基本信息
李淘  男  硕导  中国科学院上海技术物理研究所
电子邮件: litao@mail.sitp.ac.cn
通信地址: 上海市玉田路500号19307组件室
邮政编码: 200083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
短波红外探测器
偏振红外探测器
智能红外探测器

教育背景

2007-09--2010-07   中国科学院上海技术物理研究所   理学博士

工作经历

   
工作简历
2017-09~现在, 中国科学院上海技术物理研究所, 研究员
2015-04~2015-07,University of Illinois at Chicago, Visiting Research Associate Professor
2012-10~2017-09,中国科学院上海技术物理研究所, 副研究员
2010-07~2012-09,中国科学院上海技术物理研究所, 助理研究员
2007-09~2010-07,中国科学院上海技术物理研究所, 理学博士

教授课程

短波红外InGaAs探测器

专利与奖励

   
专利成果
( 1 ) 一种焦平面探测器两步倒焊工艺方法, 2021, 第 4 作者, 专利号: CN109877479B

( 2 ) 一种多层InGaAs探测器材料结构和制备方法, 2020, 第 5 作者, 专利号: CN110896120A

( 3 ) 一种控制铟镓砷光敏芯片平面度的平衡层结构, 2019, 第 6 作者, 专利号: CN110491950A

( 4 ) 一种用于延伸波长InGaAs焦平面探测器的耦合方法, 2019, 第 7 作者, 专利号: CN109980044A

( 5 ) 单片集成长线列金属偏振光栅的InGaAs焦平面探测器, 2019, 第 3 作者, 专利号: CN208902268U

( 6 ) 一种背照射型的可见及短波红外宽光谱InGaAs探测器, 2019, 第 3 作者, 专利号: CN109461788A

( 7 ) 一种正照射型的可见及短波红外宽光谱InGaAs探测器, 2019, 第 3 作者, 专利号: CN109461785A

( 8 ) 一种单片集成在光电探测器上的金属纳米光天线, 2018, 第 2 作者, 专利号: CN108445563A

( 9 ) 铟镓砷短波红外探测器, 2016, 第 2 作者, 专利号: CN205810840U

( 10 ) 一种铟镓砷短波红外探测器, 2016, 第 2 作者, 专利号: CN105914250A

( 11 ) 单片集成在高折射率衬底的亚波长金属光栅偏振片, 2015, 第 2 作者, 专利号: CN204679671U

( 12 ) 一种单片集成在高折射率衬底的亚波长金属光栅偏振片, 2015, 第 2 作者, 专利号: CN104880755A

( 13 ) 一种延伸波长的平面型铟镓砷红外探测器芯片制备方法, 2013, 第 6 作者, 专利号: CN103413863A

( 14 ) 一种台面型铟镓砷探测器制备方法, 2012, 第 5 作者, 专利号: CN102376824A

( 15 ) 一种平面型子像元结构铟镓砷红外探测器芯片制备方法, 2012, 第 3 作者, 专利号: CN102544222A

( 16 ) 一种平面型子像元结构铟镓砷红外探测器芯片, 2012, 第 3 作者, 专利号: CN102544043A

( 17 ) 单片集成亚波长微偏振光栅的铟镓砷近红外探测器, 2011, 第 5 作者, 专利号: CN102221406A

( 18 ) 硅-铁均匀包覆型复合粉的制备方法, 2003, 第 5 作者, 专利号: CN1433860

出版信息

   
发表论文
(1) Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging, INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING, 2021, 通讯作者
(2) Direct correlation of defects and dark currents of InGaAs/InP photodetectors, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 第 9 作者
(3) Fabrication of highly-uniform indium ball bumps for small unit-cell infrared focal plane arrays, AOPC 2020: INFRARED DEVICE AND INFRARED TECHNOLOGY, 2020, 第 5 作者
(4) Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays, ACS APPLIED ELECTRONIC MATERIALS, 2020, 第 7 作者
(5) Design and fabrication o f an InGaAs focal plane array integrated with linear-array polarization grating, Optics Letters, 2020, 第 2 作者
(6) High electron mobility InP grown by solid source molecular beam epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 第 8 作者
(7) 短波红外InGaAs焦平面探测器研究进展, Developments of short-wave infrared InGaAs focal plane detectors, 红外与激光工程, 2020, 第 3 作者
(8) Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 8 作者
(9) Optimization study of metallic sub-wavelength gratings as the polarizer in infrared wavelengths, APPLIED OPTICS, 2020, 第 7 作者
(10) A study of nano-structural effect on the polarization characteristics of metallic sub-wavelength grating polarizers in visible wavelengths, MICROELECTRONIC ENGINEERING, 2020, 第 7 作者
(11) Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array, AIP ADVANCES, 2020, 第 5 作者
(12) Design and fabrication of an InGaAs focal plane array integrated with linear-array polarization grating, OPTICS LETTERS, 2020, 第 4 作者
(13) Characterization and calibration of blind pixels in short-wave infrared InGaAs focal plane arrays, OPTICAL ENGINEERING, 2019, 第 3 作者
