2004年以来，瞄准石墨烯研究的国际前沿，围绕石墨烯在微电子应用面临的主要科学问题进行持续创新，探索其微电子学应用的发展方向及技术路线，拓展其在集成电路、计量等领域的应用，在石墨烯纳米带制备及其器件方面形成特色鲜明的系统研究。在Nat. Mater.,Nat.Rev.Phys., Nat. Comm.等刊物上发表论文53余篇，总它引6100次。授权国内专利29件，国际专利6件。嵌入氮化硼的石墨烯纳米带相关成果曾被Nature Nanotech.杂志做亮点报道。作为负责人和项目骨干承担国家重大专项、国家自然科学基金、中科院重点部署项目、中科院战略性先导专项项目课题、国家重点研发计划项目和上海市科委项目等多项科研项目。

   

080903-微电子学与固体电子学

新型信息功能材料与器件
新型功能材料器件与集成电路
新型功能器件与系统集成

2004-08--2008-09   新加坡国立大学   工学博士（电气与电脑工程）
1999-09--2002-07   华中科技大学   工学硕士（微电子学与固体电子学）
1995-09--1999-06   华中理工大学   工学学士（电子材料与元器件）

   

2011-10~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2009-05~2011-10,新加坡南洋理工大学, 博士后
2008-09~2009-05,新加坡国立大学, 博士后
2002-07~2004-08,上海信息安全基础设施研究中心, 高级工程师

2022-06-27-2025-06-27,ERC Consolidator 2022, remote referee
2021-05-31-2026-05-30,IEC expert, international referee

   

（1） 高质量石墨烯电子材料制备研究, 一等奖, 省级, 2019

（ 1 ） 小型量子电阻标准器, 发明专利, 2022, 第 1 作者, 专利号: CN114200373A

（ 2 ） 六方氮化硼表面扭转双层石墨烯及其制备方法, 发明专利, 2022, 第 1 作者, 专利号: CN113979429A

（ 3 ） 一种高性能相变存储器及其制备方法, 发明专利, 2021, 第 3 作者, 专利号: 202111106532.X

（ 4 ） 一种铜基织构薄膜衬底上制备石墨烯单晶晶圆的方法, 发明专利, 2020, 第 3 作者, 专利号: CN111705359A

（ 5 ） 一种铜基织构薄膜衬底上制备石墨烯单晶晶圆的方法, 发明专利, 2022, 第 3 作者, 专利号: 202010620665.8

（ 6 ） 一种面内呈60°夹角的镍铜（111）孪晶薄膜及其制备方法, 发明专利, 2021, 第 3 作者, 专利号: CN112837993A

（ 7 ） 多层六方氮化硼薄膜的制备方法, 发明专利, 2022, 第 6 作者, 专利号: 特许第7083406号

（ 8 ） 多层六方氮化硼薄膜的制备方法, 发明专利, 2020, 第 6 作者, 专利号: CN110921637A

（ 9 ） 一种低温制备石墨烯单晶晶圆的方法, 专利授权, 2019, 第 2 作者, 专利号: CN109205599A

（ 10 ） 一种镍铜（111）合金单晶薄膜的制备方法以及由此得到的镍铜（111）合金单晶薄膜, 发明专利, 2018, 第 2 作者, 专利号: CN108754608A

