基本信息
王浩敏  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: hmwang@mail.sim.ac.cn
通信地址: 上海市长宁路865号
邮政编码: 200050

研究领域

2004年以来,瞄准石墨烯研究的国际前沿,围绕石墨烯在微电子应用面临的主要科学问题进行持续创新,探索其微电子学应用的发展方向及技术路线,拓展其在集成电路、计量等领域的应用,在石墨烯纳米带制备及其器件方面形成特色鲜明的系统研究。在Nat. Mater.,Nat.Rev.Phys., Nat. Comm.等刊物上发表论文53余篇,总它引6100次。授权国内专利29件,国际专利6件。嵌入氮化硼的石墨烯纳米带相关成果曾被Nature Nanotech.杂志做亮点报道。作为负责人和项目骨干承担国家重大专项、国家自然科学基金、中科院重点部署项目、中科院战略性先导专项项目课题、国家重点研发计划项目和上海市科委项目等多项科研项目。

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
新型信息功能材料与器件
新型功能材料器件与集成电路
新型功能器件与系统集成

教育背景

2004-08--2008-09   新加坡国立大学   工学博士(电气与电脑工程)
1999-09--2002-07   华中科技大学   工学硕士(微电子学与固体电子学)
1995-09--1999-06   华中理工大学   工学学士(电子材料与元器件)

工作经历

   
工作简历
2011-10~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2009-05~2011-10,新加坡南洋理工大学, 博士后
2008-09~2009-05,新加坡国立大学, 博士后
2002-07~2004-08,上海信息安全基础设施研究中心, 高级工程师
社会兼职
2022-06-30-2025-06-30,ERC Consolidator 2022, remote referee

