-09--2011-06   兰州大学&中科院微电子所   博士
2002-09--2006-06   兰州大学   学士

工作经历

   
工作简历
2016-01~现在, 中国科学院微电子研究所, 副研究员
2011-07~2015-12,中国科学院微电子研究所, 助理研究员

专利与奖励

   
奖励信息
(1) 氧化物阻变存储器机理与性能调控, 二等奖, 国家级, 2016
(2) 阻变存储器机理与性能调控, 一等奖, 其他, 2015
(3) 阻变存储器及集成的基础研究, 二等奖, 省级, 2014

出版信息

   
发表论文
[1] 刘继权, 黄飞, 秦俊, 王艳, 刘琦, 刘明, 邓龙江, 毕磊. 钇掺杂氧化铪薄膜的铁电与非线性光学性能研究. 湘潭大学学报:自然科学版. 2019, 41(5): 93-103, http://lib.cqvip.com/Qikan/Article/Detail?id=7100750046.
[2] 王艳. 钌电极提高HZO基铁电电容器寿命的研究. IEEE Electron device letters. 2019, [3] Cao, Rongrong, Song, Bing, Shang, D S, Yang, Yang, Luo, Qing, Wu, Shuyu, Li, Yue, Wang, Yan, Lv, Hangbing, Liu, Qi, Liu, Ming. Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(11): 1744-1747, [4] 王艳. 电极的覆盖效应对Hf0.5Zr0.5O2薄膜铁电特性的影响作用. IEEE ELECTRON DEVICE LETTERS. 2018, [5] Wang, Yan, Huang, Fei, Hu, Yuan, Cao, Rongrong, Shi, Tuo, Liu, Qi, Bi, Lei, Liu, Ming. Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(6): 823-826, https://www.webofscience.com/wos/woscc/full-record/WOS:000437086800010.
[6] Zhao, Xiaolong, Ma, Jun, Xiao, Xiangheng, Liu, Qi, Shao, Lin, Chen, Di, Liu, Sen, Niu, Jiebin, Zhang, Xumeng, Wang, Yan, Cao, Rongrong, Wang, Wei, Di, Zengfeng, Lv, Hangbing, Long, Shibing, Liu, Ming. Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects. ADVANCED MATERIALS[J]. 2018, 30(14): http://dx.doi.org/10.1002/adma.201705193.
[7] Cao, Rongrong, Wang, Yan, Zhao, Shengjie, Yang, Yang, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Lv, Hangbing, Liu, Qi, Liu, Ming. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(8): 1207-1210, https://www.webofscience.com/wos/woscc/full-record/WOS:000440006100023.
[8] 王艳. 基于钇掺杂的氧化铪铁电存储器件的质子辐照特性. Electron device letters. 2018, [9] 王艳. 基于氧化铪的高稳定抗辐照的铁电存储器. Electron Device Letters. 2017, [10] Huang, Fei, Wang, Yan, Liang, Xiao, Qin, Jun, Zhang, Yan, Yuan, Xiufang, Wang, Zhuo, Peng, Bo, Deng, Longjiang, Liu, Qi, Bi, Lei, Liu, Ming. HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(3): 330-333, https://www.webofscience.com/wos/woscc/full-record/WOS:000395878000011.
[11] Cao, Rongrong, Liu, Sen, Liu, Qi, Zhao, Xiaolong, Wang, Wei, Zhang, Xumeng, Wu, Facai, Wu, Quantan, Wang, Yan, Lv, Hangbing, Long, Shibing, Liu, Ming. Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM. IEEE ELECTRON DEVICE LETTERS[J]. 2017, 38(10): 1371-1374, https://www.webofscience.com/wos/woscc/full-record/WOS:000413760600004.
[12] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[13] Xi Kai, Bi Jinshun, Liu Ming, Liu Jie, Wang Yan, Hou Mingdong, Jiang YL, Tang TA, Huang R. SENSITIVITY OF PROTON SINGLE EVENT EFFECT SIMULATION TOOL TO VARIATION OF INPUT PARAMETERS. 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2016, 1197-1199, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000478951000339.
[14] Yang, Xiaonan, Zheng, Zhiwei, Wang, Yan, Huo, Zongliang, Jin, Lei, Jiang, Dandan, Wang, Zhongyong, Chiu, Shengfen, Wu, Hanming, Liu, Ming. Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2015, 36(1): 26-28, http://dx.doi.org/10.1109/LED.2014.2367104.
[15] Yang Xiaonan, Liu Jing, Zheng Zhiwei, Wang Yan, Jiang Dandan, Chiu Shengfen, Wu Hanming, Liu Ming, IEEE. Impact of P/E Cycling on Read Current Fluctuation of NOR Flash Memory Cell: A Microscopic Perspective Based on Low Frequency Noise Analysis. 2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)null. 2015, [16] Yang, Xiaonan, Liu, Jing, Zheng, Zhiwei, Wang, Yan, Jiang, Dandan, Wang, Zhongyong, Fan, Wenbing, Liu, Ming. Extraction of Position and Energy Level of Oxide Trap Generating Random Telegraph Noise in 65 nm NOR Flash Memory. INTEGRATED FERROELECTRICS[J]. 2015, 164(1): 103-111, https://www.webofscience.com/wos/woscc/full-record/WOS:000371295300014.
