宽禁带半导体器件与异质集成

招收有兴趣在宽禁带半导体、碳基半导体等领域开展器件、工艺、机理研究的研究生

080903-微电子学与固体电子学
085400-电子信息

宽禁带半导体器件与异质集成
碳基异质集成
宽禁带半导体表面界面科学

2007-09--2012-07   中国科学院微电子研究所   研究生/工学博士
2003-09--2007-07   南京理工大学   本科/工学学士

   

2022-09~现在, 中国科学院微电子研究所, 研究员，所党委委员，中心主任
2021-10~2022-09,中国科学院微电子研究所, 副研究员，所党委委员，中心主任
2020-12~2021-10,中国科学院微电子研究所, 副研究员，所党委委员，中心副主任，所团委副书记
2018-12~2020-12,中国科学院微电子研究所, 副研究员，中心副主任，所团委副书记
2017-05~2018-12,中国科学院微电子研究所, 副研究员，所团委副书记
2017-04~2017-05,中国科学院微电子研究所, 副研究员，所团委委员
2012-07~2017-04,中国科学院微电子研究所, 助理研究员，所团委委员

2022年中国电子学会自然科学二等奖

2022年中国仪器仪表学会技术发明二等奖

（1） GaN基异质结功率器件表界面态机理与调控, 二等奖, 其他, 2022
（2） GaN电子器件低界面态介质技术与系统, 二等奖, 其他, 2022

（ 1 ） GaN基电子器件及其制备方法, 发明专利, 2020, 第 2 作者, 专利号: 202011128395.5

（ 2 ） 一种匹配氮化镓材料的低界面态复合介质结构及其制备方法, 发明专利, 2020, 第 1 作者, 专利号: 202010369832.6

（ 3 ） GaN基功率晶体管结构及其制备方法, 发明专利, 2020, 第 2 作者, 专利号: 202010127104.4

（ 4 ） 一种匹配(Al,In)GaN材料的超低界面态界面结构及其制备方法, 发明专利, 2018, 第 1 作者, 专利号: 201810593138.5

（ 5 ） GAN-BASED POWER ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME, 发明专利, 2016, 第 3 作者, 专利号: US20170309736A1

（ 6 ） Low Interface State Device and Method for Manufacturing the Same, 发明专利, 2015, 第 3 作者, 专利号: US10276366B2

   

