基本信息
张东 男 硕导 中国科学院半导体研究所
电子邮件： zhangdong@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号中国科学院半导体研究所
邮政编码： 100083
电子邮件： zhangdong@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号中国科学院半导体研究所
邮政编码： 100083
招生信息
招生专业
080501-材料物理与化学
070205-凝聚态物理
070205-凝聚态物理
招生方向
凝聚态物理，材料物理，计算物理
出版信息
发表论文
[1] Sheng-Bin Yu, Shu-Han Sun, Ma Zhou, Dong Zhang, 常凯. Current-induced spin polarization in Janus WSSe monolayer. Physical Review B[J]. 2023, 第 4 作者 通讯作者 107: 125426, https://doi.org/10.1103/PhysRevB.107.125426.
[2] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[3] Zhan, Guohui, Yang, Zhilong, Luo, Kun, Zhang, Dong, Lou, Wenkai, Liu, Jiangtao, Wu, Zhenhua, Chang, Kai. Spin-dependent tunneling in 2D MnBi2Te4-based magnetic tunnel junctions. MRS BULLETIN[J]. 2022, 第 4 作者47(12): 1177-1184, http://dx.doi.org/10.1557/s43577-022-00381-8.
[4] LiangZhongLin, YiYunLing, DongZhang, ZhenHuaWu. Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface. Chinese Physics B[J]. 2022, 第 3 作者31(11): 117201, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ac7a0f.
[5] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[6] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[7] Shi, Likun, Zhang, Dong, Chang, Kai, Song, Justin C W. Geometric Photon-Drag Effect and Nonlinear Shift Current in Centrosymmetric Crystals. PHYSICAL REVIEW LETTERS[J]. 2021, 第 2 作者126(19): http://dx.doi.org/10.1103/PhysRevLett.126.197402.
[8] Lin, Liangzhong, Liu, Yanfei, Yu, Jiahan, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-flip manipulation in HgTe/CdTe heterostructure interface states with Rashba and Dresselhuas spin-orbit interactions. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2021, 第 5 作者125: http://dx.doi.org/10.1016/j.physe.2020.114427.
[9] YingdaChen, DongZhang, KaiChang. Exciton Vortices in Two-Dimensional Hybrid Perovskite Monolayers. Chinese Physics Letters[J]. 2020, 第 2 作者 通讯作者 37(11): 117102-117102, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/11/117102.
[10] Boras, Giorgos, Yu, Xuezhe, Fonseka, H Aruni, Zhang, Dong, Zeng, Haotian, Sanchez, Ana M, Liu, Huiyun. Checked patterned elemental distribution in AlGaAs nanowire branches via vapor-liquid-solid growth. NANOSCALE[J]. 2020, 第 4 作者12(29): 15711-15720, http://dx.doi.org/10.1039/d0nr02577a.
[11] Lin, Liangzhong, Pu, Qingmin, Shi, Zhiqiang, Li, Xiaojing, Zhang, Dong, Zhu, Jiaji, Wu, Zhenhua. Spin filtering in a HgTe topological insulator PN junction via Rashba spin-orbit interaction. SOLID STATE COMMUNICATIONS[J]. 2020, 第 5 作者313: http://dx.doi.org/10.1016/j.ssc.2020.113906.
[12] Hu, Ce, Zhang, Dong, Yan, Faguang, Li, Yucai, Lv, Quanshan, Zhu, Wenkai, Wei, Zhongming, Chang, Kai, Wang, Kaiyou. From two- to multi -state vertical spin valves without spacer layer based on Fe 3 GeTe 2 van der Waals homo-junctions. SCIENCE BULLETIN[J]. 2020, 第 2 作者65(13): 1072-1077, http://dx.doi.org/10.1016/j.scib.2020.03.035.
[13] Do, T Thu Ha, del Aguila, Andres Granados, Zhang, Dong, Xing, Jun, Liu, Sheng, Prosnikov, M A, Gao, Weibo, Chang, Kai, Christianen, Peter C M, Xiong, Qihua. Bright Exciton Fine-Structure in Two-Dimensional Lead Halide Perovskites. NANO LETTERS[J]. 2020, 第 3 作者20(7): 5141-5148, http://dx.doi.org/10.1021/acs.nanolett.0c01364.
[14] Zhang, Dong, Xiong, Qihua, Chang, Kai. B5N5 monolayer: a room-temperature light element antiferromagnetic insulator. NANOSCALE ADVANCES[J]. 2020, 第 1 作者 通讯作者 2(10): 4421-4426, http://dx.doi.org/10.1039/d0na00270d.
