基本信息
宋三年  男  硕导  中国科学院上海微系统与信息技术研究所
电子邮件: songsannian@mail.sim.ac.cn
通信地址: 上海市长宁路865号8号楼407室
邮政编码: 200050

招生信息

   
招生专业
080903-微电子学与固体电子学
080501-材料物理与化学
招生方向
相变存储器材料、工艺、器件和芯片

教育背景

2003-10--2008-09   同济大学   博士

工作经历

   
工作简历
2018-01~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2011-01~2017-12,中国科学院上海微系统与信息技术研究所, 副研究员
2008-11~2010-12,中科院上海微系统与信息技术研究所, 博士后
社会兼职
2019-11-01-2022-11-01,上海市电子学会, 副理事长

专利与奖励

   
奖励信息
(1) 2021年华为奥林帕斯先锋奖, 一等奖, 其他, 2021
(2) 上海市自然科学奖, 一等奖, 省级, 2020
(3) 2019年中国材料研究学会科学技术奖, 一等奖, 省级, 2019
(4) 第五届“纳米之星”创新创业大赛团队组一等奖, 一等奖, 其他, 2019
(5) 上海市科学发明奖, 二等奖, 省级, 2018
(6) 第二十届中国国际工业博览会创新银奖, 二等奖, 其他, 2018
专利成果
[1] 宋志棠, 宋三年. 一种相变存储器及其制作方法. CN: CN112599667A, 2021-04-02.

[2] 宋志棠, 郑龙, 宋三年, 任堃, 朱敏, 宋文雄. 相变薄膜结构、相变存储单元及其制备方法及相变存储器. CN: CN109935688B, 2021-03-19.

[3] 宋志棠, 郭天琪, 宋三年. 一种基于氧化物离子注入的选通材料、选通器单元及其制备方法. CN: CN109545964B, 2021-03-19.

[4] 宋三年, 薛媛, 宋志棠. 一种相变材料、相变存储单元及其制备方法. CN: CN112397644A, 2021-02-23.

[5] 宋志棠, 宋三年, 薛媛, 王若冰. 一种高稳定性相变存储单元及其制备方法. CN: CN112133825A, 2020-12-25.

[6] 宋志棠, 宋三年, 薛媛. 一种Ge-Te-Al-As阈值开关材料、阈值开关器件单元及其制备方法. CN: CN108110026B, 2020-10-20.

[7] 宋三年, 李林, 薛媛, 宋志棠. 钽-锑-碲相变材料的沉积方法及存储器单元的制备方法. CN: CN111564553A, 2020-08-21.

[8] 薛媛, 宋三年, 宋志棠. 一种Ta-Ge-Sb-Te相变材料及其制备方法和相变存储器单元. CN: CN111463345A, 2020-07-28.

[9] 宋志棠, 宋三年, 薛媛, 袁祯晖. 一种OTS选通材料、OTS选通单元及其制备方法和存储器. CN: CN111463346A, 2020-07-28.

[10] 宋志棠, 郑龙, 宋三年. 相变薄膜、相变存储单元及其制备方法及相变存储器. CN: CN109728162B, 2020-06-30.

[11] 宋志棠, 宋三年. 一种碳掺杂相变存储材料靶材及其制备方法. CN: CN110846626A, 2020-02-28.

[12] 李乐, 宋三年, 宋志棠. 相变薄膜材料、相变存储器单元及其制备方法. CN: CN106711325B, 2019-10-01.

[13] 章思帆, 吴良才, 刘广宇, 宋志棠, 宋三年. Al-Sc-Sb-Te相变材料、相变存储器单元及其制备方法. CN: CN110148668A, 2019-08-20.

[14] 宋志棠, 宋三年, 薛媛, 王若冰. 一种相变材料、相变存储单元及其制备方法. CN: CN110061131A, 2019-07-26.

[15] 宋文雄, 赵进, 宋志棠, 宋三年. 一种相变材料、相变存储单元及其制备方法. CN: CN110061131A, 2019-07-26.

[16] 刘燕, 宋志棠, 宋三年, 刘波. 一种三维堆叠相变存储阵列器件及其制备方法. CN: CN105655368B, 2018-09-25.

[17] 宋三年, 陈小刚, 宋志棠, 李喜, 陈后鹏. 存储阵列、存储对象逻辑关系的存储芯片及方法. CN: CN105632551B, 2018-09-25.

[18] 薛媛, 宋三年, 郭天琪, 宋志棠. 一种Al-Sb-Ge相变材料、相变存储器单元及其制备方法. CN: CN108110135A, 2018-06-01.

[19] 宋志棠, 陈小刚, 李喜, 宋三年, 陈后鹏. 行列互联的异构多核心类脑芯片及其使用方法. CN: CN105913119B, 2018-04-17.

