基本信息
肖红领  男  硕导  中国科学院半导体研究所
电子邮件: hlxiao@red.semi.ac.cn
通信地址: 北京海淀清华东路甲35号
邮政编码: 100083

招生信息

   
招生专业
080501-材料物理与化学
080903-微电子学与固体电子学
招生方向
氮化物材料生长与器件研究
过渡族金属氮化物
MOCVD装备

教育背景

2002-09--2005-06   中科院半导体所   博士
1999-09--2002-06   广西大学   硕士
1995-09--1999-06   长沙理工大学   本科

工作经历

   
工作简历
2015-01~现在, 中科院半导体所, 研究员
2007-09~2014-12,中科院半导体所, 副研究员
2005-07~2007-09,中科院半导体所, 助理研究员
2002-09~2005-06,中科院半导体所, 博士
1999-09~2002-06,广西大学, 硕士
1995-09~1999-06,长沙理工大学, 本科
社会兼职
2012-01-01-今,中国电子学会青年委员会, 委员

教授课程

半导体异质结构材料与应用
集成电路中的半导体材料与工艺
宽禁带半导体材料制备与应用

专利与奖励

   
奖励信息
(1) 高性能GaN外延材料, 二等奖, 省级, 2012
专利成果
( 1 ) 功率放大电路及集成电路, 2022, 第 5 作者, 专利号: CN114244286A