（ 11 ） 一种石墨烯‑硒化铌超导异质结器件及其制备方法, 专利授权, 2018, 第 1 作者, 专利号: CN107634089A

（ 12 ） 石墨烯边界调控方法, 专利授权, 2017, 第 1 作者, 专利号: CN107500277A

（ 13 ） 一种新型量子霍尔器件及其制备方法, 发明专利, 2016, 第 1 作者, 专利号: CN106025061A

（ 14 ） 一种转移石墨烯的方法, 发明专利, 2016, 第 3 作者, 专利号: CN106185900A

（ 15 ） 一种量子干涉器件结构及其制备方法, 发明专利, 2016, 第 1 作者, 专利号: CN106058036A

（ 16 ） 一种用于磁场屏蔽的半导体器件及其制作方法, 发明专利, 2016, 第 1 作者, 专利号: CN106024760A

（ 17 ） 一种金属蒸气辅助快速生长少层石墨烯的制备方法, 发明专利, 2016, 第 5 作者, 专利号: CN105779964A

（ 18 ） 一种高灵敏度石墨烯磁场传感器及其制备方法, 发明专利, 2016, 第 1 作者, 专利号: CN105405965A

（ 19 ） 一种以石墨烯作为接触电极的器件结构及其制备方法, 发明专利, 2015, 第 1 作者, 专利号: CN105070347A

（ 20 ） 一种基于石墨烯场效应管微区加热的原位生长材料的方法, 发明专利, 2015, 第 1 作者, 专利号: CN104894639A

（ 21 ） 一种氮化硼衬底表面台阶刻蚀方法, 发明专利, 2015, 第 1 作者, 专利号: CN104992905A

（ 22 ） 一种石墨烯-氮化硼异质结的制备方法, 发明专利, 2015, 第 6 作者, 专利号: CN104944417A

（ 23 ） 局域供碳装置及局域供碳制备晶圆级石墨烯单晶的方法, 发明专利, 2015, 第 5 作者, 专利号: CN104928649A

（ 24 ） h-BN上石墨烯纳米带的制备方法, 发明专利, 2015, 第 1 作者, 专利号: CN104726845A

（ 25 ） 一种石墨烯闪存存储器的制备方法, 发明专利, 2014, 第 1 作者, 专利号: CN104192835A

（ 26 ） 一种降低石墨烯与电极接触电阻的方法, 发明专利, 2014, 第 1 作者, 专利号: CN103943512A

（ 27 ） 一种柔性衬底上制备石墨烯器件的方法, 发明专利, 2014, 第 1 作者, 专利号: CN103943513A

（ 28 ） 一种基于石墨烯场效应管的微区加热方法及结构, 发明专利, 2014, 第 2 作者, 专利号: CN103839835A

（ 29 ） 一种制备六方氮化硼薄膜的方法, 发明专利, 2014, 第 4 作者, 专利号: CN103774113A

（ 30 ） 一种基于石墨烯的芯片散热材料的制备方法, 发明专利, 2014, 第 1 作者, 专利号: CN103779292A

（ 31 ） 石墨烯器件的制作方法, 发明专利, 2014, 第 1 作者, 专利号: CN103646855A

（ 32 ） 石墨烯场效应管的制作方法, 发明专利, 2014, 第 1 作者, 专利号: CN103531482A

（ 33 ） 一种基于竖直石墨烯的散热材料的制备方法, 发明专利, 2014, 第 1 作者, 专利号: CN103553029A

（ 34 ） 石墨烯的生长方法, 发明专利, 2015, 第 1 作者, 专利号: CN104562195A

（ 35 ） 基于石墨烯的隧穿场效应管单元、阵列及其形成方法, 发明专利, 2013, 第 1 作者, 专利号: CN103400859A

（ 36 ） 一种基于竖直石墨烯的场发射电极的图形化制备方法, 发明专利, 2013, 第 1 作者, 专利号: CN103280404A

（ 37 ） 薄膜图形化方法, 发明专利, 2013, 第 2 作者, 专利号: CN103151245A

（ 38 ） 一种绝缘衬底上的电子束曝光图形化方法, 发明专利, 2013, 第 2 作者, 专利号: CN103176354A

（ 39 ） 一种基于栅介质结构的石墨烯场效应器件及其制备方法, 发明专利, 2013, 第 1 作者, 专利号: CN102931057A

（ 40 ） 一种石墨烯场效应器件制备方法, 发明专利, 2013, 第 1 作者, 专利号: CN102915929A

（ 41 ） 一种于石墨烯表面制备高k栅介质薄膜的方法, 发明专利, 2013, 第 1 作者, 专利号: CN102856185A

（ 42 ） 一种于多层石墨烯表面制备高k栅介质的方法, 发明专利, 2013, 第 1 作者, 专利号: CN102856184A

   

