基本信息
龚谦  男  博导  中国科学院上海微系统与信息技术研究所
电子邮件: qgong@mail.sim.ac.cn
通信地址: 上海市长宁路865号
邮政编码: 200050

招生信息

   
招生专业
080903-微电子学与固体电子学
085400-电子信息
招生方向
半导体材料与器件,可调谐激光器
硅基光电子
外腔可调半导体谐激光器

教育背景

1993-09--1998-12   中国科学院半导体研究所   工学博士
1989-09--1993-06   北京师范大学   物理学学士

工作经历

   
工作简历
2004-07~现在, 中国科学院上海微系统与信息技术研究所, 研究员
2001-02~2004-06,荷兰Eindhoven技术大学, 博士后
1999-01~2001-02,德国Paul-Drude研究所, 博士后
1993-09~1998-12,中国科学院半导体研究所, 工学博士
1989-09~1993-06,北京师范大学, 物理学学士
社会兼职
2017-08-01-2022-07-31,上海科技大学特聘教授, 特聘教授

专利与奖励

   
奖励信息
(1) 山东省科学技术奖, 三等奖, 省级, 2020
(2) 2017年度山东省高等学校科学技术奖, 一等奖, 省级, 2017
专利成果
( 1 ) 一种硅基砷化镓复合衬底的制备方法, 2019, 第 2 作者, 专利号: 201610153371.2

