基本信息
韩勤  男  博导  中国科学院半导体研究所
电子邮件: hanqin@red.semi.ac.cn
通信地址: 北京912信箱
邮政编码: 100083

招生信息

   
招生专业
080903-微电子学与固体电子学
080901-物理电子学
招生方向
半导体光电材料、器件及集成芯片,新型光电探测器
光电集成芯片及光互联
石墨烯光电器件基础研究

教育背景

2003-07--2007-02 中科院半导体所 博士
1988-09--1991-07 中科院半导体所 硕士
1983-09--1988-07 中国科技大学 理学学士
学历
-- 研究生
学位
-- 博士

专利与奖励

   
奖励信息
(1) 新型GaInAs(NSb)低维半导体光电子材料与器件,二等奖,省级,2006
专利成果
[1] 陆子晴, 韩勤, 叶焓, 王帅, 肖峰. 偏振无关的双脊型铟磷基光学混频器及其制备方法. CN: CN110554460B, 2021-02-12.

[2] 陆子晴, 韩勤, 叶焓, 王帅, 肖峰. 一种磷化铟基光学混频器及其制备方法. CN: CN110297289B, 2020-11-03.

[3] 王帅, 韩勤, 叶焓, 耿立妍, 陆子晴, 肖锋, 肖帆. 一种单光子雪崩光电探测器焦平面阵列及制备方法. CN: CN111599888A, 2020-08-28.

[4] 王帅, 韩勤, 叶焓, 陆子晴, 肖锋, 肖帆. 正入射盖革模式雪崩探测器焦平面阵列及其制备方法. CN: CN111477715A, 2020-07-31.

[5] 吕倩倩, 韩勤, 杨晓红, 尹伟红. AWG输出波导与波导探测器的集成器件及其制备方法. 中国: CN105137537B, 2018-03-06.

[6] 尹冬冬, 杨晓红, 韩勤, 何婷婷, 吕倩倩. 一种硅基混合集成雪崩光电探测器. 中国: CN105789366A, 2016-07-20.

[7] 杨晓红, 尹冬冬, 何婷婷, 叶焓, 王帅, 韩勤. 台面型雪崩光电探测器. 中国: CN105405917A, 2016-03-16.

[8] 尹伟红, 王玉冰, 韩勤, 杨晓红. 石墨烯场效应器件的制备方法. 中国: CN104979165A, 2015-10-14.

[9] 吕倩倩, 韩勤, 杨晓红, 尹伟红. AWG输出波导与探测器有缝对接的集成器件及制备方法. 中国: CN104950382A, 2015-09-30.

[10] 王玉冰, 尹伟红, 韩勤, 杨晓红. 集成分布布拉格反射光栅的增强型石墨烯波导探测器. 中国: CN103943715A, 2014-07-23.

[11] 杨晓红, 聂诚磊, 史章淳, 倪海桥, 韩勤. 一种非对称沟道量子点场效应光子探测器. 中国: CN103489937A, 2014-01-01.

[12] 吕倩倩, 韩勤, 崔荣, 李彬, 尹伟红, 杨晓红. InP基的无源线波导的光纤光斑转换耦合器及制备方法. 中国: CN103487883A, 2014-01-01.

[13] 崔荣, 杨晓红, 李彬, 尹伟红, 吕倩倩, 韩勤. 一种双步消逝场耦合的雪崩光电探测器. 中国: CN103489953A, 2014-01-01.

[14] 尹伟红, 韩勤, 杨晓红, 李彬, 崔荣, 吕倩倩. 石墨烯的低折射率差波导调制器及制备方法. 中国: CN103439807A, 2013-12-11.

[15] 李彬, 韩勤, 杨晓红. 一种雪崩光电探测器及其高频特性提高方法. 中国: CN103268898A, 2013-08-28.

[16] 李彬, 韩勤, 杨晓红. 一种平面型雪崩光电探测器. 中国: CN103227231A, 2013-07-31.

[17] 尹伟红, 韩勤, 杨晓红. 一种谐振腔增强型石墨烯电吸收调制器. 中国: CN103091870A, 2013-05-08.

[18] 李彬, 韩勤, 杨晓红. 一种雪崩光电探测器和提高雪崩光电探测器高频特性的方法. 中国: CN103077996A, 2013-05-01.

[19] 聂诚磊, 杨晓红, 王秀平, 王杰, 刘少卿, 李彬, 杨怀伟, 尹伟红, 韩勤. 一种制备量子点场效应晶体管列阵的方法. 中国: CN102738191A, 2012-10-17.