[1] Nano Letters. 2024, 第 8 作者  通讯作者  
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[3] Tian, Chuang, Xiao, Runhan, Sui, Yanping, Feng, Yuhan, Wang, Haomin, Zhao, Sunwen, Liu, Jiawen, Gao, Xiuli, Wang, Shuang, Yu, Guanghui. The controllable synthesis of bilayer V doped WS 2 based on liquid precursor assisted CVD. MATERIALS LETTERS[J]. 2023, 第 5 作者353: http://dx.doi.org/10.1016/j.matlet.2023.135292.
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[5] Wang, Shuang, Ding, Degong, Li, Pai, Sui, Yanping, Liu, Guanyu, Zhao, Sunwen, Xiao, Runhan, Tian, Chuang, Chen, Zhiying, Wang, Haomin, Chen, Chen, Mu, Gang, Liu, Yixin, Zhang, Yanhui, Jin, Chuanhong, Ding, Feng, Yu, Guanghui. Concentration Phase Separation of Substitution-Doped Atoms in TMDCs Monolayer. SMALL[J]. 2023, 第 10 作者19(32): http://dx.doi.org/10.1002/smll.202301027.
[6] Advanced Materials. 2023, 第 15 作者  通讯作者  
[7] Chen, Lingxiu, Wang, HuiShan, Kong, Ziqiang, Zhai, Changwei, Wang, Xiujun, Wang, Yibo, Liu, Zhengtai, Jiang, Chengxin, Chen, Chen, Shen, Dawei, Chen, Xipin, Zhu, Yuxuan, Bao, Wenzhong, Yang, Zhenyu, Lu, Yunfeng, Wang, Haomin. Gaseous Catalyst Assisted Growth of Graphene on Silicon Carbide for Quantum Hall Resistance Standard Device. ADVANCED MATERIALS TECHNOLOGIES[J]. 2023, 第 16 作者  通讯作者  8(2): http://dx.doi.org/10.1002/admt.202201127.
[8] Yibo Wang, Huishan Wang, Chengxin Jiang, Xipin Chen, Chen Chen, Ziqiang Kong, Haomin Wang. Plasma assisted approaches toward high quality transferred synthetic graphene for electronics. NANO EXPRESS[J]. 2023, 第 7 作者  通讯作者  4(1): https://doaj.org/article/258f6ef768e340d797321f4f915e9ace.
[9] Jiang, Chengxin, Chen, Lingxiu, Wang, Huishan, Chen, Chen, Wang, Xiujun, Kong, Ziqiang, Wang, Yibo, Wang, Haomin, Xie, Xiaoming. Increasing coverage of mono-layer graphene grown on hexagonal boron nitride. NANOTECHNOLOGY[J]. 2023, 第 8 作者  通讯作者  34(16): http://dx.doi.org/10.1088/1361-6528/acb4f5.
[10] Ge, Yang, Chen, Lingxiu, Jiang, Chengxin, Ji, Jianlong, Tan, Qiuyun, Pan, Douxing, Zhang, Wendong, Zhang, Riguang, Janzen, Eli, Edgar, James H, Sang, Shengbo, Wang, Haomin. Edge magnetism of triangular graphene nanoflakes embedded in hexagonal boron nitride. CARBON[J]. 2023, 第 12 作者  通讯作者  203: 59-67, http://dx.doi.org/10.1016/j.carbon.2022.11.034.
[11] Liang, Chenhui, Sha, Yating, Huang, Jingxian, Zhang, Chao, Su, Shubin, Li, Hao, Wang, Guohua, Liu, Kaihui, Wang, Fei, Wang, Haomin, Luo, Weidong, Chen, Guorui, Wu, Tianru, Xie, Xiaoming, Qian, Dong, Tao, Haihua. Oxidizing Hexagonal Boron Nitride into Fluorescent Structures byPhotodissociated Directional Oxygen Radical br. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2022, 第 10 作者13(15): 3369-3376, http://dx.doi.org/10.1021/acs.jpclett.2c00284.
[12] Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie. Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact. ADVANCED SCIENCE[J]. 2022, 第 3 作者  通讯作者  9(25): n/a-n/a, https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9443440/.
[13] Zhang, Shuai, Yao, Quanzhou, Chen, Lingxiu, Jiang, Chengxin, Ma, Tianbao, Wang, Haomin, Feng, XiQiao, Li, Qunyang. Dual-Scale Stick-Slip Friction on Graphene/h-BN Moire Superlattice Structure. PHYSICAL REVIEW LETTERS[J]. 2022, 第 6 作者  通讯作者  128(22): http://dx.doi.org/10.1103/PhysRevLett.128.226101.