( 2 ) 一种外腔激光器及其调谐方法, 2018, 第 2 作者, 专利号: 201810503699.1

( 3 ) GaAs分子束外延生长过程中As原子最高结合率的测量方法, 2018, 第 1 作者, 专利号: 201610171321.7

( 4 ) 一种制备石墨烯的方法, 2013, 第 2 作者, 专利号: ZL201210120753.7

( 5 ) 束源炉中源材料熔化时对应热偶温度的测量方法, 2008, 第 1 作者, 专利号: ZL 2008 1 0035445.2

( 6 ) 原位测量源炉中源材料质量的方法, 2008, 第 1 作者, 专利号: ZL 2008 1 0035437.3

出版信息

   
发表论文
(1) 采用Ga(In,As)P异变缓冲层的GaP/Si衬底上InAs量子阱, InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers, 红外与毫米波学报, 2022, 第 5 作者
(2) Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources, ACS APPLIED NANO MATERIALS, 2021, 其他(合作组作者)
(3) Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector, JOURNAL OF LIGHTWAVE TECHNOLOGY, 2021, 通讯作者
(4) 基于QD-SOA-XGM的全光逻辑或非门研究, All-Optical Logic NOR Gate based on QD-SOA-XGM, 通信技术, 2020, 第 5 作者
(5) Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy, APPLIED PHYSICS LETTERS, 2020, 第 7 作者
(6) InGaAs/GaAs/InGaP量子阱激光器的温度电压特性, Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser, 发光学报, 2020, 第 7 作者
(7) Mid- and long-infrared emission properties of InxGa1−xAsySb1−y quaternary alloy with Type-II InAs/GaSb superlattice distribution, JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 第 6 作者
(8) 低温下GaSb基量子阱激光器的光电特性研究, Photoelectric Characteristics of GaSb-based Quantum Well Lasers at Low Temperature, 通信技术, 2020, 第 6 作者
(9) 基于QD-SOA交叉相位调制全光逻辑或门啁啾特性的研究, Characteristics of All-Optical Logic OR Gate Chirp based on QD-SOA-XPM, 通信技术, 2020, 第 5 作者
(10) 数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进, Improved performances of 2. 6 μm In0. 83 Ga0. 17 As /InP photodetectors on digitally-graded metamorphic pseudo-substrates, 红外与毫米波学报, 2019, 第 6 作者
(11) Self-sustained pulse oscillations in a quantum dot laser monolithically grown on germanium, 2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019, 第 4 作者
(12) Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
(13) Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2019, 第 6 作者
(14) GaAs-Based InPBi Quantum Dots for High Efficiency Super-Luminescence Diodes, INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES, 2019, 通讯作者
(15) InGaAs/GaAs/InGaP量子阱激光器的激光单模特性研究, Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers, 激光与光电子学进展, 2019, 第 6 作者
(16) Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
(17) 基于QD-SOA级联XGM与XPM全光逻辑或门的研究, QD-SOA Cascaded XGM and XPM All-Optical Logic OR Gate, 通信技术, 2019, 第 4 作者
(18) 数字递变异变赝衬底上2. 6 μm In_(0. 83)Ga_(0. 17) As /InP光电探测器的性能改进, Improved performances of 2. 6 μm In_(0. 83)Ga_(0. 17) As /InP photodetectors on digitally-graded metamorphic pseudo-substrates, Journal of Infrared and Millimeter Waves, 2019, 第 6 作者
(19) High optical feedback tolerance of InAs/GaAs quantum dot lasers on germanium, OPTICS EXPRESS, 2018, 第 4 作者
(20) 2.0μm中红外量子阱激光器研制及其性能测试与分析, Fabrication and performance test of 2.0μm mid-infrared quantum well lasers, 光电子.激光, 2018, 第 7 作者
(21) 全光逻辑与门转换效率的研究, Conversion Efficiency of All-optical Logic AND Gates, 通信技术, 2018, 第 5 作者
(22) InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化, Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, 红外与毫米波学报, 2018, 第 4 作者
(23) 基于QD-SOA的动态啁啾特性研究, Theoretical Study on Dynamic Chirp Characteristics based on QD-SOA, 通信技术, 2018, 第 5 作者
(24) Speed Characterization of InGaAs/GaAsSb Type-II Quantum Wells PIN Photodiodes, 2018 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2018, 第 1 作者
(25) 1.3μm波段InAs/GaAs量子点激光器性能研究, Performance of 1.3μm InAs/GaAs Quantum-Dot Laser, 通信技术, 2018, 第 6 作者
(26) 全光逻辑异或门相位差特性研究, Study on phase difference of all-optical logic XOR gates, 激光技术, 2018, 第 5 作者
