070205-凝聚态物理

半导体材料和纳米体系的第一性原理计算，半导体表面和界面

2006-03--2008-08   美国田纳西大学，橡树岭国家实验室   访问学者
2003-09--2008-09   中国科学院物理研究所   博士
1999-09--2003-07   北京师范大学物理学系   学士

   

2011-09~现在, 中国科学院半导体研究所, 副研究员
2008-08~2011-08,美国劳伦斯伯克利国家实验室, 博士后

半导体功能材料设计
半导体信息材料设计

   

（1） 2019中国新锐科技人物突出成就奖, 其他, 2019

[1] 宋顺, 杨身园, 秦璐, 宫箭. 一种环形栅场效应晶体管. CN: CN118102733A, 2024-05-28.
[2] 杨身园, 宋顺, 宫箭. 整流器. CN: CN113555417B, 2024-06-07.

   

[1] Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei. Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration. ADVANCED SCIENCE[J]. 2024, 第 6 作者  通讯作者  11(20): 2305576-n/a, https://doaj.org/article/cc06096a042946aea09b96c7aeafa2e8.
[2] Shun Song, Juan Lyu, Lu Qin, Zhi Wang, Jian Gong, Shenyuan Yang. Lateral graphene/MoS2 heterostructures for steep-slope Dirac-source field-effect transistors. Physical Review B[J]. 2024, 第 6 作者  通讯作者  110(null): 125407, 
[3] 侯锐, 杨身园. A first-principles study on remote van der Waals epitaxy through a graphene monolayer on semiconductor substrates. 中国物理B:英文版[J]. 2023, 第 2 作者  通讯作者  32(6): 466-475, http://lib.cqvip.com/Qikan/Article/Detail?id=7110020089.
[4] Lulu Wang, 杨身园, Fan Zhou, Yaqi Gao, Yiwei Duo, Renfeng Chen, jiankun yang, yan jianchang, junxi wang, jinmin li, Yanfeng Zhang, Tongbo Wei. Wafer-scale transferrable GaN enabled by hexagonal boron nitride for flexible light-emitting diode. Small[J]. 2023, 第 2 作者20(null): 2306132, 
[5] Zhetong Liu, Bingyao Liu, Zhaolong Chen, Shenyuan Yang, Zhiqiang Liu, Tongbo Wei, Peng Gao, Zhongfan Liu. Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review. 国家科学进展(英文)[J]. 2023, 第 4 作者2(4): 86-102, http://lib.cqvip.com/Qikan/Article/Detail?id=7110108361.
[6] Wang, Lulu, Yang, Shenyuan, Gao, Yaqi, Yang, Jiankun, Duo, Yiwei, Song, Shun, Yan, Jianchang, Wang, Junxi, Li, Jinmin, Wei, Tongbo. Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES[J]. 2023, 第 2 作者15(19): 23501-23511, http://dx.doi.org/10.1021/acsami.3c03438.
[7] Shun Song, Jian Gong, Xiangwei Jiang, Shenyuan Yang. Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices. Physical Chemistry Chemical Physics[J]. 2022, 第 4 作者  通讯作者  24: 2265-2274, 
[8] Liu, Bingyao, Chen, Qi, Chen, Zhaolong, yang shenyuan, Shan, Jingyuan, Zhetong Liu, Yin, Yue, Ren, Fang, Zhang, Shuo, Wang, Rong, Wu, Mei, hou rui, wei tongbo, 王军喜, Jingyu Sun, li jinmin, Zhongfan Liu, 刘志强, Gao Peng. Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer. Nano Letters[J]. 2022, 第 4 作者  通讯作者  22: 3364-3371, 
[9] Huihui He, Shenyuan Yang. First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices. Chinese Physics B[J]. 2022, 第 2 作者  通讯作者  31: 017104, 
[10] Chang, Hongliang, Liu, Zhetong, Yang, Shenyuan, Gao, Yaqi, Shan, Jingyuan, Liu, Bingyao, Sun, Jingyu, Chen, Zhaolong, Yan, Jianchang, Liu, Zhiqiang, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Wei, Tongbo. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. LIGHT-SCIENCE & APPLICATIONS[J]. 2022, 第 3 作者11(1): 808-819, http://dx.doi.org/10.1038/s41377-022-00756-1.
[11] Song, Shun, Gong, Jian, Wen, Hongyu, Yang, Shenyuan. Improving performance of monolayer arsenene tunnel field-effect transistors by defects. NANOSCALE ADVANCES[J]. 2022, 第 4 作者  通讯作者  4(14): 3023-3032, http://dx.doi.org/10.1039/d2na00093h.
[12] Chen, Zhaolong, Xie, Chunyu, Wang, Wendong, Zhao, Jinpei, Liu, Bingyao, Shan, Jingyuan, Wang, Xueyan, Hong, Min, Lin, Li, Huang, Li, Lin, Xiao, Yang, Shenyuan, Gao, Xuan, Zhang, Yanfeng, Gao, Peng, Novoselov, Kostya S, Sun, Jingyu, Liu, Zhongfan. Direct growth of wafer-scale highly oriented graphene on sapphire. SCIENCE ADVANCES[J]. 2021, 第 12 作者  通讯作者  7(47): 
[13] Chang, Hongliang, Chen, Zhaolong, Liu, Bingyao, Yang, Shenyuan, Liang, Dongdong, Dou, Zhipeng, Zhang, Yonghui, Yan, Jianchang, Liu, Zhiqiang, Zhang, Zihui, Wang, Junxi, Li, Jinmin, Liu, Zhongfan, Gao, Peng, Wei, Tongbo. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. ADVANCED SCIENCE[J]. 2020, 第 4 作者7(15): https://doaj.org/article/32f1419021b4404d8ab8f34cfc1135ec.
