张菁  女  博导  中国科学院半导体研究所
电子邮件: jzhang@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号
邮政编码:

研究领域

1. 低维材料(二维半导体、二维磁体等)及其异质结构的可控制备、光电特性调控。

2. 新型低维半导体材料中能谷与自旋态的量子调控及新原理信息器件,包括自旋电子器件、谷电子学器件和激子晶体管等。

3. 以低温电学输运及磁场光谱为手段,研究低维半导体异质结中相关多体电子态、超晶格激子效应等新奇物理现象。


招生信息

每年拟招收研究生1-2名,联合培养博士和硕士生若干,欢迎具有物理,化学,材料,微电子相关背景的学生联系报考。

招生专业
070205-凝聚态物理
招生方向
二维材料及其异质结构的可控生长、 人工构筑以及光电特性调控
低维材料自旋和能谷电子学器件

教育背景

2013-09--2016-01   中国科学院物理研究所   理学博士
2010-09--2013-06   南开大学   理学硕士
2006-09--2010-06   兰州大学   理学学士
学历

博士

学位
凝聚态物理

工作经历

   
工作简历
2018-08~2020-07,瑞士洛桑联邦理工学院, 博士后
2016-05~2018-05,新加坡南洋理工大学, 博士后

出版信息

   
发表论文
[1] Long, Haoran, Liu, Hao, Wang, Xiaoyu, Wang, Bowen, Bai, Ruixue, Yu, Yali, Xin, Kaiyao, Liu, Liyuan, Xu, Yingqiang, Zhang, Jing, Jiang, Fagang, Wang, Xinghua, Wei, Zhongming, Yang, Juehan. Machine Vision Based on an Ultra-Wide Bandgap 2D Semiconductor AsSbO3. ADVANCED FUNCTIONAL MATERIALS. 2023, 第 10 作者http://dx.doi.org/10.1002/adfm.202306241.
[2] Weihao Li, Zhu, Wenkai, Gaojie Zhang, Hao Wu, Shouguo Zhu, Runze Li, Enze Zhang, Xiaomin Zhang, Yongcheng Deng, Jing Zhang, Lixia Zhao, Haixin Chang, Kaiyou Wang. Room-Temperature van der Waals Ferromagnet Switching by Spin-Orbit Torques. Advanced Materials[J]. 2023, 第 10 作者2303688, https://doi.org/10.1002/adma.202303688.
[3] Macha, Michal, Ji, Hyun Goo, Tripathi, Mukesh, Zhao, Yanfei, Thakur, Mukeshchand, Zhang, Jing, Kis, Andras, Radenovic, Aleksandra. Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD. NANOSCALE ADVANCES[J]. 2022, 第 6 作者4(20): 4391-4401, http://dx.doi.org/10.1039/d2na00409g.
[4] Zhu, Wenkai, Xie, Shihong, Lin, Hailong, Zhang, Gaojie, Wu, Hao, Hu, Tiangui, Wang, Ziao, Zhang, Xiaomin, Xu, Jiahan, Wang, Yujing, Zheng, Yuanhui, Yan, Faguang, Zhang, Jing, Zhao, Lixia, Patane, Amalia, Zhang, Jia, Chang, Haixin, Wang, Kaiyou. Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions. CHINESE PHYSICS LETTERS[J]. 2022, 第 13 作者39(12): 99-103, 
[5] Feng, Shun, Zou, Chenji, Cong, Chunxiao, Shang, Jingzhi, Zhang, Jing, Chen, Yu, Wu, Lishu, Zhang, Hongbo, Huang, Zumeng, Gao, Weibo, Zhang, Baile, Huang, Wei, Yu, Ting. Deterministic and Scalable Generation of Exciton Emitters in 2D Semiconductor Nanodisks. ADVANCED OPTICAL MATERIALS[J]. 2022, 第 5 作者10(6): http://dx.doi.org/10.1002/adom.202102702.
[6] Zhang, Miao, Lihter, Martina, Chen, TzuHeng, Macha, Michal, Rayabharam, Archith, Banjac, Karla, Zhao, Yanfei, Wang, Zhenyu, Zhang, Jing, Comtet, Jean, Aluru, Narayana R, Lingenfelder, Magali, Kis, Andras, Radenovic, Aleksandra. Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides. ACS NANO[J]. 2021, 第 9 作者15(4): 7168-7178, http://dx.doi.org/10.1021/acsnano.1c00373.
