主要研究氧化铪基铁电器件技术，感兴趣的课题包括氧化铪基铁电材料特性调控、铁电晶体管可靠性表征与建模等。

140100-集成电路科学与工程

氧化铪基铁电器件技术

2013-08--2016-07   中国科学院微电子研究所   微电子学与固体电子学工学博士学位
2010-08--2013-06   中国科学院微电子研究所   集成电路工程硕士学位
2006-08--2010-06   吉林大学，电子科学与工程学院   电子与科学技术工学学士学位

   

2022-09~现在, 中国科学院微电子研究所, 副研究员
2016-07~2022-09,中国科学院微电子研究所, 助理研究员

   

1. Hao Xu, Saifei Dai, Xianzhou Shao, Min Liao, Zeqi Chen, Tao Hu, Runhao Han, Jia Yang, Yajing Ding, Yuanyuan Zhao, Xinpei Jia, Xiaoyu Ke, Xiaoqing Sun, Junshuai Chai*, Xiaolei Wang*, and Wenwu Wang, “The V_th shift mechanism in MIFIS FeFET: A field-driven perspective,” Applied Physics Letters, vol. 127, no. 16, 2025.

2. Tao Hu, Xinpei Jia, Runhao Han, Jia Yang, Mingkai Bai, Saifei Dai, Zeqi Chen, Yajing Ding, Xianzhou Shao, Shuai Yang, Kai Han, Yanrong Wang, Jing Zhang, Yuanyuan Zhao, Xiaoyu Ke, Xiaoqing Sun, Junshuai Chai, Hao Xu*, Xiaolei Wang*, Wenwu Wang, and Tianchun Ye, “Effect of Top Al₂O₃ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al₂O₃/Hf_0.5Zr_0.5O₂/SiO_x/Si (MIFIS) Gate Structure,” IEEE Transactions on Electron Devices, vol. 72, no. 11, pp. 5958-5965, 2025.

3. Mingkai Bai, Xiaoqing Sun, Tao Hu, Yajing Ding, Xinpei Jia, Runhao Han, Xiaoyu Ke, Junshuai Chai, Kai Han, Hao Xu*, Xiaolei Wang*, Wenwu Wang, and Tianchun Ye, "Effects of Unipolar and Bipolar Pulses on Leakage and Breakdown in HZO-Based FeFETs: A Path to Improved Endurance," IEEE Transactions on Electron Devices, vol. 72, no. 9, pp. 4856-4864, 2025.

4. Yajing Ding, Saifei Dai, Xiaoqing Sun, Xianzhou Shao, Min Liao, Fengbin Tian, Xinpei Jia, Hongyang Fan, Yuanyuan Zhao, Tao Hu, Mingkai Bai, Xiaoyu Ke, Junshuai Chai, Jinjuan Xiang, Kai Han, Hao Xu*, Xiaolei Wang*, Wenwu Wang, and Tianchun Ye, "Impact of Saturated Spontaneous Polarization on the Memory Window and Endurance of Hafnium-Based Si Channel FeFET," IEEE Transactions on Electron Devices, vol. 72, no. 7, pp. 3550-3557, 2025.

5. Mingkai Bai, Xiaoqing Sun, Runhao Han, Yajing Ding, Tao Hu, Yuanyuan Zhao, Saifei Dai, Kai Han, Junshuai Chai, Hao Xu*, Xiaolei Wang*, Wenwu Wang, and Tianchun Ye, "A One-Transistor DRAM Memory Cell Using HfO₂-Based Ferroelectric-Assisted Charge Trapping Concept," IEEE Transactions on Electron Devices, vol. 72, no. 6, pp. 2956-2963, 2025.

6. Saifei Dai, Hao Xu*, Fengbin Tian, Xianzhou Shao, Xiaoqing Sun, Junshuai Chai, Xiaolei Wang*, and Wenwu Wang, "Deep Understanding of Charge Trapping Phenomenon in n-FeFET and Endurance Improvement by Interlayer Engineering," in 2024 IEEE 17^th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 22-25 Oct. 2024 2024, pp. 1-3.

7. Min Liao, Xianzhou Shao, Hao Xu*, Junshuai Chai, Xiaoqing Sun, Xiaoyu Ke, Jinjuan Xiang, Xiaolei Wang*, and Wenwu Wang, "Investigation of Endurance Characteristics of AFeFET: Electrical and Thermal Fatigue Phenomenon," International Conference on Solid State Devices and Materials 2024.

8. Xiaoyu Ke, Saifei Dai, Hao Xu*, Junshuai Chai, Xiaolei Wang*, and Wenwu Wang, "The physical origin of inhomogeneous field within HfO₂-based ferroelectric capacitor," Applied Physics Letters, vol. 124, no. 10, 2024.

9. Xianzhou Shao, Junshuai Chai, Fengbin Tian, Shujing Zhao, Jiahui Duan, Xiaoyu Ke, Xiaoqing Sun, Jinjuan Xiang, Kai Han, Yanrong Wang, Hao Xu*, Xiaolei Wang*, Jing Zhang, Wenwu Wang, and Tianchun Ye, "Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ V_th Measurement," IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3043-3050, 2023.

10. Min Liao, Junshuai Chai, Jinjuan Xiang, Kai Han, Yanrong Wang, Hao Xu*, Xiaolei Wang*, Jing Zhang, and Wenwu Wang, "A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor," IEEE Transactions on Electron Devices, vol. 70, no. 9, pp. 4940-4944, 2023.

（1）2026年1月至2029年12月，在研，主持国家自然科学基金面上项目（批准号：62574220）

（2）2023年1月至2025年12月，结项，参与国家自然科学基金重大研究计划培育项目（批准号：92264104）

（3）2020年1月至2022年12月，结项，主持国家自然科学基金青年基金项目（批准号：61904193）