基本信息
卢年端  男  硕导  中国科学院微电子研究所
电子邮件: lunianduan@ime.ac.cn
通信地址: 北京,朝阳区,北土城西路3号
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
080502-材料学
085209-集成电路工程
招生方向
新型纳米存储器件与集成技术
半导体物理,第一性原理

教育背景

2006-09--2010-07   北京工业大学   博士研究生

工作经历

   
工作简历
2010-10~2012-07,清华大学, 博士后
社会兼职
2016-09-19-今,Scientific Reports, Editor

专利与奖励

   
专利成果
[1] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 制备共面型铟镓锌氧薄膜晶体管的方法及薄膜晶体管. CN: [[[CN111696868A]]], [[["2020-09-22"]]].
[2] 耿玓, 黄施捷, 苏悦, 季寒赛, 陈倩, 卢年端, 李泠, 刘明. 一种像素电路、像素电路的驱动方法及显示装置. CN: CN113096589A, 2021-07-09.
[3] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置芯片、系统和方法. CN: CN107704285B, 2021-01-05.
[4] 李泠, 周政, 王嘉玮, 卢年端. 一种单分子层半导体高聚物薄膜的制备方法. CN: CN112062993A, 2020-12-11.
[5] 卢年端, 李泠, 吴全潭, 姜文峰, 王嘉玮, 耿玓, 刘明. 一种模拟人工感知神经元的方法及电路. CN: CN111985633A, 2020-11-24.
[6] 卢年端, 李泠, 吴全潭, 王嘉玮, 耿玓, 刘明. 一种对检测到的信号进行处理的方法及电路. CN: CN111933197A, 2020-11-13.
[7] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 铟镓锌氧薄膜晶体管的掺杂方法. CN: CN111710609A, 2020-09-25.
[8] 李泠, 段新绿, 卢年端, 耿玓, 刘明. 共面铟镓锌氧薄膜晶体管及其制备方法. CN: CN111682074A, 2020-09-18.
[9] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种二维材料超晶格器件及制作方法. CN: CN111653613A, 2020-09-11.
[10] 李泠, 黄施捷, 卢年端, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种双栅薄膜晶体管及其制作方法. CN: CN111640673A, 2020-09-08.
[11] 卢年端, 姜文峰, 李泠, 耿玓, 王嘉玮, 李蒙蒙, 刘明. 一种形成金属引线的方法及二维材料器件. CN: CN111640662A, 2020-09-08.
[12] 卢年端, 李泠, 耿玓, 刘明. 一种用于测量二维半导体材料的磁阻的装置及其制作方法. CN: CN108807211B, 2020-08-18.
[13] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 可应用于同时发光的像素电路及其驱动方法、显示装置. CN: CN111489696A, 2020-08-04.
[14] 李泠, 苏悦, 耿玓, 卢年端, 刘明. 具有电压补偿功能的像素电路及其驱动方法、显示面板. CN: CN111489697A, 2020-08-04.
[15] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 一种显示阵列的驱动电路及驱动方法. CN: CN111445842A, 2020-07-24.
[16] 卢年端, 段新绿, 刘明, 李泠, 杨冠华, 陆丛研, 史学文, 王嘉玮, 耿玓, 揣喜臣, 姜文峰. 光学晶体管及其制备方法. CN: CN111048622A, 2020-04-21.
[17] 卢年端, 魏巍, 李泠, 刘明. 一种优化氧化物基的阻变存储器性能的方法. CN: CN107221599B, 2020-03-10.
[18] 卢年端, 李泠, 刘明, 刘琦. 一种阻变存储器的设计方法及装置. CN: CN108807456B, 2020-01-21.
[19] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路. 中国: CN108806606B, 20190927.
[20] 耿玓, 苏悦, 李泠, 卢年端, 刘明. 像素补偿电路. CN: CN108806606B, 2019-09-27.
[21] Lu, Nianduan, Sun, Pengxiao, Li, Ling, Liu, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing. Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory. CN: US10418549(B2), 2019-09-17.
[22] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种薄膜晶体管及制备方法. 中国: CN110190131A, 2019-08-30.
[23] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种薄膜晶体管及制备方法. CN: CN110190131A, 2019-08-30.
[24] 卢年端, 李泠, 耿玓, 刘明. 纳米级晶体管及其制备方法. CN: CN110176489A, 2019-08-27.
[25] 卢年端, 李泠, 耿玓, 王嘉玮, 刘明. 一种半导体器件及制备方法. CN: CN110164965A, 2019-08-23.
[26] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. 中国: CN110061063A, 2019-07-26.
[27] 卢年端, 揣喜臣, 杨冠华, 李泠, 耿玓, 刘明. 场效应晶体管制备方法及场效应晶体管. CN: CN110061063A, 2019-07-26.
[28] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器的制备方法. CN: CN109920911A, 2019-06-21.
[29] 卢年端, 姜文峰, 李泠, 耿玓, 刘琦, 吕杭炳, 刘明. 阻变存储器. CN: CN109904314A, 2019-06-18.
[30] 卢年端, 李泠, 揣喜臣, 杨冠华, 耿玓, 刘明. 基于二维材料的晶体管及其制备方法. CN: CN109671781A, 2019-04-23.
