基本信息
闫建昌  男  博导  中国科学院半导体研究所
电子邮件: yanjc@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号中科院半导体所
邮政编码: 100083

研究领域

1、氮化物半导体材料与器件;

2、氮化物半导体材料的MOCVD外延;

3、紫外发光二极管(UVLED);

4、紫外激光二极管(UV LD);

5、二维材料及微纳结构与氮化物材料、器件的创新融合;

6、氮化物半导体无源光子学;

6、氮化物半导体人工光合成。

招生信息

   
招生专业
0805Z2-半导体材料与器件
招生方向
氮化物半导体材料与器件
GaN基LED及激光器
低维结构材料与器件

教育背景

2004-09--2009-07   中国科学院半导体研究所   工学博士
2000-09--2004-07   清华大学   学士学位

工作经历

   
工作简历
2018-01~现在, 中国科学院半导体研究所, 研究员
2013-01~2017-12,中国科学院半导体研究所, 副研究员
2009-07~2012-12,中国科学院半导体研究所, 助理研究员

教授课程

第三代半导体材料及应用

专利与奖励

   
奖励信息
(1) 5th BRICS Youth Innovator Prize, 二等奖, 国家级, 2022
(2) 国家科学技术进步奖, 二等奖, 国家级, 2015
(3) 北京市科学技术奖一等奖, 一等奖, 省级, 2012
专利成果
[1] 王军喜, 刘春岩, 孙雪娇, 魏学成, 闫建昌. 紫外LED模组. CN202210199434.3, 2022-03-02.
[2] 刘春岩, 孙雪娇, 魏学成, 闫建昌, 王军喜. 紫外LED模组. CN: CN114650634A, 2022-06-21.
[3] 薛斌, 闫建昌, 刘春岩, 张宁, 王军喜, 李晋闽. 可穿戴式无创光疗装置. CN: CN114146317A, 2022-03-08.
[4] 王军喜, 王大地, 郭亚楠, 刘志彬, 闫建昌. 一种AlGaN基紫外激光器的生长方法. CN: CN113445130B, 2023-02-24.
[5] 郭亚楠, 蔡听松, 刘志彬, 闫建昌, 王军喜. 极性交替AlN模板的制备方法. CN: CN113539791A, 2021-10-22.
[6] 王军喜, 王大地, 郭亚楠, 刘志彬, 闫建昌. 一种AlGaN基紫外激光器的生长方法. CN: CN113445130A, 2021-09-28.
[7] 王军喜, 张睿洁, 郭亚楠, 刘志彬, 闫建昌. AlGaN薄膜的制备方法. CN: CN113437186A, 2021-09-24.
[8] 蔡听松",null,null,null,"王军喜. 一种AlN薄膜的制备方法. CN: CN113451457A, 2021-09-28.
[9] 刘春岩, 闫建昌, 薛斌, 王军喜, 李晋闽. 一种通用LED测试装置及测试方法. CN: CN113358998B, 2023-01-06.
[10] 刘春岩, 闫建昌, 薛斌, 王军喜, 李晋闽. 一种通用LED测试装置及测试方法. CN: CN113358998A, 2021-09-07.
[11] 刘春岩, 闫建昌, 王军喜, 李晋闽. 紫外LED封装结构及其封装方法. CN: CN112750934A, 2021-05-04.
[12] 魏同波, 常洪亮, 闫建昌, 王军喜, 李晋闽. 一种在异质衬底上生长高质量氮化铝薄膜的方法. CN: CN114284397A, 2022-04-05.
[13] 刘志彬, 郭亚楠, 闫建昌, 李晋闽, 王军喜. 高质量AlN模板的应力与晶圆翘曲控制方法. CN: CN111710595A, 2020-09-25.
[14] 刘志彬, 郭亚楠, 闫建昌, 李晋闽, 王军喜. 极性可控的高质量AlN模板制备方法. CN: CN111676451A, 2020-09-18.
[15] 郭亚楠, 刘志彬, 闫建昌, 李晋闽, 王军喜. 高质量低应力AlN图形模板的制备方法. CN: CN111710594A, 2020-09-25.
[16] 郭亚楠, 刘志彬, 闫建昌, 李晋闽, 王军喜. 提高LED倒装芯片光提取效率的方法. CN: CN111710765B, 2021-05-18.
[17] 郭亚楠, 闫建昌, 刘志彬, 王军喜, 李晋闽. 具有p型极化掺杂的III族氮化物光电子器件. CN: CN111710762B, 2021-10-15.
[18] 闫建昌, 刘春岩, 王军喜, 李晋闽. 带有光强自动反馈校正功能的紫外光源系统及其应用. CN: CN111542152A, 2020-08-14.
[19] 刘春岩, 闫建昌, 王军喜, 李晋闽. 便携式紫外LED杀菌消毒盒. CN: CN111388705A, 2020-07-10.
[20] 刘春岩, 闫建昌, 王军喜, 李晋闽. 一种陶瓷基板及其封装方法. CN: CN111463334A, 2020-07-28.
[21] 郭亚楠, 闫建昌, 王军喜, 李晋闽. 反极性垂直发光二极管及其制备方法. CN: CN110808319B, 2021-08-17.
[22] 刘春岩, 闫建昌, 郭亚楠, 王军喜, 李晋闽. 基于紫外LED杀菌新风系统. CN: CN211204334U, 2020-08-07.
[23] 刘春岩, 闫建昌, 郭亚楠, 王军喜, 李晋闽. 基于紫外LED杀菌新风系统及应用. CN: CN110657545A, 2020-01-07.
[24] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置. CN: CN211214531U, 2020-08-11.
[25] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置及其应用. CN: CN110680937B, 2023-05-02.