( 2 ) 应用于MMIC中的紧凑型电容、电阻并联结构, 2022, 第 5 作者, 专利号: CN114121930A

( 3 ) 晶圆的室温等静压金属键合方法, 2022, 第 3 作者, 专利号: CN111370339B

( 4 ) 抑制GaN衬底在外延生长过程中背面分解的方法, 2020, 第 3 作者, 专利号: CN111463109A

( 5 ) 阶梯型混合栅p-GaN氮化镓基晶体管结构及制作方法, 2020, 第 5 作者, 专利号: CN111415980A

( 6 ) 改善GaN HEMT器件散热性能的结构及布局, 2020, 第 6 作者, 专利号: CN111384163A

( 7 ) 混合栅p-GaN增强型氮化镓基晶体管结构及制作方法, 2020, 第 5 作者, 专利号: CN111370472A

( 8 ) 一种增强型GaN基高电子迁移率晶体管材料结构, 2020, 第 3 作者, 专利号: CN110767747A

( 9 ) 一种在位生长介质层作为帽层的HEMT结构及其制作方法, 2020, 第 3 作者, 专利号: CN110767746A

( 10 ) 一种在硅衬底上生长氮化镓薄膜的方法, 2020, 第 3 作者, 专利号: CN110752146A

( 11 ) 一种在导电SiC衬底上生长GaN外延材料的方法及器件, 2020, 第 4 作者, 专利号: CN110739207A

( 12 ) 含有组分渐变高阻缓冲层的双异质结HEMT及其制作方法, 2019, 第 6 作者, 专利号: CN109638066A

( 13 ) 具有n-p-n结构背势垒的高电子迁移率晶体管及其制作方法, 2019, 第 7 作者, 专利号: CN109638074A

( 14 ) 可调节的感应线圈装置, 2019, 第 5 作者, 专利号: CN109600873A

( 15 ) 托盘支撑和固定装置, 2019, 第 6 作者, 专利号: CN109536928A

( 16 ) 旋转托盘固定装置, 2019, 第 6 作者, 专利号: CN109487239A

( 17 ) 一种InGaN太阳能电池结构, 2018, 第 1 作者, 专利号: CN108269877A

( 18 ) 一种混合极性InGaN太阳能电池结构, 2018, 第 1 作者, 专利号: CN108269866A

( 19 ) 一种氮面极性InGaN太阳能电池结构, 2018, 第 1 作者, 专利号: CN108198893A

( 20 ) GaN衬底的表面处理方法, 2018, 第 3 作者, 专利号: CN107564799A

( 21 ) 加热托盘的固定控制装置及其设备, 2017, 第 3 作者, 专利号: CN107523807A

( 22 ) 一种基于电磁感应的加热装置, 2017, 第 6 作者, 专利号: CN107475691A

( 23 ) 用于薄膜材料生长的感应加热装置, 2017, 第 6 作者, 专利号: CN107326343A

( 24 ) 用于肿瘤标志物检测的核酸适配子传感器及其制备方法, 2017, 第 5 作者, 专利号: CN107064260A

( 25 ) 纵向调制掺杂氮化镓基场效应晶体管结构及其制作方法, 2017, 第 5 作者, 专利号: CN106601790A

( 26 ) 双异质氮化镓基场效应晶体管结构及制作方法, 2016, 第 5 作者, 专利号: CN106024881A

( 27 ) 一种氮化镓基绝缘栅双极晶体管, 2016, 第 5 作者, 专利号: CN205428936U

( 28 ) 一种垂直型氮化镓功率开关器件, 2016, 第 2 作者, 专利号: CN205231071U

( 29 ) 一种垂直型氮化镓功率开关器件及其制备方法, 2016, 第 2 作者, 专利号: CN105470294A

( 30 ) 一种氮化镓基绝缘栅双极晶体管制备方法及其产品, 2016, 第 5 作者, 专利号: CN105374860A

( 31 ) 一种In x Al 1-x N/AlN复合势垒层氮化镓基异质结高电子迁移率晶体管结构, 2015, 第 3 作者, 专利号: CN204441290U

( 32 ) 氮化铟沟道层氮化镓基高电子迁移率晶体管结构, 2015, 第 4 作者, 专利号: CN204441292U

( 33 ) 一种In x Al 1-x N/AlN复合势垒层氮化镓基异质结高电子迁移率晶体管结构, 2015, 第 3 作者, 专利号: CN104505400A

