基本信息
杨身园  女  硕导  中国科学院半导体研究所
电子邮件: syyang@semi.ac.cn
通信地址: 北京市海淀区清华东路甲35号2号楼501
邮政编码: 100083

招生信息

   
招生专业
070205-凝聚态物理
085400-电子信息
招生方向
半导体材料和纳米体系的第一性原理计算,半导体表面和界面

教育背景

2006-03--2008-08   美国田纳西大学,橡树岭国家实验室   访问学者
2003-09--2008-09   中国科学院物理研究所   博士
1999-09--2003-07   北京师范大学物理学系   学士

工作经历

   
工作简历
2011-09~现在, 中国科学院半导体研究所, 副研究员
2008-08~2011-08,美国劳伦斯伯克利国家实验室, 博士后
2006-03~2008-08,美国田纳西大学,橡树岭国家实验室, 访问学者
2003-09~2008-09,中国科学院物理研究所, 博士
1999-09~2003-07,北京师范大学物理学系, 学士

教授课程

半导体功能材料设计
半导体信息材料设计

专利与奖励

   
奖励信息
(1) 2019中国新锐科技人物突出成就奖, 其他, 2019

出版信息

   
发表论文
(1) Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices, Physical Chemistry Chemical Physics, 2022, 通讯作者
(2) Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer, Nano Letters, 2022, 通讯作者
(3) First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices, Chinese Physics B, 2022, 通讯作者
(4) Atomic-Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD, Small, 2022, 通讯作者
(5) Direct growth of wafer-scale highly oriented graphene on sapphire, SCIENCE ADVANCES, 2021, 通讯作者
(6) Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes, ADVANCED SCIENCE, 2020, 第 4 作者
(7) Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes, JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2020, 第 5 作者
(8) Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering, APPLIED SURFACE SCIENCE, 2020, 第 2 作者
(9) A Linear Relationship between the Charge Transfer Amount and Level Alignment in Molecule/Two-Dimensional Adsorption Systems, ACS OMEGA, 2020, 通讯作者
(10) Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes, ADVANCED FUNCTIONAL MATERIALS, 2020, 第 6 作者
(11) High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors, NANOSCALE, 2020, 第 3 作者
(12) Large Band Edge Tunability in Colloidal Nanoplatelets, NANO LETTERS, 2019, 第 3 作者
(13) Atomic mechanism of strong interactions at the graphene/sapphire interface, Nature Communications, 2019, 第 4 作者
(14) Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene, ADVANCED MATERIALS, 2019, 第 4 作者
(15) Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate, APPLIED PHYSICS LETTERS, 2019, 通讯作者
(16) High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer, ADVANCED MATERIALS, 2018, 其他(合作组作者)
(17) Antiferromagnetic ferromagnetic transition in zigzag graphene nanoribbons induced by substitutional doping, Antiferromagnetic ferromagnetic transition in zigzag graphene nanoribbons induced by substitutional doping, CHINESE PHYSICS B, 2018, 通讯作者
(18) The effect of Bi composition on the electrical properties of InP1-xBix (vol 60, 047022, 2017), SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2018, 通讯作者
(19) Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires, CHINESE PHYSICS B, 2017, 通讯作者
(20) The effect of Bi composition on the electrical properties of InP1-xBix, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2017, 通讯作者
(21) N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation, CHINESE PHYSICS LETTERS, 2015, 通讯作者
(22) Structural and Electronic Properties of Zigzag Graphene Nanoribbons on Si(001) Substrates, Structural and Electronic Properties of Zigzag Graphene Nanoribbons on Si(001) Substrates, 中国物理快报:英文版, 2015, 
(23) Tuning Semiconductor Band Edge Energies for Solar Photocatalysis via Surface Ligand Passivation, NANO LETTERS, 2012, 第 1 作者
(24) Tuning the electronic structure of II-VI and III-V semiconductors with biaxial strain, Appl. Phys. Lett., 2011, 第 1 作者
(25) Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures, NANO LETTERS, 2010, 第 1 作者
(26) Interaction between hydrogen molecules and metallofullerenes, JOURNAL OF CHEMICAL PHYSICS, 2009, 第 2 作者
(27) Electron transfer and localization in endohedral metallofullerenes: Ab initio density functional theory calculations, PHYSICAL REVIEW B, 2008, 通讯作者
(28) Generic guiding principle for the prediction of metal-induced reconstructions of compound semiconductor surfaces, PHYSICAL REVIEW B, 2008, 通讯作者
(29) Energetics and kinetics of Ti clustering on neutral and charged C-60 surfaces, JOURNAL OF CHEMICAL PHYSICS, 2008, 通讯作者
(30) Calcium as a superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage, Phys. Rev. Lett., 2008, 第 1 作者
(31) Charged fullerenes as high-capacity hydrogen storage media, NANO LETTERS, 2007, 第 2 作者

科研活动

   
科研项目
( 1 ) 石墨烯纳米带与衬底相互作用的第一性原理研究, 负责人, 国家任务, 2013-01--2015-12
( 2 ) 分立量子点可控高效纳米发光器件机理及制备基础研究, 参与, 国家任务, 2013-01--2017-12
( 3 ) 2.8-4.0微米室温高性能半导体激光器材料和器件制备研究, 参与, 国家任务, 2014-01--2018-08
( 4 ) II-VI族半导体芯/壳纳米线异质结中的应变与掺杂, 负责人, 国家任务, 2015-01--2018-12
( 5 ) 二维电子材料及纳米量子器件的研究和原位分析仪器, 参与, 国家任务, 2015-01--2020-12
( 6 ) 基于遂穿及混合机制的超陡摆幅新原理器件技术, 负责人, 国家任务, 2019-08--2023-07
( 7 ) 远程范德瓦尔斯外延机制的理论研究, 负责人, 国家任务, 2021-01--2024-12
( 8 ) 石墨烯晶圆衬底上高品质氮化物的制备与生长机制研究, 参与, 国家任务, 2020-06--2025-05
参与会议
(1)石墨烯 /蓝宝石界面结构的第一性原理研究    2019年全国半导体物理学术会议   2019-07-09
(2)基于石墨烯的范德华外延生长应力释放机制研究   中国物理学会2018秋季学术会议   2018-09-13
(3)First-Principles Study on Nonlinear Variation of Electron Concentration in InPBi Materials   2016-07-24
(4)InPBi合金中电子浓度非线性变化的第一性原理研究   中国物理学会2015年秋季学术会议   杨身园,魏冠男,骆军委,李树深   2015-09-10
(5)Tuning the electronic structure of II-VI semiconductors and nanostructures for energy applications   Shenyuan Yang   2011-03-24
(6)Tuning semiconductor band edge energies via surface ligand passivation   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2011-03-23
(7)Strain-induced band gap modification in coherent core/shell nanostructures   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-10-01
(8)Charge separation and electronic level alignment in multicomponent CdSe/CdTe nanostructures from first principles   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-04-09
(9)Electronic level alignment in multicomponent CdSe/CdTe nanostructures from first principles   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-03-15