Hello everyone, I am Dr. Lin. I have graduated from Liverpool John Moores University UK since 2012 with PhD degree on advanced CMOS devices characterization technique . After I came back to China at 2014, I've joined the Institute of Microelectronics Chinese Academy of Sciences (IME). Within the last 8 years, my work is mainly focused on vacuum gauge research & development.
Research Areas
Education
2007-2012 Liverpool John Moores University
PhD of Development of Characterizationg Techniques for Negative Bias Terperature Instabilities
2001-2004 Liverpool John Moores University
Master of Micorelectronic system design
2000-2001 University of Central Lancashire
Electronics Engineering
1998-2000 Beijing Institute of Technology
Electronics Engineering
Experience
2014- recent
Institute of Microelectronics Chinese Academy of Sciences, Associate Research Fellow
2007-2012
Global Accent Ltd & LanguageLine Solutions, Senior Medical Interpret
2004-2005
Arvato (3G), Junior Medical Interpret
Publications
Papers
1. J. F. Zhang, M. H. Chang, Z. Ji, L. Lin（林琳）, I. Ferain, G. Groeseneken, L. Pantisano, S. De Gendt, and M. M. Heyns
“Dominant layer for stress-induced positive charges in Hf-based gate stacks”
IEEE Electron Device Letters, vol. 29, pp.1360-1363, 2008.
2. Z. Ji, L. Lin and J. Zhang
“Impact of sensing gate bias on NBTI of Hf-based dielectric stacks”
ECS transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10, Vol. 19, No.2, pp.351-362, 2009.
3. J. F. Zhang, Z. Ji, L. Lin, and W. Zhang (Invited)
“Effective threshold voltage shift: a measure for NBTI removing uncertainty in mobility Degradation”
Proc. of IEEE 10th International Conference on Solid-State and Integrated-Circuit Technology, pp.1600-1603, 2010.
4. Z. Ji, L. Lin, J. F. Zhang, B. Kaczer, and G. Groeseneken
“NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse
measurement”
IEEE Trans. Electron Dev., vol. 57, No.1, pp. 228-237, 2010.
5. L. Lin, Z. Ji, J. F. Zhang, W. D. Zhang, B. Kaczer, S. De Gendt, and G. Groeseneken
“A single pulse charge pumping technique for fast measurements of interface states”
IEEE Trans. Electron Dev., vol. 58, No.5, pp. 1490-1498, 2011.
6. L. Lin, Z. Ji, J. F. Zhang and W. D. Zhang
“Development of a fast technique for characterizing interface states”
ECS transactions on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11, Vol. 35, No.4, pp.81-93, 2011.
7. J. F. Zhang, Z. Ji, W. Zhang, L. Lin, B. Kaczer, S. De Gendt, and G. Groeseneken (Invited)
“Advanced characterization techniques for MOS devices”