[31] 卢年端, 马尚, 李泠, 耿玓, 刘琦, 刘明. 一种阻变存储器. CN: CN109585648A, 2019-04-05.
[32] 卢年端, 马尚, 李泠, 耿玓, 刘明. 一种阻变存储器的制备方法. CN: CN109524544A, 2019-03-26.
[33] 刘琦, 赵晓龙, 刘明, 刘森, 龙世兵, 吕杭炳, 卢年端, 王艳, 张康玮. 一种双极型阻变存储器及其制备方法. CN: CN105895800B, 2019-03-15.
[34] 卢年端, 李泠, 刘明. 测量有机半导体状态密度的方法. 中国: CN104777359B, 2018.02.13.
[35] 卢年端, 李泠, 刘明. 测量半导体材料无序度的方法. 中国: CN104792810B, 2018.02.09.
[36] 卢年端, 李泠, 刘明. 一种用于获取表面势的方法及装置. 中国: CN108804807A, 2018-11-13.
[37] 卢年端, 李泠, 刘明, 高南, 徐光伟, 王伟. 赛贝克系数测量结构、测量结构制备方法及测量方法. 中国: CN104900557B, 2018-11-06.
[38] 汪令飞, 王伟, 徐光伟, 李泠, 刘明, 卢年端. 石墨烯晶体管的小信号模型的截止频率的计算方法. 中国: CN105224717B, 2018-07-27.
[39] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 对FPGA配置数据进行升级的电路及方法. 中国: CN108319465A, 2018-07-24.
[40] 谢元禄, 刘明, 张坤, 呼红阳, 霍长兴, 刘璟, 毕津顺, 王艳, 卢年端. 现场可编程门阵列多版本配置的芯片及系统. 中国: CN207264382U, 2018-04-20.
[41] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 改善三维集成阻变存储器耐久性的方法. 中国: CN106919729A, 2017-07-04.
[42] 卢年端, 孙鹏霄, 李泠, 刘明, 刘琦, 吕杭炳, 龙世兵. 三维集成阻变存储器的热效应评估及降低热串扰的方法. 中国: CN106919723A, 2017-07-04.
[43] 卢年端, 李泠, 刘明, 孙鹏霄. 一种提取金属氧化物基阻变存储器载流子输运通道的方法. 中国: CN104361908A, 2015-02-18.
[44] 卢年端, 李泠, 刘明, 孙鹏霄. 一种表征有机半导体器件驰豫现象的方法. 中国: CN104049196A, 2014.09.17.
[45] 卢年端, 李泠, 刘明, 闫小兵, 吕杭炳, 孙鹏霄. 一种测量阻变存储器状态密度的方法. 中国: CN104051022A, 2014.09.17.
[46] 卢年端, 李泠, 刘明, 孙鹏霄, 王明. 一种分析阻变存储器电流波动性的方法. 中国: CN104200845A, 2014-12-10.
[47] 卢年端, 李泠, 刘明, 孙鹏霄, 王明, 刘琦. 一种测量阻变存储器激活能的方法. 中国: CN103928057A, 2014-07-16.
[48] 李亮亮, 卢年端, 蔡坚, 王谦. 一种基于基板刻蚀方式的焊球凸点封装技术方法. 中国: CN102709197A, 2012-10-03.
[49] 卢年端, 李亮亮, 蔡坚, 李燕秋. Co-P薄膜的制备方法. 中国: CN102181897A, 2011-09-14.
[50] 宋晓艳, 闫相全, 卢年端, 张久兴. Sm-Co二元合金非晶块体材料的制备方法. 中国: CN100575516, 2009-12-30.
[51] 宋晓艳, 卢年端, 张久兴, 于成伟. 单相Sm 2 Co 17 纳米晶块体材料的制备方法. 中国: CN101319284, 2008-12-10.
[52] 宋晓艳, 于成伟, 李尔东, 卢年端. 一种铝纳米粉末的制备方法. 中国: CN101293283, 2008-10-29.
[53] 宋晓艳, 张久兴, 李尔东, 岳明, 卢年端. 晶态与非晶态结构及尺寸可调控的纳米纯钐的制备方法. 中国: CN1312302, 2007-04-25.

出版信息

   
发表论文
[1] Su, Yue, Geng, Di, Chen, Qian, Ji, Hansai, Li, Mei, Shang, Guangliang, Liu, Libin, Duan, Xinlv, Chuai, Xichen, Huang, Shijie, Lu, Nianduan, Li, Ling. Novel TFT-Based emission driver in high performance AMOLED display applications. ORGANIC ELECTRONICS[J]. 2021, 93: http://dx.doi.org/10.1016/j.orgel.2021.106160.
[2] Wang, Hong, Yan, Xiaobing, Wang, Shufang, Lu, Nianduan. High-Stability Memristive Devices Based on Pd Conductive Filaments and Its Applications in Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 13(15): 17844-17851, http://dx.doi.org/10.1021/acsami.1c01076.
[3] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming. Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 2049-2055, http://dx.doi.org/10.1109/TED.2021.3054359.
