基本信息
邓惠雄  男  博导  中国科学院半导体研究所
email: hxdeng@semi.ac.cn
address: 北京海淀区清华东路甲35号半导体所2号楼501
postalCode: 100086

招生信息

   
招生专业
070205-凝聚态物理
招生方向
半导体物理,半导体缺陷物理,半导体材料物性探究与设计

教育背景

2005-09--2010-12   中国科学院半导体研究所   理学博士
2001-09--2005-07   内蒙古大学   学士

工作经历

   
工作简历
2018-01~现在, 中国科学院半导体研究所, 研究员
2015-01~2017-12,中国科学院半导体研究所, 副研究员
2014-02~2014-12,中国科学院半导体研究所, 助理研究员
2011-04~2014-01,美国再生能源国家实验室, 博士后
2011-01~2011-04,中国科学院半导体研究所, 助理研究员
2005-09~2010-12,中国科学院半导体研究所, 理学博士
2001-09~2005-07,内蒙古大学, 学士
社会兼职
2024-01-01-今,半导体学报, 编委
2017-07-01-今,中国电子学会, 会员
2017-03-30-今,美国物理学会, 会员
2017-01-01-今,中科院青年创新促进会, 会员

教授课程

固体物理-1班
固体物理
固体物理-2班
半导体功能材料设计
固体物理基础(专业班)
固体物理基础
半导体信息材料设计

专利与奖励

   
专利成果
( 1 ) 一种宽光谱偏振光探测器及其制备方法, 2021, 第 6 作者, 专利号: CN113629158A

( 2 ) 基于核壳纳米线的柔性偏振光探测器及制备方法, 2019, 第 4 作者, 专利号: CN110459632A

( 3 ) 基于肖特基结的线偏振光探测器及其制备方法, 2019, 第 5 作者, 专利号: CN110416348A

( 4 ) 二维磁性半导体材料MnIn 2 Se 4 的制备方法及在光探测器和场效应晶体管的应用, 2019, 第 4 作者, 专利号: CN110257916A

