General
Xie, Xiuhua
Affiliations: State Key Laboratory of Luminescence and Applications,
Changchun Institute of Optics, Fine Mechanics and Physics,
Chinese Academy of Sciences,
E-mail: xiexh@ciomp.ac.cn
Address: No.3888 Dong Nanhu Road,Changchun,Jilin,China 130033
Research Areas
Wide-bandgap semiconductor,Molecular Beam Epitaxy,P-type doping,Optoelectronics
Education
- Sep. 2009 - Jul. 2014 Ph.D. in Condensed Matter Physics, University of
Chinese Academy of Sciences, the People’s Republic of
China, Thesis advisor: Prof. SHEN, DEZHEN - Sep. 2005 - Jul. 2009 B.Sc. in Physics, Northeast Normal University, the
People’s Republic of China
Experience
- Sep. 2018 - present Associate Professor, State Key Laboratory of
Luminescence and Applications, Changchun Institute of
Optics, Fine Mechanics and Physics, Chinese Academy
of Sciences, the People’s Republic of China - Jul. 2014 - Aug. 2018 Assistant Professor, State Key Laboratory of
Luminescence and Applications, Changchun Institute of
Optics, Fine Mechanics and Physics, Chinese Academy
of Sciences, the People’s Republic of China
Publications
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Shuangpeng Wang; Dezhen Shen, Controlled compensation via non-equilibrium electrons in ZnO, Scientific Reports, 2018.11.19, 8
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Reinventing a p-type doping process for stable ZnO light emitting devices, Journal of Physics D-Applied Physics, 2018.5.8, 51(22)
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core, Journal of Luminescence, 2018.2.14, 198: 178~182
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Eradicated unintentional incorporated donor-type impurities of ZnO, AIP Advances, 2018.3.20, 8(3)
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Dezhen Shen, Zn vacancies creation via (2 x 2) surface reconstruction, Journal of Physics D-Applied Physics, 2017.7.19, 50(32)
- Xiuhua Xie; Binghui Li; Zhenzhong Zhang; Shuangpeng Wang; Dezhen Shen, Conduction band discontinuity and carrier multiplication at the MgxZn1-xO/MgyZn1-yO interface, RSC Advances, 2016.3.30, 6(41): 34955~34958
- Xiuhua Xie; Zhenzhong Zhang(*); Binghui Li; Shuangpeng Wang; Dezhen Shen, Ultra-low threshold avalanche gain from solar-blind photodetector based on graded-band-gap-cubic-MgZnO, Optics Express, 2015.12.8, 23(25): 32329~32336
- Xiuhua Xie; Zhenzhong Zhang; Binghui Li; Shuangpeng Wang; Mingming Jiang; Chongxin Shan; Dongxu Zhao; Hongyu Chen; Dezhen Shen, Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping, Optics Express, 2014.1.2, 22(1): 246~253
- X. H. Xie; Z. Z. Zhang; B. H. Li; S. P. Wang; M. M. Jiang; C. X. Shan; D. X. Zhao; H. Y. Chen; D. Z. Shen, Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer, Applied Physics Letters, 2013.6.12, 102(23)
- X. H. Xie; Z. Z. Zhang; C. X. Shan; H. Y. Chen; D. Z. Shen, Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction, Applied Physics Letters, 2012.8.20, 101(8)
Students
已指导学生
李衍爽 博士研究生 070205-凝聚态物理