基本信息
朱小健 男 博导 中国科学院宁波材料技术与工程研究所
email: zhuxj@nimte.ac.cn
address: 浙江省宁波市镇海区中官西路1219号
postalCode:
email: zhuxj@nimte.ac.cn
address: 浙江省宁波市镇海区中官西路1219号
postalCode:
招生信息
招生专业
080501-材料物理与化学
招生方向
新型信息存储材料与器件柔性智能传感器
教育背景
2009-09--2020-06 中国科学院宁波材料技术与工程研究所 博士2005-09--2009-07 苏州大学 学士
工作经历
工作简历
2020-05~现在, 中国科学院宁波材料技术与工程研究所, 研究员2015-05~2020-04,美国密歇根大学安娜堡分校, 博士后2014-07~2015-03,中国科学院宁波材料技术与工程研究所, 助理研究员2009-09~2020-06,中国科学院宁波材料技术与工程研究所, 博士2005-09~2009-07,苏州大学, 学士
专利与奖励
奖励信息
(1) 阻变存储器的电阻态精准调控及功能集成, 一等奖, 省级, 2021
专利成果
( 1 ) 一种磁性隧道结的制备方法, 2018, 第 4 作者, 专利号: CN107785485A( 2 ) 基于扫描探针显微镜的微/纳米热电原位探测装置及探测方法, 2016, 第 2 作者, 专利号: CN105510637A( 3 ) 一种光电多功能结构单元、其制备方法与应用, 2014, 第 4 作者, 专利号: CN103730573A( 4 ) 一种高稳定性的电阻式随机存储器及其制备方法, 2012, 第 2 作者, 专利号: CN102810634A( 5 ) 一种量子点接触的制备方法, 2012, 第 2 作者, 专利号: CN102543731A( 6 ) 一种电流振荡器及其制备方法, 2012, 第 4 作者, 专利号: CN102315834A( 7 ) 一种自支撑多铁性复合薄膜的制备方法, 2011, 第 5 作者, 专利号: CN102227013A
出版信息
发表论文
(1) Selective Dual-Ion Modulation in Solid-State Magnetoelectric Heterojunctions for In-Memory Encryption, SMALL, 2023, 第 2 作者 通讯作者(2) 本征可拉伸阈值型忆阻器及其神经元仿生特性, Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations, JOURNAL OF INORGANIC MATERIALS, 2023, 第 2 作者 通讯作者(3) 本征可拉伸阈值型忆阻器及其神经元仿生特性, Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations, 无机材料学报, 2023, 第 2 作者(4) 氯仿改性聚(3-己基噻吩)有机电化学晶体管及其神经突触功能模仿, Poly(3-hexylthiophene)Based Organic Electrochemical Transistor Optimized with Chloroform and Its Synaptic Function Emulation, 功能高分子学报, 2023, 第 7 作者(5) Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities, ADVANCED MATERIALS TECHNOLOGIES, 2021, 第 9 作者(6) A visible light-triggered artificial photonic nociceptor with adaptive tunability of threshold, NANOSCALE, 2021, 第 7 作者(7) Memristor networks for real-time neural activity analysis, NATURE COMMUNICATIONS, 2020, 第 1 作者(8) Ionic modulation and ionic coupling effects in MoS2 devices for neuromorphic computing, NATURE MATERIALS, 2019, 第 1 作者(9) Optogenetics-Inspired Tunable Synaptic Functions in Memristors, ACS NANO, 2018, 第 1 作者(10) Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects, ADVANCED MATERIALS, 2017, 第 1 作者(11) In Situ Nanoscale Electric Field Control of Magnetism by Nanoionics, ADVANCED MATERIALS, 2016, 第 1 作者(12) Modulation of physical properties of oxide thin films by multiple fields, Modulation of physical properties of oxide thin films by multiple fields, Chinese Physics B, 2016, 第 3 作者(13) Switching memory: an optoelectronic resistive switching memory with integrated demodulating and arithmetic functions (adv. Mater. 17/2015)., ADVANCED MATERIALS (DEERFIELD BEACH, FLA.), 2015, 第 3 作者(14) Metal-Organic Framework Nanofilm for Mechanically Flexible Information Storage Applications, ADVANCED FUNCTIONAL MATERIALS, 2015, 第 4 作者(15) Push-Pull Type Oligo(N-annulated perylene)quinodimethanes: Chain Length and Solvent-Dependent Ground States and Physical Properties, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 第 6 作者(16) Achieving a high magnetization in sub-nanostructured magnetite films by spin-flipping of