[4] Bai, Ziheng, Lu, Nianduan, Wang, Jiawei, Geng, Ding, Liu, Dongyang, Xiao, Kui, Li, Ling. A novel extraction method of device parameters for thin-film transistors (TFTs). PHYSICS LETTERS A[J]. 2021, 403: http://dx.doi.org/10.1016/j.physleta.2021.127386.
[5] Jiang, Wenfeng, Chen, Kaifei, Wang, Jiawei, Geng, Di, Lu, Nianduan, Li, Ling. Understanding the adsorption behavior of small molecule in MoS2 device based on first-principles calculations. MATERIALS RESEARCH EXPRESS[J]. 2021, 8(5): http://dx.doi.org/10.1088/2053-1591/ac021d.
[6] Wu, Quantan, Dang, Bingjie, Lu, Congyan, Xu, Guangwei, Yang, Guanhua, Wang, Jiawei, Chuai, Xichen, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling. Spike Encoding with Optic Sensory Neurons Enable a Pulse Coupled Neural Network for Ultraviolet Image Segmentation. NANO LETTERS[J]. 2020, 20(11): 8015-8023, https://www.webofscience.com/wos/woscc/full-record/WOS:000592495700029.
[7] Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming, IEEE. A New Surface Potential Based Compact Model for Independent Dual Gate a-IGZO TFT: Experimental Verification and Circuit Demonstration. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)null. 2020, [8] Shi, Xuewen, Lu, Congyan, Duan, Xinlv, Chen, Qian, Ji, Hansai, Su, Yue, Chuai, Xichen, Liu, Dongyang, Zhao, Ying, Yang, Guanhua, Wang, Jiawei, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming. Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 67(4): 1606-1612, https://www.webofscience.com/wos/woscc/full-record/WOS:000522559000033.
[9] Yang, GuanHua, Wang, JiaWei, Niu, JieBin, Chuai, XiChen, Lu, CongYan, Geng, Di, Lu, NianDuan, Li, Ling, Liu, Ming. Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY[J]. 2020, 63(1): 126-129, http://lib.cqvip.com/Qikan/Article/Detail?id=7100982446.
[10] Guanhua Yang, Yan Shao, Jiebin Niu, Xiaolei Ma, Congyan Lu, Wei Wei, Xichen Chuai, Jiawei Wang, Jingchen Cao, Hao Huang, Guangwei Xu, Xuewen Shi, Zhuoyu Ji, Nianduan Lu, Di Geng, Jing Qi, Yun Cao, Zhongliu Liu, Liwei Liu, Yuan Huang, Lei Liao, Weiqi Dang, Zhengwei Zhang, Yuan Liu, Xidong Duan, Jiezhi Chen, Zhiqiang Fan, Xiangwei Jiang, Yeliang Wang, Ling Li, HongJun Gao, Xiangfeng Duan, Ming Liu. Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. Nature Communications[J]. 2020, 11(1): 1-7, https://doaj.org/article/a6b33dda656847e5be549e70ef98e1e1.
[11] 卢年端. Understanding the transport mechanism of organic-inorganic perovskite solar cells: The effect of exciton or free-charge on diffusion lengt. Organic Electronics. 2019, [12] Lu, Nianduan, Wang, Jiawei, Geng, Di, Li, Ling, Liu, Ming. Understanding the transport mechanism of organic-inorganic perovskite solar cells: The effect of exciton or free-charge on diffusion length. ORGANIC ELECTRONICS[J]. 2019, 66: 163-168, http://dx.doi.org/10.1016/j.orgel.2018.12.007.
[13] Ul Huzaibi, Hassan, Shi, Xuewen, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming. Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors. AIP ADVANCES[J]. 2019, 9(2): https://doaj.org/article/752395d12ad54ad6a265889a3243dbf7.
[14] Chuai, Xichen, Yang, Guanhua, Wei, Wei, Wang, Jiawei, Shi, Xuewen, Lu, Congyan, Zhao, Ying, Su, Yue, Wu, Quantan, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming. Optimization of Electrical Properties of MoS2 Field-Effect Transistors by Dipole Layer Coulombic Interaction With Trap States. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS[J]. 2019, 13(7): [15] Wu, Quantan, Lu, Congyan, Wang, Hong, Cao, Jingchen, Yang, Guanhua, Wang, Jiawei, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming. A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(1): 24-27, [16] Wu, Quantan, Yang, Guanhua, Lu, Congyan, Xu, Guangwei, Wang, Jiawei, Dang, Bingjie, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling, Liu, Ming. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2019, 66(9): 4087-4091, https://www.webofscience.com/wos/woscc/full-record/WOS:000482583200060.
[17] Yang, Guanhua, Chuai, Xichen, Niu, Jiebin, Wang, Jiawei, Shi, Xuewen, Wu, Quantan, Su, Yue, Zhao, Ying, Liu, Dongyang, Xu, Guangwei, Lu, Congyan, Geng, Di, Lu, Nianduan, Li, Ling, Liu, Ming. Anomalous Positive Bias Stress Instability in MoS2 Transistors With High-Hydrogen-Concentration SiO2 Gate Dielectrics. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(2): 232-235, https://www.webofscience.com/wos/woscc/full-record/WOS:000457606300019.