[7] Zou, Chenji, Zhang, Hongbo, Chen, Yu, Feng, Shun, Wu, Lishu, Zhang, Jing, Yu, Ting, Shang, Jingzhi, Cong, Chunxiao. Spatial variations of valley splitting in monolayer transition metal dichalcogenide. INFOMAT[J]. 2020, 第 6 作者2(3): 585-592, http://lib.cqvip.com/Qikan/Article/Detail?id=7103919393.
[8] Feng, Shun, Cong, Chunxiao, Konabe, Satoru, Zhang, Ding, Shang, Jingzhi, Chen, Yu, Zou, Chenji, Cao, Bingchen, Wu, Lishu, Peimyoo, Namphung, Zhang, Baile, Yu, Ting. Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach. SMALL[J]. 2019, 15(12): http://dx.doi.org/10.1002/smll.201805503.
[9] Jing Zhang, Luojun Du, Shun Feng, RunWu Zhang, Bingchen Cao, Chenji Zou, Yu Chen, Mengzhou Liao, Baile Zhang, Shengyuan A Yang, Guangyu Zhang, Ting Yu. Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route. NATURE COMMUNICATIONS[J]. 2019, 第 1 作者10(1): https://doaj.org/article/18a902443334474f9cb9b8fe27094953.
[10] Chen, Yu, Peng, Bo, Cong, Chunxiao, Shang, Jingzhi, Wu, Lishu, Yang, Weihuang, Zhou, Jiadong, Yu, Peng, Zhang, Hongbo, Wang, Yanlong, Zou, Chenji, Zhang, Jing, Liu, Sheng, Xiong, Qihua, Shao, Hezhu, Liu, Zheng, Zhang, Hao, Huang, Wei, Yu, Ting. In-Plane Anisotropic Thermal Conductivity of Few-Layered Transition Metal Dichalcogenide Td-WTe2. ADVANCED MATERIALS[J]. 2019, 第 12 作者31(7): http://www.corc.org.cn/handle/1471x/2372771.
[11] Jianqi Zhu, ZhiChang Wang, Huijia Dai, Qinqin Wang, Rong Yang, Hua Yu, Mengzhou Liao, Jing Zhang, Wei Chen, Zheng Wei, Na Li, Luojun Du, Dongxia Shi, Wenlong Wang, Lixin Zhang, Ying Jiang, Guangyu Zhang. Boundary activated hydrogen evolution reaction on monolayer MoS2. NATURE COMMUNICATIONS[J]. 2019, 第 8 作者10(1): https://doaj.org/article/5d5ef3f662014c9492ad24ca8bcb8d9f.
[12] Chen, Peng, Cheng, Cai, Shen, Cheng, Zhang, Jing, Wu, Shuang, Lu, Xiaobo, Wang, Shuopei, Du, Luojun, Watanabe, Kenji, Taniguchi, Takashi, Sun, Jiatao, Yang, Rong, Shi, Dongxia, Liu, Kaihui, Meng, Sheng, Zhang, Guangyu. Band evolution of two-dimensional transition metal dichalcogenides under electric fields. APPLIED PHYSICS LETTERS[J]. 2019, 第 4 作者115(8): 
[13] Zou, Chenji, Cong, Chunxiao, Shang, Jingzhi, Zhao, Chuan, Eginligil, Mustafa, Wu, Lishu, Chen, Yu, Zhang, Hongbo, Feng, Shun, Zhang, Jing, Zeng, Hao, Huang, Wei, Yu, Ting. Probing magnetic-proximity-effect enlarged valley splitting in monolayer WSe2 by photoluminescence. NANO RESEARCH[J]. 2018, 第 10 作者11(12): 6252-6259, http://lib.cqvip.com/Qikan/Article/Detail?id=6100057014.
