080903-微电子学与固体电子学
085208-电子与通信工程

射频、微波器件与电路集成技术

1998-03--2001-03   中国科学院微电子研究所   博士

   

2001-03~现在, 中国科学院微电子研究所, 研究员

   

[1] 黄森, 冯超, 栾田田, 蒋其梦, 魏珂, 王鑫华, 刘新宇. MIS晶体管. CN202311358353.4, 2023-10-19.
[2] 张寒, 黄森, 蒋其梦, 王鑫华, 魏珂, 刘新宇. 低栅漏电的增强型GaN HEMT 及其制备方法. CN202311337414.9, 2023-10-16.
[3] 王鑫华, 刘新宇, 高润华, 邢湘杰, 黄森, 魏珂. 一种薄膜半导体与金刚石复合衬底及其制造方法. CN: CN116705594A, 2023-09-05.
[4] 王鑫华, 邢湘杰, 高润华, 刘新宇, 黄森, 魏珂. 一种基于临时载体的SiC/金刚石复合衬底制造方法. CN: CN116666199A, 2023-08-29.
[5] 邱乐山, 白云, 刘新宇, 汤益丹, 郝继龙, 杨成樾, 田晓丽. 一种抗单粒子辐照效应的MOSFET器件及其制作方法. CN: CN116705858A, 2023-09-05.
[6] 黄森, 蒋其梦, 戴心玥, 王鑫华, 刘新宇. 折叠沟道氮化镓基场效应晶体管及其制备方法. CN202310431333.9, 2023-04-21.
[7] 赵伟栋, 贾涵博, 吴旦昱, 王丹丹, 刘新宇. 插值滤波器电路、插值滤波器控制电路、方法及变频器. CN: CN116470883A, 2023-07-21.
[8] 张亚融, 贾涵博, 吴旦昱, 王丹丹, 刘新宇. 一种数模转换器的温度计译码电路和数模转换器. CN: CN116436460A, 2023-07-14.
[9] 廖锦鑫, 贾涵博, 吴旦昱, 王丹丹, 刘新宇. 一种负电容均衡器. CN: CN116488971A, 2023-07-25.
[10] 张盼盼, 孙锴, 付洁, 吴旦昱, 贾涵博, 刘新宇. 一种芯片测试数据分析方法及装置. 2023100685898, 2023-02-06.
[11] 孙锴, 梁超越, 吴旦昱, 贾涵博, 刘新宇. 一种集成电路电磁热耦合仿真方法及装置. CN115796087A, 2023-03-14.
[12] 孙锴, 吴旦昱, 梁超越, 贾涵博, 张盼盼, 刘新宇. 一种微区域温度测量方法和系统. CN202211422240.1, 2022-11-14.
[13] 许方园, 郭轩, 李泽宇, 贾涵博, 吴旦昱, 刘新宇. 流水线型模数转换器及其时序控制方法和时序产生电路. CN: CN115580305A, 2023-01-06.
[14] 李大维, 郭轩, 贾涵博, 吴旦昱, 武锦, 刘新宇. 一种调制器电路的实现方法、调制器电路及模数转换器. CN: CN115580306A, 2023-01-06.
[15] 张盼盼, 孙锴, 付洁, 梁超越, 吴旦昱, 刘新宇. 一种评估芯片质量分析模型准确率的方法和系统. CN: CN115600115A, 2023-01-13.
[16] 张盼盼, 孙锴, 付洁, 梁超越, 吴旦昱, 刘新宇. 一种评估芯片质量模型准确率的定量计算方法. CN202211222807.0, 2022-10-08.
[17] 刘新宇, 尤楠楠, 王盛凯. 半导体栅结构的微波等离子体后处理方法. CN: CN115376903A, 2022-11-22.
[18] 王二俊, 田晓丽, 刘新宇, 白云, 杨成樾, 汤益丹, 陈宏. 一种平面栅IGBT器件及其制备方法. CN: CN115425075A, 2022-12-02.
[19] 王鑫华, 刘新宇, 黄森, 魏珂. 一种复合衬底及其制备方法和氮化镓器件. CN202210994473.2, 2022-08-18.
[20] 栾田田, 黄森, 刘新宇, 蒋其梦, 王鑫华, 魏珂. 氮化镓基增强型射频器件及其制备方法. CN202210915204.2, 2022-08-02.
[21] 张昇, 魏珂, 刘新宇. 晶体管器件及其制备方法. CN: CN115346930A, 2022-11-15.
[22] 刘新宇, 黄森, 黄健, 王鑫华, 颜呈祥. GaN基欧姆接触结构及其制备方法、HEMT器件和电子设备. CN: CN115295622A, 2022-11-04.
[23] 蒋其梦, 姬源, 黄森, 王鑫华, 刘新宇. 横向氮化镓基功率器件及其制备方法. CN2022106284834, 2022-06-06.
[24] 杨雨, 田晓丽, 刘新宇, 白云, 杨成樾, 王二俊, 汤益丹, 陈宏. 一种非对称沟槽栅SiC IGBT器件及其制备方法. CN: CN115148800A, 2022-10-04.
[25] 杨雨, 田晓丽, 刘新宇, 白云, 杨成樾, 王二俊, 汤益丹, 陈宏. 一种非对称沟槽栅IGBT器件及其制备方法. CN: CN114843339A, 2022-08-02.
[26] 贾涵博, 余江锋, 郭轩, 吴旦昱, 武锦, 刘新宇. 一种级间增益误差校准方法、装置、设备及介质. CN: CN114584140A, 2022-06-03.
[27] 吴旦昱, 贾涵博, 郭轩, 周磊, 武锦, 刘新宇. 一种流水线模数转换器误差提取方法、装置、设备及介质. CN: CN114465622A, 2022-05-10.
[28] 吴旦昱, 贾涵博, 郭轩, 周磊, 武锦, 刘新宇. 一种流水线模数转换器误差提取方法、装置、设备及介质. CN: CN114465622A, 2022-05-10.
[29] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 一种比较器阈值误差校准方法、装置、设备及介质. CN: CN114448435B, 2023-01-31.
[30] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 一种比较器阈值误差校准方法、装置、设备及介质. CN: CN114448435A, 2022-05-06.
[31] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 一种比较器阈值误差校准方法、装置、设备及介质. CN: CN114448435A, 2022-05-06.
[32] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 流水线ADC的级间增益误差校准方法及其电路、流水线ADC. CN: CN114448434A, 2022-05-06.
[33] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 流水线ADC的级间增益误差校准方法及其电路、流水线ADC. CN: CN114448434A, 2022-05-06.
[34] 蒋其梦, 王宇豪, 黄森, 王鑫华, 刘新宇. 晶体管制备方法及晶体管. CN: CN116544112A, 2023-08-04.
[35] 黄森, 金昊, 蒋其梦, 王鑫华, 刘新宇. 氮化镓基CMOS制备方法及氮化镓基CMOS结构. CN: CN116544189A, 2023-08-04.
[36] 余江锋, 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 一种伪随机多电平生成电路. CN: CN116527022A, 2023-08-01.
[37] 汤益丹, 刘新宇, 白云, 田晓丽, 杨成樾, 陈宏, 郝继龙. 热电联合仿真方法及装置. CN: CN116432368A, 2023-07-14.
[38] 贾涵博, 郭轩, 吴旦昱, 周磊, 武锦, 刘新宇. 一种补偿电路及补偿方法. CN: CN114389609A, 2022-04-22.
[39] 王鑫华, 刘新宇, 黄森, 魏珂, 蒋其梦, 殷海波, 樊捷, 邓可心, 景冠军. 一种基于介质图形化技术的氮化镓器件及其制备方法. CN: CN114628513A, 2022-06-14.
[40] 黄森, 王鑫华, 刘新宇, 王元琨, 魏珂. GaN-BASED SUPERJUNCTION VERTICAL POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF. US16/635,323, 2021-09-14.
[41] 张昇, 魏珂, 王鑫华, 刘新宇, 王万礼, 张新玲, 张俊芳. 一种高电子迁移率晶体管的栅结构及其制备方法. CN: CN113725288A, 2021-11-30.
[42] 罗卫军, 闫伟, 夏志颖, 刘果果, 袁婷婷, 金智, 刘新宇. 一种宽带功分器和宽带功率放大器. CN: CN113437942A, 2021-09-24.
[43] 郑旭强, 刘敏, 吴旦昱, 周磊, 武锦, 刘新宇. 一种判决反馈均衡器. CN: CN115695108A, 2023-02-03.
[44] 李兴, 吴南巡, 刘新宇, 周磊, 吴旦昱, 武锦. 一种应用于数模转换器的非线性校准方法及装置. CN: CN113595552A, 2021-11-02.
[45] 杨成樾, 刘新宇, 白云, 王臻星, 韩忠霖, 汤益丹, 陈宏, 田晓丽, 陆江, 郝继龙. 一种SiC沟槽的刻蚀方法. CN: CN115527848A, 2022-12-27.
[46] 罗卫军, 夏志颖, 闫伟, 刘果果, 袁婷婷, 魏珂, 金智, 刘新宇. 基于去匹配结构的Doherty功率放大器及电子设备. CN: CN113271067A, 2021-08-17.
[47] 罗卫军, 来龙坤, 蒋鑫, 李晨浩, 梁家豪, 刘新宇. 一种电压转换器、方法及电子设备. CN: CN115225045A, 2022-10-21.
[48] 彭庆尧, 吴旦昱, 刘新宇, 周磊, 武锦, 吴南巡, 陈腾. 一种滤波装置、信号处理方法及电子设备. CN: CN114389579A, 2022-04-22.
[49] 刘朝阳, 郑旭强, 刘果果, 刘新宇, 陈江. 一种双二进制四级脉冲幅度调制信号处理方法及系统. CN: CN115208366A, 2022-10-18.
[50] 蔡晨, 刘新宇, 郑旭强, 丁浩, 吴旦昱, 栾舰, 周磊, 武锦. 一种判决反馈均衡器及PAM-4接收机. CN: CN114374375A, 2022-04-19.
[51] 刘新宇, 李兴, 周磊, 吴旦昱, 武锦. 一种单端至差分转换电路、控制方法及数模转换器. CN: CN114301443A, 2022-04-08.
[52] 郑旭强, 丁浩, 蔡晨, 吴旦昱, 栾舰, 周磊, 武锦, 刘新宇. 一种PAM-4信号电平判决阈值的移位装置及电子设备. CN: CN115133922A, 2022-09-30.
[53] 张尚伟, 魏珂, 张昇, 陈晓娟, 张一川, 郑英奎, 黄森, 王鑫华, 刘新宇. 一种半导体器件及其制造方法. CN: CN115132837A, 2022-09-30.
[54] 刘芷诫, 郑英奎, 康玄武, 陈晓娟, 魏珂, 刘新宇. 薄势垒层的场板型肖特基二极管器件模型及参数提取方法. CN: CN112883676A, 2021-06-01.
[55] 狄皓月, 刘果果, 元赛飞, 袁婷婷, 陈晓娟, 魏珂, 刘新宇. 一种低噪声放大器和射频前端电路. CN: CN113067552A, 2021-07-02.
[56] 杨成樾, 刘新宇, 白云, 王臻星, 韩忠霖, 汤益丹, 陈宏, 田晓丽, 陆江, 郝继龙. 一种碳化硅沟槽侧壁粗糙度的测量方法. CN: CN115083935A, 2022-09-20.
[57] 徐潇迪, 武锦, 郭轩, 周磊, 吴旦昱, 刘新宇. 输入前端匹配电路及输入前端匹配电路信号链结构. CN: CN114499458A, 2022-05-13.
[58] 徐潇迪, 武锦, 郭轩, 周磊, 吴旦昱, 刘新宇. 输入前端匹配电路及输入前端匹配电路信号链结构. CN: CN114499458A, 2022-05-13.
[59] 徐潇迪, 武锦, 郭轩, 周磊, 吴旦昱, 刘新宇. 输入前端匹配电路及输入前端匹配电路信号链结构. CN: CN114499458A, 2022-05-13.
[60] 陈江, 郑旭强, 刘果果, 刘新宇. 一种驱动EML型激光器的输出级电路. CN: CN114914785A, 2022-08-16.
[61] 赵浩男, 武锦, 贾涵博, 郭轩, 吴旦昱, 周磊, 刘新宇. 无采保流水线模数转换器的校准方法和装置. CN: CN114268318A, 2022-04-01.
[62] 白云, 刘新宇, 郝继龙, 汤益丹, 田晓丽, 杨成樾, 陈宏, 陆江. 一种碳化硅电力电子器件制备方法. CN: CN114843186A, 2022-08-02.
[63] 白云, 郝继龙, 刘新宇, 杨成樾, 陈宏, 汤益丹, 田晓丽, 陆江. 一种碳化硅器件的制备方法. CN: CN114843185A, 2022-08-02.
[64] 蔡晨, 郑旭强, 吴旦昱, 栾舰, 周磊, 武锦, 刘新宇. 一种高速接口发射机电路、芯片和电子设备. CN: CN114374384A, 2022-04-19.
[65] 陈晓娟, 刘新宇, 丁武昌, 张昇, 李艳奎, 刘果果, 袁婷婷, 郑英奎, 魏珂, 金智. 一种适用于划片后分立器件的提参建模方法. CN: CN114792081A, 2022-07-26.
[66] 周兴达, 刘果果, 袁婷婷, 魏珂, 刘新宇, 陈晓娟, 郑英奎. 一种紧凑型Doherty功率放大器. CN: CN114826165A, 2022-07-29.
[67] 元赛飞, 刘果果, 狄皓月, 袁婷婷, 陈晓娟, 魏珂, 刘新宇. 一种基于改进型级间匹配的Doherty功率放大器. CN: CN114826164A, 2022-07-29.