专利与奖励

   
奖励信息
(1) 高质量石墨烯电子材料制备研究, 一等奖, 省级, 2019
专利成果
[1] 张学富, 吴天如, 王浩敏, 于庆凯, 谢晓明. 一种铜基织构薄膜衬底上制备石墨烯单晶晶圆的方法. 202010620665.8, 2022-07-05.
[2] 时志远, 吴天如, 卢光远, 王秀君, 张超, 王浩敏, 谢晓明. 多层六方氮化硼薄膜的制备方法. 特许第7083406号, 2022-06-02.
[3] 王浩敏, 王祎博, 王慧山, 肖相生, 王伟. 小型量子电阻标准器. CN: CN114200373A, 2022-03-18.
[4] 王浩敏, 姜程鑫, 王慧山, 肖相生, 王伟. 六方氮化硼表面扭转双层石墨烯及其制备方法. CN: CN113979429A, 2022-01-28.
[5] 宋志棠, 周夕淋, 王浩敏, 宋三年. 一种高性能相变存储器及其制备方法. 202111106532.X, 2021-09-22.
[6] 张学富, 吴天如, 王浩敏, 于庆凯, 谢晓明. 一种面内呈60°夹角的镍铜(111)孪晶薄膜及其制备方法. CN: CN112837993A, 2021-05-25.
[7] 张学富, 吴天如, 王浩敏, 于庆凯, 谢晓明. 一种铜基织构薄膜衬底上制备石墨烯单晶晶圆的方法. CN: CN111705359A, 2020-09-25.
[8] 时志远, 吴天如, 卢光远, 王秀君, 张超, 王浩敏, 谢晓明. 多层六方氮化硼薄膜的制备方法. CN: CN110921637A, 2020-03-27.
[9] 张学富, 王浩敏, 吴天如, 于庆凯, 谢晓明. 一种低温制备石墨烯单晶晶圆的方法. CN: CN109205599A, 2019-01-15.
[10] 张学富, 王浩敏, 吴天如, 谢晓明. 一种镍铜(111)合金单晶薄膜的制备方法以及由此得到的镍铜(111)合金单晶薄膜. CN: CN108754608A, 2018-11-06.
[11] 王浩敏, 谢红, 王慧山, 王秀君, 陈令修, 贺立, 谢晓明. 一种石墨烯‑硒化铌超导异质结器件及其制备方法. CN: CN107634089A, 2018-01-26.
[12] 王浩敏, 陈令修, 贺立, 王慧山, 谢红, 王秀君, 谢晓明. 石墨烯边界调控方法. CN: CN107500277A, 2017-12-22.
[13] 陈吉, 吴天如, 王浩敏, 谢晓明. 一种转移石墨烯的方法. CN: CN106185900A, 2016-12-07.
[14] 王浩敏, 谢红, 李蕾, 王慧山, 杨鹏, 谢晓明, 江绵恒. 一种量子干涉器件结构及其制备方法. CN: CN106058036A, 2016-10-26.
[15] 王浩敏, 谢红, 王慧山, 王秀君, 谢晓明, 江绵恒. 一种新型量子霍尔器件及其制备方法. CN: CN106025061A, 2016-10-12.
[16] 王浩敏, 谢红, 李蕾, 王慧山, 谢晓明. 一种用于磁场屏蔽的半导体器件及其制作方法. CN: CN106024760A, 2016-10-12.
[17] 杨超, 吴天如, 卢光远, 张学富, 王浩敏, 谢晓明, 江绵恒. 一种金属蒸气辅助快速生长少层石墨烯的制备方法. CN: CN105779964A, 2016-07-20.
[18] 王浩敏, 谢红, 王慧山, 李蕾, 谢晓明, 江绵恒. 一种高灵敏度石墨烯磁场传感器及其制备方法. CN: CN105405965A, 2016-03-16.
[19] 王浩敏, 谢红, 李蕾, 王慧山, 贺立, 陈令修, 张道礼, 邓联文, 谢晓明, 江绵恒. 一种以石墨烯作为接触电极的器件结构及其制备方法. CN: CN105070347A, 2015-11-18.
[20] 王浩敏, 谢红, 贺立, 王慧山, 陈令修, 李蕾, 吴天如, 张道礼, 谢晓明, 江绵恒. 一种氮化硼衬底表面台阶刻蚀方法. CN: CN104992905A, 2015-10-21.
[21] 陈吉, 卢光远, 吴天如, 王慧山, 张学富, 王浩敏. 一种石墨烯-氮化硼异质结的制备方法. CN: CN104944417A, 2015-09-30.
