General
XINHUI ZHANG, PROFESSOR
State Key Laboratory of Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences
Email: xinhuiz@semi.ac.cn
Telephone: 010-82304486
FAX: 010-823045056
Address: Tsinghua East Rd. A35, Bld. 2, Rm 216
Postcode: 100083
State Key Laboratory of Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences
Email: xinhuiz@semi.ac.cn
Telephone: 010-82304486
FAX: 010-823045056
Address: Tsinghua East Rd. A35, Bld. 2, Rm 216
Postcode: 100083
Research Areas
Prof. Zhang’s current research focuses on the fundamental physics of semiconductor spintronics.
1) Spin dynamics and coherent control of semiconductor nanostructures;
2) Collective spin excitation and magnetization dynamics in ferromagnetic thin films, ferromagnet/semiconductor heterostructures as well as dilute magnetic semiconductors.
1) Spin dynamics and coherent control of semiconductor nanostructures;
2) Collective spin excitation and magnetization dynamics in ferromagnetic thin films, ferromagnet/semiconductor heterostructures as well as dilute magnetic semiconductors.
Education
1994.9--1997.8
Candidate for Ph.D.
Institute of Physics, Chinese Academy of Sciences, Beijing
Research field: Linear and nonlinear optical study for the interband and intersubband transitions of Silicon-Germanium multiple quantum wells and superlattices
Ph. D. in Science (1997.8)
1991.9--1994.6
Graduate Student for Master Degree.
Department of Physics, Shàanxi Normal University, Xi’an, China
Research field: Surface-Enhanced Raman Scattering
Master Degree in Science (1994.6)
1987.9--1991.7
Undergraduate Student
Department of Physics, Shàanxi Normal University, Xi’an, China
Bachelor Degree in Science (1991.7)
Candidate for Ph.D.
Institute of Physics, Chinese Academy of Sciences, Beijing
Research field: Linear and nonlinear optical study for the interband and intersubband transitions of Silicon-Germanium multiple quantum wells and superlattices
Ph. D. in Science (1997.8)
1991.9--1994.6
Graduate Student for Master Degree.
Department of Physics, Shàanxi Normal University, Xi’an, China
Research field: Surface-Enhanced Raman Scattering
Master Degree in Science (1994.6)
1987.9--1991.7
Undergraduate Student
Department of Physics, Shàanxi Normal University, Xi’an, China
Bachelor Degree in Science (1991.7)
Experience
Work Experience
2007. 12 — present
Professor
State Key Laboratory of Superlattices and Microstructures
Institute of Semiconductors, Chinese Academy of Sciences
2006. 01 — 2007. 11
Associate professor
State Key Laboratory of Superlattices and Microstructures
Institute of Semiconductors, Chinese Academy of Sciences
2004. 10 — 2005. 12
Research Scientist
Department of Physics & Astronomy, University of Moncton, Moncton, N.-B. ,Canada,
2001.9— 2004. 8
Post-doctoral Research Associate
Department of Physics & Astronomy, The University of Oklahoma, Norman, Oklahoma
2000.9— 2001.8
Post-doctoral Researcher
Department of Applied Science, College of William and Mary, Williamsburg, Virginia
1997.8—1999.6
Post-doctoral fellow
Department of Solid State Physics, Lund University, Sweden
Professor
State Key Laboratory of Superlattices and Microstructures
Institute of Semiconductors, Chinese Academy of Sciences
2006. 01 — 2007. 11
Associate professor
State Key Laboratory of Superlattices and Microstructures
Institute of Semiconductors, Chinese Academy of Sciences
2004. 10 — 2005. 12
Research Scientist
Department of Physics & Astronomy, University of Moncton, Moncton, N.-B. ,Canada,
2001.9— 2004. 8
Post-doctoral Research Associate
Department of Physics & Astronomy, The University of Oklahoma, Norman, Oklahoma
2000.9— 2001.8
Post-doctoral Researcher
Department of Applied Science, College of William and Mary, Williamsburg, Virginia
1997.8—1999.6
Post-doctoral fellow
Department of Solid State Physics, Lund University, Sweden
Publications
Selected publications:
[1] Han Yue, Chunbo Zhao, Haixia Gao, Hailong Wang, Xuezhe Yu, Jianhua Zhao, Xinhui Zhang*
“Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal transition”
Applied Physics Letters 102, 102412 (2013)
[2] Chunbo Zhao, Tengfei Yan, Haiqiao Ni, Zhichuan Niu, and X. H. Zhang*,
“Electron spin dynamics study of bulk p-GaAs: The screening effect”
Applied Physics Letters 102, 012406 (2013)
[3] X. G. Wu and X. H. Zhang
“Cyclotron resonance and intersubband transitions in symmetric InSb/AlInSb quantum wells with a perpendicular magnetic field”
Journal of Applied Physics, 111, 023716 (2012)
[4] Y. Gong, A. R Kutayiah, X. H. Zhang, J. H. Zhao, and Y. H. Ren
“Non-thermal excitation and control of magnetization in Fe/GaAs film by ultrafast laser pulses”，Journal of Applied Physics, 111, 07D505(2012)
[5] L. F. Han, Y. G. Zhu, X. H. Zhang*, P. H. Tan, H. Q. Ni and Z. C. Niu
“Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well”
Nanoscale Research Letters 6, 84 (2011)
[6] X. Huang, X.H. Zhang*, Y.G. Zhu, T. Li, L.F. Han, X.J. Shang, H.Q. Ni and Z.C. Niu,“ The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy”
Optics Communications, 283, 1510 (2010).