[20] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种相变材料、该相变材料制成的相变存储器及制备方法. CN: CN104409628B, 2017-09-26.

[21] 宋志棠, 郑勇辉, 成岩, 刘卫丽, 宋三年, 朱敏. 用于相变存储器的Zr‑Sb‑Te系列相变材料及其制备方法. CN: CN104831235B, 2017-07-14.

[22] 郭天琪, 宋三年, 沈兰兰, 宋志棠. Ge‑Sb‑Se相变材料、相变存储器单元及其制备方法. CN: CN106299113A, 2017-01-04.

[23] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种Cr掺杂Ge 2 Sb 2 Te 5 相变材料、相变存储器单元及其制备方法. 中国: CN105047816A, 2015-11-11.

[24] 王青, 刘波, 夏洋洋, 张中华, 宋三年, 宋志棠, 封松林. 一种Sb-Te-Cr相变材料、相变存储器单元及其制备方法. CN: CN104716260A, 2015-06-17.

[25] 夏洋洋, 刘波, 王青, 张中华, 宋三年, 宋志棠, 封松林. 相变材料GeTe的耦合等离子体刻蚀方法. CN: CN104409333A, 2015-03-11.

[26] 宋三年, 宋志棠, 吴良才, 饶峰, 刘波, 彭程, 张中华. 钨-锑-碲相变材料沉积方法及相变存储单元制备方法. CN: CN103898474A, 2014-07-02.

[27] 顾怡峰, 宋志棠, 宋三年, 刘波, 封松林. 用于相变存储器的Al-Sb-Se材料及制备方法. CN: CN103855302A, 2014-06-11.

[28] 顾怡峰, 宋志棠, 席韡, 宋三年, 刘波, 封松林. 多级电阻转换存储单元及存储器. CN: CN103855301A, 2014-06-11.

[29] 宋志棠, 顾怡峰, 宋三年. 高速、高密度、低功耗的相变存储器单元及制备方法. CN: CN103682089A, 2014-03-26.

[30] 宋三年, 宋志棠, 张中华, 成岩, 蔡道林. 一种神经元器件及神经网络. CN: CN103530690A, 2014-01-22.

[31] 宋志棠, 任堃, 饶峰, 宋三年, 陈邦明. 相变存储单元及其制备方法. CN: CN103346258A, 2013-10-09.

[32] 张中华, 宋三年, 宋志棠, 彭程, 吕业刚. 用于相变存储器的Sn-Ge-Te薄膜材料及其制备方法. CN: CN103236495A, 2013-08-07.

[33] 张中华, 宋三年, 宋志棠, 吕叶刚. 用于相变存储器的Ga-Ge-Sb-Te薄膜材料. CN: CN103050624A, 2013-04-17.

[34] 宋三年, 宋志棠, 张中华, 顾怡峰. 钛-锑-碲相变材料沉积方法及相变存储单元的制备方法. CN: CN103000807A, 2013-03-27.

[35] 宋三年, 宋志棠, 吴良才, 饶峰, 刘波, 朱敏. 制备钛-锑-碲相变材料的方法及相变存储单元制备方法. CN: CN102978588A, 2013-03-20.

[36] 吕业刚, 宋三年, 宋志棠, 吴良才, 饶峰, 刘波. 具有类超晶格结构的相变存储单元及其制备方法. CN: CN102810636A, 2012-12-05.

[37] 吕业刚, 宋三年, 宋志棠, 吴良才, 饶峰, 刘波. 低功耗相变存储单元及其制备方法. CN: CN102779941A, 2012-11-14.

[38] 吴良才, 朱敏, 宋志棠, 饶峰, 宋三年, 刘波, 封松林. 一种Sb-Te-Ti相变存储材料及Ti-Sb 2 Te相变存储材料. 中国: CN102569652A, 2012-07-11.

[39] 吕业刚, 宋三年, 宋志棠. 相变存储材料及其制备方法、具有相变存储材料的存储器及其制备方法. CN: CN102544355A, 2012-07-04.

[40] 吕业刚, 宋三年, 彭程, 饶峰, 宋志棠, 刘波, 吴良才. 用于相变存储器的薄膜材料及其制备方法. CN: CN102361063A, 2012-02-22.

[41] 吴良才, 朱敏, 宋志棠, 饶峰, 宋三年, 彭程, 刘波, 封松林. 一种Sb-Te-Ti相变存储材料. CN: CN102268738A, 2011-12-07.

[42] 吕业刚, 宋三年, 宋志棠, 刘波, 饶峰, 吴良才. 一种相变存储材料及其制备方法. CN: CN102227015A, 2011-10-26.

[43] 吕业刚, 宋三年, 宋志棠. 纳米复合相变材料、制备方法及其在相变存储器中的应用. CN: CN102169958A, 2011-08-31.