[20] 杨怀伟, 李彬, 韩勤. 可用于单光子探测的平面型雪崩二极管探测器的制作方法. 中国: CN102412343A, 2012-04-11.

[21] 王杰, 韩勤, 杨晓红, 王秀平, 刘少卿. 一种制作可调谐共振腔增强型探测器中间P型电极的方法. 中国: CN101935009A, 2011-01-05.

[22] 王秀平, 杨晓红, 韩勤, 王杰, 刘少卿. 一种提高电子束曝光效率的方法. 中国: CN101872134A, 2010-10-27.

[23] 王秀平, 杨晓红, 韩勤. 在电子束曝光前对涂有光刻胶的晶片进行聚焦调节的方法. 中国: CN101794085A, 2010-08-04.

[24] 王秀平, 杨晓红, 韩勤. 用于电子束光刻胶PMMA的显影液及其配制方法. 中国: CN101776852A, 2010-07-14.

[25] 秦龙, 韩勤, 杨晓红, 朱彬, 鞠研玲, 李文兵. 一种制作基于微光机电系统的波长可调谐滤波器的方法. 中国: CN101738722A, 2010-06-16.

[26] 牛智川, 方志丹, 倪海桥, 韩勤, 龚政, 张石勇, 佟存柱, 彭红玲, 吴东海, 赵欢, 吴荣汉. 1.3微米高密度量子点结构及其制备方法. 中国: CN1786107, 2006-06-14.

[27] 牛智川, 倪海桥, 徐晓华, 徐应强, 张纬, 韩勤, 吴荣汉. 气态束源炉瞬态开关控制真空装置. 中国: CN1255572, 2006-05-10.

[28] 佟存柱, 牛智川, 韩勤, 杜云, 吴荣汉. 可提高砷化铝氧化均匀性的外延片承载装置. 中国: CN2777751, 2006-05-03.

[29] 牛智川, 徐晓华, 倪海桥, 徐应强, 韩勤, 吴荣汉. 高铟组分镓砷/铟镓砷量子阱结构及其制备方法. 中国: CN1624996, 2005-06-08.