[7] X. Huang, X.H. Zhang*, Y.G. Zhu, T. Li, L.F. Han, X.J. Shang, H.Q. Ni and Z.C. Niu “The Effect of an Electric Field on the Nonlinear Response of InAs/GaAs Quantum Dots”
Journal of Optics, 12, 055203 (2010)
[8] Y. G. Zhu, L. F. Han, L. Chen, X. H. Zhang* and J. H. Zhao
“Electron Spin Dynamics in Heavily Mn-Doped (Ga,Mn)As”
Applied Physics Letters 97( 26), 262109 (2010)
[9] Yonggang Zhu, Xinhui Zhang*, Tao Li, Lin Chen, Jun Lu and Jianhua Zhao
“ Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation”
Applied Physics Letters 94, 142109 (2009)；(also selected in Virtual Journal of Ultrafast Science, Volume 8, Issue 5, 2009)
[10] Yonggang Zhu, Xinhui Zhang*, Tao Li, Xia Huang, Lifen Han and Jianhua Zhao,
“Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As ”
Applied Physics Letters 95, 052108 (2009)；(also selected in Virtual Journal of Ultrafast Science, Volume 8, Issue 9, 2009)
[11] X.H. Zhang, R.E. Doezema, N. Goel, S.J. Chung, M.B. Santos, N. Dai, F.H. Zhao and Z.S. Shi,
“Photoluminescence Study of InSb/In1-xAlxSb Quantum Wells”
Applied Physics Letters, 89, 021907 (2006)
[12] G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, and L. C. Feldman
“Structure-dependent vibrational lifetimes of hydrogen in silicon”
Physical Review Letter, 88, 135501-135504 (2002)
[13] Y. H. Ren, X. H. Zhang, G. L？pke, M. Schneider, M. Onellion, I. E. Perakis, Y. F. Hu, Q. Li, “Observation of strongly damped GHz phonon-porlariton oscillations in La0.67Ca0.33MnO3”
Physical Review B, 64, 144401 (2001)
[14] Xinhui Zhang, Zhenghao Chen, Linzhen Xuan, Changsi Peng, Shaohua Pan and Guozhen Yang.
“Second-harmonic generation from (Si5Ge5)100 superlattices with an applied external electric field”,
Applied Physics Letters,, 71, 3359(1997)
[15] Xinhui Zhang, Zhenghao Chen, Linzhen Xuan, Shaohua Pan, and Guozhen Yang.
“Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)100 superlattices”
Physical Review B, 56, 15842(1997)
[1] Han Yue, Chunbo Zhao, Haixia Gao, Hailong Wang, Xuezhe Yu, Jianhua Zhao, Xinhui Zhang*
“Electron spin dynamics of ferromagnetic Ga1-xMnxAs across the insulator-to-metal transition”
Applied Physics Letters 102, 102412 (2013)
[2] Chunbo Zhao, Tengfei Yan, Haiqiao Ni, Zhichuan Niu, and X. H. Zhang*,
“Electron spin dynamics study of bulk p-GaAs: The screening effect”
Applied Physics Letters 102, 012406 (2013)
[3] X. G. Wu and X. H. Zhang
“Cyclotron resonance and intersubband transitions in symmetric InSb/AlInSb quantum wells with a perpendicular magnetic field”
Journal of Applied Physics, 111, 023716 (2012)
[4] Y. Gong, A. R Kutayiah, X. H. Zhang, J. H. Zhao, and Y. H. Ren
“Non-thermal excitation and control of magnetization in Fe/GaAs film by ultrafast laser pulses”，Journal of Applied Physics, 111, 07D505(2012)
[5] L. F. Han, Y. G. Zhu, X. H. Zhang*, P. H. Tan, H. Q. Ni and Z. C. Niu
“Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well”
Nanoscale Research Letters 6, 84 (2011)
[6] X. Huang, X.H. Zhang*, Y.G. Zhu, T. Li, L.F. Han, X.J. Shang, H.Q. Ni and Z.C. Niu,“ The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy”
Optics Communications, 283, 1510 (2010).
