基本信息
袁国栋  男  博导  中国科学院半导体研究所
电子邮件: gdyuan@semi.ac.cn
通信地址: 清华东路甲35号
邮政编码: 100083

研究领域

1、硅量子材料与器件

2、半导体材料与器件

3、半导体新能源应用

招生信息

本研究组主要从事硅量子材料与芯片研究,主要关注量子霍尔效应,二维电子气输运特性方向研究,欢迎感兴趣的同学报考本研究组的硕博连读生。

 

联系方式:
通信地址:北京市海淀区清华东路甲35号半导体所照明中心
电子邮件:gdyuan@semi.ac.cn
电话:010-82305494
邮政编码:100083

招生专业
080903-微电子学与固体电子学
招生方向
硅量子材料与器件
半导体材料与器件
半导体新能源应用

教育背景

2001-09--2006-06   浙江大学   博士
1995-09--1999-06   北京科技大学   学士

工作经历

   
工作简历
2012-01~现在, 中国科学院半导体研究所, 研究员
2011-01~2011-12,德国柏林洪堡大学, 博士后
2009-09~2010-12,德国波鸿鲁尔大学, 博士后
2006-08~2009-09,香港城市大学, 博士后

出版信息

   
发表论文
[1] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Wu, Xingjun, Han, Weihua. Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2022, 138: http://dx.doi.org/10.1016/j.mssp.2021.106308.
[2] Zhao, Shuai, Yuan, Guodong, Zhang, Di, Xu, Pengfei, Li, Guozheng, Han, Weihua. Formation and elimination mechanism of thermal blistering in Al2O3/Si system. JOURNAL OF MATERIALS SCIENCE[J]. 2021, 56(31): 17478-17489, http://dx.doi.org/10.1007/s10853-021-06441-9.
[3] Pu, Yongjie, Liu, Wenqiang, Liu, Yunyong, Jiang, Qiwei, Li, Yinli, Zhao, Zuncheng, Yuan, Guodong, Zhang, Yang. Enhancing effects of reduced graphene oxide on photoluminescence of CsPbBr(3)perovskite quantum dots. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2020, 8(22): 7447-7453, https://www.webofscience.com/wos/woscc/full-record/WOS:000542764300017.
[4] Zhao, Shuai, Yuan, Guodong, Wang, Qi, Liu, Wenqiang, Wang, Ru, Yang, Shenghua. Quasi-hydrophilic black silicon photocathodes with inverted pyramid arrays for enhanced hydrogen generation. NANOSCALE[J]. 2020, 12(1): 316-325, https://www.webofscience.com/wos/woscc/full-record/WOS:000504106900027.
[5] 向云青, 权菲菲, 温慧, 袁国栋, 崔菊, 黄术强. 基于仿生微流控技术的肠道器官芯片构建. 集成技术. 2020, 9(3): 56-65, http://lib.cqvip.com/Qikan/Article/Detail?id=7102046489.
[6] Wang, Qi, Yuan, Guodong, Zhao, Shuai, Liu, Wenqiang, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin. Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution. ELECTROCHEMISTRY COMMUNICATIONS[J]. 2019, 103: 66-71, http://dx.doi.org/10.1016/j.elecom.2019.05.005.
[7] Liu, Wenqiang, Yuan, Guodong, Zhang, Yang, Wang, Qi, Zhao, Shuai, Liu, Zhiqiang, Wei, Tongbo, Wang, Junxi, Li, Jinmin. Localized exciton emission in CsPbBr3 nanocrystals synthesized with excess bromide ions. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2019, 7(35): 10783-10788, https://www.webofscience.com/wos/woscc/full-record/WOS:000485911100005.
[8] 田婷, 任芳, 梁萌, 王江华, 刘志强, 伊晓燕, 袁国栋, 王军喜, 李晋闽. 阵列式高压交直流LED芯片的隔离工艺. 照明工程学报. 2019, 30(3): 81-85, http://lib.cqvip.com/Qikan/Article/Detail?id=7002322889.
[9] 王琦, 袁国栋, 刘文强, 赵帅, 张璐, 刘志强, 王军喜, 李晋闽. Monolithic semi-polar(11^-01)InGaN/GaN near white light-emitting diodes on micro-striped Si(100)substrate. 中国物理B:英文版[J]. 2019, 28(8): 349-354, http://lib.cqvip.com/Qikan/Article/Detail?id=7002765369.
[10] Wu, Shaoteng, Wang, Liancheng, Liu, Zhiqiang, Wang, Yunyu, Cheng, Cheng, Lin, Chen, Zhang, Shuo, Li, Tao, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence. NANOTECHNOLOGY[J]. 2019, 30(4): [11] Zhao, Shuai, Yuan, Guodong, Wang, Qi, Liu, Wenqiang, Zhang, Shuo, Liu, Zhiqiang, Wang, Junxi, Li, Jinmin. Morphology control of c-Si via facile copper-assisted chemical etching: Managements on etch end-points. APPLIED SURFACE SCIENCE[J]. 2019, 489: 776-785, https://www.webofscience.com/wos/woscc/full-record/WOS:000474530600083.