[44] 宋三年, 宋志棠, 吕业刚. Sb 2 Te 3 -HfO 2 纳米复合相变材料及其在相变存储器中的用途. 中国: CN102157681A, 2011-08-17.

[45] 吕业刚, 宋三年, 宋志棠. 纳米复合相变材料及其在相变存储器中的用途. CN: CN102082228A, 2011-06-01.

[46] 宋志棠, 张挺, 饶峰, 吴良才, 宋三年. 复合相变存储材料、制备复合相变存储材料薄膜的方法. CN: CN101984512A, 2011-03-09.

[47] 宋三年, 宋志棠, 吕业刚. 低功耗抗疲劳的相变存储单元及制备方法. CN: CN101931049A, 2010-12-29.

[48] 宋三年, 宋志棠. 纳米复合相变材料、制备方法、及作为相变存储器的用途. CN: CN101783391A, 2010-07-21.

[49] 宋志棠, 宋三年. 低功耗高稳定性的相变存储单元及制备方法. CN: CN101752497A, 2010-06-23.

[50] 宋志棠, 陈邦明, 宋三年. 制备相变材料的溅射靶材的方法. CN: CN101665916A, 2010-03-10.

[51] 宋志棠, 陈邦明, 宋三年. 一种复合相变材料靶材及其制备方法. CN: CN101660119A, 2010-03-03.

[52] 宋三年, 宋志棠, 封松林. 一种纳米复合相变材料及其制备与应用. CN: CN101660118A, 2010-03-03.

[53] 宋三年, 宋志棠, 刘 波, 吴良才, 封松林. 导电氧化物过渡层及含该过渡层的相变存储器单元. CN: CN101615655A, 2009-12-30.

[54] 宋三年, 宋志棠, 万旭东, 谢志峰, 封松林. 一种纳米复合相变材料及其制备方法. CN: CN101521260A, 2009-09-02.