( 34 ) 氮化铟沟道层氮化镓基高电子迁移率晶体管结构, 2015, 第 4 作者, 专利号: CN104505402A

( 35 ) 用于金属有机化合物化学气相沉积设备反应室的进气顶盘, 2015, 第 3 作者, 专利号: CN104498905A

( 36 ) 基于GaN基异质结构的二极管结构及制作方法, 2014, 第 3 作者, 专利号: CN103904134A

( 37 ) 源输送混合比可调气路装置, 2014, 第 2 作者, 专利号: CN103882409A

( 38 ) 密封传动装置, 2014, 第 3 作者, 专利号: CN103775649A

( 39 ) 具势垒层的氮化镓基高电子迁移率晶体管结构及制作方法, 2013, 第 4 作者, 专利号: CN103123934A

( 40 ) 具有复合空间层的氮化镓场效应晶体管结构及制作方法, 2013, 第 4 作者, 专利号: CN103117304A

( 41 ) 铝镓氮做高阻层的双异质结氮化镓基HEMT及制作方法, 2013, 第 4 作者, 专利号: CN102931230A

( 42 ) 双异质结构氮化镓基高电子迁移率晶体管结构及制作方法, 2012, 第 3 作者, 专利号: CN102842613A

( 43 ) 氮化镓基高电子迁移率晶体管及制作方法, 2012, 第 4 作者, 专利号: CN102427084A

( 44 ) Ⅲ-氮化物半导体材料pn结的制作方法, 2011, 第 5 作者, 专利号: CN102054673A

( 45 ) 用于金属有机物化学沉积设备的气体分配装置, 2010, 第 4 作者, 专利号: CN101812674A

( 46 ) 用于金属有机物化学沉积设备的气路装置, 2010, 第 4 作者, 专利号: CN101812671A

( 47 ) 用于金属有机物化学沉积设备的扇形进气喷头, 2010, 第 4 作者, 专利号: CN101812673A

( 48 ) 用于金属有机物化学沉积设备的衬托盘及其制作工艺, 2010, 第 5 作者, 专利号: CN101811871A

( 49 ) 在硅衬底上生长的氮化镓薄膜结构及其生长方法, 2010, 第 4 作者, 专利号: CN101515543B

( 50 ) 在大失配衬底上生长表面无裂纹的GaN薄膜的方法, 2010, 第 7 作者, 专利号: CN101807523A

( 51 ) 金属有机物化学沉积设备的反应室, 2010, 第 4 作者, 专利号: CN101748377A

( 52 ) p-i-n型InGaN量子点太阳能电池结构及其制作方法, 2010, 第 3 作者, 专利号: CN101752444A

( 53 ) 用于金属有机物化学沉积设备的加热装置, 2010, 第 4 作者, 专利号: CN101736311A

( 54 ) 制备增强型铝镓氮/氮化镓高电子迁移率晶体管的方法, 2010, 第 3 作者, 专利号: CN101740384A

( 55 ) 一种制备稀磁半导体薄膜的方法, 2009, 第 4 作者, 专利号: CN101471244A

( 56 ) 氮化镓基高电子迁移率晶体管结构, 2009, 第 3 作者, 专利号: CN101399284A

( 57 ) 倒装双结铟镓氮太阳能电池结构, 2009, 第 3 作者, 专利号: CN101373798A

( 58 ) 氮化镓基双异质结场效应晶体管结构及制作方法, 2008, 第 4 作者, 专利号: CN101266999A

( 59 ) 生长氮化铟单晶薄膜的方法, 2008, 第 2 作者, 专利号: CN101230487A

( 60 ) 单结铟镓氮太阳能电池结构及制作方法, 2008, 第 2 作者, 专利号: CN101232050A

( 61 ) 氮化镓基异质结场效应晶体管结构及制作方法, 2008, 第 5 作者, 专利号: CN101140947A

( 62 ) 一种对气体传感器或半导体器件性能进行测试的系统, 2008, 第 8 作者, 专利号: CN101140252A

( 63 ) 宽带隙氮化镓基异质结场效应晶体管结构及制作方法, 2008, 第 4 作者, 专利号: CN101136432A

( 64 ) 用MBE外延InAlGaN单晶薄膜的方法, 2008, 第 5 作者, 专利号: CN101114584A

( 65 ) 碳化硅衬底氮化镓高电子迁移率晶体管及制作方法, 2007, 第 6 作者, 专利号: CN101005034A

( 66 ) 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法, 2006, 第 4 作者, 专利号: CN1741290A

