基本信息
毕津顺  男  硕导  中国科学院微电子研究所
电子邮件: bijinshun@ime.ac.cn
通信地址: 北京市朝阳区北土城西路3号
邮政编码: 100029

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
集成电路工程

教育背景

2017-08--2017-11   法国应用科学院   访问学者
2003-09--2008-06   中国科学院微电子研究所   博士学位
1999-09--2003-06   南开大学   学士学位

工作经历

   
工作简历
2017-11~现在, 中国科学院微电子研究所, 研究员
2017-05~2017-08,中国科学院微电子研究所, 研究员
2013-09~2017-04,中国科学院微电子研究所, 副研究员
2012-05~2013-08,美国范德堡大学, 访问学者
2008-06~2012-05,中国科学院微电子研究所, 助理研究员/副研究员
社会兼职
2017-02-21-2022-06-30,University of Saskatchewan兼职教授,
2014-01-01-今,中国科学院青年创新促进会成员,
2013-10-19-今,2013年北京地区微电子博士生论坛技术委员会委员,
2012-10-01-今,IEEE Member,
2012-04-01-今,国家自然基金项目评议专家,

教授课程

TCAD仿真技术

专利与奖励

   
专利成果
[1] 呼红阳, 毕津顺, 习凯. 离子敏感场效应晶体管及其制备方法. CN: CN109211897B, 2021-03-30.

[2] 范林杰, 毕津顺, 习凯, 刘明. 一种霍尔传感器及其制备和测试方法. CN: CN112540329A, 2021-03-23.

[3] 范林杰, 毕津顺, 习凯, 刘明. 一种磁场探测方法及装置. CN: CN112420917A, 2021-02-26.

[4] 戴茜茜, 毕津顺, 李梅, 刘明, 李博, 习凯. 一种闪存存储电路的抗总剂量效应加固方法. CN: CN109119110B, 2021-02-23.

[5] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置芯片、系统和方法. CN: CN107704285B, 2021-01-05.

[6] 颜刚平, 许高博, 毕津顺, 习凯, 李博, 殷华湘, 王文武. 一种绝缘体上半导体结构及其抗总剂量辐照加固方法. CN: CN112086516A, 2020-12-15.

[7] 杨雪琴, 毕津顺, 李博, 习凯, 季兰龙, 刘明. 一种基于RRAM的非易失性锁存器及集成电路. CN: CN111048131A, 2020-04-21.

[8] 徐彦楠, 毕津顺, 习凯, 季兰龙, 刘明. 改良的电荷俘获型存储器. CN: CN110783343A, 2020-02-11.

[9] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路及方法. 中国: CN108319465A, 2018-07-24.

[10] 陶桂龙, 许高博, 毕津顺, 徐秋霞. 一种遂穿场效应晶体管及其制造方法. 中国: CN108321197A, 2018-07-24.

[11] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置的芯片及系统. 中国: CN207264382U, 2018-04-20.

[12] 谢元禄, 张坤, 孙海涛, 刘璟, 毕津顺, 刘明. 一种对可编程逻辑器件进行配置或更新的装置和方法. 中国: CN106445544A, 2017-02-22.

[13] 陈珊, 毕津顺, 王艳, 刘明. 应用于辐照试验的芯片封装结构及其制作方法. 中国: CN106019128A, 2016-10-12.

[14] Bu Jianhui, Bi Jinshun, Luo Jiajun, Han Zhengsheng. METHOD FOR DETERMINING PN JUNCTION DEPTH. 美国: US2015177312(A1), 2015.06.25.

[15] 吕荫学, 毕津顺, 罗家俊, 韩郑生, 叶甜春. 一种改进SOI结构抗辐照性能的方法. 中国: CN102522362B, 2015.06.24.

[16] 解冰清, 李博, 毕津顺, 罗家俊, 卜建辉. 一种直流-交流逆变器的控制方法. 中国: CN105099254A, 2015-11-25.

[17] Lv, Yinxue, Bi, Jinshun, Luo, Jiajun, Han, Zhengsheng, Ye, Tianchun. Method for improving anti-radiation performance of SOI structure. US: US9111995(B2), 2015-08-18.

[18] Bu, Jianhui, Bi, Jinshun, Luo, Jiajun, Han, Zhengsheng. METHOD FOR DETERMINING PN JUNCTION DEPTH. CN: US20150177312(A1), 2015-06-25.

[19] Bi Jinshun, Luo Jiajun, Han Zhengsheng. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME. 美国: US2015170915(A1), 2015-06-18.

[20] 李博, 毕津顺, 刘海南, 韩郑生, 罗家俊, 刘刚. 用于开关电源数字控制器的数字脉冲宽度调制装置. 中国: CN104485933A, 2015-04-01.

[21] 李博, 毕津顺, 刘海南, 韩郑生, 罗家俊, 刘刚. 降压直流-直流转换器的控制方法. 中国: CN104362850A, 2015-02-18.

[22] 宿晓慧, 罗家俊, 郝乐, 毕津顺, 李欣欣, 赵海涛. 一种单粒子瞬态脉冲信号幅度测量电路. 中国: CN103983834A, 2014.08.13.

[23] Lv Yinxue, Bi Jinshun, Luo Jiajun, Han Zhengsheng, Ye Tianchun. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME. 美国: US2014349463(A1), 2014-11-27.

[24] 李书振, 卜建辉, 毕津顺, 曾传滨, 罗家俊, 韩郑生. 一种SOI MOS器件闪烁噪声的测试设备及测试方法. 中国: CN103792438A, 2014-05-14.

[25] 宿晓慧, 毕津顺, 罗家俊, 韩郑生, 郝乐. 抗单粒子瞬态脉冲CMOS电路. 中国: CN103546146A, 2014-01-29.