(27) 通过晶格失配调节有盖层张应变Ge量子点的光电特性, Tuning the Optoelectronic Properties of Capped Tensile-strained Ge Quantum Dots by Lattice Mismatch, 材料导报, 2018, 第 8 作者
(28) Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes, OPTICS EXPRESS, 2018, 第 6 作者
(29) 基于QD—SOA级联XGM与XPM波长转换Q因子特性, Q Factor Characteristics of Wavelength Conversion based on QD- SOA Cascaded Connection XGM and XPM, 通信技术, 2018, 第 5 作者
(30) InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化, Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, 红外与毫米波学报, 2018, 第 4 作者
(31) External cavity lasers using stripe mirrors with different mirror width, JOURNAL OF MODERN OPTICS, 2017, 通讯作者
(32) Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge, OPTICS EXPRESS, 2017, 通讯作者
(33) 外场对InPBi量子阱中激子结合能的影响, Effect of external field on exciton binding energy in InPBi quantum well, 量子电子学报, 2017, 第 6 作者
(34) Facile synthesis of highly graphitized nitrogen-doped carbon dots and carbon sheets with solid-state white-light emission, MATERIALS LETTERS, 2017, 
(35) Electronic states in low-dimensional nano-structures: Comparison between the variational and plane wave basis method, SUPERLATTICES AND MICROSTRUCTURES, 2017, 第 3 作者
(36) Annealing effect of the InAs dot-in-well structure grown by MBE, JOURNAL OF CRYSTAL GROWTH, 2017, 通讯作者
(37) 量子点半导体光放大器的波长转换效率, Wavelength Conversion Efficiency of Quantum Dot Semiconductor Optical Amplifier, 光学学报, 2017, 第 5 作者
(38) InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant., APPLIED OPTICS, 2017, 
(39) Cd_(1-x)Mn_xTe/CdTe量子阱中电子-LO声子散射率, Electron-LO phonon scattering rate in Cd_(1-x)Mn_xTe/CdTe quantum well, 量子电子学报, 2017, 第 5 作者
(40) Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots., NANOSCALE RESEARCH LETTERS, 2016, 通讯作者
(41) 大范围连续调谐的InAs/InP(100)外腔量子点激光器, 光电子·激光, 2016, 第 6 作者
(42) Influence of doping in inp buffer on photoluminescence behavior of inpbi, JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 通讯作者
(43) 基于单端QD-SOA波长转换增益恢复特性研究, Study on gain recovery time of wavelength conversionbased on single-port-coupled QD-SOA, 激光技术, 2016, 第 5 作者
(44) Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure., NANOSCALE RESEARCH LETTERS, 2016, 通讯作者
(45) GaInAsP/InP阶梯量子阱中电子-电子的散射率, Electron-electron Scattering Rate in Ga InAsP/InP Stepped Quantum Well, 发光学报, 2016, 第 5 作者
(46) Growth and material properties of InPBi thin films using gas source molecular beam epitaxy, JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 第 8 作者
(47) 量子点半导体光放大器波长转换的Q因子特性, Q Factor Characteristics of Wavelength Conversion Based on Quantum Dot Semiconductor Optical Amplifiers, 发光学报, 2016, 第 5 作者
(48) 基于量子点光放大器波长转换的啁啾特性研究, Theoretical study on chirp of wavelength conversion based on QD-SOA, 激光技术, 2016, 第 4 作者
(49) 气源分子束外延生长的InPBi薄膜材料中的深能级中心, Deep Centers in InPBi Thin Film Grown by Gas Source Molecular Beam Epitaxy, 发光学报, 2016, 第 9 作者
(50) The electron-longitudinal optical phonon scattering rate in GaInAsP/InP stepped quantum well, INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2016, 第 5 作者
(51) Heteroepitaxy growth of GaAsBi on Ge(100) substrates by gas source molecular beam epitaxy, Applied Physics Express, 2016, 通讯作者
(52) 基于QD-SOA光判决门的研究, Optical Decision Gate based on QD-SOA, 通信技术, 2016, 第 5 作者
(53) 基于QD-SOA-MZI结构的全光逻辑门的性能优化, Performance Optimization of All Optical Logic Gates based on QD-SOA-MZI Structure, 通信技术, 2016, 第 5 作者
(54) InAs/GaAs量子点激光器的增益和线宽展宽因子, Gain and Linewidth Enhancement Factor of InAs/GaAs Quantum-dot Laser Diodes, 发光学报, 2015, 第 6 作者
