基本信息
艾立鹍  男  硕导  中国科学院上海微系统与信息技术研究所
电子邮件: Likunai@mail.sim.ac.cn
通信地址: 上海长宁路865号8号楼213
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
毫米波太赫兹器件
微结构材料与器件

出版信息

   
发表论文
(1) Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 
(2) Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, CHINESE PHYSICS B, 2021, 第 2 作者
(3) InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy, MATERIALS RESEARCH EXPRESS, 2021, 第 11 作者
(4) Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001), COATINGS, 2019, 第 11 作者
(5) Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy, JOURNAL OF MATERIALS SCIENCE, 2018, 第 2 作者
(6) Effects of growth conditions on optical quality and surface morphology of InGaAsBi, Effects of growth conditions on optical quality and surface morphology of InGaAsBi, CHINESEPHYSICSB, 2018, 第 2 作者
(7) InGaAsBi materials grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2017, 第 11 作者
(8) Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
(9) Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures, CHINESE PHYSICS B, 2016, 第 3 作者
(10) Effects of Si delta-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures, CHINESE PHYSICS LETTERS, 2015, 第 3 作者
(11) Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 第 3 作者
(12) InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2013, 第 3 作者
(13) InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE, RARE METALS, 2006, 第 1 作者
(14) InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy, JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 第 2 作者

科研活动

   
科研项目
( 1 ) GaAs芯片研究, 负责人, 境内委托项目, 2022-08--2023-07
( 2 ) InP基太赫兹器件研究, 负责人, 国家任务, 2019-12--2024-12