发表论文
(1) Study of strain evolution mechanism in Ge1_xSnx materials grown by low temperature molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2022, 通讯作者(2) Si-Based Ge 320 ✕ 256 Focal Plane Array for Short-Wave Infrared Imaging, IEEE PHOTONICS TECHNOLOGY LETTERS, 2022, 第 6 作者(3) Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1-ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8, ACS APPLIED ELECTRONIC MATERIALS, 2021, 第 2 作者(4) Gas source molecular epitaxy of Ge1-ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 第 1 作者(5) Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties, Applied Physics Letters, 2019, 通讯作者(6) Doping dependence of the optical dielectric function in n-type germanium, JOURNAL OF APPLIED PHYSICS, 2019, 通讯作者(7) Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents, CHEMISTRY OF MATERIALS, 2019, 通讯作者(8) Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries, ACS APPLIED MATERIALS & INTERFACES, 2018, 通讯作者(9) Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases, JOURNAL OF APPLIED PHYSICS, 2017, 第 1 作者(10) Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n-Type Ge, PHYSICAL REVIEW LETTERS, 2017, 通讯作者(11) Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane, ACS APPLIED MATERIALS & INTERFACES, 2016, 通讯作者(12) Experimental doping dependence of the lattice parameter in n-type Ge: Identifying the correct theoretical framework by comparison with Si, PHYSICAL REVIEW B, 2016, 通讯作者(13) Optical properties of Ge-rich Ge1-xSix alloys: Compositional dependence of the lowest direct and indirect gaps, PHYSICAL REVIEW B, 2016, 通讯作者(14) Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 通讯作者(15) In situ low temperature As-doping of Ge films using As(SiH3)(3) and As(GeH3)(3): fundamental properties and device prototypes, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 通讯作者(16) Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys, SOLID-STATE ELECTRONICS, 2015, 第 1 作者(17) Frustrated incomplete donor ionization in ultra-low resistivity germanium films, APPLIED PHYSICS LETTERS, 2014, 通讯作者(18) Synthesis and optical properties of Sn-rich Ge1 – x – ySixSny materials and devices, THIN SOLID FILMS, 2014, 第 1 作者(19) Optical properties of Ge1-x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm, APPLIED PHYSICS LETTERS, 2013, 通讯作者(20) New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 通讯作者(21) Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si-Ge-Sn, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 第 1 作者