出版信息

   
发表论文
[1] You, Jin, Wang, Yue, Han, Qin, An, Junming. Silica-silicon based planar lightwave circuit quantum key distribution decoding chip for multi-protocol. OPTICS AND LASER TECHNOLOGY[J]. 2022, 145: [2] 肖峰, 韩勤. Butt-joint regrowth method by MOCVD for integration of evanescent wave coupled photodetector and multi-quantum well semiconductor optical amplifier. Chin. Phys.B[J]. 2022, 31: 048101-, [3] 肖峰, 韩勤. nP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier. Japanese Journal of Applied Physics[J]. 2022, 61: 012005-, [4] 陆子晴, 韩勤, 叶焓, 王帅, 肖峰, 肖帆. 适用400Gbit/s接收系统的铟磷基低暗电流高带宽倏逝波耦合光电探测器阵列. 物理学报[J]. 2021, 70(20): 377-382, [5] 肖帆, 韩勤. High-performance surface-illuminated pin photodetector array for 200Gbps receiving system. Proc. of SPIE[J]. 2021, [6] 肖峰, 韩勤. Low dark current and high bandwidth waveguide photodetector by selective area growth technique for photonic integration. Proc. of SPIE[J]. 2021, [7] 王帅, 韩勤. 用于1 550 nm光子检测的InGaAs/InP 单光子雪崩二极管的温度相关性. Infrared and Laser Engineering[J]. 2021, [8] Lu, Ziqing, Han, Qin, Ye, Han, Wang, Shuai, Xiao, Feng. Manufacturing Tolerance Analysis of Deep-Ridged 90 degrees Hybrid Based on InP 4 x 4 MMI. PHOTONICS[J]. 2020, 7(2): http://apps.webofknowledge.com/CitedFullRecord.do?product=UA&colName=WOS&SID=5CCFccWmJJRAuMzNPjj&search_mode=CitedFullRecord&isickref=WOS:000551229300008.
[9] Lu, ZiQing, Han, Qin, Ye, Han, Wang, Shuai, Xiao, Feng, Xiao, Fan. High common mode rejection ratio InP 90 degrees optical hybrid in ultra-broadband at 60 nm with deep-rigded waveguide based on x 4 MMI coupler. CHINESE PHYSICS B[J]. 2020, 29(5): https://www.webofscience.com/wos/woscc/full-record/WOS:000539985500001.
[10] Wang Shuai, Han Qin, Hou Lili, Ye Han, Lu Ziqing, Jiang Y, Ma X, Li X, Pu M, Feng X, Kippelen B. 8 x 8 format InGaAs/InP avalanche photodiode plane array for 3D imaging laser radar system. 9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING AND IMAGINGnull. 2019, 10843: [11] Lin, Tianhua, Han, Qin, Chu, Tao. Optical via for silicon photonic 3D-integrations. OPTICS COMMUNICATIONS[J]. 2019, 452: 200-202, http://dx.doi.org/10.1016/j.optcom.2019.07.031.
[12] Lu, ZiQing, HanYe, ShuaiWang, FengXiao, Geng, Liyan, QinHan, Wang, H. Design and Simulation of a Polarization Insensitive Optical 90 degrees Hybrid based on InP Multimode Interference Coupler. ELEVENTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2019)null. 2019, 11209: [13] 侯丽丽, 韩勤, 李彬, 王帅, 叶焓. 用刻蚀坑方法抑制平面型InGaAs/InP盖革模式APD的边缘击穿. 光子学报[J]. 2018, 0523001-1, http://lib.cqvip.com/Qikan/Article/Detail?id=71908866504849564853484951.
[14] 侯丽丽, 韩勤, 王帅, 叶焓. InGaAs/InP盖革模式雪崩光电二极管阵列性能一致性研究. 半导体光电. 2018, 39(3): 326-331, http://lib.cqvip.com/Qikan/Article/Detail?id=675476726.
[15] Yu-Bing Wang, Wei-Hong Yin, Qin Han, Xiao-Hong Yang, Han Ye, Shuai Wang, Qian-Qian Lv, Dong-Dong Yin. The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates. CHIN. PHYS. LETT.[J]. 2017, 34(6): 067201-, http://ir.semi.ac.cn/handle/172111/28734.
[16] Wang, YuBing, Yin, WeiHong, Han, Qin, Yang, XiaoHong, Ye, Han, Wang, Shuai, Lv, QianQian, Yin, DongDong. The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates. CHINESE PHYSICS LETTERS[J]. 2017, 34(6): http://lib.cqvip.com/Qikan/Article/Detail?id=672497617.
[17] Lv Qianqian, Han Qin, Pan Pan, Ye Han, Yin Dongdong, Yang Xiaohong. Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform. Optics & Laser Technology[J]. 2017, 90(2017): 122–127-, http://dx.doi.org/10.1016/j.optlastec.2016.08.012.
[18] Ye Han, Han Qin, Lv Qianqian, Pan Pan, An Junming, Yang Xiaohong, Wang Yubing, Liu Rongrui. 4 × 25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique. CHINESE OPTICS LETTERS[J]. 2017, 15(8): 082301-, http://ir.semi.ac.cn/handle/172111/28762.