出版信息

   
发表论文
[1] Wang, Qiang, Niu, Gang, Ren, Wei, Wang, Ruobing, Chen, Xiaogang, Li, Xi, Ye, ZuoGuang, Xie, YaHong, Song, Sannian, Song, Zhitang. Phase Change Random Access Memory for Neuro-Inspired Computing. ADVANCED ELECTRONIC MATERIALSnull. 2021, 7(6): http://dx.doi.org/10.1002/aelm.202001241.
[2] Yuan, Zhenhui, Li, Xiaodan, Song, Sannian, Song, Zhitang, Zha, Jiawei, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. The enhanced performance of a Si-As-Se ovonic threshold switching selector. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2021, 9(38): 13376-13383, http://dx.doi.org/10.1039/d1tc02730a.
[3] Zheng, Long, Song, Wenxiong, Zhang, Sifan, Song, Zhitang, Zhu, Xiaoqin, Song, Sannian. Designing artificial carbon clusters using Ge2Sb2Te5/C superlattice-like structure for phase change applications. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 882: http://dx.doi.org/10.1016/j.jallcom.2021.160695.
[4] Yuan, Zhenhui, Li, Xiaodan, Wang, Hao, Xue, Yuan, Song, Sannian, Song, Zhitang, Zhu, Shuaishuai, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. Characteristic of As3Se4-based ovonic threshold switching device. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2021, 32(6): 7209-7214, http://dx.doi.org/10.1007/s10854-021-05429-0.
[5] Liang, Qi, Zhao, Junshi, Liu, Wanliang, Song, Zhitang, Song, Sannian, Wu, Liangcai. AlSc Alloy Doped Sb2Te as High Speed Phase-Change Material with Excellent Thermal Stability and Ultralow Density Change. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2021, 10(1): http://dx.doi.org/10.1149/2162-8777/abdc43.
[6] Wang, Ruobing, Song, Zhitang, Song, Wenxiong, Xin, Tianjiao, Lv, Shilong, Song, Sannian, Liu, Jun. Phase-change memory based on matched Ge-Te, Sb-Te, and In-Te octahedrons: Improved electrical performances and robust thermal stability. INFOMAT[J]. 2021, 3(9): 1008-1015, http://dx.doi.org/10.1002/inf2.12233.
[7] Li, Xiaodan, Yuan, Zhenhui, Lv, Shilong, Song, Sannian, Song, Zhitang. Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors. THIN SOLID FILMS[J]. 2021, 734: http://dx.doi.org/10.1016/j.tsf.2021.138837.
[8] Su, Xiao, Hua, Sicong, Xu, Zhehao, Song, Sannian, Song, Zhitang, Liu, Ruirui, Zhai, Jiwei. Ta-doped Ge5Sb95 phase change thin films for high speed and low power application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2021, 571: http://dx.doi.org/10.1016/j.jnoncrysol.2021.121069.
[9] Jiang, Yutong, Zhang, Kailiang, Hu, Kai, Zhang, Yujian, Liang, Ange, Song, Zhitang, Song, Sannian, Wang, Fang. Linearity improvement of HfOx-based memristor with multilayer structure. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 136: http://dx.doi.org/10.1016/j.mssp.2021.106131.
[10] Zhang, Zhenzhong, Wang, Fang, Hu, Kai, She, Yu, Song, Sannian, Song, Zhitang, Zhang, Kailiang. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM. MATERIALS[J]. 2021, 14(12): http://dx.doi.org/10.3390/ma14123330.
[11] Song, Zhitang, Wang, Ruobing, Xue, Yuan, Song, Sannian. The "gene" of reversible phase transformation of phase change materials: Octahedral motif. NANO RESEARCH. 2021, [12] Zhao, Junshi, Liang, Qi, Chen, Ying, Zhang, Sifan, Song, Zhitang, Song, Sannian, Ma, Zhongyuan, Wu, Liangcai. Rhenium doped Sb2Te phase change material with ultrahigh thermal stability and high speed. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 863: http://dx.doi.org/10.1016/j.jallcom.2020.158583.
[13] Hua, Sicong, Zhao, Zihan, Su, Xiao, Zhai, Jiwei, Song, Sannian, Song, Zhitang. Crystallization characteristic and structure of hafnium addition in germanium antimony thin films for phase change memory. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 864: http://dx.doi.org/10.1016/j.jallcom.2021.158893.
[14] Yuan Xue, Shuai Yan, Shilong Lv, Sannian Song, Zhitang Song. Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics. NANO-MICRO LETTERS[J]. 2021, 13(1): https://www.webofscience.com/wos/woscc/full-record/WOS:000607061500004.
[15] Xu, Yongkang, Song, Sannian, Yuan, Zhenhui, Zhao, Jin, Song, Zhitang. High Thermal Stability and Fast Speed Phase Change Memory by Optimizing GeTe Alloys with Ru Doping. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2021, 10(5): http://dx.doi.org/10.1149/2162-8777/abffad.
[16] Wang, Qiang, Niu, Gang, Ren, Wei, Wang, Ruobing, Chen, Xiaogang, Li, Xi, Ye, ZuoGuang, Xie, YaHong, Song, Sannian, Song, Zhitang. Phase Change Random Access Memory for Neuro-Inspired Computing. ADVANCED ELECTRONIC MATERIALSnull. 2021, 7(6): http://dx.doi.org/10.1002/aelm.202001241.
[17] Yuan, Zhenhui, Li, Xiaodan, Song, Sannian, Song, Zhitang, Zha, Jiawei, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. The enhanced performance of a Si-As-Se ovonic threshold switching selector. JOURNAL OF MATERIALS CHEMISTRY C[J]. 2021, 9(38): 13376-13383, http://dx.doi.org/10.1039/d1tc02730a.
[18] Zheng, Long, Song, Wenxiong, Zhang, Sifan, Song, Zhitang, Zhu, Xiaoqin, Song, Sannian. Designing artificial carbon clusters using Ge2Sb2Te5/C superlattice-like structure for phase change applications. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2021, 882: http://dx.doi.org/10.1016/j.jallcom.2021.160695.
[19] Yuan, Zhenhui, Li, Xiaodan, Wang, Hao, Xue, Yuan, Song, Sannian, Song, Zhitang, Zhu, Shuaishuai, Han, Gang, Yang, Bingjun, Jimbo, Takehito, Suu, Koukou. Characteristic of As3Se4-based ovonic threshold switching device. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2021, 32(6): 7209-7214, http://dx.doi.org/10.1007/s10854-021-05429-0.
