基本信息
罗帅 男 中国科学院半导体研究所
电子邮件： Luoshuai08@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号
邮政编码：
电子邮件： Luoshuai08@semi.ac.cn
通信地址： 北京市海淀区清华东路甲35号
邮政编码：
研究领域
化合物半导体芯片材料外延生长、器件制备及应用研究
招生信息
招生专业
0805Z2-半导体材料与器件
招生方向
半导体激光器，半导体光探测器，半导体异质结晶体管
教育背景
2008-07--2013-06 中国科学院大学微电子学与固体电子学 工学博士
2004-09--2008-06 北京师范大学物理系 本科
2004-09--2008-06 北京师范大学物理系 本科
学历
工作经历
工作简历
2016-02~现在, 江苏华兴激光科技有限公司, 总经理
2013-07~现在, 中国科学院半导体研究所, 助理研究员/副研究员
2013-07~现在, 中国科学院半导体研究所, 助理研究员/副研究员
出版信息
发表论文
（1） 分子束外延GaAs/Si（001）材料反相畴的湮灭机理, Annihilation Mechanism of Antiphase Domains in GaAs/Si(001)Materials Grown by Molecular Beam Epitaxy, 中国激光, 2022, 第 12 作者
（2） Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition, Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*, CHINESE PHYSICS B, 2021, 第 2 作者
（3） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 第 5 作者
（4） Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm, APPLIED PHYSICS LETTERS, 2016, 第 2 作者
（5） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETTERS, 2016, 第 6 作者
（6） Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 2 作者
（7） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 第 5 作者
（8） 2004 nm Ridge Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 2 作者
（9） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, 中国物理快报：英文版, 2016, 第 4 作者
（10） Single-section mode-locked 1.55-mu m InAs/InP quantum dot lasers grown by MOVPE, OPTICS COMMUNICATIONS, 2016, 第 2 作者
（11） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, CHINESE PHYSICS LETTERS, 2016, 第 4 作者
（12） Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors, MATERIALS LETTERS, 2016, 第 3 作者
（13） Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors, APPLIED SURFACE SCIENCE, 2016, 第 3 作者
（14） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETT., 2016, 第 6 作者
（15） Longer than 1.9 ��m photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 7 作者
（16） Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating, APPLIED OPTICS, 2015, 第 2 作者
（17） Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 第 6 作者
（18） Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation, AIP ADVANCES, 2015, 第 3 作者
（19） Longer than 1.9 mu m photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 7 作者
（20） Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal, SOLID STATE COMMUNICATIONS, 2015, 第 7 作者
（21） Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 5 作者
（22） The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 6 作者
（23） Enhanced performance of quantum dot solar cells based on type II quantum dots, JOURNAL OF APPLIED PHYSICS, 2014, 第 3 作者
（24） InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, CHINESE PHYSICS LETTERS, 2013, 第 1 作者
（25） Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2013, 第 1 作者
（26） Metalorganic chemical vapor deposition growth of inas/gasb type ii superlattices with controllable asxsb1-xinterfaces, NANOSCALE RESEARCH LETTERS, 2012, 第 3 作者
（27） Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition, EPL, 2012, 第 3 作者
（28） Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, CHINESE PHYSICS LETTERS, 2012, 第 3 作者
（2） Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition, Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition*, CHINESE PHYSICS B, 2021, 第 2 作者
（3） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 第 5 作者
（4） Flat-topped ultrabroad stimulated emission from chirped InAs/InP quantum dot laser with spectral width of 92 nm, APPLIED PHYSICS LETTERS, 2016, 第 2 作者
（5） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETTERS, 2016, 第 6 作者
（6） Ultrashort pulse and high power mode-locked laser with chirped InAs/InP quantum dot active layers, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 2 作者
（7） InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition, NANOTECHNOLOGY, 2016, 第 5 作者
（8） 2004 nm Ridge Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells, IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 第 2 作者
（9） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, 中国物理快报：英文版, 2016, 第 4 作者
（10） Single-section mode-locked 1.55-mu m InAs/InP quantum dot lasers grown by MOVPE, OPTICS COMMUNICATIONS, 2016, 第 2 作者
（11） Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers, CHINESE PHYSICS LETTERS, 2016, 第 4 作者
（12） Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors, MATERIALS LETTERS, 2016, 第 3 作者
（13） Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors, APPLIED SURFACE SCIENCE, 2016, 第 3 作者
（14） Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts, NANO LETT., 2016, 第 6 作者
（15） Longer than 1.9 ��m photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 7 作者
（16） Enhanced performance of tunable external-cavity 1.5 mu m InAs/InP quantum dot lasers using facet coating, APPLIED OPTICS, 2015, 第 2 作者
（17） Two Different Growth Mechanisms for Au-Free InAsSb Nanowires Growth on Si Substrate, CRYSTAL GROWTH & DESIGN, 2015, 第 6 作者
（18） Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation, AIP ADVANCES, 2015, 第 3 作者
（19） Longer than 1.9 mu m photoluminescence emission from InAs quantum structure on GaAs (001) substrate, APPLIED PHYSICS LETTERS, 2015, 第 7 作者
（20） Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal, SOLID STATE COMMUNICATIONS, 2015, 第 7 作者
（21） Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2014, 第 5 作者
（22） The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy, JOURNAL OF CRYSTAL GROWTH, 2014, 第 6 作者
（23） Enhanced performance of quantum dot solar cells based on type II quantum dots, JOURNAL OF APPLIED PHYSICS, 2014, 第 3 作者
（24） InAs/InGaAsP/InP Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition, CHINESE PHYSICS LETTERS, 2013, 第 1 作者
（25） Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2013, 第 1 作者
（26） Metalorganic chemical vapor deposition growth of inas/gasb type ii superlattices with controllable asxsb1-xinterfaces, NANOSCALE RESEARCH LETTERS, 2012, 第 3 作者
（27） Formation of AsxSb1-x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition, EPL, 2012, 第 3 作者
（28） Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs, CHINESE PHYSICS LETTERS, 2012, 第 3 作者
科研活动
科研项目
（ 1 ） 拓扑腔面发射激光芯片, 参与, 中国科学院计划, 2021-06--2026-06
（ 2 ） 超宽调谐InAs/InP啁啾结构量子点外腔激光器制备与应用研究, 负责人, 国家任务, 2020-01--2023-12
（ 2 ） 超宽调谐InAs/InP啁啾结构量子点外腔激光器制备与应用研究, 负责人, 国家任务, 2020-01--2023-12