[14] Wu, Shuang, Liu, Bing, Shen, Cheng, Li, Si, Huang, Xiaochun, Lu, Xiaobo, Chen, Peng, Wang, Guole, Wang, Duoming, Liao, Mengzhou, Zhang, Jing, Zhang, Tingling, Wang, Shuopei, Yang, Wei, Yang, Rong, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Yao, Yugui, Wang, Weihua, Zhang, Guangyu. Magnetotransport Properties of Graphene Nanoribbons with Zigzag Edges. PHYSICAL REVIEW LETTERS[J]. 2018, 第 11 作者120(21): http://dx.doi.org/10.1103/PhysRevLett.120.216601.
[15] Feng, Shun, Cong, Chunxiao, Peimyoo, Namphung, Chen, Yu, Shang, Jingzhi, Zou, Chenji, Cao, Bingchen, Wu, Lishu, Zhang, Jing, Eginligil, Mustafa, Wang, Xingzhi, Xiong, Qihua, Ananthanarayanan, Arundithi, Chen, Peng, Zhang, Baile, Yu, Ting. Tunable excitonic emission of monolayer WS2 for the optical detection of DNA nucleobases. NANO RESEARCH[J]. 2018, 第 9 作者11(3): 1744-1754, https://www.webofscience.com/wos/woscc/full-record/WOS:000424049300050.
[16] Yu, Hua, Yang, Zhengzhong, Du, Luojun, Zhang, Jing, Shi, Jinan, Chen, Wei, Chen, Peng, Liao, Mengzhou, Zhao, Jing, Meng, Jianling, Wang, Guole, Zhu, Jianqi, Yang, Rong, Shi, Dongxia, Gu, Lin, Zhang, Guangyu. Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane. SMALL[J]. 2017, 第 4 作者13(7): http://dx.doi.org/10.1002/smll.201603005.
[17] Zhu, Jianqi, Wang, Zhichang, Yu, Hua, Li, Na, Zhang, Jing, Meng, JianLing, Liao, Mengzhou, Zhao, Jing, Lu, Xiaobo, Du, Luojun, Yang, Rong, Shi, Dong, Jiang, Ying, Zhang, Guanyu. Argon Plasma Induced Phase Transition in Monolayer MoS2. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2017, 第 5 作者139(30): 10216-10219, https://www.webofscience.com/wos/woscc/full-record/WOS:000407089500013.
[18] Xie, Li, Liao, Mengzhou, Wang, Shuopei, Yu, Hua, Du, Luojun, Tang, Jian, Zhao, Jing, Zhang, Jing, Chen, Peng, Lu, Xiaobo, Wang, Guole, Xie, Guibai, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors. ADVANCED MATERIALS[J]. 2017, 第 8 作者29(37): https://www.webofscience.com/wos/woscc/full-record/WOS:000412184100020.
[19] Shao, PengZhi, Zhao, HaiMing, Cao, HuiWen, Wang, XueFeng, Pang, Yu, Li, YuXing, Deng, NingQin, Zhang, Jing, Zhang, GuangYu, Yang, Yi, Zhang, Sheng, Ren, TianLing. Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer. APPLIED PHYSICS LETTERS[J]. 2016, 第 8 作者108(20): https://www.webofscience.com/wos/woscc/full-record/WOS:000377024000042.
[20] Du, Luojun, Yu, Hua, Xie, Li, Wu, Shuang, Wang, Shuopei, Lu, Xiaobo, Liao, Mengzhou, Meng, Jianling, Zhao, Jing, Zhang, Jing, Zhu, Jianqi, Chen, Peng, Wang, Guole, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2. CRYSTALS[J]. 2016, 第 10 作者6(9): https://doaj.org/article/c0e87dca2dc74fd48934d9db5e9af1a3.
