基本信息
赵洪泉  男  博导  中国科学院重庆绿色智能技术研究院
电子邮件: hqzhao@cigit.ac.cn
通信地址: 重庆市北碚区水土镇水土高新园方正大道266号
邮政编码: 400714

研究领域

微纳光子学和光电子学

目前本人的主要研究方向包括:

1、新型量子光源:基于密集量子体系的超荧光研究

     目标:提出基于纳柱腔结构的NV色心密集量子点群的超荧光器件设计方案;制备出基于金刚石纳柱腔结构的NV色心量子体系超荧光原型器件,实现器件在液氦低温下的超荧光激发。

2、二维材料制备及其光电子器件与系统集成研究。

    目标:在IV-VI体系上探索具有新型光量子性能的材料,及其器件设计、制作和功能应用实现,并最终实现器件系统的集成开发。重点开发以GeSe为代表的二维材料体系。

3、基于富勒烯单分子的单光子研究。

    目标:在富勒烯体系上寻找合适的单光子分子材料,并在此基础上研究单光子器件等。

招生信息

欢迎光学工程、微电子与固体电子学、物理学、材料物理等方向的本科毕业生报考我们光学工程专业方向硕士研究生。

招生专业
080300-光学工程
080904-电磁场与微波技术
070207-光学
招生方向
量子光学与量子信息

教育背景

2003-08--2006-07   中国科学院半导体研究所   工学博士
2000-09--2003-06   广西大学材料所   材料物理与化学工学硕士
1996-09--2000-06   湖南省湘潭大学   物理学学士
学历
2006年中科院半导体所工学博士
学位
微电子学与固体电子学工学博士

工作经历

2006.8-2009.3 日本北海道大学量子电子学集成中心, COE研究员

2009.4-2013.3 日本大阪大学产业科学研究所, JSPS研究员

2013.4-今  中科院重庆绿色智能技术研究院,研究员,量子信息技术研究中心主任

工作简历
2009-04~2013-04,大阪大学产业科学研究所, 特别研究员
2006-08~2009-04,北海道大学量子电子学集成中心, COE研究员
2003-08~2006-07,中国科学院半导体研究所, 工学博士
2000-09~2003-06,广西大学材料所, 材料物理与化学工学硕士
1996-09~2000-06,湖南省湘潭大学, 物理学学士

专利与奖励

   
专利成果
( 1 ) 晶片直接键合过程中试验参数的优化方法, 实用新型, 2007, 第 1 作者, 专利号: CN1996551
( 2 ) 一种低温晶片直接键合方法, 实用新型, 2007, 第 1 作者, 专利号: CN1933096

