基本信息
邵龑 男 中国科学院深圳先进技术研究院
电子邮件： yan.shao@siat.ac.cn
通信地址： 广东省深圳市南山区西丽大学城学苑大道1068号
邮政编码： 518055
电子邮件： yan.shao@siat.ac.cn
通信地址： 广东省深圳市南山区西丽大学城学苑大道1068号
邮政编码： 518055
研究领域
主要从事半导体材料、工艺与器件的研究，重点关注新型光电探测器的开发
教育背景
2015-09--2019-06 复旦大学 博士研究生
出版信息
发表论文
[1] Wang, Jiangxiang, Zhang, Baohui, Luo, Jingting, Fu, Chen, Tao, Ran, Yang, Lei, Li, Honglang, Shao, Yan, Xiao, Qingquan, Xie, Quan. High performance NIR photodetector with mixed halogen passivation via precursor engineering. OPTIK[J]. 2022, 第 8 作者266: http://dx.doi.org/10.1016/j.ijleo.2022.169597.
[2] Fu, EnBo, Liu, Yu, Hou, XiangRui, Feng, Ye, Yang, ChunLei, Shao, Yan. Visible-Light-Stimulated Synaptic Phototransistors Based on CdSe Quantum Dot/In-Ga-Zn-O Hybrid Channels. NANOSCALE RESEARCH LETTERS[J]. 2022, 第 6 作者 通讯作者 17(1): http://dx.doi.org/10.1186/s11671-022-03739-8.
[3] Dong, XiaoFei, Zhao, Yun, Zheng, TingTing, Li, Xue, Wang, ChengWei, Li, WeiMin, Shao, Yan, Li, Yan. Coexistence of Bipolar Resistive Switching and the Negative Differential Resistance Effect from a Kesterite Memristor. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2021, 第 7 作者 通讯作者 125(1): 923-930, http://dx.doi.org/10.1021/acs.jpcc.0c08205.
[4] MeiNaZhang, YanShao, XiaoLinWang, XiaohanWu, WenJunLiu, ShiJinDing. Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels. Chinese Physics B[J]. 2020, 第 2 作者29(7): 78503-078503, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab9738.
[5] Wang, XiaoLin, Shao, Yan, Wu, Xiaohan, Zhang, MeiNa, Li, Lingkai, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation. RSC ADVANCES[J]. 2020, 第 2 作者10(6): 3572-3578, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000508849900059.
[6] Li, Lingkai, Shao, Yan, Wang, Xiaolin, Wu, Xiaohan, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 第 2 作者67(1): 105-112, https://www.webofscience.com/wos/woscc/full-record/WOS:000506578900016.
[7] Sui, Fan, Pan, Mingyue, Wang, Zhengyan, Chen, Ming, Li, Wenjie, Shao, Yan, Li, Weimin, Yang, Chunlei. Quantum yield enhancement of Mn-doped CsPbCl3 perovskite nanocrystals as luminescent down-shifting layer for CIGS solar cells. SOLAR ENERGY[J]. 2020, 第 6 作者 通讯作者 206: 473-478, http://dx.doi.org/10.1016/j.solener.2020.05.070.
[8] Shao, Yan, Wu, Xiaohan, Zhang, MeiNa, Liu, WenJun, Ding, ShiJin. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 1 作者14(1): https://doaj.org/article/0f250bbe787b48528e654c737888932c.
[9] Shao Yan, Ding ShiJin. Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. ACTA PHYSICA SINICA[J]. 2018, 第 1 作者67(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000443195000027.
[10] Ma, Qian, Shao, Yan, Wang, Y P, Zheng, H M, Zhu, B, Liu, W J, Ding, ShiJin, Zhang, D W. Rapid Improvement in Thin Film Transistors With Atomic-Layer Deposited InOx Channels via O-2 Plasma Treatment. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 2 作者39(11): 1672-1675, https://www.webofscience.com/wos/woscc/full-record/WOS:000448539100012.
[11] Ma, Qian, Zheng, HeMei, Shao, Yan, Zhu, Bao, Liu, WenJun, Ding, ShiJin, Zhang, David Wei. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors. NANOSCALE RESEARCH LETTERS[J]. 2018, 第 3 作者13(1): https://doaj.org/article/8a03493bfaca4b88a084287f9eebaa5b.
[12] Qian, ShiBing, Shao, Yan, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 第 2 作者64(7): 3023-3027, https://www.webofscience.com/wos/woscc/full-record/WOS:000403452900037.