[15] Zhou, Ma, Yu, Shengbin, Yang, Wen, Lou, Wenkai, Cheng, Fang, Zhang, Dong, Chang, Kai. Current-induced spin polarization in monolayer InSe. PHYSICAL REVIEW B[J]. 2019, 第 6 作者100(24): http://dx.doi.org/10.1103/PhysRevB.100.245409.
[16] 张东, 娄文凯, 常凯. 半导体极性界面电子结构的理论研究. 物理学报[J]. 2019, 第 1 作者68(16): 216-224, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.68.20191239.
[17] Zhou, Ma, Zhang, Dong, Yu, Shengbin, Huang, Zhihan, Chen, Yingda, Yang, Wen, Chang, Kai. Spin-charge conversion in InSe bilayers. PHYSICAL REVIEW B[J]. 2019, 第 2 作者99(15): http://dx.doi.org/10.1103/PhysRevB.99.155402.
[18] Yao, Bo, Zhang, Dong, Zhang, Ji, Wei, Shanshan, Lin, Xuechun, Mao, Qinghe. Narrow-bandwidth actively Q-switched all-fiber laser by suppressing ASE gain self-saturation. OPTICS EXPRESS[J]. 2019, 第 2 作者27(19): 27345-27353, http://dx.doi.org/10.1364/OE.27.027345.
[19] Zhang, Rui, Wei, Bin, Zhang, Dong, Zhu, JiaJi, Chang, Kai. Few-shot machine learning in the three-dimensional Ising model. PHYSICAL REVIEW B[J]. 2019, 第 3 作者99(9): http://dx.doi.org/10.1103/PhysRevB.99.094427.
[20] Huang, Zhihan, Zhang, Dong. Bandgap engineering of PbTe ultra-thin layers by surface passivations. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2019, 第 2 作者31(29): http://dx.doi.org/10.1088/1361-648X/ab14ac.
[21] Zhang Dong, Lou WenKai, Chang Kai. Theoretical progress of polarized interfaces in semiconductors. ACTA PHYSICA SINICA[J]. 2019, 第 1 作者68(16):
[22] Shan, Hangyong, Yu, Ying, Zhang, Rui, Cheng, Runtan, Zhang, Dong, Luo, Yang, Wang, Xingli, Li, Bowen, Zu, Shuai, Lin, Feng, Liu, Zheng, Chang, Kai, Fang, Zheyu. Electron transfer and cascade relaxation dynamics of graphene quantum dots/MoS2 monolayer mixed-dimensional van der Waals heterostructures. MATERIALS TODAY[J]. 2019, 第 5 作者24: 10-16, http://dx.doi.org/10.1016/j.mattod.2019.01.015.
[23] Tian, Nan, Yang, Yanhan, Liu, Danmin, Liu, Xuelu, Tan, PingHeng, Zhang, Dong, Chang, Kai, Li, Hui, Zhao, Minjian, Li, Jian Rong, Tang, Xu, Zhang, Dandan, Zhang, Zhenlu, Xiao, Weiqiang, Yan, Hui, Zhang, Yongzhe. High Anisotropy in Tubular Layered Exfoliated KP15. ACS NANO[J]. 2018, 第 6 作者12(2): 1712-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000426615600082.
[24] Yang, Yanhan, Tian, Nan, Zhang, Yongzhe, Liu, Danmin, Zhang, Dong, Chang, Kai, Yan, Hui. Rediscovering the MP15 Family (M = Li, Na, and K) as an Anisotropic Layered Semiconducting Material. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2018, 第 5 作者9(4): 732-738, https://www.webofscience.com/wos/woscc/full-record/WOS:000425569300009.
[25] Sun Jianpeng, Zhang Dong, Chang Kai. Molybdenum Carbide: A Stable Topological Semimetal with Line Nodes and Triply Degenerate Points. 中国物理快报：英文版[J]. 2017, 第 2 作者34(2): 027102_01-027102_05, http://lib.cqvip.com/Qikan/Article/Detail?id=671579774.
[26] JianPengSun, DongZhang, KaiChang. Molybdenum Carbide: A Stable Topological Semimetal with Line Nodes and Triply Degenerate Points. Chinese Physics Letters[J]. 2017, 第 2 作者 通讯作者 34(2): 27102-027102, https://cpl.iphy.ac.cn/10.1088/0256-307X/34/2/027102.
