半导体器件可靠性物理

半导体器件界面研究

半导体材料缺陷计算

   

070205-凝聚态物理

半导体器件可靠性物理，半导体器件界面研究，半导体材料缺陷计算

2012-09--2017-06   湖南大学   获得博士学位
2008-09--2012-06   湖南大学   获得学士学位

   

2023-03~现在, 中国科学院半导体研究所, 研究员
2020-11~2023-03,中国科学院半导体研究所, 副研究员
2019-02~2020-04,美国劳伦斯伯克利国家实验室, 访问学者
2017-07~2020-10,中国科学院半导体研究所, 博士后

   

（ 1 ） 晶体管可靠性多尺度模拟方法, 发明专利, 2024, 第 1 作者, 专利号: 2024101818660

（ 2 ） 基于氧化镓单晶的日盲偏振探测器及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114744059A

（ 3 ） 新型二维/三维异质异构的高速光电探测器及其制备方法, 发明专利, 2022, 第 4 作者, 专利号: CN114649428A

（ 4 ） 新型二维/三维异质异构的高速光电探测器及其制备方法, 发明授权, 2023, 第 4 作者, 专利号: CN114649428B

（ 5 ） 光电传感器及其制备方法、图像传感器中的应用, 发明专利, 2022, 第 4 作者, 专利号: CN114582993A

   