[12] Wang Qi, Yuan Guodong, Liu Wenqiang, Zhao Shuai, Zhang Lu, Liu Zhiqiang, Wang Junxi, Li Jinmin. Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate. Chinese Physics. B[J]. 2019, 28(8): http://lib.cqvip.com/Qikan/Article/Detail?id=7002765369.
[13] Wang, Qi, Yuan, Guodong, Liu, Wenqiang, Zhao, Shuai, Liu, Zhiqiang, Chen, Yu, Wang, Junxi, Li, Jinmin. Semipolar (1101) InGaN/GaN red-amber-yellow light-emitting diodes on triangular-striped Si (100) substrate. JOURNAL OF MATERIALS SCIENCE[J]. 2019, 54(10): 7780-7788, [14] Wang, Qi, Yuan, GuoDong, Liu, WenQiang, Zhao, Shuai, Zhang, Lu, Liu, ZhiQiang, Wang, JunXi, Li, JinMin. Monolithic semi-polar (1(1)over-bar01) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate. CHINESE PHYSICS B[J]. 2019, 28(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000481705700002.
[15] Chang, Hongliang, Chen, Zhaolong, Li, Weijiang, Yan, Jianchang, Hou, Rui, Yang, Shenyuan, Liu, Zhiqiang, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Gao, Peng, Wei, Tongbo. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. APPLIED PHYSICS LETTERS[J]. 2019, 114(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000460820600009.
[16] Zhang, Liang, Yan, Jianchang, Wu, Qingqing, Guo, Yanan, Yang, Chao, Wei, Tongbo, Liu, Zhiqiang, Yuan, Guodong, Wei, Xuecheng, Zhao, Lixia, Zhang, Yun, Li, Jinmin, Wang, Junxi. Improved crystalline quality of Al-rich n-AlGaN by regrowth on nanoporous template fabricated by electrochemical etching. JOURNAL OF NANOPHOTONICS[J]. 2018, 12(4): [17] 王洁, 校亮, 毕冬雪, 韦婧, 袁国栋. 风化煤改变黄河三角洲盐渍化土壤溶液组分的过程. 土壤学报[J]. 2018, 55(6): 1367-1376, http://lib.cqvip.com/Qikan/Article/Detail?id=6100077976.
[18] Wang, Qi, Yuan, Guodong, Wei, Tongbo, Liu, Zhiqiang, Liu, Wenqiang, Zhang, Lu, Wei, Xuecheng, Wang, Junxi, Li, Jinmin. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates. JOURNAL OF MATERIALS SCIENCE[J]. 2018, 53(24): 16439-16446, [19] Ren, Fang, Yin, Yue, Wang, Yunyu, Liu, Zhiqiang, Liang, Meng, Ou, Haiyan, Ao, Jinping, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin, Dasa, Dheeraj, Weman, Helge. Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. MATERIALS[J]. 2018, 11(12): https://doaj.org/article/cc0ec8a5169743a7b638ff087b6e9148.
[20] Liu, Zhiqiang, Yi, Xiaoyan, Wang, Liancheng, Wei, Tongbo, Yuan, Guodong, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Shi, Yi, Zhang, Yong. Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2018, 33(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000447204500001.
[21] Yin, Yue, Ren, Fang, Wang, Yunyu, Liu, Zhiqiang, Ao, Jinping, Liang, Meng, Wei, Tongbo, Yuan, Guodong, Ou, Haiyan, Yan, Jianchang, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin. Direct van derWaals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2. MATERIALS[J]. 2018, 11(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000456419200122.
[22] Huang, Peng, Yuan, Guodong, Wei, Tongbo, Li, Jinmin, Ashfold, Michael N R. Introducing carbon dots to moderate the blue emission from zinc vanadium oxide hydroxide hydrate nanoplates. RSC ADVANCES[J]. 2018, 8(37): 20686-20691, https://www.webofscience.com/wos/woscc/full-record/WOS:000434694300026.
[23] Wu, Shaoteng, Wang, Liancheng, Liu, Zhiqiang, Yi, Xiaoyan, Huang, Yang, Yang, Chao, Wei, Tongbo, Yan, Jianchang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate. NANOSCALE[J]. 2018, 10(13): 5888-5896, [24] Wu, Shaoteng, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Yan, Jianchang, Yuan, Guodong, Wei, Tongbo, Wang, Junxi, Li, Jinmin. Crystallographic orientation control and optical properties of GaN nanowires. RSC ADVANCES[J]. 2018, 8(4): 2181-2187, https://www.webofscience.com/wos/woscc/full-record/WOS:000422863900059.