[20] Liang, Qi, Zhao, Junshi, Liu, Wanliang, Song, Zhitang, Song, Sannian, Wu, Liangcai. AlSc Alloy Doped Sb2Te as High Speed Phase-Change Material with Excellent Thermal Stability and Ultralow Density Change. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY[J]. 2021, 10(1): http://dx.doi.org/10.1149/2162-8777/abdc43.
[21] Wang, Ruobing, Song, Zhitang, Song, Wenxiong, Xin, Tianjiao, Lv, Shilong, Song, Sannian, Liu, Jun. Phase-change memory based on matched Ge-Te, Sb-Te, and In-Te octahedrons: Improved electrical performances and robust thermal stability. INFOMAT[J]. 2021, 3(9): 1008-1015, http://dx.doi.org/10.1002/inf2.12233.
[22] Li, Xiaodan, Yuan, Zhenhui, Lv, Shilong, Song, Sannian, Song, Zhitang. Extended endurance performance and reduced threshold voltage by doping Si in GeSe-based ovonic threshold switching selectors. THIN SOLID FILMS[J]. 2021, 734: http://dx.doi.org/10.1016/j.tsf.2021.138837.
[23] Su, Xiao, Hua, Sicong, Xu, Zhehao, Song, Sannian, Song, Zhitang, Liu, Ruirui, Zhai, Jiwei. Ta-doped Ge5Sb95 phase change thin films for high speed and low power application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2021, 571: http://dx.doi.org/10.1016/j.jnoncrysol.2021.121069.
[24] Jiang, Yutong, Zhang, Kailiang, Hu, Kai, Zhang, Yujian, Liang, Ange, Song, Zhitang, Song, Sannian, Wang, Fang. Linearity improvement of HfOx-based memristor with multilayer structure. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING[J]. 2021, 136: http://dx.doi.org/10.1016/j.mssp.2021.106131.
[25] Zhang, Zhenzhong, Wang, Fang, Hu, Kai, She, Yu, Song, Sannian, Song, Zhitang, Zhang, Kailiang. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM. MATERIALS[J]. 2021, 14(12): http://dx.doi.org/10.3390/ma14123330.
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[153] Chen, Liangliang, Song, Sannian, Song, Zhitang, Li, Le, Zhang, Zhonghua, Zheng, Yonghui, Zheng, Qianqian, Zhang, Xin, Zhu, Xiuwei, Shao, Hehong. Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application. APPLIED SURFACE SCIENCE[J]. 2015, 357: 603-607, http://dx.doi.org/10.1016/j.apsusc.2015.08.215.
[154] Wang, Quan, Song, Sannian, Song, Zhitang, Miao, Hongyan, Ding, Yuqiang. Theoretical research on structures of aminopyrimidine germanium(II) precursors and their application in film formation. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2015, 85(6): 1522-1527, https://www.webofscience.com/wos/woscc/full-record/WOS:000358219500027.
[155] Zhu, Yueqin, Zhang, Zhonghua, Song, Sannian, Xie, Huaqing, Song, Zhitang, Li, Xiaoyun, Shen, Lanlan, Li, Le, Wu, Liangcai, Liu, Bo. Ni-doped GST materials for high speed phase change memory applications. MATERIALS RESEARCH BULLETIN[J]. 2015, 64: 333-336, http://dx.doi.org/10.1016/j.materresbull.2015.01.016.
[156] Zhang, Ling, Song, Sannian, Xi, Wei, Li, Le, He, Yan, Lin, He, Song, Zhitang. Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS[J]. 2015, 83: 52-57, http://dx.doi.org/10.1016/j.jpcs.2015.03.019.
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[158] Li, Le, Song, Sannian, Zhang, Zhonghua, Song, Zhitang, Cheng, Yan, Lv, Shilong, Wu, Liangcai, Liu, Bo, Feng, Songlin. Investigation of Cr-0.06(Sb4Te)(0.94) alloy for high-speed and high-data-retention phase change random access memory applications. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2015, 120(2): 537-542, https://www.webofscience.com/wos/woscc/full-record/WOS:000358236200018.
[159] Xia, Yangyang, Liu, Bo, Wang, Qing, Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Yao, Dongning, Xi, Wei, Guo, Xiaohui, Feng, Songlin. Study on the phase change material Cr-doped Sb3Te1 for application in phase change memory. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2015, 422: 46-50, http://dx.doi.org/10.1016/j.jnoncrysol.2015.05.013.
[160] Wang, Q, Song, S N, Song, Z T, Xu, C Y, Wang, D W, Ding, Y Q. Synthesis and thermal properties of the pyrazolato germanium complexes. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS[J]. 2015, 17(3-4): 489-493, https://www.webofscience.com/wos/woscc/full-record/WOS:000354075200036.
[161] Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wang, Guoxiang, Dai, Shixun. Study on phase change properties of binary GaSb doped Sb-Se film. THIN SOLID FILMS[J]. 2015, 589: 215-220, http://dx.doi.org/10.1016/j.tsf.2015.05.017.
[162] Li, Le, Song, Sannian, Zhang, Zhonghua, Zhu, Yueqing, Song, Zhitang, Cheng, Yan, Lv, Shilong, Liu, Bo, Chen, Liangliang. Thickness dependent nano-crystallization in Ti0.43Sb2Te3 films and its effect on devices. THIN SOLID FILMS[J]. 2015, 590: 13-16, http://dx.doi.org/10.1016/j.tsf.2015.07.056.
[163] Zhu YueQin, Zhang ZhongHua, Song SanNian, Xie HuaQing, Song ZhiTang, Shen LanLan, Li Le, Wu LiangCai, Liu Bo. Characterization of Ge Doping on Sb2Te3 for High-Speed Phase Change Memory Application. CHINESE PHYSICS LETTERS[J]. 2015, 32(7): http://lib.cqvip.com/Qikan/Article/Detail?id=665867328.
[164] Wang, Qing, Liu, Bo, Xia, Yangyang, Zhang, Zhonghua, Ji, Xinglong, Song, Sannian, Song, Zhitang, Xi, Wei, Yao, Dongning, Lv, Shilong, Feng, Songlin. CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS[J]. 2015, 26(6): 4138-4143, https://www.webofscience.com/wos/woscc/full-record/WOS:000354404800100.
[165] Chen, Liangliang, Song, Sannian, Song, Zhitang, Li, Le, Zhang, Zhonghua, Zheng, Yonghui, Zheng, Qianqian, Zhang, Xin, Zhu, Xiuwei, Shao, Hehong. Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application. APPLIED SURFACE SCIENCE[J]. 2015, 357: 603-607, http://dx.doi.org/10.1016/j.apsusc.2015.08.215.