( 5 ) 准一维硫化锡纳米线的宽波段偏振光探测器及其制备方法, 2019, 第 4 作者, 专利号: CN110190154A

出版信息

   
发表论文
(1) Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6, NATURE COMMUNICATIONS, 2023, 第 21 作者
(2) Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 第 6 作者  通讯作者
(3) Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP2S6, NATURE COMMUNICATIONS, 2023, 第 21 作者
(4) Effectively tuning the stability and optoelectronic properties of halide perovskites by B-site alloying, Effectively tuning the stability and optoelectronic properties of halide perovskites by B-site alloying, 中国科学:物理学、力学、天文学英文版, 2023, 第 2 作者
(5) Band-gap trend of corundum oxides α-M2O3 (M = Co, Rh, Ir): An ab initio study, PHYSICAL REVIEW B, 2023, 第 6 作者
(6) Surface in situ reconstruction of inorganic perovskite films enabling long carrier lifetimes and solar cells with 21% efficiency, NATURE ENERGY, 2023, 第 9 作者  通讯作者
(7) 宽禁带半导体掺杂机制研究进展, Review of defect physics and doping control in wide-band-gap semiconductors, 科学通报, 2023, 第 1 作者  通讯作者
(8) Low symmetric sub-wavelength array enhanced lensless polarization-sensitivity photodetector of germanium selenium, SCIENCE BULLETIN, 2023, 第 16 作者  通讯作者
(9) Electronic origin of the unusual thermal properties of copper-based semiconductors:The s-d coupling-induced large phonon anharmonicity, Electronic origin of the unusual thermal properties of copper-based semiconductors:The s-d coupling-induced large phonon anharmonicity, 中国科学:物理学、力学、天文学英文版, 2023, 第 10 作者  通讯作者
(10) Band-gap trend of corundum oxides �����M2O3 (M=Co, Rh, Ir): An ab initio study, Physical Review B, 2023, 第 6 作者  通讯作者
(11) Exploring the Metal���Insulator Transition in (Ga, Mn) As by Molecular Absorption, Nano Letters, 2022, 第 9 作者  通讯作者
(12) Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors, ADVANCED MATERIALS, 2022, 第 9 作者
(13) Doping Engineering in the MoS2/SnSe2 Heterostructure toward High���Rejection���Ratio Solar���Blind UV Photodetection., Advanced Materials, 2022, 第 13 作者  通讯作者
(14) Band offset trends in IV-VI layered semiconductor heterojunctions, JOURNAL OF PHYSICS-CONDENSED MATTER, 2022, 第 7 作者  通讯作者
(15) Fundamental Identification of Defect-Related Electron Trap in Hf1���x Zr x O2 Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial, physica status solidi (RRL) – Rapid Research Letters, 2022, 第 5 作者  通讯作者
(16) Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate, APPLIED PHYSICS LETTERS, 2022, 第 4 作者  通讯作者
(17) Nitrogen-vacancy centers promote super-radiant maser performance, Nitrogen-vacancy centers promote super-radiant maser performance, SCIENCE CHINA-MATERIALS, 2022, 第 2 作者  通讯作者
(18) Overcoming the doping limit in semiconductors via illumination, Physical Review B, 2022, 第 5 作者  通讯作者
(19) Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS, ADVANCED MATERIALS, 2022, 第 6 作者
(20) Clarification of the relative magnitude of exciton binding energies in ZnO and SnO2, APPLIED PHYSICS LETTERS, 2022, 第 6 作者  通讯作者
(21) The mechanism of improving germanium metal���oxide���semiconductor field-effect transistors��� reliability by high-k dielectric and yttrium-doping: From the view of charge trapping, Journal of Applied Physics, 2022, 第 3 作者
(22) Inactive (PbI2)(2)RbCl stabilizes perovskite films for efficient solar cells, SCIENCE, 2022, 第 6 作者
(23) Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride, NANO LETTERS, 2022, 第 8 作者
(24) First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe2 and WSe2, Journal of Physical Chemistry C, 2022, 第 5 作者  通讯作者
(25) Carrier-stabilized hexagonal Ge, PHYSICAL REVIEW B, 2021, 第 2 作者  通讯作者
(26) First-Principles Study of Intrinsic Point Defects of Monolayer GeS, First-Principles Study of Intrinsic Point Defects of Monolayer GeS, CHINESE PHYSICS LETTERS, 2021, 第 10 作者  通讯作者
(27) Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic, APPLIED PHYSICS LETTERS, 2021, 第 4 作者  通讯作者
(28) Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors, PHYSICAL REVIEW APPLIED, 2021, 第 4 作者  通讯作者
(29) Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides, Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides, LIGHT-SCIENCE & APPLICATIONS, 2021, 第 6 作者  通讯作者
(30) Decoupling of the Electrical and Thermal Transports in Strongly Coupled Interlayer Materials, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2021, 第 7 作者  通讯作者
(31) Ⅳ族半导体Ge_(1-x)Sn_(x)中的自发磁化及磁阻回滞现象, Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge_(1���x)Sn_(x)alloys, 科学通报:英文版, 2021, 第 5 作者
(32) Spontaneous ferromagnetism and magnetoresistance hysteresis in Ge1���xSnx alloys, SCIENCE BULLETIN, 2021, 第 5 作者
(33) Electronic structures and band alignment transition in double-wall MoS2/WS2 nanotubes for optoelectronic applications, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 第 5 作者
(34) Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS, ADVANCED MATERIALS, 2021, 第 6 作者
(35) Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors, ADVANCED MATERIALS, 2021, 第 9 作者
(36) Origin of hydrogen passivation in 4H-SiC, PHYSICAL REVIEW MATERIALS, 2021, 第 3 作者
(37) First-principles study of defect control in thin-film solar cell materials, First-principles study of defect control in thin-film solar cell materials, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2021, 第 1 作者
(38) Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III���V semiconductors, JOURNALOFSEMICONDUCTORS, 2021, 第 1 作者  通讯作者
(39) Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films, APL MATERIALS, 2021, 第 9 作者  通讯作者
(40) Recent Advances of 2D Materials in Nonlinear Photonics and Fiber Lasers, ADVANCED OPTICAL MATERIALS, 2020, 第 5 作者
