基本信息
赵德刚  男  博导  中国科学院半导体研究所
电子邮件: dgzhao@red.semi.ac.cn
通信地址: 北京市清华东路甲35号光电子研发中心
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
招生方向
半导体光电子材料与器件

教育背景

1997-09--2000-06   中国科学院半导体研究所   博士
1994-09--1997-04   电子科技大学   硕士
1990-09--1994-06   电子科技大学   学士

工作经历

   
工作简历
2000-07~现在, 中国科学院半导体研究所, 研究员
1997-09~2000-06,中国科学院半导体研究所, 博士
1994-09~1997-04,电子科技大学, 硕士
1990-09~1994-06,电子科技大学, 学士
社会兼职
2011-01-01-今,中国电子学会高级会员,

教授课程

宽禁带半导体光电子材料与器件
材料科学与工程讲座
专题实践

专利与奖励

   
奖励信息
(1) 万人计划科技领军人才, 国家级, 2019
(2) 科技部创新人才推进计划-中青年科技创新领军人才, 部委级, 2018
(3) 享受国务院政府特殊津贴, , 其他, 2018
(4) 国家百千万人才工程, 部委级, 2017
(5) 中国青年科技奖, 部委级, 2011
专利成果
( 1 ) 低电阻率低温P型铝镓氮材料的制备方法, 2017, 第 2 作者, 专利号: CN104201256B

