070205-凝聚态物理
080903-微电子学与固体电子学

半导体材料和物理
低维半导体材料

1995-09--1999-03   南京大学   博士
1991-09--1994-08   中科院上海技术物理研究所   硕士
1987-09--1991-06   杭州大学   学士

   

2004-01~现在, 中科院上海技术物理研究所, 副研究员，研究员
2001-06~2003-12,日本 东北大学, 博士后（COE研究员）
1999-03~2001-05,中科院上海技术物理研究所, 博士后

   

（ 1 ）  Bi元素调控GaAs基纳米线晶体结构的分子束外延生长方法, 发明, 2013, 第 1 作者, 专利号: 201310251573.7
（ 2 ） 一种可用作光学微腔的GaSb纳米盘的分子束外延生长方法, 发明, 2015, 第 1 作者, 专利号: 201510106443.3
（ 3 ） 一种基于共振遂穿效应的GaAs基双色量子阱红外探测器:, 发明, 2018, 第 3 作者, 专利号: 201810598277.7

   

（1） Enhanced terahertz absorption of quantum wells sandwiched between heavily doped contacts based on micro-cavity resonance, JOURNAL OF APPLIED PHYSICS, 2020, 通讯作者
（2） MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 通讯作者
（3） The temperature dependence of anomalous magnetoresistance and weak antilocalization in HgTe/CdTe (111) quantum wells, JOURNAL OF APPLIED PHYSICS, 2020, 通讯作者
（4） MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs, CHINESE PHYSICS LETTERS, 2020, 通讯作者
（5） High-quality epitaxial wurtzite structured InAs nanosheets grown in MBE, NANOSCALE, 2020, 第 7 作者
（6） Strongly polarized quantum well infrared photodetector with metallic cavity for narrowband wavelength selective detection, APPLIED PHYSICS LETTERS, 2020, 第 6 作者
（7） Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires, NANOTECHNOLOGY, 2020, 第 3 作者
（8） High electron mobility InP grown by solid source molecular beam epitaxy, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 第 4 作者
（9） Characterization of the microstructures and optical properties of CdTe(001) and (111) thin films grown on GaAs(001) substrates by molecular beam epitaxy, Journal of Crystal Growth, 2020, 通讯作者
（10） Band Structure of Wurtzite GaBiAs Nanowires, Nano Letter, 2019, 第 4 作者
（11） Effects of InGaAs/InP interface control on the electrical and optical properties of InGaAs films, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 通讯作者
（12） Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire, ACS nano, 2019, 通讯作者
（13） High-responsivity and polarization-discriminating terahertz photodetector based on plasmonic resonance, APPLIED PHYSICS LETTERS, 2019, 通讯作者
（14） Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime, Nanoscale, 2019, 通讯作者
（15） Cut-off wavelength manipulation of pixel-level plasmonic microcavity for long wavelength infrared detection, APPLIED PHYSICS LETTERS, 2019, 第 8 作者
（16） Raman spectroscopic determination of hole concentration in undoped GaAsBi, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 第 5 作者
（17） Anomalous arsenic diffusion at InGaAs/InP interface, MATERIALS RESEARCH EXPRESS, 2019, 第 4 作者
（18） Imaging of nonlocal hot-electron energy dissipation via shot noise, Science, 2018, 第 5 作者
（19） Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi /GaAs heterostructure, J.Appl.Phys., 2018, 第 3 作者
（20） High intersubband absorption in long-wave quantum well infrared photodetector based on waveguide resonance, J.Phys.D, 2018, 通讯作者
（21） In Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires on Atomic Scale, Nano Letters, 2018, 第 5 作者
（22） Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy, CRYSTALS, 2017, 通讯作者
（23） Self-Assembly Growth of In-Rich InGaAs Core−Shell Structured Nanowires with Remarkable Near-Infrared Photoresponsivity, Nano letter, 2017, 第 4 作者
（24） Low temperature photo-induced carrier dynamics in the GaAs0.985N0.015 alloy, JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 第 4 作者
（25） High efficiency optical coupling in long wavelength quantum cascade infrared detector via quasi-one-dimensional grating plasmonic micro-cavity, JOURNAL OF APPLIED PHYSICS, 2017, 第 6 作者
（26） Photoconductivity of InN grown by MOVPE: Low temperature and weak light illumination, APPLIED PHYSICS LETTERS, 2017, 第 3 作者
（27） Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via “one-pot” growth, Nanoscale, 2017, 第 3 作者
（28） Phase purification of GaAs nanowires by prolonging the growth duration in MBE, Journal of Materials Chemistry C, 2017, 第 4 作者
（29） Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire, NANO LETTERS, 2016, 第 10 作者
（30） Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate, APPLIED PHYSICS LETTERS, 2016, 第 5 作者
（31） Pixel-level plasmonic microcavity infrared photodetector, SCIENTIFIC REPORTS, 2016, 第 5 作者
（32） Angular dependence of optical modes in metal-insulator-metal coupled quantum well infrared photodetector, AIP ADVANCES, 2016, 第 5 作者
（33） Fabrication of individual carbon nanotubes and their arrays in a transmission electron microscope, CARBON, 2016, 第 6 作者
（34） Orientation Dependence of Electromechanical Characteristics of Defect-free InAs Nanowires, NANO LETTERS, 2016, 第 4 作者
（35） Quality Control of GaAs Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy, JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 第 6 作者
（36） Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy, Acta Materialia, 2015, 第 3 作者
（37） Catalyst Orientation-Induced Growth of Defect-Free Zinc-BlendeStructured (001) InAs Nanowires , Nano Letters, 2015, 第 4 作者
（38） Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures, Nanoscale Research Letters, 2015, 通讯作者
（39） Quantum dot single-photon switches of resonant tunneling current fordiscriminating-photon-number detection , SCIENTIFIC REPORTS, 2015, 第 4 作者
（40） Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy, CHINESE PHYSICS LETTERS, 2014, 通讯作者
（41） Photocurrent spectrum study of a quantum dot single-photon detectorbased on resonant tunneling effect with near-infrared response, APPLIED PHYSICS LETTERS, 2014, 第 5 作者
（42） Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence , APPLIED PHYSICS LETTERS, 2014, 第 3 作者
（43） Photoluminescence of the single wurtzite GaAs nanowire with different powers and temperatures,  Journal Of Luminescence, 2014, 通讯作者
（44） Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors, Acs Nano, 2014, 第 10 作者
（45） Raman mapping of laser-induced changes and ablation of InAs nanowires, Applied Physics A, 2014, 第 2 作者
（46） Structure and Quality controlled growth of inAs Nanowires through Catalyst engineering , Nano Research, 2014, 第 4 作者
（47） Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy, Applied Physics Letters, 2014, 通讯作者
（48） High-Polarization-Discriminating Infrared Detection Using a Single Quantum Well Sandwiched in Plasmonic Micro-Cavity, SCIENTIFIC REPORTS, 2014, 第 5 作者
（49） Far infrared reflection spectra of InAsxSb1？x (x=0-0.4) thin films, J. Appl. Phys, 2013, 第 3 作者
（50） Impact of growth parameters on the morphology and microstructureof epitaxial of GaAs nanowires grown by molecular beam epitaxy , Journal of Alloys and Compounds, 2013, 通讯作者
（51） Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy, Appl. Phys. Lett., 2013, 第 5 作者
（52） Distinct photocurrent response of individual GaAs nanowires induced by n-type doping., ACS Nano, 2012, 第 10 作者
（53） Laser induced modification and ablation of InAs nanowires , JOURNAL OF APPLIED PHYSICS , 2012, 第 2 作者
（54） Weak field magnetoresistance of narrow-gap semiconductor InSb, JOURNAL OF APPLIED PHYSICS, 2011, 通讯作者
（55） Temperature-Dependent Optical Properties of InAs/GaAs Self-Assembled Quantum Dots: Spectroscopic Measurements and an Eight-Band Study , CHINESE PHYSICS LETTERS , 2011, 第 2 作者
（56） The effects of growth parameters on the RF-MBE growth of dilute InNSb films, JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2010, 通讯作者
（57） Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy, Acta Materialia, 2007, 第 3 作者
（58） Effects of rapid thermal annealing on the properties of GaNxAs1x, JOURNAL OF APPLIED PHYSICS, 2007, 通讯作者
（59） Optical properties of InN films grown by molecular beam epitaxy at different conditions, Thin Solid Films, 2006, 第 1 作者
（60） Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well, Journal of Crystal Growth, 2006, 第 2 作者
（61） MBE growth and properties of InN-based dilute magnetic semiconductors, Journal of Crystal Growth, 2004, 第 1 作者
（62） InMnN: a nitride-based diluted magnetic semiconductor, Solid State Communications, 2004, 第 1 作者
（63） MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties, Journal of Crystal Growth, 2003, 第 1 作者