[18] Zhou, Zhenyu, Yan, Xiaobing, Zhao, Jianhui, Lu, Chao, Ren, Deliang, Lu, Nianduan, Wang, Jingjuan, Zhang, Lei, Li, Xiaoyan, Wang, Hong, Zhao, Mengliu. Synapse behavior characterization and physical mechanism of a TiN/SiOx/p-Si tunneling memristor device. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2019, 7(6): 1561-1567, https://www.webofscience.com/wos/woscc/full-record/WOS:000459572600010.
[19] Bai, Ziheng, Shi, Xuewen, Wang, Jiawei, Lu, Nianduan, Duan, Xinlv, Yang, Guanhua, Dong, Chaofang, Xiao, Kui, Li, Ling. Comparative study on extraction methods of threshold voltage for thin-film transistors. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY[J]. 2019, 27(12): 816-821, https://www.webofscience.com/wos/woscc/full-record/WOS:000546571300008.
[20] Shi, Xuewen, Lu, Congyan, Xu, Guangwei, Yang, Guanhua, Lu, Nianduan, Ji, Zhuoyu, Geng, Di, Li, Ling, Liu, Ming. Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy. APPLIED PHYSICS LETTERS[J]. 2019, 114(7): http://dx.doi.org/10.1063/1.5057719.
[21] Su, Yue, Geng, Di, Gong, Yuxin, Yang, Guanhua, Chuai, Xichen, Zhao, Ying, Shi, Xuewen, Zhang, Lining, Lu, Nianduan, Li, Ling, Liu, Ming. Dynamic Time Evolutionary Aging Analysis for Device-Circuit Lifetime Estimation of Thin-Film Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2019, 40(9): 1439-1442, [22] Banerjee, Writam, Lu, Nianduan, Yang, Yang, Li, Ling, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Ming. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer-Neldel Rule. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2018, 65(3): 957-962, http://dx.doi.org/10.1109/TED.2017.2788460.
[23] Lu Nianduan, Wei Wei, Chuai Xichen, Mei Yuhan, Li Ling, Liu Ming, IEEE. Adsorbed property of boron nitride nanotube (BNNT) device: A study of first-principles calculations. 2018 9TH INTHERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN FOR THIN-FILM TRANSISTORS (CAD-TFT)null. 2018, 15-15, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000458325100011.
[24] Lu, Nianduan, Jiang, Wenfeng, Wu, Quantan, Geng, Di, Li, Ling, Liu, Ming. A Review for Compact Model of Thin-Film Transistors (TFTs). MICROMACHINESnull. 2018, 9(11): https://doaj.org/article/dbe58d2873574e9fb3d6f00b59dafd28.
[25] Xu, Guangwei, Gao, Nan, Lu, Congyan, Wang, Wei, Ji, Zhuoyu, Bi, Chong, Han, Zhiheng, Lu, Nianduan, Yang, Guanhua, Li, Yuan, Liu, Qi, Li, Ling, Liu, Ming. Bulk-Like Electrical Properties Induced by Contact-Limited Charge Transport in Organic Diodes: Revised Space Charge Limited Current. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000431958800001.
[26] 卢年端. Synapse behavior characterization and physics mechanism of a TiN/SiOx/p-Si tunneling memristor device. Journal of Materials Chemistry C. 2018, [27] Cao, Jingchen, Liu, Wei, Wu, Quantan, Yang, Guanhua, Lu, Nianduan, Ji, Zhuoyu, Geng, Di, Li, Ling, Liu, Ming. A New Velocity Saturation Model of MoS2 Field-Effect Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 39(6): 893-896, https://www.webofscience.com/wos/woscc/full-record/WOS:000437086800028.
[28] Wang, Jiawei, Ji, Zhuoyu, Yang, Guanhua, Chuai, Xichen, Liu, Fengjing, Zhou, Zheng, Lu, Congyan, Wei, Wei, Shi, Xuewen, Niu, Jiebin, Wang, Liang, Wang, Hong, Chen, Jiezhi, Lu, Nianduan, Jiang, Chao, Li, Ling, Liu, Ming. Charge Transfer within the F(4)TCNQ-MoS2 van der Waals Interface: Toward Electrical Properties Tuning and Gas Sensing Application. ADVANCED FUNCTIONAL MATERIALS[J]. 2018, 28(51): https://www.webofscience.com/wos/woscc/full-record/WOS:000453604700023.
[29] Wang, Wei, Xu, Guangwei, Chowdhury, M Delwar H, Wang, Hong, Um, Jae Kwang, Ji, Zhuoyu, Gao, Nan, Zong, Zhiwei, Bi, Chong, Lu, Congyan, Lu, Nianduan, Banerjee, Writam, Feng, Jiafeng, Li, Ling, Kadashchuk, Andrey, Jang, Jin, Liu, Ming. Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors. PHYSICAL REVIEW B[J]. 2018, 98(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000454154700006.
[30] Lu, Nianduan, Li, Ling, Geng, Di, Liu, Ming. A review for polaron dependent charge transport in organic semiconductor. ORGANIC ELECTRONICSnull. 2018, 61: 223-234, http://dx.doi.org/10.1016/j.orgel.2018.05.053.