[19] Wang Yubing, Yin Weihong, Han Qin, Yang Xiaohong, Ye Han, Lu Qianqian, Yin Dongdong. A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer. JOURNAL OF SEMICONDUCTORS[J]. 2017, 38(4): 046001-1, [20] Ye Han, Han Qin, Lu QianQian, Pan Pan, An JunMing, Wang YuBing, Liu RongRui, Hou LiLi. Butt-joint design in a uni-traveling carrier photodiode array monolithic with an arrayed waveguide grating by the selective area growth technique. ACTA PHYSICA SINICA[J]. 2017, 66(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000410775700033.
[21] Ye, Han, Han, Qin, Lv, Qianqian, Pan, Pan, An, Junming, Yang, Xiaohong. Monolithic integration of an InP-based 4 x 25 GHz photodiode array to an O-band arrayed waveguide grating demultiplexer. OPTICS AND LASER TECHNOLOGY[J]. 2017, 97: 290-296, https://www.webofscience.com/wos/woscc/full-record/WOS:000409284800038.
[22] Yu-Bing Wang, Wei-Hong Yin, Qin Han†, Xiao-Hong Yang, Han Ye, Qian-Qian Lv, Dong-Dong Yin. Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates. Chin. Phys. B[J]. 2017, 26(2): 028101-, http://ir.semi.ac.cn/handle/172111/28732.
[23] Liu, Rongrui, Wang, Yubing, Yin, Dongdong, Ye, Han, Yang, Xiaohong, Han, Qin. A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide. JOURNAL OF SEMICONDUCTORS[J]. 2017, 38(5): [24] Lv, Qianqian, Han, Qin, Pan, Pan, Ye, Han, Yin, Dongdong, Yang, Xiaohong. Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform. OPTICS AND LASER TECHNOLOGY[J]. 2017, 90: 122-127, http://dx.doi.org/10.1016/j.optlastec.2016.08.012.
[25] Wang, YuBing, Yin, WeiHong, Han, Qin, Yang, XiaoHong, Ye, Han, Lv, QianQian, Yin, DongDong. Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates. CHINESE PHYSICS B[J]. 2017, 26(2): https://www.webofscience.com/wos/woscc/full-record/WOS:000402250600001.
[26] 王玉冰, 尹伟红, 韩勤, 杨晓红, 叶焓, 王帅, 吕倩倩, 尹冬冬. The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates. 中国物理快报:英文版. 2017, 34(6): 84-86, http://lib.cqvip.com/Qikan/Article/Detail?id=672497617.
[27] Ye Han, Han Qin, Lu QianQian, Pan Pan, An JunMing, Wang YuBing, Liu RongRui, Hou LiLi. Butt-joint design in a uni-traveling carrier photodiode array monolithic with an arrayed waveguide grating by the selective area growth technique. ACTA PHYSICA SINICA[J]. 2017, 66(15): https://www.webofscience.com/wos/woscc/full-record/WOS:000410775700033.
[28] Yin, Dongdong, Yang, Xiaohong, He, Tingting, Lv, Qianqian, Ye, Han, Han, Qin. InGaAs/InAlAs avalanche photodetectors integrated on silicon-on-insulator waveguide circuits. JOURNAL OF OPTICAL TECHNOLOGY[J]. 2017, 84(5): 350-354, https://www.webofscience.com/wos/woscc/full-record/WOS:000408267400011.
[29] Ye, Han, Han, Qin, Lv, Qianqian, Pan, Pan, An, Junming, Yang, Xiaohong, Wang, Yubing, Liu, Rongrui. 4 x 25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique. CHINESE OPTICS LETTERS[J]. 2017, 15(8): https://www.webofscience.com/wos/woscc/full-record/WOS:000407438600020.
[30] 叶焓, 韩勤, 吕倩倩, 潘盼, 安俊明, 王玉冰, 刘荣瑞, 侯丽丽. 基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计. Acta Physica Sinica[J]. 2017, 66: 158502-, http://ir.semi.ac.cn/handle/172111/28763.
[31] Yin Dongdong, He Tingting, Han Qin, Lu Qianqian, Zhang Yejin, Yang Xiaohong. High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits. JOURNAL OF SEMICONDUCTORS[J]. 2016, 37(11): [32] 王文娟, 李雪, 陆卫, 龚海梅, 朱海军, 丁瑞军, 韩勤, 王涛. 低维半导体异质结构光电探测材料及器件验证. 红外与毫米波学报[J]. 2016, 35(6): 766-768, http://lib.cqvip.com/Qikan/Article/Detail?id=670914826.
[33] Wang, Yubing, Yin, Weihong, Han, Qin, Yang, Xiaohong, Ye, Han, Lv, Qianqian, Yin, Dongdong. Bolometric effect in a waveguide-integrated graphene photodetector. CHINESE PHYSICS B[J]. 2016, 25(11): http://ir.semi.ac.cn/handle/172111/27820.
