070205-凝聚态物理

氮化物半导体材料与器件

2003-09--2009-07   清华大学   博士
1999-09--2003-07   清华大学   学士

   

2023-09~现在, 中国科学院物理研究所, 研究员
2012-08~2023-09,中国科学院物理研究所, 副研究员
2009-07~2012-08,中国科学院物理研究所, 助理研究员
2003-09~2009-07,清华大学, 博士
1999-09~2003-07,清华大学, 学士

   

（1） 预成核对蓝宝石衬底上生长氮化镓低温层的影响, Influence of Pre-Nucleation on Growth of GaN Low Temperature Layer on Sapphire Substrate, 真空科学与技术学报, 2023, 第 7 作者
（2） Opto-electrical and polarization performance of a mesa-structured InGaAs PIN detector integrated with subwavelength aluminum gratings, Optics Letters, 2022, 第 6 作者
（3） Ultra-small size (1-20 mu m) blue and green micro-LEDs fabricated by laser direct writing lithography, APPLIED PHYSICS LETTERS, 2022, 第 7 作者
（4） Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array, OPTICS COMMUNICATIONS, 2021, 第 7 作者
（5） Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes, VACUUM, 2021, 第 5 作者
（6） Enhanced light extraction from AlGaInP-based red light- emitting diodes with photonic crystals, OPTICS EXPRESS, 2021, 第 5 作者
（7） 量子阱带间跃迁探测器基础研究（特邀）, Fundamental researches on the quantum well interband transition detector(Invited), 红外与激光工程, 2021, 第 8 作者
（8） Origin of anomalous enhancement of the absorption coefficient in a PN junction, Origin of anomalous enhancement of the absorption coefficient in a PN junction, Chinese Physics B, 2021, 第 10 作者  通讯作者
（9） Effect of H2 treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes, SUPERLATTICES AND MICROSTRUCTURES, 2020, 第 13 作者  通讯作者
（10） Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p-n junction engineering, JOURNAL OF APPLIED PHYSICS, 2020, 第 6 作者
（11） Fabrication, structural and optical properties of a virtual GeSi template by Ge filling the porous Si prepared by EC etching, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 第 7 作者
（12） Research on photo-generated carriers escape in PIN and NIN structures with quantum wells, APPLIEDPHYSICSEXPRESS, 2020, 第 9 作者  通讯作者
（13） The influence of excessive H-2 during barrier growth on InGaN light-emitting diodes, MATERIALS RESEARCH EXPRESS, 2020, 第 14 作者  通讯作者
（14） Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current, Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current, PHOTONICS RESEARCH, 2020, 第 6 作者
（15） Characterization of edge dislocation density through X-ray diffraction rocking curves, JOURNAL OF CRYSTAL GROWTH, 2020, 第 13 作者  通讯作者
（16） Preparation for industrial pellet production from blends of eucalyptus sawdust and hydrolysis lignin: the optimal variable combinations of co-pelletization, GENETICSINMEDICINE, 2020, 第 4 作者
（17） Electro-photoluminescence study in InGaAs/AlGaAs multi-quantum-wells, EPL, 2020, 第 6 作者
（18） Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer, Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer, Chinese Physics Letters, 2020, 第 13 作者  通讯作者
（19） Effect of Dopant Concentration in a Base Layer on Photocurrent–Voltage Characteristics of Photovoltaic Power Converters, Effect of Dopant Concentration in a Base Layer on Photocurrent���Voltage Characteristics of Photovoltaic Power Converters, Chinese Physics Letters, 2020, 第 6 作者
（20） Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate, Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate, Chinese Physics B, 2020, 第 6 作者
（21） Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch conditions, APPLIED PHYSICS EXPRESS, 2019, 第 6 作者
（22） Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate, APPLIED PHYSICS EXPRESS, 2019, 第 12 作者  通讯作者
（23） The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth, APPLIED PHYSICS EXPRESS, 2019, 第 7 作者
（24） Improved crystal quality of non-polar a-plane GaN epi-layers directly grown on optimized hole-array patterned r-sapphire substrates, CRYSTENGCOMM, 2019, 第 2 作者
（25） Visualizing carrier transitions between localization states in a InGaN yellow-green light-emitting-diode structure, JOURNAL OF APPLIED PHYSICS, 2019, 第 7 作者  通讯作者
（26） Characterization and optimization of AlN nucleation layer for nonpolar a-plane GaN grown on r-plane sapphire substrate, SUPERLATTICES AND MICROSTRUCTURES, 2019, 第 12 作者  通讯作者
（27） Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction, Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction, Chinese Physics Letters, 2019, 第 9 作者
（28） Fabrication of large-scale uniform submicron inverted pyramid pit arrays on silicon substrates by laser interference lithography, VACUUM, 2019, 第 7 作者
（29） Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction, Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction, 中国物理B：英文版, 2018, 第 2 作者
（30） Rectifying behavior in the gan/graded-alxga1?xn/gan double heterojunction structure, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 第 2 作者
（31） 基于p-n结中反常光电转换现象的新型带间跃迁量子阱红外探测器, Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector, ACTA PHYSICA SINICA, 2018, 第 6 作者
（32） 基于p-n结中反常光电转换现象的新型带间跃迁量子阱红外探测器, Anomalous light-to-electricity conversion of low dimensional semiconductor in p-n junction and interband transition quantum well infrared detector, ACTA PHYSICA SINICA, 2018, 第 6 作者
（33） Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction, Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction, Chinese Physics B, 2018, 第 2 作者
（34） Anomalous enhancement of the absorption coefficient of GaAs in a p-n junction, SUPERLATTICES AND MICROSTRUCTURES, 2018, 第 5 作者