[31] Wu, Quantan, Wang, Jiawei, Cao, Jingchen, Lu, Congyan, Yang, Guanhua, Shi, Xuewen, Chuai, Xichen, Gong, Yuxin, Su, Yue, Zhao, Ying, Lu, Nianduan, Geng, Di, Wang, Hong, Li, Ling, Liu, Ming. Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000452617800020.
[32] Cao, Jingchen, Peng, Songang, Liu, Wei, Wu, Quantan, Li, Ling, Geng, Di, Yang, Guanhua, Ji, Zhouyu, Lu, Nianduan, Liu, Ming. A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications. JOURNAL OF APPLIED PHYSICS[J]. 2018, 123(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000425192500016.
[33] Lu, Congyan, Ji, Zhuoyu, Xu, Guangwei, Lu, Nianduan, Li, Ling, Liu, Ming. Charge-transfer complex modified bottom electrodes for high performance low voltage organic field-effect transistors and circuits. ORGANIC ELECTRONICS[J]. 2017, 49: 206-211, http://dx.doi.org/10.1016/j.orgel.2017.06.047.
[34] 李泠, 刘明, 卢年端. Thermoelectric Effect and Application of Organic Semiconductors. 2017, http://159.226.55.106/handle/172511/17763.
[35] 李泠, 刘明, 卢年端. Erratum: Universal carrier thermoelectric-transport model based on percolation theory in organic Semiconductors. PHYSICAL REVIEW B[J]. 2017, http://159.226.55.106/handle/172511/18141.
[36] Wang, Wei, Wang, Long, Xu, Guangwei, Gao, Nan, Wang, Lingfei, Ji, Zhuoyu, Lu, Congyan, Lu, Nianduan, Li, Ling, Liu, Miwng. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT). CHEMICAL PHYSICS LETTERS[J]. 2017, 681: 36-39, http://dx.doi.org/10.1016/j.cplett.2017.05.044.
[37] Liu Ming, Chuai Xichen, Lu Nianduan, Wang Yan, Li Ling, Wei Wei. Simulation of doping effect for HfO2-based RRAM based on first-principles calculations. SISPAD 2017null. 2017, http://159.226.55.106/handle/172511/18283.
[38] Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming. An analytical Seebeck coefficient model for disordered organic semiconductors. PHYSICS LETTERS A[J]. 2017, 381(40): 3441-3444, http://dx.doi.org/10.1016/j.physleta.2017.09.006.
[39] 李泠, 卢年端, 刘明. Correction: A review of carrier thermoelectric-transport theory in organic semiconductors. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2017, [40] Lu, Nianduan, Wang, Lingfei, Li, Ling, Liu, Ming. A review for compact model of graphene field-effect transistors. CHINESE PHYSICS Bnull. 2017, 26(3): https://www.webofscience.com/wos/woscc/full-record/WOS:000396129200044.
[41] Lu Nianduan, Wang Lingfei, Li Ling, Liu Ming. A review for compact model of graphene field-effect transistors. Chin. Phys. B[J]. 2017, http://159.226.55.106/handle/172511/18143.
[42] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. A unified description of thermal transport performance in disordered organic semiconductors. ORGANIC ELECTRONICS[J]. 2017, 41: 294-300, http://dx.doi.org/10.1016/j.orgel.2016.11.019.
[43] Lu, Nianduan, Gao, Nan, Li, Ling, Liu, Ming. Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2017, 96(16): 165205-1-165205-7, https://www.webofscience.com/wos/woscc/full-record/WOS:000414095000002.
[44] Lu, Nianduan, Li, Ling, Liu, Ming. A review of carrier thermoelectric-transport theory in organic semiconductors (vol 18, pg 19503, 2016). PHYSICAL CHEMISTRY CHEMICAL PHYSICSnull. 2017, 19(24): 16283-16283, https://www.webofscience.com/wos/woscc/full-record/WOS:000403965500076.
[45] Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming. Carrier thermoelectric transport model for black phosphorus field-effect transistors. CHEMICAL PHYSICS LETTERS[J]. 2017, 678: 271-274, http://dx.doi.org/10.1016/j.cplett.2017.04.067.
[46] 卢年端, 高南, 刘明. A UNIFED DESCRIPTION OF THERMAL TRANSPORT PERFORMANCE In DISORDERED ORGANIC SEMICONDUCTORS. Org. Electr.[J]. 2016, http://159.226.55.106/handle/172511/16250.
[47] 卢年端, 宗旨威, 刘琦, 姬濯宇, 刘明. A new analytical electro-thermal model in 3D resistive switching memory arrays. SCIENTIA SINICA Physica, Mechanica & Astronomica[J]. 2016, 46(10): 107312-1, http://159.226.55.106/handle/172511/16248.
[48] Lu Nianduan, Sun Pengxiao, Liu Qi, Lu: Hangbing, Long Shibing, Liu Ming. Thermal effect on endurance performance for 3-dimensional RRAM crossbar array. Chinese Physics B[J]. 2016, http://159.226.55.106/handle/172511/16247.
[49] Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming. Understanding electrical-thermal transport characteristics of organic semiconductors: Violation of Wiedemann-Franz law. JOURNAL OF APPLIED PHYSICS[J]. 2016, 120(19): http://159.226.55.106/handle/172511/16243.