[34] 王启明, 赵玲娟, 朱洪亮, 韩勤, 成步文. 光纤通信有源器件的发展现状. 电信科学. 2016, 32(5): 10-23, http://lib.cqvip.com/Qikan/Article/Detail?id=668935749.
[35] Lv, QianQian, Pan, Pan, Ye, Han, Yin, DongDong, Wang, YuBing, Yang, XiaoHong, Han, Qin. Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating. CHINESE PHYSICS B[J]. 2016, 25(3): http://ir.semi.ac.cn/handle/172111/27834.
[36] Wang WenJuan, Li Xue, Lu Wei, Gong HaiMei, Zhu HaiJun, Ding RuiJun, Han Qin, Wang Tao. Low dimensional semiconductor hetero-structure photoelectric detecting materials and devices. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2016, 35(6): 766-768, https://www.webofscience.com/wos/woscc/full-record/WOS:000392261700020.
[37] 史章淳, 杨晓红, 韩勤. 纳米级自开关二极管的电学特性研究. 半导体光电[J]. 2015, 36(4): 533-537,550, [38] Lv QianQian, Ye Han, Yin DongDong, Yang XiaoHong, Han Qin. An Array Consisting of 10 High-Speed Side-Illuminated Evanescently Coupled Waveguide Photodetectors Each with a Bandwidth of 20GHz. CHINESE PHYSICS LETTERS[J]. 2015, 32(12): http://lib.cqvip.com/Qikan/Article/Detail?id=667858588.
[39] Qin han. Gate dependent photoresponse in graphene p-n junction and FET devices. Chinese Physics B. 2015, [40] 吕倩倩, 叶焓, 尹冬冬, 杨晓红, 韩勤. An Array Consisting of 10 High-Speed Side-Illuminated Evanescently Coupled Waveguide Photodetectors Each with a Bandwidth of 20 GHz. 中国物理快报:英文版. 2015, 171-173, http://lib.cqvip.com/Qikan/Article/Detail?id=667858588.
[41] Li, Bin, Lv, QianQian, Cui, Rong, Yin, WeiHong, Yang, XiaoHong, Han, Qin. A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode. IEEE PHOTONICS TECHNOLOGY LETTERS[J]. 2015, 27(1): 34-37, https://www.webofscience.com/wos/woscc/full-record/WOS:000349185600009.
[42] Bin Li, Qian-Qian Lv, Rong Cui, Wei-Hong Yin, Xiao-Hong Yang, Qin Han. A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode. Ieee photonic technology letter[J]. 2015, 27(1): 34-37, http://ir.semi.ac.cn/handle/172111/26683.
[43] Pan Pan, Junming An, Hongjie Wang, Yue Wang, Jiashun Zhang, Liangliang Wang, Qin Han, Xiongwei Hu. The design and error analysis of 90° hybrid based on InP 4×4 MMI. Optics Communications. 2015, 351: 63-69, http://dx.doi.org/10.1016/j.optcom.2015.04.047.
[44] Yin WeiHong, Wang YuBing, Han Qin, Yang XiaoHong. Gate dependent photoresponse in self-assembled graphene p-n junctions. CHINESE PHYSICS B[J]. 2015, 24(6): http://ir.semi.ac.cn/handle/172111/26678.
[45] Pan, Pan, An, Junming, Wang, Hongjie, Wang, Yue, Zhang, Jiashun, Wang, Liangliang, Han, Qin, Hu, Xiongwei. The design and error analysis of 90 degrees hybrid based on InP 4 x 4 MMI. OPTICS COMMUNICATIONS[J]. 2015, 351: 63-69, http://ir.semi.ac.cn/handle/172111/26649.
[46] Shi, Zhangchun, Yang, Xiaohong, Nie, Chenglei, Yin, Weihong, Han, Qin, Ni, Haiqiao, Niu, Zhichuan. A quantum dot asymmetric self-gated nanowire FET for high sensitive detection. AIP ADVANCES[J]. 2015, 5(1): http://ir.semi.ac.cn/handle/172111/26687.
[47] Pan, Pan, An, Junming, Zhang, Jiashun, Wang, Yue, Wang, Hongjie, Wang, Liangliang, Yin, Xiaojie, Wu, Yuanda, Li, Jianguang, Han, Qin, Hu, Xiongwei. Flat-top AWG based on InP deep ridge waveguide. OPTICS COMMUNICATIONS[J]. 2015, 355: 376-381, http://dx.doi.org/10.1016/j.optcom.2015.06.062.
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指导学生

已指导学生

李文兵  硕士研究生  080901-物理电子学  

鞠研玲  硕士研究生  080901-物理电子学  

秦龙  硕士研究生  080901-物理电子学  

朱彬  博士研究生  080903-微电子学与固体电子学  

杨怀伟  硕士研究生  080903-微电子学与固体电子学  

王秀平  博士研究生  080903-微电子学与固体电子学  

王杰  博士研究生  080903-微电子学与固体电子学  

刘少卿  博士研究生  080903-微电子学与固体电子学  

现指导学生

李彬  博士研究生  080903-微电子学与固体电子学  

王玉冰  硕士研究生  080903-微电子学与固体电子学  

叶焓  硕士研究生  080903-微电子学与固体电子学  

尹伟红  博士研究生  080903-微电子学与固体电子学  

潘盼  博士研究生  080901-物理电子学  

吕倩倩  博士研究生  080901-物理电子学