[25] 袁国栋. Van der waals epitaxy of GaN-based light emitting diodes on wet transfered multilayer graphene film. JJAP. 2017, [26] Ni, Shibing, Huang, Peng, Chao, Dongliang, Yuan, Guodong, Zhang, Lichun, Zhao, Fengzhou, Li, Jinmin. Amorphous GaN@Cu Freestanding Electrode for High-Performance Li-Ion Batteries. ADVANCED FUNCTIONAL MATERIALS[J]. 2017, 27(35): https://www.webofscience.com/wos/woscc/full-record/WOS:000411027300001.
[27] 袁国栋. Effect of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si (100) substrate. Optoelectronics Lett.. 2017, [28] Wu, Shaoteng, Wang, Liancheng, Yi, Xiaoyan, Liu, Zhiqiang, Wei, Tongbo, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS[J]. 2017, 122(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000416830400006.
[29] Li, Yang, Zhao, Yun, Wei, Tongbo, Liu, Zhiqiang, Duan, Ruifei, Wang, Yunyu, Zhang, Xiang, Wu, QingQing, Yan, Jianchang, Yi, Xiaoyao, Yuan, Guodong, Wang, Junxi, Li, Jimin. Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2017, 56(8): [30] 袁国栋. Amorphous GaN@Cu freestanding electrode for high performance Li ion batteres. Adv. Funct. Mater.. 2017, [31] 袁国栋. Selective area growth of periodic nanopyramid light emitting diode arrays on GaN/sapphire templates patterned by multi exposure colloidal lighography. Nanotechnology. 2017, [32] Xiong, Zhuo, Wei, Tongbo, Zhang, Yonghui, Zhang, Xiang, Yang, Chao, Liu, Zhiqiang, Yuan, Guodong, Li, Jinmin, Wang, Junxi. Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography. NANOTECHNOLOGY[J]. 2017, 28(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000400812600003.
[33] Zeng, Qing, Chen, Zhaolong, Zhao, Yun, Wei, Tongbo, Chen, Xiang, Zhang, Yun, Yuan, Guodong, Li, Jinmin. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2016, 55(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000379698900025.
[34] Wang, K C, Yuan, G D, Wu, R W, Lu, H X, Liu, Z Q, Wei, T B, Wang, J X, Li, J M, Zhang, W J. GaN nanowire arrays by a patterned metal-assisted chemical etching. JOURNAL OF CRYSTAL GROWTH[J]. 2016, 440: 96-101, http://dx.doi.org/10.1016/j.jcrysgro.2016.01.017.
[35] Huang, Yang, Liu, Zhiqiang, Yi, Xiaoyan, Guo, Yao, Yuan, Guodong, Wang, Junxi, Wang, Guohong, Li, Jinmin. Investigation of Isoelectronic Doping in p-GaN Based on the Thermal Quenching of UVL Band. IEEE PHOTONICS JOURNAL[J]. 2016, 8(5): http://ir.semi.ac.cn/handle/172111/28087.
[36] Liu, Zhiqiang, Fu, Binglei, Yi, Xiaoyan, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Luna, Ferguson, Ian. Co-doping of magnesium with indium in nitrides: first principle calculation and experiment. RSC ADVANCES[J]. 2016, 6(6): 5111-5115, http://ir.semi.ac.cn/handle/172111/28097.
[37] Huang, Yang, Liu, Zhiqiang, Yi, Xiaoyan, Guo, Yao, Wu, Shaoteng, Yuan, Guodong, Wang, JunXi, Wang, Guohong, Li, Jinmin. Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes. AIP ADVANCES[J]. 2016, 6(4): http://ir.semi.ac.cn/handle/172111/28088.
[38] Wang, L, Yuan, G D, Duan, R F, Huang, F, Wei, T B, Liu, Z Q, Wang, J X, Li, J M. Tunable bandgap in hybrid perovskite CH3NH3Pb(Br3-yXy) single crystals and photodetector applications. AIP ADVANCES[J]. 2016, 6(4): http://ir.semi.ac.cn/handle/172111/27960.