[21] Zhang, Jing, Wang, Jinhuan, Chen, Peng, Sun, Yue, Wu, Shuang, Jia, Zhiyan, Lu, Xiaobo, Yu, Hua, Chen, Wei, Zhu, Jianqi, Xie, Guibai, Yang, Rong, Shi, Dongxia, Xu, Xiulai, Xiang, Jianyong, Liu, Kaihui, Zhang, Guangyu. Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures. ADVANCED MATERIALS[J]. 2016, 第 1 作者28(10): 1950-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000372308700005.
[22] Wang, Duoming, Chen, Guorui, Li, Chaokai, Cheng, Meng, Yang, Wei, Wu, Shuang, Xie, Guibai, Zhang, Jing, Zhao, Jing, Lu, Xiaobo, Chen, Peng, Wang, Guole, Meng, Jianling, Tang, Jian, Yang, Rong, He, Congli, Liu, Donghua, Shi, Dongxia, Watanabe, Kenji, Taniguchi, Takashi, Feng, Ji, Zhang, Yuanbo, Zhang, Guangyu. Thermally Induced Graphene Rotation on Hexagonal Boron Nitride. PHYSICAL REVIEW LETTERS[J]. 2016, 第 8 作者116(12): https://www.webofscience.com/wos/woscc/full-record/WOS:000372728300001.
[23] Meng, Jianling, Wang, Guole, Li, Xiaomin, Lu, Xiaobo, Zhang, Jing, Yu, Hua, Chen, Wei, Du, Luojun, Liao, Mengzhou, Zhao, Jing, Chen, Peng, Zhu, Jianqi, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. Rolling Up a Monolayer MoS2 Sheet. SMALL[J]. 2016, 第 5 作者12(28): 3770-3774, https://www.webofscience.com/wos/woscc/full-record/WOS:000383375100004.
[24] Chen, Peng, Zhang, Ting Ting, Zhang, Jing, Xiang, Jianyong, Yu, Hua, Wu, Shuang, Lu, Xiaobo, Wang, Guole, Wen, Fusheng, Liu, Zhongyuan, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Gate tunable WSe2-BP van der Waals heterojunction devices. NANOSCALE[J]. 2016, 第 3 作者8(6): 3254-3258, https://www.webofscience.com/wos/woscc/full-record/WOS:000369908900010.
[25] Hailong Chen, Xiewen Wen, Jing Zhang, Tianmin Wu, Yongji Gong, Xiang Zhang, Jiangtan Yuan, Chongyue Yi, Jun Lou, Pulickel M Ajayan, Wei Zhuang, Guangyu Zhang, Junrong Zheng. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. NATURE COMMUNICATIONS[J]. 2016, 第 3 作者7(1): http://ir.iccas.ac.cn/handle/121111/35343.
[26] Lu, Xiaobo, Yang, Wei, Wang, Shuopei, Wu, Shuang, Chen, Peng, Zhang, Jing, Zhao, Jing, Meng, Jianling, Xie, Guibai, Wang, Duoming, Wang, Guole, Zhang, Ting Ting, Watanabe, Kenji, Taniguchi, Takashi, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Graphene nanoribbons epitaxy on boron nitride. APPLIED PHYSICS LETTERS[J]. 2016, 第 6 作者108(11): https://www.webofscience.com/wos/woscc/full-record/WOS:000373058400037.