[14] Zhang, Xiang, Chen, Zhaolong, Chang, Hongliang, Yan, Jianchang, Yang, Shenyuan, Wang, Junxi, Gao, Peng, Wei, Tongbo. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS[J]. 2020, 第 5 作者160(160): https://www.webofscience.com/wos/woscc/full-record/WOS:000546499200071.
[15] Wang, Yunyu, Yang, Shenyuan, Chang, Hongliang, Li, Weijiang, Chen, Xiufang, Hou, Rui, Yan, Jianchang, Yi, Xiaoyan, Wang, Junxi, Wei, Tongbo. Flexible graphene-assisted van der Waals epitaxy growth of crack -free AlN epilayer on SiC by lattice engineering. APPLIED SURFACE SCIENCE[J]. 2020, 第 2 作者520: http://dx.doi.org/10.1016/j.apsusc.2020.146358.
[16] Rui Hou, Yang Xia, Shenyuan Yang. A Linear Relationship between the Charge Transfer Amount and Level Alignment in Molecule/Two-Dimensional Adsorption Systems. ACS OMEGA[J]. 2020, 第 3 作者  通讯作者  5(41): 26748-26754, https://www.webofscience.com/wos/woscc/full-record/WOS:000584420100045.
[17] Chen, Zhaolong, Chang, Hongliang, Cheng, Ting, Wei, Tongbo, Wang, Ruoyu, Yang, Shenyuan, Dou, Zhipeng, Liu, Bingyao, Zhang, Shishu, Xie, Yadian, Liu, Zhiqiang, Zhang, Yanfeng, Li, Jinmin, Ding, Feng, Gao, Peng, Liu, Zhongfan. Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes. ADVANCED FUNCTIONAL MATERIALS[J]. 2020, 第 6 作者30(31): https://www.webofscience.com/wos/woscc/full-record/WOS:000539575700001.
[18] Fan, ZhiQiang, Zhang, ZhenHua, Yang, ShenYuan. High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors. NANOSCALE[J]. 2020, 第 3 作者12(42): 21750-21756, https://www.webofscience.com/wos/woscc/full-record/WOS:000585977000023.
[19] Zhou, Qunfei, Cho, Yeongsu, Yang, Shenyuan, Weiss, Emily A, Berkelbach, Timothy C, Darancet, Pierre. Large Band Edge Tunability in Colloidal Nanoplatelets. NANO LETTERS[J]. 2019, 第 3 作者19(10): 7124-7129, https://www.webofscience.com/wos/woscc/full-record/WOS:000490353500053.
[20] Zhipeng Dou, Zhaolong Chen, Ning Li, Shenyuan Yang, Zhiwei Yu, Yuanwei Sun, Yuehui Li, Bingyao Liu, Qiang Luo, Tianbao Ma, Lei Liao, Zhongfan Liu, Peng Gao. Atomic mechanism of strong interactions at the graphene/sapphire interface. NATURE COMMUNICATIONS[J]. 2019, 第 4 作者  通讯作者  10(1): 1-5, https://doaj.org/article/457c6346041548558c07330cc825fb2e.
[21] Chen, Zhaolong, Liu, Zhiqiang, Wei, Tongbo, Yang, Shenyuan, Dou, Zhipeng, Wang, Yunyu, Ci, Haina, Chang, Hongliang, Qi, Yue, Yan, Jianchang, Wang, Junxi, Zhang, Yanfeng, Gao, Peng, Li, Jinmin, Liu, Zhongfan. Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. ADVANCED MATERIALS[J]. 2019, 第 4 作者31(23): 
[22] Chang, Hongliang, Chen, Zhaolong, Li, Weijiang, Yan, Jianchang, Hou, Rui, Yang, Shenyuan, Liu, Zhiqiang, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Gao, Peng, Wei, Tongbo. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. APPLIED PHYSICS LETTERS[J]. 2019, 第 6 作者  通讯作者  114(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000460820600009.
[23] Chen, Zhaolong, Zhang, Xiang, Dou, Zhipeng, Wei, Tongbo, Liu, Zhiqiang, Qi, Yue, Ci, Haina, Wang, Yunyu, Li, Yang, Chang, Hongliang, Yan, Jianchang, Yang, Shenyuan, Zhang, Yanfeng, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. ADVANCED MATERIALS[J]. 2018, 第 12 作者30(30): https://www.webofscience.com/wos/woscc/full-record/WOS:000439737700021.
[24] ShenyuanYang, JingLi, ShuShenLi. Antiferromagnetic–ferromagnetic transition in zigzag graphene nanoribbons induced by substitutional doping. Chinese Physics B[J]. 2018, 第 1 作者  通讯作者  27(11): 117102-117102, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/27/11/117102.
[25] Wei, GuanNan, Dai, Xing, Feng, Qi, Luo, WenGang, Li, YiYang, Wang, Kai, Zhang, Liyao, Pan, Wenwu, Wang, ShuMin, Yang, ShenYuan, Wang, KaiYou. The effect of Bi composition on the electrical properties of InP1-xBix (vol 60, 047022, 2017). SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY. 2018, 第 10 作者  通讯作者  61(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000428503800009.
