080903-微电子学与固体电子学
0805Z2-半导体材料与器件
070207-光学

II类超晶格红外探测器的研究
红外探测材料的分子束外延生长研究
红外探测材料与器件关系研究

2008-03--2011-06   同济大学   博士学位
2004-09--2007-07   河南大学   硕士学位
2000-09--2004-07   河南大学   学士学位

   

2017-09~现在, 中国科学院上海技术物理研究所, 副研究员
2011-06~2017-09,中国科学院上海技术物理研究所, 助理研究员
2008-03~2011-06,同济大学, 博士学位
2004-09~2007-07,河南大学, 硕士学位
2000-09~2004-07,河南大学, 学士学位

   

（1） 基于InAs衬底的16微米甚长波超晶格红外探测器暗电流机理及其抑制研究, 二等奖, 研究所（学校）, 2018
（2） 新型InAs基甚长波InAs/GaSb II类超晶格生长探索, 三等奖, 研究所（学校）, 2016

（ 1 ） 一种集成有源布拉格反射器的单模太赫兹量子级联激光器, 2020, 第 9 作者, 专利号: CN110707528A

（ 2 ） 一种含有天线耦合器的圆偏振单模太赫兹量子级联激光器, 2020, 第 9 作者, 专利号: CN110707527A

（ 3 ） 一种含有高效率衍射光栅的单模太赫兹量子级联激光器, 2020, 第 9 作者, 专利号: CN110690647A

（ 4 ） 用于测量太赫兹量子级联激光器增益的器件及测量方法, 2019, 第 8 作者, 专利号: CN109244822A

（ 5 ） 一种砷化铟基II类超晶格结构及制备方法, 2017, 第 1 作者, 专利号: CN106409937A

（ 6 ） 无铝型II类超晶格长波双势垒红外探测器, 2016, 第 3 作者, 专利号: CN205810841U

（ 7 ） 一种基于砷化铟衬底的II类超晶格结构, 2016, 第 1 作者, 专利号: CN205542814U

（ 8 ） 一种无铝型II类超晶格长波双势垒红外探测器, 2016, 第 3 作者, 专利号: CN105789364A

（ 9 ） 一种砷化铟基II类超晶格结构及制备方法, 2016, 第 1 作者, 专利号: CN105789355A

（ 10 ） 一种基于砷化铟衬底的II类超晶格结构及制备方法, 2016, 第 1 作者, 专利号: CN105514189A

（ 11 ） 基于砷阀开关的II类超晶格结构及制备方法, 2014, 第 2 作者, 专利号: CN103500765A

   