(14) 结电容对不同光敏元尺寸InGaAs探测器I-V特性测试的影响, Impact of Junction Capacitance on Measurement of I-V Characteristic of InGaAs Detectors with Different Photosensitive Element Sizes, 光电子, 2019, 第 2 作者
(15) Research on polarization performance of InGaAs focal plane array integrated with superpixel-structured subwavelength grating, OPTICS EXPRESS, 2019, 第 2 作者
(16) Integrating subwavelength polarizers onto InP-InxGa1-xAs sensors for polarimetric detection at short infrared wavelength, PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, 2019, 第 4 作者
(17) Inert gas packaging of InGaAs detector with multistage thermoelectric cooler, 9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: ADVANCED OPTICAL MANUFACTURING TECHNOLOGIES, 2019, 第 4 作者
(18) 中心距10μm截止波长2.6μm的延伸波长InGaAs焦平面探测器, InGaAs focal plane array with the sub-10μm pixel pitch and 2.6μm cut-off wavelength, 红外与毫米波学报, 2018, 第 10 作者
(19) 增强短波红外InGaAs探测器透过率的纳米光天线研究, Enhanced Transmissivity of InP-based InGaAs Photodetectors by Optical Nano-antenna, 红外技术, 2018, 第 2 作者
(20) 中心距10μm截止波长2.6μm的延伸波长InGaAs焦平面探测器, InGaAs focal plane array with the sub-10μm pixel pitch and 2.6μm cut-off wavelength, 红外与毫米波学报, 2018, 第 10 作者
(21) InGaAs focal plane array with the sub-10 mu m pixel pitch and 2.6 mu m cut-off wavelength, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2018, 第 10 作者
(22) Study on the performance of 2.6 µm In0.83Ga0.17As detector with different etch gases, Infrared Physics and Technology, 2017, 第 3 作者
(23) Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases, INFRARED PHYSICS & TECHNOLOGY, 2017, 第 3 作者
(24) An optical nano-antenna structure of metallic ball array for enhancement of near-infrared photodetection, AOPC 2017: OPTICAL SENSING AND IMAGING TECHNOLOGY AND APPLICATIONS, 2017, 第 1 作者
(25) Measuring the Minority-Carrier Diffusion Length of n-Type In0.53Ga0.47As Epilayers Using Surface Photovoltage, JOURNAL OF ELECTRONIC MATERIALS, 2017, 第 3 作者
(26) 高性能短波红外InGaAs焦平面探测器研究进展, Developments of High Performance Short-wave Infrared InGaAs Focal Plane Detectors, 红外技术, 2016, 第 6 作者
(27) 不同退火处理的台面型In_(0.83)Ga_(0.17)As pin光电二极管暗电流分析, Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment, 红外与激光工程, 2016, 第 2 作者
(28) Dynamic gamma irradiation effects on mid-wavelength HgCdTe photovoltaic detectors, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 2 作者
(29) n- on-p结构深台面延伸波长InGaAs探测器的ICPCVD钝化工艺, ICPCVD passivation of n on p structure deep mesa extended wavelength InGaAs photodetectors, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 4 作者
(30) ICPCVD passivation of n on p structure deep mesa extended wavelength InGaAs photodetectors, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 4 作者
(31) 中波碲镉汞光伏探测器的实时gamma辐照效应, Dynamic gamma irradiation effects on mid-wavelength HgCdTe photovoltaic detectors, 红外与毫米波学报, 2016, 第 2 作者
(32) 中波碲镉汞光伏探测器的实时gamma辐照效应, Dynamic gamma irradiation effects on mid-wavelength HgCdTe photovoltaic detectors, 红外与毫米波学报, 2016, 第 2 作者
(33) 不同退火处理的台面型In_(0.83)Ga_(0.17)As pin光电二极管暗电流分析, Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment, 红外与激光工程, 2016, 第 2 作者
(34) Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As, INFRARED PHYSICS & TECHNOLOGY, 2015, 第 7 作者
(35) 异质结InP/InGaAs探测器欧姆接触温度特性研究, Temperature-dependent characteristics of ohmic contact in hetero-junction InP /InGaAs detector, 红外与毫米波学报, 2015, 第 3 作者