[26] LinlinXiang, ShenyuanYang. Uniaxial strain-modulated electronic structures of CdX (X=S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires. Chinese Physics B[J]. 2017, 第 2 作者  通讯作者  26(8): 87103-087103, https://cpb.iphy.ac.cn/EN/10.1088/1674-1056/26/8/087103.
[27] Wei, GuanNan, Dai, Xing, Feng, Qi, Luo, WenGang, Li, YiYang, Wang, Kai, Zhang, LiYao, Pan, WenWu, Wang, ShuMin, Yang, ShenYuan, Wang, KaiYou. The effect of Bi composition on the electrical properties of InP1-xBix. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY. 2017, 第 10 作者  通讯作者  60(4): http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=5967651&detailType=1.
[28] Li Jing, Yang ShenYuan, Li ShuShen. N-Doped Zigzag Graphene Nanoribbons on Si(001): a First-Principles Calculation. CHINESE PHYSICS LETTERS[J]. 2015, 第 2 作者  通讯作者  32(7): http://lib.cqvip.com/Qikan/Article/Detail?id=665867320.
[29] LI Jing YANG Shen-Yuan LI Shu-Shen. Structural and Electronic Properties of Zigzag Graphene Nanoribbons on Si(001) Substrates. 中国物理快报：英文版[J]. 2015, 115-118, http://lib.cqvip.com/Qikan/Article/Detail?id=664021870.
[30] Yang, Shenyuan, Prendergast, David, Neaton, Jeffrey B. Tuning Semiconductor Band Edge Energies for Solar Photocatalysis via Surface Ligand Passivation. NANO LETTERS[J]. 2012, 第 1 作者12(1): 383-388, https://www.webofscience.com/wos/woscc/full-record/WOS:000298943100067.
[31] Yang, Shenyuan, Prendergast, David, Neaton, Jeffrey B. Nonlinear variations in the electronic structure of II-VI and III-V wurtzite semiconductors with biaxial strain. APPLIED PHYSICS LETTERS[J]. 2011, 第 1 作者  通讯作者  98(15): http://dx.doi.org/10.1063/1.3578193.
[32] 杨身园. Tuning the electronic structure of II-VI and III-V semiconductors with biaxial strain. Appl. Phys. Lett.. 2011, 第 1 作者
[33] Yang, Shenyuan, Prendergast, David, Neaton, Jeffrey B. Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures. NANO LETTERS[J]. 2010, 第 1 作者10(8): 3156-3162, https://www.webofscience.com/wos/woscc/full-record/WOS:000280728900071.
[34] Yoon, Mina, Yang, Shenyuan, Zhang, Zhenyu. Interaction between hydrogen molecules and metallofullerenes. JOURNAL OF CHEMICAL PHYSICS[J]. 2009, 第 2 作者131(6): http://dx.doi.org/10.1063/1.3197006.
[35] Yang, Shenyuan, Yoon, Mina, Hicke, Christian, Zhang, Zhenyu, Wang, Enge. Electron transfer and localization in endohedral metallofullerenes: Ab initio density functional theory calculations. PHYSICAL REVIEW B[J]. 2008, 第 1 作者  通讯作者  78(11): http://dx.doi.org/10.1103/PhysRevB.78.115435.
[36] Yoon, Mina, Yang, Shenyuan, Hicke, Christian, Wang, Enge, Geohegan, David, Zhang, Zhenyu. Calcium as the superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage. PHYSICAL REVIEW LETTERS[J]. 2008, 第 2 作者100(20): http://ir.iphy.ac.cn/handle/311004/34430.
[37] Yang, Shenyuan, Zhang, Lixin, Chen, Hua, Wang, Enge, Zhang, Zhenyu. Generic guiding principle for the prediction of metal-induced reconstructions of compound semiconductor surfaces. PHYSICAL REVIEW B[J]. 2008, 第 1 作者  通讯作者  78(7): http://ir.iphy.ac.cn/handle/311004/38689.
[38] Yang, Shenyuan, Yoon, Mina, Wang, Enge, Zhang, Zhenyu. Energetics and kinetics of Ti clustering on neutral and charged C-60 surfaces. JOURNAL OF CHEMICAL PHYSICS[J]. 2008, 第 1 作者  通讯作者  129(13): http://ir.iphy.ac.cn/handle/311004/37299.
[39] 杨身园. Calcium as a superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage. Phys. Rev. Lett.. 2008, 第 1 作者
[40] Yoon, Mina, Yang, Shenyuan, Wang, Enge, Zhang, Zhenyu. Charged fullerenes as high-capacity hydrogen storage media. NANO LETTERS[J]. 2007, 第 2 作者7(9): 2578-2583, http://ir.iphy.ac.cn/handle/311004/34691.
[41] Jiang, Ying, Kim, YongHyun, Zhang, S B, Ebert, Philipp, Yang, Shenyuan, Tang, Zhe, Wu, Kehui, Wang, E G. Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111). APPLIED PHYSICS LETTERS[J]. 2007, 第 5 作者91(18): http://ir.iphy.ac.cn/handle/311004/38865.

