基本信息

丛慧  女    中国科学院半导体研究所
电子邮件: conghui@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:100083

研究领域

研究方向针对高性能硅基光电芯片的关键技术问题,开展基于IV族锗、锗锡合金以及其他新型硅基异质材料生长和光电器件制备的研究工作。研究内容主要围绕红外探测器、波长转换器、红外光源三种芯片关键部分展开:(1)硅基红外光电探测器,基于CMOS工艺制备了针对通讯领域的波导耦合型Ge/Si 雪崩倍增光电探测器,器件增益带宽积达到同期领先水平325GHz;基于硅基锗材料制备出320×256的全IV族焦平面成像阵列;国际上率先提出利用钙钛矿/GeSn异质结结构制备宽光谱探测器,首次实现探测范围覆盖紫外到短波红外(450 nm - 2200 nm)的宽光谱探测器以及基于异质结结构的20×20 宽光谱成像阵列。(2)硅基波长转换器件,通过生长组分优化的硅基AlGaAs、氮化硅材料,避免C波段内的非线性吸收效应,基于四波混频原理实现带宽190 nm、泵浦功率7 dBm的高效率波长转换。(3)硅基短波红外光源,国际上首次利用石墨烯作为透明电极制备全IV族硅基GeSn/Ge多量子阱短波红外发光器件,该器件室温下电注入发光中心波长位于近红外2050 nm。


招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
硅基IV族光电子材料与器件

教育背景

2012-09--2017-06   中国科学院大学   博士学位
2008-09--2012-06   吉林大学   学士学位

工作经历

   
工作简历
2022-09~现在, 中国科学院半导体研究所, 副研究员
2021-01~2022-09,中国科学院半导体研究所, 助理研究员
2017-08~2020-12,中国科学院物理研究所, 博士后

专利与奖励

   
专利成果
[1] 薛春来, 徐国印, 丛慧, 徐驰. 一种红外焦平面阵列及其制备方法. 2021113175 45.1, 2021-11-08.
[2] 薛春来, 王啸宇, 丛慧, 徐驰, 万丰硕, 徐国印, 谢长江. 光探测器及其制备方法. CN202111239248.X, 2021-10-25.
[3] 王霆, 张建军, 丛慧, 冯琦. 一种悬浮波导结构及其制备方法. CN: CN112180504A, 2021-01-05.
[4] 王霆, 丛慧, 冯琦, 张建军. 一种悬浮脊形波导结构及其制备方法. CN: CN112162349A, 2021-01-01.