[39] Wu, R W, Yuan, G D, Wang, K C, Wei, T B, Liu, Z Q, Wang, G H, Wang, J X, Li, J M. Bilayer-metal assisted chemical etching of silicon microwire arrays for photovoltaic applications. AIP ADVANCES[J]. 2016, 6(2): http://ir.semi.ac.cn/handle/172111/28094.
[40] Fu, Binglei, Cheng, Yan, Si, Zhao, Wei, Tongbo, Zeng, Xionghui, Yuan, Guodong, Liu, Zhiqiang, Lu, Hongxi, Yi, Xiaoyan, Li, Jinmin, Wang, Junxi. Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode. RSC ADVANCES[J]. 2015, 5(122): 100646-100650, http://ir.semi.ac.cn/handle/172111/27010.
[41] Shan, Liang, Wei, Tongbo, Sun, Yuanping, Zhang, Yonghui, Zhen, Aigong, Xiong, Zhuo, Wei, Yang, Yuan, Guodong, Wang, Junxi, Li, Jinmin. Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes. OPTICS EXPRESS[J]. 2015, 23(15): A957-A965, http://ir.semi.ac.cn/handle/172111/27009.
[42] Hong, M, Yuan, G D, Peng, Y, Chen, H Y, Zhang, Y, Liu, Z Q, Wang, J X, Cai, B, Zhu, Y M, Chen, Y, Liu, J H, Li, J M. Control carrier recombination of multi-scale textured black silicon surface for high performance solar cells. APPLIED PHYSICS LETTERS[J]. 2014, 104(25): http://ir.semi.ac.cn/handle/172111/26297.
[43] Chen, H Y, Yuan, G D, Peng, Y, Hong, M, Zhang, Y B, Zhang, Y, Liu, Z Q, Wang, J X, Cai, Bin, Zhu, Y M, Li, J M. Enhanced performance of solar cells with optimized surface recombination and efficient photon capturing via anisotropic-etching of black silicon. APPLIED PHYSICS LETTERS[J]. 2014, 104(19): http://ir.semi.ac.cn/handle/172111/26298.
[44] Wang, Liancheng, Ma, Jun, Liu, Zhiqiang, Yi, Xiaoyan, Yuan, Guodong, Wang, Guohong. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting diodes array. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(13): http://ir.semi.ac.cn/handle/172111/24760.
[45] 袁国栋. Nitride-based micro-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching. Optics Express. 2013, [46] Ma, Jun, Wang, Liancheng, Liu, Zhiqiang, Yuan, Guodong, Ji, Xiaoli, Ma, Ping, Wang, Junxi, Yi, Xiaoyan, Wang, Guohong, Li, Jinmin. Hexagonal pyramids shaped GaN light emitting diodes array by N-polar wet etching. Materials research society symposium proceedings[J]. 2013, 1538: 353-359, http://ir.semi.ac.cn/handle/172111/26077.
[47] Ma, Jun, Wang, Liancheng, Liu, Zhiqiang, Yuan, Guodong, Ji, Xiaoli, Ma, Ping, Wang, Junxi, Yi, Xiaoyan, Wang, Guohong, Li, Jinmin. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching. OPTICS EXPRESS[J]. 2013, 21(3): 3547-3556, http://ir.semi.ac.cn/handle/172111/24374.
[48] Wang, Liancheng, Liu, Zhiqiang, Zheng, Haiyang, Zhang, Yiyun, Cheng, Yan, Xie, Haizhong, Rao, Liqiang, Wei, Tongbo, Yang, Hua, Yuan, Guodong, Yi, Xiaoyan, Wang, Guohong. Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches to vertical devices. RSC ADVANCES[J]. 2013, 3(27): 10934-10943, https://www.webofscience.com/wos/woscc/full-record/WOS:000320467500049.
[49] Yuan, Guodong, Mitdank, Ruediger, Mogilatenko, Anna, Fischer, Saskia F. Porous Nanostructures and Thermoelectric Power Measurement of Electro-Less Etched Black Silicon. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2012, 116(25): 13767-13773, https://www.webofscience.com/wos/woscc/full-record/WOS:000305769900037.
[50] He, Haiping, Lin, Shisheng, Yuan, Guodong, Zhang, Liqiang, Zhang, Wenfeng, Luo, Linbao, Cao, Yulin, Ye, Zhizhen, Lee, Shuit Tong. Single-Crystalline Sodium-Doped p-Type ZnO and ZnMgO Nanowires via Combination of Thin-Film and Nano Techniques. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2011, 115(39): 19018-19022, https://www.webofscience.com/wos/woscc/full-record/WOS:000295245500013.
