080903-微电子学与固体电子学
080300-光学工程
085400-电子信息

集成电路先导工艺技术
光学模型
计算光刻

2008-09--2014-07   北京理工大学   博士研究生
2004-09--2008-07   合肥工业大学   学士学位

   

2017-07~现在, 中国科学院微电子研究所, 副研究员
2014-09~2017-07,中国科学院微电子研究所, 助理研究员

集成电路先进光刻与版图设计优化
超大规模集成电路先进光刻理论与应用

   

[1] 李梓棋, 韦亚一, 董立松. 一种获取衍射近场分布的方法. CN: CN114092490A, 2022-02-25.

[2] 何建芳, 韦亚一, 粟雅娟, 董立松, 张利斌, 陈睿, 马乐. 一种掩模参数优化方法及装置. CN: CN114137792A, 2022-03-04.

[3] 景旭宇, 韦亚一, 董立松. 一种极紫外光掩模衍射近场计算模型的建立方法、装置及电子设备. CN: CN114021435A, 2022-02-08.

[4] 马玲, 韦亚一, 董立松, 苏晓菁. 一种光刻工艺禁止周期确定方法及装置. CN: CN113064328A, 2021-07-02.

[5] 董鹏. 晶圆清洗装置及晶圆清洗方法. CN: CN113690127A, 2021-11-23.

[6] 吴睿轩, 韦亚一, 董立松. 一种掩模版缺陷修复方法及装置. CN: CN111399335A, 2020-07-10.

[7] 郝芸芸, 韦亚一, 董立松, 陈睿. 用于制造显示面板的新型掩模版及其制备方法. CN: CN111258171A, 2020-06-09.

[8] 郝芸芸, 韦亚一, 董立松, 陈睿. 用于制造显示面板的新型掩模版及其参数确定方法. CN: CN111258172A, 2020-06-09.

[9] 马恩泽, 韦亚一, 张利斌, 董立松. 一种获取套刻误差量测数据的方法及装置. CN: CN111123662A, 2020-05-08.

[10] 陈颖, 韦亚一, 董立松, 陈睿, 吴睿轩, 粟雅娟. 一种光刻掩膜板缺陷检测方法及设备和芯片. CN: CN111257325A, 2020-06-09.

[11] 何建芳, 韦亚一, 董立松, 张利斌, 陈睿, 张双. 提高版图光刻性能的方法、修正后的版图及仿真方法. CN: CN110989289A, 2020-04-10.

[12] 何建芳, 韦亚一, 粟雅娟, 董立松, 张利斌, 苏晓菁, 陈睿, 马玲. 一种确定光刻工艺节点禁止周期的方法及仿真方法. CN: CN111025856B, 2021-08-13.

[13] 马恩泽, 韦亚一, 董立松. 一种套刻误差的补偿方法及装置. CN: CN110941150A, 2020-03-31.

[14] 陈睿, 韦亚一, 唐明浩, 张利斌, 马乐, 粟雅娟, 董立松, 何建芳, 王文武. 一种基板及其制备方法. CN: CN110752180B, 2022-03-08.

[15] 刘琦, 韦亚一, 董立松. 一种NAND Flash时序测试方法. CN: CN110797076B, 2021-09-14.

[16] 刘琦, 韦亚一, 董立松. 一种NAND Flash存储器读阈值电压修复方法. CN: CN110706735B, 2021-09-14.

[17] 何建芳, 韦亚一, 董立松, 赵利俊. 一种掩模参数的优化方法及装置. CN: CN108919601A, 2018-11-30.

[18] 徐步青, 韦亚一, 马玲, 董立松. 基于衍射的套刻误差测量中测量波长的选择方法. CN: CN108897196A, 2018-11-27.

[19] 吴元芳, 韦亚一, 董立松. 测振装置. CN: CN108871545A, 2018-11-23.

[20] 马玲",null,null,"董立松. 晶圆清洗装置及晶圆清洗方法. CN: CN108649006A, 2018-10-12.

[21] 左晔华, 韦亚一, 刘艳松, 董立松. 添加亚分辨率辅助图形的方法及该方法的应用. CN: CN108828896A, 2018-11-16.