(55) Highly luminescent carbon nanoparticles as yellow emission conversion phosphors, MATERIALS LETTERS, 2015, 第 2 作者
(56) A wireless remote high-power laser device for optogenetics experiments, Laser Physics, 2015, 通讯作者
(57) Analysis of mode-hop free tuning of folded cavity grating feedback lasers, APPLIED OPTICS, 2015, 通讯作者
(58) A facile and transfer-free path for template-less synthesis of carbon nanosheets, MATERIALS LETTERS, 2015, 
(59) InAs/InP量子点激光器中欧姆接触合金层特性研究, Characteristic study of ohmic contact alloy layer in InAs/InP quantum dot lasers, 光电子·激光, 2015, 第 2 作者
(60) Wavelength tuning of InAs quantum dot laser by micromirror device, JOURNAL OF CRYSTAL GROWTH, 2015, 
(61) Highly luminescence carbon nanoparticles as yellow emission conversion phosphors, Materials Letters, 2015, 第 1 作者
(62) A Novel Method to Measure the Internal Quantum Efficiency and Optical Loss of Laser Diodes, IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 
(63) Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers, CHINESE PHYSICS LETTERS, 2015, 第 2 作者
(64) Raman spectroscopy of epitaxial topological insulator bi2te3 thin films on gan substrates, MODERN PHYSICS LETTERS B, 2015, 第 3 作者
(65) Cd_(1-x)Mn_xTe/CdTe拋物量子阱内激子结合能研究, Binding energies of excitons in symmetrical Cd_(1-x)Mn_xTe/CdTe parabolic quantum well, 量子电子学报, 2015, 第 3 作者
(66) Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates, APPLIED SURFACE SCIENCE, 2014, 第 2 作者
(67) 采用InGaP和InAlP作为虚衬底的张应变Ge薄膜的材料性质比较, Property Comparison of Tensile-strained Ge Films on Metamorphic InGaP and InAlP Templates, 材料科学与工程学报, 2014, 第 2 作者
(68) 高性能InAs/GaAs量子点外腔激光器, High performance InAs/GaAs quantum dot external cavity lasers, 光电子·激光, 2014, 第 3 作者
(69) A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst., SCIENTIFIC REPORTS, 2014, 
(70) Template-less synthesis of hollow carbon nanospheres for white light-emitting diodes, MATERIALS LETTERS, 2014, 
(71) Chemical vapor deposition of graphene on liquid metal catalysts, CARBON, 2013, 第 4 作者
(72) High Intensity Single-Mode Peak Observed in the Lasing Spectrum of InAs/GaAs Quantum Dot Laser, CHINESE PHYSICS LETTERS, 2013, 第 2 作者
(73) 基于DMD的外腔量子点激光器性能研究, Performance of a quantum-dot external-cavity laser based on digital micro-mirror device, 光电子·激光, 2013, 第 3 作者
(74) High-performance InAs/GaAs quantum dot laser with dot layers grown at 425°C, Chinese Optics Letters, 2013, 第 2 作者
(75) GaInAsP/InP阶梯量子阱中氢施主杂质束缚能, Binding energy of hydrogenic donor impurity in GaInAsP/InP stepped quantum well, 量子电子学报, 2013, 第 3 作者
(76) 外加电场对GaN/Al_xGa_(1-x)N双量子阱中性施主束缚能的影响, Influence of electric field on binding energy of neutral donor in symmetrical GaN/Al_xGa_(1-x)N double quantum wells, 量子电子学报, 2013, 第 3 作者
(77) 外电场对InGaAsP/InP量子阱内激子结合能的影响, 物理学报, 2013, 第 3 作者
(78) 外腔反馈对量子点激光器输出特性的影响, Influence of External Cavity Feedback on The Output Characteristics of Quantum-dot Lasers, 发光学报, 2013, 第 4 作者
(79) Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy, INFRARED PHYSICS & TECHNOLOGY, 2012, 
(80) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot lasers grown by gas source molecular beam epitaxy, Physica E, 2012, 第 1 作者
(81) Low-temperature characteristics of two-color InAs/InP quantum dots laser, CHINESE OPTICS LETTERS, 2012, 第 2 作者
(82) Measurements of I-V characteristic in InAs/InP quantum dot laser diode, Journal of Modern Optics, 2012, 第 1 作者
(83) 基于ZigBee远程控制的激光光源系统, Remote-Control Laser Source System based on ZigBee, 通信技术, 2012, 第 3 作者