[27] Li, Jian, Zhang, Dong, Zhu, JiaJi. Electronic structure of rectangular HgTe quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2017, 第 2 作者93: 58-62, http://dx.doi.org/10.1016/j.physe.2017.05.010.
[28] Zhou, Ma, Zhang, Rui, Sun, Jiangpeng, Lou, WenKai, Zhang, Dong, Yang, Wen, Chang, Kai. Multiband k . p theory of monolayer XSe (X=In, Ga). PHYSICAL REVIEW B[J]. 2017, 第 5 作者96(15): http://dx.doi.org/10.1103/PhysRevB.96.155430.
[29] Zhou, Xiaoying, Lou, WenKai, Zhang, Dong, Cheng, Fang, Zhou, Guanghui, Chang, Kai. Effective g factor in black phosphorus thin films. PHYSICALREVIEW B[J]. 2017, 第 3 作者95(4): 045408, http://dx.doi.org/10.1103/PhysRevB.95.045408.
[30] Sun, JianPeng, Zhang, Dong, Chang, Kai. Coexistence of topological nodal lines, Weyl points, and triply degenerate points in TaS. PHYSICAL REVIEW B[J]. 2017, 第 2 作者 通讯作者 96(4): http://dx.doi.org/10.1103/PhysRevB.96.045121.
[31] Yan, Faguang, Zhao, Lixia, Patane, Amalia, Hu, PingAn, Wei, Xia, Luo, Wengang, Zhang, Dong, Lv, Quanshan, Feng, Qi, Shen, Chao, Chang, Kai, Eaves, Laurence, Wang, Kaiyou. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. NANOTECHNOLOGY[J]. 2017, 第 7 作者28(27): http://dx.doi.org/10.1088/1361-6528/aa749e.
[32] Li, YunMei, Zhou, Xiaoying, Zhang, YanYang, Zhang, Dong, Chang, Kai. Dirac fermions and pseudomagnetic fields in two-dimensional electron gases with triangular antidot lattices. PHYSICAL REVIEW B[J]. 2017, 第 4 作者96(3): http://dx.doi.org/10.1103/PhysRevB.96.035406.
[33] Jian Li, Dong Zhang, Jia-Ji Zhu. Electronic structure of rectangular HgTe quantum dots. PHYSICA E[J]. 2017, 第 2 作者93: 58–62, http://ir.semi.ac.cn/handle/172111/28407.
[34] Zhang, Kenan, Zhang, Tianning, Cheng, Guanghui, Li, Tianxin, Wang, Shuxia, Wei, Wei, Zhou, Xiaohao, Yu, Weiwei, Sun, Yan, Wang, Peng, Zhang, Dong, Zeng, Changgan, Wang, Xingjun, Hu, Weida, Fan, Hong Jin, Shen, Guozhen, Chen, Xin, Duan, Xiangfeng, Chang, Kai, Dai, Ning. Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures. ACS NANO[J]. 2016, 第 11 作者10(3): 3852-3858, http://ir.semi.ac.cn/handle/172111/27771.
[35] Zhang, Dong, Zhang, DongBo, Yang, Fuhua, Lin, HaiQing, Xu, Hongqi, Chang, Kai. Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures. 2D MATERIALS[J]. 2015, 第 1 作者 通讯作者 2(4): http://ir.semi.ac.cn/handle/172111/26942.
[36] LIJian, ZHANGDong. Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots. Chinese Physics Letters[J]. 2015, 第 2 作者32(4): 47303-047303, https://cpl.iphy.ac.cn/10.1088/0256-307X/32/4/047303.
[37] Zhang, Rui, Zhou, X Y, Zhang, D, Lou, W K, Zhai, F, Chang, Kai. Electronic and magneto-optical properties of monolayer phosphorene quantum dots. 2D MATERIALS[J]. 2015, 2(4): http://ir.semi.ac.cn/handle/172111/26943.
[38] Li, YunMei, Li, Jian, Shi, LiKun, Zhang, Dong, Yang, Wen, Chang, Kai. Light-Induced Exciton Spin Hall Effect in van der Waals Heterostructures. PHYSICAL REVIEW LETTERS[J]. 2015, 第 4 作者115(16): http://dx.doi.org/10.1103/PhysRevLett.115.166804.
[39] Li, J, Zhong, Y L, Zhang, Dong. Excitons in monolayer transition metal dichalcogenides. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2015, 第 3 作者27(31): http://dx.doi.org/10.1088/0953-8984/27/31/315301.