[26] 宿晓慧, 毕津顺, 罗家俊, 韩郑生, 郝乐. 抗单粒子瞬态脉冲CMOS电路. 中国: CN103546145A, 2014-01-29.

[27] 卜建辉, 毕津顺, 罗家俊, 韩郑生. NMOS和PMOS器件结构及设计方法. 中国: CN103151385A, 2013.06.12.

[28] 宿晓慧, 毕津顺, 罗家俊, 韩郑生, 郝乐. 抗单粒子瞬态脉冲CMOS电路. 中国: CN103475355A, 2013-12-25.

[29] 宿晓慧, 毕津顺, 罗家俊, 韩郑生, 郝乐. 抗单粒子瞬态脉冲CMOS电路. 中国: CN103475359A, 2013-12-25.

[30] 卜建辉, 李莹, 毕津顺, 李书振, 罗家俊, 韩郑生. 一种SOI_MOSFET的热阻提取方法. 中国: CN103411997A, 2013-11-27.

[31] 宿晓慧, 毕津顺. 单粒子脉冲宽度测量电路. 中国: CN103063933A, 2013-04-24.

[32] 毕津顺, 海潮和, 韩郑生, 罗家俊. 场效应晶体管及其制备方法. 中国: CN103022084A, 2013-04-03.

[33] 卜建辉, 毕津顺, 罗家俊, 韩郑生. SOI H型栅MOS器件的建模方法. 中国: CN102982215A, 2013-03-20.

[34] 王一奇, 韩郑生, 赵发展, 刘梦新, 毕津顺. 存储单元测试电路及其测试方法. 中国: CN102903392A, 2013-01-30.

[35] 李莹, 毕津顺. MOS器件版图批量化设计方法. 中国: CN102831254A, 2012-12-19.

[36] 宿晓慧, 毕津顺. 单粒子瞬态脉冲宽度测量电路. 中国: CN102818939A, 2012-12-12.

[37] 卜建辉, 毕津顺, 罗家俊, 韩郑生. SOI MOS器件的建模方法. 中国: CN102789530A, 2012-11-21.

[38] 卜建辉, 毕津顺, 罗家俊, 韩郑生. 一种PN结结深测算方法. 中国: CN102738030A, 2012-10-17.

[39] 卜建辉, 毕津顺, 罗家俊, 韩郑生. MOS器件的建模方法. 中国: CN102708268A, 2012-10-03.

[40] 李莹, 毕津顺, 罗家俊, 韩郑生. SOI MOS晶体管. 中国: CN102683417A, 2012-09-19.

[41] 李莹, 毕津顺, 罗家俊, 韩郑生. SOI MOS晶体管. 中国: CN102683416A, 2012-09-19.

[42] 李莹, 毕津顺, 罗家俊, 韩郑生. SOI MOS晶体管. 中国: CN102664189A, 2012-09-12.

[43] 卜建辉, 毕津顺, 梅博, 罗家俊, 韩郑生. MOS器件的建模方法. 中国: CN102646147A, 2012-08-22.

[44] 毕津顺, 罗家俊, 韩郑生. 一种半导体结构的制造方法. 中国: CN102637592A, 2012-08-15.

[45] 曾传滨, 毕津顺, 李多力, 罗家俊, 韩郑生. 静电放电保护用可控硅结构. 中国: CN202384340U, 2012-08-15.

[46] 宿晓慧, 毕津顺, 罗家俊. 单粒子瞬态脉冲宽度测量电路. 中国: CN102621401A, 2012-08-01.

[47] 刘梦新, 毕津顺, 刘刚, 罗家俊, 韩郑生. 一种基于绝缘体上硅的射频LDMOS晶体管结构. 中国: CN102593170A, 2012-07-18.

[48] 梅博, 毕津顺, 韩郑生, 罗家俊. 单粒子瞬态电流脉冲检测系统. 中国: CN102565545A, 2012-07-11.

[49] 梅博, 毕津顺, 韩郑生, 罗家俊. 单粒子瞬态电流脉冲检测方法. 中国: CN102520260A, 2012-06-27.

[50] 曾传滨, 高林春, 毕津顺, 罗家俊, 韩郑生. 一种激光脉冲单粒子效应模拟系统. 中国: CN102495355A, 2012-06-13.

[51] 范紫菡, 毕津顺, 罗家俊. 对PDSOI器件单粒子翻转的仿真分析电路. 中国: CN102479270A, 2012-05-30.

[52] 吕荫学, 毕津顺, 罗家俊, 韩郑生, 叶甜春. 抗辐照加固的SOI结构及其制作方法. 中国: CN102437087A, 2012-05-02.

[53] 王一奇, 韩郑生, 赵发展, 刘梦新, 毕津顺. 一种MOS晶体管电容. 中国: CN102412312A, 2012-04-11.

[54] 卜建辉, 毕津顺, 韩郑生. 一种SOINMOS总剂量辐照建模方法. 中国: CN102375896A, 2012-03-14.

[55] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种绝缘体上硅场效应晶体管热阻提取方法. 中国: CN102353885A, 2012-02-15.

[56] 曾传滨, 毕津顺, 刘刚, 罗家俊, 韩郑生. 温控可充气真空辐射设备. 中国: CN102339655A, 2012-02-01.

[57] 曾传滨, 毕津顺, 李多力, 罗家俊, 韩郑生. 一种维持电压可调节的可控硅结构. 中国: CN102332467A, 2012-01-25.

[58] 刘梦新, 陈蕾, 毕津顺, 刘刚, 韩郑生. 基于SOI的射频LDMOS器件及对其进行注入的方法. 中国: CN102054845A, 2011.05.11.

[59] 李莹, 毕津顺, 罗家俊, 韩郑生. 一种模拟脉冲电流的方法以及装置. 中国: CN102298659A, 2011-12-28.

[60] 卜建辉, 毕津顺, 韩郑生. 一种SOI体电阻建模方法. 中国: CN102298655A, 2011-12-28.