出版信息

   
发表论文
[1] 闫冰, 宁博, 张国欣, 周大华, 石轩, 王春香, 赵洪泉. Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performance. Advanced Optical Materials[J]. 2022, 10(6): 2102413-2102413, [2] 赵洪泉, 张国欣, 闫冰, 宁博, 王春香, 赵杨, 石轩. Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation. RESEARCH[J]. 2022, https://doi.org/10.34133/2022/9840970.
[3] Zhou, Dahua, Yu, Leyong, Zhu, Peng, Zhao, Hongquan, Feng, Shuanglong, Shen, Jun. Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions. NANOMATERIALS[J]. 2021, 11(3): https://doaj.org/article/5c71dbdb231240b9ad4a0873e259f988.
[4] 戴芳博, 袁健美, 许凯燕, 郭政, 赵洪泉, 毛宇亮. 硒化锗纳米片在氧气和丁烷气体中的电导性能. 物理学报. 2021, 70(17): 305-312, [5] Li, Yuzhi, Shi, Xuan, Dai, Fangbo, Zhou, Dahua, Jin, Minghui, Zheng, Hongying, Yang, Yuhui, Zhao, Hongquan, Wang, Junzhong. Enhancement of photodetection by PbSe quantum dots on atomic-layered GeS devices. JOURNAL OF PHYSICS D-APPLIED PHYSICS[J]. 2020, 53(50): http://dx.doi.org/10.1088/1361-6463/abb102.
[6] Shi, Biao, Zhou, Daming, Qiu, Risheng, Bahri, Mohamed, Kong, Xiangdong, Zhao, Hongquan, Tlili, Chaker, Wang, Deqiang. High-efficiency synthesis of large-area monolayer WS2 crystals on SiO2/Si substrate via NaCl-assisted atmospheric pressure chemical vapor deposition. APPLIED SURFACE SCIENCE[J]. 2020, 533: http://dx.doi.org/10.1016/j.apsusc.2020.147479.
[7] Zhao, HongQuan, Yang, Shihan, Xu, TongLe, Shi, Xuan, Lu, Shirong, Wu, JianWei, Wang, Chunxiang, Hu, JianMing. Synthesis and characterization of single-bond fullerene dimer derivatives. JOURNAL OF MATERIALS RESEARCH[J]. 2020, 35(20): 2676-2683, https://www.webofscience.com/wos/woscc/full-record/WOS:000595594900004.
[8] Mao, Yuliang, Xu, Congsheng, Yuan, Jianmei, Zhao, Hongquan. A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells. JOURNAL OF MATERIALS CHEMISTRY A[J]. 2019, 7(18): 11265-11271, [9] 李玉智, 毛鑫, 石轩, 王春香, 赵洪泉, 王俊忠. 热处理温度对金锗薄膜电阻的影响. 中国科学:物理学、力学、天文学. 2019, 49(1): 72-78, http://lib.cqvip.com/Qikan/Article/Detail?id=6100173402.
[10] Shi, Biao, Zhou, Daming, Fang, Shaoxi, Djebbi, Khouloud, Feng, Shuanglong, Zhao, Hongquan, Tlili, Chaker, Wang, Deqiang. Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition. NANOMATERIALS[J]. 2019, 9(4): http://119.78.100.138/handle/2HOD01W0/7904.
[11] Zhao, Hongquan, Yang, Yuhui, Wang, Chunxiang, Zhou, Dahua, Shi, Xuan, Li, Yuzhi, Mao, Yuliang. Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps. ACS APPLIED MATERIALS & INTERFACES[J]. 2019, 11(41): 38031-38038, https://www.webofscience.com/wos/woscc/full-record/WOS:000491219700069.
[12] Mao, Yuliang, Mao, Xin, Zhao, Hongquan, Zhang, Nandi, Shi, Xuan, Yuan, Jianmei. Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations. SCIENTIFIC REPORTS[J]. 2018, 8(1): http://119.78.100.138/handle/2HOD01W0/7203.
[13] Zhao, Hongquan, Mao, Yuliang, Mao, Xin, Shi, Xuan, Xu, Congshen, Wang, Chunxiang, Zhang, Shangmin, Zhou, Dahua. Band Structure and Photoelectric Characterization of GeSe Monolayers. ADVANCED FUNCTIONAL MATERIALS[J]. 2018, 28(6): https://www.webofscience.com/wos/woscc/full-record/WOS:000424152900008.