[22] 吴天如, 张学富, 卢光远, 杨超, 王浩敏, 谢晓明, 江绵恒. 局域供碳装置及局域供碳制备晶圆级石墨烯单晶的方法. CN: CN104928649A, 2015-09-23.
[23] 王浩敏, 谢红, 李蕾, 王慧山, 贺立, 陈令修, 吴天如, 邓联文, 谢晓明, 江绵恒. 一种基于石墨烯场效应管微区加热的原位生长材料的方法. CN: CN104894639A, 2015-09-09.
[24] 王浩敏, 贺立, 陈令修, 谢红, 王慧山, 唐述杰, 李蕾, 张道礼, 谢晓明, 江绵恒. h-BN上石墨烯纳米带的制备方法. CN: CN104726845A, 2015-06-24.
[25] 王浩敏, 唐述杰, 卢光远, 吴天如, 姜达, 丁古巧, 张学富, 谢红, 谢晓明, 江绵恒. 石墨烯的生长方法. CN: CN104562195A, 2015-04-29.
[26] 王浩敏, 谢红, 王慧山, 李蕾, 卢光远, 张学富, 陈吉, 吴天如, 谢晓明, 江绵恒. 一种石墨烯闪存存储器的制备方法. CN: CN104192835A, 2014-12-10.
[27] 王浩敏, 谢红, 王慧山, 孙秋娟, 卢光远, 陈吉, 张学富, 吴天如, 谢晓明, 江绵恒. 一种降低石墨烯与电极接触电阻的方法. CN: CN103943512A, 2014-07-23.
[28] 王浩敏, 谢红, 王慧山, 孙秋娟, 陈吉, 张学富, 吴天如, 谢晓明, 江绵恒. 一种柔性衬底上制备石墨烯器件的方法. CN: CN103943513A, 2014-07-23.
[29] 王慧山, 王浩敏, 孙秋娟, 刘晓宇, 谢红, 陈吉, 吴天如, 张学富, 邓联文, 谢晓明. 一种基于石墨烯场效应管的微区加热方法及结构. CN: CN103839835A, 2014-06-04.
[30] 卢光远, 吴天如, 宋阳曦, 王浩敏, 谢晓明, 江绵恒. 一种制备六方氮化硼薄膜的方法. CN: CN103774113A, 2014-05-07.
[31] 王浩敏, 王玲, 张燕, 谢晓明, 刘建影. 一种基于石墨烯的芯片散热材料的制备方法. CN: CN103779292A, 2014-05-07.
[32] 王浩敏, 谢红, 孙秋娟, 王慧山, 吴天如, 谢晓明, 江绵恒. 石墨烯器件的制作方法. CN: CN103646855A, 2014-03-19.
[33] 王浩敏, 王玲, 张燕, 刘建影, 谢晓明. 一种基于竖直石墨烯的散热材料的制备方法. CN: CN103553029A, 2014-02-05.
[34] 王浩敏, 谢红, 孙秋娟, 王慧山, 吴天如, 谢晓明. 石墨烯场效应管的制作方法. CN: CN103531482A, 2014-01-22.
[35] 王浩敏, 谢红, 吴天如, 孙秋娟, 王慧山, 宋阳曦, 刘晓宇, 唐述杰, 谢晓明. 基于石墨烯的隧穿场效应管单元、阵列及其形成方法. CN: CN103400859A, 2013-11-20.
[36] 王浩敏, 孙秋娟, 谢红, 谢晓明. 一种基于竖直石墨烯的场发射电极的图形化制备方法. CN: CN103280404A, 2013-09-04.
[37] 谢红, 王浩敏, 孙秋娟, 刘晓宇, 谢晓明. 一种绝缘衬底上的电子束曝光图形化方法. CN: CN103176354A, 2013-06-26.
[38] 孙秋娟, 王浩敏, 左青云, 康晓旭, 谢红, 邓联文, 谢晓明, 江绵恒. 薄膜图形化方法. CN: CN103151245A, 2013-06-12.
[39] 王浩敏, 谢红, 孙秋娟, 康晓旭, 刘晓宇, 谢晓明. 一种基于栅介质结构的石墨烯场效应器件及其制备方法. CN: CN102931057A, 2013-02-13.
[40] 王浩敏, 谢红, 刘晓宇, 张有为, 陈志蓥, 于广辉, 谢晓明. 一种石墨烯场效应器件制备方法. CN: CN102915929A, 2013-02-06.
[41] 王浩敏, 张有为, 沈大伟, 杨喜超, 谢晓明. 一种于石墨烯表面制备高k栅介质薄膜的方法. CN: CN102856185A, 2013-01-02.
[42] 王浩敏, 张有为, 杨喜超, 谢晓明. 一种于多层石墨烯表面制备高k栅介质的方法. CN: CN102856184A, 2013-01-02.