( 2 ) 一种GaN基紫外激光器结构及制备方法, 2017, 第 2 作者, 专利号: 201710472653.3

( 3 ) InGaN量子点的外延结构及生长方法, 2017, 第 2 作者, 专利号: CN104538524B

( 4 ) 绿光LED外延层结构及生长方法, 2017, 第 2 作者, 专利号: CN104393132B

( 5 ) 减小GaN基蓝紫光端发射激光器电子泄漏的方法, 2017, 第 2 作者, 专利号: CN103956653B

( 6 ) 高密度高均匀InGaN量子点结构及生长方法, 2017, 第 2 作者, 专利号: CN104157759B

( 7 ) 基于二维岛的InGaN量子点外延结构及制备方法, 2015, 第 2 作者, 专利号: 201510522409.4

( 8 ) AlxGa1-xN基紫外探测器及制备方法, 2015, 第 2 作者, 专利号: 201510967933.2

( 9 ) 绿光LED芯片外延层的结构及生长方法, 2015, 第 2 作者, 专利号: 201510309152.4

( 10 ) InGaN太阳能电池及其制作方法, 2015, 第 2 作者, 专利号: ZL. 201210319268.2

( 11 ) InGaN量子点的外延结构及生长方法, 2014, 第 2 作者, 专利号: 201410784663.7

( 12 ) 制备低比接触电阻率的p-GaN欧姆接触的方法, 2014, 第 2 作者, 专利号: 201410652524.9

( 13 ) 降低Ni/Au与p-GaN欧姆接触的比接触电阻率的方法, 2014, 第 2 作者, 专利号: 201410652670.1

( 14 ) 绿光LED外延层结构及生长方法, 2014, 第 2 作者, 专利号: 201410636516.5

( 15 ) InGaN/AlInGaN多量子阱太阳能电池结构, 2014, 第 2 作者, 专利号: 201410592387.4

( 16 ) 同时降低发散角和阈值电流的激光器的制备方法, 2014, 第 2 作者, 专利号: 201410563124.0

( 17 ) 抑制GaAs基激光器高阶模的方法, 2014, 第 2 作者, 专利号: 201410564609.1

( 18 ) 降低电子泄漏的砷化镓激光器的制作方法, 2014, 第 2 作者, 专利号: 201410563125.5

( 19 ) 一种具有平面型发射阴极的纳米真空三极管及其制作方法, 2014, 第 2 作者, 专利号: 201410504100.8

( 20 ) 一种激光器及其制作方法, 2014, 第 2 作者, 专利号: 201410490395.8

( 21 ) 含有低温插入层的铟镓氮/氮化镓多量子阱太阳能电池, 2014, 第 2 作者, 专利号: 201410426193.7

( 22 ) 低电阻率低温P型铝镓氮材料的制备方法, 2014, 第 2 作者, 专利号: 201410426219.8

( 23 ) 高密度高均匀InGaN量子点结构及生长方法, 2014, 第 2 作者, 专利号: 201410412107.7

( 24 ) 一种GaN复合薄膜及在Si衬底上形成GaN复合薄膜的方法, 2014, 第 2 作者, 专利号: 201410337785.1

( 25 ) 测量肖特基势垒高度的装置和方法, 2014, 第 2 作者, 专利号: ZL. 201210209958.2

( 26 ) 高电阻低位错GaN薄膜及制备方法, 2014, 第 2 作者, 专利号: 201410089597.1

( 27 ) InGaN太阳能电池及其制作方法, 2012, 第 2 作者, 专利号: 201210319268.2

( 28 ) 氮化镓基雪崩型探测器及其制作方法, 2012, 第 2 作者, 专利号: ZL.200910077383.1

( 29 ) 测量肖特基势垒高度的装置和方法, 2012, 第 2 作者, 专利号: Z201210209958.2

( 30 ) 一种紫外红外双色探测器及制作方法, 2012, 第 2 作者, 专利号: ZL.201010183403.6

( 31 ) 一种测量直接带隙半导体材料禁带宽度的装置和方法 , 2012, 第 2 作者, 专利号: Z201210461734.0

出版信息

   
发表论文
(1) Study the influence mechanism of In/Ga ratio on InGaN waveguide layers during epitaxial growth, Journal of Alloys and Compounds, 2022, 
(2) Influences of gallium and nitrogen partial pressure on step-bunching and step-meandering morphology of InGaN quantum barrier layer, MATERIALS TODAY COMMUNICATIONS, 2021, 通讯作者
(3) Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells, Journal of Alloys and Compounds, 2021, 
(4) The influence of residual GaN on two-step-grown GaN on sapphire, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 通讯作者
(5) Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes, OPTICS EXPRESS, 2021, 通讯作者
(6) Transient behaviours of yellow and blue luminescence bands in unintentionally doped GaN, OPTICS EXPRESS, 2021, 通讯作者
(7) New mechanisms of cavity facet degradation for GaN-based laser diodes, JOURNAL OF APPLIED PHYSICS, 2021, 通讯作者
(8) Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN, AIP ADVANCES, 2021, 第 3 作者
(9) Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer, OPTICAL MATERIALS EXPRESS, 2021, 通讯作者
(10) Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector, OPTICAL MATERIALS EXPRESS, 2021, 第 3 作者
(11) Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies, JOURNAL OF CRYSTAL GROWTH, 2021, 
(12) Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells, NANOMATERIALS, 2021, 通讯作者
(13) The influence of temperature and TMGa flow rate on the quality of p-GaN, AIP ADVANCES, 2021, 通讯作者
(14) Investigation on the leakage current characteristics of large size GaN diodes, AIP ADVANCES, 2021, 
(15) The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes, Applied Surface Science, 2021, 
(16) A MOVPE method for improving InGaN growth quality by pre-introducing TMIn, A MOVPE method for improving InGaN growth quality by pre-introducing TMIn, 中国物理B:英文版, 2021, 通讯作者
(17) Performance improvement of GaN-based blue and ultraviolet double quantum well laser diodes by using stepped-doped lower waveguide, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 通讯作者
(18) Adjustment of Al atoms migration ability and its effect on the surface morphology of AlN grown on sapphire by metalorganic chemical vapor deposition, Semiconductor Science and Technology, 2021, 通讯作者
(19) The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties, NANOSCALE RESEARCH LETTERS, 2021, 通讯作者
(20) GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature, Journal of Semiconductors, 2021, 通讯作者
(21) Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers, JOURNAL OF APPLIED PHYSICS, 2021, 
(22) Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer, VACUUM, 2021, 通讯作者
(23) Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth, APPLIED SURFACE SCIENCE, 2021, 通讯作者
(24) Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness, JOURNAL OF ELECTRONIC MATERIALS, 2020, 第 3 作者
(25) Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 
(26) Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface treatment, APPLIED SURFACE SCIENCE, 2020, 通讯作者
(27) Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN, NANOSCALE RESEARCH LETTERS, 2020, 通讯作者
(28) Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness, NANOSCALE RESEARCH LETTERS, 2020, 通讯作者
(29) Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure, OPTICAL MATERIALS, 2020, 通讯作者