[26] 闫建昌, 刘春岩, 薛斌, 郭亚楠, 王军喜, 李晋闽. 紫外LED匀光装置及其应用. CN: CN110680937A, 2020-01-14.
[27] 薛斌, 闫建昌, 王军喜, 李晋闽. 具有消毒功能的便携式充电装置. CN: CN210577842U, 2020-05-19.
[28] 薛斌, 闫建昌, 王军喜, 李晋闽. 具有消毒功能的便携式充电装置及应用. CN: CN110417097A, 2019-11-05.
[29] 冉军学, 魏同波, 闫建昌, 王军喜. 化合物半导体及其外延方法. CN: CN110164757A, 2019-08-23.
[30] 冉军学, 魏同波, 闫建昌, 王军喜. 肖特基二极管及其制备方法、半导体功率器件. CN: CN110071177A, 2019-07-30.
[31] 魏同波, 常洪亮, 闫建昌, 王军喜. 在图形衬底上生长氮化物薄膜结构及其方法. CN: CN111341648A, 2020-06-26.
[32] 梁冬冬, 魏同波, 闫建昌, 王军喜. 基于非晶衬底生长氮化物的方法及结构. CN: CN109585270A, 2019-04-05.
[33] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种无线充电系统. CN: CN209329789U, 2019-08-30.
[34] 常洪亮, 魏同波, 闫建昌, 王军喜. 在图形衬底上生长氮化物薄膜的方法. CN: CN109285758A, 2019-01-29.
[35] 王军喜, 张亮, 郭亚楠, 吴清清, 闫建昌. 一种基于多孔外延模板的紫外发光二极管及其制作方法. CN: CN108922947A, 2018-11-30.
[36] 闫建昌, 张亮, 郭亚楠, 吴清清, 王军喜. 一种垂直结构发光二极管芯片的制作方法. CN: CN108878604A, 2018-11-23.
[37] 闫建昌, 张亮, 郭亚楠, 吴清清, 王军喜. 一种垂直结构发光二极管芯片的制作方法. CN: CN108878598A, 2018-11-23.
[38] 魏同波, 张翔, 闫建昌, 王军喜, 李晋闽. 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法. 中国: CN108630792A, 2018-10-09.
[39] 魏同波, 张翔, 闫建昌, 王军喜, 李晋闽. 基于Ga 2 O 3 衬底的垂直结构紫外LED及其制备方法. CN: CN108630792A, 2018-10-09.
[40] 闫建昌, 刘春岩, 郭亚楠, 魏学成, 李晋闽, 王军喜. 基于人体识别深紫外LED杀菌消毒系统. CN: CN110269950A, 2019-09-24.
[41] 闫建昌, 郭亚楠, 王军喜, 李晋闽. LED倒装芯片的图形化衬底及制备方法. CN: CN110098297A, 2019-08-06.
[42] 闫建昌, 刘春岩, 郭亚楠, 崔志勇, 王兵. 紫外LED抗静电硅基板的封装结构. CN: CN108091646A, 2018-05-29.
[43] 谢海忠, 闫建昌, 魏学成, 魏同波, 宋昌斌, 张韵, 王军喜, 李晋闽. 芯片尺寸级深紫外发光二极管共晶封装方法. CN: CN107256911A, 2017-10-17.
[44] 郭亚楠, 张韵, 闫建昌, 王军喜, 李晋闽. 高光出射效率的LED芯片及其制备方法. CN: CN107068826A, 2017-08-18.
[45] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN106517410A, 2017-03-22.
[46] 谢海忠, 闫建昌, 魏学成, 孙莉莉, 宋昌斌, 张韵, 王军喜, 李晋闽. 一种杀菌消毒的装置. CN: CN206337054U, 2017-07-18.
[47] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. CN: CN106441485A, 2017-02-22.
[48] 闫建昌, 谢海忠, 王军喜, 魏学成, 孙莉莉, 张韵, 李晋闽. 一种具有紫外杀菌消毒功能的水表. 中国: CN206440330U, 2017-08-25.
[49] 闫建昌, 孙莉莉, 张韵, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN106784180A, 2017-05-31.
[50] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 采用侧壁等离激元技术提高紫外发光二极管效率的方法. CN: CN104465905A, 2015-03-25.
[51] 胡强, 李晋闽, 王军喜, 曾一平, 路红喜, 伊晓燕, 马平, 魏同波, 闫建昌, 纪攀峰. 一种MOCVD设备中的石墨盘. CN: CN104357805A, 2015-02-18.
[52] 张连, 张韵, 闫建昌, 王军喜, 李晋闽. 一种具有极化诱导掺杂高阻层的GaN基HEMT结构及生长方法. CN: CN104241352A, 2014-12-24.
[53] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 一种紫外发光二极管器件的制备方法. CN: CN103956414A, 2014-07-30.
[54] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 紫外发光二极管器件的制备方法. CN: CN103943737B, 2016-09-28.
[55] 姬小利, 闫建昌, 郭金霞, 张连, 杨富华, 段瑞飞, 王军喜, 曾一平, 王国宏, 李晋闽. 提高发光效率的极性面氮化镓基发光器件. CN: CN103887385A, 2014-06-25.
