徐昊 男 中国科学院微电子研究所
电子邮件： xuhao@ime.ac.cn
通信地址： 北京市朝阳区北土城西路3号
研究领域
主要研究氧化铪基铁电器件技术，感兴趣的课题包括氧化铪基铁电材料特性调控、铁电晶体管可靠性表征与建模等。
招生信息
招生专业
招生方向
教育背景
工作经历
工作简历
出版信息
近五年发表论文
（1） Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 通讯作者;
（2） Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 通讯作者;
（3） The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor, APPLIED PHYSICS LETTERS, 2024, 通讯作者;
（4） Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 第 6 作者;
（5） Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing, MICROELECTRONICS JOURNAL, 2023, 第 9 作者;
（6） Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack, CHINESE PHYSICS B, 2023, 第 2 作者;
（7） Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 第 2 作者;
（8） Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 通讯作者;
（9） A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 通讯作者;
（10） A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 通讯作者;
（11） Advanced process and electron device technology, TSINGHUA SCIENCE AND TECHNOLOGY, 2022, 第 4 作者;
（12） Significant improvement of endurance of Si FeFET through minor hysteresis loop and narrow write pulse width, APPLIED PHYSICS EXPRESS, 2022, 第 2 作者;
（13） Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 通讯作者;
（14） Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 通讯作者;
（15） First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack, JOURNAL OF APPLIED PHYSICS, 2022, 第 2 作者;
（16） A Compact Fully Ferroelectric-FETs Reservoir Computing Network With Sub-100 ns Operating Speed, IEEE ELECTRON DEVICE LETTERS, 2022, 第 9 作者;
（17） Impact of mobility degradation on endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure, JOURNAL OF APPLIED PHYSICS, 2022, 通讯作者;
（18） Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfOx a Hf0.5Zr0.5O2/SiOx Interface to Suppress Oxygen Vacancy Generation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 第 2 作者;
（19） 全球集成电路技术合作研发的发展现状及其经验启示, Status of Global Research and Development Cooperation in Integrated Circuits and Its Inspiration, 前瞻科技, 2022, 第 4 作者;
（20） Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 通讯作者;
（21） Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 通讯作者.