[50] 卢年端, 宗旨威, 李泠, 刘琦, 裘德龙, 姬濯宇, 刘明. A new analytical electro-thermal model in 3D resistive switching memory arrays. SCIENTIA SINICA Physica, Mechanica & Astronomica[J]. 2016, 46(10): 107312-1, http://159.226.55.106/handle/172511/16248.
[51] Han, Zhiheng, Xu, Guangwei, Wang, Wei, Lu, Congyan, Lu, Nianduan, Ji, Zhuoyu, Li, Ling, Liu, Ming. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy. APPLIED PHYSICS LETTERS[J]. 2016, 109(2): http://159.226.55.106/handle/172511/16249.
[52] Gao, Nan, Li, Ling, Lu, Nianduan, Xie, Changqing, Liu, Ming, Baessler, Heinz. Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime. PHYSICAL REVIEW B[J]. 2016, 94(7): http://159.226.55.106/handle/172511/16246.
[53] Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming. Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors. ORGANIC ELECTRONICS[J]. 2016, 29: 27-32, http://dx.doi.org/10.1016/j.orgel.2015.11.028.
[54] Luo, Qing, Xu, Xiaoxin, Liu, Hongtao, Lv, Hangbing, Gong, Tiancheng, Long, Shibing, Liu, Qi, Sun, Haitao, Banerjee, Writam, Li, Ling, Gao, Jianfeng, Lu, Nianduan, Liu, Ming. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays. NANOSCALE[J]. 2016, 8(34): 15629-15636, http://dx.doi.org/10.1039/C6NR02029A.
[55] Wang, Lingfei, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Liu, Ming. Analytical carrier density and quantum capacitance for graphene. APPLIED PHYSICS LETTERS[J]. 2016, 108(1): http://159.226.55.106/handle/172511/16251.
[56] Lu, Nianduan, Sun, Pengxiao, Li, Ling, Liu, Qi, Long, Shibing, Lv, Hangbing, Liu, Ming. Thermal effect on endurance performance of 3-dimensional RRAM crossbar array. CHINESE PHYSICS B[J]. 2016, 25(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000375681800039.
[57] Lu Nianduan, Liu Ming. A review of carrier thermoelectric-transport theory in organic semiconductors. Phys.Chem.Chem.Phys.[J]. 2016, http://159.226.55.106/handle/172511/16242.
[58] Liu, Sen, Lu, Nianduan, Zhao, Xiaolong, Xu, Hui, Banerjee, Writam, Lv, Hangbing, Long, Shibing, Li, Qingjiang, Liu, Qi, Liu, Ming. Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory. ADVANCED MATERIALS[J]. 2016, 28(48): 10623-+, http://159.226.55.106/handle/172511/16231.
[59] 汪令飞, 卢年端, 徐光伟, 姬濯宇, 王伟, 宗旨威. An improved cut-off frequency model with a modified small-signal equivalent Graphene circuit in Field-Effect Transistors. IEEE Electron Device Letters[J]. 2016, http://159.226.55.106/handle/172511/16256.
[60] Lu, Nianduan, Li, Ling, Liu, Ming. A review of carrier thermoelectric-transport theory in organic semiconductors. PHYSICAL CHEMISTRY CHEMICAL PHYSICSnull. 2016, 18(29): 19503-19525, https://www.webofscience.com/wos/woscc/full-record/WOS:000380343100001.
[61] Wang, Lingfei, Peng, Songang, Wang, Wei, Xu, Guangwei, Ji, Zhuoyu, Lu, Nianduan, Li, Ling, Jin, Zhi, Liu, Ming. Surface-potential-based physical compact model for graphene field effect transistor. JOURNAL OF APPLIED PHYSICS[J]. 2016, 120(8): http://159.226.55.106/handle/172511/16253.
[62] Lu, Nianduan, Li, Ling, Liu, Ming. Universal carrier thermoelectric-transport model based on percolation theory in organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 91(19): http://www.irgrid.ac.cn/handle/1471x/1092088.
[63] Li, Ling, Gao, Nan, Lu, Nianduan, Liu, Ming, Baessler, Heinz. Spin diffusion in disordered organic semiconductors. PHYSICAL REVIEW B[J]. 2015, 92(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000367374700001.
[64] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Liu, Ming. A novel method of identifying the carrier transport path in metal oxide resistive random access memory. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2015, 48(6): http://dx.doi.org/10.1088/0022-3727/48/6/065101.
[65] Sun, Pengxiao, Lu, Nianduan, Li, Ling, Li, Yingtao, Wang, Hong, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Su, Liu, Ming. Thermal crosstalk in 3-dimensional RRAM crossbar array. SCIENTIFIC REPORTS[J]. 2015, 5: http://www.irgrid.ac.cn/handle/1471x/1092084.
[66] Lu, Nianduan, Li, Ling, Banerjee, Writam, Sun, Pengxiao, Gao, Nan, Liu, Ming. Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(4): http://www.irgrid.ac.cn/handle/1471x/1092087.