[68] 白云, 刘建君, 刘新宇, 郝继龙, 汤益丹, 陈宏, 田晓丽, 杨成樾, 陆江. 一种提高SiC场效应晶体管中栅氧化层可靠性的方法. CN: CN114783862A, 2022-07-22.
[69] 武锦, 徐潇迪, 郭轩, 贾涵博, 周磊, 吴旦昱, 刘新宇. 一种具有动态失调校准电路的比较器电路和电子设备. CN: CN114371753A, 2022-04-19.
[70] 康玄武, 赵志波, 郑英奎, 魏珂, 刘新宇. 降低氮化镓器件台面隔离漏电流的方法. CN: CN112802748A, 2021-05-14.
[71] 母凤文, 王鑫华, 黄森, 魏珂, 刘新宇. 一种多层半导体材料结构及制备方法. CN: CN114628229A, 2022-06-14.
[72] 闫伟, 罗卫军, 夏志颖, 刘果果, 袁婷婷, 魏珂, 金智, 刘新宇. 一种具有深回退区间的Doherty功率放大器. CN: CN112636697A, 2021-04-09.
[73] 张昇, 魏珂, 陈晓娟, 刘新宇. 高电子迁移率晶体管器件及其测试方法. CN: CN114497208A, 2022-05-13.
[74] 张昇, 魏珂, 陈晓娟, 刘新宇. 高电子迁移率晶体管器件及其测试方法. CN: CN114497208A, 2022-05-13.
[75] 张昇, 魏珂, 陈晓娟, 刘新宇. 一种基于HEMT器件的曲面场板结构及其制备方法. CN: CN114497198A, 2022-05-13.
[76] 张昇, 魏珂, 陈晓娟, 刘新宇. 高电子迁移率晶体管器件及其测试方法. CN: CN114497208A, 2022-05-13.
[77] 张昇, 魏珂, 陈晓娟, 刘新宇. 一种基于HEMT器件的曲面场板结构及其制备方法. CN: CN114497198A, 2022-05-13.
[78] 张昇, 魏珂, 陈晓娟, 刘新宇. 一种基于HEMT器件的曲面场板结构及其制备方法. CN: CN114497198A, 2022-05-13.
[79] 郭富强, 黄森, 王鑫华, 魏珂, 刘新宇. 氮化镓基电子器件及其制作方法. CN: CN112259459A, 2021-01-22.
[80] 刘新宇, 尤楠楠, 王盛凯, 汤益丹, 白云, 田晓丽, 陆江, 陈宏, 杨成樾. 一种半导体材料掺杂后退火的方法. CN: CN114334644A, 2022-04-12.
[81] 刘佳维, 陆江, 白云, 田晓丽, 陈宏, 汤益丹, 杨成樾, 刘新宇. 一种SiC功率MOSFET器件. CN: CN112103345A, 2020-12-18.
[82] 李兴, 周磊, 吴旦昱, 武锦, 刘新宇. 适用于超高速DAC的动态复位双边沿开关驱动电路及方法. CN: CN111900991A, 2020-11-06.
[83] 郑旭强, 陈腾, 吴旦昱, 周磊, 武锦, 刘新宇. 流水级运算装置和流水线模数转换器. CN: CN114070309A, 2022-02-18.
[84] 郑旭强, 辛可为, 吴旦昱, 周磊, 武锦, 刘新宇. 一种脉冲发生器和时钟倍频器. CN: CN113922817A, 2022-01-11.
[85] 郑旭强, 蔡晨, 吴旦昱, 周磊, 武锦, 刘新宇. 一种发射机驱动均衡装置、发射机驱动均衡方法和电子设备. CN: CN111711459B, 2021-08-31.
[86] 郑旭强, 栾舰, 吴旦昱, 周磊, 武锦, 刘新宇. 一种用于时间交织采样ADC的多相位时钟产生电路. CN: CN111600606A, 2020-08-28.
[87] 陶科, 贾锐, 姜帅, 刘新宇, 金智, 张立军, 王冠鹰, 欧阳晓平. 硅漂移探测器的制备方法. CN: CN111525002A, 2020-08-11.
[88] 姜帅, 贾锐, 陶科, 刘新宇, 金智, 张立军, 王冠鹰, 欧阳晓平. 漂移探测器及其加工方法. CN: CN111584656B, 2021-11-09.
[89] 贾锐, 陶科, 姜帅, 刘新宇, 金智, 张立军, 王冠鹰, 欧阳晓平. 硅漂移探测器及其加工方法. CN: CN111668320A, 2020-09-15.
[90] 陶科, 姜帅, 贾锐, 金智, 刘新宇. 一种异质结背接触太阳能电池及其形成方法. CN: CN111799348A, 2020-10-20.
[91] 王鑫华, 刘新宇, 黄森, 蒋浩杰, 魏珂, 殷海波, 樊捷. 一种匹配氮化镓材料的低界面态复合介质结构及制备方法. CN: CN111509036A, 2020-08-07.
[92] 冯旺, 田晓丽, 杨雨, 白云, 陆江, 刘新宇. N沟道SiC IGBT器件的制作方法. CN: CN111508837A, 2020-08-07.
[93] 朱耀辉, 周磊, 武锦, 吴旦昱, 刘新宇. 一种时钟信号恢复电路及方法、接口电路、信号同步方法. CN: CN111416622A, 2020-07-14.
[94] 韩忠霖, 白云, 刘新宇, 陈宏, 杨成樾, 汤益丹. 一种沟槽型MOSFET结构及其制作方法. CN: CN111403486A, 2020-07-10.
[95] 赵瑞, 黄森, 毕岚, 王鑫华, 魏珂, 刘新宇. GaN基功率晶体管结构及其制备方法. CN: CN111312815B, 2023-03-31.
[96] 赵瑞, 黄森, 毕岚, 王鑫华, 魏珂, 刘新宇. GaN基功率晶体管结构及其制备方法. CN: CN111312815A, 2020-06-19.
[97] 田晓丽, 冯旺, 杨雨, 陆江, 白云, 刘新宇. 抗闩锁绝缘栅双极晶体管器件. CN: CN111223922A, 2020-06-02.
[98] 田晓丽, 冯旺, 杨雨, 陆江, 白云, 杨成樾, 刘新宇. 一种碳化硅绝缘栅双极晶体管及其制作方法. CN: CN111048580A, 2020-04-21.
[99] 康玄武, 李鹏飞, 刘新宇, 郑英奎. GaN基集成器件及其制作方法. CN: CN111044575A, 2020-04-21.
[100] 康玄武, 刘新宇, 郑英奎, 魏珂. 氮化镓传感器件及其制备方法. CN: CN110988065A, 2020-04-10.
[101] 康玄武, 孙跃, 刘新宇, 郑英奎, 魏珂. 氮化镓基垂直器件及其制备方法. CN: CN111009600B, 2022-02-22.
[102] 刘新宇, 王成森, 殷海波, 黄森, 王鑫华, 魏珂, 黄健, 张超, 吴耀辉. 一种氮化镓电子器件的复合介质结构及制备方法. CN: CN110491939A, 2019-11-22.
[103] 刘新宇, 王成森, 殷海波, 黄森, 王鑫华, 魏珂, 黄健, 张超, 吴耀辉. 一种氮化镓电子器件的复合介质结构. CN: CN210467851U, 2020-05-05.
[104] 黄森, 施雯, 王鑫华, 魏珂, 刘新宇. 基于氮化镓基增强型器件的探测器及其制作方法. CN: CN112345614A, 2021-02-09.
[105] 黄森, 施雯, 王鑫华, 魏珂, 刘新宇. 基于氮化镓基增强型器件的探测器及其制作方法. CN: CN112345614B, 2023-07-21.
[106] 常虎东, 孙兵, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种硅衬底上外延GaAs的方法及制得的半导体器件. CN: CN110534409A, 2019-12-03.
[107] 常虎东, 孙兵, 刘洪刚, 金智, 刘新宇. 一种GaAs衬底上的外延转移方法及制得的半导体器件. CN: CN110600417A, 2019-12-20.
[108] 常虎东, 孙兵, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种衬底上的InP外延转移方法及制得的半导体器件. CN: CN110600385A, 2019-12-20.
[109] 常虎东, 孙兵, 翟明龙, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 晶圆异构对准方法及装置. CN: CN110600414A, 2019-12-20.
[110] 常虎东, 孙兵, 翟明龙, 苏永波, 丁芃, 刘洪刚, 金智, 刘新宇. 一种硅衬底上外延InP半导体的方法及制得的半导体器件. CN: CN110517948A, 2019-11-29.
[111] 吴南巡, 刘新宇, 周磊, 吴旦昱, 郭轩, 栾舰, 王东, 丁浩, 武锦, 金智. 并行数据同步发送的方法及系统. CN: CN110196825A, 2019-09-03.
[112] 刘新宇, 王盛凯, 汤益丹, 白云. 微波等离子体装置及等离子体激发方法. CN: CN110049614A, 2019-07-23.
[113] 黄森, 王鑫华, 刘新宇, 魏珂, 施雯. P型沟道GaN基结构及电子器件. CN: CN109962100A, 2019-07-02.
[114] 王元琨, 黄森, 王鑫华, 殷海波, 魏珂, 刘新宇. GaN基超结型垂直功率晶体管及其制作方法. CN: CN109888012A, 2019-06-14.
[115] 韩忠霖, 白云, 陈宏, 杨成樾, 陆江, 汤益丹, 田晓丽, 王臻星, 刘新宇. 一种双沟槽SS-SiC MOSFET结构. CN: CN109768091A, 2019-05-17.
[116] 刘新宇, 尤楠楠, 王盛凯, 白云. 原子态等离子体的形成及维持方法及半导体材料的等离子体处理方法. CN: CN109922590A, 2019-06-21.
[117] 刘新宇, 尤楠楠, 王盛凯, 白云. 原子态等离子体形成装置及其应用. CN: CN109905955A, 2019-06-18.
[118] 刘春雨, 王鑫华, 黄森, 魏珂, 刘新宇. GaN MIS-HEMT大信号PSPICE模型的建模方法及模型. CN: CN109933897A, 2019-06-25.
[119] 刘春雨, 王鑫华, 黄森, 魏珂, 刘新宇. GaN MIS-HEMT大信号PSPICE模型的建模方法及模型. CN: CN109933897B, 2023-04-07.
[120] 贾锐, 姜帅, 陶科, 刘赛, 刘新宇. 漂移探测器及其制作方法. CN: CN109671799A, 2019-04-23.
[121] 贾锐, 刘赛, 姜帅, 陶科, 刘新宇. 漂移探测器及其制作方法. CN: CN109671798A, 2019-04-23.
[122] 贾锐, 姜帅, 陶科, 刘赛, 刘新宇. 漂移探测器及其制作方法. CN: CN109671797A, 2019-04-23.
[123] 王磊, 孔延梅, 焦斌斌, 李博, 赵发展, 韩郑生, 罗家俊, 刘新宇. 一种可检真空度的真空玻璃及系统. CN: CN109665725A, 2019-04-23.
[124] 宋瓘, 白云, 陈宏, 汤益丹, 杨成樾, 田晓丽, 陆江, 刘新宇. 一种4H-SiC MOSFET功率器件及其制造方法. CN: CN109616523A, 2019-04-12.
[125] 王磊, 李博, 赵发展, 韩郑生, 罗家俊, 刘新宇. 一种单光子光源的制备方法及元器件. CN: CN109713094A, 2019-05-03.
[126] 杨成樾, 周正东, 罗烨辉, 陈宏, 白云, 李诚瞻, 刘国友, 刘新宇. 一种测量SiC衬底背面欧姆接触的比接触电阻率的方法. CN: CN109545699A, 2019-03-29.
[127] 杨成樾, 白云, 汤益丹, 陈宏, 田晓丽, 王臻星, 刘新宇. 一种碳化硅双沟槽MOSFET器件有源区的制备方法. CN: CN109545855A, 2019-03-29.
[128] 刘新宇, 王盛凯, 白云, 韩忠霖, 汤益丹, 田晓丽, 陈宏, 杨成樾. SiC氧化中SiC-SiO2界面碳杂质类型与位置分布的测定方法. CN: CN109540969B, 2021-01-05.
[129] 刘新宇, 王盛凯, 白云, 韩忠霖, 汤益丹, 田晓丽, 陈宏, 杨成樾. SiC氧化中SiC-SiO 2 界面碳杂质类型与位置分布的测定方法. CN: CN109540969A, 2019-03-29.
[130] 刘新宇, 王盛凯, 白云, 汤益丹, 韩忠霖, 田晓丽, 陈宏, 杨成樾. 基于交流电压下微波等离子体氧化的凹槽MOSFET器件制造方法. CN: CN109545687A, 2019-03-29.
[131] 刘新宇, 王盛凯, 白云, 汤益丹, 韩忠霖, 田晓丽, 陈宏, 杨成樾. 基于交流电压下微波等离子体的碳化硅氧化方法. CN: CN109494147A, 2019-03-19.
[132] 刘新宇, 王盛凯, 白云, 汤益丹, 韩忠霖, 杨成樾, 田晓丽, 陈宏. SiC氧化中SiC-SiO 2 界面碳残留浓度的测定方法及其应用. CN: CN109283298A, 2019-01-29.
[133] 顾航, 白云, 谭犇, 陈宏, 宋瓘, 张有润, 汤益丹, 田晓丽, 刘新宇. 一种环形温度传感器. CN: CN109341880A, 2019-02-15.
[134] 白云, 杨成樾, 汤益丹, 陈宏, 田晓丽, 刘新宇. 紫外探测器及其制备方法. CN: CN109301007A, 2019-02-01.