(36) Low leakage of In0.83Ga017As photodiode with Al2O3/SiNx stacks, INFRARED PHYSICS & TECHNOLOGY, 2015, 第 4 作者
(37) 短波红外In_(0.53)Ga_(0.47)As探测器的实时γ辐照研究, Study on Real-timeγIrradiation Effect on Short Wavelength Infrared In_(0.53)Ga_(0.47)As Detectors, 半导体光电, 2015, 第 4 作者
(38) 可见增强的32×32元平面型InGaAs/InP面阵探测器, 32 × 32 pixel planar InGaAs/InP detector with response extended to visible wavelength band, 红外与毫米波学报, 2015, 第 8 作者
(39) Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 第 5 作者
(40) Anneal treatment to improve the performance of extended wavelength In0.83Ga0.17As photodetectors, INFRARED PHYSICS & TECHNOLOGY, 2015, 第 2 作者
(41) Temperature-dependent characteristics of ohmic contact in hetero-junction InP/InGaAs detector, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 第 3 作者
(42) InGaAs焦平面探测器电串音性能的研究, Electrical crosstalk in InGaAs focal plane array, 红外与毫米波学报, 2015, 第 5 作者
(43) Role of dielectric film in metal grating for improved polarized transmittance in 0.9-1.7 mu m range, JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 第 4 作者
(44) Electrical crosstalk in InGaAs focal plane array, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 第 6 作者
(45) The simulation of localized surface plasmon and surface plasmon polariton in wire grid polarizer integrated on InP substrate for InGaAs sensor, AIP ADVANCES, 2015, 第 2 作者
(46) Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors, ACS APPLIED MATERIALS & INTERFACES, 2015, 第 2 作者
(47) 32 x 32 pixel planar InGaAs/InP detector with response extended to visible wavelength band, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 第 8 作者
(48) Light trapping characteristics of metal nanoshells deposited on photovoltaic silicon films, OPTICS COMMUNICATIONS, 2015, 第 4 作者
(49) Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector, INFRARED PHYSICS & TECHNOLOGY, 2015, 第 5 作者
(50) Metal semishell-substrate coupled structures with enlargened near-field enhancement area, OPTICAL MATERIALS EXPRESS, 2015, 第 3 作者
(51) Responsivity Performance of Extended Wavelength InGaAs Shortwave Infrared Detector Arrays, IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS, 2014, 第11作者
(52) Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17As photodiodes, INFRARED PHYSICS & TECHNOLOGY, 2014, 第 4 作者
(53) Surface passivation of In0.83Ga0.17As photodiode with high-quality SiN layer fabricated by ICPCVD at the lower temperature, INFRARED PHYSICS & TECHNOLOGY, 2014, 第 3 作者
(54) The 1/f noise characteristics of In0.83Ga0.17As photodiodes with SiNx passivation films fabricated by two different techniques, INFRARED PHYSICS & TECHNOLOGY, 2014, 第 5 作者
(55) The Influence of Sunlight Irradiation on the Characteristics of InGaAs Detectors, INFRARED SENSORS, DEVICES, AND APPLICATIONS IV, 2014, 第 4 作者
(56) Extended wavelength InGaAs infrared detector arrays based on three types of material structures grown by MBE, INFRARED TECHNOLOGY AND APPLICATIONS XL, 2014, 第 2 作者
(57) Performance of near-infrared InGaAs focal plane array with different series resistances to p-InP layer, IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS, 2014, 第 2 作者
(58) ICP刻蚀InGaAs的微观损伤机制研究, Microcosmic damage mechanism of inductively couple plasma etching for InGaAs, 红外与激光工程, 2013, 第 6 作者
(59) Performance of Low Dark Current InGaAs Shortwave Infrared Detector, 6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 通讯作者