出版信息

   
发表论文
[1] Chen, Lingxiu, Wang, HuiShan, Kong, Ziqiang, Zhai, Changwei, Wang, Xiujun, Wang, Yibo, Liu, Zhengtai, Jiang, Chengxin, Chen, Chen, Shen, Dawei, Chen, Xipin, Zhu, Yuxuan, Bao, Wenzhong, Yang, Zhenyu, Lu, Yunfeng, Wang, Haomin. Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device. ADVANCED MATERIALS TECHNOLOGIES[J]. 2023, 8(2): [2] Yibo Wang, Huishan Wang, Chengxin Jiang, Xipin Chen, Chen Chen, Ziqiang Kong, Haomin Wang. Plasma assisted approaches toward high quality transferred synthetic graphene for electronics. NANO EXPRESS[J]. 2023, 4(1): https://doaj.org/article/258f6ef768e340d797321f4f915e9ace.
[3] Jiang, Chengxin, Chen, Lingxiu, Wang, Huishan, Chen, Chen, Wang, Xiujun, Kong, Ziqiang, Wang, Yibo, Wang, Haomin, Xie, Xiaoming. Increasing coverage of mono-layer graphene grown on hexagonal boron nitride. NANOTECHNOLOGY[J]. 2023, 34(16): http://dx.doi.org/10.1088/1361-6528/acb4f5.
[4] Ge, Yang, Chen, Lingxiu, Jiang, Chengxin, Ji, Jianlong, Tan, Qiuyun, Pan, Douxing, Zhang, Wendong, Zhang, Riguang, Janzen, Eli, Edgar, James H, Sang, Shengbo, Wang, Haomin. Edge magnetism of triangular graphene nanoflakes embedded in hexagonal boron nitride. CARBON[J]. 2023, 203: 59-67, http://dx.doi.org/10.1016/j.carbon.2022.11.034.
[5] Liang, Chenhui, Sha, Yating, Huang, Jingxian, Zhang, Chao, Su, Shubin, Li, Hao, Wang, Guohua, Liu, Kaihui, Wang, Fei, Wang, Haomin, Luo, Weidong, Chen, Guorui, Wu, Tianru, Xie, Xiaoming, Qian, Dong, Tao, Haihua. Oxidizing Hexagonal Boron Nitride into Fluorescent Structures byPhotodissociated Directional Oxygen Radical br. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2022, 13(15): 3369-3376, http://dx.doi.org/10.1021/acs.jpclett.2c00284.
[6] Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie. Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact. ADVANCED SCIENCE[J]. 2022, 9(25): n/a-n/a, https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9443440/.
[7] Zhang, Shuai, Yao, Quanzhou, Chen, Lingxiu, Jiang, Chengxin, Ma, Tianbao, Wang, Haomin, Feng, XiQiao, Li, Qunyang. Dual-Scale Stick-Slip Friction on Graphene/h-BN Moire Superlattice Structure. PHYSICAL REVIEW LETTERS[J]. 2022, 128(22): [8] Chen, Chen, He, Li, Jiang, Chengxin, Chen, Lingxiu, Wang, Hui Shan, Wang, Xiujun, Kong, Ziqiang, Mu, Xiaojing, Wei, Zhipeng, Watanabe, Kenji, Taniguchi, Takashi, Wu, Tianru, Zhang, Daoli, Wang, Haomin. Directional etching for high aspect ratio nano-trenches on hexagonal boron nitride by catalytic metal particles. 2D MATERIALS[J]. 2022, 9(2): http://dx.doi.org/10.1088/2053-1583/ac5461.
[9] Liang, Chenhui, Sha, Yating, Huang, Jingxian, Zhang, Chao, Su, Shubin, Li, Hao, Wang, Guohua, Liu, Kaihui, Wang, Fei, Wang, Haomin, Luo, Weidong, Chen, Guorui, Wu, Tianru, Xie, Xiaoming, Qian, Dong, Tao, Haihua. Oxidizing Hexagonal Boron Nitride into Fluorescent Structures byPhotodissociated Directional Oxygen Radical. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2022, 13(15): 3369-3376, http://dx.doi.org/10.1021/acs.jpclett.2c00284.
[10] Huang, Xiong, Chen, Lingxiu, Tang, Shujie, Jiang, Chengxin, Chen, Chen, Wang, Huishan, Shen, ZhiXun, Wang, Haomin, Cui, YongTao. Imaging Dual-Moire Lattices in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride Using Microwave Impedance Microscopy. NANO LETTERS[J]. 2021, 21(10): 4292-4298, http://dx.doi.org/10.1021/acs.nanolett.1c00601.
[11] Chen, Lingxiu, Elibol, Kenan, Cai, Haifang, Jiang, Chengxin, Shi, Wenhao, Chen, Chen, Wang, Hui Shan, Wang, Xiujun, Mu, Xiaojing, Li, Chen, Watanabe, Kenji, Taniguchi, Takashi, Guo, Yufeng, Meyer, Jannik C, Wang, Haomin. Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride. 2D MATERIALS[J]. 2021, 8(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000605937500001.
[12] Wang, Hui Shan, Chen, Lingxiu, Elibol, Kenan, He, Li, Wang, Haomin, Chen, Chen, Jiang, Chengxin, Li, Chen, Wu, Tianru, Cong, Chun Xiao, Pennycook, Timothy J, Argentero, Giacomo, Zhang, Daoli, Watanabe, Kenji, Taniguchi, Takashi, Wei, Wenya, Yuan, Qinghong, Meyer, Jannik C, Xie, Xiaoming. Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride. NATURE MATERIALS[J]. 2021, 20(2): 202-+, http://dx.doi.org/10.1038/s41563-020-00806-2.
