080903-微电子学与固体电子学

300mm SOI材料及新型SOI器件
300mm直拉硅单晶晶体生长/缺陷动力学/缺陷工程
跨尺度/多场耦合下晶体生长过程的数值模拟

2007-04--2010-03   中国科学院上海微系统与信息技术研究所   博士
2004-09--2007-03   长春理工大学   硕士
2000-09--2004-07   长春理工大学   学士

   

2019-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2013-01~2018-12,中国科学院上海微系统与信息技术研究所, 副研究员
2010-06~2012-12,中国科学院上海微系统与信息技术研究所, 助理研究员
2007-04~2010-03,中国科学院上海微系统与信息技术研究所, 博士
2004-09~2007-03,长春理工大学, 硕士
2000-09~2004-07,长春理工大学, 学士

   

（1） 上海市五一劳动奖章, 省级, 2019

（ 1 ） METHOD FOR CLEANING BONDING INTERFACE BEFORE BONDING, 2020, 第 1 作者, 专利号: US15/905, 339

（ 2 ） ANNEALING METHOD FOR IMPROVING BONDING STRENGTH, 2020, 第 1 作者, 专利号: US15/906, 074

（ 3 ） METHOD FOR PREPARING SUBSTRATE WITH INSULATED BURIED LAYER, 2019, 第 1 作者, 专利号: US15/905, 344

（ 4 ） METHOD FOR PREPARING SUBSTRATE WITH CARRIER TRAPPING CENTER, 2019, 第 1 作者, 专利号: US15/905, 492

   