[22] 赵利俊, 韦亚一, 董立松, 张利斌. 测试图形的选取方法和装置、构建光刻模型的方法和装置. CN: CN108153995A, 2018-06-12.

[23] 韦亚一, 宋之洋, 郭沫然, 颜永利, 董立松, 苏晓菁, 刘实. 一种基于版图几何特征匹配的光刻解决方案预测方法. CN: CN106773541A, 2017-05-31.

[24] 董立松, 宋之洋, 韦亚一. 一种掩膜图形的优化方法、最佳焦平面位置测量方法及系统. CN: CN105785724A, 2016-07-20.

[25] 张利斌, 董立松, 苏晓菁, 韦亚一. 五级衍射光栅结构及其制备方法、晶圆光刻对准方法. CN: CN105607435A, 2016-05-25.

[26] 张利斌, 董立松, 苏晓菁, 韦亚一. 七级衍射光栅结构及其制备方法、晶圆光刻对准方法. CN: CN105549138A, 2016-05-04.

[27] 宋之洋, 郭沫然, 韦亚一, 董立松, 于丽贤. 光源掩模协同优化方法. CN: CN105425532A, 2016-03-23.

[28] 董立松, 韦亚一, 宋之洋. 一种焦面位置测试掩膜版及确定焦面位置的方法. CN: CN106707684B, 2019-12-13.

[29] 董立松, 韦亚一, 宋之洋. 一种焦面位置测试掩膜版及确定焦面位置的方法及装置. CN: CN106707684A, 2017-05-24.

[30] 王嘉硕, 韦亚一, 董立松, 范泰安, 苏晓菁. 光刻机投影物镜远心偏差的预测方法、装置、系统和介质. CN: CN115639731A, 2023-01-24.

[31] 王嘉硕, 韦亚一, 董立松, 苏晓菁. 光刻胶模型校准的优化图形选择方法、装置、系统和介质. CN: CN115616874A, 2023-01-17.

[32] 陈知枢, 韦亚一, 董立松. 一种光刻成像系统波像差优化方法、装置、设备及介质. CN: CN116540495A, 2023-08-04.

   