[14] Mao, Yuliang, Long, Linbo, Yuan, Jianmei, Zhong, Jianxin, Zhao, Hongquan. Toxic gases molecules (NH3, SO2 and NO2) adsorption on GeSe monolayer with point defects engineering. CHEMICAL PHYSICS LETTERS[J]. 2018, 706: 501-508, http://dx.doi.org/10.1016/j.cplett.2018.06.061.
[15] Shi, Xuan, Yuan, Hao, Zhao, HongQuan. Microscopic Description of Spontaneous Emission in Stark Chirped Rapid Adiabatic Passages. INTERNATIONAL JOURNAL OF THEORETICAL PHYSICS[J]. 2018, 57(1): 9-19, https://www.webofscience.com/wos/woscc/full-record/WOS:000419161500002.
[16] Mao, Yuliang, Xu, Congshen, Yuan, Jianmei, Zhao, Hongquan. Effect of stacking order and in-plane strain on the electronic properties of bilayer GeSe. PHYSICAL CHEMISTRY CHEMICAL PHYSICS[J]. 2018, 20(10): 6929-6935, https://www.webofscience.com/wos/woscc/full-record/WOS:000429286100016.
[17] Shi, X, Yuan, H, Mao, X, Ma, Y, Zhao, H Q. Robust quantum state transfer inspired by Dzyaloshinskii-Moriya interactions. PHYSICAL REVIEW A[J]. 2017, 95(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000401444200004.
[18] 赵洪泉. Band structure and photoelectric characterization of GeSe monolayer. Advanced Functional Materials. 2017, [19] Guo, Gang, Mao, Yuliang, Zhong, Jianxin, Yuan, Jianmei, Zhao, Hongquan. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle. APPLIED SURFACE SCIENCE[J]. 2017, 406: 161-169, http://dx.doi.org/10.1016/j.apsusc.2017.02.053.
[20] Guo Gang, Mao Yuliang, Zhong Jianxin, Yuan Jianmei, Zhao Hongquan. Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study. Applied Surface Science[J]. 2017, 406: 161-169, http://dx.doi.org/10.1016/j.apsusc.2017.02.053.
[21] Zhao, HongQuan, Mao, Xin, Zhou, Dahua, Feng, Shuanglong, Shi, Xuan, Ma, Yong, Wei, Xingzhan, Mao, Yuliang. Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling. NANOSCALE[J]. 2016, 8(45): 18995-19003, https://www.webofscience.com/wos/woscc/full-record/WOS:000387859800022.
[22] Wang, Jing, Jiang, Xiaoxiao, Xia, Liangping, Tang, Linlong, Hu, Sheng, Lv, Jiangtao, Zhao, Hongquan, Si, Guangyuan, Shi, Ruiying. Fabrication and optical measurement of double-overlapped annular apertures. OPTICAL MATERIALS[J]. 2016, 60: 13-16, http://www.corc.org.cn/handle/1471x/1909967.
[23] Fujiwara, Masazumi, Zhao, HongQuan, Noda, Tetsuya, Ikeda, Kazuhiro, Sumiya, Hitoshi, Takeuchi, Shigeki. Ultrathin fiber-taper coupling with nitrogen vacancy centers in nanodiamonds at cryogenic temperatures. OPTICS LETTERS[J]. 2015, 40(24): 5702-5705, https://www.webofscience.com/wos/woscc/full-record/WOS:000366681600001.
[24] 赵洪泉. Observation of ultra-narrow zero-phonon-line photoluminescence spectra of nitrogen vacancy centers in nanodiamonds using a Fabry-Perot interferometer. OPEX. 2013, [25] Zhao, HongQuan, Fujiwara, Masazumi, Takeuchi, Shigeki. Suppression of fluorescence phonon sideband from nitrogen vacancy centers in diamond nanocrystals by substrate effect. OPTICS EXPRESS[J]. 2012, 20(14): 15628-15635, https://www.webofscience.com/wos/woscc/full-record/WOS:000306176100098.
[26] ZHao, HongQuan, Kasai, Seiya. WPG-Controlled Quantum BDD Circuits with BDD Architecture on GaAs-Based Hexagonal Nanowire Network Structure. JOURNAL OF NANOMATERIALS[J]. 2012, 2012: https://doaj.org/article/689eca905d7c4e60a9ee67685ff17d55.