(41) Ultrafast photonics of two dimensional AuTe 2 Se 4 in fiber lasers, COMMUNICATIONSPHYSICS, 2020, 第 7 作者
(42) Extrinsic Photoconduction Induced Short���Wavelength Infrared Photodetectors Based on Ge���Based Chalcogenides, SMALL, 2020, 第 17 作者
(43) Large cation ethylammonium incorporated perovskite for efficient and spectra stable blue light-emitting diodes, NATURE COMMUNICATIONS, 2020, 第 5 作者
(44) Realistic dimension-independent approach for charged-defect calculations in semiconductors, PHYSICALREVIEWB, 2020, 第 5 作者  通讯作者
(45) Symmetry-Reduction Enhanced Polarization-Sensitive Photodetection in Core���Shell SbI3/Sb2O3 van der Waals Heterostructure, SMALL, 2020, 第 11 作者
(46) 高效钙钛矿太阳能电池中缓冲层界面工程的深入理解:第一性原理研究, Deep insights into interface engineering by buffer layer for efficient perovskite solar cells: a firstprinciples study, 中国科学:材料科学(英文版), 2020, 第 5 作者
(47) Deep insights into interface engineering by buffer layer for efficient perovskite solar cells: a first-principles study, SCIENCE CHINA-MATERIALS, 2020, 第 5 作者
(48) Defect physics and doping engineering in semiconductor optoelectronic materials, CHINESE SCIENCE BULLETIN-CHINESE, 2020, 第 3 作者  通讯作者
(49) Ultrafast photonics of two dimensional AuTe2Se4/3 in fiber lasers, COMMUNICATIONS PHYSICS, 2020, 第 7 作者
(50) 半导体光电材料中的缺陷和掺杂调控, Defect physics and doping engineering in semiconductor optoelectronic materials, 科学通报, 2020, 第 3 作者
(51) Reviewing and understanding the stability mechanism of halide perovskite solar cells, Reviewing and understanding the stability mechanism of halide perovskite solar cells, INFOMAT, 2020, 第 6 作者  通讯作者
(52) Quasiparticle Band Structure and Optical Properties of the Janus Monolayer and Bilayer SnSSe, JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 第 5 作者
(53) Orbital localization induced magnetization in nonmetal-doped phosphorene, JOURNALOFPHYSICSDAPPLIEDPHYSICS, 2020, 第 5 作者  通讯作者
(54) Two-dimensional XSe2(X = Mn,V) based magnetic tunneling junctions with high Curie temperature, Two-dimensional XSe2(X = Mn,V) based magnetic tunneling junctions with high Curie temperature, 中国物理B:英文版, 2019, 第 5 作者
(55) Two-dimensional XSe2 (X = Mn, V) based magnetic tunneling junctions with high Curie temperature, CHINESE PHYSICS B, 2019, 第 5 作者
(56) Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions, Origin of the anomalous trends in band alignment of GaX/ZnGeX2(X = N, P, As, Sb) heterojunctions, 半导体学报:英文版, 2019, 第 2 作者
(57) The Coulomb interaction in van der Waals heterostructures, The Coulomb interaction in van der Waals heterostructures, SCIENCE CHINA. PHYSICS, MECHANICS & ASTRONOMY, 2019, 第 3 作者
(58) A systematic study of the negative thermal expansion in zinc-blende and diamond-like semiconductors, NEW JOURNAL OF PHYSICS, 2019, 第 6 作者  通讯作者
(59) Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single-Crystal Field-Effect Transistors, ADVANCED MATERIALS, 2019, 第 14 作者
(60) High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism, NANOSCALE, 2019, 第 6 作者  通讯作者
(61) Machine learning in materials science, Machine learning in materials science, INFOMAT, 2019, 第 5 作者
(62) High-Efficiency Single-Component Organic Light-Emitting Transistors, ADVANCED MATERIALS, 2019, 第 8 作者
(63) Origin of the anomalous trends in band alignment of GaX/ZnGeX2 (X = N, P, As, Sb) heterojunctions, JOURNAL OF SEMICONDUCTORS, 2019, 第 2 作者  通讯作者
(64) Design Principles of p-Type Transparent Conductive Materials, ACS APPLIED MATERIALS & INTERFACES, 2019, 第 2 作者  通讯作者
(65) Electronic structure and exciton shifts in Sb-doped MoS2 monolayer, NPJ 2D MATERIALS AND APPLICATIONS, 2019, 第 4 作者
(66) Mixed-valence-driven quasi-1D SnIISnIVS3 with highly polarization-sensitive UV-vis-NIR photoresponse, Advanced Functional Materials, 2019, 
(67) Thickness-Dependent Ultrafast Photonics of SnS2 Nanolayers for Optimizing Fiber Lasers, ACS APPLIED NANO MATERIALS, 2019, 第 7 作者  通讯作者
(68) Mixed-Valence-Driven Quasi-1D (SnSnS3)-Sn-II-S-IV with Highly Polarization-Sensitive UV-vis-NIR Photoresponse, ADVANCED FUNCTIONAL MATERIALS, 2019, 第 4 作者
(69) The Coulomb interaction in van der Waals heterostructures, The Coulomb interaction in van der Waals heterostructures, 中国科学:物理学、力学、天文学英文版, 2019, 第 3 作者
(70) Unraveling the Defect Emission and Exciton-Lattice Interaction in Bilayer WS2, JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 第 7 作者
(71) Abnormal diffusion behaviors of Cu atoms in van der Waals layered material MoS2, JOURNAL OF MATERIALS CHEMISTRY C, 2019, 第 7 作者  通讯作者
(72) Structural Phase Transition and a Mutation of Electron Mobility in Zn_xCd_(1-x)O Alloys, Structural Phase Transition and a Mutation of Electron Mobility in Zn_xCd_(1-x)O Alloys, 中国物理快报:英文版, 2018, 第 3 作者
(73) Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z 2 Topological Insulator, Chinese Physics Letters, 2018, 第 1 作者
(74) Tuning transport performance in two-dimensional metal-organic framework semiconductors: Role of the metal d band, APPLIED PHYSICS LETTERS, 2018, 第 7 作者
(75) Band structure engineering and defect control of oxides for energy applications, Band structure engineering and defect control of oxides for energy applications, 中国物理B:英文版, 2018, 第 1 作者
(76) Band structure engineering and defect control of oxides for energy applications, Band structure engineering and defect control of oxides for energy applications, CHINESE PHYSICS B, 2018, 第 1 作者
(77) Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications, JOURNAL OF MATERIALS CHEMISTRY C, 2018, 第 5 作者  通讯作者
(78) Comment on "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors", PHYSICAL REVIEW LETTERS, 2018, 第 1 作者  通讯作者
