1、氮化镓基半导体新型发光器件及硅基集成；

2、超宽带隙半导体光电探测器及功率器件；

3、半导体光电探测器及焦平面阵列探测器；

   

0805Z2-半导体材料与器件

半导体光电探测器
半导体激光器及发光二极管
半导体新型光电子器件

2012-09--2016-10   香港大学电子工程系   博士
2009-09--2012-06   中国科学院半导体研究所   硕士
2004-09--2008-06   西安电子科技大学   本科

   

2021-01~现在, 中国科学院半导体研究所, 研究员
2019-02~2020-12,中国科学院半导体研究所, 副研究员
2016-11~2019-01,美国西北大学, 博士后

（1） High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices, Optics Express, 2020, 通讯作者
（2） Upside-down InAs/InAs1-xSbx type-II superlattice-based nBn mid-infrared photodetectors with an AlGaAsSb quaternary alloy barrier, Optics Express, 2020, 通讯作者
（3） High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier, Applied Physics Letters, 2020, 通讯作者
（4） High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition, Applied Physics Letters, 2019, 第 4 作者
（5） Very high external quantum efficiency and wall-plug efficiency 527 nm InGaN green LEDs by MOCVD, Optics Express, 2018, 第 7 作者
（6） Suppressing Spectral Crosstalk in Dual-Band Long-Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors, IEEE Journal of Quantum Electronics, 2018, 第 1 作者
（7） Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition, Applied Physics Letters, 2018, 第 3 作者
（8） Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD, Applied Physics Letters, 2018, 第 2 作者
（9） nBn extended short-wavelength infrared focal plane array, Optics Letters, 2018, 第 4 作者
（10） Thin-film Antimonide-based Photodetectors Integrated on Si, IEEE Journal of Quantum Electronics, 2018, 第 1 作者
（11） Optically pumped lasing with a Q-factor exceeding 6000 from wet-etched GaN micro-pyramids, Optics Letters, 2017, 第 2 作者
（12） Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots, Scientific Reports, 2016, 第 6 作者
（13） Influence of strain on emission from GaN-on-Si microdisks, IOP Journal of Physics D: Applied Physics, 2016, 第 1 作者
（14） GaN hemispherical micro-cavities, Applied Physics Letters, 2016, 第 1 作者
（15） Advances in III‐nitride semiconductor microdisk lasers, Physica Status Solidi (a), 2015, 第 1 作者
（16） Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures, Nano Energy, 2015, 第 3 作者
（17） Whispering-gallery mode lasing from optically free-standing InGaN microdisks, Optics Letters, 2014, 第 3 作者
（18） Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si, Applied Physics Letters, 2014, 第 1 作者
（19） Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids, Optics Express, 2013, 第 1 作者
（20） 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates, Applied Physics Letters, 2013, 第 8 作者
（21） Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes, Journal of Applied Physics, 2013, 第 1 作者
（22） Interface and transport properties of GaN/graphene junction in GaN-based LEDs, IOP Journal of Physics D: Applied Physics, 2012, 第 2 作者
（23） Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes, Applied Physics Letters, 2012, 第 2 作者
（24） Improving light output of vertical-stand-type InGaN light-emitting diodes grown on a free-standing GaN substrate with self-assembled conical arrays, IEEE Electronics Device Letters, 2012, 第 6 作者
（25） Annealed InGaN green light-emitting diodes with graphene transparent conductive electrodes, Journal of Applied Physics, 2012, 第 1 作者
（26） Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes, Optics Express, 2012, 第 1 作者
（27） Light Extraction Efficiency Improvement by Curved GaN Sidewalls in InGaN-Based Light-Emitting Diodes, IEEE Photonics Technology Letters, 2012, 第 1 作者
（28） Enhanced light emission of GaN-based diodes with a NiOx/graphene hybrid electrode, Nanoscale, 2012, 第 1 作者

   

（ 1 ） 高量子效率、柔性深紫外器件研发, 主持, 国家级, 2020-06--2025-05
（ 2 ） 中科院高层次人才计划, 主持, 部委级, 2021-01--2023-12
（ 3 ） Mini/MicroLED显示应用关键技术开发及产业化, 参与, 部委级, 2020-01--2021-12
（ 4 ） 硅基非制冷InAsSb红外探测器基础研究, 主持, 国家级, 2022-01--2025-12
（ 5 ） 面向聚变中子探测的高性能宽禁带半导体探测器研究, 参与, 国家级, 2022-01--2026-12