[1] Xiong Tao, 刘岳阳. Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory. Journal of Applied Physics[J]. 2024, 第 2 作者  通讯作者  null(null): 
[2] Liu, ZhuYou, Cai, Xuefen, Zhang, CaiXin, Cao, RuYue, Liu, YueYang, Deng, HuiXiong. Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2023, 第 5 作者56(10): http://dx.doi.org/10.1088/1361-6463/acbaa8.
[3] Zhou, Jingshu, Xiong, Tao, Guo, Zhengfeng, Xin, Kaiyao, Wang, Xiaoyu, Gu, Honggang, Liu, YueYang, Liu, Liyuan, Yang, Juehan, Wei, Zhongming. Wide-Spectrum Polarization-Sensitive Photodetector Based on Spontaneous GaTe/Ga-2(TexO1-x)(5 )Heterostructure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2023, 第 7 作者70(4): 1715-1720, http://dx.doi.org/10.1109/TED.2023.3242932.
[4] Zirui Wang, Yue-Yang Liu, Runsheng Wang. New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS. International Electron Devices Meeting (IEDM). 2023, 第 2 作者  通讯作者  null(null): 
[5] Wang, Xingang, Xiong, Tao, Zhao, Kai, Zhou, Ziqi, Xin, Kaiyao, Deng, HuiXiong, Kang, Jun, Yang, Juehan, Liu, YueYang, Wei, Zhongming. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. ADVANCED MATERIALS[J]. 2022, 第 9 作者  通讯作者  34(2): 2107206, 
[6] Tao Xiong, Juehan Yang, Hui-Xiong Deng, Zhongming Wei, Yue-Yang Liu. The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors’ reliability by high-k dielectric and yttrium-doping: From the view of charge trapping. Journal of Applied Physics[J]. 2022, 第 5 作者  通讯作者  132(17): 174506, https://doi.org/10.1063/5.0112814.
[7] Hu, Haodong, Feng, Ze, Wang, Yibo, Liu, Yan, Dong, Hong, Liu, YueYang, Hao, Yue, Han, Genquan. The role of surface pretreatment by low temperature O-2 gas annealing for beta-Ga2O3 Schottky barrier diodes. APPLIED PHYSICS LETTERS[J]. 2022, 第 6 作者  通讯作者  120(7): http://dx.doi.org/10.1063/5.0080343.
[8] Li, Wanying, Guo, Yimeng, Luo, Zhaoping, Wu, Shuhao, Han, Bo, Hu, Weijin, You, Lu, Watanabe, Kenji, Taniguchi, Takashi, Alava, Thomas, Chen, Jiezhi, Gao, Peng, Li, Xiuyan, Wei, Zhongming, Wang, LinWang, Liu, YueYang, Zhao, Chengxin, Zhan, Xuepeng, Han, Zheng Vitto, Wang, Hanwen. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory. ADVANCED MATERIALS[J]. 2022, 第 16 作者  通讯作者  
[9] Liu, Hao, Wang, Pan, Zong, Yixin, Wen, Hongyu, Liu, YueYang, Xia, Jianbai. Giant tunnel magnetoresistance in two-dimensional van der Waals magnetic tunnel junctions: Ag/CrI3/MoSi2N4/CrI3/Ag. PHYSICAL REVIEW B[J]. 2022, 第 5 作者  通讯作者  106(10): 
[10] Liu, Hao, Liu, YueYang, Wen, Hongyu, Wu, Haibin, Zong, Yixin, Xia, Jianbai, Wei, Zhongming. Spin-Filter Magnetic Tunnel Junctions Based on A-Type Antiferromagnetic CrSBr with Giant Tunnel Magnetoresistance. MAGNETOCHEMISTRY[J]. 2022, 第 2 作者  通讯作者  8(8): http://dx.doi.org/10.3390/magnetochemistry8080089.
[11] Wang, Pan, Zong, Yixin, Liu, Hao, Wen, Hongyu, Liu, Yueyang, Wu, HaiBin, Xia, JianBai. Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2021, 第 5 作者  通讯作者  23(2): 1510-1519, http://dx.doi.org/10.1039/d0cp05354f.
[12] Liu, YueYang, Wei, Zhongming, Meng, Sheng, Wang, Runsheng, Jiang, Xiangwei, Huang, Ru, Li, ShuShen, Wang, LinWang. Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory. PHYSICAL REVIEW B[J]. 2021, 第 1 作者104(11): http://dx.doi.org/10.1103/PhysRevB.104.115310.
[13] Ma, Xiaolei, Liu, YueYang, Zeng, Lang, Chen, Jiezhi, Wang, Runsheng, Wang, LinWang, Wu, Yanqing, Jiang, Xiangwei. Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 第 2 作者14(1): 2185-2193, http://dx.doi.org/10.1021/acsami.1c16884.
[14] Yan, Yong, Yang, Juehan, Du, Juan, Zhang, Xiaomei, Liu, YueYang, Xia, Congxin, Wei, Zhongming. Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate. ADVANCED MATERIALS[J]. 2021, 第 5 作者33(22): http://dx.doi.org/10.1002/adma.202008761.
[15] Liu, Feilong, Liu, YueYang, Li, Ling, Zhou, Guofu, Jiang, Xiangwei, Luo, JunWei. Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High-kappa MOSFETs. PHYSICAL REVIEW APPLIED[J]. 2020, 第 2 作者13(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000513243900004.