[51] Yuan, G D, Ng, T W, Zhou, Y B, Wang, F, Zhang, W J, Tang, Y B, Wang, H B, Luo, L B, Wang, P F, Bello, I, Lee, C S, Lee, S T. p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer. APPLIED PHYSICS LETTERS[J]. 2010, 97(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000283216900077.
[52] Yuan, G D, Zhou, Y B, Guo, C S, Zhang, W J, Tang, Y B, Li, Y Q, Chen, Z H, He, Z B, Zhang, X J, Wang, P F, Bello, I, Zhang, R Q, Lee, C S, Lee, S T. Tunable Electrical Properties of Silicon Nanowires via Surface-Ambient Chemistry. ACS NANO[J]. 2010, 4(6): 3045-3052, https://www.webofscience.com/wos/woscc/full-record/WOS:000278888600012.
[53] Tang, Y B, Lee, C S, Chen, Z H, Yuan, G D, Kang, Z H, Luo, L B, Song, H S, Liu, Y, He, Z B, Zhang, W J, Elello, I, Lee, S T. High-Quality Graphenes via a Facile Quenching Method for Field-Effect Transistors. NANO LETTERS[J]. 2009, 9(4): 1374-1377, https://www.webofscience.com/wos/woscc/full-record/WOS:000265030000017.
[54] Yuan, G D, Zhang, W J, Yang, Y, Tang, Y B, Li, Y Q, Wang, J X, Meng, X M, He, Z B, Wu, C M L, Bello, I, Lee, C S, Lee, S T. Graphene sheets via microwave chemical vapor deposition. CHEMICAL PHYSICS LETTERS[J]. 2009, 467(4-6): 361-364, http://dx.doi.org/10.1016/j.cplett.2008.11.059.
[55] Song, H S, Zhang, W J, Yuan, G D, He, Z B, Zhang, W F, Tang, Y B, Luo, L B, Lee, C S, Bello, I, Lee, S T. p-type conduction in arsenic-doped ZnSe nanowires. APPLIED PHYSICS LETTERS[J]. 2009, 95(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000268405300068.
[56] Chen, Z H, Tang, Y B, Liu, C P, Leung, Y H, Yuan, G D, Chen, L M, Wang, Y Q, Bello, I, Zapien, J A, Zhang, W J, Lee, C S, Lee, S T. Vertically Aligned ZnO Nanorod Arrays Sentisized with Gold Nanoparticles for Schottky Barrier Photovoltaic Cells. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2009, 113(30): 13433-13437, https://www.webofscience.com/wos/woscc/full-record/WOS:000268233800074.
[57] Guo, ChunSheng, Luo, LinBao, Yuan, GuoDong, Yang, XiaoBao, Zhang, RuiQin, Zhang, WenJun, Lee, ShuitTong. Surface Passivation and Transfer Doping of Silicon Nanowires. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION[J]. 2009, 48(52): 9896-9900, [58] Zhang, W F, He, Z B, Yuan, G D, Jie, J S, Luo, L B, Zhang, X J, Chen, Z H, Lee, C S, Zhang, W J, Lee, S T. High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors. APPLIED PHYSICS LETTERS[J]. 2009, 94(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000264633500053.
[59] Chen, Z H, Tang, Y B, Liu, Y, Yuan, G D, Zhang, W F, Zapien, J A, Bello, I, Zhang, W J, Lee, C S, Lee, S T. ZnO nanowire arrays grown on Al:ZnO buffer layers and their enhanced electron field emission. JOURNAL OF APPLIED PHYSICS[J]. 2009, 106(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000270378100121.
[60] Jie, Jiansheng, Zhang, Wenjun, Peng, Kuiqing, Yuan, Guodong, Lee, Chun Sing, Lee, ShuitTong. Surface-Dominated Transport Properties of Silicon Nanowires. ADVANCED FUNCTIONAL MATERIALS[J]. 2008, 18(20): 3251-3257, https://www.webofscience.com/wos/woscc/full-record/WOS:000260707300017.
[61] Zhang, Wenfeng, Jie, Jiansheng, Luo, Linbao, Yuan, Guodong, He, Zhubing, Yao, Zhiqiang, Chen, Zhenhua, Lee, ChunSing, Zhang, Wenjun, Lee, ShuitTong. Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device. APPLIED PHYSICS LETTERS[J]. 2008, 93(18): https://www.webofscience.com/wos/woscc/full-record/WOS:000260778100070.
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科研活动