(60) The temperature-dependent photoresponse uniformity of an InGaAs subpixels infrared detector by the LBIC technique, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 第 3 作者
(61) Front-illuminated planar type InGaAs sub-pixels infrared detector, 6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 第 3 作者
(62) 平面型24元InGaAs短波红外探测器, Planar-type 24×1 InGaAs Short Wave Infrared Detectors, 红外技术, 2011, 第 1 作者
(63) Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique, Suppression of extension of the photo-sensitive area for a planar-type front-illuminated InGaAs detector by the LBIC technique, 半导体学报, 2010, 第 3 作者
(64) 台面型InGaAs探测器暗电流及低频噪声研究, Investigation on dark current and low frequency noise of mesa type InGaAs infrared detector, 光电子.激光, 2010, 第 1 作者
(65) 近红外InGaAs探测器台面结构对器件性能的影响, Influence of mesa structure on the characteristics of the near infrared InGaAs photodiodes, 激光与红外, 2010, 第 5 作者
(66) 空间遥感用短波红外InGaAs探测器暗电流及低频噪声研究, 2010, 第 1 作者
(67) AFM/SCM及LBIC技术在平面型保护环结构InGaAs探测器设计中的应用, OPTIMUM GUARD-RING FOR PLANAR InP/InGaAs PHOTODIODE:CHARACTERIZED WITH AFM,SCM and LBIC, 红外与毫米波学报, 2010, 第 1 作者
(68) 延伸波长InGaAs红外探测器的实时γ辐照研究, Real-time study of γ irradiation effect on extended wavelength InGaAs infrared detectors, 激光与红外, 2010, 第 1 作者
(69) OPTIMUM GUARD-RING FOR PLANAR InP/InGaAs PHOTODIODE: CHARACTERIZED WITH AFM, SCM and LBIC, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 第 4 作者
(70) OPTIMUM GUARD-RING FOR PLANAR InP/InGaAs PHOTODIODE: CHARACTERIZED WITH AFM, SCM and LBIC, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 第 4 作者
(71) Low frequency noise characteristics of extended wavelength InGaAs infrared detector, Proc. of SPIE, 2009, 第 1 作者
(72) InP/InxGa1-xAs异质结构中Zn元素的扩散机制, Zn diffusion mechanism in InP/InxGa1-xAs hetero structure, 红外与激光工程, 2009, 第 3 作者
(73) Effects of an anodic oxide passivation layer on mesa-type InGaAs (PIN) photodetectors, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 第 5 作者
(74) InGaAs短波红外探测器的偏振响应特性分析, Polarization-dependent Responsivity of InGaAs SWIR Photodetector, 红外, 2009, 第 5 作者
(75) 平面型InGaAs红外探测器I-V特性研究, Current-voltage characteristics of planar-type InGaAs infrared detectors, 光电子.激光, 2009, 第 3 作者
(76) 平面型2.6μmInGaAs红外探测器变温特性研究, Temperature-dependent characteristics study of 2.6μm planar-type InGaAs infrared detector, 激光与红外, 2009, 第 4 作者
(77) InGaAs探测器性能与结面积和周长的关系研究, The dependence of InGaAs photodetectors′ performance on area and perimeter of the PN junction, 光电子.激光, 2009, 第 3 作者
(78) InGaAs探测器制备的ICP刻蚀方法研究, Fabrication of InGaAs Detector Using ICP Etching Method, 激光与红外, 2009, 第 4 作者
(79) InGaAs台面探测器的AIN钝化研究, Effect of AIN passivation on mesa structured PIN InGaAs detector, 红外与激光工程, 2009, 第 2 作者
(80) 平面型InGaAs红外探测器Ⅰ-Ⅴ特性研究, Current-voltage characteristics of planar-type InGaAs infrared detectors, 光电子·激光, 2009, 第 3 作者
(81) 空间遥感用近红外InGaAs焦平面组件, Near-infrared InGaAs FPAs for space applications, 红外与激光工程, 2009, 第 6 作者

科研活动

   
科研项目
( 1 ) 高性能近红外InGaAs探测材料基础研究及其航天应用验证, 参与, 国家任务, 2012-01--2016-08
( 2 ) 航空机载用平面型大光敏元InGaAs短波红外探测器, 负责人, 研究所自选, 2012-01--2013-12
( 3 ) 基于纳米天线增强效应的新型短波红外探测器研究, 负责人, 国家任务, 2017-01--2019-12
( 4 ) 基于阻挡层结构外延材料的InGaAs探测器的可见-短波红外光谱拓展方法研究, 参与, 国家任务, 2013-01--2017-12
( 5 ) 数字化铟镓砷, 负责人, 国家任务, 2019-11--2021-12
( 6 ) 偏振铟镓砷, 负责人, 国家任务, 2020-01--2022-06