140100-集成电路科学与工程

新型存储器件，可靠性表征手段

2014-09--2019-06   中国科学院大学   工学博士
2010-09--2014-06   西安电子科技大学   工学学士

   

2022-01~现在, 中国科学院微电子研究所, 副研究员
2019-07~2022-01,中国科学院微电子研究所, 助理研究员
2014-09~2019-06,中国科学院大学, 工学博士
2010-09~2014-06,西安电子科技大学, 工学学士

   

（1） Deep insights into the mechanism of nitrogen on the endurance enhancement in ferroelectric field effect transistors: Trap behavior during memory window degradation, Applied Physics Letters, 2024, 
（2） Thermal Induced Pr Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism, IEEE Electron Device Letters, 2023, 
（3） First Demonstration of a Bayesian Machine based on Unified Memory and Random Source Achieved by 16-layer Stacking 3D Fe-Diode with High Noise Density and High Area Efficiency, 2023 IEEE International Electron Devices Meeting (IEDM), 2023, 第 1 作者
（4） First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip, 2023 Symposium on VLSI Technology, 2023, 第 1 作者
（5） Low Frequency Noise of Channel-All-Around (CAA) InGaZnO Field Effect Transistors, IEEE Electron Device Letters, 2022, 
（6） Investigation of endurance behavior on HfZrO-based charge-trapping FinFET devices by random telegraph noise and subthreshold swing techniques, IEEE Transactions on Electron Devices, 2021, 第 1 作者
（7） 105 Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications, 2021 Symposium on VLSI Technology, 2021, 第 1 作者
（8） Observation and characterization of recoverable fatigue process under low-electric field (<1.8MV/cm) in HfZrO ferroelectric film, IEEE Electron Device Letters, 2021, 第 1 作者
（9） Resistive switching memory for high density storage and computing, Resistive switching memory for high density storage and computing*, CHINESE PHYSICS B, 2021, 第 3 作者
（10） Wake-Up Effect in HfO2-Based Ferroelectric Films, ADVANCED ELECTRONIC MATERIALS, 2021, 第 4 作者
（11） A 128kb Stochastic Computing Chip based on RRAM Flicker Noise with High Noise Density and Nearly Zero Autocorrelation on 28-nm CMOS Platform, 2021 IEEE International Electron Devices Meeting (IEDM), 2021, 第 1 作者
（12） Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement, IEEE ELECTRON DEVICE LETTERS, 2021, 第 1 作者
（13） A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme, IEEETRANSACTIONSONVERYLARGESCALEINTEGRATIONVLSISYSTEMS, 2020, 第 6 作者
（14） First Demonstration of OxRRAM Integration on 14nm FinFet Platform and Scaling Potential Analysis towards Sub-10nm Node, 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020, 第 3 作者
（15） A highly CMOS compatible hafnia-based ferroelectric diode, NATURE COMMUNICATIONS, 2020, 第 10 作者
（16） A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 第 5 作者
（17） Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System, IEEE ELECTRON DEVICE LETTERS, 2019, 第 5 作者
（18） Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 3 作者
（19） A 0.75V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique, IEICE ELECTRONICS EXPRESS, 2019, 第 7 作者
（20） Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films, IEEE ELECTRON DEVICE LETTERS, 2019, 第 8 作者
（21） Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer Structure, NANOSCALE RESEARCH LETTERS, 2019, 第 3 作者
（22） Suppression of filament overgrowth in conductive bridge random access memory by tao/tao bi-layer structure., NANOSCALE RESEARCH LETTERS, 2019, 第 3 作者
（23） Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements, IEEE ELECTRON DEVICE LETTERS, 2018, 第 1 作者
（24） Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application, IEEE ELECTRON DEVICE LETTERS, 2018, 第 4 作者
（25） 40x Retention Improvement by Eliminating Resistance Relaxation with High Temperature Forming in 28 nm RRAM Chip, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018, 第 3 作者
（26） Analysis of tail bits generation of multilevel storage in resistive switching memory, Analysis of tail bits generation of multilevel storage in resistive switching memory, 中国物理B：英文版, 2018, 第 4 作者
（27） Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory, IEEE ELECTRON DEVICE LETTERS, 2018, 第 1 作者
（28） Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects, 2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018, 第 2 作者
（29） The Impact of RTN Signal on Array Level Resistance Fluctuation of Resistive Random Access Memory, IEEE ELECTRON DEVICE LETTERS, 2018, 第 7 作者
（30） A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 第 5 作者
（31） Analysis of tail bits generation of multilevel storage in resistive switching memory, CHINESE PHYSICS B, 2018, 第 4 作者
（32） Switching and Failure Mechanism of Self-selective Cell in 3D VRRAM by RTN-based Defect Tracking Technique, 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2018, 第 1 作者
（33） Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x/Hf Stack, NANOSCALE RESEARCH LETTERS, 2017, 第 7 作者
（34） Endurance characterization of the Cu-dope HfO2 based selection device with One Transistor-One Selector structure, 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM), 2017, 第 4 作者
（35） BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond, Electron Devices Meeting (IEDM) 2017 IEEE International, 2017, 第 6 作者
（36） Endurance characterization of the Cu-dope HfO2 based selection device with One Transistor-One Selector structure, 2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM), 2017, 第 6 作者
（37） 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications, Electron Devices Meeting（IEDM）2017 IEEE International, 2017, 第 9 作者
（38） Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt 2 O 5 2- x, NANOSCALE RESEARCH LETTERS, 2017, 第 7 作者
（39） Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering, IEEE ELECTRON DEVICE LETTERS, 2017, 第 1 作者
（40） Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nanocrossbar memory array, NANO RESEARCH, 2017, 第 4 作者
（41） Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays, NANOSCALE, 2016, 第 5 作者
（42） Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell enabling sub-5nm scaling, 2016, 第 3 作者
（43） Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory Cells, Tech. Dig.-Int. Electron Devices Meet (IEDM), 2015, 第 4 作者
（44） Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory With Single Filament Formation, IEEE ELECTRON DEVICE LETTERS, 2015, 第 4 作者
（45） Investigation of LRS dependence on the retention of HRS in CBRAM, NANOSCALE RESEARCH LETTERS, 2015, 第 5 作者

   

（ 1 ） 中国科学院青年创新促进会, 负责人, 中国科学院计划, 2023-01--2026-12
（ 2 ） 中国科协青年人才托举工程项目, 负责人, 国家任务, 2022-01--2024-12