[135] 白云, 杨成樾, 汤益丹, 陈宏, 田晓丽, 刘新宇. 紫外探测器及其制备方法. CN: CN109301007A, 2019-02-01.
[136] 汤益丹, 刘新宇, 白云, 董升旭, 杨成樾. 半导体器件及其制备方法. CN: CN109216436B, 2021-08-03.
[137] 田晓丽, 谭犇, 宋瓘, 白云, 杨成樾, 刘新宇. 一种绝缘栅双极晶体管及其制作方法. CN: CN109244127A, 2019-01-18.
[138] 刘新宇, 王成森, 王鑫华, 王泽卫, 黄森, 康玄武, 魏珂, 黄健. 一种基于纳米沟道阵列的薄势垒GaN SBD器件. CN: CN208873725U, 2019-05-17.
[139] 谭犇, 田晓丽, 白云, 宋瓘, 顾航, 杨成樾, 汤益丹, 陈宏, 刘新宇. RC-IGBT器件及其制备方法. CN: CN108649068A, 2018-10-12.
[140] 王鑫华, 刘新宇, 黄森, 魏珂, 蒋浩杰, 李俊峰, 王文武. 一种匹配(Al,In)GaN材料的超低界面态界面结构及其制备方法. CN: CN108565221A, 2018-09-21.
[141] 刘新宇, 王成森, 黄森, 王鑫华, 康玄武, 魏珂, 黄健. GaN基垂直型功率晶体管器件. CN: CN209119111U, 2019-07-16.
[142] 刘新宇, 王成森, 黄森, 王鑫华, 康玄武, 魏珂, 黄健. GaN基垂直型功率晶体管器件及其制作方法. CN: CN108807542A, 2018-11-13.
[143] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 基于微波等离子体氧化的凹槽MOSFET器件的制造方法. CN: CN108735607A, 2018-11-02.
[144] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 具有微孔微纳结构双耦合谐振腔的微波等离子体发生装置. CN: CN108770174A, 2018-11-06.
[145] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 基于两步微波等离子体氧化的凹槽MOSFET器件的制造方法. CN: CN108766887A, 2018-11-06.
[146] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 用于微波等离子体发生装置的微孔微纳结构双耦合谐振腔. CN: CN108770175A, 2018-11-06.
[147] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 基于微波等离子体氧化的凹槽MOSFET器件的制造方法. CN: CN108735607A, 2018-11-02.
[148] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 基于两步微波等离子体氧化的碳化硅氧化方法. CN: CN108666206A, 2018-10-16.
[149] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 用于SiC等离子体氧化的微波等离子体发生装置. CN: CN108735570A, 2018-11-02.
[150] 刘新宇, 汤益丹, 王盛凯, 白云, 杨成樾. 基于微波等离子体的碳化硅氧化方法. CN: CN108584963A, 2018-09-28.
[151] 刘新宇, 黄森, 王鑫华, 康玄武, 魏珂. 一种GaN基增强型功率电子器件及其制作方法. CN: CN108598164A, 2018-09-28.
[152] 康玄武, 刘新宇, 郑英奎, 魏珂. 一种横向氮化镓功率整流器件及其制作方法. CN: CN108365017A, 2018-08-03.
[153] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 一种横向氮化镓功率整流器件及其制作方法. CN: CN108365018A, 2018-08-03.
[154] 汤益丹, 刘新宇, 白云, 董升旭, 杨成樾. 具有CSL输运层的SiC沟槽结势垒肖特基二极管及其制作方法. CN: CN108346688A, 2018-07-31.
[155] 董升旭, 白云, 田晓丽, 汤益丹, 杨成樾, 陈宏, 王臻星, 刘新宇. 超级结肖特基二极管与其制作方法. CN: CN108336129A, 2018-07-27.
[156] 康玄武, 刘新宇, 郑英奎, 黄森, 王鑫华, 魏珂. 一种垂直结构的氮化镓功率二极管器件及其制作方法. CN: CN108198758A, 2018-06-22.
[157] 康玄武, 刘新宇, 郑英奎, 黄森, 王鑫华, 魏珂. 一种垂直结构的氮化镓功率二极管器件及其制作方法. CN: CN108198865A, 2018-06-22.
[158] 王鑫华, 王泽卫, 黄森, 魏珂, 刘新宇. 基于应变调控的增强型GaN基FinFET结构. CN: CN107919386A, 2018-04-17.
[159] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基单片功率变换器及其制作方法. CN: CN108022925A, 2018-05-11.
[160] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基单片功率逆变器及其制作方法. CN: CN107887383A, 2018-04-06.
[161] 王鑫华, 黄森, 魏珂, 刘新宇. GaN与Si异质键合结构. CN: CN107768347A, 2018-03-06.
[162] 杨成樾, 王臻星, 白云, 汤益丹, 陈宏, 田晓丽, 刘新宇. SiC衬底的图形化方法. CN: CN108063088A, 2018-05-22.
[163] 张国斌, 赵妙, 金智, 许恒宇, 何在田, 万彩萍, 刘新宇. 一种碳化硅功率器件封装结构. CN: CN107768326A, 2018-03-06.
[164] 何在田, 张国斌, 许恒宇, 赵妙, 万彩萍, 金智, 刘新宇. 一种碳化硅器件结终端制作方法. CN: CN107706108A, 2018-02-16.
[165] 刘新宇, 王文, 汤益丹, 张有润, 白云, 郭元旭, 徐少东, 杨成樾. 一种碳化硅功率器件终端结构及其制作方法. CN: CN107731905A, 2018-02-23.
[166] 刘新宇, 郭元旭, 白云, 邓小川, 陈宏, 杨成樾, 汤益丹, 田晓丽, 王文, 刁绅, 徐少东. 一种碳化硅器件及其制作方法. CN: CN107658215A, 2018-02-02.
[167] 田晓丽, 白云, 杨成樾, 汤益丹, 陈宏, 刘新宇. 一种碳化硅功率器件终端及其制作方法. CN: CN107658213A, 2018-02-02.
[168] 田晓丽, 白云, 杨成樾, 汤益丹, 陈宏, 刘新宇. 一种碳化硅器件终端及其制作方法. CN: CN107507859A, 2017-12-22.
[169] 田晓丽, 白云, 杨成樾, 汤益丹, 陈宏, 刘新宇. 碳化硅功率器件终端及其制作方法. CN: CN107293599A, 2017-10-24.
[170] 徐少东, 汤益丹, 白云, 杨成樾, 刘新宇. 一种基于台面多区复合JTE终端结构的器件及其制作方法. CN: CN107275382A, 2017-10-20.
[171] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. GaN基HEMT器件栅极结构. CN: CN106549051A, 2017-03-29.
[172] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 氮化镓基功率开关器件及其制作方法. CN: CN106601798A, 2017-04-26.
[173] 康玄武, 刘新宇, 黄森, 王鑫华, 魏珂. 氮化镓基功率二极管及其制作方法. CN: CN106601825A, 2017-04-26.
[174] 贾锐, 姜帅, 陶科, 孙恒超, 戴小宛, 金智, 刘新宇. 一种背结背接触太阳能电池. CN: CN106653887A, 2017-05-10.
[175] 孙昀, 贾锐, 姜帅, 陶科, 孙恒超, 戴小宛, 金智, 刘新宇. 一种背结背接触太阳能电池. CN: CN106531816A, 2017-03-22.
[176] 贾锐, 姜帅, 陶科, 孙恒超, 戴小宛, 金智, 刘新宇. 一种背结背接触太阳能电池. CN: CN106684160A, 2017-05-17.
[177] 刘华森, 吴旦昱, 武锦, 周磊, 刘新宇. 一种多级折叠内插型模数转换器及其译码方法. CN: CN106656189A, 2017-05-10.
[178] 刘华森, 吴旦昱, 周磊, 武锦, 刘新宇. 一种折叠率为3的折叠内插型模数转换器及其纠错方法. CN: CN106656184A, 2017-05-10.
[179] 黄森, 刘新宇, 康玄武, 王鑫华, 魏珂. 增强型GaN基功率晶体管器件及其制作方法. CN: CN106783612A, 2017-05-31.
[180] 贾锐, 桂羊羊, 孙恒超, 陶科, 戴小宛, 金智. 一种石墨烯/砷化镓太阳电池的制备方法. CN: CN106449791B, 2018-02-02.
[181] 孙恒超, 贾锐, 陶科, 戴小宛, 金智, 刘新宇. 一种石墨烯/砷化镓太阳电池. CN: CN106784068A, 2017-05-31.
[182] 贾锐, 桂羊羊. 一种石墨烯/砷化镓太阳电池. CN: CN106449790A, 2017-02-22.
[183] 孙恒超, 贾锐, 陶科, 戴小宛, 金智, 刘新宇. 一种石墨烯/砷化镓太阳电池的制备方法. CN: CN106409988A, 2017-02-15.
[184] 黄森, 刘新宇, 王鑫华, 康玄武, 魏珂. 一种GaN基增强型电子器件的材料结构. CN: CN106783945A, 2017-05-31.
[185] 郭轩, 武锦, 周磊, 吴旦昱, 刘新宇. 一种基于动态电阻单元的伪差分式半导体只读存储阵列. CN: CN106653088A, 2017-05-10.
[186] 黄森, 刘新宇, 王鑫华, 魏珂. Semiconductor Device and Method for Manufacturing the Same. US15/333,674, 2016-09-25.
[187] 刘新宇, 康玄武, 王鑫华, 黄森, 魏珂. GaN增强型器件制备方法及形成的GaN增强型器件. CN: CN106206295A, 2016-12-07.
[188] 刘新宇, 康玄武, 王鑫华, 黄森, 魏珂, 王文武, 侯瑞兵. 氮化镓器件介质生长方法及系统. CN: CN105957824A, 2016-09-21.
[189] 黄森, 刘新宇, 王鑫华, 魏珂, 包琦龙, 王文武, 赵超. 一种GaN基功率电子器件及其制备方法. CN: CN105895526A, 2016-08-24.
[190] 王琦",null,null,"刘新宇. 数字移相器. CN: CN107306123A, 2017-10-31.
[191] 周磊, 吴旦昱, 黄银坤, 武锦, 金智, 刘新宇. 具有延迟偏差检测和校准功能的数模转换器. CN: CN105322965A, 2016-02-10.
[192] 刘新宇, 黄森, 王鑫华, 魏珂. III族氮化物低损伤刻蚀方法. CN: CN105355550A, 2016-02-24.
[193] 刘新宇, 王鑫华, 黄森, 魏珂, 王文武, 侯瑞兵. 面向GaN器件的介质生长系统及其操作方法. CN: CN105470169A, 2016-04-06.
[194] 刘新宇, 赵妙, 许恒宇, 裴紫微, 金智, 李俊峰, 万彩萍. 一种SiC基MOSFET器件P型欧姆接触的制备方法. CN: CN105355549A, 2016-02-24.
[195] 黄森, 刘新宇, 王鑫华, 魏珂. 一种GaN基增强型功率电子器件及其制备方法. CN: CN105355555A, 2016-02-24.
[196] 杨成樾, 申华军, 吴佳, 汤益丹, 白云, 李诚瞻, 刘国友, 刘新宇. 一种氧化硅的各向异性湿法腐蚀工艺中控制倾角的方法. CN: CN105225943A, 2016-01-06.
[197] 黄森, 刘新宇, 王鑫华, 魏珂, 包琦龙, 罗军, 赵超. 一种III族氮化物电子器件低温欧姆接触的制作方法. CN: CN105390382A, 2016-03-09.
[198] 王鑫华, 黄森, 魏珂, 刘新宇. GaN基器件中阻止欧姆接触铝元素横向扩散的方法. CN: CN105206524A, 2015-12-30.
[199] 汤益丹, 申华军, 白云, 周静涛, 杨成樾, 刘新宇, 李诚瞻, 刘国友. 碳化硅MOSFET器件及其制作方法. CN: CN105161539A, 2015-12-16.
[200] 唐亚超, 申华军, 彭朝阳, 白云, 汤益丹, 李诚瞻, 刘国友, 刘新宇. 一种碳化硅MOSFET沟道自对准工艺实现方法. CN: CN105070663A, 2015-11-18.
[201] 唐亚超, 申华军, 白云, 汤益丹, 李诚瞻, 刘国友, 刘新宇. 一种沟道自对准的碳化硅MOSFET结构及其制造方法. CN: CN105185831A, 2015-12-23.
[202] 刘洪刚, 常虎东, 刘新宇. 具有微纳结构钝化层的半导体器件. CN: CN106159049A, 2016-11-23.
[203] 刘洪刚, 常虎东, 刘新宇. 新型图形化衬底结构及器件. CN: CN106159051A, 2016-11-23.
[204] 刘新宇, 黄森, 王鑫华, 魏珂, 王文武, 李俊峰, 赵超. 低界面态器件及其制造方法. CN: CN104658894A, 2015-05-27.
[205] 贾锐, 冯泽增, 窦丙飞, 金智, 刘新宇. 一种结合氧化锌纳米结构超小绒面太阳电池及其制备方法. CN: CN104465814A, 2015-03-25.
[206] 白云, 申华军, 汤益丹, 杨成樾, 王弋宇, 于海龙, 彭朝阳, 刘新宇. 一种场限环结终端结构的优化设计方法. CN: CN104409477A, 2015-03-11.
[207] 汤益丹, 申华军, 白云, 周静涛, 杨成樾, 刘新宇. 一种插入层复合结构及其制作方法. CN: CN104393031A, 2015-03-04.
[208] 霍瑞彬, 申华军, 白云, 汤益丹, 刘新宇. 碳化硅金属氧化物半导体场效应晶体管. CN: CN104409501B, 2017-06-20.
[209] 霍瑞彬, 申华军, 白云, 汤益丹, 刘新宇. 碳化硅金属氧化物半导体场效应晶体管. CN: CN104409501A, 2015-03-11.
