Overlapping fields of nitrides and two-dimensional materials & optoelectronic devices

2014.09-2019.06, Jilin University, PhD

2010.09-2014.06, Jilin University, Bachelor

   

2022.09 to now, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Associate Professor

2019.07-2022.09, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Assistant Professor

   

1. Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure, Optics Letters, 2023, 48, 3175-3178. Corresponding Author

2. Wafer-Scale Fabrication of Graphene-Based Plasmonic Photodetector with Polarization-Sensitive, Broadband, and Enhanced Response, Advanced Optical Materials, 2023, 11, 2202860. Corresponding Author

3. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial  Adhesion Control for a Flexible Photosensitive Device, ACS Applied Materials & Interfaces, 2023, 15, 31954-31965. First Author

4. AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy, Crystal Growth & Design, 2023, 23,1162-1171. First Author
5. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation, ACS Applied Materials & Interfaces, 2022, 14, 37947-37957. First Author
6. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation, Advanced Electronic Materials, 2022, 8, 2100759. First Author

7. Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector, Carbon, 2021, 175, 155-163. First Author

8. A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene, Journal of Alloys and Compounds, 2021, 868, 159281. First Author
9. Van der Waals Epitaxy: A new way for growth of III-nitrides, Science China-Technological Sciences, 2020, 63, 528-530. First Author

10. Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy, Applied Physics Letters, 2020, 117, 051601. First Author
11. Thermally-induced wrinkles on PH1000/graphene composite electrode for enhanced efficiency of organic solar cells, Solar Energy Materials and Solar Cells, 2019, 201, 110075. First Author
12. Graphene as a Transparent and Conductive Electrode for Organic Optoelectronic Devices, Advanced Electronic Materials, 2019, 5, 1900247. First Author
13. Flexible and transparent supercapacitor based on ultrathin Au/graphene composite electrodes, Applied Surface Science, 2019, 467, 104-111. First Author
14. Microscale-Patterned Graphene Electrodes for Organic Light-Emitting Devices by a Simple Patterning Strategy, Advanced Optical Materials, 2018, 6, 1701348.  First Author

15. A two-step thermal annealing and HNO₃ doping treatment for graphene electrode and its application in small-molecule organic solar cells, Organic Electronics, 2016, 38, 35-41. First Author

1. China Patent, 2022, 1st, No. CN 202211646649.1

2. China Patent, 2021, 1st, No. CN 112786751A 

3. China Patent, 2021, 1st, No. CN 112242469A

4. China Patent, 2021, 1st, No. CN 202011610434.5

5. China Patent, 2022, 2nd, No. CN202210241364.3

6. China Patent, 2022, 2nd, No. CN 113948543A

7. China Patent, 2020, 2nd, No.CN112103305A

Nitride materials; Two-dimensional materials; Optoelectronic devices