（35） Characteristics of InGaP/GaAs double junction thin film solar cells on a flexible metallic substrate, SOLAR ENERGY, 2018, 第 4 作者
（36） Effect of SU-8 Passivation Layer Induced Stress on the Performance of GaSb Diode, IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 第 3 作者
（37） 1.0eV GaAs基InAs量子点太阳能电池, 1.0 eV GaAs based InAs quantum dot solar cells, 科学通报, 2017, 第 3 作者
（38） Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type, JOURNAL OF CRYSTAL GROWTH, 2017, 第 5 作者
（39） Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure, Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure, Chinese Physics B, 2017, 第 2 作者
（40） 基于量子阱带间跃迁的红外探测器原型器件, A prototype photon detector based on interband transition of quantum wells, 红外与毫米波学报, 2017, 第 3 作者
（41） The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications, SCIENTIFIC REPORTS, 2017, 第 3 作者
（42） A prototype photon detector based on interband transition of quantum wells, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2017, 第 3 作者
（43） 基于量子阱带间跃迁的红外探测器原型器件, A prototype photon detector based on interband transition of quantum wells, 红外与毫米波学报, 2017, 第 3 作者
（44） Carrier transport in III-V quantum-dot structures for solar cells or photodetectors, Carrier transport in III���V quantum-dot structures for solar cells or photodetectors, Chinese Physics B, 2016, 第 3 作者
（45） Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors, Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors, 中国物理快报：英文版, 2016, 第 3 作者
（46） Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors, Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors, Chinese Physics Letters, 2016, 第 3 作者
（47） Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction, Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction, Chinese Physics B, 2016, 第 3 作者
（48） Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer, OPTICAL AND QUANTUM ELECTRONICS, 2016, 第 8 作者  通讯作者
（49） Efficiency enhancement of InGaN/GaN multiple quantum wells with graphene layer, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 第 3 作者  通讯作者
（50） Investigation of temperature-dependent photoluminescence in multi-quantum wells, SCIENTIFIC REPORTS, 2015, 第 7 作者
（51） A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 第 6 作者
（52） A novel method to reduce the period limitation in laser interference lithography, OPTICAL AND QUANTUM ELECTRONICS, 2015, 第 4 作者
（53） Realization of high-luminous-efficiency InGaN light-emitting diodes in the "green gap" range, SCIENTIFIC REPORTS, 2015, 第 1 作者
（54） Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N-2 environment, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 第 2 作者
（55） Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs, JOURNAL OF DISPLAY TECHNOLOGY, 2014, 第 6 作者
（56） Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
（57） Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
（58） Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 第 6 作者
（59） Indium segregation measured in InGaN quantum well layer, SCIENTIFIC REPORTS, 2014, 第 2 作者
（60） GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer, GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer, Chinese Physics Letters, 2014, 第 2 作者  通讯作者
（61） Improved Photoluminescence in InGaN/GaN Strained Quantum Wells, Improved Photoluminescence in InGaN/GaN Strained Quantum Wells, Chinese Physics Letters, 2014, 第 4 作者
（62） Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography, NANOPHOTONICS AND MICRO/NANO OPTICS II, 2014, 第 4 作者
（63） The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD, The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD, Chinese Physics Letters, 2013, 第 2 作者  通讯作者
（64） Influence of Si doping on the structural and optical properties of InGaN epilayers, Influence of Si doping on the structural and optical properties of InGaN epilayers, 中国物理B：英文版, 2013, 第 7 作者
（65） Influence of Si doping on the structural and optical properties of InGaN epilayers, Influence of Si doping on the structural and optical properties of InGaN epilayers, Chinese Physics B, 2013, 第 7 作者
（66） Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 第 2 作者
（67） Analyses of 2-DEG characteristics in GaN HEMT with AlN, NANOSCALE RESEARCH LETTERS, 2012, 第 2 作者
（68） Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD, NANOSCALERESEARCHLETTERS, 2012, 第 2 作者  通讯作者
（69） The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2011, 第 8 作者
（70） 国产SiC衬底上利用AlN缓冲层生长高质量GaN外延薄膜, High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition, 发光学报, 2011, 第 4 作者
（71） The Optical and Electrical Properties of GaN Epitaxial Films with SiNx Interlayers Inserted at Different Position, 发光学报, 2011, 第 6 作者
（72） SiN_x插入层的生长位置对GaN外延薄膜性质的影响（英文）, The Optical and Electrical Properties of GaN Epitaxial Films with SiN_x Interlayers Inserted at Different Position, 发光学报, 2011, 第 6 作者
（73） 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性, Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures, 发光学报, 2011, 第 3 作者
（74） Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition, Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition, Chinese Physics Letters, 2011, 第 2 作者
（75） The impact of nanoporous SiN (x) interlayer growth position on high-quality GaN epitaxial films, CHINESE SCIENCE BULLETIN, 2011, 第 8 作者
（76） Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate, ENERGY & ENVIRONMENTAL SCIENCE, 2011, 第 1 作者  通讯作者
（77） 以创新技术推动LED照明产业的发展, 新材料产业, 2011, 第 2 作者