( 67 ) 一种在硅衬底上生长高质量氮化铝的方法, 2005, 第 4 作者, 专利号: CN1707753A

( 68 ) 生长高结晶质量氮化铟单晶外延膜的方法, 2005, 第 1 作者, 专利号: CN1704507A

出版信息

   
发表论文
(1) Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate, JOURNAL OF SEMICONDUCTORS, [[[2013]]], 
(2) Optimization of Finite-Zone Implanted Edge Termination for beta-Ga2O3 SBD, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 第 4 作者
(3) Comparative Study on Characteristics of AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 第 7 作者
(4) A novel structure to enable low local electric field and high on-state current in GaN photoconductive semiconductor switches, OPTICS COMMUNICATIONS, 2021, 第 5 作者
(5) The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT, MICROMACHINES, 2021, 第 8 作者
(6) Simulation Study of Performance Degradation in β-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, Journal of Solid State Science and Technology, 2021, 
(7) Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs, Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs, 半导体学报:英文版, 2021, 第 7 作者
(8) Abnormal increase of 2DEG density in AlGaN/GaN HEMT grown on free-standing GaN substrate, JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 通讯作者
(9) Simulation of a Parallel Dual-Metal-Gate Structure for AlGaN/GaN High-Electron-Mobility Transistor High-Linearity Applications, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 7 作者
(10) A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications, ELECTRONICS, 2021, 第 8 作者
(11) Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 第 8 作者
(12) Room Temperature 2DEG Mobility Above 2350 cm(2)/V center dot s in AlGaN/GaN HEMT Grown on GaN Substrate, JOURNAL OF ELECTRONIC MATERIALS, 2021, 通讯作者
(13) Buckling on Fe-Doped AlGaN/GaN High Electron Mobility Transistor Films after Laser Liftoff Process: Phenomena and Mechanism, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 第 2 作者
(14) Design and Fabrication of 4H-SiC MOSFETs with Optimized JFET and P-Body Design, Materials Science Forum, 2020, 
(15) Comparative Study of SiC Planar MOSFETs With Different p-Body Designs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 第 6 作者
(16) Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor, JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 第 8 作者
(17) Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 第 3 作者
(18) 1700V 34m Omega 4H-SiC MOSFET With Retrograde Doping in Junction Field-Effect Transistor Region, 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019, 第 3 作者
(19) Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET, IEEE Electron Device Letters, 2019, 
(20) Design and Fabrication of 3300V 100m Omega 4H-SiC MOSFET with Stepped p-body Structure, 2019 16TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2019 INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS), 2019, 第 6 作者
(21) Simulation and Optimization of Temperature Distribution in Induction Heating Reactor, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 5 作者
(22) Theoretical analysis of induction heating in high-temperature epitaxial growth system, AIP ADVANCES, 2018, 第 6 作者
(23) Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 7 作者
(24) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, CHINESE PHYSICS LETTERS, 2018, 第 5 作者
(25) X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 3 作者
(26) Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 第 4 作者
(27) Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer, NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 第 7 作者
(28) Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures, OPTICS EXPRESS, 2018, 第 4 作者
(29) Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling, 中国物理快报:英文版, 2018, 第 5 作者
(30) Fast electrical detection of carcinoembryonic antigen (CEA) based on AlGaN/GaN high electron mobility transistor aptasensor, Chinese Physics Letters, 2017, 
(31) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, 中国物理快报:英文版, 2017, 第 5 作者
(32) Fast Electrical Detection of Carcinoembryonic Antigen Based on AlGaN/GaN High Electron Mobility Transistor Aptasensor, CHINESE PHYSICS LETTERS, 2017, 第 5 作者
(33) Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors, CHINESE PHYSICS LETTERS, 2017, 第 5 作者
(34) Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, Fast Electrical Detection of Carcinoembryonic Antigen Based on A1GaN/GaN High Electron Mobility Transistor Aptasensor, 中国物理快报:英文版, 2017, 第 5 作者