出版信息

   
发表论文
[1] Xu, Guoyin, Cong, Hui, Wan, Fengshuo, Wang, Xiaoyu, Xie, Changjiang, Xu, Chi, Xue, Chunlai. Si-Based Ge 320 x 256 Focal Plane Array for Short-Wave Infrared Imaging. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2022, 第 2 作者  通讯作者  34(10): 517-520, http://dx.doi.org/10.1109/LPT.2022.3168308.
[2] Cong, Hui, Yang, Bo, Wei, Wenqi, Wang, Jianhuan, Feng, Qi, Wang, Zihao, Wang, Ting, Guo, Xuhan, Zhang, Jianjun. Suspended AlGaAs waveguide for integrated nonlinear photonics. APPLIED PHYSICS LETTERS[J]. 2021, 第 1 作者119(13): http://dx.doi.org/10.1063/5.0063630.
[3] Cong, Hui, Chu, Xinbo, Wan, Fengshuo, Chu, Zema, Wang, Xiaoyu, Ma, Yao, Jiang, Jizhong, Shen, Liang, You, Jingbi, Xue, Chunlai. Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction. SMALL METHODS[J]. 2021, 第 1 作者5(8): http://dx.doi.org/10.1002/smtd.202100517.
[4] Cong, Hui, Feng, Qi, Zhang, Jieyin, Wang, Jianhuan, Wei, Wenqi, Wang, Ting, Zhang, Jianjun. Kerr nonlinearity induced four-wave mixing of CMOS-compatible PECVD deposited ultra-Si-rich-nitride. JOURNAL OF APPLIED PHYSICS[J]. 2020, 第 1 作者128(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000551876400002.
[5] Yang, Fan, Yu, Kai, Cong, Hui, Xue, Chunlai, Cheng, Buwen, Wang, Nan, Zhou, Lin, Liu, Zhi, Wang, Qiming. Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector. ACS PHOTONICS[J]. 2019, 第 3 作者6(5): 1199-1206, http://dx.doi.org/10.1021/acsphotonics.8b01731.
[6] Hu, Wei, Cong, Hui, Huang, Wei, Huang, Yu, Chen, Lijuan, Pan, Anlian, Xue, Chunlai. Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band. LIGHT-SCIENCE & APPLICATIONS[J]. 2019, 第 2 作者8(1): 
[7] Duan, Lianfeng, Zhao, Lijuan, Cong, Hui, Zhang, Xueyu, Lue, Wei, Xue, Chunlai. Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries. SMALL[J]. 2019, 第 3 作者15(7): 
[8] Cong, Hui, Yang, Fan, Xue, Chunlai, Yu, Kai, Zhou, Lin, Wang, Nan, Cheng, Buwen, Wang, Qiming. Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source. SMALL[J]. 2018, 第 1 作者14(17): 
[9] Yu, Kai, Yang, Fan, Cong, Hui, Zhou, Lin, Liu, Qingyun, Zhang, Lichun, Cheng, Buwen, Xue, Chunlai, Zuo, Yuhua, Li, Chuanbo. Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2018, 第 3 作者750: 182-188, http://dx.doi.org/10.1016/j.jallcom.2018.02.178.
[10] JUN ZHENG, SUYUAN WANG, HUI CONG, COLLEEN S. FENRICH, ZHI LIU, CHUNLAI XUE, CHUANBO LI, YUHUA ZUO, BUWEN CHENG, JAMES S. HARRIS, AND QIMING WANG. Characterization of a Ge1−x−ySiySnx/Ge1−xSnx multiple quantum well structure grown by sputtering epitaxy. LETTER[J]. 2017, 第 3 作者42(8): 1608-1611, http://ir.semi.ac.cn/handle/172111/28736.
[11] Zhou, Lin, Yu, Kai, Yang, Fan, Cong, Hui, Wang, Nan, Zheng, Jun, Zuo, Yuhua, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2017, 第 4 作者5(25): 6224-6233, http://ir.semi.ac.cn/handle/172111/28737.
[12] Yang, Fan, Cong, Hui, Yu, Kai, Zhou, Lin, Wang, Nan, Liu, Zhi, Li, Chuanbo, Wang, Quming, Cheng, Buwen. Ultrathin Broadband Germanium-Graphene Hybrid Photodetector with High Performance. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 第 2 作者9(15): 13422-13429, https://www.webofscience.com/wos/woscc/full-record/WOS:000399965700057.
[13] Zheng, Jun, Wang, Suyuan, Cong, Hui, Fenrich, Colleen S, Liu, Zhi, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Harris, James S, Wang, Qiming. Characterization of a Ge1-x-ySiySnx/Ge1-xSnx multiple quantum well structure grown by sputtering epitaxy. OPTICS LETTERS[J]. 2017, 第 3 作者42(8): 1608-1611, https://www.webofscience.com/wos/woscc/full-record/WOS:000399329600036.
[14] Fan Yang, Hui Cong, Kai Yu, Lin Zhou, Nan Wang, Zhi Liu, Chuanbo Li, Qiming Wang, Buwen Cheng. Ultrathin Broadband Germanium−Graphene Hybrid Photodetector with High Performance. ACS APPLIED MATERIALS & INTERFACES RESEARCH[J]. 2017, 第 2 作者9: 13422−13429, http://ir.semi.ac.cn/handle/172111/28696.
[15] Li, Chong, Xue, ChunLai, Liu, Zhi, Cong, Hui, Cheng, Buwen, Hu, Zonghai, Guo, Xia, Liu, Wuming. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate. SCIENTIFIC REPORTS[J]. 2016, 第 4 作者6: http://dx.doi.org/10.1038/srep27743.
[16] Liu, Zhi, Cong, Hui, Yang, Fan, Li, Chuanbo, Zheng, Jun, Xue, Chunlai, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. Defect-free high Sn-content GeSn on insulator grown by rapid melting growth. SCIENTIFIC REPORTS[J]. 2016, 第 2 作者6: http://ir.semi.ac.cn/handle/172111/27833.
[17] Zheng, Jun, Wang, Suyuan, Liu, Zhi, Cong, Hui, Xue, Chunlai, Li, Chuanbo, Zuo, Yuhua, Cheng, Buwen, Wang, Qiming. GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy. APPLIED PHYSICS LETTERS[J]. 2016, 第 4 作者108(3): http://ir.semi.ac.cn/handle/172111/28061.
[18] Cong, Hui, Xue, Chunlai, Liu, Zhi, Li, Chuanbo, Cheng, Buwen, Wang, Qiming. High-speed waveguide-integrated Ge/Si avalanche photodetector. CHINESE PHYSICS B[J]. 2016, 第 1 作者25(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000375681800078.
[19] Cong, Hui, Xue, Chunlai, Zheng, Jun, Yang, Fan, Yu, Kai, Liu, Zhi, Zhang, Xu, Cheng, Buwen, Wang, Qiming. Silicon Based GeSn p-i-n Photodetector for SWIR Detection. IEEE PHOTONICS JOURNAL[J]. 2016, 第 1 作者8(5): http://ir.semi.ac.cn/handle/172111/27813.
[20] Zhang DongLiang, Cheng BuWen, Xue ChunLai, Zhang Xu, Cong Hui, Liu Zhi, Zhang GuangZe, Wang QiMing. Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser. CHINESE PHYSICS B[J]. 2015, 第 5 作者24(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000350829700031.
[21] Zhang Dongliang, Cheng Buwen, Xue Chunlai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guangze, Wang Qiming. Theoretical study on optical gain characteristics of Ge_(1-x)Sn_x alloy for short-wave infrared laser. CHINESE PHYSICS. B[J]. 2015, 第 5 作者24(2): 024211-1, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5333585&detailType=1.
[22] Li, Chong, Xue, ChunLai, Liu, Zhi, Cong, Hui, Guo, Xia, Cheng, Buwen, LeVan, PD, Sood, AK, Wijewarnasuriya, P, DSouza, AI. High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector. INFRARED SENSORS, DEVICES, AND APPLICATIONS V. 2015, 第 4 作者9609: 

科研活动

   
科研项目
( 1 ) 基于石墨烯电极的硅基锗锡合金激光器基础研究, 负责人, 国家任务, 2019-01--2021-12
( 2 ) 面向单片集成的GeSn合金红外光电探测技术研究, 负责人, 国家任务, 2023-01--2026-12
( 3 ) 面向高性能计算应用的超高带宽光收发芯片及模块, 参与, 国家任务, 2022-07--2025-06
( 4 ) 后摩尔时代硅基异质材料及调控机理, 参与, 中国科学院计划, 2022-07--2027-06