   
科研项目
( 1 ) 低成本多孔黑硅材料可控制备及其太阳能电池研究, 主持, 国家级, 2013-01--2015-12
( 2 ) 中国科学院****:微纳结构硅材料太阳能电池研究, 主持, 部委级, 2012-05--2015-12
( 3 ) 纳米线晶体管器件及其表/界面特性研究, 主持, 国家级, 2015-01--2017-12
( 4 ) 面向与IC工艺兼容的Si(100)衬底高亮度3D发光器件研究, 主持, 国家级, 2015-01--2018-12
( 5 ) 新型大功率GaN电子器件外延材料及芯片制备技术研究, 主持, 国家级, 2015-01--2017-12
( 6 ) 固态紫外光源系统集成技术与应用产品开发示范, 主持, 国家级, 2016-07--2021-06
( 7 ) 硅基能带调控与高效发光机理, 参与, 部委级, 2019-01--2024-12

合作情况

   
项目协作单位
复旦大学,南开大学,中国科学院电工研究所,苏州大学,浙江大学,德国柏林洪堡大学,德国波鸿鲁尔大学,香港城市大学,苏州大学

指导学生

已指导学生

吴瑞伟  硕士研究生  080903-微电子学与固体电子学  

王克超  硕士研究生  080903-微电子学与固体电子学  

张璐  硕士研究生  080903-微电子学与固体电子学  

现指导学生

王琦  博士研究生  080903-微电子学与固体电子学  

刘文强  博士研究生  080903-微电子学与固体电子学  

任芳  博士研究生  080903-微电子学与固体电子学  

张迪  硕士研究生  080903-微电子学与固体电子学  

赵帅  博士研究生  080903-微电子学与固体电子学