[210] 罗卫军, 陈晓娟, 袁婷婷, 庞磊, 刘新宇. 一种数字移相器. CN: CN103944534A, 2014-07-23.
[211] 罗卫军, 陈晓娟, 袁婷婷, 庞磊, 刘新宇. 场效应晶体管液体传感器及其制备方法. CN: CN103928525A, 2014-07-16.
[212] 周磊, 吴旦昱, 江帆, 武锦, 金智, 刘新宇. 一种四相位数模转换方法及数模转换器. CN: CN105007081A, 2015-10-28.
[213] 陈晓娟, 吴旦昱, 李滨, 刘新宇. 一种微波功率分配器. CN: CN103956552A, 2014-07-30.
[214] 陈晓娟, 袁婷婷, 罗卫军, 和致经, 刘新宇. 一种金属-介质-金属结构电容的制作方法. CN: CN103928301A, 2014-07-16.
[215] 袁婷婷, 魏珂, 郑英奎, 刘新宇. 一种监控AlGaN/GaN HEMT凹栅槽刻蚀的方法. CN: CN103745944A, 2014-04-23.
[216] 刘果果, 魏珂, 孔欣, 刘新宇. 一种氮化镓基场效应晶体管的T型栅的制作方法. CN: CN103700583A, 2014-04-02.
[217] 魏珂, 刘果果, 孔欣, 樊杰, 黄森, 刘新宇. 一种降低背孔工艺中对等离子体刻蚀机腔体污染的方法. CN: CN103730348A, 2014-04-16.
[218] 魏珂, 刘果果, 孔欣, 樊杰, 黄森, 刘新宇. 一种提高背孔工艺中金属Ni掩膜选择比的方法. CN: CN103730340A, 2014-04-16.
[219] 赵妙, 刘新宇, 郑英奎, 李艳奎, 欧阳思华. GaN基器件肖特基接触可靠性的评价方法. CN: CN103728545A, 2014-04-16.
[220] 赵妙, 刘新宇, 魏珂, 孔欣, 王兵, 郑英奎, 李艳奎, 欧阳思华. 一种GaN基半导体器件欧姆接触高压可靠性的评价方法. CN: CN103713252A, 2014-04-09.
[221] 刘果果, 魏珂, 孔欣, 刘新宇. 一种深亚微米U型栅槽的制作方法. CN: CN103715077A, 2014-04-09.
[222] 黄森, 刘新宇, 王鑫华, 魏珂, 刘果果, 章晋汉, 郑英奎, 陈向东, 张昊翔, 封飞飞, 万远涛. GaN基高电子迁移率晶体管的低温无金欧姆接触的制作方法. CN: CN103606516A, 2014-02-26.
[223] 王鑫华, 刘新宇, 黄森, 郑英奎, 魏珂, 陈向东, 张昊翔, 封飞飞, 万远涛. 一种通过瞬态电流谱提取缺陷时间常数的方法. CN: CN103593581A, 2014-02-19.
[224] 韩林超, 申华军, 白云, 汤益丹, 许恒宇, 王弋宇, 杨谦, 刘新宇. 一种在SiC衬底背面制备欧姆接触的方法. CN: CN103578960A, 2014-02-12.
[225] 刘新宇, 许恒宇, 汤益丹, 蒋浩杰, 赵玉印, 申华军, 白云, 杨谦. 一种SiC肖特基二极管及其制作方法. CN: CN103579375A, 2014-02-12.
[226] 刘新宇, 许恒宇, 汤益丹, 蒋浩杰, 赵玉印, 申华军, 白云, 杨谦. 一种宽禁带功率器件场板的制造方法. CN: CN103606515A, 2014-02-26.
[227] 刘新宇, 汤益丹, 许恒宇, 蒋浩杰, 赵玉印, 申华军, 白云, 杨谦. 一种精确控制碳化硅高温离子注入掩模陡直性的方法. CN: CN103560078A, 2014-02-05.
[228] 刘新宇, 许恒宇, 汤益丹, 蒋浩杰, 赵玉印, 申华军, 白云, 杨谦. 带有选择性截止层的碳化硅高温离子注入掩模的制造方法. CN: CN103578942A, 2014-02-12.
[229] 孔欣, 魏珂, 刘新宇, 刘果果. 减小高电子迁移率晶体管源漏区域欧姆接触电阻率的方法. CN: CN103426740A, 2013-12-04.
[230] 贾锐, 邢钊, 陈晨, 张巍, 张代生, 金智, 刘新宇. 一种制备晶体硅双发射极背结背接触太阳能电池的方法. CN: CN103400904A, 2013-11-20.
[231] 梁擎擎, 金智, 钟汇才, 朱慧珑, 刘新宇. 一种半导体结构及其制造方法. 中国: CN104282568B, 2018-07-13.
[232] 贾锐, 丁武昌, 陈晨, 金智, 刘新宇. 一种高效晶体硅异质结太阳能电池的制备方法. CN: CN103227247A, 2013-07-31.
[233] 贾锐, 王仕建, 陈晨, 金智, 刘新宇. 一种具有背面电极点接触结构的太阳能电池的制备方法. CN: CN103227242A, 2013-07-31.
[234] 贾锐, 窦丙飞, 陈晨, 金智, 刘新宇. 一种超小绒面太阳电池及其制备方法. CN: CN103219426A, 2013-07-24.
[235] 贾锐, 杨勇洲, 陈晨, 金智, 刘新宇. 一种用于超小绒面高效太阳电池的电极结构的制备方法. CN: CN103219425A, 2013-07-24.
[236] 贾锐, 林阳, 陈晨, 金智, 刘新宇. 一种高陷光纳米结构单面制绒的实现方法. CN: CN103219427A, 2013-07-24.
[237] 贾锐, 窦丙飞, 陈晨, 金智, 刘新宇. 结合氧化锌纳米线的硅超小绒面太阳电池及其制备方法. CN: CN103236451A, 2013-08-07.
[238] 贾锐, 乔秀梅, 丁武昌, 陈晨, 崔冬萌, 金智, 刘新宇. 一种石墨烯径向异质结太阳能电池及其制备方法. CN: CN103219413A, 2013-07-24.
[239] 贾锐, 张悦, 窦丙飞, 陈晨, 金智, 刘新宇. 一种制备硅基纳米结构高效太阳电池的方法. CN: CN103236467A, 2013-08-07.
[240] 王鑫华, 庞磊, 刘新宇. 一种获取二维电子气局域化程度的表征因子的方法. CN: CN102945805A, 2013-02-27.
[241] 白云, 刘可安, 申华军, 汤益丹, 王弋宇, 韩林超, 刘新宇, 李诚瞻, 史晶晶. 一种SiC肖特基二极管及其制作方法. 中国: CN103000697A, 2013-03-27.
[242] 白云, 申华军, 汤益丹, 王弋宇, 韩林超, 刘新宇. 一种具有增益的紫外探测器结构及其制备方法. CN: CN102931272A, 2013-02-13.
[243] 白云, 申华军, 汤益丹, 王弋宇, 韩林超, 刘新宇. 一种测量高Al组分AlGaN材料刻蚀诱生界面态参数的方法. CN: CN102944588A, 2013-02-27.
[244] 白云, 刘可安, 申华军, 汤益丹, 王弋宇, 韩林超, 刘新宇, 李诚瞻, 史晶晶. 一种SiC结势垒肖特基二极管及其制作方法. CN: CN103000698A, 2013-03-27.
[245] 赵妙, 郑英奎, 刘新宇, 彭铭曾, 李艳奎, 欧阳思华, 魏珂. 双沟道晶体管及其制备方法. CN: CN103681830A, 2014-03-26.
[246] 贾锐, 张巍, 陈晨, 张代生, 金智, 刘新宇. 一种制备p+掺杂层与n+前表面场的方法. CN: CN102820382A, 2012-12-12.
[247] 罗卫军, 陈晓娟, 袁婷婷, 庞磊, 刘新宇. 氮化镓基液体传感器及其制备方法. CN: CN102830137A, 2012-12-19.
[248] 罗卫军, 陈晓娟, 杨成樾, 刘新宇. 高频内匹配功率器件的封装方法. CN: CN102832145A, 2012-12-19.
[249] 汤益丹, 刘可安, 申华军, 白云, 李博, 王弋宇, 刘新宇, 李诚瞻, 史晶晶. 一种实现P型SiC材料低温欧姆合金退火的方法. CN: CN102931054A, 2013-02-13.
[250] 汤益丹, 刘可安, 申华军, 白云, 李博, 王弋宇, 刘新宇, 李诚瞻, 史晶晶. 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法. CN: CN102931224A, 2013-02-13.
[251] 戈勤, 郑英奎, 彭铭曾, 刘新宇. 内匹配的高频大功率晶体管. CN: CN102769441A, 2012-11-07.
[252] 戈勤, 郑英奎, 彭铭曾, 刘新宇. 内匹配的高频大功率晶体管. CN: CN202798612U, 2013-03-13.
[253] 赵妙, 刘新宇, 郑英奎, 彭铭曾, 欧阳思华, 李艳奎. 一种评价半导体器件肖特基电流输运方式的方法. CN: CN102768704A, 2012-11-07.
[254] 赵妙, 阎理贺, 刘新宇, 郑英奎. 确定AlGaN/GaN基异质结沟道载流子寿命的方法. CN: CN102736011A, 2012-10-17.
[255] 戈勤, 郑英奎, 彭铭曾, 刘新宇. 一种微波放大器的设计方法. CN: CN102739167A, 2012-10-17.
[256] 贾锐, 白阳, 金智, 刘新宇. 太赫兹的磷化铟耿氏管制备方法. CN: CN102751385A, 2012-10-24.
[257] 武德起, 贾锐, 金智, 刘新宇, 叶甜春. 一种耿氏二极管、其制备方法及毫米波振荡器. CN: CN102738392A, 2012-10-17.
[258] 武锦, 陈建武, 吴旦昱, 周磊, 刘新宇, 金智. 一种驱动容性负载的有源下拉电路. CN: CN102664617A, 2012-09-12.
[259] 刘新宇, 陈建武, 吴旦昱, 周磊, 武锦, 金智. 电流共享型存储器的地址解码器. CN: CN102637450A, 2012-08-15.
[260] 刘新宇, 陈建武, 吴旦昱, 周磊, 武锦, 金智. 一种伪差分式存储阵列. CN: CN102637449A, 2012-08-15.
[261] 陈建武, 吴旦昱, 周磊, 刘新宇, 武锦, 金智. 低功耗流水线结构的相位累加器. CN: CN102638261A, 2012-08-15.
[262] 江帆, 林庆良, 周磊, 陈建武, 吴旦昱, 武锦, 金智, 刘新宇. 折叠信号放大器. CN: CN102594268A, 2012-07-18.
[263] 袁婷婷, 陈晓娟, 魏珂, 刘新宇, 李滨. 一种对晶圆表面进行处理的方法. CN: CN103311094A, 2013-09-18.
[264] 袁婷婷, 刘新宇, 陈晓娟, 罗卫军, 庞磊. 基于钨金属的电子束对准标记的制作方法. CN: CN103311144A, 2013-09-18.
[265] 贾锐, 窦丙飞, 陈晨, 李昊峰, 金智, 刘新宇. 一种用于太阳电池的硅基纳米结构及其制备方法. CN: CN102593261A, 2012-07-18.
[266] 梁擎擎, 钟汇才, 朱慧珑, 金智, 刘新宇, 陈大鹏, 叶甜春. 模数转换器. 中国: CN103297050A, 2013-09-11.
[267] 梁擎擎, 钟汇才, 朱慧珑, 金智, 刘新宇, 陈大鹏, 叶甜春. 石墨烯器件. CN: CN103296071A, 2013-09-11.
[268] 刘果果, 魏珂, 黄俊, 刘新宇. 一种T型栅的制备方法. CN: CN102569054A, 2012-07-11.
[269] 宁晓曦, 姚鸿飞, 金智, 刘新宇. 一种基于DHBT工艺的有源毫米波亚谐波单片集成混频器电路. CN: CN102522953A, 2012-06-27.
[270] 汤益丹, 申华军, 白云, 李博, 周静涛, 刘焕明, 杨成樾, 刘新宇. 多能离子注入实现阶梯状掺杂浓度分布的方法. CN: CN102446721A, 2012-05-09.
[271] 白云, 申华军, 汤益丹, 李博, 周静涛, 杨成樾, 刘焕明, 刘新宇. SiC肖特基二极管及其制作方法. CN: CN102376779A, 2012-03-14.
[272] 李博, 申华军, 白云, 汤益丹, 刘焕明, 周静涛, 杨成樾, 刘新宇. 一种三层复合离子注入阻挡层及其制备、去除方法. CN: CN102496559A, 2012-06-13.
[273] 白云, 申华军, 汤益丹, 李博, 周静涛, 杨成樾, 刘焕明, 刘新宇. SiC结势垒肖特基二极管及其制作方法. CN: CN102437201A, 2012-05-02.
[274] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种对超薄厚度GaAs晶片进行镜面抛光减薄的方法. CN: CN102427034A, 2012-04-25.
[275] 李博, 刘洪刚, 刘新宇. 一种二维电子气结构的霍尔元件及其制备方法. CN: CN102403450A, 2012-04-04.
[276] 刘果果",null,null,"刘新宇. HEMT器件及其制造方法. CN: CN103117221A, 2013-05-22.
[277] 梁擎擎, 金智, 钟汇才, 朱慧珑, 刘新宇. 石墨烯器件及其制造方法. CN: CN103107077A, 2013-05-15.
[278] 魏珂, 刘新宇, 黄俊, 刘果果. 一种T型栅HEMT器件及其制作方法. CN: CN102361010A, 2012-02-22.