(30) Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift, Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift, CHINESE PHYSICS B, 2020, 通讯作者
(31) Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer, NANOPHOTONICS, 2020, 通讯作者
(32) Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells, OPTICAL MATERIALS EXPRESS, 2019, 通讯作者
(33) Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process, NANOSCALE RESEARCH LETTERS, 2019, 通讯作者
(34) Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 通讯作者
(35) Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells, MATERIALS RESEARCH EXPRESS, 2019, 通讯作者
(36) Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 h, JOURNAL OF SEMICONDUCTORS, 2019, 通讯作者
(37) Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence, Nanoscale Research Letters, 2019, 通讯作者
(38) Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes, SUPERLATTICES AND MICROSTRUCTURES, 2019, 通讯作者
(39) Suppression of optical feld leakage in GaN-based green laser diode using graded-indium n-InxGa1-xN lower waveguide, Superlattices and Microstructures, 2019, 通讯作者
(40) The compensation role of deep defects in the electric properties of lightly Si-doped GaN, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 
(41) Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics, JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 通讯作者
(42) Effect of Mg doping concentration of electron blocking layer on the performance of GaN-based laser diodes, APPLIED PHYSICS B-LASERS AND OPTICS, 2019, 
(43) Enhancing the performance of GaN based LDs by using low In content InGaN instead of GaN as lower waveguide layer, OPTICS AND LASER TECHNOLOGY, 2019, 
(44) Suppression of electron and hole overflow in gan-based near-ultraviolet laser diodes, CHINESE PHYSICS B, 2018, 通讯作者
(45) Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations, OPTICAL MATERIALS, 2018, 
(46) Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers, IEEE PHOTONICS JOURNAL, 2018, 通讯作者
(47) Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption, APPLIED SURFACE SCIENCE, 2018, 通讯作者
(48) Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in ingan/gan multi-quantum wells, OPTICS EXPRESS, 2018, 通讯作者
(49) Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 <= x <= 0.104), SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(50) Resistivity reduction of low temperature grown p-al0.09ga0.91n by suppressing the incorporation of carbon impurity, AIP ADVANCES, 2018, 
(51) Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures, 中国物理B:英文版, 2018, 第 3 作者
(52) Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of ingan/gan multiple quantum wells, OPTICS EXPRESS, 2018, 通讯作者
(53) Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN, NANOMATERIALS, 2018, 通讯作者
(54) Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN, NANOMATERIALS, 2018, 通讯作者
(55) Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs, SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(56) Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms, SUPERLATTICES AND MICROSTRUCTURES, 2018, 
(57) Deep levels induced optical memory effect in thin InGaN film, AIP ADVANCES, 2018, 
(58) Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer, SUPERLATTICES AND MICROSTRUCTURES, 2018, 
(59) Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells, MATERIALS RESEARCH EXPRESS, 2018, 通讯作者
(60) Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide, JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 通讯作者
(61) Performance enhancement of the gan-based laser diode by using an unintentionally doped gan upper waveguide, JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 通讯作者
(62) The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2018, 通讯作者
(63) Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells, IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 通讯作者
(64) The residual C concentration control for low temperature growth p-type GaN, CHINESE PHYSICS B, 2017, 通讯作者
(65) Electroluminescence property improvement by adjusting quantum wells' position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes, AIP ADVANCES, 2017, 
(66) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, CHINESE PHYSICS B, 2017, 
(67) Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact, APPLIED OPTICS, 2017, 通讯作者
(68) Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region, OPTICS EXPRESS, 2017, 
(69) Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes, JOURNAL OF SEMICONDUCTORS, 2017, 通讯作者
(70) Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3, SUPERLATTICES AND MICROSTRUCTURES, 2017, 
(71) Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes, Phys. Status Solidi A, 2017, 第 2 作者
(72) Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement, MATERIALS RESEARCH EXPRESS, 2017, 通讯作者
(73) Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold, APPLIED OPTICS, 2017, 
(74) Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes, IEEE PHOTONICS JOURNAL, 2017, 通讯作者
(75) Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD, MATERIALS TECHNOLOGY, 2017, 
(76) Analysis of localization effect in blue-violet light mitting InGaN/GaN multiple quantum wells with different well widths, Chinese Physics B, 2017, 通讯作者