[14] Chen, Chen, He, Li, Jiang, Chengxin, Chen, Lingxiu, Wang, Hui Shan, Wang, Xiujun, Kong, Ziqiang, Mu, Xiaojing, Wei, Zhipeng, Watanabe, Kenji, Taniguchi, Takashi, Wu, Tianru, Zhang, Daoli, Wang, Haomin. Directional etching for high aspect ratio nano-trenches on hexagonal boron nitride by catalytic metal particles. 2D MATERIALS[J]. 2022, 第 14 作者  通讯作者  9(2): http://dx.doi.org/10.1088/2053-1583/ac5461.
[15] Liang, Chenhui, Sha, Yating, Huang, Jingxian, Zhang, Chao, Su, Shubin, Li, Hao, Wang, Guohua, Liu, Kaihui, Wang, Fei, Wang, Haomin, Luo, Weidong, Chen, Guorui, Wu, Tianru, Xie, Xiaoming, Qian, Dong, Tao, Haihua. Oxidizing Hexagonal Boron Nitride into Fluorescent Structures byPhotodissociated Directional Oxygen Radical. JOURNAL OF PHYSICAL CHEMISTRY LETTERS[J]. 2022, 第 10 作者13(15): 3369-3376, http://dx.doi.org/10.1021/acs.jpclett.2c00284.
[16] Wang, Shuang, Chen, Yan, Tan, Tianhao, Sui, Yanping, Tian, Chuang, Kong, Ziqiang, Wang, Haomin, Zhao, Sunwen, Xiao, Runhan, Chen, Zhiying, Zhang, Yanhui, Wang, Dong, Wang, Jianlu, Yu, Guanghui. One-Step Synthesis of a Bilayer MoS2/WS2 Lateral Heterojunction for Photoelectric Detection. ACS APPLIED NANO MATERIALS[J]. 2022, 第 7 作者5(11): 17203-17211, http://dx.doi.org/10.1021/acsanm.2c04189.
[17] Huang, Xiong, Chen, Lingxiu, Tang, Shujie, Jiang, Chengxin, Chen, Chen, Wang, Huishan, Shen, ZhiXun, Wang, Haomin, Cui, YongTao. Imaging Dual-Moire Lattices in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride Using Microwave Impedance Microscopy. NANO LETTERS[J]. 2021, 第 8 作者21(10): 4292-4298, http://dx.doi.org/10.1021/acs.nanolett.1c00601.
[18] Chen, Lingxiu, Elibol, Kenan, Cai, Haifang, Jiang, Chengxin, Shi, Wenhao, Chen, Chen, Wang, Hui Shan, Wang, Xiujun, Mu, Xiaojing, Li, Chen, Watanabe, Kenji, Taniguchi, Takashi, Guo, Yufeng, Meyer, Jannik C, Wang, Haomin. Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride. 2D MATERIALS[J]. 2021, 第 15 作者8(2): http://dx.doi.org/10.1088/2053-1583/abd41e.
[19] Jiang ChengXin, Chen LingXiu, Wang HuiShan, Wang XiuJun, Chen Chen, Wang HaoMin, Xie XiaoMing. Synthesis and pressure study of bubbles in hexagonal boron nitride interlayer. ACTA PHYSICA SINICA[J]. 2021, 第 6 作者  通讯作者  70(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000631862800036.
[20] Wang, Hui Shan, Chen, Lingxiu, Elibol, Kenan, He, Li, Wang, Haomin, Chen, Chen, Jiang, Chengxin, Li, Chen, Wu, Tianru, Cong, Chun Xiao, Pennycook, Timothy J, Argentero, Giacomo, Zhang, Daoli, Watanabe, Kenji, Taniguchi, Takashi, Wei, Wenya, Yuan, Qinghong, Meyer, Jannik C, Xie, Xiaoming. Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride. NATURE MATERIALS[J]. 2021, 第 5 作者  通讯作者  20(2): 202-+, http://dx.doi.org/10.1038/s41563-020-00806-2.
[21] Wang, Haomin, Wang, Hui Shan, Ma, Chuanxu, Chen, Lingxiu, Jiang, Chengxin, Chen, Chen, Xie, Xiaoming, Li, AnPing, Wang, Xinran. Graphene nanoribbons for quantum electronics. NATURE REVIEWS PHYSICS. 2021, 第 1 作者  通讯作者  3(12): 791-802, http://dx.doi.org/10.1038/s42254-021-00370-x.
[22] 姜程鑫, 陈令修, 王慧山, 王秀君, 陈晨, 王浩敏, 谢晓明. 六方氮化硼层间气泡制备与压强研究. 物理学报[J]. 2021, 第 6 作者70(6): 122-128, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.70.20201482.