[61] 卜建辉, 毕津顺, 韩郑生, 罗家俊. 一种电路辐照性能仿真方法及设备. 中国: CN102289546A, 2011-12-21.

[62] 梅博, 毕津顺, 韩郑生. 一种提高SOI-PMOS器件背栅阈值电压的方法. 中国: CN102270582A, 2011-12-07.

[63] 梅博, 毕津顺, 韩郑生. 一种调节SOI-NMOS器件背栅阈值电压的方法. 中国: CN102244008A, 2011-11-16.

[64] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种绝缘体上硅二极管器件及其制造方法. 中国: CN102244030A, 2011-11-16.

[65] 卜建辉, 毕津顺, 习林茂, 韩郑生. 一种预测绝缘体上硅器件热载流子寿命的方法. 中国: CN102236063A, 2011-11-09.

[66] 卜建辉, 毕津顺, 韩郑生. 一种对半导体器件进行总剂量辐照提参建模的方法. 中国: CN102214251A, 2011-10-12.

[67] 卜建辉, 毕津顺, 韩郑生. 一种对半导体器件进行提参建模的方法. 中国: CN102214252A, 2011-10-12.

[68] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种CMOS集成电路抗单粒子辐照加固电路. 中国: CN102117797A, 2011-07-06.

[69] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种CMOS集成电路抗辐照加固电路. 中国: CN102118152A, 2011-07-06.

[70] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种CMOS电路单粒子瞬态的建模方法. 中国: CN101964005A, 2011-02-02.

[71] 宋文斌, 毕津顺, 韩郑生. 一种制作部分耗尽SOI器件体接触结构的方法. 中国: CN101621009, 2010.01.06.

[72] 毕津顺, 海潮和, 韩郑生, 罗家俊. 晶体管测试装置及方法. 中国: CN101930051A, 2010-12-29.

[73] 毕津顺, 海潮和, 韩郑生. 用于表征硅与二氧化硅界面特性的光学系统及方法. 中国: CN101726496A, 2010-06-09.

[74] 毕津顺, 海潮和, 韩郑生, 罗家俊. 一种绝缘体上硅器件及其制备方法. 中国: CN101621064, 2010-01-06.

[75] 刘梦新, 毕津顺, 范雪梅, 赵超荣, 韩郑生, 刘 刚. 具有紧密体接触的射频SOI LDMOS器件. 中国: CN101515586, 2009-08-26.

[76] 刘梦新, 毕津顺, 范雪梅, 赵超荣, 韩郑生, 刘 刚. 具有H型栅的射频SOI LDMOS器件. 中国: CN101515588, 2009-08-26.

[77] 毕津顺, 海潮和. 一种制备低栅扩展电容绝缘体上硅体接触器件的方法. 中国: CN100481354, 2009-04-22.

[78] 海潮和, 毕津顺, 孙海峰, 韩郑生, 赵立新. 双栅全耗尽SOI CMOS器件及其制备方法. 中国: CN101221957, 2008.07.16.

[79] 毕津顺, 吴俊峰, 海潮和, 韩郑生. 一种高击穿电压绝缘体上硅器件结构及其制备方法. 中国: CN101118924, 2008.02.06.

[80] 毕津顺, 海潮和. 一种源体欧姆接触绝缘体上硅晶体管的制作方法. 中国: CN101162696, 2008-04-16.

[81] 毕津顺, 海潮和, 韩郑生. 栅体通过反偏肖特基结连接SOI动态阈值晶体管的方法. 中国: CN101090122, 2007-12-19.

