140100-集成电路科学与工程

半导体材料与器件、异质集成技术
材料与器件可靠性
低维半导体材料与器件

2007-09--2012-07   北京大学   研究生理学博士学位
2003-09--2007-07   南开大学   本科学士学位

   

2020-07~现在, 中国科学院微电子研究所, 副研究员
2017-07~2020-07,中国科学院微电子研究所, 助理研究员
2012-07~2017-03,京东方科技集团股份有限公司, 高级研究员
2007-09~2012-07,北京大学, 研究生理学博士学位
2003-09~2007-07,南开大学, 本科学士学位

   

（1） 二零二二年度微电子研究所“先进工作者”, 特等奖, 研究所（学校）, 2022

（ 1 ） 一种自动校验数据的SRAM安全存储系统及其方法, 2021, 第 4 作者, 专利号: CN112908394A

（ 2 ） 一种非对称SRAM存储单元和SRAM存储器, 2021, 第 4 作者, 专利号: CN112802510A

（ 3 ） 一种SRAM单元结构、SRAM存储器以及上电初始化方法, 2021, 第 4 作者, 专利号: CN112802509A

（ 4 ） 一种单光子光源的制备方法及元器件, 2019, 第 1 作者, 专利号: CN109713094A

（ 5 ） 一种可检真空度的真空玻璃及系统, 2019, 第 1 作者, 专利号: CN109665725A

   

（1） Swift heavy ion irradiation-driven energy band engineering and its profound influence on the photoresponse of ��-Ga2O3 ultraviolet photodetectors, Applied Physics Letters, 2024, 
（2） Investigation on performance degradation mechanism of GaN p���i���n diode under proton irradiation, Applied Physics Letters, 2023, 
（3） Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device, IEEE Transactions on Nuclear Science, 2023, 
（4） Investigation on performance degradation mechanism of GaN p���i���n diode under proton irradiation, Applied Physics Letters, 2023, 
（5） Displacement Damage Equivalence of Neutron and Proton Radiations in Triple-Junction GaInP/GaAs/Ge Solar Cells, IEEE Transactions on Nuclear Science, 2023, 第 4 作者
（6） Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs, IEEE Transactions on Nuclear Science, 2023, 
（7） Optoelectrical Characteristics and Defect Dynamics in ��-Ga2O3 Thin Films Induced by Swift Heavy Ion Irradiation, NSREC-2023, 2023, 
（8） Tailoring the Phonon Polaritons in ��-MoO3 via Proton Irradiation, ADVANCED OPTICAL MATERIALS, 2023, 第 7 作者
（9） White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 第 4 作者
（10） Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 
（11） Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device, IEEE Transactions on Nuclear Science, 2022, 
（12） A monolithically sculpted van der Waals nano-opto-electro-mechanical coupler, Light: Science & Applications, 2022, 第 10 作者
（13） Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN, ACS PHOTONICS, 2021, 
（14） Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN, ACS Photonics, 2021, 
（15） Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, IEEE Transactions on Nuclear Science, 2020, 第 1 作者
（16） Mechanism Analysis of Proton Irradiation-Induced Increase of 3-dB Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 
（17） Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 
（18） Radiation Effects on the Static and Dynamic Characteristics of 850 nm 10 GHz GaAs Based Vertical Cavity Surface Emitting Lasers, NSREC-2020, 2020, 
（19） Mechanism Analysis of Proton Irradiation-Induced Increase of 3-dB Bandwidth of GaN-Based Microlight-Emitting Diodes for Space Light Communication, IEEE Transactions on Nuclear Science, 2020, 第 1 作者
（20） Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells, Journal of Luminescence, 2019, 
（21） Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS-2019, 2019, 第 1 作者
（22） X射线和重离子辐射对GaN基发光二极管的影响, Influence of X-Ray and Heavy Ion Radiation on Properties of GaN-Based LEDs, 微处理机, 2019, 第 1 作者
（23） Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions, Journal of Applied Physics, 2019, 第 3 作者
（24） Proton Irradiation Effects on the Static and Dynamic Characteristics of GaN-based Blue Light Emitting Diodes for Space Light Communication, RADECS-2019, 2019, 第 1 作者
（25） Point Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD, Journal of Physical Chemistry: C, 2019, 
（26） Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light Emitting Diodes, RADECS-2018, 2018, 第 1 作者
（27） A new type of magnetism-controllable Mn-based single-molecule magnet, Journal of Magnetism and Magnetic Materials, 2018, 第 3 作者
（28） Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum wells light-emitting diodes under direct and pulse currents, Journal of Applied Physics, 2013, 第 2 作者
（29） Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-like Defects, Chinese Physics B, 2012, 第 3 作者
（30） Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels, Applied Physics Express, 2012, 第 5 作者
（31） The influence of AlN interlayers on the microstructural and electrical properties of p-type AlGaN/GaN superlattices grown on GaN/sapphire templates, Applied Physics A-Materials Science&Processing, 2012, 第 3 作者
（32） Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes, Applied Physics Letters, 2012, 第 5 作者
（33） Enhanced Hole Transport in Mg-Doped AlxGa1-xN/GaN Superlattices by Strain and Period Modulations, Japanese Journal of Applied Physics, 2012, 第 3 作者
（34） Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer, Applied Physics A-Materials Science&Processing, 2012, 第 2 作者
（35） Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes, Journal of Applied Physics, 2012, 第 2 作者
（36） Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures, Journal of Applied Physics, 2011, 第 2 作者

   

（ 1 ） 碳基硅增强晶圆材料的缺陷演化机制研究, 负责人, 国家任务, 2023-11--2027-11
（ 2 ） 基于PN结的NLED关键材料与器件研究, 负责人, 国家任务, 2023-11--2026-10
（ 3 ） 基于石墨烯微尖场发射纳米真空管的hBN单光子源, 负责人, 国家任务, 2023-01--2026-12
（ 4 ） 晶圆级单晶二维层状半导体材料制备及相关高性能异质结构器件集成, 负责人, 中国科学院计划, 2019-09--2024-08