[23] Zhang, Shuai, Song, Aisheng, Chen, Lingxiu, Jiang, Chengxin, Chen, Chen, Gao, Lei, Hou, Yuan, Liu, Luqi, Ma, Tianbao, Wang, Haomin, Feng, XiQiao, Li, Qunyang. Abnormal conductivity in low-angle twisted bilayer graphene. SCIENCE ADVANCES[J]. 2020, 第 10 作者  通讯作者  6(47): https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7679157/.
[24] Yang, Peng, Shan, Yabing, Chen, Jing, Ekoya, Garel, Han, Jinkun, Qiu, ZhiJun, Sun, Junjie, Chen, Fei, Wang, Haomin, Bao, Wenzhong, Hu, Laigui, Zhang, RongJun, Liu, Ran, Cong, Chunxiao. Remarkable quality improvement of as-grown monolayer MoS2 by sulfur vapor pretreatment of SiO2/Si substrates. NANOSCALE[J]. 2020, 第 9 作者12(3): 1958-1966, https://www.webofscience.com/wos/woscc/full-record/WOS:000509545700067.
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[26] Zhiyuan Shi, Xiujun Wang, Qingtian Li, Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu, Haomin Wang, Qingkai Yu, Xiaoming Xie. Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates. NATURE COMMUNICATIONS[J]. 2020, 第 12 作者  通讯作者  11(1): 1-8, 
[27] Ren, Xibiao, Dong, Jichen, Yang, Peng, Li, Jidong, Lu, Guangyuan, Wu, Tianru, Wang, Haomin, Guo, Wanlin, Zhang, Ze, Ding, Feng, Jin, Chuanhong. Grain boundaries in chemical-vapor-deposited atomically thin hexagonal boron nitride. PHYSICAL REVIEW MATERIALS[J]. 2019, 第 7 作者3(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000456298300002.
[28] Chen LingXiu, Wang HuiShan, Jiang ChengXin, Chen Chen, Wang HaoMin. Synthesis and characterization of graphene nanoribbons on hexagonal boron nitride. ACTA PHYSICA SINICA[J]. 2019, 第 5 作者  通讯作者  68(16): https://www.webofscience.com/wos/woscc/full-record/WOS:000483384000032.
[29] Ni G X, Wang H, Jiang BY, Chen L X, Du Y, Sun Z Y, Goldflam M D, Frenzel A J, Xie X M, Fogler M M, Basov D N. Soliton superlattices in twisted hexagonal boron nitride. Nature Communications[J]. 2019, 10(1): 1-6, https://www.nature.com/articles/s41467-019-12327-x.
[30] He, Li, Wang, Huishan, Chen, Lingxiu, Wang, Xiujun, Xie, Hong, Jiang, Chengxin, Li, Chen, Elibol, Kenan, Meyer, Jannik, Watanabe, Kenji, Taniguchi, Takashi, Wu, Zhangting, Wang, Wenhui, Ni, Zhenhua, Miao, Xiangshui, Zhang, Chi, Zhang, Daoli, Wang, Haomin, Xie, Xiaoming. Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment. NATURE COMMUNICATIONS[J]. 2019, 第 18 作者  通讯作者  10(1): http://dx.doi.org/10.1038/s41467-019-10660-9.
[31] 陈令修, 王慧山, 姜程鑫, 陈晨, 王浩敏. 六方氮化硼表面石墨烯纳米带生长与物性研究. 物理学报[J]. 2019, 第 5 作者68(16): 303-315, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.68.20191036.
[32] Lu, Guangyuan, Zhang, Guanhua, Sun, Julong, Wang, Xiujun, Shi, Zhiyuan, Jiang, Da, Wang, Haomin, Li, Ang, Wu, Tianru, Yu, Qingkai, Xie, Xiaoming. Synthesis and stacking sequence characterization of h-BN/graphene heterostructures on Cu-Ni alloy. CARBON[J]. 2019, 第 7 作者152: 521-526, http://dx.doi.org/10.1016/j.carbon.2019.06.040.
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[34] Yang Peng, Yang Aiguo, Chen Lingxiu, Chen Jing, Zhang Youwei, Wang Haomin, Hu Laigui, Zhang Rongjun, Liu Ran, Qu Xinping, Qiu Zhijun, Cong Chunxiao. Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide. NANO RESEARCH[J]. 2019, 第 6 作者12(4): 823-827, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=6455362&detailType=1.