[13] Jiang ChengXin, Chen LingXiu, Wang HuiShan, Wang XiuJun, Chen Chen, Wang HaoMin, Xie XiaoMing. Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer. ACTA PHYSICA SINICA[J]. 2021, 70(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000631862800036.
[14] Wang, Haomin, Wang, Hui Shan, Ma, Chuanxu, Chen, Lingxiu, Jiang, Chengxin, Chen, Chen, Xie, Xiaoming, Li, AnPing, Wang, Xinran. Graphene nanoribbons for quantum electronics. NATURE REVIEWS PHYSICSnull. 2021, 3(12): 791-802, http://dx.doi.org/10.1038/s42254-021-00370-x.
[15] 姜程鑫, 陈令修, 王慧山, 王秀君, 陈晨, 王浩敏, 谢晓明. 六方氮化硼层间气泡制备与压强研究. 物理学报[J]. 2021, 70(6): 372-378, http://lib.cqvip.com/Qikan/Article/Detail?id=7104157212.
[16] Zhang, Shuai, Song, Aisheng, Chen, Lingxiu, Jiang, Chengxin, Chen, Chen, Gao, Lei, Hou, Yuan, Liu, Luqi, Ma, Tianbao, Wang, Haomin, Feng, XiQiao, Li, Qunyang. Abnormal conductivity in low-angle twisted bilayer graphene. SCIENCE ADVANCES[J]. 2020, 6(47): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7679157/.
[17] Yang, Peng, Shan, Yabing, Chen, Jing, Ekoya, Garel, Han, Jinkun, Qiu, ZhiJun, Sun, Junjie, Chen, Fei, Wang, Haomin, Bao, Wenzhong, Hu, Laigui, Zhang, RongJun, Liu, Ran, Cong, Chunxiao. Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates. NANOSCALE[J]. 2020, 12(3): 1958-1966, https://www.webofscience.com/wos/woscc/full-record/WOS:000509545700067.
[18] Wang, Xiujun, Wang, HuiShan, Chen, Lingxiu, He, Li, Chen, Chen, Jiang, Chengxin, Qiu, Zhijun, Wang, Haomin, Xie, Xiaoming. Weak localization in graphene sandwiched by aligned h-BN flakes. NANOTECHNOLOGY[J]. 2020, 31(21): https://www.webofscience.com/wos/woscc/full-record/WOS:000520169300001.
[19] Zhiyuan Shi, Xiujun Wang, Qingtian Li, Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu, Haomin Wang, Qingkai Yu, Xiaoming Xie. Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates. NATURE COMMUNICATIONS[J]. 2020, 11(1): 1-8, http://gooa.las.ac.cn/external/index?type=-1&pid=1570291.
[20] Lu, Guangyuan, Zhang, Guanhua, Sun, Julong, Wang, Xiujun, Shi, Zhiyuan, Jiang, Da, Wang, Haomin, Li, Ang, Wu, Tianru, Yu, Qingkai, Xie, Xiaoming. Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy. CARBON[J]. 2019, 152: 521-526, http://dx.doi.org/10.1016/j.carbon.2019.06.040.
[21] Yang Peng, Yang Aiguo, Chen Lingxiu, Chen Jing, Zhang Youwei, Wang Haomin, Hu Laigui, Zhang Rongjun, Liu Ran, Qu Xinping, Qiu Zhijun, Cong Chunxiao. Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide. NANO RESEARCH[J]. 2019, 12(4): 823-827, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6455362&detailType=1.
[22] Ren, Xibiao, Dong, Jichen, Yang, Peng, Li, Jidong, Lu, Guangyuan, Wu, Tianru, Wang, Haomin, Guo, Wanlin, Zhang, Ze, Ding, Feng, Jin, Chuanhong. Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride. PHYSICAL REVIEW MATERIALS[J]. 2019, 3(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000456298300002.
[23] Chen LingXiu, Wang HuiShan, Jiang ChengXin, Chen Chen, Wang HaoMin. Synthesis and characterization of graphene nanoribbons on hexagonal boron nitride. ACTA PHYSICA SINICA[J]. 2019, 68(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000483384000032.
[24] G. X. Ni, H. Wang, B.Y. Jiang, L. X. Chen, Y. Du, Z. Y. Sun, M. D. Goldflam, A. J. Frenzel, X. M. Xie, M. M. Fogler, D. N. Basov. Soliton superlattices in twisted hexagonal boron nitride. NATURE COMMUNICATIONS[J]. 2019, 10(1): 1-6, http://gooa.las.ac.cn/external/index?type=-1&pid=1522674.
[25] Li He, Huishan Wang, Lingxiu Chen, Xiujun Wang, Hong Xie, Chengxin Jiang, Chen Li, Kenan Elibol, Jannik Meyer, Kenji Watanabe, Takashi Taniguchi, Zhangting Wu, Wenhui Wang, Zhenhua Ni, Xiangshui Miao, Chi Zhang, Daoli Zhang, Haomin Wang, Xiaoming Xie. Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment. NATURE COMMUNICATIONS[J]. 2019, 10(1): 1-9, http://gooa.las.ac.cn/external/index?type=-1&pid=1501571.
[26] 陈令修, 王慧山, 姜程鑫, 陈晨, 王浩敏. 六方氮化硼表面石墨烯纳米带生长与物性研究. 物理学报[J]. 2019, 68(16): 91-103, http://lib.cqvip.com/Qikan/Article/Detail?id=7002754414.
[27] Zhang, Xuefu, Wu, Tianru, Jiang, Qi, Wang, Huishan, Zhu, Hailong, Chen, Zhiying, Jiang, Ren, Niu, Tianchao, Li, Zhuojun, Zhang, Youwei, Qiu, Zhijun, Yu, Guanghui, Li, Ang, Qiao, Shan, Wang, Haomin, Yu, Qingkai, Xie, Xiaoming. Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition. SMALL[J]. 2019, 15(22): [28] Cong, Chunxiao, Zou, Chenji, Cao, Bingchen, Wu, Lishu, Shang, Jingzhi, Wang, Haomin, Qiu, Zhijun, Hu, Laigui, Tian, Pengfei, Liu, Ran, Yu, Ting. Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride. NANO RESEARCH[J]. 2018, 11(12): 6227-6236, http://dx.doi.org/10.1007/s12274-018-2142-5.