[166] Wang, Quan, Song, Sannian, Song, Zhitang, Miao, Hongyan, Ding, Yuqiang. Theoretical research on structures of aminopyrimidine germanium(II) precursors and their application in film formation. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2015, 85(6): 1522-1527, https://www.webofscience.com/wos/woscc/full-record/WOS:000358219500027.
[167] Wang, Quan, Song, Sannian, Song, Zhitang, Wang, Dawei, Ding, Yuqiang. Synthesis and thermal properties of aminopyrimidine Ge(II) precursors for CVD/ALD technology. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2014, 84(10): 2027-2030, https://www.webofscience.com/wos/woscc/full-record/WOS:000345103200028.
[168] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Peng, Cheng, Zhang, Ling, Cao, Duanchao, Guo, Xiaohui, Yin, Weijun, Wu, Liangcai, Liu, Bo. Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas. MICROELECTRONIC ENGINEERING[J]. 2014, 115: 51-54, http://dx.doi.org/10.1016/j.mee.2013.10.016.
[169] Lu, Yegang, Song, Sannian, Shen, Xiang, Wang, Guoxiang, Wu, Liangcai, Song, Zhitang, Liu, Bo, Dai, Shixun. Phase change characteristics of Sb-rich Ga-Sb-Se materials. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2014, 586: 669-673, https://www.webofscience.com/wos/woscc/full-record/WOS:000329856800107.
[170] Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wu, Liangcai, Wang, Guoxiang, Dai, Shixun. Low-power phase change memory with multilayer TiN/W nanostructure electrode. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2014, 117(4): 1933-1940, https://www.webofscience.com/wos/woscc/full-record/WOS:000345293200036.
[171] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Zhu, Min, Li, Xiaoyun, Zhu, Yueqin, Guo, Xiaohui, Yin, Weijun, Wu, Liangcai, Liu, Bo, Feng, Songlin, Zhou, Dong. Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas. APPLIED SURFACE SCIENCE[J]. 2014, 311(8): 68-73, http://dx.doi.org/10.1016/j.apsusc.2014.05.002.
[172] Wang, Quan, Song, Sannian, Song, Zhitang, Wang, Dawei, Ding, Yuqiang. Synthesis and thermal properties of aminopyrimidine Ge(II) precursors for CVD/ALD technology. RUSSIAN JOURNAL OF GENERAL CHEMISTRY[J]. 2014, 84(10): 2027-2030, https://www.webofscience.com/wos/woscc/full-record/WOS:000345103200028.
[173] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Peng, Cheng, Zhang, Ling, Cao, Duanchao, Guo, Xiaohui, Yin, Weijun, Wu, Liangcai, Liu, Bo. Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas. MICROELECTRONIC ENGINEERING[J]. 2014, 115: 51-54, http://dx.doi.org/10.1016/j.mee.2013.10.016.
[174] Lu, Yegang, Song, Sannian, Shen, Xiang, Wang, Guoxiang, Wu, Liangcai, Song, Zhitang, Liu, Bo, Dai, Shixun. Phase change characteristics of Sb-rich Ga-Sb-Se materials. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2014, 586: 669-673, https://www.webofscience.com/wos/woscc/full-record/WOS:000329856800107.
[175] Lu, Yegang, Song, Sannian, Shen, Xiang, Song, Zhitang, Wu, Liangcai, Wang, Guoxiang, Dai, Shixun. Low-power phase change memory with multilayer TiN/W nanostructure electrode. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2014, 117(4): 1933-1940, https://www.webofscience.com/wos/woscc/full-record/WOS:000345293200036.
[176] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Zhu, Min, Li, Xiaoyun, Zhu, Yueqin, Guo, Xiaohui, Yin, Weijun, Wu, Liangcai, Liu, Bo, Feng, Songlin, Zhou, Dong. Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas. APPLIED SURFACE SCIENCE[J]. 2014, 311(8): 68-73, http://dx.doi.org/10.1016/j.apsusc.2014.05.002.
[177] Sannian Song. Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas. Microelectronic Engineering. 2013, [178] Gu, Yifeng, Song, Sannian, Song, Zhitang, Bai, Suyuan, Cheng, Yan, Zhang, Zhonghua, Liu, Bo, Feng, Songlin. Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory. APPLIED PHYSICS LETTERS[J]. 2013, 102(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000316501200073.
[179] 刘旭焱, 宋三年, 刘卫丽, 宋志棠. 三维相变存储阵列驱动二极管的制备研究. 功能材料与器件学报[J]. 2013, 19(6): 270-274, [180] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Rao, Feng, Wu, Liangcai, Liu, Bo, Chen, Bomy, Lu, Yegang. Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 103(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000325488500048.
[181] Lu, Yegang, Zhang, Zhonghua, Song, Sannian, Shen, Xiang, Wang, Guoxiang, Cheng, Limin, Dai, Shixun, Song, Zhitang. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. APPLIED PHYSICS LETTERS[J]. 2013, 102(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000320962400028.
[182] Hu, Yifeng, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Al19Sb54Se27 material for high stability and high-speed phase-change memory applications. SCRIPTA MATERIALIA[J]. 2013, 69(1): 61-64, https://www.webofscience.com/wos/woscc/full-record/WOS:000319545100016.
[183] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Gu, Yifeng, Chen, Bomy. Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material. APPLIED PHYSICS LETTERS[J]. 2013, 102(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000321145200049.
[184] Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei, Liang, Guangfei, Wu, Yiqun. Phase-change behaviors of Sb80Te20/SbSe nanocomposite multilayer films. SCRIPTA MATERIALIA[J]. 2013, 68(7): 522-525, https://www.webofscience.com/wos/woscc/full-record/WOS:000314739900021.