（1） 面向高工作温度应用的带间级联红外光电器件, Interband cascaded infrared optoelectronic devices for high operating temperature applications, 红外与毫米波学报, 2022, 第 3 作者
（2） Fabrication of a 1024×1024 format long wavelength infrared focal plane array based on type-II superlattice and barrier enhanced structure, Infrared Physics and Technology, 2021, 通讯作者
（3） InAs/GaAsSb Type-II Superlattice LWIR Focal Plane Arrays Detectors Grown on InAs Substrates, IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 第 6 作者
（4） Terahertz master-oscillator power-amplifier quantum Cascade laser with controllable polarization, APPLIED PHYSICS LETTERS, 2020, 第 6 作者
（5） Fabrication and Characterization of InAs/GaSb type-II Superlattice Long-Wavelength Infrared Detectors Aiming High Temperature Sensitivity, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 第 5 作者
（6） Modeling and improving the output power of terahertz master-oscillator power-amplifier quantum cascade lasers, OPTICS EXPRESS, 2020, 第 5 作者
（7） InAs/GaSbⅡ类超晶格台面的ICP刻蚀研究, Study on ICP dry etching of typeⅡInAs/GaSb superlattices infrared focal plane arrays, 红外与毫米波学报, 2019, 第 5 作者
（8） Size confinement and origins of two-photon absorption and refraction in CdSe quantum dots, OPTICS EXPRESS, 2019, 第 2 作者
（9） InAs/GaSb II类超晶格台面的ICP刻蚀研究, Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 5 作者
（10） 高灵敏度II类超晶格长波红外探测系统研究, Research on high sensitivity type-II superlattice long wavelength infrared detection system, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 6 作者
（11） Independent Control of Mode Selection and Power Extraction in Terahertz Quantum Cascade Lasers, 2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2019, 第 5 作者
（12） InAs/GaSb II类超晶格台面的ICP刻蚀研究, Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 5 作者
（13） Gain measurement of terahertz quantum cascade laser via a master-oscillator power-amplifier configuration, JOURNAL OF CRYSTAL GROWTH, 2019, 第 3 作者
（14） Terahertz master-oscillator power-amplifier quantum cascade laser with a grating coupler of extremely low reflectivity, OPTICS EXPRESS, 2018, 第 3 作者
（15） Surface oxygen-containing defects of graphene nanosheets with tunable nonlinear optical absorption and refraction, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 第 2 作者
（16） ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 4 作者
（17） Highly efficient power extraction in terahertz quantum cascade laser via a grating coupler, APPLIED PHYSICS LETTERS, 2018, 第 3 作者
（18） Oxygen-containing-defect-induced synergistic nonlinear optical enhancement of graphene/CdS nanohybrids under single pulse laser irradiation, Oxygen-containing-defect-induced synergistic nonlinear optical enhancement of graphene/CdS nanohybrids under single pulse laser irradiation, PHOTONICS RESEARCH, 2018, 第 2 作者
（19） High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 第 3 作者
（20） InAs /GaSb II类超晶格长波红外探测器的实时γ 辐照效应, Real-time γ irradiation effects on long-wavelength InAs /GaSb Type II superlattice infrared detector, 红外与毫米波学报, 2017, 第 7 作者
（21） Terahertz first-order distributed feedback quantum cascade laser with light extraction via a diffraction grating, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 2 作者
（22） Surface-tuned three-photon absorption of CdSe nanocrystals in near-infrared, APPLIED PHYSICS B-LASERS AND OPTICS, 2017, 第 2 作者
（23） Electrical and optical property of annealed Te-doped GaSb, JOURNAL OF SEMICONDUCTORS, 2017, 第 8 作者
（24） Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection, OPTICS EXPRESS, 2017, 第 1 作者
（25） MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures, JOURNAL OF CRYSTAL GROWTH, 2017, 第 3 作者
（26） Mode competition and power characteristics in terahertz second-order distributed feedback quantum cascade lasers, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 2 作者
（27） 太赫兹二级分布反馈量子级联激光器中的模式竞争与功率特性, Mode competition and power characteristics in terahertz second-order distributed feedback quantum cascade lasers, 红外与毫米波学报, 2017, 第 2 作者
（28） Real-time gamma irradiation effects on long-wavelength InAs/GaSb Type II superlattice infrared detector, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 7 作者
（29） InAs/GaSb Ⅱ类超晶格长波红外探测器的实时γ辐照效应, Real-time γ irradiation effects on long-wavelength InAs/GaSb Type Ⅱ superlattice infrared detector, 红外与毫米波学报, 2017, 第 7 作者
（30） Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes, JOURNAL OF CRYSTAL GROWTH, 2017, 第 2 作者
（31） Terahertz master-oscillator power-amplifier quantum cascade lasers, APPLIED PHYSICS LETTERS, 2016, 第 2 作者
（32） Aspect ratio-related three-photon absorption and mechanism of alpha-FeOOH nanorods in the near-infrared, JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 第 2 作者
（33） InAs-based type-II superlattice long wavelength photodetectors, Proc. Of SPIE, 2016, 第 1 作者
（34） Nonlinear optical enhancement induced by synergistic effect of graphene nanosheets and CdS nanocrystals, APPLIED PHYSICS LETTERS, 2016, 第 2 作者
（35） Enhanced three-photon absorption in CdSe/CdS core/shell nanocrystals in near-infrared, APPLIED PHYSICS EXPRESS, 2016, 第 2 作者
（36） Thermally induced native defect transform in annealed GaSb, CHINESE PHYSICS B, 2016, 第 8 作者
（37） InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization, JOURNAL OF CRYSTAL GROWTH, 2015, 第 1 作者
（38） Studies on abrupt and gradual band gap hole barriers in InAs/GaSb superlattice long wavelength photodetectors, IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS II, 2015, 第 3 作者
（39） High performance InAs/GaSb superlattice long wavelength photodetectors based on barrier enhanced structures, SELECTED PAPERS FROM CONFERENCES OF THE PHOTOELECTRONIC TECHNOLOGY COMMITTEE OF THE CHINESE SOCIETY OF ASTRONAUTICS 2014, PT II, 2015, 第 3 作者
（40） 320 x 256 long wavelength infrared focal plane arrays based on type- II InAs/GaSb superlattice, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2014, 第 5 作者
（41） Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 3 作者
（42） High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region, High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region, 中国物理快报：英文版, 2014, 第 4 作者
（43） High quality mid-wavelength infrared InAs/GaSb superlattices by exploring the optimum molecular beam epitaxy growth process, INFRARED PHYSICS & TECHNOLOGY, 2014, 第 3 作者
（44） High Performance Long Wavelength Superlattice Photodetectors Based on Be Doped Absorber Region, CHINESE PHYSICS LETTERS, 2014, 第 4 作者
（45） Interface design and properties in InAs/GaSb type-II superlattices grown by molecular beam epitaxy, INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2013: INFRARED IMAGING AND APPLICATIONS, 2013, 第 3 作者
（46） The accurate measurement of background carrier concentration in short-period longwave InAs/GaSb superlattices on GaSb substrate, 6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 第 6 作者

   

（ 1 ） 2k×2k大规模高分辨长波超晶格红外焦平面器件关键工艺技术研究, 负责人, 研究所自主部署, 2019-01--2020-12

（1）InAs/GaSb II类超晶格长波红外探测器研究   第十二届全国分子束外延学术会议   2017-08-15
（2）Investigation of long-wave type-II InAs/GaAsSb superlattice photodiodes grown on InAs substrates by molecular beam epitaxy   2016-09-04