tetrahedral Fe3+ cations, NANO RESEARCH, 2015, 第 6 作者(17) An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions, ADVANCED MATERIALS, 2015, 第 3 作者(18) Nanoscale Magnetization Reversal Caused by Electric Field-Induced Ion Migration and Redistribution in Cobalt Ferrite Thin Films, ACS NANO, 2015, 第 2 作者(19) Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures, ADVANCED FUNCTIONAL MATERIALS, 2014, 第 4 作者(20) Ion transport-related resistive switching in film sandwich structures, CHINESE SCIENCE BULLETIN, 2014, 第 1 作者(21) Thermally-stable resistive switching with a large ON/OFF ratio achieved in poly(triphenylamine), CHEMICAL COMMUNICATIONS, 2014, 第 4 作者(22) para-Quinodimethane- Bridged Perylene Dimers and Pericondensed Quaterrylenes: The Effect of the Fusion Mode on the Ground States and Physical Properties, CHEMISTRY-A EUROPEAN JOURNAL, 2014, 第 4 作者(23) Unusual anisotropic magnetoresistance in charge-orbital ordered Nd0.5Sr0.5MnO3 polycrystals, JOURNAL OF APPLIED PHYSICS, 2014, 第 5 作者(24) Improvement of Resistive Switching Performances in ZnLaO Film by Embedding a Thin ZnO Buffer Layer, ECS SOLID STATE LETTERS, 2013, 第 11 作者(25) Role of oxadiazole moiety in different D-A polyazothines and related resistive switching properties, JOURNAL OF MATERIALS CHEMISTRY C, 2013, 第 3 作者(26) Tetracyanoquaterrylene and Tetracyanohexarylenequinodimethanes with Tunable Ground States and Strong Near-Infrared Absorption, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2013, 第 5 作者(27) Dibenzoheptazethrene Isomers with Different Biradical Characters: An Exercise of Clar's Aromatic Sextet Rule in Singlet Biradicaloids, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 第 4 作者(28) Pushing Extended p-Quinodimethanes to the Limit: Stable Tetracyano-oligo(N-annulated perylene)quinodimethanes with Tunable Ground States, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 第 4 作者(29) Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory, ADVANCED MATERIALS, 2012, 第 1 作者(30) Nonvolatile bistable resistive switching in a new polyimide bearing 9-phenyl-9H-carbazole pendant?, JOURNAL OF MATERIALS CHEMISTRY, 2012, 第 3 作者(31) A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 第 2 作者(32) Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine, JOURNAL OF MATERIALS CHEMISTRY, 2012, 第 5 作者(33) Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments, NANOTECHNOLOGY, 2011, 第 4 作者(34) Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin films, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 1 作者 通讯作者(35) Local leakage current behaviours of BiFeO3 films, Local leakage current behaviours of BiFeO_3 films, Chinese Physics B, 2011, 第 3 作者(36) Local leakage current behaviours of BiFeO3 films, Local leakage current behaviours of BiFeO3 films, 中国物理:英文版, 2011, 第 3 作者
科研活动
科研项目
( 1 ) 忆阻型人工神经树突器件及其时空信号处理功能研究, 负责人, 国家任务, 2022-01--2025-12( 2 ) 铪基铁电材料与三维存储器件研究, 参与, 国家任务, 2021-12--2026-12( 3 ) 混合离子半导体忆阻器的设计及其突触仿生功能的研究, 负责人, 国家任务, 2021-01--2023-12( 4 ) 忆阻型神经网络仿生计算功能的设计与应用研究, 负责人, 研究所自主部署, 2020-05--2024-09