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[30] Chen, Lingxiu, Wang, Haomin, Tang, Shujie, He, Li, Wang, Hui Shan, Wang, Xiujun, Xie, Hong, Wu, Tianru, Xia, Hui, Li, Tianxin, Xie, Xiaoming. Edge control of graphene domains grown on hexagonal boron nitride. NANOSCALE[J]. 2017, 9(32): 11475-11479, [31] Tian, Suyun, He, Peng, Chen, Lingxiu, Wang, Haomin, Ding, Guqiao, Xie, Xiaoming. Electrochemical Fabrication of High Quality Graphene in Mixed Electrolyte for Ultrafast Electrothermal Heater. CHEMISTRY OF MATERIALS[J]. 2017, 29(15): 6214-6219, https://www.webofscience.com/wos/woscc/full-record/WOS:000407522300008.
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[33] Lingxiu Chen, Li He, Hui Shan Wang, Haomin Wang, Shujie Tang, Chunxiao Cong, Hong Xie, Lei Li, Hui Xia, Tianxin Li, Tianru Wu, Daoli Zhang, Lianwen Deng, Ting Yu, Xiaoming Xie, Mianheng Jiang. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches. NATURE COMMUNICATIONS[J]. 2017, 8(1): https://doaj.org/article/811710cd812941d08ddb83ea9b354e50.
[34] Haomin Wang. Chemical vapor deposition of graphene on insulating substrates and its potential applications. 2017, [35] 杨超, 吴天如, 王浩敏, 谢晓明. 绝缘衬底上石墨烯的化学气相沉积制备与器件应用. 科学通报[J]. 2017, 2168-2179, [36] 杨鹏, 吴天如, 王浩敏, 卢光远, 邓联文, 黄生祥. 化学气相沉积法在Cu-Ni合金衬底上生长多层六方氮化硼. 科学通报[J]. 2017, 62(20): 2279-2286, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6041531&detailType=1.
[37] Yang, Chao, Wu, Tianru, Wang, Haomin, Zhang, Xuefu, Shi, Zhiyuan, Xie, Xiaoming. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates. APPLIED PHYSICS LETTERS[J]. 2017, 111(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000406779700041.
[38] Lu, Guangyuan, Wu, Tianru, Wang, Haomin, Yang, Peng, Shi, Zhiyuan, Yang, Chao, Xie, Xiaoming. Synthesis of continuous hexagonal boron nitride films on alloy substrate. MATERIALS LETTERS[J]. 2017, 196: 252-255, http://dx.doi.org/10.1016/j.matlet.2017.03.075.
[39] Lu, Guangyuan, Wu, Tianru, Yang, Peng, Yang, Yingchao, Jin, Zehua, Chen, Weibing, Jia, Shuai, Wang, Haomin, Zhang, Guanhua, Sun, Julong, Ajayan, Pulickel M, Lou, Jun, Xie, Xiaoming, Jiang, Mianheng. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy. ADVANCED SCIENCE[J]. 2017, 4(9): http://cas-ir.dicp.ac.cn/handle/321008/150181.
[40] 王浩敏, 吴天如, 贺立, 张学富, 卢光远, 陈令修. “黑金”与“白石墨”的联姻. 科技纵览[J]. 2017, 62-65, http://lib.cqvip.com/Qikan/Article/Detail?id=673364885.
[41] Wu, Tianru, Zhang, Xuefu, Yuan, Qinghong, Xue, Jiachen, Lu, Guangyuan, Liu, Zhihong, Wang, Huishan, Wang, Haomin, Ding, Feng, Yu, Qingkai, Xie, Xiaoming, Jiang, Mianheng. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys. NATURE MATERIALS[J]. 2016, 15(1): 43-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000366690600018.
[42] Yang, Chao, Wu, Tianru, Wang, Haomin, Zhang, Guanhua, Sun, Julong, Lu, Guangyuan, Niu, Tianchao, Li, Ang, Xie, Xiaoming, Jiang, Mianheng. Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy. SMALL[J]. 2016, 12(15): 2009-2013, http://cas-ir.dicp.ac.cn/handle/321008/170788.
[43] Zhang, Youwei, Li, Hui, Wang, Haomin, Xie, Hong, Liu, Ran, Zhang, ShiLi, Qiu, ZhiJun. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications. SCIENTIFIC REPORTS[J]. 2016, 6: http://dx.doi.org/10.1038/srep29615.
[44] Lu, Guangyuan, Wu, Tianru, Yuan, Qinghong, Wang, Huishan, Wang, Haomin, Ding, Feng, Xie, Xiaoming, Jiang, Mianheng. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy. NATURECOMMUNICATIONS[J]. 2015, 6: https://www.webofscience.com/wos/woscc/full-record/WOS:000348832700004.
[45] Haomin Wang. Plasmons in graphene moiré superlattices. 2015, [46] Tang, Shujie, Wang, Haomin, Wang, Hui Shan, Sun, Qiujuan, Zhang, Xiuyun, Cong, Chunxiao, Xie, Hong, Liu, Xiaoyu, Zhou, Xiaohao, Huang, Fuqiang, Chen, Xiaoshuang, Yu, Ting, Ding, Feng, Xie, Xiaoming, Jiang, Mianheng. Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride. NATURE COMMUNICATIONS[J]. 2015, 6: https://www.webofscience.com/wos/woscc/full-record/WOS:000352719700001.
[47] Zhang, Youwei, Li, Hui, Wang, Lu, Wang, Haomin, Xie, Xiaomin, Zhang, ShiLi, Liu, Ran, Qiu, ZhiJun. Photothermoelectric and photovoltaic effects both present in MoS2. SCIENTIFIC REPORTS[J]. 2015, 5: https://www.webofscience.com/wos/woscc/full-record/WOS:000348105100004.