出版信息

   
发表论文
[1] Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, ZuoGuang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song. Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses. Journal of Materiomics[J]. 2022, 8(2): 382-391, [2] Wang, Hanbin, Bi, Jinshun, Liu, Mengxin, Han, Tingting. Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure. ELECTRONICS[J]. 2021, 10(13): http://dx.doi.org/10.3390/electronics10131585.
[3] Yang, Xueqin, Bi, Jinshun, Xu, Yannan, Xi, Kai, Ji, Lanlong. The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions. APPLIED PHYSICS EXPRESS[J]. 2021, 14(6): http://dx.doi.org/10.35848/1882-0786/abfa77.
[4] Fan, Linjie, Bi, Jinshun, Xi, Kai, Zhao, Biyao, Yang, Xueqin, Xu, Yannan. Sub-10-nm Air Channel Field Emission Device With Ultra-Low Operating Voltage. IEEE ELECTRON DEVICE LETTERS[J]. 2021, 42(9): 1390-1393, [5] Ju, Anan, Guo, Hongxia, Ding, Lili, Zhang, Fengqi, Zhong, Xiangli, Pan, Xiaoyu, Zhang, Hong, Bi, Jinshun. Analysis of Ion-Induced SEFI and SEL Phenomena in 90 nm NOR Flash Memory. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2021, 68(10): 2508-2515, [6] Bi Jinshun. Total Ionizing Dose Effects on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide Stack Ferroelectric Tunneling Junctions. SCIENCE CHINA Information Sciences. 2021, [7] Bi Jinshun. Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tool. Semiconductor Science and Technology. 2021, [8] Yan, Gangping, Xi, Kai, Xu, Gaobo, Bi, Jinshun, Yin, Huaxiang. Analysis of Single Event Effects in Capacitor-Less 1T-DRAM Based on an InGaAs Transistor. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 1604-1609, https://www.webofscience.com/wos/woscc/full-record/WOS:000633331000031.
[9] Wang, Jianjian, Bi, Jinshun, Liu, Gang, Bai, Hua, Xi, Kai, Li, Bo, Ji, Lanlong, Majumdar, Sandip. Simulations of single event effects in 6T2C-based ferroelectric non-volatile static random access memory. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2021, 36(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000592076000001.
[10] Wang, Jianjian, Bi, Jinshun, Liu, Gang, Bai, Hua, Xi, Kai, Li, Bo, Majumdar, Sandip, Ji, Lanlong, Liu, Ming, Zhang, Zhangang. Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. SCIENCE CHINA-INFORMATION SCIENCESnull. 2021, 64(4): http://dx.doi.org/10.1007/s11432-019-2854-9.
[11] Cao, Yang, Tian, Guoliang, Sandip, Majumdar, Bi, Jinshun, Xi, Kai, Li, Bo. Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2021, 36(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000625101100001.
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[79] Zhang, Feng, Fan, Dongyu, Duan, Yuan, Li, Jin, Fang, Cong, Li, Yun, Han, Xiaowei, Dai, Lan, Chen, Chengying, Bi, Jinshun, Liu, Ming, Chang, MengFan, IEEE. A 130nm 1Mb HfOX Embedded RRAM Macro Using Self-Adaptive Peripheral Circuit System Techniques for 1.6X Work Temperature Range. 2017 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)null. 2017, 173-176, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000426511300044.
[80] Xi Kai, Bi Jinshun, Liu Ming, Liu Jie, Wang Yan, Hou Mingdong, Jiang YL, Tang TA, Huang R. SENSITIVITY OF PROTON SINGLE EVENT EFFECT SIMULATION TOOL TO VARIATION OF INPUT PARAMETERS. 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2016, 1197-1199, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000478951000339.
[81] 谢凯毅, 王湾, 刘璟, 霍长兴, 谢元禄, 孙海涛, 张坤, 毕津顺, 刘明. Flash存储器中负压电荷泵的研究与设计. 微电子学与计算机[J]. 2016, 33(12): 34-37, [82] Xie Bingqing, Li Bo, Bi Jinshun, Bu Jianhui, Wu Chi, Li Binhong, Han Zhengsheng, Luo Jiajun. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices. Chinese Physics. B[J]. 2016, 25(7): 078501-1, [83] Ren, Yi, Chen, Li, Bi, Jinshun. An RHBD Bandgap Reference Utilizing Single Event Transient Isolation Technique. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2016, 63(3): 1927-1933, https://www.webofscience.com/wos/woscc/full-record/WOS:000382463600027.
[84] Zhang, Haohao, Bi, Jinshun, Wang, Haibin, Hu, Hongyang, Li, Jin, Ji, Lanlong, Liu, Ming. Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. MICROELECTRONICS RELIABILITY[J]. 2016, 67: 104-110, http://dx.doi.org/10.1016/j.microrel.2016.10.013.