[35] Cong, Chunxiao, Zou, Chenji, Cao, Bingchen, Wu, Lishu, Shang, Jingzhi, Wang, Haomin, Qiu, Zhijun, Hu, Laigui, Tian, Pengfei, Liu, Ran, Yu, Ting. Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride. NANO RESEARCH[J]. 2018, 第 6 作者11(12): 6227-6236, http://dx.doi.org/10.1007/s12274-018-2142-5.
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[42] 杨超, 吴天如, 王浩敏, 谢晓明. 绝缘衬底上石墨烯的化学气相沉积制备与器件应用. 科学通报[J]. 2017, 第 3 作者62(20): 2168-2179, https://www.sciengine.com/doi/10.1360/N972017-00006.
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[44] Yang, Chao, Wu, Tianru, Wang, Haomin, Zhang, Xuefu, Shi, Zhiyuan, Xie, Xiaoming. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates. APPLIED PHYSICS LETTERS[J]. 2017, 第 3 作者111(4): https://www.webofscience.com/wos/woscc/full-record/WOS:000406779700041.
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[47] Lu, Guangyuan, Wu, Tianru, Yang, Peng, Yang, Yingchao, Jin, Zehua, Chen, Weibing, Jia, Shuai, Wang, Haomin, Zhang, Guanhua, Sun, Julong, Ajayan, Pulickel M, Lou, Jun, Xie, Xiaoming, Jiang, Mianheng. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy. ADVANCED SCIENCE[J]. 2017, 第 8 作者4(9): http://cas-ir.dicp.ac.cn/handle/321008/150181.
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[49] Wu, Tianru, Zhang, Xuefu, Yuan, Qinghong, Xue, Jiachen, Lu, Guangyuan, Liu, Zhihong, Wang, Huishan, Wang, Haomin, Ding, Feng, Yu, Qingkai, Xie, Xiaoming, Jiang, Mianheng. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys. NATURE MATERIALS[J]. 2016, 第 8 作者15(1): 43-+, https://www.webofscience.com/wos/woscc/full-record/WOS:000366690600018.
[50] Zhang, Youwei, Li, Hui, Wang, Haomin, Xie, Hong, Liu, Ran, Zhang, ShiLi, Qiu, ZhiJun. Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications. SCIENTIFIC REPORTS[J]. 2016, 第 3 作者6: http://dx.doi.org/10.1038/srep29615.
[51] Lu, Guangyuan, Wu, Tianru, Yuan, Qinghong, Wang, Huishan, Wang, Haomin, Ding, Feng, Xie, Xiaoming, Jiang, Mianheng. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy. NATURECOMMUNICATIONS[J]. 2015, 第 5 作者6: https://www.webofscience.com/wos/woscc/full-record/WOS:000348832700004.
[52] Haomin Wang. Plasmons in graphene moiré superlattices. 2015, 第 1 作者
[53] Tang, Shujie, Wang, Haomin, Wang, Hui Shan, Sun, Qiujuan, Zhang, Xiuyun, Cong, Chunxiao, Xie, Hong, Liu, Xiaoyu, Zhou, Xiaohao, Huang, Fuqiang, Chen, Xiaoshuang, Yu, Ting, Ding, Feng, Xie, Xiaoming, Jiang, Mianheng. Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride. NATURE COMMUNICATIONS[J]. 2015, 第 2 作者  通讯作者  6: https://www.webofscience.com/wos/woscc/full-record/WOS:000352719700001.
[54] Zhang, Youwei, Li, Hui, Wang, Lu, Wang, Haomin, Xie, Xiaomin, Zhang, ShiLi, Liu, Ran, Qiu, ZhiJun. Photothermoelectric and photovoltaic effects both present in MoS2. SCIENTIFIC REPORTS[J]. 2015, 第 4 作者5: https://www.webofscience.com/wos/woscc/full-record/WOS:000348105100004.
[55] Zhang, Youwei, Li, Hui, Wang, Haomin, Liu, Ran, Zhang, ShiLi, Qiu, ZhiJun. On Valence-Band Splitting in Layered MoS2. ACS NANO[J]. 2015, 第 3 作者9(8): 8514-8519, http://dx.doi.org/10.1021/acsnano.5b03505.