[185] Zhang, Zhonghua, Peng, Cheng, Song, Sannian, Song, Zhitang, Cheng, Yan, Ren, Kun, Li, Xiaoyun, Rao, Feng, Liu, Bo, Feng, Songlin. Characterization of Cu doping on GeTe for phase change memory application. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000329173200064.
[186] Sannian Song. Performance improvement of phase-change memory cell with atomic layer deposition titanium dioxide buffer layer. Nanoscale Research Letters. 2013, [187] Hu, Yifeng, Feng, Xiaoyi, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 103(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000325779700045.
[188] Hu, Yifeng, Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2013, 551: 551-555, https://www.webofscience.com/wos/woscc/full-record/WOS:000313651600094.
[189] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Gu, Yifeng, Wu, Liangcai, Liu, Bo, Feng, Songlin. Study on GeGaSbTe film for long data retention phase change memory application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2013, 381: 54-57, http://dx.doi.org/10.1016/j.jnoncrysol.2013.09.017.
[190] Sannian Song. Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas. Microelectronic Engineering. 2013, [191] Gu, Yifeng, Song, Sannian, Song, Zhitang, Bai, Suyuan, Cheng, Yan, Zhang, Zhonghua, Liu, Bo, Feng, Songlin. Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory. APPLIED PHYSICS LETTERS[J]. 2013, 102(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000316501200073.
[192] 刘旭焱, 宋三年, 刘卫丽, 宋志棠. 三维相变存储阵列驱动二极管的制备研究. 功能材料与器件学报[J]. 2013, 19(6): 270-274, [193] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Rao, Feng, Wu, Liangcai, Liu, Bo, Chen, Bomy, Lu, Yegang. Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 103(14): https://www.webofscience.com/wos/woscc/full-record/WOS:000325488500048.
[194] Lu, Yegang, Zhang, Zhonghua, Song, Sannian, Shen, Xiang, Wang, Guoxiang, Cheng, Limin, Dai, Shixun, Song, Zhitang. Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory. APPLIED PHYSICS LETTERS[J]. 2013, 102(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000320962400028.
[195] Hu, Yifeng, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Al19Sb54Se27 material for high stability and high-speed phase-change memory applications. SCRIPTA MATERIALIA[J]. 2013, 69(1): 61-64, https://www.webofscience.com/wos/woscc/full-record/WOS:000319545100016.
[196] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Gu, Yifeng, Chen, Bomy. Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material. APPLIED PHYSICS LETTERS[J]. 2013, 102(25): https://www.webofscience.com/wos/woscc/full-record/WOS:000321145200049.
[197] Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei, Liang, Guangfei, Wu, Yiqun. Phase-change behaviors of Sb80Te20/SbSe nanocomposite multilayer films. SCRIPTA MATERIALIA[J]. 2013, 68(7): 522-525, https://www.webofscience.com/wos/woscc/full-record/WOS:000314739900021.
[198] Zhang, Zhonghua, Peng, Cheng, Song, Sannian, Song, Zhitang, Cheng, Yan, Ren, Kun, Li, Xiaoyun, Rao, Feng, Liu, Bo, Feng, Songlin. Characterization of Cu doping on GeTe for phase change memory application. JOURNAL OF APPLIED PHYSICS[J]. 2013, 114(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000329173200064.
[199] Sannian Song. Performance improvement of phase-change memory cell with atomic layer deposition titanium dioxide buffer layer. Nanoscale Research Letters. 2013, [200] Hu, Yifeng, Feng, Xiaoyi, Li, Simian, Lai, Tianshu, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Superlattice-like Sb50Se50/Ga30Sb70 thin films for high-speed and high density phase change memory application. APPLIED PHYSICS LETTERS[J]. 2013, 103(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000325779700045.
[201] Hu, Yifeng, Sun, Mingcheng, Song, Sannian, Song, Zhitang, Zhai, Jiwei. Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2013, 551: 551-555, https://www.webofscience.com/wos/woscc/full-record/WOS:000313651600094.
[202] Zhang, Zhonghua, Song, Sannian, Song, Zhitang, Cheng, Yan, Gu, Yifeng, Wu, Liangcai, Liu, Bo, Feng, Songlin. Study on GeGaSbTe film for long data retention phase change memory application. JOURNAL OF NON-CRYSTALLINE SOLIDS[J]. 2013, 381: 54-57, http://dx.doi.org/10.1016/j.jnoncrysol.2013.09.017.
[203] Gu, Yifeng, Song, Sannian, Song, Zhitang, Cheng, Yan, Du, Xiaofeng, Liu, Bo, Feng, Songlin. SixSb2Te materials with stable phase for phase change random access memory applications. JOURNAL OF APPLIED PHYSICS[J]. 2012, 111(5): http://ir.sim.ac.cn/handle/331004/115546.
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[205] Zhu, Min, Wu, Liangcai, Song, Zhitang, Rao, Feng, Cai, Daolin, Peng, Cheng, Zhou, Xilin, Ren, Kun, Song, Sannian, Liu, Bo, Feng, Songlin. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. APPLIED PHYSICS LETTERS[J]. 2012, 100(12): http://ir.sim.ac.cn/handle/331004/115549.
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[209] Zhu, Min, Wu, Liangcai, Song, Zhitang, Rao, Feng, Cai, Daolin, Peng, Cheng, Zhou, Xilin, Ren, Kun, Song, Sannian, Liu, Bo, Feng, Songlin. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. APPLIED PHYSICS LETTERS[J]. 2012, 100(12): http://ir.sim.ac.cn/handle/331004/115549.
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[211] Lu, Yegang, Song, Sannian, Song, Zhitang, Ren, Kun, Liu, Bo, Feng, Songlin. Sb2Te3-HfO2 composite films for low-power phase change memory application. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING[J]. 2011, 105(1): 183-188, http://www.irgrid.ac.cn/handle/1471x/390967.
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科研活动