[40] 李健, 张东. Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots. 中国物理快报(英文版)[J]. 2015, 第 2 作者101-104, http://lib.cqvip.com/Qikan/Article/Detail?id=664401638.
[41] 张东. Electronic structures of carbon-based Kagomé lattices. Chinese Physics Letters. 2014, 第 1 作者 通讯作者
[42] Li, Jian, Lou, WenKai, Zhang, Dong, Li, XiaoJing, Yang, Wen, Chang, Kai. Single- and few-electron states in topological-insulator quantum dots. PHYSICAL REVIEW B[J]. 2014, 第 3 作者90(11): http://ir.semi.ac.cn/handle/172111/26181.
[43] Zhang Dong, Lin LiangZhong, Zhu JiaJi. Electronic Structures of Carbon-Based Kagome Lattices. CHINESE PHYSICS LETTERS[J]. 2014, 第 1 作者 通讯作者 31(2): http://ir.semi.ac.cn/handle/172111/26029.
[44] Zhang, Dong, Lou, Wenkai, Miao, Maosheng, Zhang, Shoucheng, Chang, Kai. Interface-Induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells. PHYSICAL REVIEW LETTERS[J]. 2013, 第 1 作者111(15): http://dx.doi.org/10.1103/PhysRevLett.111.156402.
[2] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[3] Zhan, Guohui, Yang, Zhilong, Luo, Kun, Zhang, Dong, Lou, Wenkai, Liu, Jiangtao, Wu, Zhenhua, Chang, Kai. Spin-dependent tunneling in 2D MnBi2Te4-based magnetic tunnel junctions. MRS BULLETIN[J]. 2022, 第 4 作者47(12): 1177-1184, http://dx.doi.org/10.1557/s43577-022-00381-8.
[4] LiangZhongLin, YiYunLing, DongZhang, ZhenHuaWu. Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface. Chinese Physics B[J]. 2022, 第 3 作者31(11): 117201, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ac7a0f.
[5] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[6] Lin, Liangzhong, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-polarized charge transport through a single barrier in HgTe/CdTe heterostructure interface. SOLID STATE COMMUNICATIONS[J]. 2022, 第 3 作者350: http://dx.doi.org/10.1016/j.ssc.2022.114772.
[7] Shi, Likun, Zhang, Dong, Chang, Kai, Song, Justin C W. Geometric Photon-Drag Effect and Nonlinear Shift Current in Centrosymmetric Crystals. PHYSICAL REVIEW LETTERS[J]. 2021, 第 2 作者126(19): http://dx.doi.org/10.1103/PhysRevLett.126.197402.
[8] Lin, Liangzhong, Liu, Yanfei, Yu, Jiahan, Zhu, Jiaji, Zhang, Dong, Wu, Zhenhua. Spin-flip manipulation in HgTe/CdTe heterostructure interface states with Rashba and Dresselhuas spin-orbit interactions. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2021, 第 5 作者125: http://dx.doi.org/10.1016/j.physe.2020.114427.
[9] YingdaChen, DongZhang, KaiChang. Exciton Vortices in Two-Dimensional Hybrid Perovskite Monolayers. Chinese Physics Letters[J]. 2020, 第 2 作者 通讯作者 37(11): 117102-117102, https://cpl.iphy.ac.cn/10.1088/0256-307X/37/11/117102.
[10] Boras, Giorgos, Yu, Xuezhe, Fonseka, H Aruni, Zhang, Dong, Zeng, Haotian, Sanchez, Ana M, Liu, Huiyun. Checked patterned elemental distribution in AlGaAs nanowire branches via vapor-liquid-solid growth. NANOSCALE[J]. 2020, 第 4 作者12(29): 15711-15720, http://dx.doi.org/10.1039/d0nr02577a.
[11] Lin, Liangzhong, Pu, Qingmin, Shi, Zhiqiang, Li, Xiaojing, Zhang, Dong, Zhu, Jiaji, Wu, Zhenhua. Spin filtering in a HgTe topological insulator PN junction via Rashba spin-orbit interaction. SOLID STATE COMMUNICATIONS[J]. 2020, 第 5 作者313: http://dx.doi.org/10.1016/j.ssc.2020.113906.