[67] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Wang, Ming, Liu, Qi, Lv, Hangbing, Long, Shibing, Banerjee, Writam, Liu, Ming. Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory. MATERIALS RESEARCH EXPRESS[J]. 2015, 2(4): http://dx.doi.org/10.1088/2053-1591/2/4/046304.
[68] Zong, Zhiwei, Li, Ling, Jang, Jin, Lu, Nianduan, Liu, Ming. Analytical surface-potential compact model for amorphous-IGZO thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2015, 117(21): http://dx.doi.org/10.1063/1.4922181.
[69] Xu, Guangwei, Lu, Nianduan, Wang, Wei, Gao, Nan, Ji, Zhuoyu, Li, Ling, Liu, Ming. Universal description of exciton diffusion length in organic photovoltaic cell. ORGANIC ELECTRONICS[J]. 2015, 23: 53-56, http://dx.doi.org/10.1016/j.orgel.2015.04.006.
[70] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Lv, Hangbing, Liu, Ming, Liu, Su. Physical model for electroforming process in valence change resistive random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2015, 14(1): 146-150, https://www.webofscience.com/wos/woscc/full-record/WOS:000350554200016.
[71] Li Ling. Univeral description of exciton diffusion length in organic photovoltaic cell. Organic Electronics. 2015, [72] Li Ling. Thermal crosstalk in 3-dimensional RRAM crossbar arrays. Scientific Reports. 2015, [73] Wang, Long, Lu, Nianduan, Li, Ling, Ji, Zhuoyu, Banerjee, Writam, Liu, Ming. Compact model for organic thin-film transistor with Gaussian density of states. AIP ADVANCES[J]. 2015, 5(4): http://dx.doi.org/10.1063/1.4918622.
[74] Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors. ORGANIC ELECTRONICS[J]. 2015, 16(16): 113-117, http://dx.doi.org/10.1016/j.orgel.2014.11.003.
[75] Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, Ming. Resistance-switching mechanism of SiO2:Pt-based Mott memory. JOURNAL OF APPLIED PHYSICS[J]. 2015, 118(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000367535100049.
[76] Sun, Pengxiao, Li, Ling, Lu, Nianduan, Li, Yingtao, Wang, Ming, Xie, Hongwei, Liu, Su, Liu, Ming. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. JOURNAL OF COMPUTATIONAL ELECTRONICS[J]. 2014, 13(2): 432-438, http://dx.doi.org/10.1007/s10825-013-0552-x.
[77] Li, Ling, Lu, Nianduan, Liu, Ming, Baessler, Heinz. General Einstein relation model in disordered organic semiconductors under quasiequilibrium. PHYSICAL REVIEW B[J]. 2014, 90(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000346376500001.
[78] 龙世兵, 刘明, 谢宏伟, 刘琦, 吕杭炳, 卢年端, 王明, 李颖弢. 新型阻变存储技术. 2014, http://159.226.55.106/handle/172511/18305.
[79] 刘明. Thermoelectric Seebeck effect in oxide-based resistive switching memory. NATURE COMMUNICATIONS[J]. 2014, 5: 4598.1-4598.6, http://dx.doi.org/10.1038/ncomms5598.
[80] Li, Ling, Lu, Nianduan, Liu, Ming. Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps. IEEE ELECTRON DEVICE LETTERS[J]. 2014, 35(2): 226-228, http://www.irgrid.ac.cn/handle/1471x/1092033.
[81] Li, Ling, Lu, Nianduan, Liu, Ming. Physical origin of nonlinear transport in organic semiconductor at high carrier densities. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000344589400089.
[82] Li, Ling, Lu, Nianduan, Liu, Ming. Limitation of the concept of transport energy in disordered organic semiconductors. EPL[J]. 2014, 106(1): 17005-1-17005-5, https://www.webofscience.com/wos/woscc/full-record/WOS:000335657300016.
[83] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Banerjee, Writam, Liu, Ming. A unified physical model of Seebeck coefficient in amorphous oxide semiconductor thin-film transistors. JOURNAL OF APPLIED PHYSICS[J]. 2014, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000342833700070.
[84] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Short-circuit current model of organic solar cells. CHEMICAL PHYSICS LETTERS[J]. 2014, 614(614): 27-30, http://dx.doi.org/10.1016/j.cplett.2014.08.070.
[85] Niu, Jiebin, Lu, Nianduan, Li, Ling, Liu, Ming. Polaron effect dependence of thermopower in organic semiconductors. PHYSICS LETTERS A[J]. 2014, 378(48): 3579-3581, http://www.irgrid.ac.cn/handle/1471x/1092027.
[86] Wang, Wei, Li, Ling, Ji, Zhuoyu, Ye, Tianchun, Lu, Nianduan, Li, Zhigang, Li, Dongmei, Liu, Ming. Modified Transmission Line Model for Bottom-Contact Organic Transistors. IEEE ELECTRON DEVICE LETTERS[J]. 2013, 34(10): 1301-1303, https://www.webofscience.com/wos/woscc/full-record/WOS:000325186600032.
[87] Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming. Charge carrier relaxation model in disordered organic semiconductors. AIP ADVANCES[J]. 2013, 3(11): http://www.irgrid.ac.cn/handle/1471x/1092001.
