基本信息
肖红领  男  硕导  中国科学院半导体研究所
电子邮件: hlxiao@red.semi.ac.cn
通信地址: 北京海淀清华东路甲35号
邮政编码: 100083

招生信息

   
招生专业
080501-材料物理与化学
080903-微电子学与固体电子学
招生方向
氮化物材料生长与器件研究
过渡族金属氮化物
MOCVD装备

教育背景

2002-09--2005-06   中科院半导体所   博士
1999-09--2002-06   广西大学   硕士
1995-09--1999-06   长沙理工大学   本科

工作经历

   
工作简历
2015-01~现在, 中科院半导体所, 研究员
2007-09~2014-12,中科院半导体所, 副研究员
2005-07~2007-09,中科院半导体所, 助理研究员
2002-09~2005-06,中科院半导体所, 博士
1999-09~2002-06,广西大学, 硕士
1995-09~1999-06,长沙理工大学, 本科
社会兼职
2012-01-01-今,中国电子学会青年委员会, 委员

教授课程

半导体异质结构材料与应用
集成电路中的半导体材料与工艺
宽禁带半导体材料制备与应用

专利与奖励

   
奖励信息
(1) 高性能GaN外延材料, 二等奖, 省级, 2012
专利成果
( 1 ) MOSFET器件, 2019, 第 4 作者, 专利号: 201910175096.8

( 2 ) 一种用于薄膜材料生长设备加热托盘的固定控制装置, 2017, 第 3 作者, 专利号: 201710728515.7

( 3 ) 用于金属有机化合物化学气相沉积设备反应室的进气顶盘, 2015, 第 3 作者, 专利号: 201510002676.9

出版信息

   
发表论文
(1) Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate, Japanese Journal of Applied Physics, 2021, 通讯作者
(2) Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism, Phys. Status Solidi A, 2021, 第 2 作者
(3) Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High- Linearity Applications, Phys. Status Solidi A, 2021, 第 7 作者
(4) Simulation Study of Performance Degradation in β-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, ECS Journal of Solid State Science and Technology, 2021, 第 8 作者
(5) The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT, Micromachines, 2021, 第 8 作者
(6) A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches, Optics Communications, 2021, 第 5 作者
(7) Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs, Journal of Semiconductors, 2021, 第 7 作者
(8) Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film:phenomena and mechanism, Semiconductor Science and Technology, 2020, 第 3 作者
(9) Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor, Japanese Journal of Applied Physics, 2020, 第 8 作者
(10) Design and Fabrication of 4H-SiC MOSFETs with Optimized JFET and P-Body Design, Materials Science Forum, 2020, 第 4 作者
(11) 1700V 34m 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 3 作者
(12) Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET, IEEE ELECTRON DEVICE LETTERS, 2019, 第 5 作者
(13) Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures, OPTICS EXPRESS, 2018, 第 4 作者
(14) Simulation and Optimization of Temperature Distribution in Induction Heating Reactor, Journal of Nanoscience and Nanotechnology, 2018, 第 5 作者
(15) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, CHIN. PHYS. LETT, 2018, 第 5 作者
(16) Theoretical analysis of induction heating in high-temperature epitaxial growth system, AIP ADVANCES, 2018, 第 6 作者
(17) Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer, Journal of Nanoscience and Nanotechnology, 2018, 第 4 作者
(18) Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer, Journal of Nanoscience and Nanotechnology, 2018, 第 7 作者
(19) Gate Leakage and Breakdown Characteristics ofAlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer, Nanoscience and Nanotechnology Letters, 2018, 第 7 作者
(20) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, Chinese Physics Letters, 2017, 第 5 作者
(21) Fast electrical detection of carcinoembryonic antigen (CEA) based on AlGaN/GaN high electron mobility transistor aptasensor, Chinese Physics Letters, 2017, 第 5 作者
(22) Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance, Superlattices and Microstructures, 2017, 第 3 作者
(23) Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases, Journal of Applied Physics, 2016, 第 5 作者
(24) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, Phys. Status Solidi A, 2015, 第 3 作者
(25) InGaN GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77, Chinese Physics Letters, 2015, 第 2 作者
(26) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, Chinese Physics Letters, 2015, 第 3 作者
(27) Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation, Journal of Applied Physics, 2014, 第 3 作者
(28) High voltage AlGaN/GaN based Lateral Schottky Barrier Diodes, Phys. Status Solidi A, 2014, 第 3 作者
(29) Analysis of Transconductance Characteristic of AlGaN/GaN HEMTs with Graded AlGaN layer, The European Physical Journal Applied Physics, 2014, 第 3 作者
(30) High performance AlGaN/GaN power switch with Si3N4 Insulation, Eur.Phys.J.Appl.Phys, 2013, 第 3 作者
(31) Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as buffer layer, Journal of Alloys and Compounds, 2013, 第 3 作者
(32) Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width, Journal of Applied Physics, 2013, 第 3 作者
(33) Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell, Physica B, 2013, 通讯作者
(34) Growth and Fabrication of InGaN/ GaN Multi-Quantum Well Solar Cells on Si(111) Substrates, Chinese Physics Letters, 2013, 通讯作者
(35) Enhanced Performance of InGaN/GaN Multiple Quantum Well Solar Cells with Patterned Sapphire Substrate, Journal of Semiconductors, 2013, 通讯作者

科研活动

   
科研项目
( 1 ) 全光谱InGaN太阳能电池, 负责人, 地方任务, 2016-01--2017-12
( 2 ) 高速低损耗GaN基功率开关器件用外延材料, 负责人, 国家任务, 2014-01--2016-12
( 3 ) 3-4英寸GaN基微电子材料专用MOCVD 装备研制, 参与, 中国科学院计划, 2011-01--2013-12
( 4 ) 4英寸AlGaN/GaN****, 参与, 国家任务, 2016-01--2018-12
( 5 ) 高温MOCVD****, 参与, 国家任务, 2014-01--2016-12
( 6 ) 核高基国家科技重大专项(Ku***), 参与, 国家任务, 2009-01--2012-12
( 7 ) 高质量GaN基HEMT材料研究, 负责人, 国家任务, 2016-11--2018-10
( 8 ) GaN基HEMT材料氢效应研究, 负责人, 国家任务, 2019-01--2020-12
( 9 ) GaN同质外延材料生长研究, 参与, 国家任务, 2016-12--2020-12