[12] Hu, Ce, Zhang, Dong, Yan, Faguang, Li, Yucai, Lv, Quanshan, Zhu, Wenkai, Wei, Zhongming, Chang, Kai, Wang, Kaiyou. From two- to multi -state vertical spin valves without spacer layer based on Fe 3 GeTe 2 van der Waals homo-junctions. SCIENCE BULLETIN[J]. 2020, 第 2 作者65(13): 1072-1077, http://dx.doi.org/10.1016/j.scib.2020.03.035.
[13] Do, T Thu Ha, del Aguila, Andres Granados, Zhang, Dong, Xing, Jun, Liu, Sheng, Prosnikov, M A, Gao, Weibo, Chang, Kai, Christianen, Peter C M, Xiong, Qihua. Bright Exciton Fine-Structure in Two-Dimensional Lead Halide Perovskites. NANO LETTERS[J]. 2020, 第 3 作者20(7): 5141-5148, http://dx.doi.org/10.1021/acs.nanolett.0c01364.
[14] Zhang, Dong, Xiong, Qihua, Chang, Kai. B5N5 monolayer: a room-temperature light element antiferromagnetic insulator. NANOSCALE ADVANCES[J]. 2020, 第 1 作者 通讯作者 2(10): 4421-4426, http://dx.doi.org/10.1039/d0na00270d.
[15] Zhou, Ma, Yu, Shengbin, Yang, Wen, Lou, Wenkai, Cheng, Fang, Zhang, Dong, Chang, Kai. Current-induced spin polarization in monolayer InSe. PHYSICAL REVIEW B[J]. 2019, 第 6 作者100(24): http://dx.doi.org/10.1103/PhysRevB.100.245409.
[16] 张东, 娄文凯, 常凯. 半导体极性界面电子结构的理论研究. 物理学报[J]. 2019, 第 1 作者68(16): 216-224, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.68.20191239.
[17] Zhou, Ma, Zhang, Dong, Yu, Shengbin, Huang, Zhihan, Chen, Yingda, Yang, Wen, Chang, Kai. Spin-charge conversion in InSe bilayers. PHYSICAL REVIEW B[J]. 2019, 第 2 作者99(15): http://dx.doi.org/10.1103/PhysRevB.99.155402.
[18] Yao, Bo, Zhang, Dong, Zhang, Ji, Wei, Shanshan, Lin, Xuechun, Mao, Qinghe. Narrow-bandwidth actively Q-switched all-fiber laser by suppressing ASE gain self-saturation. OPTICS EXPRESS[J]. 2019, 第 2 作者27(19): 27345-27353, http://dx.doi.org/10.1364/OE.27.027345.
[19] Zhang, Rui, Wei, Bin, Zhang, Dong, Zhu, JiaJi, Chang, Kai. Few-shot machine learning in the three-dimensional Ising model. PHYSICAL REVIEW B[J]. 2019, 第 3 作者99(9): http://dx.doi.org/10.1103/PhysRevB.99.094427.
[20] Huang, Zhihan, Zhang, Dong. Bandgap engineering of PbTe ultra-thin layers by surface passivations. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2019, 第 2 作者31(29): http://dx.doi.org/10.1088/1361-648X/ab14ac.
[21] Zhang Dong, Lou WenKai, Chang Kai. Theoretical progress of polarized interfaces in semiconductors. ACTA PHYSICA SINICA[J]. 2019, 第 1 作者68(16):
[22] Shan, Hangyong, Yu, Ying, Zhang, Rui, Cheng, Runtan, Zhang, Dong, Luo, Yang, Wang, Xingli, Li, Bowen, Zu, Shuai, Lin, Feng, Liu, Zheng, Chang, Kai, Fang, Zheyu. Electron transfer and cascade relaxation dynamics of graphene quantum dots/MoS2 monolayer mixed-dimensional van der Waals heterostructures. MATERIALS TODAY[J]. 2019, 第 5 作者24: 10-16, http://dx.doi.org/10.1016/j.mattod.2019.01.015.
[23] Tian, Nan, Yang, Yanhan, Liu, Danmin, Liu, Xuelu, Tan, PingHeng, Zhang, Dong, Chang, Kai, Li, Hui, Zhao, Minjian, Li, Jian Rong, Tang, Xu, Zhang, Dandan, Zhang, Zhenlu, Xiao, Weiqiang, Yan, Hui, Zhang, Yongzhe. High Anisotropy in Tubular Layered Exfoliated KP15. ACS NANO[J]. 2018, 第 6 作者12(2): 1712-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000426615600082.