[1] Opto-Electronics Advancesnull. 2024, [2] Lin, Jiaxin, Dong, Lisong, Fan, Taian, Ma, Xu, Wei, Yayi. Fast aerial image model for EUV lithography using the adjoint fully convolutional network. OPTICS EXPRESS[J]. 2022, 30(7): 11944-11958, http://dx.doi.org/10.1364/OE.452420.
[3] Ding, H U W E N, Liu, L I H O N G, Dong, L I S O N G, Han, D A N D A N, Fan, T A I A N, Zhang, L I B I N, Wei, Y A Y, I. Study on forbidden pitch in plasmonic lithography: taking 365 nm wavelength thin silver film-based superlens imaging lithography as an example. OPTICS EXPRESS[J]. 2022, 30(19): 33869-33885, [4] Li, Ziqi, Dong, Lisong, Jing, Xuyu, Ma, Xu, Wei, Yayi. High-precision lithography thick-mask model based on a decomposition machine learning method. OPTICS EXPRESS[J]. 2022, 30(11): 17680-17697, http://dx.doi.org/10.1364/OE.454513.
[5] 马旭, 张胜恩, 潘毅华, 张钧碧, 余成臻, 董立松, 韦亚一. 计算光刻研究及进展. 激光与光电子学进展[J]. 2022, 59(9): 112-160, http://lib.cqvip.com/Qikan/Article/Detail?id=7107426687.
[6] Shao, Hua, Chen, Rui, Dong, Lisong, Li, Chen, Yan, Qi, Fan, Taian, Wei, Yayi. High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING[J]. 2022, 35(2): 309-317, http://dx.doi.org/10.1109/TSM.2022.3143838.
[7] 吴睿轩, 董立松, 马旭, 韦亚一. Compensation of EUV lithography mask blank defect based on an advanced genetic algorithm. Optics Express[J]. 2021, 29(18): 28872-28885, [8] Su, Xiaojing, Shen, Dong, Wei, Yayi, Su, Yajuan, Dong, Lisong, Chen, Rui, Gai, Tianyang, Zhang, Libin. Projection-based high coverage fast layout decomposing algorithm of metal layer for accelerating lithography friendly design at full chip level. JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3[J]. 2021, 20(1): http://dx.doi.org/10.1117/1.JMM.20.1.013401.
[9] Su, Xiaojing, Zhang, Libin, Wei, Yayi, Chen, Rui, Su, Yajuan, Dong, Lisong, Du, Chunshan, Wan, Qijian, Hu, Xinyi, Yuan, CM, Kim, RH. Via Optimization Methodology for Enhancing Robustness of Design at 14/12nm Technology Node. DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY XIV[J]. 2021, 11328: [10] Zhao, Rongbo, Dong, Lisong, Chen, Rui, Wei, Yayi. Aberration optimization in an extreme ultraviolet lithography projector via a BP neural network and simulated annealing algorithm. APPLIED OPTICS[J]. 2021, 60(5): 1341-1348, https://www.webofscience.com/wos/woscc/full-record/WOS:000617545500034.
[11] Lin, Jiaxin, Dong, Lisong, Fan, Taian, Wei, Yayi. Fast EUV Lithography Source Optimization Using Cascade Compressed Sensing. IEEE TRANSACTIONS ON NANOTECHNOLOGY[J]. 2021, 20: 826-836, [12] Su, Xiaojing, Wei, Yayi, Chen, Rui, Su, Yajuan, Dong, Lisong, Kwanc, Joe, Zhangc, Recoo, Du, Chunshan, Wan, Qijian, Hu, Xinyi, Yuan, CM, Kim, RH. Systematic DTCO Flow for Yield Improvement at 14/12nm Technology Node. DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY XIV[J]. 2021, 11328: [13] YingFei Wang, QingChun Zhang, Ping Li, XiaoJing Su, LiSong Dong, Rui Chen, LiBin Zhang, TianYang Gai, YaJuan Su, YaYi Wei, Tian Chun Ye. Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY[J]. 2021, 9: 6-9, https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff.
[14] Chen, Ying, Lin, Yibo, Chen, Rui, Dong, Lisong, Wu, Ruixuan, Gai, Tianyang, Ma, Le, Su, Yajuan, Wei, Yayi. EUV multilayer defect characterization via cycle-consistent learning. OPTICS EXPRESS[J]. 2020, 28(12): 18493-18506, http://dx.doi.org/10.1364/OE.394590.