(35) Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者
(36) Theoretical investigations on the N-polar GaN/AlxGa1-xN/GaN heterostructures: Considering the existence of both two-dimensional hole and electron gases, JOURNAL OF APPLIED PHYSICS, 2016, 第 5 作者
(37) InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, 中国物理快报:英文版, 2015, 第 2 作者
(38) InGaN GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77, Chinese Physics Letters, 2015, 第 1 作者
(39) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, Chin. phys. lett., 2015, 第 4 作者
(40) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors, CHINESE PHYSICS LETTERS, 2015, 第 4 作者
(41) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, Phys. status solidi a, 2015, 第 3 作者
(42) A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor, Chin. phys. lett., 2015, 第 4 作者
(43) Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition, ACTA PHYSICA SINICA, 2015, 第 7 作者
(44) A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor, CHINESE PHYSICS LETTERS, 2015, 第 4 作者
(45) In_xGa_(1-x)N/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, CHINESE PHYSICS LETTERS, 2015, 第 2 作者
(46) Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 第 3 作者
(47) Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/A1N/GaN Heterojunction Field Effect Transistors, Chinese Physics Letters, 2015, 第 4 作者
(48) InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%, Chin. phys. lett., 2015, 第 2 作者
(49) 金属有机物化学气相沉积生长GaN薄膜的室温热电特性研究, Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition, ACTA PHYSICA SINICA, 2015, 第 7 作者
(50) Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 3 作者
(51) Growth and characterization of InGaN back barrier HEMTs structure with a compositionally step-graded AlGaN layer, Journal of Semiconductors, 2014, 第 3 作者
(52) AIGaN/AIN/GaN HEMT结构2DEG的光致发光谱, Photoluminescence of 2DEG in AlGaN/AlN/GaN HEMT Structures, 半导体技术, 2014, 第 3 作者
(53) High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes, CHINESE PHYSICS LETTERS, 2014, 第 3 作者
(54) Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 第 3 作者
(55) Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation, JOURNAL OF APPLIED PHYSICS, 2014, 第 5 作者
(56) Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor, JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 第 5 作者
(57) Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell, Physica B: Physics of Condensed Matter, 2013, 第 2 作者
(58) High performance AlGaN/GaN power switch with Si3N4 insulation, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 3 作者
(59) Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width, JOURNAL OF APPLIED PHYSICS, 2013, 第 3 作者
(60) Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN as buffer layers, JOURNAL OF CRYSTAL GROWTH, 2013, 第 3 作者
(61) AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 第 3 作者
(62) The Valence Band Offset of an Al0.17Ga0.83NGaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy, CHINESE PHYSICS LETTERS, 2013, 第 3 作者
(63) Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors, JOURNAL OF SEMICONDUCTORS, 2013, 第 3 作者
(64) The Growth and Fabrication of InGaN_GaN Multi-Quantum Well Solar Cells on Si(111) Substrates, CHINESE PHYSICS LETTERS, 2013, 通讯作者
(65) Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell, PHYSICA B-CONDENSED MATTER, 2013, 通讯作者
(66) High performance AlGaNGaN power switch with Si3N4 Insulation, The european physical journal applied physics, 2013, 第 3 作者
(67) The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD, JOURNAL OF SEMICONDUCTORS, 2013, 通讯作者
(68) Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer, JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 第 3 作者
(69) A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures, APPLIED PHYSICS LETTERS, 2012, 第 3 作者
(70) Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures, JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 第 3 作者
(71) InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage*, InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage*, 中国物理:英文版, 2011, 第 3 作者
(72) Ingan/gan multiple quantum well solar cells with an enhanced open-circuit voltage, CHINESE PHYSICS B, 2011, 第 3 作者
(73) Comparison of as-grown and annealed gan/ingan:mg samples, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 3 作者