[24] Yang, Yanhan, Tian, Nan, Zhang, Yongzhe, Liu, Danmin, Zhang, Dong, Chang, Kai, Yan, Hui. Rediscovering the MP15 Family (M = Li, Na, and K) as an Anisotropic Layered Semiconducting Material. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2018, 第 5 作者9(4): 732-738, https://www.webofscience.com/wos/woscc/full-record/WOS:000425569300009.
[25] Sun Jianpeng, Zhang Dong, Chang Kai. Molybdenum Carbide: A Stable Topological Semimetal with Line Nodes and Triply Degenerate Points. 中国物理快报：英文版[J]. 2017, 第 2 作者34(2): 027102_01-027102_05, http://lib.cqvip.com/Qikan/Article/Detail?id=671579774.
[26] JianPengSun, DongZhang, KaiChang. Molybdenum Carbide: A Stable Topological Semimetal with Line Nodes and Triply Degenerate Points. Chinese Physics Letters[J]. 2017, 第 2 作者 通讯作者 34(2): 27102-027102, https://cpl.iphy.ac.cn/10.1088/0256-307X/34/2/027102.
[27] Li, Jian, Zhang, Dong, Zhu, JiaJi. Electronic structure of rectangular HgTe quantum dots. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES[J]. 2017, 第 2 作者93: 58-62, http://dx.doi.org/10.1016/j.physe.2017.05.010.
[28] Zhou, Ma, Zhang, Rui, Sun, Jiangpeng, Lou, WenKai, Zhang, Dong, Yang, Wen, Chang, Kai. Multiband k . p theory of monolayer XSe (X=In, Ga). PHYSICAL REVIEW B[J]. 2017, 第 5 作者96(15): http://dx.doi.org/10.1103/PhysRevB.96.155430.
[29] Zhou, Xiaoying, Lou, WenKai, Zhang, Dong, Cheng, Fang, Zhou, Guanghui, Chang, Kai. Effective g factor in black phosphorus thin films. PHYSICALREVIEW B[J]. 2017, 第 3 作者95(4): 045408, http://dx.doi.org/10.1103/PhysRevB.95.045408.
[30] Sun, JianPeng, Zhang, Dong, Chang, Kai. Coexistence of topological nodal lines, Weyl points, and triply degenerate points in TaS. PHYSICAL REVIEW B[J]. 2017, 第 2 作者 通讯作者 96(4): http://dx.doi.org/10.1103/PhysRevB.96.045121.
[31] Yan, Faguang, Zhao, Lixia, Patane, Amalia, Hu, PingAn, Wei, Xia, Luo, Wengang, Zhang, Dong, Lv, Quanshan, Feng, Qi, Shen, Chao, Chang, Kai, Eaves, Laurence, Wang, Kaiyou. Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures. NANOTECHNOLOGY[J]. 2017, 第 7 作者28(27): http://dx.doi.org/10.1088/1361-6528/aa749e.
[32] Li, YunMei, Zhou, Xiaoying, Zhang, YanYang, Zhang, Dong, Chang, Kai. Dirac fermions and pseudomagnetic fields in two-dimensional electron gases with triangular antidot lattices. PHYSICAL REVIEW B[J]. 2017, 第 4 作者96(3): http://dx.doi.org/10.1103/PhysRevB.96.035406.
[33] Jian Li, Dong Zhang, Jia-Ji Zhu. Electronic structure of rectangular HgTe quantum dots. PHYSICA E[J]. 2017, 第 2 作者93: 58–62, http://ir.semi.ac.cn/handle/172111/28407.
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科研活动
科研项目
（ 1 ） 低维固态极性结构中量子态调控及其原型器件研究, 参与, 国家任务, 2017-07--2022-06
（ 2 ） 新奇二维材料原型器件研究(中国-比利时政府间合作), 参与, 国家任务, 2016-10--2018-09
（ 3 ） 界面调控常规半导体拓扑绝缘体相变, 负责人, 国家任务, 2016-01--2018-12
（ 4 ） 新型二维异质结结构中电子自旋特性的调控, 参与, 国家任务, 2015-01--2019-12
（ 2 ） 新奇二维材料原型器件研究(中国-比利时政府间合作), 参与, 国家任务, 2016-10--2018-09
（ 3 ） 界面调控常规半导体拓扑绝缘体相变, 负责人, 国家任务, 2016-01--2018-12
（ 4 ） 新型二维异质结结构中电子自旋特性的调控, 参与, 国家任务, 2015-01--2019-12