[85] Xie, Bingqing, Li, Bo, Bi, Jinshun, Bu, Jianhui, Wu, Chi, Li, Binhong, Han, Zhengsheng, Luo, Jiajun. Effect of cryogenic temperature characteristics on 0.18-mu m silicon-on-insulator devices. CHINESE PHYSICS B[J]. 2016, 25(7): https://www.webofscience.com/wos/woscc/full-record/WOS:000384225800086.
[86] Bi Jinshun, Han Zhengsheng. Characteristics of HfO2/Hf-based bipolar resistive memories (vol 36, 064010, 2015). JOURNAL OF SEMICONDUCTORSnull. 2016, 37(3): [87] 吴驰, 毕津顺, 李博, 李彬鸿, 罗家俊, 韩郑生. PDSOI工艺下单粒子瞬态脉冲宽度分析. 太赫兹科学与电子信息学报[J]. 2016, 14(6): 977-981, http://lib.cqvip.com/Qikan/Article/Detail?id=Wd88888968907167504849544854485148.
[88] 呼红阳, 毕津顺, 李正平, 李云肖, 石聪, 赵爽, 金虎, 牛文成, 岳钊. 一种适用于ISFET阵列集成检测系统的读出电路设计. 南开大学学报. 自然科学版[J]. 2016, 49(6): 69-73,79, [89] 鲍进华, 吕荫学, 李博, 曾传滨, 毕津顺, 罗家俊. 一种基于标准CMOS工艺实现的锁相环电路. 电子设计工程. 2016, 24(2): 90-92, http://lib.cqvip.com/Qikan/Article/Detail?id=667967658.
[90] 李博, 毕津顺, 卜建辉, 吴驰, 李彬鸿, 韩郑生, 罗家俊. Effect of Cryogenic Temperature Characteristic on 0.18μm Silicon-on-insulator Devices. Chinese Physics B[J]. 2016, http://159.226.55.106/handle/172511/16157.
[91] 吴驰, 毕津顺, 滕瑞, 解冰清, 韩郑生, 罗家俊, 郭刚, 刘杰. 复杂数字电路中的单粒子效应建模综述. 微电子学[J]. 2016, 46(1): 117-123,127, [92] Bi Jinshun, Han Zhengsheng. Characteristics of HfO2/Hf-based bipolar resistive memories. JOURNAL OF SEMICONDUCTORS[J]. 2015, 36(6): 064010-01, [93] 毕津顺. 0.18μm PDSOI CMOS电路单粒子瞬态特性研究. 物理学报. 2015, [94] 吴驰, 毕津顺, 李博. 0.13μm PDSOI工艺下单粒子瞬态脉冲的产生和传播. 第十二届全国抗辐射电子学与电磁脉冲学术交流会null. 2015, http://159.226.55.106/handle/172511/16021.
[95] 毕津顺, 毕津顺, 李博, 罗家俊. 极端低温下硅基器件和电路特性研究进展. 微电子学[J]. 2015, 45(6): 789-795, [96] 国硕, 毕津顺, 罗家俊, 韩郑生. 基于Geant4 的三维半导体器件单粒子效应仿真. 半导体技术[J]. 2015, 40(8): 592-595,625, http://159.226.55.106/handle/172511/15859.
[97] 赵星, 梅博, 毕津顺, 郑中山, 高林春, 曾传滨, 罗家俊, 于芳, 韩郑生. 0.18μm部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究. 物理学报[J]. 2015, 136102-1, [98] Zhao Xing, Mei Bo, Bi JinShun, Zheng ZhongShan, Gao LinChun, Zeng ChuanBin, Luo JiaJun, Yu Fang, Han ZhengSheng. Single event transients in a 0.18 mu m partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit. ACTA PHYSICA SINICA[J]. 2015, 64(13): https://www.webofscience.com/wos/woscc/full-record/WOS:000357674600037.
[99] Song Gu, Jie Liu, Fazhan Zhao, Zhangang Zhang, Jinshun Bi, Chao Geng, Mingdong Hou, Gang Liu, Tianqi Liu, Kai Xi. Influence of edge effects on single event upset susceptibility of SOI SRAMs. Nuclear Inst. and Methods in Physics Research, B. 2015, 286-291, http://dx.doi.org/10.1016/j.nimb.2014.10.018.
[100] 鲍进华, 李博, 曾传滨, 高林春, 毕津顺, 刘海南, 罗家俊. 锁相环敏感模块的单粒子效应与设计加固. 半导体技术[J]. 2015, 40(7): 547-553, http://www.irgrid.ac.cn/handle/1471x/1089324.
[101] Gu, Song, Liu, Jie, Zhao, Fazhan, Zhang, Zhangang, Bi, Jinshun, Geng, Chao, Hou, Mingdong, Liu, Gang, Liu, Tianqi, Xi, Kai. Influence of edge effects on single event upset susceptibility of SOI SRAMs. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS[J]. 2015, 342: 286-291, http://dx.doi.org/10.1016/j.nimb.2014.10.018.
[102] Bi Jinshun. Influence of Edge Effects on Single Event Upset Susceptibility of SOI SRAM. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2015, [103] 林雪芳, B.Allard, 毕津顺, 李博. DC/DC变换器稳定性的分析方法. 电气工程与自动化:中英文版. 2015, 4(3): 35-38, http://lib.cqvip.com/Qikan/Article/Detail?id=675692265.
[104] Bi Jinshun, Zeng Chuanbin, Gao Linchun, Liu Gang, Luo Jiajun, Han Zhengsheng. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET. Chinese Physics. B[J]. 2014, 23(8): 088505-1, [105] 毕津顺, 韩郑生. Hf/HfO_2基双极阻变存储器研究. 功能材料与器件学报[J]. 2014, 20(5): 101-106, [106] Bi JinShun, Zeng ChuanBin, Gao LinChun, Liu Gang, Luo JiaJun, Han ZhengSheng. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-mu m MOSFET. CHINESE PHYSICS B[J]. 2014, 23(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000343875300102.
[107] Wang, H B, Bi, J S, Li, M L, Chen, L, Liu, R, Li, Y Q, He, A L, Guo, G. An Area Efficient SEU-Tolerant Latch Design. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2014, 61(6): 3660-3666, https://www.webofscience.com/wos/woscc/full-record/WOS:000346725400011.
