从事InP基HEMT器件的研究开发工作，具有丰富的器件工艺开发经验和扎实的器件物理理论基础。目前的主要研究方向是提高HEMT器件性能，减小器件噪声系数，提高高频特性等。

招收对InP基器件物理、器件工艺、器件模型、器件数学仿真等方面有浓厚兴趣的硕士研究生。

080903-微电子学与固体电子学

InP器件研究，InP电路研究
二维材料器件与集成研究

2005-09--2010-07   曼彻斯特大学   博士学历
2000-09--2003-07   北京大学物理学院   理学硕士学位
1996-09--2000-07   北京大学物理学院   学士学位

2012年加入中国科学院微电子研究所高频高压中心InP化合物半导体课题组至今。现任高级工程师（副研），硕士导师，中心器件物理表征测试平台负责人。

2012-05~2023-03,中科院微电子研究所, 高级工程师（副研）

   

（ 1 ） 一种提高碳基半导体器件迁移率的衬底处理方法, 发明专利, 2013, 第 1 作者, 专利号: CN103456604A

（ 2 ） 一种碳基半导体器件制备工艺中对衬底进行预处理的方法, 发明专利, 2013, 第 1 作者, 专利号: CN103456607A

（ 3 ） 一种可调控碳基半导体器件载流子浓度的表面处理方法, 发明专利, 2013, 第 1 作者, 专利号: CN103441223A

   