[279] 黄俊, 魏珂, 刘果果, 樊捷, 刘新宇. 降低HEMT器件栅槽刻蚀损伤的方法. CN: CN102339748A, 2012-02-01.
[280] 魏珂, 刘新宇, 黄俊, 刘果果. 一种T型栅HEMT器件及其制作方法. CN: CN102354666A, 2012-02-15.
[281] 李博, 申华军, 白云, 汤益丹, 刘焕明, 周静涛, 杨成樾, 刘新宇. 防止钝化层过刻蚀的方法. CN: CN103021840A, 2013-04-03.
[282] 赵妙, 刘新宇, 罗卫军, 郑英奎, 陈晓娟, 彭铭曾, 李艳奎. 一种测量GaN基器件热可靠性的方法. CN: CN102955113A, 2013-03-06.
[283] 赵妙, 刘新宇, 郑英奎, 彭铭曾, 魏珂, 欧阳思华. 对GaN基器件的直流稳态功率老化进行预筛选的方法. CN: CN102955112A, 2013-03-06.
[284] 王建辉, 刘新宇, 王鑫华, 庞磊, 袁婷婷. 一种多栅指GaN HEMTs. CN: CN102270659A, 2011-12-07.
[285] 王建辉, 刘新宇, 王鑫华, 庞磊, 陈晓娟, 袁婷婷, 罗卫军. 一种测量FET沟道温度的方法. CN: CN102313613B, 2013-04-24.
[286] 王建辉, 刘新宇, 王鑫华, 庞磊, 陈晓娟, 袁婷婷, 罗卫军. 一种测量FET沟道温度的装置及方法. CN: CN102313613A, 2012-01-11.
[287] 赵妙, 刘新宇, 郑英奎, 欧阳思华, 李艳奎. 确定场效应管老化条件的方法、场效应管老化方法及场效应管筛选方法. CN: CN102832102A, 2012-12-19.
[288] 魏珂, 黄俊, 刘果果, 李诚瞻, 刘新宇. SiC衬底的减薄方法. CN: CN102214568A, 2011-10-12.
[289] 武德起, 贾锐, 陈晨, 孟彦龙, 刘新宇, 叶甜春. 一种叉指型背接触式太阳能电池及其制备方法. CN: CN102800738A, 2012-11-28.
[290] 孔欣, 魏珂, 刘新宇, 黄俊, 刘果果. 一种制作U型栅脚T型栅结构的方法. CN: CN102201334A, 2011-09-28.
[291] 彭铭曾, 郑英奎, 魏珂, 刘新宇. 一种增强型AlN/GaN高电子迁移率晶体管及其制作方法. CN: CN102789982A, 2012-11-21.
[292] 周静涛, 刘焕明, 申华军, 杨成樾, 贾锐, 刘新宇. 一种光传感总磷检测系统及检测方法. CN: CN102252981A, 2011-11-23.
[293] 贾锐, 李昊峰, 陈晨, 岳会会, 刘新宇, 叶甜春, 路甬祥. 一种硅基纳米柱阵列太阳能电池的制备方法. CN: CN102646750A, 2012-08-22.
[294] 贾锐, 岳会会, 刘新宇, 叶甜春. 具有超低纳米减反结构准黑硅高效太阳能电池的制备方法. CN: CN102646751A, 2012-08-22.
[295] 汪宁, 陈中子, 陈晓娟, 刘新宇, 罗卫军, 庞磊. 一种砷化镓基微波单片集成电路功率器件的制作方法. CN: CN102623336A, 2012-08-01.
[296] 贾锐, 窦丙飞, 岳会会, 陈晨, 李昊峰, 刘新宇. 太阳能电池、其减反结构及形成方法. CN: CN102130210A, 2011-07-20.
[297] 彭铭曾, 罗卫军, 郑英奎, 陈晓娟, 刘新宇. 高击穿氮化镓基场效应晶体管器件及其制作方法. CN: CN102569390A, 2012-07-11.
[298] 刘新宇, 蒲颜, 庞磊, 袁婷婷, 罗卫军, 陈晓娟. AlGaN/GaN HEMT小信号模型的参数提取方法. CN: CN102542077A, 2012-07-04.
[299] 戈勤, 陈晓娟, 刘新宇. 一种基于AnsoftHFSS制备微波混合集成电路的方法. CN: CN102542075A, 2012-07-04.
[300] 汪宁, 陈中子, 陈晓娟, 刘新宇, 罗卫军, 庞磊. 砷化镓衬底改进的快速减薄方法. CN: CN102543665A, 2012-07-04.
[301] 蒲颜, 庞磊, 陈晓娟, 欧阳思华, 李艳奎, 刘新宇. 一种GaN HEMT器件跨导频散特性的测量系统及方法. CN: CN102565650A, 2012-07-11.
[302] 刘新宇, 周静涛, 杨成樾, 刘焕明, 申华军, 吴德馨. 采用三维排气孔装置的SOI/III-V整片晶片键合方法. CN: CN102487024A, 2012-06-06.
[303] 武德起, 贾锐, 陈晨, 李昊峰, 吴大卫, 刘新宇, 叶甜春. 一种制备立体结构高效太阳能电池的方法. CN: CN102487105A, 2012-06-06.
[304] 刘焕明, 周静涛, 杨成樾, 李博, 刘新宇. 一种对深盲孔进行电镀的方法. CN: CN102485965A, 2012-06-06.
[305] 刘新宇, 周静涛, 杨成樾, 刘焕明, 刘洪刚, 申华军, 吴德馨. 一种硅基光电异质集成中的多量子阱混杂能带方法. CN: CN102487104A, 2012-06-06.
[306] 刘新宇, 周静涛, 刘洪刚, 杨成樾, 刘焕明, 申华军, 吴德馨. 一种适用于芯片内光互连系统的硅基光电异质集成方法. CN: CN102487046A, 2012-06-06.
[307] 王显泰, 吴旦昱, 金智, 刘新宇. 毫米波频率源装置. CN: CN102480281A, 2012-05-30.
[308] 魏珂, 郑英奎, 刘新宇, 刘果果, 彭明曾. 监控栅槽刻蚀的方法. CN: CN102479732A, 2012-05-30.
[309] 庞磊, 陈晓娟, 陈中子, 罗卫军, 袁婷婷, 蒲颜, 刘新宇. 一种适用于氮化镓微波单片集成电路的场板金属制备方法. CN: CN102479745A, 2012-05-30.
[310] 王显泰, 吴旦昱, 刘洪刚, 刘新宇. 高频频率源装置. CN: CN102468851A, 2012-05-23.
[311] 梁擎擎, 金智, 王文武",null,"刘新宇",null,"叶甜春. 一种石墨烯器件及其制造方法. CN: CN102468333A, 2012-05-23.
[312] 魏珂, 刘新宇, 黄俊, 刘果果, 罗卫军. 控制背孔剖面形状的方法. CN: CN102456611A, 2012-05-16.
[313] 魏珂, 黄俊, 刘果果, 刘新宇. 控制背孔剖面形状的方法. CN: CN102456610A, 2012-05-16.
[314] 周静涛, 刘新宇, 申华军, 张慧慧, 杨成樾, 刘焕明. 基于光子晶体自准直效应的光模数转换器量化方法. CN: CN102445809A, 2012-05-09.
[315] 梁擎擎, 金智, 王文武, 钟汇才, 刘新宇, 朱慧珑. 一种石墨烯器件及其制造方法. CN: CN102054869A, 2011-05-11.
[316] 赵妙, 王鑫华, 刘新宇, 郑英奎, 欧阳思华, 魏珂, 李艳奎. 一种通过肖特基测试图形检测GaN基HEMT可靠性的方法. CN: CN102346232A, 2012-02-08.
[317] 赵妙, 王鑫华, 刘新宇, 郑英奎, 李艳奎, 欧阳思华, 魏珂. 一种GaN基HEMT器件的可靠性评估方法. CN: CN102338846A, 2012-02-01.
[318] 罗卫军, 陈晓娟, 刘新宇. 一种适用于高频功率器件的稳定网络. CN: CN102340290A, 2012-02-01.
[319] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 改善氮化镓基场效应管后道工艺的方法. CN: CN102339751A, 2012-02-01.
[320] 黄俊, 魏珂, 刘新宇, 刘果果, 樊捷. 一种提高GaN HEMT栅槽刻蚀可重复性的方法. CN: CN102315123A, 2012-01-11.
[321] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种去除高熔点黏附剂的方法. CN: CN102310059A, 2012-01-11.
[322] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种高硬度微米研磨液及其配制方法. CN: CN102311717A, 2012-01-11.
[323] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种纳米级抛光液及其调配方法. CN: CN102311706A, 2012-01-11.
[324] 刘果果, 魏珂, 黄俊, 刘新宇. 一种提高AlGaN/GaN HEMT频率特性的方法. CN: CN102299071A, 2011-12-28.
[325] 赵妙, 王鑫华, 刘新宇, 郑英奎, 魏珂. 一种检测器件肖特基漏电模式的方法. CN: CN102298100A, 2011-12-28.
[326] 周静涛, 贾锐, 刘焕明, 杨成樾, 申华军, 刘新宇. 一种应用于总磷检测的倏逝波光传感测试系统及方法. CN: CN102297843A, 2011-12-28.
[327] 刘焕明, 周静涛, 李博, 刘新宇. 金铁合金互联线及其制作方法. CN: CN102299138A, 2011-12-28.
[328] 武德起, 贾锐, 陈晨, 李昊峰, 吴大卫, 刘新宇, 叶甜春. 一种制备叉指背接触双面太阳能电池的方法. CN: CN102244136A, 2011-11-16.
[329] 刘新宇, 蒲颜, 庞磊, 陈晓娟, 武伟超. 与MMIC工艺结合的50欧姆TaN薄膜电阻的制作方法. CN: CN102237165A, 2011-11-09.
[330] 彭铭曾, 郑英奎, 刘果果, 刘新宇. 一种检测氮化镓基场效应晶体管表面钝化效果的方法. CN: CN102237288A, 2011-11-09.
[331] 庞磊, 陈晓娟, 罗卫军, 魏珂, 刘新宇. 一种芯片背面金属起镀层结构及其制备方法. CN: CN102237339A, 2011-11-09.
[332] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种对蓝宝石晶片进行减薄的方法. CN: CN102214555A, 2011-10-12.
[333] 汪宁, 陈晓娟, 罗卫军, 庞磊, 刘新宇. 一种对碳化硅晶片进行减薄的方法. CN: CN102214565A, 2011-10-12.
[334] 刘洪刚, 常虎东, 刘新宇, 吴德馨. 高迁移率Ⅲ-Ⅴ族半导体MOS界面结构. CN: CN102194859A, 2011-09-21.
[335] 罗卫军, 陈晓娟, 刘新宇. 具有适用于高频大功率器件的稳定网络的匹配电路. CN: CN102118133A, 2011-07-06.
[336] 刘新宇, 周静涛, 申华军, 张轩雄, 刘洪刚, 吴德馨. 硅基光电异质集成方法及硅基光电异质集成芯片. CN: CN102117820A, 2011-07-06.
[337] 陈晓娟, 张辉, 李滨, 刘新宇, 阎跃鹏. 适用于波导的功率合成及分配的波导结构. CN: CN102117947A, 2011-07-06.
[338] 贾锐, 岳会会, 陈晨, 刘新宇, 叶甜春. 一种制备硅基纳米柱阵列的方法. CN: CN102115028A, 2011-07-06.
[339] 蒲颜, 王亮, 袁婷婷, 欧阳思华, 刘新宇. 多偏置下场效应晶体管栅源电容的测量方法. CN: CN102109570A, 2011-06-29.
[340] 刘洪刚, 刘新宇, 吴德馨. 半导体纳米结构和制造方法及其应用. CN: CN102107852A, 2011-06-29.
[341] 刘新宇, 程伟, 金智, 王显泰. 一种利用电阻进行耦合和匹配的单片低噪声放大器. CN: CN102111111A, 2011-06-29.
[342] 赵妙, 王鑫华, 刘新宇, 欧阳思华, 黄俊. 一种测量AlGaN/GaN HEMT器件凹栅槽深度的方法. CN: CN102087092A, 2011-06-08.
[343] 王亮, 蒲颜, 袁婷婷, 欧阳思华, 庞磊, 刘果果, 魏珂, 刘新宇. 一种多偏置下场效应晶体管栅漏电容的测试方法. CN: CN102074489A, 2011-05-25.
[344] 赵妙, 王鑫华, 刘新宇, 魏珂, 郑英奎. 已减薄或划片的氮化镓基场效应管的退火处理方法. CN: CN101661885A, 2010-03-03.
[345] 蒲颜, 罗卫军, 陈晓娟, 魏珂, 刘新宇. 一种微波单片集成电路中的金属布线层结构及其制备方法. CN: CN101661921A, 2010-03-03.
[346] 王鑫华, 赵妙, 刘新宇. 一种GaN HEMT器件的肖特基参数提取方法. CN: CN101655883A, 2010-02-24.
[347] 白云, 麻芃, 刘键, 朱杰, 饶志鹏, 刘新宇. 具有自增益的日盲型AlGaN紫外探测器及其制备方法. CN: CN101640227A, 2010-02-03.
[348] 白云, 刘键, 麻芃, 朱杰, 饶志鹏, 刘新宇, 郭丽伟. 一种基于AlGaN的全波段紫外探测器及其制备方法. CN: CN101645471A, 2010-02-10.
[349] 陈高鹏, 吴旦昱, 陈建武, 金智, 武锦, 刘新宇. 一种带波形修正ROM的DDS电路结构. CN: CN102006067A, 2011-04-06.