[108] Li Bo, Bi Jinshun, Han Zhengsheng, Luo Jiajun, LinShi Xuefang, Allard Bruno, Chen Li, IEEE, Tang TA, Zhou J. A DIGITAL DIRECT CONTROLLER FOR BUCK CONVERTER. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)null. 2014, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000380478500311.
[109] Mei Bo, Bi Jinshun, Bu Jianhui, Han Zhengsheng. Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs. Journal of Semiconductors[J]. 2013, 34(1): 014004-1, [110] Bi JinShun, Liu Gang, Luo JiaJun, Han ZhengSheng. Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node. ACTA PHYSICA SINICA[J]. 2013, 62(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000327189800070.
[111] 毕津顺. 22nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究. 物理学报. 2013, [112] Bi, J S, Han, Z S, Zhang, E X, McCurdy, M W, Reed, R A, Schrimpf, R D, Fleetwood, D M, Alles, M L, Weller, R A, Linten, D, Jurczak, M, Fantini, A. The Impact of X-Ray and Proton Irradiation on HfO2/Hf-Based Bipolar Resistive Memories. IEEE TRANSACTIONS ON NUCLEAR SCIENCE[J]. 2013, 60(6): 4540-4546, https://www.webofscience.com/wos/woscc/full-record/WOS:000328967900070.
[113] 梅博, 毕津顺, 李多力, 刘思南, 韩郑生. Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFETInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. 半导体学报. 2012, 33(2): 36-40, http://lib.cqvip.com/Qikan/Article/Detail?id=40808552.
[114] 贾少旭, 毕津顺, 曾传滨, 韩郑生. 核反应影响半导体器件单粒子翻转的Geant4仿真. 核技术[J]. 2012, 35(10): 765-770, http://lib.cqvip.com/Qikan/Article/Detail?id=43564950.
[115] Mei Bo, Bi Jinshun, Li Duoli, Liu Sinan, Han Zhengsheng. Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET. JOURNAL OF SEMICONDUCTORS[J]. 2012, 33(2): 024002-1, [116] 范紫菡, 毕津顺, 罗家俊. 基于PDSOI单粒子翻转物理机制的SPICE模型研究. 微电子学与计算机[J]. 2011, 28(12): 40-45, http://lib.cqvip.com/Qikan/Article/Detail?id=40159048.
[117] Bi JinShun, Hai ChaoHe, Han ZhengSheng. Study on power characteristics of deep sub-micron SOI RF LDMOS. ACTA PHYSICA SINICA[J]. 2011, 60(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000287419100120.
[118] Wang Yiqi, Liu Mengxin, Bi Jinshun, Han Zhengsheng. PDSOI DTMOS for analog and RF application. 半导体学报. 2011, 32(5): 52-56, http://lib.cqvip.com/Qikan/Article/Detail?id=37756157.
[119] Bu Jianhui, Bi Jinshun, Liu Mengxin, Han Zhengsheng. A total dose radiation model for deep submicron PDSOI NMOS. 半导体学报[J]. 2011, 014002-1, http://lib.cqvip.com/Qikan/Article/Detail?id=36361596.
[120] Wang Yiqi, Liu Mengxin, Bi Jinshun, Han Zhengsheng. PDSOI DTMOS for analog and RF application. 半导体学报[J]. 2011, 32(5): 52-56, http://lib.cqvip.com/Qikan/Article/Detail?id=37756157.
[121] 毕津顺. 深亚微米SOI射频LDMOS功率特性研究. 物理学报[J]. 2011, http://lib.cqvip.com/Qikan/Article/Detail?id=36368275.
[122] 卜建辉, 毕津顺, 刘梦新, 韩郑生. A total dose radiation model for deep submicron PDSOI NMOS. 半导体学报. 2011, 33-35, http://lib.cqvip.com/Qikan/Article/Detail?id=36361596.
[123] Bu Jianhui, Bi Jinshun, Song Limei, Han Zhengsheng. Short channel effect in deep submicron PDSOI nMOSFETs. 半导体学报. 2010, 27-29, http://lib.cqvip.com/Qikan/Article/Detail?id=32639401.
[124] Bu Jianhui, Bi Jinshun, Xi Linmao, Han Zhengsheng. Deep submicron PDSOI thermal resistance extraction. 半导体学报. 2010, 14-16, http://lib.cqvip.com/Qikan/Article/Detail?id=35181571.
[125] 毕津顺, 韩郑生, 海潮和. 130nm PDSOI DTMOS体延迟研究. 半导体技术[J]. 2010, 35(9): 868-870, http://lib.cqvip.com/Qikan/Article/Detail?id=35307646.
[126] Bu Jianhui, Bi Jinshun, Song Limei, Han Zhengsheng. Short channel effect in deep submicron PDSOI nMOSFETs. 半导体学报[J]. 2010, 27-29, http://lib.cqvip.com/Qikan/Article/Detail?id=32639401.
[127] Bu Jianhui, Bi Jinshun, Xi Linmao, Han Zhengsheng. Deep submicron PDSOI thermal resistance extraction. 半导体学报[J]. 2010, 94001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=35181571.
[128] 卜建辉, 毕津顺, 宋李梅, 韩郑生. 深亚微米抗辐照PDSOI nMOSFET的热载流子效应. 微电子学[J]. 2010, 40(3): 461-463, http://lib.cqvip.com/Qikan/Article/Detail?id=34203840.
[129] 毕津顺, 韩郑生, 海潮和. SOI DTMOS温度特性研究. 半导体技术[J]. 2010, 35(7): 661-663, http://lib.cqvip.com/Qikan/Article/Detail?id=34586332.
