Advanced fabrication, design, characterization techniques for III-nitride compound semiconductor electronic devices

1, High performance GaN-based power electronic and RF/microwave devices, including enhancement-mode (E-mode) technique, design of high-frequency GaN-based electronic devices, CMOS-process-compatible fabrication technique, novel structure GaN-based HEMTs and MIS-HEMTs

2, Device physics in III-nitride compound semiconductor electronic devices, such as interface engineering, reliability, and advanced characterization techniques

PhD of Semiconductor (condensed matter) Physics, Peking University (PKU)

                                                          Sep. 2004 - Jul. 2009

       Bachelor of Electronic Science and Technology, Dalian University of Technology (DUT)

                                                                 Sep. 2000 - Jul. 2004

Professor in R&D Center of High Frequency & High Voltage Devices and Integrated Technology ,

Institute of Microelectronics, Chinese Academy of Sciences (IMECAS)

                                                         April. 2017 – present

Associate Professor in R&D Center of High Frequency & High Voltage Devices and Integrated Technology ,

Institute of Microelectronics, Chinese Academy of Sciences (IMECAS)

                                                         Aug. 2012 –Mar. 2017

Postdoctoral Research Associate in Department of Electronic and Computer Engineering,

The Hong Kong University of Science and Technology (HKUST)

                                                               Aug. 2009 - Aug. 2012

   

1.        S. Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y. Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang, S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao, and K. J. Chen, “High-Temperature Low-Damage Gate Recess Technique and Ozone-Assisted ALD-grown Al₂O₃ Gate Dielectric for High-Performance Normally-Off GaN MIS-HEMTs,” IEEE International Electron Devices Meeting (IEDM-2014), pp. 17.4.1–17.4.4.

2.        S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang, J. Fan, J. Shi, K. Wei, Y. Zheng, H. Gao, Q. Sun, M. Wang, B. Shen, and K. J. Chen, “Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices,” IEEE Trans. Electron Devices, vol. 65, no. 1, pp. 207–214, Jan. 2018.

3.        S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang, Q. Bao, K. Wei, Y. Zheng, C. Zhao, H. Gao, Q. Sun, Z. Zhang, and Kevin J. Chen, “High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure,” IEEE Electron Device Letters, vol. 37, no. 12, pp. 1617–1620, Dec. 2016.

4.        S. Huang, X. Liu, J. Zhang, K. Wei, G. Liu, X. Wang, Y. Zheng, H. Liu, Z. Jin, C. Zhao, C. Liu, S. Liu, S. Yang, J. Zhang, Y. Hao, and K. J. Chen, “High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique,” IEEE Electron Device Letters, vol. 36, no. 8, pp. 754–756, Aug. 2015.

5.        S. Huang, K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X. Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen, “High-fMAX High Johnson’s Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiNx passivation,” IEEE Electron Device Letters, vol. 35, no. 3, pp. 315–317, Mar. 2014.

6.        S. Huang, Q. M. Jiang, S. Yang, Z. Tang, and K. J. Chen, “Mechanism of PEALD-grown AlN passivation of AlGaN/GaN HEMTs: Compensation of interface trap states by polarization charges,” IEEE Electron Device Letters, vol. 34, no. 2, p. 193, Feb. 2013.

7.        S. Huang, Q. M. Jiang, S. Yang, C. H. Zhou, and K. J. Chen, “Effective Passivation of AlGaN/GaN HEMTs by ALD-grown AlN Thin Film,” IEEE Electron Device Letters, vol. 33, no. 4, p. 516, Mar. 2012.

8.        S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Threshold voltage instability in Al₂O₃/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors,” Japanese Journal of Applied Physics. vol. 50, no. 11, p. 110202, Oct. 2011.

9.        S. Huang, B. Shen, M. J. Wang, F. J. Xu, Y. Wang, H. Y. Yang, F. Lin, L. Lu, Z. P. Chen, Z. X. Qin, Z. J. Yang, and G. Y. Zhang, “Current transport mechanism of Au/Ni/GaN Schottky diodes at high temperatures,” Applied Physics Letters, vol. 91, no. 7, p. 072109, Aug. 2007.

10.    S. Huang, X. Liu, K. Wei, G. Liu, X. Wang, B. Sun, X. Yang, B. Shen, C. Liu, S. Liu, M. Hua, S. Yang, and K. J. Chen, “O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors,” Applied Physics Letters, vol. 106, no. 3, p. 033507, Jan. 2015.

11.    S. Huang, H. W. Chen, and K. J. Chen, “Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of Al_xGa_1-xN∕GaN heterostructures,” Applied Physics Letters, vol. 96, no. 23, p. 233510, Jun. 2010.