[1] Deng, Kexin, Wang, Xinhua, Huang, Sen, Jiang, Qimeng, Yin, Haibo, Fan, Jie, Jing, Guanjun, Wang, Yingjie, Luan, Tiantian, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Liu, Xinyu. Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition. APPLIED SURFACE SCIENCE[J]. 2023, 607: 154937-, http://dx.doi.org/10.1016/j.apsusc.2022.154937.
[2] Deng, Kexin, Wang, Xinhua, Huang, Sen, Li, Pengfei, Jiang, Qimeng, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Liu, Xinyu. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 15(20): 25058-25065, http://dx.doi.org/10.1021/acsami.3c03094.
[3] Peng, Songang, Zhang, Jing, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Wei, Shuhua. Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. CRYSTALS[J]. 2022, 12(2): http://dx.doi.org/10.3390/cryst12020184.
[4] Yao, Yixu, Huang, Sen, Jiang, Qimeng, Wang, Xinhua, Bi, Lan, Shi, Wen, Guo, Fuqiang, Luan, Tiantian, Fan, Jie, Yin, Haibo, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Li, Yankui, Sun, Qian, Liu, Xinyu. Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy. IEEE ELECTRON DEVICE LETTERS[J]. 2022, 43(2): 200-203, [5] Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Niu, Jiebin, Zhu, Chaoyi, Zhang, Yanhui, Yu, Guanghui. The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor. ADVANCED ENGINEERING MATERIALS[J]. 2022, 24(4): http://dx.doi.org/10.1002/adem.202100935.
[6] Deng, Kexin, Wang, Xinhua, Huang, Sen, Yin, Haibo, Fan, Jie, Shi, Wen, Guo, Fuqiang, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Jiang, Haojie, Wang, Wenwu, Liu, Xinyu. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures. APPLIED SURFACE SCIENCE[J]. 2021, 542: http://dx.doi.org/10.1016/j.apsusc.2020.148530.
[7] Huang, Xinnan, Shi, Jingyuan, Yao, Yao, Peng, Songang, Zhang, Dayong, Jin, Zhi. Layer thickness influenced irradiation effects of proton beam on MoS2 field effect transistors. NANOTECHNOLOGY[J]. 2021, 32(13): http://dx.doi.org/10.1088/1361-6528/abd129.
[8] Huang, Xinnan, Yao, Yao, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Jin, Zhi. Effects of Charge Trapping at the MoS2-SiO(2)Interface on the Stability of Subthreshold Swing of MoS(2)Field Effect Transistors. MATERIALS[J]. 2020, 13(13): https://www.webofscience.com/wos/woscc/full-record/WOS:000552318100001.
[9] Zhao, Rui, Huang, Sen, Wang, Xinhua, Li, Yuchen, Shi, Jingyuan, Zhang, Yichuan, Fan, Jie, Yin, Haibo, Chen, Xiaojuan, Wei, Ke, Wu, Shan, Yang, Xuelin, Shen, Bo, Liu, Xinyu. Interface charge engineering in down-scaled AlGaN (< 6nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. APPLIED PHYSICS LETTERS[J]. 2020, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000520479800001.
[10] Zhang, Dayong, Jin, Zhi, Shi, Jingyuan, Peng, Songang, Huang, Xinnan, Yao, Yao, Li, Yankui, Ding, Wuchang, Wang, Dahai. A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection. RSC ADVANCES[J]. 2020, 10(6): 3314-3318, https://www.webofscience.com/wos/woscc/full-record/WOS:000508849900031.
[11] Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Niu, Jiebin, Huang, Xinnan, Yao, Yao, Zhang, Yanhui, Yu, Guanghui. How Do Contact and Channel Contribute to the Dirac Points in Graphene Field-Effect Transistors?. ADVANCED ELECTRONIC MATERIALS[J]. 2018, 4(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000441125200018.
[12] Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Zhang, Yanhui, Yu, Guanghui. Evidence of electric field-tunable tunneling probability in graphene and metal contact. NANOSCALE[J]. 2017, 9(27): 9520-9528, http://dx.doi.org/10.1039/c7nr02502e.
[13] Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Mao, Dacheng, Wang, Shaoqing, Yu, Guanghui. Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor. ACS APPLIED MATERIALS & INTERFACES[J]. 2017, 9(8): 6661-6665, https://www.webofscience.com/wos/woscc/full-record/WOS:000395494200002.
[14] Zhang, Dayong, Jin, Zhi, Shi, Jingyuan, Wang, Xuanyun, Peng, Songang, Wang, Shaoqing. The electrochemical transfer of CVD-graphene using agarose gel as solid electrolyte and mechanical support layer. CHEMICAL COMMUNICATIONS[J]. 2015, 51(14): 2987-2990, https://www.webofscience.com/wos/woscc/full-record/WOS:000349323500058.
[15] Jin, Zhi, Ma, Peng, Wang, Shaoqing, Peng, Songang, Zhang, Dayong, Shi, Jingyuan, Niu, Jiebin, Yu, Guanghui, Wang, Xuanyun, Li, Mei. Hydroxyl-free buffered dielectric for graphene field-effect transistors. CARBON[J]. 2015, 86: 264-271, http://dx.doi.org/10.1016/j.carbon.2015.01.030.
[16] Zhang, Dayong, Jin, Zhi, Shi, Jingyuan, Ma, Peng, Peng, Songang, Liu, Xinyu, Ye, Tianchun. The Anistropy of Field Effect Mobility of CVD Graphene Grown on Copper Foil. SMALL[J]. 2014, 10(9): 1761-1764, http://www.irgrid.ac.cn/handle/1471x/1089102.
[17] Yu, LP, Shi, JY, Wang, YZ, Zhang, H. Study of different type of dislocations in GaN thin films. JOURNAL OF CRYSTAL GROWTH[J]. 2004, 268(3-4): 484-488, http://dx.doi.org/10.1016/j.jcrysgro.2004.04.077.
[18] Shi, JY, Yu, LP, Wang, YZ, Zhang, GY, Zhang, H. Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN. APPLIED PHYSICS LETTERS[J]. 2002, 80(13): 2293-2295, https://www.webofscience.com/wos/woscc/full-record/WOS:000174623300019.

   

（ 1 ） 石墨烯电子器件与集成技术研究, 参与, 国家任务, 2011-01--2016-12
（ 2 ） 石墨烯在射频器件中的前瞻性研究, 参与, 中国科学院计划, 2012-05--2014-12
（ 3 ） Graphene场效应晶体管及其集成技术研究, 参与, 国家任务, 2012-01--2016-12
（ 4 ） 太赫兹多用户射频收发系统研制, 参与, 地方任务, 2021-09--2024-09
（ 5 ） 全二维材料场效应晶体管器件研究, 参与, 国家任务, 2015-01--2017-12