[27] Chen, Wei, Zhao, Jing, Zhang, Jing, Gu, Lin, Yang, Zhenzhong, Li, Xiaomin, Yu, Hua, Zhu, Xuetao, Yang, Rong, Shi, Dongxia, Lin, Xuechun, Guo, Jiandong, Bai, Xuedong, Zhang, Guangyu. Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY[J]. 2015, 第 3 作者137(50): 15632-15635, http://ir.iphy.ac.cn/handle/311004/61063.
[28] Chen, Peng, Xiang, Jianyong, Yu, Hua, Zhang, Jing, Xie, Guibai, Wu, Shuang, Lu, Xiaobo, Wang, Guole, Zhao, Jing, Wen, Fusheng, Liu, Zhongyuan, Yang, Rong, Shi, Dongxia, Zhang, Guangyu. Gate tunable MoS2-black phosphorus heterojunction devices. 2D MATERIALS[J]. 2015, 第 4 作者2(3): http://ir.iphy.ac.cn/handle/311004/60121.
[29] 张菁. 单层二硫化钼及其异质结的可控生长和物性研究. 2015, 第 1 作者
[30] Cheng, Meng, Wang, Duoming, Sun, Zhaoru, Zhao, Jing, Yang, Rong, Wang, Guole, Yang, Wei, Xie, Guibai, Zhang, Jing, Chen, Peng, He, Congli, Liu, Donghua, Xu, Limei, Shi, Dongxia, Wang, Enge, Zhang, Guangyu. A Route toward Digital Manipulation of Water Nanodroplets on Surfaces. ACS NANO[J]. 2014, 第 9 作者8(4): 3955-3960, http://ir.iphy.ac.cn/handle/311004/58794.
[31] Zhang, Jing, Yu, Hua, Chen, Wei, Tian, Xuezeng, Liu, Donghua, Cheng, Meng, Xie, Guibai, Yang, Wei, Yang, Rong, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes. ACSNANO[J]. 2014, 第 1 作者8(6): 6024-6030, http://ir.iphy.ac.cn/handle/311004/58793.
[32] Liu, Donghua, Yang, Wei, Zhang, Lianchang, Zhang, Jing, Meng, Jianling, Yang, Rong, Zhang, Guangyu, Shi, Dongxia. Two-step growth of graphene with separate controlling nucleation and edge growth directly on SiO2 substrates. CARBON[J]. 2014, 第 4 作者72: 387-392, http://dx.doi.org/10.1016/j.carbon.2014.02.030.
[33] Xie, Guibai, Yang, Rong, Chen, Peng, Zhang, Jing, Tian, Xuezeng, Wu, Shuang, Zhao, Jing, Cheng, Meng, Yang, Wei, Wang, Duoming, He, Congli, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. A General Route Towards Defect and Pore Engineering in Graphene. SMALL[J]. 2014, 第 4 作者10(11): 2280-2284, http://ir.iphy.ac.cn/handle/311004/59743.
[34] Liu, Donghua, Shi, Zhiwen, Zhang, Lianchang, He, Congli, Zhang, Jing, Cheng, Meng, Yang, Rong, Tian, Xuezeng, Bai, Xuedong, Shi, Dongxia, Zhang, Guangyu. Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer. NANOTECHNOLOGY[J]. 2012, 第 5 作者23(30): http://dx.doi.org/10.1088/0957-4484/23/30/305701.

科研活动

   
科研项目
( 1 ) 自旋物态调控及其原理器件, 参与, 国家任务, 2022-12--2027-12
( 2 ) 二维半导体与硅基CMOS异质集成的感算一体化超灵敏、宽光谱探测成像, 参与, 地方任务, 2022-10--2026-10
( 3 ) 低维铁磁半导体中自发能谷极化机理与新型量子器件的研究, 负责人, 国家任务, 2022-01--2025-12
( 4 ) 低维半导体材料与新原理信息器件, 负责人, 中国科学院计划, 2022-01--2024-12
( 5 ) 中科院半导体所青年科技人才推进计划, 负责人, 研究所自主部署, 2021-02--2024-02
( 6 ) 卓越青年学者启动经费, 负责人, 研究所自主部署, 2020-12--2023-12

指导学生

现指导学生

王悦  硕士研究生  070205-凝聚态物理