(77) Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination, JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 通讯作者
(78) Performance Improvement of GaN-Based Violet Laser Diodes, Performance Improvement of GaN-Based Violet Laser Diodes, CHINESE PHYSICS LETTERS, 2017, 通讯作者
(79) Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide, 中国物理B:英文版, 2017, 第 2 作者
(80) New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode, OPTICS AND LASER TECHNOLOGY, 2017, 通讯作者
(81) Different annealing temperature suitable for different Mg doped P-GaN, SUPERLATTICES AND MICROSTRUCTURES, 2017, 
(82) Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes, SCIENTIFIC REPORTS, 2017, 
(83) Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials, CHINESE PHYSICS B, 2017, 通讯作者
(84) Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer, JOURNAL OF CRYSTAL GROWTH, 2017, 通讯作者
(85) Suppression of optical field leakage to GaN substrate in GaN-based green laser diode, SUPERLATTICES AND MICROSTRUCTURES, 2017, 通讯作者
(86) Different influence of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes, Chinese Physics B, 2017, 通讯作者
(87) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC, CHINESE PHYSICS B, 2016, 第 3 作者
(88) Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC, CHEMICAL PHYSICS LETTERS, 2016, 
(89) Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 
(90) Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films, CHINESE PHYSICS B, 2016, 通讯作者
(91) XPS study of impurities in Si-doped AlN film, SURFACE AND INTERFACE ANALYSIS, 2016, 
(92) Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 
(93) Comparative study of the differential resistance of GaAs- and GaN-based laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 通讯作者
(94) Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 通讯作者
(95) Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 通讯作者
(96) Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 通讯作者
(97) Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses, VACUUM, 2016, 
(98) Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathode, Journal of vacuum science & technology b, 2016, 第 3 作者
(99) Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity, IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 通讯作者
(100) GaN high electron mobility transistors with AlInN back barriers, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 
(101) Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes, SUPERLATTICES AND MICROSTRUCTURES, 2016, 通讯作者
(102) The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes, AIP ADVANCES, 2016, 
(103) Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells, SUPERLATTICES AND MICROSTRUCTURES, 2016, 
(104) The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 
(105) Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 
(106) Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes, OPTICS EXPRESS, 2016, 
(107) Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes, CHINESE OPTICS LETTERS, 2016, 通讯作者
(108) Differential resistance of GaN-based laser diodes with and without polarization effect, APPLIED OPTICS, 2015, 
(109) Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression, CHINESE PHYSICS B, 2015, 通讯作者
(110) Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN, CHINESE PHYSICS B, 2015, 
(111) Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 2 作者
(112) A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current, SUPERLATTICES AND MICROSTRUCTURES, 2015, 
(113) Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers, JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 
(114) Growth condition optimizaiton and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure, Chinese Physics B, 2015, 通讯作者
(115) Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness, JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 
(116) The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 
(117) Effect of localization states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2015, 第 2 作者
(118) Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells, OPTICS EXPRESS, 2015, 
(119) Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage, CHINESE PHYSICS B, 2015, 通讯作者
(120) Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode, CHINESE PHYSICS B, 2015, 通讯作者
(121) Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer, CHINESE PHYSICS B, 2015, 通讯作者
(122) The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters, SUPERLATTICES AND MICROSTRUCTURES, 2015, 
(123) Utilization of polarization-inverted AlInGaN or relatively thinner AlGaN electron blocking layer in InGaN-based blue–violet laser diodes, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 第 2 作者
(124) Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si(111) substrate, CHINESE PHYSICS B, 2015, 通讯作者
(125) Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness, JOURNAL OF APPLIED PHYSICS, 2015, 
(126) Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films, JOURNAL OF APPLIED PHYSICS, 2014, 
(127) Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 2 作者
(128) Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 第 2 作者