[17] Wang Yan, Liu Qi, Lu HangBing, Long ShiBing, Wang Wei, Li YingTao, Zhang Sen, Lian WenTai, Yang JianHong, Liu Ming. Improving the electrical performance of resistive switching memory using doping technology. CHINESE SCIENCE BULLETINnull. 2012, 57(11): 1235-1240, http://lib.cqvip.com/Qikan/Article/Detail?id=41288882.
[18] WANG Yan, LIU Oi, LU HangBing, LONG ShiBing, WANG Wei, LI YingTao, ZHANG Sen, LIAN WenTai, YANG JianHong, LIU Ming. Improving the electrical performance of resistive switching memory using doping technology. 中国科学通报:英文版. 2012, 57(11): 1235-1240, http://lib.cqvip.com/Qikan/Article/Detail?id=41288882.
[19] Li YingTao, Long ShiBing, Lue HangBing, Liu Qi, Wang Qin, Wang Yan, Zhang Sen, Lian WenTai, Liu Su, Liu Ming. Investigation of resistive switching behaviours in WO3-based RRAM devices. CHINESE PHYSICS B[J]. 2011, 20(1): 589-595, http://lib.cqvip.com/Qikan/Article/Detail?id=36349562.
[20] Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Yan, Zhang, Sen, Lian, Wentai, Wang, Ming, Zhang, Kangwei, Xie, Hongwei, Liu, Su, Liu, Ming. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. NANOTECHNOLOGY[J]. 2011, 22(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000290619900029.
[21] 王艳, 刘琦, 吕杭炳, 龙世兵, 张森, 李颖弢, 连文泰, 杨建红, 刘明. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films. CHINESE PHYSICS LETTERS[J]. 2011, 28(7): 262-264, https://www.webofscience.com/wos/woscc/full-record/WOS:000293141800070.
[22] 李颖弢, 龙世兵, 吕杭炳, 刘琦, 王琴, 王艳, 张森, 连文泰, 刘肃, 刘明. Investigation of resistive switching behaviours in WO3-based RRAM devices. 中国物理:英文版. 2011, 20(1): 589-595, http://lib.cqvip.com/Qikan/Article/Detail?id=36349562.
[23] Long, Shibing, Liu, Qi, Lv, Hangbing, Li, Yingtao, Wang, Yan, Zhang, Sen, Lian, Wentai, Zhang, Kangwei, Wang, Ming, Xie, Hongwei, Liu, Ming. Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 102(4): 915-919, https://www.webofscience.com/wos/woscc/full-record/WOS:000288253600018.
[24] Zhang KangWei, Long ShiBing, Liu Qi, Lue HangBing, Li YingTao, Wang Yan, Lian WenTai, Wang Ming, Zhang Sen, Liu Ming. Progress in rectifying-based RRAM passive crossbar array. SCIENCE CHINA-TECHNOLOGICAL SCIENCES[J]. 2011, 54(4): 811-818, http://lib.cqvip.com/Qikan/Article/Detail?id=37413951.
[25] Lian, Wentai, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Yan, Li, Yingtao, Zhang, Sen, Dai, Yuehua, Chen, Junning, Liu, Ming. Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(8): 1053-1055, http://dx.doi.org/10.1109/LED.2011.2157990.
[26] 张康玮, 龙世兵, 刘琦, 吕杭炳, 李颖弢, 王艳, 连文泰, 王明, 张森, 刘明. 基于整流特性的RRAM无源交叉阵列研究进展. 中国科学:技术科学[J]. 2011, 41(4): 403-411, http://lib.cqvip.com/Qikan/Article/Detail?id=37267580.
[27] Zhang, Sen, Liu, Qi, Wang, Wei, Lv, Hangbing, Zuo, Qingyun, Wang, Yan, Li, Yingtao, Lian, Wentai, Long, Shibing, Wang, Qin, Liu, Ming. Programming resistive switching memory by a charged capacitor. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 102(4): 1003-1007, https://www.webofscience.com/wos/woscc/full-record/WOS:000288253600031.