[350] 刘新宇, 陈高鹏, 吴旦昱, 金智, 武锦. 一种GaAs HBT超高速时钟分配电路. CN: CN102006049A, 2011-04-06.
[351] 陈高鹏, 吴旦昱, 金智, 武锦, 刘新宇. 一种ROM-less DDS电路结构. CN: CN102006066A, 2011-04-06.
[352] 王鑫华, 赵妙, 刘新宇. 一种提高GaN HEMT退火成功率的方法. CN: CN101661877A, 2010-03-03.
[353] 刘新宇, 陈高鹏, 吴旦昱, 金智, 武锦. 一种GaAs HBT双边沿触发流水线累加器结构. CN: CN101996064A, 2011-03-30.
[354] 陈高鹏, 吴旦昱, 苏永波, 金智, 刘新宇. InP DHBT W波段功率放大器单片集成电路的稳定网络结构. CN: CN101989838A, 2011-03-23.
[355] 陈高鹏, 吴旦昱, 金智, 武锦, 刘新宇. GaAs HBT高增益宽带线性跨导单元电路. CN: CN101989837A, 2011-03-23.
[356] 吴旦昱, 陈晓娟, 刘新宇, 李滨. 波导型耦合检波器. CN: CN101614768A, 2009-12-30.
[357] 赵妙, 王鑫华, 刘新宇, 李诚瞻, 魏珂, 郑英奎. 提高氮化镓基场效应晶体管肖特基势垒的方法. CN: CN101707184A, 2010-05-12.
[358] 张慧慧, 申华军, 周静涛, 刘新宇. 基于自准直效应的光子晶体偏振分束器结构. CN: CN101923226A, 2010-12-22.
[359] 周静涛, 申华军, 张慧慧, 刘新宇. 一种采用多模干涉耦合的光延时器. CN: CN101881859A, 2010-11-10.
[360] 贾锐, 朱晨昕, 陈晨, 李维龙, 李昊峰, 张培文, 刘明, 刘新宇, 叶甜春. 一种制作晶硅高效太阳能电池的方法. CN: CN101882643A, 2010-11-10.
[361] 贾锐, 李维龙, 朱晨昕, 陈晨, 张培文, 刘明, 刘新宇, 叶甜春. 基于硅量子点超晶格结构的晶硅太阳能电池的制备方法. CN: CN101840955A, 2010-09-22.
[362] 贾锐, 朱晨昕, 陈晨, 李维龙, 张培文, 刘明, 刘新宇, 叶甜春. 一种制备表面混合调制晶硅太阳能电池的方法. CN: CN101840953A, 2010-09-22.
[363] 吴旦昱, 陈晓娟, 刘新宇, 李滨. 基于波导的功率合成器. CN: CN101826648A, 2010-09-08.
[364] 王鑫华, 赵妙, 刘新宇. 一种对肖特基势垒高度进行镜像力补偿修正的方法. CN: CN101814100A, 2010-08-25.
[365] 程伟, 金智, 苏永波, 刘新宇. 利用苯并环丁烯制作介质桥的方法. CN: CN101800189A, 2010-08-11.
[366] 程伟, 金智, 苏永波, 刘新宇. 利用聚酰亚胺制作介质桥的方法. CN: CN101800191A, 2010-08-11.
[367] 贾锐, 李维龙, 陈晨, 朱晨昕, 李昊峰, 刘明, 刘新宇. 低温探针台防热辐射铝箔屏及其制造方法. CN: CN101436438A, 2009-05-20.
[368] 申华军, 周静涛, 刘新宇, 吴德馨. 一种硅纳米光波导与光纤的耦合封装方法. CN: CN101533128A, 2009-09-16.
[369] 陈中子, 陈晓娟, 袁婷婷, 刘新宇, 阎跃鹏. 一种微带－波导转换探针与阻抗匹配的方法. CN: CN101442148A, 2009-05-27.
[370] 陈晨, 贾锐, 李维龙, 姚嘉宁, 朱晨昕, 李昊峰, 刘明, 刘新宇. 垂直可变磁场装置. CN: CN101446627A, 2009-06-03.
[371] 李诚瞻, 魏珂, 郑英奎, 刘果果, 黄俊, 刘新宇. 氮化镓基场效应管及其制备方法. CN: CN101442071A, 2009-05-27.
[372] 陈晓娟, 刘新宇, 阎跃鹏, 陈中子, 袁婷婷, 陈高鹏. 应用于微带－波导转换的阶梯型脊波导结构. CN: CN101677145A, 2010-03-24.
[373] 陈晓娟, 刘新宇, 阎跃鹏, 陈中子, 袁婷婷, 陈高鹏. 一种针对波导－探针－波导形式的双层腔体结构. CN: CN101667674A, 2010-03-10.
[374] 陈晓娟, 刘新宇, 阎跃鹏, 陈中子, 袁婷婷, 陈高鹏. 一种适用于毫米波功率合成及分配的波导结构. CN: CN101667675A, 2010-03-10.
[375] 袁婷婷, 陈晓娟, 刘新宇, 陈中子, 陈高鹏, 阎跃鹏. 对Ku波段微带型开关电路印制电路板进行背金的方法. CN: CN101662885A, 2010-03-03.
[376] 陈高鹏, 陈晓娟, 刘新宇, 李滨. 针对Ku波段内匹配场效应晶体管的偏置电路. CN: CN101662263A, 2010-03-03.
[377] 金智, 刘新宇. 一种用于监控介质平坦化过程的方法. CN: CN101562135B, 2010-09-22.
[378] 金智, 刘新宇. HBT工艺中介质平面平坦化的方法. CN: CN101562136A, 2009-10-21.
[379] 金智, 刘新宇. 一种用倒梯形剖面的光刻胶制作介质边缘缓坡的方法. CN: CN101561629A, 2009-10-21.
[380] 金智, 刘新宇. InGaAs/InP HBT中亚微米发射极的湿法腐蚀方法. CN: CN101562132A, 2009-10-21.
[381] 武锦, 欧阳思华, 刘新宇, 阎跃鹏. 基于方波导的2×2单面双鳍线阵的制作方法. CN: CN101556623B, 2010-07-21.
[382] 金智, 刘新宇. npn型InGaAs/InP DHBT外延层结构. CN: CN101552284A, 2009-10-07.
[383] 金智, 刘新宇. 在HBT工艺中同时制作基极和集电极接线柱的方法. CN: CN101552199A, 2009-10-07.
[384] 袁婷婷, 陈晓娟, 陈中子, 李滨, 刘新宇. 多个子腔体的微带型微波开关. CN: CN101471467B, 2012-11-21.
[385] 李诚瞻, 魏珂, 郑英奎, 刘果果, 和致经, 刘新宇, 刘键. 一种制作氮化镓基场效应晶体管的方法. CN: CN101459080A, 2009-06-17.
[386] 于进勇, 刘新宇, 金智, 程伟, 夏洋. 一种制作异质结双极型晶体管的方法. CN: CN101447428A, 2009-06-03.
[387] 于进勇, 刘新宇, 金智, 程伟, 夏洋. 一种引出亚微米HBT发射极/HEMT栅的方法. CN: CN100580898C, 2010-01-13.
[388] 李诚瞻, 魏珂, 刘新宇, 刘键, 刘果果, 郑英奎, 王冬冬, 黄俊, 和致经. 一种提高氮化镓基场效应晶体管性能的方法. CN: CN101414562A, 2009-04-22.
[389] 李诚瞻, 黄俊, 郑英奎, 刘果果, 和致经, 魏珂, 刘新宇. 一种电子束对准标记的制作方法. CN: CN101383268B, 2010-09-15.
[390] 于进勇, 金智, 程伟, 刘新宇, 夏洋. 亚微米HBT发射极/HEMT栅空气桥引出的方法. CN: CN101330009A, 2008-12-24.
[391] 于进勇, 金智, 程伟, 刘新宇, 夏洋. 一种制作T型HBT发射极/HEMT栅的方法. CN: CN101330010A, 2008-12-24.
[392] 刘果果, 刘新宇, 郑英奎. 凹栅槽的AlGaN/GaN HEMT多层场板器件及其制作方法. CN: CN101276837A, 2008-10-01.
[393] 于进勇, 金智, 程伟, 刘新宇, 夏洋. 一种利用光敏胶层制作空气桥的方法. CN: CN101276778A, 2008-10-01.
[394] 刘果果, 刘新宇, 郑英奎, 魏珂. 一种场效应晶体管多层场板器件及其制作方法. CN: CN101232045A, 2008-07-30.
[395] 刘新宇, 刘果果, 郑英奎, 李诚瞻, 刘键. 一种氮化镓基场效应管及其制作方法. CN: CN101150144A, 2008-03-26.
[396] 刘果果, 和致经, 魏珂, 刘新宇, 郑英奎. 一种电子束对准标记的制作方法及其应用. CN: CN101149563A, 2008-03-26.
[397] 于进勇, 刘新宇, 夏洋. 磷化铟异质结双极型晶体管自对准发射极的制作方法. 中国: CN101093803, 2007-12-26.
[398] 苏树兵, 刘训春, 于进勇, 刘新宇, 王润梅, 郑英奎, 魏珂, 汪宁. 异质结双极晶体管T型发射极金属图形制作方法的改进. CN: CN101017781A, 2007-08-15.
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[400] 郑英奎, 魏珂, 和致经, 刘新宇. 应用于基于氮化镓材料的包封退火方法. CN: CN1801465A, 2006-07-12.
[401] 陈晓娟, 和致经, 刘新宇, 刘键, 吴德馨. 提高金属－介质－金属结构电容性能的方法. CN: CN1787171A, 2006-06-14.
[402] 魏珂, 和致经, 刘新宇, 刘健, 吴德馨. 适用于氮化镓器件的铝/钛/铝/镍/金欧姆接触系统. CN: CN1734730A, 2006-02-15.
[403] 魏珂, 和致经, 刘新宇, 刘健, 吴德馨. 适用于氮化镓器件的铝/钛/铝/钛/铂/金的欧姆接触系统. CN: CN1734728A, 2006-02-15.
[404] 魏珂, 和致经, 刘新宇, 刘健, 吴德馨. 适用于氮化镓器件的铝/钛/铝/钛/金欧姆接触系统. CN: CN1734732A, 2006-02-15.
[405] 魏珂, 和致经, 刘健, 刘新宇, 吴德馨. 适用于氮化镓器件的钛/铝/钛/铂/金欧姆接触系统. CN: CN1734731A, 2006-02-15.
[406] 魏珂, 和致经, 刘新宇, 刘健, 吴德馨. 适用于氮化镓器件的铝/钛/铝/铂/金欧姆接触系统. CN: CN100367475C, 2008-02-06.
[407] 刘新宇, 孙海峰, 和致经, 邵刚. 电镀起镀层的制作方法. CN: CN1670262A, 2005-09-21.
[408] 邵刚, 刘新宇, 和致经, 刘键, 吴德馨. 复合胶电镀制作空气桥的方法. CN: CN1641837A, 2005-07-20.

   

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[435] 葛霁, 金智, 程伟, 苏永波, 刘新宇. 改进了渡越时间方程的InP DHBT模型. 半导体技术[J]. 2008, 第 5 作者12-14, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013188.
[436] JINZhi, SUYongBo, CHENGWei, LIUXinYu, XUAnHuai, QIMing. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253GHz. Chinese Physics Letters[J]. 2008, 第 4 作者25(8): 3075-3078, https://cpl.iphy.ac.cn/Y2008/V25/I8/3075.
[437] Wu Jin, Ouyang SiHua, Yan YuePeng, Liu XinYu. Analysis and design of finline arrays for spatial power combiner. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2008, 第 4 作者27(2): 157-160, http://www.irgrid.ac.cn/handle/1471x/1090292.
[438] JINZhi, SUYongBo, CHENGWei, LIUXinYu, XUAnHuai, QIMing. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage. Chinese Physics Letters[J]. 2008, 第 4 作者25(7): 2683-2685, https://cpl.iphy.ac.cn/Y2008/V25/I7/2683.
[439] 欧阳思华, 武锦, 李艳奎, 刘新宇. 基于Agilent VEE实现混频器的自动化测试. 电子测量技术[J]. 2008, 第 4 作者31(11): 108-111, http://lib.cqvip.com/Qikan/Article/Detail?id=28792364.
[440] 庞磊, 李诚瞻, 王冬冬, 黄俊, 曾轩, 刘新宇, 刘键, 郑英奎, 和致经. 碳致深能级引起的AlGaN/GaN HEMT电流崩塌现象. 半导体学报[J]. 2008, 第 6 作者29(6): 1066-1069, http://lib.cqvip.com/Qikan/Article/Detail?id=27516628.
[441] 王冬冬, 刘果果, 刘丹, 李诚瞻, 刘新宇. X波段AlGaN/GaN HEMTs Γ栅场板结构研究. 半导体技术[J]. 2008, 第 5 作者33(10): 850-854, http://lib.cqvip.com/Qikan/Article/Detail?id=28357186.
[442] 欧阳思华, 武锦, 李艳奎, 刘新宇. 基于Agilent VEE的HEMT器件在片虚拟仪器测试系统. 电子测量技术[J]. 2008, 第 4 作者31(6): 111-113, http://lib.cqvip.com/Qikan/Article/Detail?id=27601625.
[443] 李诚瞻, 魏珂, 郑英奎, 刘果果, 庞磊, 刘新宇. 检验GaN基外延材料质量的简易方法. 半导体技术[J]. 2008, 第 6 作者109-111, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013215.
[444] 金智, 程伟, 刘新宇, 徐安怀, 齐鸣. 截止频率为238GHz的亚微米InGaAs/InP异质结双极晶体管. 半导体学报[J]. 2008, 第 3 作者29(10): 1898-1901, http://lib.cqvip.com/Qikan/Article/Detail?id=28463806.