   

（ 1 ） 小量子体系光-电量子态互作用及其调控, 参与, 国家级, 2011-01--2015-12
（ 2 ） 高质量InSb纳米线的分子束外延生长，微结构及输运特性研究, 主持, 国家级, 2014-01--2017-12
（ 3 ） 量子点操控的单光子探测和圆偏振单光子发射, 参与, 国家级, 2014-01--2017-12
（ 4 ） 人造拓扑超导体与Majorana费米子的研究, 参与, 国家级, 2017-01--2020-12
（ 5 ） 低维半导体异质结构光电探测材料及器件验证研究, 参与, 国家级, 2016-10--2020-12
（ 6 ） 微纳器件中非平衡物理过程研究, 参与, 国家级, 2020-01--2024-12

已指导学生

刘昭麟  博士研究生  080903-微电子学与固体电子学  

张燕辉  博士研究生  080903-微电子学与固体电子学  

卢振宇  博士研究生  080903-微电子学与固体电子学  

石遂兴  博士研究生  080903-微电子学与固体电子学  

张旭涛  博士研究生  080903-微电子学与固体电子学  

郑元辽  博士研究生  080903-微电子学与固体电子学  

现指导学生

张圣熙  博士研究生  080903-微电子学与固体电子学  

张健  博士研究生  070205-凝聚态物理  

姚晓梅  博士研究生  070205-凝聚态物理  

诸毅诚  博士研究生  070205-凝聚态物理