[28] Lian WenTai, Long ShiBing, Lue HangBing, Liu Qi, Li YingTao, Zhang Sen, Wang Yan, Huo ZongLiang, Dai YueHua, Chen JunNing, Liu Ming. Approaches for improving the performance of filament-type resistive switching memory. CHINESE SCIENCE BULLETIN[J]. 2011, 56(4-5): 461-464, http://lib.cqvip.com/Qikan/Article/Detail?id=37181485.
[29] Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Wei, Wang, Qin, Huo, Zongliang, Wang, Yan, Zhang, Sen, Liu, Su, Liu, Ming. Reset Instability in Cu/ZrO2:Cu/Pt RRAM Device. IEEE ELECTRON DEVICE LETTERS[J]. 2011, 32(3): 363-365, https://www.webofscience.com/wos/woscc/full-record/WOS:000287658400047.
[30] LIAN WenTai, LONG ShiBing, LU HangBing, LIU Qi, LI YingTao, ZHANG Sen, WANG Yan, HUO ZongLiang, DAI YueHua, CHEN JunNing, LIU Ming. Approaches for improving the performance of filament-type resistive switching memory. 中国科学通报:英文版. 2011, 56(4): 461-464, http://lib.cqvip.com/Qikan/Article/Detail?id=37181485.
[31] Zuo, Qingyun, Long, Shibing, Yang, Shiqian, Liu, Qi, Shao, Lubing, Wang, Qin, Zhang, Sen, Li, Yingtao, Wang, Yan, Liu, Ming. ZrO2-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(4): 344-346, http://www.irgrid.ac.cn/handle/1471x/1092197.
[32] Wang, Yan, Lv, Hangbing, Wang, Wei, Liu, Qi, Long, Shibing, Wang, Qin, Huo, Zongliang, Zhang, Sen, Li, Yingtao, Zuo, Qingyun, Lian, Wentai, Yang, Jianhong, Liu, Ming. Highly Stable Radiation-Hardened Resistive-Switching Memory. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(12): 1470-1472, https://www.webofscience.com/wos/woscc/full-record/WOS:000284541400038.
[33] Lu, Yingtao, Long, Shibing, Liu, Qi, Wang, Qin, Zhang, Manhong, Lv, Hangbing, Shao, Lubing, Wang, Yan, Zhang, Sen, Zuo, Qingyun, Liu, Su, Liu, Ming. Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2010, 4(5-6): 124-126, https://www.webofscience.com/wos/woscc/full-record/WOS:000279658900010.
[34] Li, Yingtao, Long, Shibing, Zhang, Manhong, Liu, Qi, Shao, Lubing, Zhang, Sen, Wang, Yan, Zuo, Qingyun, Liu, Su, Liu, Ming. Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications. IEEE ELECTRON DEVICE LETTERS[J]. 2010, 31(2): 117-119, http://www.irgrid.ac.cn/handle/1471x/1092192.
[35] Wang, Yan, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Qin, Zhang, Manhong, Zhang, Sen, Li, Yingtao, Zuo, Qingyun, Yang, Jianhong, Liu, Ming. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications. NANOTECHNOLOGY[J]. 2010, 21(4): http://www.irgrid.ac.cn/handle/1471x/1092189.
[36] Butcher, Brian, He, Xiaoli, Huang, Mengbing, Wang, Yan, Liu, Qi, Lv, Hangbing, Liu, Ming, Wang, Wei. Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices. NANOTECHNOLOGY[J]. 2010, 21(47): http://dx.doi.org/10.1088/0957-4484/21/47/475206.
[37] Zuo, Qingyun, Long, Shibing, Liu, Qi, Zhang, Sen, Wang, Qin, Li, Yingtao, Wang, Yan, Liu, Ming. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(7): http://www.irgrid.ac.cn/handle/1471x/1092159.
[38] Liu, Qi, Dou, Chunmeng, Wang, Yan, Long, Shibing, Wang, Wei, Liu, Ming, Zhang, Manhong, Chen, Junning. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device. APPLIED PHYSICS LETTERS[J]. 2009, 95(2): http://www.irgrid.ac.cn/handle/1471x/1092169.
[39] 李颖弢, 刘明, 龙世兵, 刘琦, 张森, 王艳, 左青云, 王琴, 胡媛, 刘肃. 基于I-V特性的阻变存储器的阻变机制研究. 微纳电子技术. 2009, 46(3): 134-140, http://lib.cqvip.com/Qikan/Article/Detail?id=29764957.
[40] 左青云, 刘明, 龙世兵, 王琴, 胡媛, 刘琦, 张森, 王艳, 李颖弢. 阻变存储器及其集成技术研究进展. 微电子学. 2009, 39(4): 546-551, http://lib.cqvip.com/Qikan/Article/Detail?id=31209787.

科研活动

   
科研项目
( 1 ) Flash存储器辐照效应模拟研究, 主持, 部委级, 2015-09--2018-08
( 2 ) 阻变存储器辐照效应及空间应用研究, 主持, 国家级, 2015-01--2017-12