基本信息

魏星 男 博导 中国科学院上海微系统与信息技术研究所
电子邮件: xwei@mail.sim.ac.cn
通信地址: 上海市长宁区长宁路865号8号楼604房间
邮政编码: 200050
电子邮件: xwei@mail.sim.ac.cn
通信地址: 上海市长宁区长宁路865号8号楼604房间
邮政编码: 200050
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
300mm SOI材料及新型SOI器件300mm直拉硅单晶晶体生长/缺陷动力学/缺陷工程跨尺度/多场耦合下晶体生长过程的数值模拟
教育背景
2007-04--2010-03 中国科学院上海微系统与信息技术研究所 博士2004-09--2007-03 长春理工大学 硕士2000-09--2004-07 长春理工大学 学士
工作经历
工作简历
2019-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员2013-01~2018-12,中国科学院上海微系统与信息技术研究所, 副研究员2010-06~2012-12,中国科学院上海微系统与信息技术研究所, 助理研究员2007-04~2010-03,中国科学院上海微系统与信息技术研究所, 博士2004-09~2007-03,长春理工大学, 硕士2000-09~2004-07,长春理工大学, 学士
专利与奖励
奖励信息
(1) 上海市五一劳动奖章, 省级, 2019
专利成果
( 1 ) METHOD FOR CLEANING BONDING INTERFACE BEFORE BONDING, 2020, 第 1 作者, 专利号: US15/905, 339( 2 ) ANNEALING METHOD FOR IMPROVING BONDING STRENGTH, 2020, 第 1 作者, 专利号: US15/906, 074( 3 ) METHOD FOR PREPARING SUBSTRATE WITH INSULATED BURIED LAYER, 2019, 第 1 作者, 专利号: US15/905, 344( 4 ) METHOD FOR PREPARING SUBSTRATE WITH CARRIER TRAPPING CENTER, 2019, 第 1 作者, 专利号: US15/905, 492
出版信息
发表论文
(1) Demonstration of 300 mm RF-SOI wafers fabricated by layer transfer technology, Nanoscale, 2025, 第 7 作者 通讯作者(2) Deciphering the Complexity of Step Profiles on Vicinal Si(001) Surfaces Through Multiscale Simulations, Small, 2025, 第 6 作者 通讯作者(3) The dissolution behavior of crystal���originated particle in 300 mm Czochralski silicon under argon annealing, Journal of Materials Science, 2024, 第 4 作者 通讯作者(4) Structure and RF performance evolution of polycrystalline silicon charge capture layer for advanced RF-SOI in in-situ annealing process, Materials Science in Semiconductor Processing, 2024, 第 7 作者 通讯作者(5) Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in p-GAA-p MOSFET, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 第 10 作者(6) Effects of Induced Current in Crystals on the Melt Flow and the Melt-Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field, CRYSTAL GROWTH & DESIGN, 2023, 第 7 作者 通讯作者(7) Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 第 6 作者 通讯作者(8) Development of the conductivity type inversion caused by thermal double donors' formation in p-type high-resistivity silicon, APPLIED PHYSICS EXPRESS, 2023, 第 7 作者 通讯作者(9) Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 第 8 作者 通讯作者(10) Determination of conduction type in high-resistivity silicon by combining spreading resistance profiling (SRP) with hydrofluoric acid treatment, APPLIED PHYSICS LETTERS, 2023, 第 6 作者 通讯作者(11) Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 第 7 作者 通讯作者(12) Fabrication of uniaxially/biaxially tensile-strained Ge by strain redistribution method, AIP ADVANCES, 2023, 第 5 作者(13) Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field, CRYSTENGCOMM, 2023, 第 7 作者 通讯作者(14) 叠层SOI MOSFET不同背栅偏压下的热载流子效应, Hot Carrier Effect of Double SOI MOSFET Under Different Back-Gate Bias Voltages, 半导体技术, 2023, 第 5 作者(15) Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate, ELECTRONICS LETTERS, 2023, 第 5 作者(16) Effects of Induced Current in Crystals on the Melt Flow and the Melt-Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field, CRYSTAL GROWTH & DESIGN, 2023, (17) Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field, CRYSTENGCOMM, 2023, (18) Investigation of Negative Bias Effect on Radiation Hardening for Double SOI Technology, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 第 5 作者 通讯作者(19) Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 第 10 作者 通讯作者(20) Investigation of microscale and nanoscale twin lamellae in monocrystalline silicon grown by Czochralski method, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 第 8 作者 通讯作者(21) Investigation on time-dependent behavior of resistivity in high-resistivity silicon wafers, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 第 9 作者 通讯作者(22) Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on Insulator MOSFET, IEEE ELECTRON DEVICE LETTERS, 2022, 第 6 作者 通讯作者(23) Melt convection and temperature distribution in 300mm Czochralski crystal growth with transverse magnetic field, JOURNAL OF CRYSTAL GROWTH, 2022, 第 7 作者 通讯作者(24) Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 第 7 作者 通讯作者(25) Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE ELECTRON DEVICE LETTERS, 2021, 第 7 作者 通讯作者(26) Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者 通讯作者(27) Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者 通讯作者(28) Characterization of grown-in defects in Si wafers by gas decoration, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者 通讯作者(29) Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing, ACTA PHYSICA SINICA, 2021, 第 5 作者(30) Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate, IEEE