[88] Yang Donghua, Lu Nianduan, Li Liangliang, IEEE. Wettability of Sn-Bi and Sn-Ag-Cu Lead-Free Solder Pastes on Electroplated Co-P Films. 2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)null. 2013, 1686-1691, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000332764900258.
[89] Lu, Nianduan, Yang, Donghua, Li, Liangliang. Interfacial reaction between Sn-Ag-Cu solder and Co-P films with various microstructures. ACTA MATERIALIA[J]. 2013, 61(12): 4581-4590, https://www.webofscience.com/wos/woscc/full-record/WOS:000321086100026.
[90] Li, Ling, Lu, Nianduan, Liu, Ming. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors. APPLIED PHYSICS LETTERS[J]. 2013, 103(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000329973800085.
[91] 李定朋, 宋晓艳, 张哲旭, 卢年端, 乔印凯, 刘雪梅. 单相Sm5C02纳米晶合金的制备及其性能研究. 金属学报. 2012, 48(10): 1248-1252, http://lib.cqvip.com/Qikan/Article/Detail?id=43591720.
[92] Li, Ling, Lu, Nianduan, Liu, Ming. Influence of mobility on the dissociation probability of electron-hole pair in hopping system. APPLIED PHYSICS LETTERS[J]. 2012, 101(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000306944700102.
[93] Lu, Nianduan, Cai, Jian, Li, Liangliang. Dependence of interfacial adhesion of Co-P film on its microstructure. SURFACE & COATINGS TECHNOLOGY[J]. 2012, 206(23): 4822-4827, http://dx.doi.org/10.1016/j.surfcoat.2012.05.017.
[94] Lu, Nianduan, Li, Yanqiu, Cai, Jian, Li, Liangliang. Synthesis and Characterization of Ultrasonic-Assisted Electroplated Co-P Films With Amorphous and Nanocrystalline Structures. IEEE TRANSACTIONS ON MAGNETICS[J]. 2011, 47(10): 3799-3802, https://www.webofscience.com/wos/woscc/full-record/WOS:000296418200380.
[95] Lu, Nianduan, Song, Xiaoyan, Liu, Xuemei, Zhang, Jiuxing. Preparation and magnetic properties of amorphous and nanocrystalline Sm2Co17 alloys. INTERMETALLICS[J]. 2010, 18(6): 1180-1184, https://www.webofscience.com/wos/woscc/full-record/WOS:000278040800009.
[96] Lu, Nianduan, Song, Xiaoyan, Zhang, Jiuxing. Crystal structure and magnetic properties of ultrafine nanocrystalline SmCo3 compound. NANOTECHNOLOGY[J]. 2010, 21(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000274936700031.
[97] 于成伟, 宋晓艳, 卢年端, 李尔东. 金属铝纳米晶块体材料的制备与性能表征. 材料工程[J]. 2008, 251-253,256, http://lib.cqvip.com/Qikan/Article/Detail?id=28465070.
[98] 卢年端, 宋晓艳, 张久兴. 单相纳米晶Sm2Co17合金的制备与性能表征. 材料工程[J]. 2008, 200-203, http://lib.cqvip.com/Qikan/Article/Detail?id=28465057.
[99] 卢年端, 宋晓艳, 张久兴, 李尔东, 岳明, 曾宏, 闫相全. 惰性气体蒸发—冷凝法制备尺寸可控的纯稀土纳米粉末. 粉末冶金技术[J]. 2007, 25(6): 424-429, http://lib.cqvip.com/Qikan/Article/Detail?id=26183418.
[100] 李尔东, 宋晓艳, 张久兴, 卢年端. 晶态与非晶态双相结构的纯稀土纳米块体材料及其制备机制. 科学通报[J]. 2006, 51(20): 2448-2452, 
发表著作
(1) 新型阻变存储技术, 科学出版社, 2014-08, 第 5 作者
(2) Thermoelectric effect and application of organic semiconductors, INTECH, 2016-12, 第 1 作者

科研活动

   
科研项目
( 1 ) 阻变存储器三维集成中的器件模型, 主持, 国家级, 2016-01--2019-12
( 2 ) 基于跃迁理论的阻变存储器载流子输运特性的研究, 主持, 国家级, 2013-01--2016-12
( 3 ) 高密度存储与磁电子材料关键技术, 参与, 国家级, 2014-01--2016-12
( 4 ) 高通量自动流程材料集成计算算法与软件及其在先进 存储材料中的应用, 参与, 国家级, 2017-07--2021-06
( 5 ) 纳米存储器三维集成中的基础研究, 参与, 国家级, 2016-07--2021-06
参与会议
(1)Simulation of doping effect for HfO2-based RRAM based on first-principles calculations   2017-09-07
(2)Thermal effect and Compact model in three-dimensional (3D) RRAM arrays   卢年端   2016-09-05
(3)Carrier thermoelectric transport in organic semiconductor based on hopping theory   卢年端   2015-06-14
(4)A Novel Approach to Identify the Carrier Transport Path and Its Correlation to the Current Variation in RRAM   卢年端   2015-05-17

指导学生

现指导学生

揣喜臣  硕士研究生  085209-集成电路工程