[15] WEI YAYI. Impact of flare on source mask optimization in EUVL for 7nm technology node. Proc. SPIE. 2020, [16] Lin, Jiaxin, Dong, Lisong, Fan, Taian, Ma, Xu, Chen, Rui, Wei, Yayi. Fast extreme ultraviolet lithography mask near-field calculation method based on machine learning. APPLIED OPTICS[J]. 2020, 59(9): 2829-2838, https://www.webofscience.com/wos/woscc/full-record/WOS:000526529300021.
[17] Zhao, Rongbo, Dong, Lisong, Bo, Chunyue, Wei, Yayi, Su, Xiaojing. Analysis and modulation of aberration in an extreme ultraviolet lithography projector via rigorous simulation and a back propagation neural network. APPLIED OPTICS[J]. 2020, 59(23): 7074-7082, http://dx.doi.org/10.1364/AO.397250.
[18] 周玉梅. Analysis and Mitigation of Forbidden Pitch Effects for EUV Lithography. SPIE. 2020, [19] 郭成, 粟雅娟, 陈睿, 董立松, 张利斌, 陈颖, 盖天洋, 韦亚一. 化学外延方式的嵌段共聚物定向自组装. 微纳电子技术[J]. 2020, 155-162, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDLAST2020&filename=BDTQ202002012&v=MTQyOTk4ZVgxTHV4WVM3RGgxVDNxVHJXTTFGckNVUjdxZVorZHFGQ2ptVjdySUp5bmZmN0c0SE5ITXJZOUVab1I=.
[20] Wu, Yuanfang, Bao, Guangwen, Dong, Lisong, Wei, Yayi. A Study on Three Dimensional Mask Effect of Attenuated Phase-Shift Mask in Advanced Optical Lithography. CHINESE JOURNAL OF ELECTRONICS[J]. 2020, 29(4): 648-650, http://lib.cqvip.com/Qikan/Article/Detail?id=7102419705.
[21] 王英菲, 张青淳, 苏晓菁, 董立松, 陈睿, 张利斌, 盖天洋, 粟雅娟, 韦亚一, 叶甜春. 先进工艺下的版图邻近效应研究进展. 微电子学[J]. 2020, 50(5): 675-682, https://kns.cnki.net/KCMS/detail/detail.aspx?dbcode=CJFQ&dbname=CJFDLAST2020&filename=MINI202005012&v=MTMwNTExVDNxVHJXTTFGckNVUjdxZVp1ZHVGeWpnVkwvQktDVEZaN0c0SE5ITXFvOUVab1I4ZVgxTHV4WVM3RGg=.
[22] 邹雄峰, 董立松, 陈志刚, 韦亚一. PECVD参数对含氢非晶碳刻蚀特性的影响研究. 微电子学[J]. 2020, 126-131, http://lib.cqvip.com/Qikan/Article/Detail?id=00002G4L5V7G7JP0MPDO8JP0MHR.
[23] 杨双, 石新新, 伍宏, 粟雅娟, 董立松, 陈睿, 张利斌, 苏晓菁, 陈颖, 盖天洋, 郭成, 屈通, 韦亚一. 针对更精确电迁移预测应用的热耦合模型建模. 微电子学[J]. 2020, 50(5): 732-737, http://lib.cqvip.com/Qikan/Article/Detail?id=7103260439.
[24] WEI YAYI. Compressive sensing method for EUV source optimization using different bases. Proc. SPIE. 2020, [25] Hao Yunyun, Dong Lisong, Chen Xi, Chen Rui, Fan Taian, Wei Yayi, Ye Tianchun, Itani T, Gargini PA, Naulleau PP, Ronse KG. Impact of EUV Multilayer Mask Defects on Imaging Performance and its Correction Methods. INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2019null. 2019, 11147: [26] 明瑞锋, 韦亚一, 董立松. 光学系统像差对极紫外光刻成像特征尺寸的影响. 光学学报[J]. 2019, 39(12): 273-279, http://lib.cqvip.com/Qikan/Article/Detail?id=7100906888.
[27] Xu Buqing, Ma Ling, Zou Xiongfeng, Dong Lisong, Wei Yayi, Ukraintsev VA, Adan O. A diffraction-based overlay model based on FDTD method. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXIIInull. 2019, 10959: [28] Ma Le, Duan Yingli, Dong Lisong, Zhang Libin, Wei Yayi, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. DESIGN DRIVEN TEST PATTERNS FOR SMO OPC AND SPA. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500078.
[29] Chen, Ying, Lin, Yibo, Dong, Lisong, Gai, Tianyang, Chen, Rui, Su, Yajuan, Wei, Yayi, Pan, David Z. SoulNet: ultrafast optical source optimization utilizing generative neural networks for advanced lithography. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS[J]. 2019, 18(4): http://dx.doi.org/10.1117/1.JMM.18.4.043506.
[30] Fan Taian, Ma Xu, Wei Yayi, Dong Lisong, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. EUV MASK NEAR-FIELD SYNTHESIS. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500090.
[31] Gai Tianyang, Chen Ying, Gao Pengzheng, Su Xiaojing, Dong Lisong, Su Yajuan, Wei Yayi, Ye Tianchun, Cain JP. Sample patterns extraction from layout automatically based on hierarchical cluster algorithm for lithography process optimization. DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY XIIInull. 2019, 10962: [32] Hu Haoru, Dong Lisong, Wei Yayi, Zhang Yonghua, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. PREDICTION MODEL OF ETCHING BIAS BASED ON ARTIFICIAL NEURAL NETWORK. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500177.