ELECTRON DEVICE LETTERS, 2021, 第 6 作者(31) Characterization of grown-in defects in Si wafers by gas decoration, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者 通讯作者(32) Fabrication of silicon-on-insulator with high uniform top Si for silicon photonics applications, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 第 7 作者 通讯作者(33) Formation of uniform and homogeneous ternary NiSi2-xAlx on Si(001) by an Al interlayer mediation, APPLIED PHYSICS EXPRESS, 2020, 第 7 作者(34) Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications, SOLID-STATE ELECTRONICS, 2020, 第 1 作者 通讯作者(35) Comparative Investigation on Bias Dependent RF Performance of SOI Substrates, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 第 6 作者 通讯作者(36) Investigation on Evolution of Oxygen Precipitates in Bonded SOI Substrate, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 第 5 作者 通讯作者(37) Silicon on Insulator with Highly Uniform Top Si Fabricated by H/He Coimplantation, CHINESE PHYSICS LETTERS, 2019, 第 5 作者 通讯作者(38) Effects of Low Boron Concentration on Electrical Properties of Commercial Trap-Rich High Resistivity SOI Substrate, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 第 7 作者 通讯作者(39) Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer, Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer, 中国物理快报:英文版, 2018, 第 5 作者(40) Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 第 3 作者 通讯作者(41) Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates, Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates, 中国物理快报英文版, 2018, 第 7 作者 通讯作者(42) Investigation of radiation hardened SOI wafer fabricated by ion-cut technique, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 第 2 作者 通讯作者(43) Enhanced cracking in Si/B-doped Si0.70Ge0.30/Si heterostructures via hydrogen trapping effect, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 第 1 作者 通讯作者(44) Investigation of radiation hardened SOI wafer fabricated by ion-cut technique, NUCLEAR INST. AND METHODS IN PHYSICS RESEARCH, B, 2018, 第 2 作者 通讯作者(45) Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates, Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates, 中国物理快报:英文版, 2017, 第 6 作者(46) 改性离子注入高阻SOI衬底的共面波导特性研究, Investigation on RF loss characteristics of Si implantation modified HR-SOI, 电子元件与材料, 2017, 第 3 作者(47) 700℃退火下铝调制镍硅锗薄膜的外延生长机理, Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ���, 物理学报, 2016, 第 7 作者(48) 微纳结构的载能离子制备、调控及其机理研究年度报告, Control and Mechanism of Synthesizing Micro-nano Structures by Ion Beam������Annual Report, 科技创新导报, 2016, 第 3 作者(49) 高锡含量锗锡合金和镍反应的形貌研究, Morphology research of high Sn concentration GeSn alloy reacted with Nickel, 功能材料与器件学报, 2015, 第 4 作者(50) Growth of homogeneous single-layer graphene on Ni-Ge binary substrate, APPLIED PHYSICS LETTERS, 2014, 第 6 作者(51) Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer, APPLIED PHYSICS EXPRESS, 2014, 第 8 作者 通讯作者(52) Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 2 作者(53) Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step Si+ Implantation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 第 5 作者(54) C~+离子注入SiGe衬底提高NiSiGe表面和界面特性研究, Improved NiSiGe Surface and Interface Morphologies on C Pre - implanted SiGe, 功能材料与器件学报, 2013, 第 4 作者(55) Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing, APPLIED PHYSICS EXPRESS, 2011, 第 1 作者 通讯作者(56) Silicon-on-Insulator-on-Cavity-Structured Micropressure Sensor, SENSORS AND MATERIALS, 2011, 第 2 作者(57) Epitaxial growth of fully relaxed Si 0.75Ge 0.25 on SOI substrate, APPLIED SURFACE SCIENCE, 2011, 第 2 作者(58) Etch characteristics of Si1-xGex films in HNO3:H2O:HF, SCIENCE CHINA Technological Sciences, 2011, 第 2 作者(59) 体硅上外延超薄Si1-xGex用于制备SGOI材料, Growth of ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI, 功能材料与器件学报, 2011, 第 3 作者(60) 两步氧离子注入工艺制备SOI材料研究, 科学通报, 2010, 第 1 作者(61) 图形化SOI衬底上侧向外延生长GaN研究, Fabrication of GaN on patterned silicon-on-insulator by epitaxial lateral overgrowth, 功能材料, 2010, 第 3 作者(62) Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 第 1 作者(63) Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 第 3 作者(64) 薄膜厚埋层SOI材料的新制备技术, New Technology for Fabricating a Thin Film/Thick BOX Silicon-on-Insulator, 半导体学报, 2008, 第 1 作者(65) New technology for fabricating a thin film/thick BOX silicon-on-insulator, SOURCE:PAN TAO TI HSUEH PAO/CHINESE JOURNAL OF SEMICONDUCTORS, V 29, N 7, JULY, 2008, P 1350-1353, 2008, 第 1 作者(66) 脉冲阳极氧化工艺制作GaAs/AlGaAs宽条形半导体激光器, GaAs/AIGaAs BA semiconductor lasers fabricated with pulsed anodic oxidation process, 功能材料与器件学报, 2008, 第 1 作者
科研活动
科研项目
( 1 ) SOI功能衬底研发, 负责人, 中国科学院计划, 2023-12--2028-11( 2 ) 特种SOI晶圆及新型器件研究, 负责人, 国家任务, 2022-11--2026-10( 3 ) 国家高层次人才特殊支持计划, 负责人, 国家任务, 2022-01--2024-12