(79) Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator, Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator, CHINESE PHYSICS LETTERS, 2018, 第 1 作者  通讯作者
(80) Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic, ADVANCED FUNCTIONAL MATERIALS, 2018, 第 6 作者
(81) Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator, Atomic-Ordering-Induced Quantum Phase Transition between Topological Crystalline Insulator and Z_2 Topological Insulator, 中国物理快报:英文版, 2018, 第 1 作者
(82) Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers., NANOSCALE, 2018, 第 5 作者
(83) Structural Phase Transition and a Mutation of Electron Mobility in Zn_xCd_(1-x)O Alloys, Structural Phase Transition and a Mutation of Electron Mobility in Zn_xCd_(1-x)O Alloys, CHINESE PHYSICS LETTERS, 2018, 第 3 作者  通讯作者
(84) Unified theory of direct or indirect band-gap nature of conventional semiconductors, PHYSICAL REVIEW B, 2018, 第 2 作者
(85) Highly polarization sensitive photodetectors based on quasi-1D titanium trisulfide (TiS3), NANOTECHNOLOGY, 2018, 第 6 作者
(86) Metal and ligand effects on the stability and electronic properties of crystalline two-dimensional metal-benzenehexathiolate coordination compounds, JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 第 4 作者
(87) Structural Phase Transition and a Mutation of Electron Mobility in Zn_��Cd_(1�����)O Alloys, CHINESE PHYSICS LETTERS, 2018, 第 3 作者
(88) Earth-Abundant and Non-Toxic SiX (X = S, Se) Monolayers as Highly Efficient Thermoelectric Materials, JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 第 3 作者
(89) Stable 6%-efficient Sb2Se3 solar cells with a ZnO buffer layer, NATURE ENERGY, 2017, 第 5 作者
(90) Composition-tunable 2D SnSe2(1_x)S2x alloys towards efficient bandgap engineering and high performance (opto)electronics, JOURNAL OF MATERIALS CHEMISTRY C, 2017, 第 7 作者
(91) Light induced double 'on' state anti-ambipolar behavior and self-driven photoswitching in p-WSe2/n-SnS2 heterostructures, 2D MATERIALS, 2017, 第 6 作者
(92) Earth-Abundant and Non-Toxic SiX (X = S, Se) Monolayers as Highly Efficient Thermoelectric Materials, JOURNAL OF PHYSICAL CHEMISTRY B, 2017, 第 3 作者
(93) Modulation of electronic and optical properties in mixed halide perovskites CsPbCl3xBr3(1-x) and CsPbBr3xI3(1-x), APPLIED PHYSICS LETTERS, 2017, 第 3 作者
(94) Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga bilayers, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 
(95) Flexible photodetectors based on phase dependent Pbl(2) single crystals, JOURNAL OF MATERIALS CHEMISTRY C, 2016, 第 3 作者
(96) Anti-Ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides, ACS APPLIED MATERIALS & INTERFACES, 2016, 第 6 作者
(97) Wavelength dependent UV-Vis photodetectors from SnS2 flakes, RSCADV, 2016, 第 4 作者
(98) Wavelength dependent UV-Vis photodetectors from SnS2 flakes, RSC ADVANCES, 2016, 第 4 作者
(99) Suppress carrier recombination by introducing defects: The case of Si solar cell, APPLIED PHYSICS LETTERS, 2016, 第 3 作者
(100) Origin of the Distinct Diffusion Behaviors of Cu and Ag in Covalent and Ionic Semiconductors, PHYSICAL REVIEW LETTERS, 2016, 第 1 作者
(101) Sulfur vacancy activated field effect transistors based on ReS2 nanosheets, NANOSCALE, 2015, 第 2 作者
(102) Chemical trends of stability and band alignment of lattice-matched II-VI/III-V semiconductor interfaces, PHYSICAL REVIEW B, 2015, 第 1 作者  通讯作者
(103) The origin of electronic band structure anomaly in topological crystalline insulator group-IV tellurides, NPJ COMPUTATIONAL MATERIALS, 2015, 第 2 作者
(104) Stable interface structures of heterovalent semiconductor superlattices: The case of (GaSb)n(ZnTe)n, COMPUTATIONAL MATERIALS SCIENCE, 2015, 第 1 作者  通讯作者
(105) Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets, NANOSCALE, 2015, 第 2 作者
(106) Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys, PHYSICAL REVIEW B, 2014, 第 2 作者
(107) Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene, 2014, 第 7 作者
(108) Exceptional Optoelectronic Properties of Hydrogenated Bilayer Silicene, PHYSICAL REVIEW X, 2014, 第 2 作者
(109) Origin of Reduced Efficiency in Cu(In,Ga)Se-2 Solar Cells With High Ga Concentration: Alloy Solubility Versus Intrinsic Defects, IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 第 3 作者
(110) Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors, PHYSICAL REVIEW B, 2013, 第 1 作者  通讯作者
(111) Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures, PHYSICAL REVIEW B, 2012, 第 1 作者  通讯作者
(112) First-principles study of magnetic properties in mo-doped graphene, JOURNALOFPHYSICSCONDENSEDMATTER, 2011, 第 2 作者
(113) Origin of antiferromagnetism in coo: a density functional theory study, APPLIED PHYSICS LETTERS, 2010, 第 1 作者  通讯作者
(114) Band crossing in isovalent semiconductor alloys with large size mismatch: first-principles calculations of the electronic structure of bi and n incorporated gaas, PHYSICAL REVIEW B, 2010, 第 1 作者  通讯作者
(115) Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 第 1 作者
(116) Quantum mechanical study on tunnelling and ballistic transport of nanometer si mosfets, CHINESE PHYSICS LETTERS, 2010, 第 1 作者  通讯作者
(117) Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: a comparison for charge density occupation methods, JOURNAL OF APPLIED PHYSICS, 2009, 第 2 作者
(118) A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm mosfets, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 第 2 作者
(119) Multiple valley couplings in nanometer si metal-oxide-semiconductor field-effect transistors, JOURNAL OF APPLIED PHYSICS, 2008, 第 1 作者  通讯作者