12.    S. Huang, B. Shen, F. Lin, N. Ma, F. J. Xu, Z. L. Miao, J. Song, L. Lu, F. Liu, Y. Wang, Z. X. Qin, Z. J. Yang, and G. Y. Zhang, “Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures,” Applied Physics Letters, vol. 93, no. 17, p. 172102, Oct. 2008.

13.    S. Huang, K. Wei, Z. Tang, S. Yang, C. Liu, L. Guo, B. Shen, J. Zhang, X. Kong, G. Liu, Y. Zheng, X. Liu, and K. J. Chen, “Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation,” Journal of Applied Physics. vol. 114, no. 14, p. 144509, Oct. 2013.

14.    S. Huang, B. Shen, F.-J. Xu, F. Lin, Z.-L. Miao, J. Song, L. Lu, L.-B. Cen, L.-W. Sang, Z.-X. Qin, Z.-J. Yang, and G.-Y. Zhang, “Study of the leakage current mechanism in Schottky contacts to Al_0.25Ga_0.75N∕GaN heterostructures with AlN interlayers,” Semiconductor Science and Technology, vol. 24, no. 5, p. 055005, May 2009.

15.    S. Huang, H. W. Chen, and K. J. Chen, “Surface properties of Al_xGa_1-xN/GaN heterostructures treated by fluorine plasma: an XPS study,” Physica Status Solidi C, vol. 8, no. 7-8, p. 2200, Apr. 2011.

16.    S. Huang, S. Yang, J. Roberts, and K. J. Chen, “Characterization of V_th-instability in Al₂O₃/GaN/AlGaN/GaN MIS-HEMTs by quasi-static C-V measurement,” Physica Status Solidi C, vol. 9, no. 3-4, p. 923, Mar. 2012.

17.    X. Wang, S. Huang, Y. Zheng, K. Wei, X. Chen, G. Liu, T. Yuan, W. Luo, L. Pang, H. Jiang, J. Li, C. Zhao, H. Zhang, and X. Liu, “Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer,” IEEE Electron Device Letters, vol. 36, no. 7, pp. 666–668, Jul. 2015.

18.    J. Zhang, S. Huang, Q. Bao, X. Wang, K. Wei, Y. Zheng, Y. Li, C. Zhao, X. Liu, Q. Zhou, W. Chen, and B. Zhang, “Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing,” Applied Physics Letters, vol. 107, no. 26, p. 262109, Dec. 2015.

19.    Y. Shi, S. Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, and Xinyu Liu, “Normally-Off GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiN_x Passivation and High-Temperature Gate Recess,” IEEE Transactions on Electron Devices, vol. 63, no. 2, pp. 614–619, Feb. 2016.

20.    Xinyu Liu, Sen Huang, Q. Bao, Xinhua Wang, K. Wei, Y. Li, J. Xiang, C. Zhao, X. Yang, B. Shen, and S. Guo, “Evolution of traps in TiN/O 3 -sourced Al 2 O 3 /GaN gate structures with thermal annealing temperature,” J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom., vol. 36, no. 2, p. 22202, Mar. 2018.

21.    Z. Liu, S. Huang, Q. Bao, X. Wang, K. Wei, H. Jiang, H. Cui, J. Li, C. Zhao, X. Liu, J. Zhang, Q. Zhou, W. Chen, B. Zhang, and L. Jia, “Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs,” J. Vac. Sci. Technol. B, vol. 34, no. 4, p. 41202, Jul. 2016.

22.    Q. Bao, S. Huang, X. Wang, K. Wei, Y. Zheng, Y. Li, C. Yang, H. Jiang, J. Li, A. Hu, X. Yang, B. Shen, X. Liu, and C. Zhao, “Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure,” Semiconductor Science and Technology, vol. 31, no. 6, p. 65014, Jun. 2016.

23.    H. Sen, Y. Shu, T. ZhiKai, H. MengYuan, W. XinHua, W. Ke, B. QiLong, L. XinYu, and C. Jing, “Device physics towards high performance GaN-based power electronics,” Sci. Sin. Phys. Mech. Astron., vol. 46, no. 10, p. 107307, 2016.

已指导学生

王元琨  硕士研究生  085209-集成电路工程  

现指导学生

向兰兰  硕士研究生  085208-电子与通信工程  

李敏  硕士研究生  085208-电子与通信工程  

赵瑞  硕士研究生  085208-电子与通信工程  

邓可心  硕士研究生  080903-微电子学与固体电子学  

施雯  硕士研究生  080903-微电子学与固体电子学  

刘洋  硕士研究生  085209-集成电路工程  

田野  硕士研究生  085209-集成电路工程  

郭富强  硕士研究生  085209-集成电路工程