   

（ 1 ） 5G/6G高性能射频期间研究, 参与, 中国科学院计划, 2022-07--2027-07
（ 2 ） 远程范德瓦尔斯外延机制的理论研究, 负责人, 国家任务, 2021-01--2024-12
（ 3 ） 石墨烯晶圆衬底上高品质氮化物的制备与生长机制研究, 参与, 国家任务, 2020-06--2025-05
（ 4 ） 基于隧穿及混合机制的超陡摆幅新原理器件技术, 负责人, 国家任务, 2019-08--2023-07
（ 5 ） II-VI族半导体芯/壳纳米线异质结中的应变与掺杂, 负责人, 国家任务, 2015-01--2018-12
（ 6 ） 二维电子材料及纳米量子器件的研究和原位分析仪器, 参与, 国家任务, 2015-01--2020-12
（ 7 ） 2.8-4.0微米室温高性能半导体激光器材料和器件制备研究, 参与, 国家任务, 2014-01--2018-08
（ 8 ） 石墨烯纳米带与衬底相互作用的第一性原理研究, 负责人, 国家任务, 2013-01--2015-12
（ 9 ） 分立量子点可控高效纳米发光器件机理及制备基础研究, 参与, 国家任务, 2013-01--2017-12

（1）Theoretical study on growth of nitrides via van der Waals epitaxy   2021年半导体前沿物理国际研讨会   2021-05-14
（2）石墨烯 /蓝宝石界面结构的第一性原理研究    2019年全国半导体物理学术会议   2019-07-09
（3）基于石墨烯的范德华外延生长应力释放机制研究   中国物理学会2018秋季学术会议   2018-09-13
（4）First-Principles Study on Nonlinear Variation of Electron Concentration in InPBi Materials   2016-07-24
（5）InPBi合金中电子浓度非线性变化的第一性原理研究   中国物理学会2015年秋季学术会议   杨身园，魏冠男，骆军委，李树深   2015-09-10
（6）Tuning the electronic structure of II-VI semiconductors and nanostructures for energy applications   Shenyuan Yang   2011-03-24
（7）Tuning semiconductor band edge energies via surface ligand passivation   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2011-03-23
（8）Strain-induced band gap modification in coherent core/shell nanostructures   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-10-01
（9）Charge separation and electronic level alignment in multicomponent CdSe/CdTe nanostructures from first principles   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-04-09
（10）Electronic level alignment in multicomponent CdSe/CdTe nanostructures from first principles   Shenyuan Yang, D. Prendergast, and J. B. Neaton   2010-03-15

已指导学生

相琳琳  硕士研究生  070205-凝聚态物理  

何慧卉  硕士研究生  070205-凝聚态物理