科研活动

   
科研项目
( 1 ) 感算共融前沿物理研究, 负责人, 中国科学院计划, 2023-09--2028-08
( 2 ) 中科院创新促进会优秀会员, 负责人, 中国科学院计划, 2022-01--2024-12
( 3 ) 万小时工作寿命的钙钛矿太阳电池关键技术, 参与, 国家任务, 2020-11--2024-10
( 4 ) 半导体中的缺陷物理与掺杂调控, 负责人, 国家任务, 2020-01--2022-12
( 5 ) 硅基发光基础理论及器件关键技术, 参与, 国家任务, 2019-08--2023-07
( 6 ) 温度引起的半导体能带结构和输运性质的 重整化:电-声子相互作用效应, 负责人, 国家任务, 2019-01--2022-12
( 7 ) 中国科学院青年创新促进会会员, 负责人, 中国科学院计划, 2017-06--2020-12
( 8 ) 透明导电体的物理机理研究与新材料设计, 参与, 国家任务, 2017-01--2021-12
( 9 ) 环境友好型高稳定性太阳能电池的材料设计与器件研究, 参与, 国家任务, 2016-07--2020-06
( 10 ) 先进半导体热电材料微观机理的第一性原理研究及性能优化和设计, 负责人, 国家任务, 2015-01--2018-12
( 11 ) 透明导电氧化物纳米结构的掺杂、形状及尺寸效应的第一性原理研究, 负责人, 国家任务, 2012-01--2014-12
参与会议
(1)A realistic dimension-independent approach for charged defect calculations in semiconductors   中国物理学会2019秋季物理年会   2019-09-19
(2)Diffusion of Impurities in Semiconductors: Fundamental Understanding and Design   2017-08-20
(3)Diffusion of Impurities in Energy Materials: Fundamental Understanding and Design   2017中国材料大会   2017-07-10