[13] Qian, ShiBing, Wang, YongPing, Shao, Yan, Liu, WenJun, Ding, ShiJin. Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory. NANOSCALE RESEARCH LETTERS[J]. 2017, 第 3 作者12(1): http://dx.doi.org/10.1186/s11671-017-1925-z.
[2] Fu, EnBo, Liu, Yu, Hou, XiangRui, Feng, Ye, Yang, ChunLei, Shao, Yan. Visible-Light-Stimulated Synaptic Phototransistors Based on CdSe Quantum Dot/In-Ga-Zn-O Hybrid Channels. NANOSCALE RESEARCH LETTERS[J]. 2022, 第 6 作者 通讯作者 17(1): http://dx.doi.org/10.1186/s11671-022-03739-8.
[3] Dong, XiaoFei, Zhao, Yun, Zheng, TingTing, Li, Xue, Wang, ChengWei, Li, WeiMin, Shao, Yan, Li, Yan. Coexistence of Bipolar Resistive Switching and the Negative Differential Resistance Effect from a Kesterite Memristor. JOURNAL OF PHYSICAL CHEMISTRY C[J]. 2021, 第 7 作者 通讯作者 125(1): 923-930, http://dx.doi.org/10.1021/acs.jpcc.0c08205.
[4] MeiNaZhang, YanShao, XiaoLinWang, XiaohanWu, WenJunLiu, ShiJinDing. Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels. Chinese Physics B[J]. 2020, 第 2 作者29(7): 78503-078503, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/ab9738.
[5] Wang, XiaoLin, Shao, Yan, Wu, Xiaohan, Zhang, MeiNa, Li, Lingkai, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation. RSC ADVANCES[J]. 2020, 第 2 作者10(6): 3572-3578, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000508849900059.
[6] Li, Lingkai, Shao, Yan, Wang, Xiaolin, Wu, Xiaohan, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2020, 第 2 作者67(1): 105-112, https://www.webofscience.com/wos/woscc/full-record/WOS:000506578900016.
[7] Sui, Fan, Pan, Mingyue, Wang, Zhengyan, Chen, Ming, Li, Wenjie, Shao, Yan, Li, Weimin, Yang, Chunlei. Quantum yield enhancement of Mn-doped CsPbCl3 perovskite nanocrystals as luminescent down-shifting layer for CIGS solar cells. SOLAR ENERGY[J]. 2020, 第 6 作者 通讯作者 206: 473-478, http://dx.doi.org/10.1016/j.solener.2020.05.070.
[8] Shao, Yan, Wu, Xiaohan, Zhang, MeiNa, Liu, WenJun, Ding, ShiJin. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric. NANOSCALE RESEARCH LETTERS[J]. 2019, 第 1 作者14(1): https://doaj.org/article/0f250bbe787b48528e654c737888932c.
[9] Shao Yan, Ding ShiJin. Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. ACTA PHYSICA SINICA[J]. 2018, 第 1 作者67(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000443195000027.
[10] Ma, Qian, Shao, Yan, Wang, Y P, Zheng, H M, Zhu, B, Liu, W J, Ding, ShiJin, Zhang, D W. Rapid Improvement in Thin Film Transistors With Atomic-Layer Deposited InOx Channels via O-2 Plasma Treatment. IEEE ELECTRON DEVICE LETTERS[J]. 2018, 第 2 作者39(11): 1672-1675, https://www.webofscience.com/wos/woscc/full-record/WOS:000448539100012.
[11] Ma, Qian, Zheng, HeMei, Shao, Yan, Zhu, Bao, Liu, WenJun, Ding, ShiJin, Zhang, David Wei. Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors. NANOSCALE RESEARCH LETTERS[J]. 2018, 第 3 作者13(1): https://doaj.org/article/8a03493bfaca4b88a084287f9eebaa5b.
[12] Qian, ShiBing, Shao, Yan, Liu, WenJun, Zhang, David Wei, Ding, ShiJin. Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2017, 第 2 作者64(7): 3023-3027, https://www.webofscience.com/wos/woscc/full-record/WOS:000403452900037.
[13] Qian, ShiBing, Wang, YongPing, Shao, Yan, Liu, WenJun, Ding, ShiJin. Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory. NANOSCALE RESEARCH LETTERS[J]. 2017, 第 3 作者12(1): http://dx.doi.org/10.1186/s11671-017-1925-z.