[56] 闫建昌, 王军喜, 张韵, 丛培沛, 孙莉莉, 董鹏, 田迎冬, 李晋闽. 氮化物半导体发光二极管外延片、器件及其制备方法. CN: CN103811609A, 2014-05-21.
[57] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 可杀菌消毒的多功能餐盒. CN: CN203692762U, 2014-07-09.
[58] 张韵, 孙莉莉, 闫建昌, 王军喜, 李晋闽. 多功能LED手电筒. CN: CN203743880U, 2014-07-30.
[59] 田迎冬, 董鹏, 张韵, 闫建昌, 孙莉莉, 王军喜, 李晋闽. 氮化镓激光器腔面的制作方法. CN: CN103701037A, 2014-04-02.
[60] 张连, 曾建平, 魏同波, 闫建昌, 王军喜, 李晋闽. 可调控能带的UV LED多量子阱结构装置及生长方法. CN: CN103325903A, 2013-09-25.
[61] 董鹏, 王军喜, 闫建昌, 张韵, 曾建平, 孙莉莉, 李晋闽. 在蓝宝石衬底上制备微纳米图形的方法. CN: CN103311097A, 2013-09-18.
[62] 孙莉莉, 张韵, 闫建昌, 王军喜, 李晋闽. 一种金属纳米圆环的制备方法. CN: CN103268910A, 2013-08-28.
[63] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 紫外共振腔发光二极管. CN: CN103236479A, 2013-08-07.
[64] 孙莉莉, 闫建昌, 董鹏, 魏同波, 王军喜, 李晋闽. 一种可提高LED发光效率的金属纳米颗粒的制备方法. CN: CN103337564A, 2013-10-02.
[65] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 一种具有DBR高反射结构的紫外发光二极管及其制备方法. CN: CN103199164A, 2013-07-10.
[66] 曾建平, 闫建昌, 王军喜, 丛培沛, 孙莉莉, 董鹏, 李晋闽. 一种具有高反射薄膜的紫外发光二极管及其制作方法. CN: CN103165775A, 2013-06-19.
[67] 郭金霞, 闫建昌",null,null,null,null,null,"王军喜. 高压发光二极管芯片及其制造方法. CN: CN103187494A, 2013-07-03.
[68] 孙莉莉, 闫建昌, 魏同波, 王军喜, 李晋闽. 紫外发光二极管结构. CN: CN103137822A, 2013-06-05.
[69] 朱邵歆, 闫建昌, 杨华, 张宁, 司朝, 曾建平, 李晋闽, 王军喜. 用于可见光通信的通信系统和便携装置. CN: CN202652224U, 2013-01-02.
[70] 朱邵歆, 闫建昌, 杨华, 张宁, 司朝, 曾建平, 李晋闽, 王军喜. 便携装置的可见光通信系统与方法. CN: CN102801471A, 2012-11-28.
[71] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 李晋闽. 在低位错GaN纳米柱上外延LED的方法. CN: CN102683523A, 2012-09-19.
[72] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 用于GaN基LED的ITO纳米碗阵列的粗化方法. CN: CN102694088A, 2012-09-26.
[73] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 具有空气桥结构发光二极管的制作方法. CN: CN102683522A, 2012-09-19.
[74] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 蓝宝石纳米碗阵列图形衬底的制作方法. CN: CN102691102A, 2012-09-26.
[75] 吴奎, 魏同波, 蓝鼎, 闫建昌, 刘喆, 王军喜, 张逸韵, 李晋闽. 基于湿法剥离垂直结构发光二极管的制作方法. CN: CN102709411A, 2012-10-03.
[76] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 张逸韵, 李璟, 李晋闽. 纳米柱发光二极管的制作方法. CN: CN102709410A, 2012-10-03.
[77] 董鹏, 闫建昌, 王军喜, 孙莉莉, 曾建平, 丛培沛, 李晋闽. 具有反射欧姆接触电极的紫外发光二极管的基片. CN: CN102709429A, 2012-10-03.
[78] 董鹏, 王军喜, 闫建昌, 张逸韵, 孙莉莉, 曾建平, 李晋闽. 提高紫外发光二极管出光效率的方法. CN: CN102655194A, 2012-09-05.
[79] 郭金霞, 闫建昌, 伊晓燕, 田婷, 詹腾, 赵勇兵, 宋昌斌, 王军喜. 高压发光二极管芯片及其制造方法. CN: CN103258836A, 2013-08-21.
[80] 吴奎, 魏同波, 闫建昌, 刘喆, 王军喜, 李晋闽. 低位错氮化镓的生长方法. CN: CN102409406A, 2012-04-11.
[81] 孙莉莉, 闫建昌, 王军喜. 发光二极管的制备方法. CN: CN102760799A, 2012-10-31.
[82] 孙莉莉, 闫建昌, 王军喜. 发光二极管的制备方法. CN: CN102130230A, 2011-07-20.
[83] 孙莉莉, 闫建昌, 王军喜, 刘乃鑫, 魏同波, 魏学成, 马平, 刘喆, 曾一平, 王国宏, 李晋闽. 适用于氮化物LED外延生长的纳米级图形衬底的制备方法. CN: CN101969088A, 2011-02-09.
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出版信息