(74) Theoretical study on inxga1-xn/gan quantum dots solar cell, PHYSICA B-CONDENSED MATTER, 2011, 第 4 作者
(75) Effect of aln buffer thickness on gan epilayer grown on si(1 1 1), MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2011, 第 4 作者
(76) The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure, Applied physics a: materials science and processing, 2011, 第 4 作者
(77) Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition, CHINESE PHYSICS LETTERS, 2011, 第 3 作者
(78) Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer, Journal of crystal growth, 318 (1): 464-467, 2011, 
(79) Simulation of electrical properties of In_xAl_(1-x)N/AlN/GaN high electron mobility transistor structure, Simulation of electrical properties of In_xAl_(1-x)N/AlN/GaN high electron mobility transistor structure, 半导体学报, 2011, 第 3 作者
(80) Behavioural investigation of inn nanodots by surface topographies and phase images, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 3 作者
(81) Growth of 2 pm Crack-Free GaN on Si(lll) Substrates by Metal Organic Chemical Vapor Deposition, Chinese Physics Letters, 2011, 第 3 作者
(82) Surface characterization of algan grown on si (111) substrates, JOURNAL OF CRYSTAL GROWTH, 2011, 第 3 作者
(83) High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, 半导体学报, 2011, 第 6 作者
(84) An investigation on inxga1-xn/gan multiple quantum well solar cells, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 第 3 作者
(85) Influence of electric field on persistent photoconductivity in unintentionally doped n-type gan, APPLIED PHYSICS LETTERS, 2011, 第 3 作者
(86) High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system, JOURNAL OF SEMICONDUCTORS, 2011, 第 6 作者
(87) Characteristics of high al content algan grown by pulsed atomic layer epitaxy, APPLIED SURFACE SCIENCE, 2011, 第 3 作者
(88) Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell, Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell, 中国物理快报:英文版, 2011, 第 4 作者
(89) Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate, 3rd international photonics and optoelectronics meetings (poem 2010), 276: art. no. 012094 2011, 2011, 
(90) Computational investigation of inxga1-xn/inn quantum-dot intermediate-band solar cell, CHINESE PHYSICS LETTERS, 2011, 第 4 作者
(91) T-ZnOw高分子复合材料逾渗行为的模拟与研究, Simulation and Research of Percolation Phenomenon in T-ZnOw Polymer Composites, 材料导报:纳米与新材料专辑, 2010, 第 4 作者
(92) Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN, Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN, 中国物理快报:英文版, 2010, 第 3 作者
(93) Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, 半导体学报, 2010, 第 4 作者
(94) Theoretical investigation of efficiency of a p-a-SiC :H/i-a-Si:H/n-μc-Si solar cell, Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell, 半导体学报, 2010, 第 3 作者
(95) T-ZnOw高分子复合材料逾渗行为的模拟与研究, 材料导报, 2010, 第 4 作者
(96) Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, Simulation and research of percolation phenomenon in T-ZnOw resin matrix composite, JOURNAL OF SEMICONDUCTORS, 2010, 第 4 作者
(97) Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 第 5 作者
(98) Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, CHINESE PHYSICS LETTERS, 2009, 第 3 作者
(99) Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure, 中国物理快报:英文版, 2009, 第 3 作者
(100) Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures, Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures, 中国物理快报:英文版, 2008, 第 3 作者
(101) MOCVD生长GaN的数值模拟和喷淋式反应室结构优化, 半导体技术, 2008, 第 5 作者
(102) Growth temperature dependences of inn films grown by mocvd, APPLIED SURFACE SCIENCE, 2008, 第 3 作者
(103) SiC衬底GaN基HEMT结构材料与器件, 半导体技术, 2008, 第 4 作者
(104) Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures, CHINESE PHYSICS LETTERS, 2008, 第 3 作者
(105) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 4 作者
(106) Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, Hydrogen Sensors Based on AlGaN/AlN/GaN Schottky Diodes, 中国物理快报:英文版, 2008, 第 1 作者
(107) AlGaN/GaN背对背肖特基二极管氢气传感器, Hydrogen Sensors Based on AIGaN/GaN Back-to-Back Schottky Diodes, 半导体学报, 2008, 第 5 作者
(108) The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd, SUPERLATTICES AND MICROSTRUCTURES, 2008, 第 4 作者
(109) Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD, MICROELECTRONICS JOURNAL, 2008, 第 3 作者
(110) AlGaN/AlN_a/GaN/AlN_b/GaN HEMT结构材料生长及性能表征, 半导体技术, 2008, 第 1 作者