[27] Schroeder, Tim, Fujiwara, Masazumi, Noda, Tetsuya, Zhao, HongQuan, Benson, Oliver, Takeuchi, Shigeki. A nanodiamond-tapered fiber system with high single-mode coupling efficiency. OPTICS EXPRESS[J]. 2012, 20(10): 10490-10497, https://www.webofscience.com/wos/woscc/full-record/WOS:000303879700013.
[28] Zhao, HongQuan, Fujiwara, Masazumi, Takeuchi, Shigeki. Effect of Substrates on the Temperature Dependence of Fluorescence Spectra of Nitrogen Vacancy Centers in Diamond Nanocrystals. JAPANESE JOURNAL OF APPLIED PHYSICS[J]. 2012, 51(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000308489700010.
[29] Fujiwara, Masazumi, Noda, Tetsuya, Tanaka, Akira, Toubaru, Kiyota, Zhao, HongQuan, Takeuchi, Shigeki. Coupling of ultrathin tapered fibers with high-Q microsphere resonators at cryogenic temperatures and observation of phase-shift transition from undercoupling to overcoupling. OPTICS EXPRESS[J]. 2012, 20(17): 19545-19553, https://www.webofscience.com/wos/woscc/full-record/WOS:000307873600106.
[30] Fujiwara, Masazumi, Toubaru, Kiyota, Noda, Tetsuya, Zhao, HongQuan, Takeuchi, Shigeki. Highly Efficient Coupling of Photons from Nanoemitters into Single-Mode Optical Fibers. NANO LETTERS[J]. 2011, 11(10): 4362-4365, https://www.webofscience.com/wos/woscc/full-record/WOS:000295667000059.
[31] Zhao, HongQuan, Kasai, Seiya, Shiratori, Yuta, Hashizume, Tamotsu. A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology. NANOTECHNOLOGY[J]. 2009, 20(24): https://www.webofscience.com/wos/woscc/full-record/WOS:000266436500004.
[32] Zhao, HongQuan, Kasai, Seiya, Hashizume, Tamotsu, Wu, NanJian. Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures. IEICE TRANSACTIONS ON ELECTRONICS[J]. 2008, E91C(7): 1063-1069, http://ir.semi.ac.cn/handle/172111/6526.
[33] 于丽娟, 赵洪泉, 杜云, 李敬, 黄永箴. 硅基键合InP-InGaAsP量子阱连续激光器的研制. 半导体学报. 2007, 28(7): 1117-1120, http://lib.cqvip.com/Qikan/Article/Detail?id=24955636.
[34] 赵洪泉. 键合法制备硅基1.55um InP-InGaAsP量子阱激光器. 半导体学报. 2006, [35] 赵洪泉. X-ray double crystalline diffraction for Strain analysis of bonded InP/InGaAsP structured wafer on Si. Material science and engineering B. 2006, [36] 赵洪泉. Thermal stress analysis of InP/InGaAsP multiple quantum wells chemically bonded to Si (100). Journal of Applied Physics. 2006, [37] Zhao, HQ, Yu, LJ, Huang, YZ. Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY[J]. 2006, 128(1-3): 93-97, http://dx.doi.org/10.1016/j.mseb.2005.11.026.
[38] Zeng, LM, Zhao, HQ. The 773 K isothermal section of the Ho-Fe-Sb ternary system. JOURNAL OF ALLOYS AND COMPOUNDS[J]. 2004, 366(1-2): 201-204, https://www.webofscience.com/wos/woscc/full-record/WOS:000189081000035.

科研活动

   
科研项目
( 1 ) 纳米固态量子效应与光量子态研究, 主持, 省级, 2013-08--2016-07
( 2 ) 基于纳米波导与微腔耦合的金刚石NV体系原子非线性CNOT门研究 , 主持, 部委级, 2013-12--2015-06
( 3 ) 纳米金刚石NV体系材料优化和单光子纠缠态实验制备研究, 主持, 市地级, 2014-06--2015-05
参与会议
(1)Zero phonon-line spectra fine measurement of nitrogen vacancy centers in nanodiamonds by using a Fabry-Perot interferometer   第14届国际量子通信、测量和计算会议   赵洪泉,任昌亮,石轩,竹内繁树   2014-11-01