[33] Su Xiaojing, Dong Lisong, Wei Yayi, Su Yajuan, Chen Rui, Du Chunshan, Cain JP. Design Rule Exploration for Width Sensitive Zone for Metal Layers in Advanced Nodes. DESIGNPROCESSTECHNOLOGYCOOPTIMIZATIONFORMANUFACTURABILITYXIIInull. 2019, 10962: [34] Su, Xiaojing, Shen, Dong, Wei, Yayi, Fan, Taian, Dong, Lisong, Zhang, Libin, Su, Yajuan, Chen, Rui, Ye, Tianchun. Probability prediction model for bridging defects induced by combined influences from lithography and etch variations. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS[J]. 2019, 18(2): [35] Zhang Yonghua, Dong Lisong, Wei Yayi, Hu Haoru, Claeys C, Huang R, Wu H, Lin Q, Liang S, Song P, Guo Z, Lai K, Zhang Y, Qu X, Lung HL, Yu W. THE IMPACT OF SEGMENT LENGTH ON THE PROCESS WINDOW IN SMO. 2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)null. 2019, http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000490874500109.
[36] Zhao Rongbo, Dong Lisong, Chen Rui, Wei Yayi, Itani T, Gargini PA, Naulleau PP, Ronse KG. Impact of mask topography and flare on process window of EUV lithography. INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2019null. 2019, 11147: [37] Lin, Jiaxin, Dong, Lisong, Fan, Taian, Ma, Xu, Wei, Yayi, Ye, Tianchun. Learning-based compressive sensing method for EUV lithographic source optimization. OPTICS EXPRESS[J]. 2019, 27(16): 22563-22581, [38] Su Xiaojing, Chen Rui, Wei Yayi, Su Yajuan, Dong Lisong, Rankin JH, Preil ME. A Fast DFM-Driven Standard Cell Qualification Approach for Critical Layers of 14nm Technology Node. PHOTOMASK TECHNOLOGY 2019null. 2019, 11148: [39] Wu Ruixuan, Dong Lisong, Chen Rui, Ye Tianchun, Wei Yayi, Itani T, Gargini PA, Naulleau PP, Ronse KG. A Method for Compensating Lithographic Influence of EUV Mask Blank Defects by an Advanced Genetic Algorithm. INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2019null. 2019, 11147: [40] Buqing Xu, Qiang Wu, Lisong Dong, Yayi Wei. Selection of DBO measurement wavelength for bottom mark asymmetry based on FDTD method. 半导体学报:英文版[J]. 2019, 40(12): 101-106, http://lib.cqvip.com/Qikan/Article/Detail?id=7100567375.
[41] WEI YAYI. RESIST MODEL SETUP FOR NEGATIVE TONE DEVELOPMENT AT 14NM NODE. IEEE. 2018, [42] He, Jianfang, Dong, Lisong, Zhao, Lijun, Wei, Yayi, Ye, Tianchun. Retargeting of forbidden-dense-alternate structures for lithography capability improvement in advanced nodes. APPLIED OPTICS[J]. 2018, 57(27): 7811-7817, https://www.webofscience.com/wos/woscc/full-record/WOS:000445075500021.
[43] Zhang, Libin, Ma, Le, Chen, Rui, He, Jianfang, Su, Xiaojing, Dong, Lisong, Su, Yajuan, Wei, Yayi. Pattern quality and defect evaluation based on cross correlation and power spectral density methods. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[J]. 2018, 36(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000444809600019.
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（1） 计算光刻与版图优化, 电子工业出版社, 2021-01, 第 3 作者

   

（ 1 ） 超大数值孔径光刻中的负显影模型研究, 负责人, 国家任务, 2019-01--2021-12
（ 2 ） 5纳米光刻技术方案与设计规则优化, 参与, 国家任务, 2017-01--2020-12
（ 3 ） 自由电子激光光源下高数值孔径EUV光刻成像的快速仿 真与性能优化研究, 负责人, 国家任务, 2023-01--2026-12

已指导学生

陈知枢  硕士研究生  085400-电子信息  

现指导学生

张双  博士研究生  080903-微电子学与固体电子学  

李晨  硕士研究生  080903-微电子学与固体电子学  

李金洁  硕士研究生  085400-电子信息  

姚德龙  硕士研究生  085400-电子信息