(129) Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition, THIN SOLID FILMS, 2014, 
(130) Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p-i-n avalanche photodiodes, CHINESE PHYSICS B, 2014, 通讯作者
(131) The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN, JOURNAL OF APPLIED PHYSICS, 2014, 
(132) Performance comparison of front- and back-illuminated modes of the AlGaN-based p-i-n solar-blind ultraviolet photodetectors, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 第 2 作者
(133) Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells, CHINESE PHYSICS B, 2014, 通讯作者
(134) Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes, OPTICS EXPRESS, 2014, 
(135) Effects of quantum well number on spectral response of InGaN/GaN multiple quantum well solar cells, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 
(136) Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 
(137) A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe, CHINESE PHYSICS LETTERS, 2013, 通讯作者
(138) Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness, JOURNAL OF APPLIED PHYSICS, 2013, 
(139) Influence of growth condicitons on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition, 物理学报, 2013, 通讯作者
(140) Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime, CHINESE PHYSICS B, 2013, 通讯作者
(141) The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells, CHINESE PHYSICS B, 2013, 通讯作者
(142) The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN GaN Solar Cells, CHINESE PHYSICS LETTERS, 2013, 通讯作者
(143) Influence of different annealing temperature and atmosphere on the Ni-Au Ohmic contact to p-GaN, ACTA PHYSICA SINICA, 2013, 通讯作者
(144) Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 
(145) Positive and negative effects of oxygen in thermal annealing of p-type GaN, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 
(146) Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer, JOURNAL OF APPLIED PHYSICS, 2012, 
(147) Quadratic electro-optic effect in GaN-based materials, APPLIED PHYSICS LETTERS, 2012, 
(148) Distribution of electric field and design of devices in GaN avalanche photodiodes, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2012, 通讯作者
(149) Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 
(150) Effect of light Si-doping on the near-band-edge emissions in high quality GaN, JOURNAL OF APPLIED PHYSICS, 2012, 
(151) Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes, APPLIED PHYSICS LETTERS, 2012, 
(152) A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector, JOURNAL OF APPLIED PHYSICS, 2011, 
(153) Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 
(154) Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector, JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 
(155) Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors, CHINESE PHYSICS B, 2010, 通讯作者
(156) An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells, JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 
(157) Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector, Acta Physica Sinica, 2010, 通讯作者
(158) Stable multiplication gain in GaN p-i-n avalanche photodiodes with larger device area, Journal of Physics D: Applied Physics, 2009, 通讯作者
(159) Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films, APPLIED PHYSICS LETTERS, 2009, 
(160) Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition, JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 
(161) Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector, ACTA PHYSICA SINICA, 2009, 通讯作者
(162) An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors, CHINESE PHYSICS LETTERS, 2009, 通讯作者
(163) Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2008, 
(164) Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells, CHINESE PHYSICS LETTERS, 2008, 通讯作者
(165) A GaN photodetector integrated structure for wavelength characterization of ultraviolet light, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 
(166) Investigation of responsivity decreasing with rising bias voltage in a gan schottky barrier photodetector, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 
(167) Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type gan?, JOURNAL OF APPLIED PHYSICS, 2007, 
(168) Influence of defects in n(-)-gan layer on the responsivity of schottky barrier ultraviolet photodetectors, APPLIED PHYSICS LETTERS, 2007, 
(169) The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer, JOURNAL OF CRYSTAL GROWTH, 2007, 
(170) Role of edge dislocation in enhancing the yellow luminescence of n-type GaN, 2006, 第 1 作者
(171) Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition, JOURNAL OF CRYSTAL GROWTH, 2006, 
(172) Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films, APPLIED PHYSICS LETTERS, 2006, 
(173) Effects of edge dislocations and intentional si doping on the electron mobility of n-type gan films, APPLIED PHYSICS LETTERS, 2006, 
(174) Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition, APPLIED SURFACE SCIENCE, 2006, 
发表著作
( 1 ) 《先进焦平面技术导论》第四章, Introduction to Advanced Focal Plane Arrays, 国防工业出版社, 2011-01, 第 1 作者
( 2 ) 《光电二极管》第十四章, Photodiodes - World Activities in 2011, Intech-Open Access Publisher, 2011-08, 第 1 作者