   
科研项目
( 1 ) 钛锑碲相变材料的相变机理与微缩特性研究, 负责人, 国家任务, 2014-01--2017-12
( 2 ) 半导体存储器制备与测试平台, 参与, 地方任务, 2013-12--2015-11
( 3 ) 钛锑碲相变材料的相变机理与尺寸效应研究, 负责人, 地方任务, 2013-07--2014-06
( 4 ) 高密度交叉阵列结构的新型存储器件与集成, 参与, 国家任务, 2017-07--2022-06
( 5 ) 高密度阻变存储器的材料器件与集成技术, 负责人, 国家任务, 2018-05--2022-04
( 6 ) 上海市半导体存储器制备与测试专业技术服务平台, 参与, 其他任务, 2017-04--2020-03
( 7 ) 上海市储存器纳米制造重点实验室, 参与, 其他任务, 2018-04--2021-04
( 8 ) 大容量三维相变存储器纳米存储阵列制备系统, 参与, 中国科学院计划, 2018-01--2019-12
( 9 ) 相变材料与阈值转变开关材料优选及其阈值转变机理研究, 负责人, 国家任务, 2019-01--2022-12
( 10 ) 新一代高速低功耗嵌入式相变存储器芯片, 负责人, 地方任务, 2020-10--2022-09
( 11 ) 易于与碳晶体管集成的新型存储器件关键基础研究, 负责人, 国家任务, 2021-11--2026-11
( 12 ) 基于相变存储的模拟存内计算芯片, 参与, 国家任务, 2022-01--2025-12

指导学生

已指导学生

沈兰兰  硕士研究生  085209-集成电路工程  

李林  硕士研究生  085209-集成电路工程  

许永康  硕士研究生  085209-集成电路工程  

现指导学生

袁祯晖  博士研究生  080903-微电子学与固体电子学  

倪圣兰  博士研究生  080903-微电子学与固体电子学  

吴青玉  硕士研究生  080903-微电子学与固体电子学  

李小丹  博士研究生  080903-微电子学与固体电子学  

陈致志  硕士研究生  085400-电子信息