(111) Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, Effect of CO on Characteristics of AlGaN/GaN Schottky Diode, 中国物理快报:英文版, 2008, 第 4 作者
(112) AlGaN/GaN型气敏传感器对于C0的响应研究, 半导体学报, 2008, 第 4 作者
(113) AlGaN/GaN型气敏传感器对于CO的响应研究, A Carbon Monoxide Gas Sensor Based on an AlGaN/GaN Structure, 半导体学报, 2008, 第 4 作者
(114) Hydrogen sensors based on AlGaN/AIN/GaN Schottky diodes, CHINESE PHYSICS LETTERS, 2008, 第 4 作者
(115) 过渡族和稀土族元素掺杂GaN基稀磁半导体性能比较, 半导体技术, 2008, 第 4 作者
(116) AlGaN/GaN异质结气体传感器对低体积分数CO的响应研究, 半导体技术, 2008, 第 4 作者
(117) Theoretical design and performance of inxga1-xn two-junction solar cells, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 第 3 作者
(118) Photovoltaic effects in ingan structures with p-n junctions, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 第 3 作者
(119) AlGaN/AlN/GaN肖特基二极管的电学性能, Electrical Characteristic of AlGaN/AlN/GaN Schottky Diode, 半导体学报, 2007, 第 3 作者
(120) 蓝宝石衬底上单晶InN薄膜的MOCVD生长, MOCVD Growth of InN Films on Sapphire Substrates, 半导体学报, 2007, 第 1 作者
(121) 高阻GaN薄膜电阻率测量, Resistivity Measurement of High-Resistivity GaN Film, 半导体学报, 2007, 第 3 作者
(122) 生长温度对RF-MBE外延InAlGaN的影响, Effects of Growth Temperature on the InAlGaN Epilayer by RF-MBE, 半导体学报, 2007, 第 6 作者
(123) Al组分阶变势垒层AlGaN/AlN/GaN HEMTs的制备及性能, Preparation and Properties of AlGaN/AlN/GaN HEMTs with Compositionally Step-Graded AlGaN Barrier Layer, 半导体学报, 2007, 第 4 作者
(124) Characteristics of high al content alxga1-xn grown by metalorganic chemical vapor deposition, MICROELECTRONICS JOURNAL, 2007, 第 6 作者
(125) Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD, JOURNAL OF CRYSTAL GROWTH, 2007, 第 6 作者
(126) High responsivity ultraviolet photodetector based on crack-free GaN on Si (111), Physica status solidi c - current topics in solid state physics丛书标题: physica status solidi c-current topics in solid state physics, 2007, 
(127) Effects of growth temperature of algan buffer layer on the properties of a1(0.58)ga(0.42)n epilayer by nh3-mbe, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 第 4 作者
(128) Simulation of in0.65ga0.35n single-junction solar cell, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 第 3 作者
(129) MOCVD方法制备高Al组分AlGaN, Growth of High Al Content AlGaN Epilayer by MOCVD, 半导体学报, 2007, 第 6 作者
(130) The influence of internal electric fields on the transition energy of ingan/gan quantum well, JOURNAL OF CRYSTAL GROWTH, 2007, 第 3 作者
(131) 双能态Cr+注入法制备GaCrN铁磁性薄膜, Ferromagnetic GaCrN Films Fabricated by Dual-Energy Implantation of Cr+, 半导体学报, 2007, 第 4 作者
(132) Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer, Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer, 中国物理快报:英文版, 2007, 第 5 作者
(133) Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer, JOURNAL OF CRYSTAL GROWTH, 2007, 第 3 作者
(134) SiC衬底上高性能AlGaN/GaN HEMT结构材料的研制, High Quality AlGaN/GaN HEMT Materials Grown on SiC Substrates, 半导体学报, 2007, 第 5 作者
(135) Growth and characterization of algan/aln/gan hemt structures with a compositionally step-graded algan barrier layer, CHINESE PHYSICS LETTERS, 2007, 第 5 作者
(136) 蓝宝石衬底上单晶InAlGaN外延膜的RF-MBE生长, RF-MBE Growth of InAlGaN Epilayer on Sapphire Substrate, 半导体学报, 2006, 第 6 作者
(137) MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构, MOCVD-Grown AIGaN/AIN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC, 半导体学报, 2006, 第 4 作者
(138) MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaN/AlN/GaN HEMT结构, MOCVD-Grown AIGaN/AIN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC, 半导体学报, 2006, 第 4 作者
(139) Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices, CHINESE PHYSICS LETTERS, 2006, 第 7 作者
(140) Ⅴ/Ⅲ比和生长温度对RF-MBE InN表面形貌的影响, Effect of Ⅴ/Ⅲ Flux Ratio and Growth Temperature on Indium Droplet Formation During RF-MBE Growth of InN, 半导体学报, 2005, 第 1 作者
(141) 蓝宝石衬底上单晶InN外延膜的RF-MBE生长, 半导体学报, 2005, 第 1 作者
(142) 在复合衬底γ-Al2O3/Si(001)上生长GaN, Growth of GaN on γ-Al2O33/Si(001) Composite Substrates, 半导体学报, 2005, 第 8 作者
(143) InN材料的RF-MBE生长及其禁带宽度研究, 2005, 第 1 作者

科研活动

   
科研项目
( 1 ) 全光谱InGaN太阳能电池, 负责人, 地方任务, 2016-01--2017-12
( 2 ) 高速低损耗GaN基功率开关器件用外延材料, 负责人, 国家任务, 2014-01--2016-12
( 3 ) 3-4英寸GaN基微电子材料专用MOCVD 装备研制, 参与, 中国科学院计划, 2011-01--2013-12
( 4 ) 4英寸AlGaN/GaN****, 参与, 国家任务, 2016-01--2018-12
( 5 ) 高温MOCVD****, 参与, 国家任务, 2014-01--2016-12
( 6 ) 核高基国家科技重大专项(Ku***), 参与, 国家任务, 2009-01--2012-12
( 7 ) 高质量GaN基HEMT材料研究, 负责人, 国家任务, 2016-11--2018-10
( 8 ) GaN基HEMT材料氢效应研究, 负责人, 国家任务, 2019-01--2020-12
( 9 ) GaN同质外延材料生长研究, 参与, 国家任务, 2016-12--2020-12