[48] Zhang, Youwei, Li, Hui, Wang, Haomin, Liu, Ran, Zhang, ShiLi, Qiu, ZhiJun. On Valence-Band Splitting in Layered MoS2. ACS NANO[J]. 2015, 9(8): 8514-8519, http://dx.doi.org/10.1021/acsnano.5b03505.
[49] Zhang, Youwei, Qiu, Zhijun, Cheng, Xinhong, Xie, Hong, Wang, Haomin, Xie, Xiaomin, Yu, Yuehui, Liu, Ran. Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2014, 47(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000329720200009.
[50] Song, Yangxi, Zhang, Changrui, Li, Bin, Jiang, Da, Ding, Guqiao, Wang, Haomin, Xie, Xiaoming. Triggering the atomic layers control of hexagonal boron nitride films. APPLIED SURFACE SCIENCE[J]. 2014, 313: 647-653, http://dx.doi.org/10.1016/j.apsusc.2014.06.040.
[51] Song, Yangxi, Zhang, Changrui, Li, Bin, Ding, Guqiao, Jiang, Da, Wang, Haomin, Xie, Xiaoming. Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene. NANOSCALE RESEARCH LETTERS[J]. 2014, 9(1): 367-367, http://dx.doi.org/10.1186/1556-276X-9-367.
[52] Haomin Wang. Electronic transport transition at graphene/YBa2Cu3O7-δ junction junction. 2014, [53] Jiang, Da, Hu, Tao, You, Lixing, Li, Qiao, Li, Ang, Wang, Haomin, Mu, Gang, Chen, Zhiying, Zhang, Haoran, Yu, Guanghui, Zhu, Jie, Sun, Qiujuan, Lin, Chengtian, Xiao, Hong, Xie, Xiaoming, Jiang, Mianheng. High-T-c superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene. NATURE COMMUNICATIONS[J]. 2014, 5: http://dx.doi.org/10.1038/ncomms6708.
[54] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Jiang, Da, Xie, Xiaoming, Jiang, Mianheng. Triggering the Continuous Growth of Graphene Toward Millimeter-Sized Grains. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 23(2): 198-203, https://www.webofscience.com/wos/woscc/full-record/WOS:000313128700007.
[55] Yang, XC, Wang, HM, Wu, TR, Huang, FQ, Chen, J, Kang, XX, Jin, Z, Xie, XM, Jiang, MH. Magnetotransport of polycrystalline graphene: Shubnikov-de Haas oscillation and weak localization study. APPLIED PHYSICS LETTERS[J]. 2013, 102(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000320622600088.
[56] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Jiang, Da, Xie, Xiaoming, Jiang, Mianheng. Triggering the Continuous Growth of Graphene Toward Millimeter-Sized Grains. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 23(2): 198-203, https://www.webofscience.com/wos/woscc/full-record/WOS:000313128700007.
[57] Tang, Shujie, Wang, Haomin, Zhang, Yu, Li, Ang, Xie, Hong, Liu, Xiaoyu, Liu, Lianqing, Li, Tianxin, Huang, Fuqiang, Xie, Xiaoming, Jiang, Mianheng. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition. SCIENTIFIC REPORTS[J]. 2013, 3: http://www.irgrid.ac.cn/handle/1471x/720192.
[58] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Zhu, Yun, Jiang, Da, Xie, Xiaoming. Continuous graphene films synthesized at low temperatures by introducing coronene as nucleation seeds. NANOSCALE[J]. 2013, 5(12): 5456-5461, https://www.webofscience.com/wos/woscc/full-record/WOS:000319756200041.
[59] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Zhu, Yun, Jiang, Da, Xie, Xiaoming. Continuous graphene films synthesized at low temperatures by introducing coronene as nucleation seeds. NANOSCALE[J]. 2013, 5(12): 5456-5461, https://www.webofscience.com/wos/woscc/full-record/WOS:000319756200041.
[60] Chen, Jiao, Jin, Zhi, Ma, Peng, Wang, Hong, Wang, Haomin, Shi, Jingyuan, Peng, Songang, Liu, Xinyu, Ye, Tianchun. Depressed scattering across grain boundaries in single crystal graphene. APPLIED PHYSICS LETTERS[J]. 2012, 101(17): http://ir.sim.ac.cn/handle/331004/114754.
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[62] Chen, Jiao, Jin, Zhi, Ma, Peng, Wang, Hong, Wang, Haomin, Shi, Jingyuan, Peng, Songang, Liu, Xinyu, Ye, Tianchun. Depressed scattering across grain boundaries in single crystal graphene. APPLIED PHYSICS LETTERS[J]. 2012, 101(17): http://ir.sim.ac.cn/handle/331004/114754.
[63] Wang, Haomin, Wu, Yihong, Cong, Chunxiao, Shang, Jingzhi, Yu, Ting. Hysteresis of Electronic Transport in Graphene Transistors. ACS NANO[J]. 2010, 4(12): 7221-7228, https://www.webofscience.com/wos/woscc/full-record/WOS:000285449100023.
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科研活动