(84) InAs/InP量子点激光器制备工艺研究, Fabricating technique of InAs/InP quantum dot lasers, 光电子.激光, 2012, 第 2 作者
(85) Low-temperature characteristics of two-color InAs/InP quantum dots laser, Low-temperature characteristics of two-color InAs/InP quantum dots laser, 中国光学快报(英文版), 2012, 第 2 作者
(86) 1.5mm腔长InAs/InP量子点激光器镜面外腔光谱特性研究, 半导体光电, 2012, 第 2 作者
(87) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 
(88) High performance external cavity InAs/InP quantum dot lasers, APPLIED PHYSICS LETTERS, 2011, 
(89) Fabrication of Hinged Mirrors Using a Strain-Driven Self-Assembly Method on a GaAs Substrate, CHINESE PHYSICS LETTERS, 2011, 第 4 作者
(90) InAs/GaAs qunatum dot lasers grown by gas-source molecular-beam epiatxy, J. Cryst. Growth, 2010, 通讯作者
(91) External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire, PHYSICA B-CONDENSED MATTER, 2010, 第 3 作者
(92) InAs/InP(100) quantum dot laser with high wavelength stability, ELECTRONICS LETTERS, 2010, 
(93) 气源分子束外延生长的InAs/InP(100)量子点激光器, InAs/InP (100) Quantum Dot Laser Grown by Gas Source Molecular Beam Epitaxy, 半导体技术, 2010, 第 6 作者
(94) InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2010, 
(95) Defect and dope selective of transmission properties of 2D photonic crystal, OPTIK, 2010, 第 2 作者
(96) InAs/GaAs量子点激光器结温研究, Junction-temperature Measurement in InAs/GaAs Quantum-dot Lasers, 半导体光电, 2010, 第 7 作者
(97) Electronic States of a Shallow Hydrogenic Donor Impurity in Different Shaped Semiconductor Quantum Wells, COMMUNICATIONS IN THEORETICAL PHYSICS, 2009, 第 4 作者
(98) External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot, JOURNAL OF APPLIED PHYSICS, 2009, 第 4 作者
(99) Two-color quantum dot laser with tunable wavelength gap, APPLIED PHYSICS LETTERS, 2009, 
(100) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2009, 
(101) 亚毫安阈值的1.3μm垂直腔面发射激光器, Submilliampare threshold 1.3μm vertical-cavity surface-emitting lasers, 物理学报, 2009, 第 5 作者
(102) Bulletlike light pulses in photonic crystals, APPLIED PHYSICS LETTERS, 2008, 第 2 作者
(103) External electric field elect on hydrogenic donor impurity in zinc-blende InGaN quantum dot, CHINESE PHYSICS LETTERS, 2008, 第 4 作者
(104) Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy, APPLIED PHYSICS LETTERS, 2008, 
(105) 键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器, Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding, 半导体学报, 2008, 第 7 作者
(106) GSMBE生长的非均匀多纵模量子点激光器, Inhomogeneously Multi-Longitudinal-Mode Lasing Quantum-Dot Lasers Grown by GSMBE, 半导体技术, 2008, 第 2 作者
(107) 太赫兹量子级联激光器电极制备中的几个问题, 第11届全国发光学学术会议论文摘要集, 2007, 第 2 作者
(108) 大功率In(Ga)As/GaAs量子点激光器, 半导体学报, 2000, 第 6 作者
(109) 量子点激光器及其应用研究, 高技术通讯, 2000, 第 8 作者
(110) 红光InAlAs量子点的结构和光学性质, 发光学报, 1999, 第 3 作者
(111) GaAs(311)A衬底上自组装InAs量子点的结构和光学特性, 物理学报, 1999, 第 2 作者
(112) Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution, Red luminesecnce from self-assembled InAlAs/AlGaAs quantum dots with bimodal size distribution, 中国物理快报:英文版, 1999, 第 5 作者
(113) InAs量子点的原子力显微镜测试结果分析, 半导体学报, 1999, 第 3 作者
(114) In(Ga)As量子点材料的分子束外延生长性质及激光器的研究, 1998, 第 1 作者
(115) 808nm GaAs/AlGaAs大功率半导体激光器波长的影响因素及控制, 半导体学报, 1997, 第 4 作者
(116) 高温连续输出AlGaAs大功率单量子阱激光器的工作特性, 半导体学报, 1997, 第 9 作者
(117) MBE自组织生长多层竖直自对准InAs量子点结构的研究, 发光学报, 1997, 第 5 作者

科研活动

   
科研项目
( 1 ) 大规模光子集成芯片, 参与, 中国科学院计划, 2016-07--2021-07
( 2 ) 片上量子点激光器外延技术研究, 负责人, 地方任务, 2017-01--2021-12
( 3 ) 单片集成硅基量子点激光器的研究, 参与, 国家任务, 2017-01--2020-12
( 4 ) 超导计算机互连技术, 参与, 中国科学院计划, 2018-02--2022-12
( 5 ) 2-4μm 室温连续激光器及中远红外探测器研究, 参与, 国家任务, 2017-07--2020-12
( 6 ) 面向规模集成的高效硅基光波导放大器和激光器, 负责人, 国家任务, 2021-12--2024-11