   
发表论文
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[108] Zeng, Jianping, Yan, Jianchang, Wang, Junxi, Cong, Peipei, Li, Jinmin, Sun, Shuaishuai, Tao, Ye, Parbrook, PJ, Martin, RW, Halsall, MP. Photoluminescence properties of Al-rich AlXGa1-XN grown on AlN/sapphire template by MOCVD. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4. 2012, 第 2 作者9(3-4): 733-736, 
[109] Yun Lijun, Wei Tongbo, Yan Jianchang, Liu Zhe, Wang Junxi, Li Jinmin. MOCVD epitaxy of InAlN on different templates. 半导体学报[J]. 2011, 第 3 作者32(9): 093001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=39277484.
[110] 贠利君, 魏同波, 刘乃鑫, 闫建昌, 王军喜, 李晋闽. InAlN薄膜MOCVD外延生长研究. 半导体技术[J]. 2011, 第 4 作者36(8): 609-613, http://lib.cqvip.com/Qikan/Article/Detail?id=38766890.
[111] Yan, Jianchang, Wang, Junxi, Cong, Peipei, Sun, Lili, Liu, Naixin, Liu, Zhe, Zhao, Chao, Li, Jinmin. Improved performance of UV-LED by p-AlGaN with graded composition. PHYSICA STATUS SOLIDI(C) CURRENT TOPICS IN SOLID STATE PHYSICS[J]. 2011, 第 1 作者8(2): 461-463, http://ir.semi.ac.cn/handle/172111/23149.
[112] 刘乃鑫, 王军喜, 闫建昌, 刘喆, 阮军, 李晋闽. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD. 半导体学报[J]. 2009, 第 3 作者21-25, http://lib.cqvip.com/Qikan/Article/Detail?id=32337819.
[113] Liu Naixin, Wang Junxi, Yan Jianchang, Liu Zhe, Ruan Jun, Li Jinmin. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQW grown by MOCVD. 半导体学报[J]. 2009, 第 3 作者21-25, http://lib.cqvip.com/Qikan/Article/Detail?id=32337819.
[114] 闫建昌, 王军喜, 刘乃鑫, 刘喆, 阮军, 李晋闽. High quality AlGaN grown on a high temperature AlN template by MOCVD. 半导体学报[J]. 2009, 第 1 作者13-16, http://lib.cqvip.com/Qikan/Article/Detail?id=31757812.
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[119] 王军喜, 闫建昌, 郭亚楠, 张韵, 田迎冬, 朱邵歆, 陈翔, 孙莉莉, 李晋闽. 氮化物深紫外LED研究新进展. 中国科学: 物理学 力学 天文学. 第 2 作者45: https://www.sciengine.com/doi/10.1360/SSPMA2015-00026.
发表著作
(1) III-Nitrides Light Emitting Diodes: Technology and Applications, Springer, 2020-10, 第 其他 作者
(2) 氮化物深紫外发光材料及器件, 科学出版社, 2021-03, 第 3 作者