[16] Xu, Ran, Lin, Na, Jia, Zhitai, Liu, Yueyang, Wang, Haoyuan, Yu, Yifei, Zhao, Xian. First principles study of Schottky barriers at Ga2O3(100)/metal interfaces. RSC ADVANCES[J]. 2020, 第 4 作者  通讯作者  10(25): 14746-14752, https://www.webofscience.com/wos/woscc/full-record/WOS:000528740900033.
[17] 刘岳阳. 半导体器件可靠性的物理机制研究. 2020, 第 1 作者
[18] Yueyang Liu, Xiangwei Jiang, Liwei Wang, Yunfei En, Runsheng Wang. Distinguishing interfacial hole traps in (110), (100) high-k gate stack. 2019 IEEE International Reliability Physics Symposium (IRPS). 2019, 第 1 作者null(null): 655-658, 
[19] Liu, YueYang, Liu, Feilong, Wang, Runsheng, Luo, JunWei, Jiang, Xiangwei, Huang, Ru, Li, ShuShen, Wang, LinWang. Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO2/HfO2 Stacks from First-Principle Calculations. PHYSICAL REVIEW APPLIED[J]. 2019, 第 1 作者12(6): http://dx.doi.org/10.1103/PhysRevApplied.12.064012.
[20] Liu, YueYang, Zheng, Fan, Jiang, Xiangwei, Luo, JunWei, Li, ShuShen, Wang, LinWang. Ab Initio Investigation of Charge Trapping Across the Crystalline-Si-Amorphous-SiO2 Interface. PHYSICAL REVIEW APPLIED[J]. 2019, 第 1 作者11(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000465185400002.
[21] Liu, YueYang, Zhang, YuJia, Jia, PinZhen, Cao, XuanHao, Jiang, Xiangwei, Chen, KeQiu. An efficient mechanism for enhancing the thermoelectricity of nanoribbons by blocking phonon transport in 2D materials. JOURNAL OF PHYSICS-CONDENSED MATTER[J]. 2018, 第 1 作者30(27): http://www.corc.org.cn/handle/1471x/2429476.
[22] Liu YueYang, Jiang Xiangwei, IEEE. Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theory. 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)[J]. 2018, 第 1 作者null(null): 
[23] Li, Xiuqiang, Liu, Yueyang, Zheng, Qinghui, Yan, Xuejun, Yang, Xin, Lv, Guangxin, Xu, Ning, Wang, Yuxi, Lu, Minghui, Chen, Keqiu, Zhu, Jia. Anomalous thermal anisotropy of two-dimensional nanoplates of vertically grown MoS2. APPLIED PHYSICS LETTERS[J]. 2017, 第 2 作者111(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000413294800034.
[24] Liu, YueYang, Li, BoLin, Chen, ShiZhang, Jiang, Xiangwei, Chen, KeQiu. Effect of room temperature lattice vibration on the electron transport in graphene nanoribbons. APPLIED PHYSICS LETTERS[J]. 2017, 第 1 作者111(13): http://ir.semi.ac.cn/handle/172111/28558.
[25] Liu, YueYang, Li, BoLin, Zhou, WuXing, Chen, KeQiu. Triggering piezoelectricity directly by heat to produce alternating electric voltage. APPLIED PHYSICS LETTERS[J]. 2016, 第 1 作者109(11): 
[26] Liu, YueYang, Zhou, WuXing, Chen, KeQiu. Conjunction of standing wave and resonance in asymmetric nanowires: a mechanism for thermal rectification and remote energy accumulation. SCIENTIFIC REPORTS[J]. 2015, 第 1 作者5: https://www.webofscience.com/wos/woscc/full-record/WOS:000365682300001.
[27] Liu, YueYang, Zhou, WuXing, Tang, LiMing, Chen, KeQiu. An important mechanism for thermal rectification in graded nanowires. APPLIED PHYSICS LETTERS[J]. 2014, 第 1 作者105(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000345513300070.
[28] Liu, YueYang, Zhou, WuXing, Tang, LiMing, Chen, KeQiu. Core-shell nanowire serves as heat cable. APPLIED PHYSICS LETTERS[J]. 2013, 第 1 作者103(26): https://www.webofscience.com/wos/woscc/full-record/WOS:000329977400071.

   

（ 1 ） 半导体器件中缺陷相关可靠性物理的多尺度计算模拟, 参与, 国家任务, 2024-01--2028-12
（ 2 ） 面向直流控保设备关键模拟芯片可靠性提升技术研究, 参与, 境内委托项目, 2022-12--2025-11
（ 3 ） 工业模拟芯片可靠性模型及仿真方法研究, 参与, 国家任务, 2022-10--2025-09
（ 4 ） FinFET和GAAFET热载流子可靠性的原子级动力学理论研究, 负责人, 国家任务, 2022-01--2025-12
（ 5 ） 半导体氧化层多界面缺陷中心电荷俘获机理研究, 负责人, 国家任务, 2021-01--2023-12

（1）Atomic level to device level simulation of transistor’s reliability   Yue-Yang Liu   2024-05-10
（2）半导体器件可靠性相关缺陷物理   第二届全国半导体缺陷研讨会   刘岳阳   2024-04-12