[130] 宋文斌, 毕津顺, 韩郑生. SOI动态阈值MOS器件结构改进. 微电子学. 2009, 39(2): 280-284, http://lib.cqvip.com/Qikan/Article/Detail?id=30001278.
[131] Song Wenbin, Bi Jinshun, Han Zhengsheng. A novel SOI-DTMOS structure from circuit performance considerations. 半导体学报[J]. 2009, 34-38, http://lib.cqvip.com/Qikan/Article/Detail?id=29543259.
[132] 宋文斌, 毕津顺, 韩郑生. A novel SOI-DTMOS structure from circuit performance considerations. 半导体学报. 2009, 34-38, http://lib.cqvip.com/Qikan/Article/Detail?id=29543259.
[133] Liu Mengxin, Han Zhengsheng, Bi Jinshun, Fan Xuemei, Liu Gang, Du Huan. Effect of total ionizing dose radiation on the 0.25μm RF PDSOI nMOSFETs with thin gate oxide. 半导体学报. 2009, 23-29, http://lib.cqvip.com/Qikan/Article/Detail?id=29407924.
[134] 范雪梅, 毕津顺, 刘梦新, 杜寰. PD SOI MOSFET低频噪声研究进展. 微电子学. 2008, 38(6): 817-822, http://lib.cqvip.com/Qikan/Article/Detail?id=29011475.
[135] Bi Jinshun. Total ionizing dose radiation effects of RF PDSOI LDMOS transistors. 半导体学报. 2008, [136] 刘梦新, 韩郑生, 毕津顺, 范雪梅, 刘刚, 杜寰, 宋李梅. RF PDSOI LDMOS器件的电离总剂量辐照效应. 半导体学报. 2008, 29(11): 2158-2163, http://lib.cqvip.com/Qikan/Article/Detail?id=28718890.
[137] 毕津顺, 宋李梅, 海潮和, 韩郑生. SOI LDMOSFET的背栅特性. 半导体学报. 2008, 29(11): 2148-2152, http://lib.cqvip.com/Qikan/Article/Detail?id=28718888.
[138] 毕津顺. 部分耗尽SOI器件研究. 2008, [139] 宋文斌, 毕津顺, 韩郑生. 新型部分耗尽SOI器件体接触结构. 半导体技术. 2008, 33(11): 968-971, http://lib.cqvip.com/Qikan/Article/Detail?id=28678065.
[140] 毕津顺. PDSOI体源连接环形栅nMOS特性研究. 固体电子学研究与进展. 2008, [141] 毕津顺, 海潮和. 动态阈值nMOSFET阈值电压随温度退化特性. 固体电子学研究与进展. 2008, 28(4): 475-478, http://lib.cqvip.com/Qikan/Article/Detail?id=29587121.
[142] Bi Jinshun, Hai Chaohe. PDSOI nMOSFETs关态击穿特性. 半导体学报. 2007, 28(1): 14-18, http://lib.cqvip.com/Qikan/Article/Detail?id=23664008.
[143] 毕津顺, 海潮和. PDSOI nMOSFETs关态击穿特性. 半导体学报. 2007, 28(1): 14-18, http://lib.cqvip.com/Qikan/Article/Detail?id=23664008.
[144] 毕津顺, 海潮和. 0.8μm PDSOI CMOS器件和环振电路研究. 半导体技术. 2007, 32(6): 490-493, http://lib.cqvip.com/Qikan/Article/Detail?id=24619956.
[145] Bi Jinshun. Off-state breakdown characteristics of PDSOI nMOSFETs. 半导体学报. 2007, [146] 毕津顺, 吴峻峰, 李瑞贞, 海潮和. 绝缘体上硅动态阈值nMOSFETs特性研究. 电子器件. 2007, 30(1): 5-8, http://lib.cqvip.com/Qikan/Article/Detail?id=23941317.
[147] 毕津顺, 吴峻峰, 海潮和. 双栅动态阈值SOI nMOSFET数值模拟. 半导体学报. 2006, 27(1): 35-40, http://lib.cqvip.com/Qikan/Article/Detail?id=21162902.
[148] Bi Jinshun, Hai Chaohe. SOI反偏肖特基势垒动态阈值MOS特性. 半导体学报. 2006, 27(9): 1526-1530, http://lib.cqvip.com/Qikan/Article/Detail?id=22775318.
[149] Bi Jinshun. Influence of edge implant on subthreshold leakage current of H-Gate SOI pMOSFETs. 半导体学报. 2006, [150] Bi Jinshun. Study on the characteristics of SOI DTMOS with reverse schottky barriers. 半导体学报. 2006, [151] Wu Junfeng, Li Duoli, Bi Jinshun, Xue Lijun, Hai Chaohe. 边缘注入对H型栅SOI pMOSFETs亚阈值泄漏电流的影响. 电子器件[J]. 2006, 29(4): 996-999,1003, http://www.irgrid.ac.cn/handle/1471x/1089968.
[152] HAI Chaohe, XUE Lijun, LI Duoli, WU Junfeng, BI Jinshun. Improved hot carrier reliability for PDSOI nMOSFETs with half - back - channel implantation. Journal of Functional Materials and Devices[J]. 2006, 12(5): 389-394, [153] Bi Jinshun. Simulation of a double-gate dynamic threshold voltage fully depleted silicon-on-insulator nMOSFET. 半导体学报. 2006, [154] 毕津顺, 海潮和. SOI反偏肖特基势垒动态阈值MOS特性. 半导体学报. 2006, 27(9): 1526-1530, http://lib.cqvip.com/Qikan/Article/Detail?id=22775318.
[155] Wu Junfeng, Hai Chaohe, Bi Jinshun. 双栅动态阈值SOI nMOSFET数值模拟. 半导体学报. 2006, 27(1): 35-40, http://lib.cqvip.com/Qikan/Article/Detail?id=21162902.
[156] Bi Jinshun. Improved breakdown voltage of partially depleted SOI nMOSFETs with half-back-channel implantation. 半导体学报. 2005, [157] 毕津顺, 海潮和, 韩郑生. SOI动态阈值MOS研究进展. 电子器件. 2005, 28(3): 551-555, http://lib.cqvip.com/Qikan/Article/Detail?id=20078479.
[158] 吴峻峰, 钟兴华, 李多力, 毕津顺, 海潮和. 采用半背沟注入提高部分耗尽SOI nMOSFETs的漏源击穿电压. 半导体学报. 2005, 26(10): 1875-1880, http://lib.cqvip.com/Qikan/Article/Detail?id=20281945.
[159] Wu Junfeng, Zhong xinghua, Li Duoli, Bi Jinshun, Hai Chaohe. 采用半背沟注入提高部分耗尽SOI nMOSFETs的漏源击穿电压. 半导体学报. 2005, 26(10): 1875-1880, http://lib.cqvip.com/Qikan/Article/Detail?id=20281945.
发表著作
(1) 现代电子系统软错误, 电子工业出版社, 2016-07, 第 2 作者
(2) 现代集成电路和电子系统的地球环境辐射效应, 电子工业出版社, 2018-11, 第 1 作者