（1） Demonstration of 300 mm RF-SOI wafers fabricated by layer transfer technology, Nanoscale, 2025, 第 7 作者  通讯作者
（2） Deciphering the Complexity of Step Profiles on Vicinal Si(001) Surfaces Through Multiscale Simulations, Small, 2025, 第 6 作者  通讯作者
（3） The dissolution behavior of crystal���originated particle in 300 mm Czochralski silicon under argon annealing, Journal of Materials Science, 2024, 第 4 作者  通讯作者
（4） Structure and RF performance evolution of polycrystalline silicon charge capture layer for advanced RF-SOI in in-situ annealing process, Materials Science in Semiconductor Processing, 2024, 第 7 作者  通讯作者
（5） Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in p-GAA-p MOSFET, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 第 10 作者
（6） Effects of Induced Current in Crystals on the Melt Flow and the Melt-Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field, CRYSTAL GROWTH & DESIGN, 2023, 第 7 作者  通讯作者
（7） Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 第 6 作者  通讯作者
（8） Development of the conductivity type inversion caused by thermal double donors' formation in p-type high-resistivity silicon, APPLIED PHYSICS EXPRESS, 2023, 第 7 作者  通讯作者
（9） Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 第 8 作者  通讯作者
（10） Determination of conduction type in high-resistivity silicon by combining spreading resistance profiling (SRP) with hydrofluoric acid treatment, APPLIED PHYSICS LETTERS, 2023, 第 6 作者  通讯作者
（11） Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 第 7 作者  通讯作者
（12） Fabrication of uniaxially/biaxially tensile-strained Ge by strain redistribution method, AIP ADVANCES, 2023, 第 5 作者
（13） Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field, CRYSTENGCOMM, 2023, 第 7 作者  通讯作者
（14） 叠层SOI MOSFET不同背栅偏压下的热载流子效应, Hot Carrier Effect of Double SOI MOSFET Under Different Back-Gate Bias Voltages, 半导体技术, 2023, 第 5 作者
（15） Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate, ELECTRONICS LETTERS, 2023, 第 5 作者
（16） Effects of Induced Current in Crystals on the Melt Flow and the Melt-Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field, CRYSTAL GROWTH & DESIGN, 2023, 
（17） Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field, CRYSTENGCOMM, 2023, 
（18） Investigation of Negative Bias Effect on Radiation Hardening for Double SOI Technology, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 第 5 作者  通讯作者
（19） Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 第 10 作者  通讯作者
（20） Investigation of microscale and nanoscale twin lamellae in monocrystalline silicon grown by Czochralski method, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 第 8 作者  通讯作者
（21） Investigation on time-dependent behavior of resistivity in high-resistivity silicon wafers, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 第 9 作者  通讯作者
（22） Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on Insulator MOSFET, IEEE ELECTRON DEVICE LETTERS, 2022, 第 6 作者  通讯作者
（23） Melt convection and temperature distribution in 300mm Czochralski crystal growth with transverse magnetic field, JOURNAL OF CRYSTAL GROWTH, 2022, 第 7 作者  通讯作者
（24） Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 第 7 作者  通讯作者
（25） Gate-All-Around MOSFET Built on Void Embedded Silicon on Insulator Substrate, IEEE ELECTRON DEVICE LETTERS, 2021, 第 7 作者  通讯作者
（26） Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者  通讯作者
（27） Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者  通讯作者
（28） Characterization of grown-in defects in Si wafers by gas decoration, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者  通讯作者
（29） Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing, ACTA PHYSICA SINICA, 2021, 第 5 作者
（30） Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate, IEEE ELECTRON DEVICE LETTERS, 2021, 第 6 作者
（31） Characterization of grown-in defects in Si wafers by gas decoration, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 6 作者  通讯作者
（32） Fabrication of silicon-on-insulator with high uniform top Si for silicon photonics applications, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 第 7 作者  通讯作者
（33） Formation of uniform and homogeneous ternary NiSi2-xAlx on Si(001) by an Al interlayer mediation, APPLIED PHYSICS EXPRESS, 2020, 第 7 作者
（34） Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications, SOLID-STATE ELECTRONICS, 2020, 第 1 作者  通讯作者
（35） Comparative Investigation on Bias Dependent RF Performance of SOI Substrates, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 第 6 作者  通讯作者
（36） Investigation on Evolution of Oxygen Precipitates in Bonded SOI Substrate, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 第 5 作者  通讯作者
（37） Silicon on Insulator with Highly Uniform Top Si Fabricated by H/He Coimplantation, CHINESE PHYSICS LETTERS, 2019, 第 5 作者  通讯作者
（38） Effects of Low Boron Concentration on Electrical Properties of Commercial Trap-Rich High Resistivity SOI Substrate, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 第 7 作者  通讯作者
（39） Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer, Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer, 中国物理快报：英文版, 2018, 第 5 作者
（40） Fabrication and Characterization of Radiation Hardened SOI Wafers via Ion-Cut Technique, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 第 3 作者  通讯作者
（41） Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates, Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates, 中国物理快报英文版, 2018, 第 7 作者  通讯作者
（42） Investigation of radiation hardened SOI wafer fabricated by ion-cut technique, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 第 2 作者  通讯作者
（43） Enhanced cracking in Si/B-doped Si0.70Ge0.30/Si heterostructures via hydrogen trapping effect, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 第 1 作者  通讯作者
（44） Investigation of radiation hardened SOI wafer fabricated by ion-cut technique, NUCLEAR INST. AND METHODS IN PHYSICS RESEARCH, B, 2018, 第 2 作者  通讯作者
（45） Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates, Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates, 中国物理快报：英文版, 2017, 第 6 作者
（46） 改性离子注入高阻SOI衬底的共面波导特性研究, Investigation on RF loss characteristics of Si implantation modified HR-SOI, 电子元件与材料, 2017, 第 3 作者
（47） 700℃退火下铝调制镍硅锗薄膜的外延生长机理, Mechanism of NiSi0.7Ge0.3 epitaxial growth by Al interlayer mediation at 700 ���, 物理学报, 2016, 第 7 作者
（48） 微纳结构的载能离子制备、调控及其机理研究年度报告, Control and Mechanism of Synthesizing Micro-nano Structures by Ion Beam������Annual Report, 科技创新导报, 2016, 第 3 作者
（49） 高锡含量锗锡合金和镍反应的形貌研究, Morphology research of high Sn concentration GeSn alloy reacted with Nickel, 功能材料与器件学报, 2015, 第 4 作者
（50） Growth of homogeneous single-layer graphene on Ni-Ge binary substrate, APPLIED PHYSICS LETTERS, 2014, 第 6 作者
（51） Ultrasmooth epitaxial Ge grown on (001) Si utilizing a thin B-doped SiGe buffer layer, APPLIED PHYSICS EXPRESS, 2014, 第 8 作者  通讯作者
（52） Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 2 作者
（53） Improving Total Dose Tolerance of Buried Oxides in SOI Wafers by Multiple-Step Si+ Implantation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 第 5 作者
（54） C~+离子注入SiGe衬底提高NiSiGe表面和界面特性研究, Improved NiSiGe Surface and Interface Morphologies on C Pre - implanted SiGe, 功能材料与器件学报, 2013, 第 4 作者
（55） Fabrication of Direct Silicon Bonded Hybrid Orientation Substrate by Separation by Implanted Oxygen Layer Transfer and Oxide Dissolution Annealing, APPLIED PHYSICS EXPRESS, 2011, 第 1 作者  通讯作者
（56） Silicon-on-Insulator-on-Cavity-Structured Micropressure Sensor, SENSORS AND MATERIALS, 2011, 第 2 作者
（57） Epitaxial growth of fully relaxed Si 0.75Ge 0.25 on SOI substrate, APPLIED SURFACE SCIENCE, 2011, 第 2 作者
（58） Etch characteristics of Si1-xGex films in HNO3:H2O:HF, SCIENCE CHINA Technological Sciences, 2011, 第 2 作者
（59） 体硅上外延超薄Si1-xGex用于制备SGOI材料, Growth of ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI, 功能材料与器件学报, 2011, 第 3 作者
（60） 两步氧离子注入工艺制备SOI材料研究, 科学通报, 2010, 第 1 作者
（61） 图形化SOI衬底上侧向外延生长GaN研究, Fabrication of GaN on patterned silicon-on-insulator by epitaxial lateral overgrowth, 功能材料, 2010, 第 3 作者
（62） Characterization and analysis of silicon on insulator fabricated by separation by implanted oxygen layer transfer, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 第 1 作者
（63） Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 第 3 作者
（64） 薄膜厚埋层SOI材料的新制备技术, New Technology for Fabricating a Thin Film/Thick BOX Silicon-on-Insulator, 半导体学报, 2008, 第 1 作者
（65） New technology for fabricating a thin film/thick BOX silicon-on-insulator, SOURCE:PAN TAO TI HSUEH PAO/CHINESE JOURNAL OF SEMICONDUCTORS, V 29, N 7, JULY, 2008, P 1350-1353, 2008, 第 1 作者
（66） 脉冲阳极氧化工艺制作GaAs／AlGaAs宽条形半导体激光器, GaAs/AIGaAs BA semiconductor lasers fabricated with pulsed anodic oxidation process, 功能材料与器件学报, 2008, 第 1 作者

   

（ 1 ） SOI功能衬底研发, 负责人, 中国科学院计划, 2023-12--2028-11
（ 2 ） 特种SOI晶圆及新型器件研究, 负责人, 国家任务, 2022-11--2026-10
（ 3 ） 国家高层次人才特殊支持计划, 负责人, 国家任务, 2022-01--2024-12