[56] Zhang, Youwei, Qiu, Zhijun, Cheng, Xinhong, Xie, Hong, Wang, Haomin, Xie, Xiaomin, Yu, Yuehui, Liu, Ran. Direct growth of high-quality Al2O3 dielectric on graphene layers by low-temperature H2O-based ALD. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2014, 第 5 作者47(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000329720200009.
[57] Song, Yangxi, Zhang, Changrui, Li, Bin, Jiang, Da, Ding, Guqiao, Wang, Haomin, Xie, Xiaoming. Triggering the atomic layers control of hexagonal boron nitride films. APPLIED SURFACE SCIENCE[J]. 2014, 第 6 作者313: 647-653, http://dx.doi.org/10.1016/j.apsusc.2014.06.040.
[58] Song, Yangxi, Zhang, Changrui, Li, Bin, Ding, Guqiao, Jiang, Da, Wang, Haomin, Xie, Xiaoming. Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene. NANOSCALE RESEARCH LETTERS[J]. 2014, 第 6 作者9(1): 367-367, http://dx.doi.org/10.1186/1556-276X-9-367.
[59] Haomin Wang. Electronic transport transition at graphene/YBa2Cu3O7-δ junction junction. 2014, 第 1 作者  通讯作者  
[60] Jiang Da, Hu Tao, You Lixing, Li Qiao, Li Ang, Wang Haomin, Mu Gang, Chen Zhiying, Zhang Haoran, Yu Guanghui, Zhu Jie, Sun Qiujuan, Lin Chengtian, Xiao Hong, Xie Xiaoming, Jiang Mianheng. High-Tc superconductivity in ultrathin Bi2Sr2CaCu2O8+x down to half-unit-cell thickness by protection with graphene. Nature Communications[J]. 2014, 第 6 作者5(1): 1-6, https://www.nature.com/articles/ncomms6708.
[61] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Jiang, Da, Xie, Xiaoming, Jiang, Mianheng. Triggering the Continuous Growth of Graphene Toward Millimeter-Sized Grains. ADVANCED FUNCTIONAL MATERIALS[J]. 2013, 第 4 作者23(2): 198-203, https://www.webofscience.com/wos/woscc/full-record/WOS:000313128700007.
[62] Yang, XC, Wang, HM, Wu, TR, Huang, FQ, Chen, J, Kang, XX, Jin, Z, Xie, XM, Jiang, MH. Magnetotransport of polycrystalline graphene: Shubnikov-de Haas oscillation and weak localization study. APPLIED PHYSICS LETTERS[J]. 2013, 102(23): https://www.webofscience.com/wos/woscc/full-record/WOS:000320622600088.
[63] Tang, Shujie, Wang, Haomin, Zhang, Yu, Li, Ang, Xie, Hong, Liu, Xiaoyu, Liu, Lianqing, Li, Tianxin, Huang, Fuqiang, Xie, Xiaoming, Jiang, Mianheng. Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition. SCIENTIFIC REPORTS[J]. 2013, 第 2 作者  通讯作者  3: http://dx.doi.org/10.1038/srep02666.
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[65] Wu, Tianru, Ding, Guqiao, Shen, Honglie, Wang, Haomin, Sun, Lei, Zhu, Yun, Jiang, Da, Xie, Xiaoming. Continuous graphene films synthesized at low temperatures by introducing coronene as nucleation seeds. NANOSCALE[J]. 2013, 第 4 作者5(12): 5456-5461, https://www.webofscience.com/wos/woscc/full-record/WOS:000319756200041.
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（ 1 ） 基于石墨烯的低工作磁场量子霍尔电阻标准器件研制, 负责人, 国家任务, 2025-01--2028-12
（ 2 ） 纳米尺度晶体管沟道材料热管理技术集成及高性能器件构筑, 参与, 国家任务, 2024-12--2028-11
（ 3 ） 电子级石墨烯单晶晶圆生长和转移技术, 负责人, 国家任务, 2022-06--2025-12
（ 4 ） 石墨烯薄膜载流子迁移率及方块电阻测量技术研发与国际标准制定, 负责人, 地方任务, 2020-10--2023-09
（ 5 ） 锯齿型石墨烯纳米带阵列制备及其自旋逻辑器件研究, 负责人, 国家任务, 2020-01--2022-12
（ 6 ） 功能导向的原子制造前沿科学问题, 负责人, 中国科学院计划, 2018-06--2023-06
（ 7 ） 手性可控的石墨烯纳米带制备与逻辑器件探索, 负责人, 国家任务, 2018-01--2021-12
（ 8 ） 便携式量子电阻标准关键技术研究子课题, 负责人, 国家任务, 2017-06--2021-06
（ 9 ） 六角氮化硼表面石墨烯纳米带的生长和物性研究, 负责人, 地方任务, 2016-07--2019-06
（ 10 ） 石墨烯的 CVD 制备及在光电器件中的 前瞻性研究, 负责人, 中国科学院计划, 2011-12--2016-12
（ 11 ） 晶圆级石墨烯电子材料及器件研究, 参与, 国家任务, 2011-03--2016-12