   
科研项目
( 1 ) 手性可控的石墨烯纳米带制备与逻辑器件探索, 负责人, 国家任务, 2018-01--2021-12
( 2 ) 六角氮化硼表面石墨烯纳米带的生长和物性研究, 负责人, 地方任务, 2016-07--2019-06
( 3 ) 晶圆级石墨烯电子材料及器件研究, 参与, 国家任务, 2011-03--2016-12
( 4 ) 石墨烯的 CVD 制备及在光电器件中的 前瞻性研究, 负责人, 中国科学院计划, 2011-12--2016-12
( 5 ) 便携式量子电阻标准关键技术研究子课题, 负责人, 国家任务, 2017-06--2021-06
( 6 ) 锯齿型石墨烯纳米带阵列制备及其自旋逻辑器件研究, 负责人, 国家任务, 2020-01--2022-12
( 7 ) 功能导向的原子制造前沿科学问题, 负责人, 中国科学院计划, 2018-06--2023-06
( 8 ) 石墨烯薄膜载流子迁移率及方块电阻测量技术研发与国际标准制定, 负责人, 地方任务, 2020-10--2023-09
( 9 ) 电子级石墨烯单晶晶圆生长和转移技术, 负责人, 国家任务, 2022-06--2025-12
参与会议
(1)石墨烯薄膜载流子迁移率及方块电阻测量方法国际标准编制   下一代电子信息材料与器件高峰论坛暨2020年第三届低维材料应用与标准研讨会LDMAS2020   2020-12-05
(2)Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2020-11-27
(3) Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2020-04-13
(4) Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment   2019-10-23
(5)Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride,   2019-10-16
(6) Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2019-10-16
(7)基于石墨烯纳米带的异质结构筑与逻辑器件探索   纪念黄昆先生诞辰100 周年暨半导体学科发展研讨会   2019-09-02
(8)六角氮化硼表面手性可控的石墨烯纳米带制备及物性研究   第二十二届全国半导体物理学术会议   2019-07-09
(9) 嵌入六角氮化硼的取向石墨烯纳米带制备   中国电子学会电子信息青年科学家论坛   2018-10-26
(10)Synthesis of Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2018-07-16
(11)Synthesis of Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2018-04-11
(12) edge control of graphene and fabrication of graphene nanoribbons on hBN   2017-10-10
(13)Multidimensional Hetero-integration of Graphene and h-BN towards Nano-electronics   2017-09-19
(14)Fabrication of Graphene Nanoribbons for Nanoelectronics and their Properties   2017-08-16
(15)Fabrication and Characterization of Graphene Nanoribbons for Nanoelectronics   2017-07-16
(16)Hetero-epitaxy of Graphene on Hexagonal Boron Nitride   2013-05-19
(17)Direct Evidence for van der Waals Hetero-epitaxy of Graphene on Hexagonal Boron Nitride   2013-03-18
(18)Sensing Molecule Moment on Graphene Surface by Examing the Electronic Transport Hysteresis   2011-06-26

指导学生

已指导学生

王秀君  博士研究生  080903-微电子学与固体电子学  

王慧山  博士研究生  080903-微电子学与固体电子学  

现指导学生

陈晨  博士研究生  080903-微电子学与固体电子学  

王祎博  硕士研究生  085400-电子信息  

孔自强  博士研究生  080903-微电子学与固体电子学  

冯钰涵  硕士研究生  085400-电子信息