科研活动

   
科研项目
( 1 ) GaN基光电子材料与器件的基础问题, 负责人, 国家任务, 2010-01--2013-12
( 2 ) 太阳盲GaN基紫外探测器阵列, 负责人, 国家任务, 2007-12--2010-10
( 3 ) 位错和点缺陷对日盲型AlGaN紫外探测器性能的影响机理, 负责人, 国家任务, 2008-01--2010-12
( 4 ) 纳米微结构InGaN太阳能电池的MOCVD生长与器件技术, 负责人, 国家任务, 2011-01--2014-12
( 5 ) 针对绿色激光器的InGaN量子点生长与性能调控, 负责人, 国家任务, 2014-01--2017-12
( 6 ) GaN基光电子材料与器件, 负责人, 中国科学院计划, 2015-01--2017-12
( 7 ) AlGaN基紫外双色探测器, 负责人, 国家任务, 2016-01--2019-12
( 8 ) 面向激光显示的三基色半导体激光器(LD)关键材料与技术基础研究, 负责人, 国家任务, 2016-07--2020-12
( 9 ) AlGaN材料快陥凋控及日盲紫外雪崩探測器研究, 负责人, 中国科学院计划, 2016-01--2020-12
( 10 ) GaN同质衬底上量子阱外延生长及p型掺杂技术研究, 负责人, 国家任务, 2016-01--2020-12
( 11 ) GaN基绿光激光器芯片研制, 负责人, 地方任务, 2016-07--2019-12
( 12 ) GaN基大功率紫外(<360纳米)激光器, 负责人, 国家任务, 2021-01--2025-12
( 13 ) GaN基光电子材料与器件, 负责人, 国家任务, 2019-01--2021-12
( 14 ) GaN基大功率紫外激光器, 负责人, 地方任务, 2021-08--2023-07
参与会议
(1)GaN-based Materials and Laser Diodes   国际显示会议   2020-06-03
(2)GaN基材料与激光器   第三届全国宽禁带半导体学术会议   2019-10-17
(3)GaN基材料与激光器   第三届微纳光学技术与应用交流会   2019-09-20
(4)GaN基材料与光电子器件   中国材料大会   2019-07-13
(5)GaN基材料与紫外光光电子器件   第六届海峡两岸宽能隙半导体会议   2018-10-26
(6)GaN基光电子材料与器件   第十五届全国MOCVD学术会议   2018-08-22
(7)GaN基材料与激光器   全国第18次光纤通信暨第19届集成光学学术大会   2018-07-14
(8)GaN基材料生长与器件技术   第十三届全国激光技术与光电子学学术会议   2018-03-10
(9)GaN基材料与器件技术   2017年第二届宽禁带半导体会议    2017-08-10
(10)GaN基材料技术与器件物理   2017年第21届全国半导体物理会议    2017-07-18
(11)GaN基光电子材料与器件   2017年第十二届激光技术与光电子学会议    2017-03-14
(12)GaN基材料技术与器件物理   第十四届全国MOCVD会议   赵德刚   2016-08-16
(13)GaN基材料生长与器件技术   第一届全国宽禁带半导体学术及应用技术会议   赵德刚   2015-10-30
(14)GaN基光电子材料与器件   第十四届全国固体薄膜学术会议   赵德刚   2015-07-29
(15)GaN基光电子材料与器件   第六届全国信息光学与光子学学术会议   赵德刚   2014-07-22
(16)GaN基材料生长与光电子器件   第十三届全国MOCVD会议   赵德刚   2014-05-06