[1] Kexin Deng, Xinhua Wang, Sen Huang, Pengfei Li, Qimeng Jiang, yin haibo, Jie Fan, Ke Wei, Yingkui Zheng, Jingyuan Shi, Xinyu Liu. Effective Suppression of Amorphous Ga2O and Related Deep Levels on GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-based Metal-Insulator-Semiconductor Electronic Devices. ACS Appl. Mater. Interfaces[J]. 2023, 15(20): 25058-25065, [2] 张洪泽, 田野, 孟莹, 母凤文, 王鑫华, 刘新宇. 表面活化室温键合技术研究进展. 机械工程学报[J]. 2022, 58(2): 136-146, http://lib.cqvip.com/Qikan/Article/Detail?id=7106919557.
[3] Guo, Fuqiang, Huang, Sen, Wang, Xinhua, Luan, Tiantian, Shi, Wen, Deng, Kexin, Fan, Jie, Yin, Haibo, Shi, Jingyuan, Mu, Fengwen, Wei, Ke, Liu, Xinyu. Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. APPLIED PHYSICS LETTERS[J]. 2021, 118(9): https://www.webofscience.com/wos/woscc/full-record/WOS:000630475800001.
[4] Wang, Xinhua, Zhang, Yange, Huang, Sen, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Wang, Wenwu, Jiang, Haojie, Wu, Xuebang, Wang, Xianping, Liu, Changsong, Liu, Xinyu. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing. ACS APPLIED MATERIALS & INTERFACES[J]. 2021, 13(6): 7725-7734, http://dx.doi.org/10.1021/acsami.0c19483.
[5] Zhang, Sheng, Liu, Xinyu, Wei, Ke, Huang, Sen, Chen, Xiaojuan, Zhang, Yichuan, Zheng, Yingkui, Liu, Guoguo, Yuan, Tingting, Wang, Xinhua, Yin, Haibo, Yao, Yao, Niu, Jiebin. Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(1): 49-52, http://dx.doi.org/10.1109/TED.2020.3037888.
[6] Deng, Kexin, Wang, Xinhua, Huang, Sen, Yin, Haibo, Fan, Jie, Shi, Wen, Guo, Fuqiang, Wei, Ke, Zheng, Yingkui, Shi, Jingyuan, Jiang, Haojie, Wang, Wenwu, Liu, Xinyu. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures. APPLIED SURFACE SCIENCE[J]. 2021, 542: http://dx.doi.org/10.1016/j.apsusc.2020.148530.
[7] Bi, Lan, Kang, Xuanwu, Wang, Xinhua, Yin, Haibo, Fan, Jie, Wei, Ke, Zheng, Yingkui, Huang, Sen, Liu, Xinyu. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(4): 1778-1783, http://dx.doi.org/10.1109/TED.2021.3058114.
[8] Huang, Sen, Wang, Xinhua, Liu, Xinyu, Li, Yuchen, Fan, Jie, Yin, Haibo, Wei, Ke, Zheng, Yingkui, Sun, Qian, Shen, Bo. Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure. IEEE TRANSACTIONS ON ELECTRON DEVICES[J]. 2021, 68(1): 36-41, http://dx.doi.org/10.1109/TED.2020.3037272.
[9] Huang, Sen, Wang, Xinhua, Liu, Xinyu, Sun, Qian, Chen, Kevin J. An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits. SEMICONDUCTOR SCIENCE AND TECHNOLOGY[J]. 2021, 36(4): http://dx.doi.org/10.1088/1361-6641/abd2fe.
[10] Zhao, Rui, Huang, Sen, Wang, Xinhua, Li, Yuchen, Shi, Jingyuan, Zhang, Yichuan, Fan, Jie, Yin, Haibo, Chen, Xiaojuan, Wei, Ke, Wu, Shan, Yang, Xuelin, Shen, Bo, Liu, Xinyu. Interface charge engineering in down-scaled AlGaN (< 6nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs. APPLIED PHYSICS LETTERS[J]. 2020, 116(10): https://www.webofscience.com/wos/woscc/full-record/WOS:000520479800001.
[11] Zhang, Yichuan, Huang, Sen, Wei, Ke, Zhang, Sheng, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu. Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess. IEEE ELECTRON DEVICE LETTERS[J]. 2020, 41(5): 701-704, https://www.webofscience.com/wos/woscc/full-record/WOS:000530387100012.
[12] Dang, Kui, Wei, Ke, Hao, Yue, Zhang, Jincheng, Zhou, Hong, Huang, Sen, Zhang, Tao, Bian, Zhaoke, Zhang, Yachao, Wang, Xinhua, Zhao, Shenglei. A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer. IEEE TRANSACTIONS ON POWER ELECTRONICS[J]. 2020, 35(3): 2247-2252, http://dx.doi.org/10.1109/TPEL.2019.2938769.
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（ 1 ） 新型GaN电子器件低界面态介质生长系统, 负责人, 国家任务, 2016-01--2021-12
（ 2 ） 宽频段全数字发信机设计理论与关键技术, 负责人, 国家任务, 2017-01--2021-12
（ 3 ） 中国科学院青年创新促进会会员项目, 负责人, 中国科学院计划, 2018-01--2021-12
（ 4 ） 氮化镓集成元件与高功率技术开发, 负责人, 企业委托, 2021-01--2023-12
（ 5 ） 新型高阈值电压GaN电力电子器件模型与关键技术研究, 参与, 国家任务, 2021-01--2024-12
（ 6 ） 高质量表面重构技术, 负责人, 国家任务, 2022-11--2027-12

现指导学生

李鑫杰  硕士研究生  085403-集成电路工程  

邢湘杰  硕士研究生  080903-微电子学与固体电子学  

李红月  硕士研究生  085400-电子信息  

雷依培  硕士研究生  080903-微电子学与固体电子学  

郭宇浩  硕士研究生  085400-电子信息