基本信息
艾立鹍  男  硕导  中国科学院上海微系统与信息技术研究所
电子邮件: Likunai@mail.sim.ac.cn
通信地址: 上海长宁路865号8号楼213
邮政编码:

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
毫米波太赫兹器件
微结构材料与器件

出版信息

   
发表论文
(1) Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 
(2) Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, CHINESE PHYSICS B, 2021, 第 2 作者
(3) InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy, MATERIALS RESEARCH EXPRESS, 2021, 通讯作者
(4) Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001), COATINGS, 2019, 通讯作者
(5) Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy, JOURNAL OF MATERIALS SCIENCE, 2018, 第 2 作者
(6) Effects of growth conditions on optical quality and surface morphology of InGaAsBi, Effects of growth conditions on optical quality and surface morphology of InGaAsBi, CHINESEPHYSICSB, 2018, 第 2 作者
(7) InGaAsBi materials grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2017, 通讯作者
(8) Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
(9) Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures, CHINESE PHYSICS B, 2016, 第 3 作者
(10) Effects of Si delta-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures, CHINESE PHYSICS LETTERS, 2015, 第 3 作者
(11) Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 第 3 作者
(12) InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2013, 第 3 作者
(13) InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE, RARE METALS, 2006, 第 1 作者
(14) InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy, JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 第 2 作者

科研活动

   
科研项目
( 1 ) InP基太赫兹器件研究, 负责人, 国家任务, 2019-12--2024-12
( 2 ) GaAs芯片研究, 负责人, 境内委托项目, 2022-08--2023-07