科研活动

   
科研项目
( 1 ) 北京市科技新星计划交叉课题-闫建昌+田磊, 负责人, 地方任务, 2023-10--2025-10
( 2 ) 大功率深紫外AlGaN基LED发光材料与器件产业化关键技术, 负责人, 国家任务, 2022-11--2025-10
( 3 ) 闫建昌青促会优秀会员, 负责人, 中国科学院计划, 2022-03--2024-12
( 4 ) 氮化物半导体紫外发光材料与器件, 负责人, 国家任务, 2021-01--2023-12
( 5 ) 氮化镓基高效深紫外LED芯片技术, 负责人, 地方任务, 2020-07--2022-06
( 6 ) 北京市科技新星计划项目, 负责人, 地方任务, 2018-01--2020-12
( 7 ) 中国科学院青年创新促进会人才项目, 负责人, 中国科学院计划, 2017-01--2020-12
( 8 ) 固态紫外光源高Al 组分结构材料的外延及产业化技术研究, 参与, 国家任务, 2016-07--2021-06
参与会议
(1)Generation of multiple ultraviolet optical tweezers with monolithic AlN metasurfaces   2023-11-12
(2)AlN极性调控与深紫外LED器件   第五届全国宽禁带半导体学术会议   2023-10-24
(3)高质量AlN极性调控与深紫外LED器件研制   第十六届全国发光学学术会议   2023-09-22
(4)深紫外 LED 収光效率提升研究   第十七届全国 MOCVD 学术会议   2022-08-16

指导学生

已指导学生

谷文  硕士研究生  085208-电子与通信工程  

现指导学生

余筱彬  硕士研究生  080903-微电子学与固体电子学  

任睿  博士研究生  080903-微电子学与固体电子学  

呼昕炜  硕士研究生  080903-微电子学与固体电子学  

周淼  硕士研究生  085400-电子信息