080903-微电子学与固体电子学

毫米波太赫兹器件
微结构材料与器件

   

（1） Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 
（2） Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing, Chinese Physics B, 2021, 第 2 作者
（3） InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy, MATERIALS RESEARCH EXPRESS, 2021, 第 2 作者  通讯作者
（4） Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001), COATINGS, 2019, 第 3 作者  通讯作者
（5） Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy, JOURNAL OF MATERIALS SCIENCE, 2018, 第 2 作者
（6） Effects of growth conditions on optical quality and surface morphology of InGaAsBi, Effects of growth conditions on optical quality and surface morphology of InGaAsBi, Chinese Physics B, 2018, 第 2 作者
（7） InGaAsBi materials grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2017, 第 1 作者  通讯作者
（8） Growth and electrical properties of high-quality InGaAsBi thin films using gas source molecular beam epitaxy, JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 第 3 作者
（9） Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures, Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures, Chinese Physics B, 2016, 第 3 作者
（10） Effects of Si delta-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures, CHINESE PHYSICS LETTERS, 2015, 第 3 作者
（11） Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 第 3 作者
（12） InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2013, 第 3 作者
（13） InGaP/InGaAs/GaAs DHBT structural materials grown by GSMBE, RARE METALS, 2006, 第 1 作者
（14） InP/InGaAs/InP DHBT structures with N+ doped composite collectors grown by gas source molecular beam epitaxy, JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 第 2 作者

   

（ 1 ） GaAs芯片研究, 负责人, 境内委托项目, 2022-08--2023-07
（ 2 ） InP基太赫兹器件研究, 负责人, 国家任务, 2019-12--2024-12