[445] 金智, 刘新宇. InGaAs／InP DHBT的基极-集电极设计. 中国科学：E辑[J]. 2008, 第 2 作者38(9): 1521-1528, http://lib.cqvip.com/Qikan/Article/Detail?id=29047283.
[446] 陈中子, 陈晓娟, 姚小江, 袁婷婷, 刘新宇, 李滨. 4～12GHz三级宽带功率放大器. 半导体技术[J]. 2008, 第 5 作者35-37, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013194.
[447] 陈高鹏, 吴旦昱, 陈晓娟, 刘新宇, 李滨. Ku波段脉冲功率放大器稳定性和效率研究. 半导体技术[J]. 2008, 第 4 作者28-31, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013192.
[448] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage. 中国物理快报：英文版[J]. 2008, 第 4 作者25(7): 2683-2685, http://lib.cqvip.com/Qikan/Article/Detail?id=27686211.
[449] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz. 中国物理快报：英文版[J]. 2008, 第 4 作者25(8): 3075-3078, http://lib.cqvip.com/Qikan/Article/Detail?id=27934377.
[450] 金智, 刘新宇. InGaAs／InP DHBT的基极-集电极设计. 中国科学：E辑[J]. 2008, 第 2 作者38(9): 1521-1528, http://lib.cqvip.com/Qikan/Article/Detail?id=29047283.
[451] 葛霁, 金智, 刘新宇, 程伟, 王显泰, 陈高鹏, 吴德馨. 考虑载流子速度和耗尽层宽度随电压变化的VBIC模型. 半导体学报[J]. 2008, 第 3 作者29(11): 2270-2274, http://lib.cqvip.com/Qikan/Article/Detail?id=28718909.
[452] 袁婷婷, 陈晓娟, 陈中子, 陈高鹏, 李滨, 刘新宇. Ku波段开关固态功放模块的研制. 半导体技术[J]. 2008, 第 6 作者32-34, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013193.
[453] 袁婷婷, 陈晓娟, 陈中子, 姚小江, 李滨, 刘新宇. 隔离度大于95dB的Ku波段微带型开关. 半导体学报[J]. 2008, 第 6 作者29(10): 2034-2037, http://lib.cqvip.com/Qikan/Article/Detail?id=28463831.
[454] 李诚瞻, 刘丹, 郑英奎, 刘新宇, 刘键, 魏珂, 和致经. 钝化前表面预处理对AlGaN/GaN HEMTs性能的影响. 半导体学报[J]. 2008, 第 4 作者29(2): 329-333, http://lib.cqvip.com/Qikan/Article/Detail?id=26630220.
[455] 吴德馨. 具有场板结构的AlGaN／GaN HEMT的直流特性. 半导体学报[J]. 2008, 29(3): 5-5, http://lib.cqvip.com/Qikan/Article/Detail?id=2.6739419E7.
[456] 曾轩, 陈晓娟, 刘果果, 袁婷婷, 陈中子, 张辉, 王亮, 李诚瞻, 庞磊, 刘新宇, 刘键. 基于AlGaN/GaN HEMT的X波段内匹配功率合成放大器的设计. 电子器件[J]. 2008, 第 10 作者31(6): 1794-1796, http://lib.cqvip.com/Qikan/Article/Detail?id=29012578.
[457] 刘果果, 郑英奎, 魏珂, 李诚瞻, 刘新宇, 和致经. 8W AlGaN/GaN HEMT功率器件的研制. 半导体学报[J]. 2008, 第 5 作者29(7): 1354-1356, http://lib.cqvip.com/Qikan/Article/Detail?id=27726567.
[458] 刘果果, 黄俊, 魏珂, 刘新宇, 和致经. 凹栅槽AlGaN／GaN HEMTs器件退火处理效应. 半导体学报[J]. 2008, 第 4 作者29(12): 2326-2330, http://lib.cqvip.com/Qikan/Article/Detail?id=28875587.
[459] 刘果果, 魏珂, 郑英奎, 刘新宇, 和致经. AlGaN/GaN HEMTs器件布局对器件性能影响分析. 电子器件[J]. 2008, 第 4 作者31(6): 1769-1771, http://lib.cqvip.com/Qikan/Article/Detail?id=29012571.
[460] 陈高鹏, 陈晓娟, 刘新宇, 李滨. Ku波段30W脉冲微波功率放大器模块. 半导体学报[J]. 2008, 第 3 作者29(11): 2281-2285, http://lib.cqvip.com/Qikan/Article/Detail?id=28718911.
[461] 曾轩, 陈晓娟, 刘果果, 袁婷婷, 陈中子, 张辉, 王亮, 李诚瞻, 庞磊, 刘新宇, 刘键. 8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计. 半导体学报[J]. 2008, 第 10 作者29(8): 1445-1448, http://lib.cqvip.com/Qikan/Article/Detail?id=28125466.
[462] 陈延湖, 申华军, 王显泰, 陈高鹏, 刘新宇, 袁东风, 王祖强. InGaP/GaAs HBT X波段混合集成功率合成放大器的研制. 半导体学报[J]. 2008, 第 5 作者29(11): 2098-2100, http://lib.cqvip.com/Qikan/Article/Detail?id=28718878.
[463] Wu Jin, Ouyang SiHua, Yan YuePeng, Liu XinYu. Analysis and design of finline arrays for spatial power combiner. JOURNAL OF INFRARED AND MILLIMETER WAVES[J]. 2008, 第 4 作者27(2): 157-160, http://www.irgrid.ac.cn/handle/1471x/1090292.
[464] 欧阳思华, 武锦, 李艳奎, 刘新宇. 基于虚拟仪器的HBT器件自动测试系统. 半导体技术[J]. 2008, 第 4 作者8-11, http://lib.cqvip.com/Qikan/Article/Detail?id=1004013187.
[465] 金智, 苏永波, 程伟, 刘新宇, 徐安怀, 齐鸣. High-Breakdown-Voltage Submicron InGaAs/InP Double Heterojunction Bipolar Transistor with ft=170 GHz and fmax=253 GHz. 中国物理快报：英文版[J]. 2008, 第 4 作者25(7): 2686-2689, http://lib.cqvip.com/Qikan/Article/Detail?id=27686212.
[466] 葛霁, 金智, 刘新宇, 程伟, 王显泰, 陈高鹏, 吴德馨. 一种改进了碰撞电离的超高速InP基SHBT SDD模型. 半导体学报[J]. 2008, 第 3 作者29(9): 1799-1803, http://lib.cqvip.com/Qikan/Article/Detail?id=28238579.
[467] 姚小江, 蒲颜, 刘新宇, 吴伟超. 应用于AlGaN/GaN HEMTs MMIC薄膜电阻的特性与可靠性. 半导体学报[J]. 2008, 第 3 作者29(7): 1246-1248, http://lib.cqvip.com/Qikan/Article/Detail?id=27726522.
[468] 程伟, 金智, 刘新宇, 于进勇, 徐安怀, 齐鸣. f=210GHz的超高速InP／InGaAs单异质结晶体管. 半导体学报[J]. 2008, 第 3 作者29(3): 414-417, http://lib.cqvip.com/Qikan/Article/Detail?id=26739393.
[469] 申华军, 葛霁, 杨威, 陈延湖, 王显泰, 刘新宇, 吴德馨. 发射极空气桥InGaP／GaAsHBT的DC和RF特性分析. 电子器件[J]. 2007, 第 6 作者30(1): 1-4, http://lib.cqvip.com/Qikan/Article/Detail?id=23941316.
[470] 李诚瞻, 庞磊, 刘新宇, 黄俊, 刘键, 郑英奎, 和致经. 等离子体刻蚀凹栅槽影响AlGaN／GaNHEMT栅电流的机理. 半导体学报[J]. 2007, 第 3 作者28(11): 1777-1781, http://lib.cqvip.com/Qikan/Article/Detail?id=25838036.
[471] 姚小江, 李宾, 陈延湖, 陈小娟, 魏珂, 李诚瞻, 罗卫军, 王晓亮, 刘丹, 刘果果, 刘新宇. 基于AlGaN／GaN HEMT的C波段混合集成功率合成放大器的设计. 半导体学报[J]. 2007, 第 11 作者28(4): 514-517, http://lib.cqvip.com/Qikan/Article/Detail?id=24217836.
[472] 陈延湖, 申华军, 王显泰, 葛荠, 李滨, 刘新宇, 吴德馨. 基于InGaP／GaAs HBT的X波段MMIC功率放大器研制. 半导体学报[J]. 2007, 第 6 作者28(5): 759-762, http://lib.cqvip.com/Qikan/Article/Detail?id=24422404.
[473] 李诚瞻, 刘键, 刘新宇, 刘果果, 庞磊, 陈晓娟, 刘丹, 姚小江, 和致经. 掺杂AlGaN/GaN HEMT电流崩塌效应研究. 多媒体世界[J]. 2007, 第 3 作者http://lib.cqvip.com/Qikan/Article/Detail?id=1000048590.
[474] 程伟, 金智, 于进勇, 刘新宇. 含InGaAsP的InP DHBT复合式集电区结构设计. 半导体学报[J]. 2007, 第 4 作者28(6): 943-946, http://lib.cqvip.com/Qikan/Article/Detail?id=24586039.
[475] 李诚瞻, 刘键, 刘新宇, 刘果果, 庞磊, 陈晓娟, 刘丹, 姚小江, 和致经. 掺杂AlGaN/GaN HEMT电流崩塌效应研究. 电子器件[J]. 2007, 第 3 作者1532-1534,1538, http://lib.cqvip.com/Qikan/Article/Detail?id=1000048263.
[476] 姚小江, 李宾, 陈延湖, 陈小娟, 魏珂, 李诚瞻, 刘丹, 刘果果, 刘新宇, 王晓亮, 罗卫军. 基于AlGaN/GaN HEMT的C波段功率放大器混合集成电路的设计. 电子器件[J]. 2007, 第 9 作者30(4): 1137-1139, http://lib.cqvip.com/Qikan/Article/Detail?id=25100274.
[477] 周忠堂, 郭丽伟, 邢志刚, 丁国建, 谭长林, 吕力, 刘建, 刘新宇, 贾海强, 陈弘, 周均铭. AlGaN/AlN/GaN结构中二维电子气的输运特性. 物理学报[J]. 2007, 第 8 作者56(10): 6013-6018, https://wulixb.iphy.ac.cn/cn/article/doi/10.7498/aps.56.6013.
[478] 陈延湖, 申华军, 王显泰, 葛霁, 刘新宇, 吴德馨. HBT自热效应对功率放大器偏置电路的影响及补偿. 电子器件[J]. 2007, 第 5 作者30(3): 829-832, http://lib.cqvip.com/Qikan/Article/Detail?id=24728184.
[479] 陈晓娟, 李诚瞻, 刘新宇, 罗卫军. 基于国产外延材料的SiC基AlGaN/GaN HEMT器件研制. 电子器件[J]. 2007, 第 3 作者30(3): 738-740, http://lib.cqvip.com/Qikan/Article/Detail?id=24728160.
[480] Yao Xiaojiang, Li Bin, Chen Xiaojuan, Wei Ke, Li Chengzhan, Luo Weijun, Liu Dan, WANG Xiaoliang, Liu Xinyu, Liu Guoguo, Chen Yanhu. AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band. 半导体学报[J]. 2007, 第 9 作者28(4): 514-517, http://ir.semi.ac.cn/handle/172111/16317.
[481] 刘丹, 陈晓娟, 罗卫军, 李诚瞻, 刘新宇, 和致经. AlGaN/GaN HEMT器件小信号等效电路参数值的提取. 半导体学报[J]. 2007, 第 5 作者411-413, http://lib.cqvip.com/Qikan/Article/Detail?id=1001096796.
[482] 于进勇, 刘新宇, 苏树兵, 王润梅, 徐安怀, 齐鸣. 基极微空气桥和发射极空气桥的InP／InGaAs HBT. 半导体学报[J]. 2007, 第 2 作者28(2): 154-158, http://lib.cqvip.com/Qikan/Article/Detail?id=23924791.
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[484] 孙浩, 齐鸣鸥, 徐安怀, 艾立, 苏树兵, 刘新宇, 刘训春, 钱鹤. 带有复合掺杂层集电区的InP／InGaAs／InP DHBT直流特性分析. 半导体学报[J]. 2006, 第 6 作者27(8): 1431-1435, http://lib.cqvip.com/Qikan/Article/Detail?id=22607270.
[485] 苏树兵, 刘新宇, 徐安怀, 于进勇, 齐鸣, 刘训春, 王润梅. MBE生长的InP DHBT的性能. 半导体学报[J]. 2006, 第 2 作者27(5): 792-795, http://lib.cqvip.com/Qikan/Article/Detail?id=21935598.
[486] 苏树兵, 刘训春, 刘新宇, 于进勇, 王润梅, 徐安怀, 齐鸣. 采用新的T型发射极技术的自对准InP／GaInAs单异质结双极晶体管的性能. 半导体学报[J]. 2006, 第 3 作者27(3): 434-437, http://lib.cqvip.com/Qikan/Article/Detail?id=21440051.
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[488] 罗卫军, 陈晓娟, 梁晓新, 马晓琳, 刘新宇, 王晓亮. 微波功率器件的扇形线测试电路. 半导体学报[J]. 2006, 第 5 作者27(9): 1557-1561, http://lib.cqvip.com/Qikan/Article/Detail?id=22775324.
[489] 李诚瞻, 刘键, 刘新宇, 薛丽君, 陈晓娟, 和致经. AlN插入层与AlGaN/GaN HEMT电流崩塌效应的关系. 半导体学报[J]. 2006, 第 3 作者27(6): 1055-1058, http://lib.cqvip.com/Qikan/Article/Detail?id=22152554.