[7] X. Huang, X.H. Zhang*, Y.G. Zhu, T. Li, L.F. Han, X.J. Shang, H.Q. Ni and Z.C. Niu “The Effect of an Electric Field on the Nonlinear Response of InAs/GaAs Quantum Dots”
Journal of Optics, 12, 055203 (2010)
[8] Y. G. Zhu, L. F. Han, L. Chen, X. H. Zhang* and J. H. Zhao
“Electron Spin Dynamics in Heavily Mn-Doped (Ga,Mn)As”
Applied Physics Letters 97( 26), 262109 (2010)
[9] Yonggang Zhu, Xinhui Zhang*, Tao Li, Lin Chen, Jun Lu and Jianhua Zhao
“ Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation”
Applied Physics Letters 94, 142109 (2009)；(also selected in Virtual Journal of Ultrafast Science, Volume 8, Issue 5, 2009)
[10] Yonggang Zhu, Xinhui Zhang*, Tao Li, Xia Huang, Lifen Han and Jianhua Zhao,
“Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As ”
Applied Physics Letters 95, 052108 (2009)；(also selected in Virtual Journal of Ultrafast Science, Volume 8, Issue 9, 2009)
[11] X.H. Zhang, R.E. Doezema, N. Goel, S.J. Chung, M.B. Santos, N. Dai, F.H. Zhao and Z.S. Shi,
“Photoluminescence Study of InSb/In1-xAlxSb Quantum Wells”
Applied Physics Letters, 89, 021907 (2006)
[12] G. Lüpke, X. Zhang, B. Sun, A. Fraser, N. H. Tolk, and L. C. Feldman
“Structure-dependent vibrational lifetimes of hydrogen in silicon”
Physical Review Letter, 88, 135501-135504 (2002)
[13] Y. H. Ren, X. H. Zhang, G. L？pke, M. Schneider, M. Onellion, I. E. Perakis, Y. F. Hu, Q. Li, “Observation of strongly damped GHz phonon-porlariton oscillations in La0.67Ca0.33MnO3”
Physical Review B, 64, 144401 (2001)
[14] Xinhui Zhang, Zhenghao Chen, Linzhen Xuan, Changsi Peng, Shaohua Pan and Guozhen Yang.
“Second-harmonic generation from (Si5Ge5)100 superlattices with an applied external electric field”,
Applied Physics Letters,, 71, 3359(1997)
[15] Xinhui Zhang, Zhenghao Chen, Linzhen Xuan, Shaohua Pan, and Guozhen Yang.
“Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)100 superlattices”
Physical Review B, 56, 15842(1997)
Research Interests
Dr. Zhang’s research interests focus on the infrared optical spectroscopy studies (e.g. the nonlinear and time resolved ultrafast spectroscopy, Magneto-optical study, so on) for semiconductor nanostructures. Her current research focuses on the fundamental physics of semiconductor spintronics. These include: 1) Spin dynamics and coherent control of semiconductor nanostructures. 2) Collective spin excitation and magnetization dynamics in ferromagnetic thin films, ferromagnet/semiconductor heterostructures as well as dilute magnetic semiconductors.
The On-going projects:
- “The InAs/GaSb type II superlattice towards application of the very long wavelength infrared detectors” (Key Program, NSFC, 2013.01-2018.12).
- “Dynamics study and manipulation of optoelectric coupling and photo-induced collective excitation in semiconductor and semiconductor/metal hybrid micro- and nano-structures”, (Key Technologies R&D Program, MOST, 2011.8-2016.12).
- “Spin relaxation and transport dynamics via manipulation of spin-orbit coupling in III-V group two dimensional electron gas system” (General Program, NSFC, 2013.01-2017.12).
- “Spintronic devices based on ferromagnet/semiconductor heterostructures” (Key Technologies R&D Program, MOST, 2013.01-2018.12).