（1）Fabrication of zGNR embedded in h-BN and its transport signatures of ferromagnetism   2022-06-20
（2）石墨烯薄膜载流子迁移率及方块电阻测量方法国际标准编制   下一代电子信息材料与器件高峰论坛暨2020年第三届低维材料应用与标准研讨会LDMAS2020   2020-12-05
（3）Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2020-11-27
（4） Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2020-04-13
（5） Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment   2019-10-23
（6）Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride,   2019-10-16
（7） Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2019-10-16
（8）基于石墨烯纳米带的异质结构筑与逻辑器件探索   纪念黄昆先生诞辰100 周年暨半导体学科发展研讨会   2019-09-02
（9）六角氮化硼表面手性可控的石墨烯纳米带制备及物性研究   第二十二届全国半导体物理学术会议   2019-07-09
（10） 嵌入六角氮化硼的取向石墨烯纳米带制备   中国电子学会电子信息青年科学家论坛   2018-10-26
（11）Synthesis of Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2018-07-16
（12）Synthesis of Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride   2018-04-11
（13） edge control of graphene and fabrication of graphene nanoribbons on hBN   2017-10-10
（14）Multidimensional Hetero-integration of Graphene and h-BN towards Nano-electronics   2017-09-19
（15）Fabrication of Graphene Nanoribbons for Nanoelectronics and their Properties   2017-08-16
（16）Fabrication and Characterization of Graphene Nanoribbons for Nanoelectronics   2017-07-16
（17）Hetero-epitaxy of Graphene on Hexagonal Boron Nitride   2013-05-19
（18）Direct Evidence for van der Waals Hetero-epitaxy of Graphene on Hexagonal Boron Nitride   2013-03-18
（19）Sensing Molecule Moment on Graphene Surface by Examing the Electronic Transport Hysteresis   2011-06-26

已指导学生

王秀君  博士研究生  080903-微电子学与固体电子学  

王慧山  博士研究生  080903-微电子学与固体电子学  

陈晨  博士研究生  080903-微电子学与固体电子学  

王祎博  硕士研究生  085400-电子信息  

冯钰涵  硕士研究生  085400-电子信息  

现指导学生

孔自强  博士研究生  080903-微电子学与固体电子学  

宋俊驰  博士研究生  080903-微电子学与固体电子学  

田闯  博士研究生  080903-微电子学与固体电子学  

冯宇  博士研究生  080903-微电子学与固体电子学  

章子曾  硕士研究生  085400-电子信息