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[491] Liu Xinyu, Luo Weijun, Chen Xiaojuan, Liang Xiaoxin, Ma Xiaolin, Wang Xiaoliang. A Radial Stub Test Circuit for Microwave Power Devices. 半导体学报[J]. 2006, 第 1 作者27(9): 1557-1561, http://ir.semi.ac.cn/handle/172111/16599.
[492] 罗卫军, 陈晓娟, 李成瞻, 刘新宇, 和致经, 魏珂, 梁晓新, 王晓亮. 高性能1mm SiC基AlGaN/GaN功率HEMT研制. 半导体学报[J]. 2006, 第 4 作者27(11): 1981-1983, http://ir.semi.ac.cn/handle/172111/16477.
[493] Yu Jinyong, Yan Beiping, Su Shubing, liu Xunchun, Qi Ming, 刘训春, 王润梅, 徐安怀, 刘新宇. 162GHz自对准InP／InGaAs异质结双极型晶体管. 半导体学报[J]. 2006, 第 9 作者27(10): 1732-1736, http://www.irgrid.ac.cn/handle/1471x/1089904.
[494] 申华军, 陈延湖, 严北平, 葛霁, 王显泰, 刘新宇, 吴德馨. C波段3．5W／mm，PAE〉40％的InGaP／GaAs HBT功率管. 半导体学报[J]. 2006, 第 6 作者27(9): 1612-1615, http://lib.cqvip.com/Qikan/Article/Detail?id=22775336.
[495] 郑英奎, 刘果果, 和致经, 刘新宇, 吴德馨. fT为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件. 半导体学报[J]. 2006, 第 4 作者27(6): 963-965, http://lib.cqvip.com/Qikan/Article/Detail?id=22152535.
[496] 申华军, 陈延湖, 严北平, 杨威, 葛霁, 王显泰, 刘新宇, 吴德馨. GaAsMMIC用无源元件的模型. 半导体学报[J]. 2006, 第 7 作者27(10): 1872-1879, http://www.irgrid.ac.cn/handle/1471x/1089905.
[497] 刘丹, 陈晓娟, 刘果果, 和致经, 刘新宇, 吴德馨. 种新的AlGaN/GaN HEMT半经验直流特性模型. 半导体学报[J]. 2006, 第 5 作者27(11): 1984-1988, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=2615853&detailType=1.
[498] 樊宇伟, 申华军, 葛霁, 刘新宇, 和致经, 吴德馨. 4GHz 300 mW InGaP／GaAs HBT功率管研制. 电子器件[J]. 2006, 第 4 作者29(1): 12-14, http://lib.cqvip.com/Qikan/Article/Detail?id=21429596.
[499] 陈晓娟, 刘新宇, 邵刚, 刘键, 和致经, 汪锁发, 吴德馨. 基于FC技术的AlGaN／GaN HEMT. 半导体学报[J]. 2005, 第 2 作者26(5): 990-993, http://lib.cqvip.com/Qikan/Article/Detail?id=15727206.
[500] 陈晓娟, 刘新宇, 和致经, 刘建, 吴德馨. C波段0．75mm AIGaN／GaN功率器件. 半导体学报[J]. 2005, 第 2 作者26(9): 1804-1807, http://lib.cqvip.com/Qikan/Article/Detail?id=20260631.
[501] WANG Xiaoliang, WANG Cuimei, HU Guoxin, WANG Junxi, RAN Junxue, FANG Cebao, LI Jianping, ZENG Yiping, LI Jinmin, LIU Xinyu, LIU Jian, QIAN He. Growth and characterization of 0.8-μm gate length AlGaN/GaN HEMTs on sapphire substrates. 中国科学：F辑英文版[J]. 2005, 第 10 作者48(6): 808-814, http://lib.cqvip.com/Qikan/Article/Detail?id=20740102.
[502] 李树翀, 韩振宇, 刘新宇, 吴德馨. RF模块中微带线的设计及实现. 半导体技术[J]. 2005, 第 3 作者30(2): 51-53, http://lib.cqvip.com/Qikan/Article/Detail?id=11685914.
[503] 郑丽萍, 袁志鹏, 樊宇伟, 孙海锋, 狄浩成, 王素琴, 刘新宇, 吴德馨. 高功率附加效率的InGaP／GaAs功率HBT. 半导体学报[J]. 2005, 第 7 作者26(1): 92-95, http://lib.cqvip.com/Qikan/Article/Detail?id=11645417.
[504] 王晓亮, 刘新宇, 胡国新, 王军喜, 马志勇, 王翠梅, 李建平, 冉军学, 郑英奎, 钱鹤, 曾一平, 李晋闽. 输出功率密度为2．23W／mm的X波段AlGaN／GaN功率HEMT器件. 半导体学报[J]. 2005, 第 2 作者26(10): 1865-1870, http://lib.cqvip.com/Qikan/Article/Detail?id=20281943.
[505] 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮, 陈宏, 邵刚, 刘新宇. 高性能1mm AlGaN／GaN功率HEMTs研制. 半导体学报[J]. 2005, 第 9 作者26(1): 88-91, http://lib.cqvip.com/Qikan/Article/Detail?id=11645416.
[506] 王晓亮, 王翠梅, 胡国新, 王军喜, 刘新宇, 刘键, 冉军学, 钱鹤, 曾一平, 李晋闽. RF—MBE生长的高Al势垒层AlGaN／GaNHEMT结构. 半导体学报[J]. 2005, 第 5 作者26(6): 1116-1120, http://lib.cqvip.com/Qikan/Article/Detail?id=15823412.
[507] Wang Xiaoling, Wang Ciumei, Hu Guoxin, Wang Junxi, Liu Xinyu, Liu Jian, Ran Junxue, Qian He, Zeng Yiping, Li Jinmin. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content. 半导体学报[J]. 2005, 第 5 作者26(6): 1116-1120, http://ir.semi.ac.cn/handle/172111/16969.
[508] 陈晓娟, 刘新宇, 和致经, 刘键, 邵刚, 魏珂, 吴德馨, 王晓亮, 周钧铭, 陈宏. 采用PECVD方法制作SiO2绝缘层的AlGaN／GaN MOS-HFET器件. 电子器件[J]. 2005, 第 2 作者28(3): 479-481, http://lib.cqvip.com/Qikan/Article/Detail?id=20078460.
[509] 郑丽萍, 孙海锋, 狄浩成, 樊宇伟, 王素琴, 刘新宇, 吴德馨. 低偏置电压工作的自对准InGaP／GaAs功率异质结双极晶体管. 半导体学报[J]. 2004, 第 6 作者25(8): 908-912, http://lib.cqvip.com/Qikan/Article/Detail?id=10155551.
[510] 陈震, 郑英奎, 刘新宇, 和致经, 吴德馨. 双平面掺杂和单平面掺杂PHEMT器件的性能比较. 半导体学报[J]. 2004, 第 3 作者25(3): 247-251, http://lib.cqvip.com/Qikan/Article/Detail?id=9598595.
[511] 陈震, 魏柯, 王润梅, 刘新宇, 刘训春, 吴德馨. GaAs背面通孔刻蚀技术研究. 功能材料与器件学报[J]. 2004, 第 4 作者10(2): 255-258, http://lib.cqvip.com/Qikan/Article/Detail?id=10182412.
[512] 吴德馨. 双异质结双平面掺杂HEMT器件的电荷控制模型. 半导体学报[J]. 2004, 25(7): 3-4, http://lib.cqvip.com/Qikan/Article/Detail?id=1.0032137E7.
[513] 邵刚, 刘新宇, 和致经, 刘键, 魏珂, 魏珂, 吴德馨. 蓝宝石衬底AlGaN／GaN功率HEMTs研制. 电子器件[J]. 2004, 第 2 作者27(3): 381-384, http://lib.cqvip.com/Qikan/Article/Detail?id=10478037.
[514] 邵刚, 刘新宇, 刘键, 刘键. AlGaN／GaN共栅共源HEMTs器件. 电子器件[J]. 2004, 第 2 作者27(3): 385-388, http://lib.cqvip.com/Qikan/Article/Detail?id=10478038.
[515] 袁志鹏, 孙海锋, 刘新宇, 吴德馨. 基于InGaP／GaAs HBT的10Gbps跨阻放大器. 半导体学报[J]. 2004, 第 3 作者25(12): 1591-1594, http://lib.cqvip.com/Qikan/Article/Detail?id=12030911.
[516] 郑丽萍, 袁志鹏, 孙海锋, 和致经, 吴德馨, 刘新宇. 钝化边的制作及其对不同尺寸自对准InGaP／GaAs HBT性能的影响. 半导体学报[J]. 2004, 第 6 作者25(3): 312-315, http://lib.cqvip.com/Qikan/Article/Detail?id=9598603.
[517] 陈震, 和致经, 魏珂, 刘新宇, 吴德馨. 新型双异质结双平面掺杂功率PHEMT. 半导体学报[J]. 2004, 第 4 作者25(4): 454-457, http://lib.cqvip.com/Qikan/Article/Detail?id=9646062.
[518] 邵刚, 刘新宇, 和致经, 刘健, 吴德馨. 蓝宝石衬底AlGaN／GaN共栅共源微波HEMTs器件. 半导体学报[J]. 2004, 第 2 作者25(12): 1567-1572, http://lib.cqvip.com/Qikan/Article/Detail?id=12030906.
[519] 肖冬萍, 刘键, 魏珂, 和致经, 王润梅, 刘新宇, 吴德馨. 采用注入隔离制造的AlGaN／GaN HEMTs器件. 半导体学报[J]. 2004, 第 6 作者25(4): 458-461, http://lib.cqvip.com/Qikan/Article/Detail?id=9646063.
[520] 王晓亮, 胡国新, 王军喜, 刘新宇, 刘键, 刘宏新, 孙殿照, 曾一平, 钱鹤, 李晋闽, 孔梅影, 林兰英. RF—MBE生长的AlGaN／GaN高电子迁移率晶体管特性. 半导体学报[J]. 2004, 第 4 作者25(2): 121-125, http://lib.cqvip.com/Qikan/Article/Detail?id=9303789.
[521] 肖冬萍, 刘键, 魏珂, 和致经, 刘新宇, 吴德馨. 高跨导A1GaN／GaN HEMT器件. 半导体学报[J]. 2003, 第 5 作者24(9): 907-910, http://lib.cqvip.com/Qikan/Article/Detail?id=8194936.
[522] 郑丽萍, 严北平, 孙海锋, 刘新宇, 和致经, 吴德馨. 低开启电压的InGaP／GaAsSb／GaAs双异质结晶体管. 半导体学报[J]. 2003, 第 4 作者24(3): 318-321, http://lib.cqvip.com/Qikan/Article/Detail?id=7496786.
[523] 刘新宇, 孙海峰, 刘洪民, 陈焕章, 扈焕章, 海潮和, 和致经, 吴德馨. 全耗尽CMOS／SOI工艺. 半导体学报[J]. 2003, 第 1 作者24(1): 104-108, http://lib.cqvip.com/Qikan/Article/Detail?id=7321336.
[524] 刘运龙, 刘新宇. 氮化H2—02合成薄栅介质的击穿特性. 半导体学报[J]. 2002, 第 2 作者23(11): 1207-1210, http://lib.cqvip.com/Qikan/Article/Detail?id=7044117.
[525] 刘运龙, 刘新宇. 一种能够抑制部分耗尽SOI nMOSFET浮体效应的新型Schottkty体接触结构的模拟. 半导体学报[J]. 2002, 第 2 作者23(10): 1019-1023, http://lib.cqvip.com/Qikan/Article/Detail?id=6878745.
[526] 孙海锋, 刘新宇, 海潮和, 徐秋霞, 吴德馨. Ge预非晶化硅化物工艺的研究. 半导体学报[J]. 2002, 第 2 作者23(4): 445-448, http://lib.cqvip.com/Qikan/Article/Detail?id=6177933.
[527] 刘新宇, 孙海峰, 刘洪民, 韩郑生, 海潮和. CMOS／SOI4kb静态随机存储器. 功能材料与器件学报[J]. 2002, 第 1 作者8(2): 165-169, http://lib.cqvip.com/Qikan/Article/Detail?id=6497528.
[528] 吴德馨. CMOS／SOI 4Kb SRAM总剂量辐照实验. 半导体学报[J]. 2002, 23(2): 1-1, http://lib.cqvip.com/Qikan/Article/Detail?id=6042085.0.
[529] 刘运龙, 刘新宇, 韩郑生, 海潮和, 钱鹤. 氮化H_2-O_2合成薄栅介质的击穿特性. 半导体学报[J]. 2002, 第 2 作者23(11): 1207-1210, http://sciencechina.cn/gw.jsp?action=detail.jsp&internal_id=1007562&detailType=1.
[530] 刘运龙, 刘新宇. 采用非对称结构和注Ge的部分耗尽SOInMOSFET的浮体效应. 半导体学报[J]. 2002, 第 2 作者23(11): 1154-1157, http://lib.cqvip.com/Qikan/Article/Detail?id=7043972.
[531] 刘新宇, 孙海峰. 0．5um SOI CMOS器件和电路. 半导体学报[J]. 2001, 第 1 作者22(5): 660-663, http://lib.cqvip.com/Qikan/Article/Detail?id=5208264.

   

（ 1 ） 超高频、大功率化合物半导体器件与集成技术, 主持, 国家级, 2009-07--2013-07
（ 2 ） 5G高性能基站A/D、D/A转换器试验样片研发, 主持, 国家级, 2016-01--2017-12
（ 3 ） SI基GaN增强型电力电子器件研究, 主持, 国家级, 2016-01--2020-12

已指导学生

刘果果  博士研究生  080903-微电子学与固体电子学  

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