科研活动

   
科研项目
( 1 ) 面向空间应用深亚微米SOI 集成器件辐照损伤机理研究, 主持, 国家级, 2012-01--2015-12
( 2 ) 地面模拟空间辐射环境下的技术方法及单粒子效应研究, 参与, 国家级, 2012-01--2015-12
( 3 ) 新型微电子器件集成的基础研究, 参与, 国家级, 2016-01--2020-12
( 4 ) Flash存储器辐照效应模拟, 参与, 部委级, 2015-09--2018-08
( 5 ) 先进非易失性存储器辐照效应与加固技术基础研究, 主持, 国家级, 2017-01--2021-12
( 6 ) xxxx存储器设计技术研究, 主持, 国家级, 2017-01--2018-12
参与会议
(1)The total ionizing dose (TID) effects of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cell and 65-nm floating gate (FG) memory cell   2018-10-31
(2)CMOS-compatible Hf0.5Zr0.5O2-based Ferroelectric Capacitors for Negative Capacitance and Non-volatile Applications   2018-10-31
(3)The synergetic effects of high temperature gate bias and total ionization dose on 1.2kV SiC devices   2018-10-01
(4)otal Ionizing Dose and Single Event Effects of 1Mb HfO2-based Resistive-Random-Access Memory   2018-10-01
(5) Total Ionizing Dose Effects of 1Mb HfO2-based Resistive-Random-Access Memory   2018-07-16
(6)The dependence of single event effect on heavy ion angular irradiation by Geant4 simulation   2018-05-16
(7)On orbit screen and positioning chip technology for single event effect of spacecraft   2018-05-16
(8)Reliability Issues and Radiation Effects on Emerging Non-volatile Memories   2018-03-19
(9)Radiation Effects on 1 Mb HfO2-based Resistive Memory   2017-10-02
(10)Total Ionization Dose Effects on Charge Trapping Memory (CTM) with Al2O3/HfO2/Al2O3 Trilayer Structure   毕津顺   2017-07-24
(11)Pulsed-Laser Testing for Single Event Effects in a Stand-Alone Resistive Random Access Memory   2017-07-04
(12)The impacts of total ionizing dose irradiation on NOR Flash memory   毕津顺   2016-10-25
(13)SENSITIVITY OF PROTON SINGLE EVENT EFFECT SIMULATION TOOL TO VARIATION OF INPUT PARAMETERS   习凯   2016-10-25
(14)Proton Irradiation Effects and Annealing Behaviors of 16Mb Magneto-resistive Random Access Memory(MRAM)   张浩浩   2016-10-25
(15)Total Ionizing Dose and Heavy Ion Effects of 4M Serial-Peripheral-Interface(SPI) NOR Flash Memory   毕津顺   2016-07-10
(16)Total ionizing dose effects and annealing behaviors of a commercial 16Mb megneto-resistive random access memory (MRAM)   张浩浩   2016-07-10
(17)The Body Bias Effects on the Single-Event-Transient of Silicon-On-Insulator CMOS Technology   毕津顺   2016-05-23
(18)Body Bias Effects on the Single-Event-Transient Response of PDSOI Devices   毕津顺   2015-09-10
(19)Single event induced upsets in HfO2/Hf 1T1R RRAM   William G. Bennett, Nicholas C. Hooten, Ronald D. Schrimpf, Jinshun Bi, Mike L. Alles, Robert A. Reed, Dimitri Linten, Malgorzata Jurczak, and Andrea Fantini   2013-09-23
(20)High reliable silicon-on-insulator CMOS technology aimed at lunar and deep space exploration   Jinshun Bi, Gang Liu, Jianjun Luo , and Zhengsheng Han   2013-09-03
(21)Geant4应用于半导体器件单粒子翻转效应的研究   中国宇航学会深空探测技术专业委员会第十届学术年会   贾少旭,毕津顺,刘刚,罗家俊,韩郑生   2013-08-03
(22)空间辐射单粒子瞬态脉冲宽度测量电路研究   中国宇航学会深空探测技术专业委员会第十届学术年会   宿晓慧,毕津顺,刘刚,罗家俊,韩郑生   2013-08-03
(23)Total-dose response of HfO2/Hf-based bipolar resistive memories   Jinshun Bi, Zhengsheng Han, En Xia Zhang, Mike McCurdy, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, Michael L. Alles, Robert A. Weller, Dimitri Linten, Malgorzata Jurczak, and Andrea Fantini   2013-07-08
(24)Radiation effects on LiNbO2 memristor for neuromorphic computing applications   Jordan D Greenlee, Joshua C. Shank, James L. Compagnoni, M. Brooks Tellekamp, Enxia Zhang, Jinshun Bi, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, and W. Alan Doolittle   2013-07-08
(25)Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs   Jinshun Bi, Zhengsheng Han, R. A. Reed, R. D. Schrimpf, and D. M. Fleetwood   2013-04-14
(26)Estimation of pulsed laser induced single event transient in a PDSOI 0.18μm single MOSFET   Jinshun Bi, Chuanbin Zeng, Linchun Gao, Duoli Li, Gang Liu, Jiajun Luo, Zhengsheng Han, R. A. Reed, R. D. Schrimpf, and D. Fleetwood   2012-12-10
(27)A compact model for the STI y-stress effect on deep submicron PDSOI MOSFETs   Jianhui Bo, Jinshun Bi, Xianjun Ma, Jiajun Luo, Zhengsheng Han, and Haogang Cai   2012-10-29
(28)PDSOI ESD防护用SCR结构研究   第十七届全国半导体集成电路,硅材料学术会议   曾传滨,毕津顺,姜一波,罗家俊,韩郑生   2011-11-18
(29)PDSOI 单粒子翻转SPICE模型研究   第十七届全国半导体集成电路,硅材料学术会议   毕津顺,范紫菡,曾传滨,罗家俊,韩郑生   2011-11-18
(30)薄栅氧损伤机理研究   第十七届全国半导体集成电路,硅材料学术会议   田建,毕津顺,罗家俊,韩郑生   2011-11-18
(31)深亚微米PDSOI nMOSFETs 热载流子寿命研究   第十七届全国半导体集成电路,硅材料学术会议   卜建辉,毕津顺,吕荫学,罗家俊,韩郑生   2011-11-18
(32)SOI器件总剂量辐射模型研究   第十一届全国抗辐射电子学与电磁脉冲学术年会   卜建辉,毕津顺,刘梦新,罗家俊,韩郑生   2011-11-18
(33)面向深空探测耐低温抗辐射集成电路设计方法学研究   中国宇航学会深空探测技术专业委员会第八届学术年会   毕津顺,曾传滨,刘刚,罗家俊,韩郑生   2011-10-25
(34)Extraction method for thermal resistance in deep submicron PDSOI MOSFETs   Jinshun Bi, Jianhui Bo, and Zhengsheng Han   2010-10-01
(35)抗辐照加固SOI SRAM研究   第七届全国SOI技术研讨会   毕津顺,海潮和   2007-05-01
(36)The PDSOI accumulation-mode dynamic threshold pMOS with reversed schottky barrier   Jinshun Bi, and Chaohe Hai   2006-10-23

指导学生

已指导学生

张浩浩  硕士研究生  080903-微电子学与固体电子学  

李梅  硕士研究生  080903-微电子学与固体电子学  

现指导学生

徐彦楠  硕士研究生  080903-微电子学与固体电子学  

郑斯文  硕士研究生  085208-电子与通信工程  

陈丹旸  硕士研究生  085208-电子与通信工程  

曹杨  硕士研究生  085208-电子与通信工程  

杨雪琴  硕士研究生  080903-微电子学与固体电子学