------【后摩尔EDA器件模型与集成设计方法研究】--------

|--------面向新材料、新器件、新集成多元化的EDA---------

|新型先进器件特性研究：IGZO-FET、2D-FET、GAA-FET、TFT等

|器件模型与集成设计：器件模型开发与EDA集成电路设计方法

|制造端EDA器件仿真工具研究：多尺度、多物理、TCAD仿真

|----------器件物理：可靠性机理与传输机理研究-----------

|缺陷物理与可靠性：器件可靠性（如HCL、BTI等）与传输机理

|---------兼容M3D异质集成芯片（DRAM）集成设计-----------

|协同设计方法研究：以模型为核心的器件-电路协同设计方法

|-------------------------------------------------------

每年招收2名硕士或1硕1博

080903-微电子学与固体电子学
080902-电路与系统
080901-物理电子学

后摩尔器件模型及可靠集成方法
新型器件物理与TCAD方法，多尺度与多物理仿真
EDA新架构电路仿真与异质集成设计

2016-08--2019-08   新加坡国立大学   博士学位
2013-09--2016-07   中国科学院微电子研究所   硕士学位
2009-09--2013-07   电子科技大学   学士学位

   

2022-03~现在, 中国科学院微电子研究所, 研究员
2021-01~2022-03,中国科学院微电子研究所, 副研究员
2019-11~2020-11,新加坡国立大学, 博士后研究员（Reseach Fellow）

   

（ 1 ） 一种获取平面型器件的接触电阻的方法, 发明专利, 2016, 第 5 作者, 专利号: CN105510717A

（ 2 ） 石墨烯晶体管的小信号模型的截止频率的计算方法, 发明专利, 2016, 第 1 作者, 专利号: CN105224717A

   

（1） A core drain current model for β-Ga2O3 power MOSFETs based on surface potential, AIP Advances, 2023, 通讯作者
（2） MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach, Mircromechines, 2023, 通讯作者
（3） A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization, IEEE EDL, 2023, 通讯作者
（4） Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, 通讯作者
（5） Scaling Dual-Gate Ultra-thin a-IGZO FET to 30 nm Channel Length with Record-high Gm,max of 559 µS/µm at VDS=1 V, Record-low DIBL of 10 mV/V and Nearly Ideal SS of 63 mV/dec, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, 
（6） Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory, Advanced Electronic Materials, 2022, 
（7） Physics-based 2-D analytical potential model with disorder effects for scaling a-IGZO TFT via dual material gate engineering, Japanese Journal of Applied Physics, 2022, 通讯作者
（8） Using compact model to verify IGZO RO performance for engineering application, 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), 2022, 
（9） Investigation of Asymmetric Characteristics of Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O Field Effect Transistors, IEEE ELECTRON DEVICE LETTERS, 2022, 第 2 作者
（10） Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs, IEEE International Electron Devices Meeting (IEDM), 2021, 通讯作者
（11） 功率二极管模型, Modeling of power diode, 微纳电子与智能制造, 2021, 第 4 作者
（12） A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application, IEEE International Electron Devices Meeting (IEDM), 2021, 通讯作者
（13） Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing, ACS NANO, 2021, 第 7 作者
（14） A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes, Symposium on VLSI Technology,, 2021, 通讯作者
（15） Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (> 100 dB) and Ultra-low Saturation Voltage (< 0.1 V) by Source Engineering, 2021 Symposium on VLSI Technology, 2021, 第 9 作者
（16） A physical model for dual gate a-InGaZnO thin film transistors based on multiple trapping and release mechanism, MICROELECTRONICS JOURNAL, 2019, 第 6 作者
（17） A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems, JOURNAL OF APPLIED PHYSICS, 2019, 第 1 作者
（18） A Compact Model for 2-D Poly-MoS2 FETs With Resistive Switching in Postsynaptic Simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 第 1 作者
（19） A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors, JOURNAL OF APPLIED PHYSICS, 2018, 第 1 作者
（20） A Surface Potential and Physics Based Compact Model for 2D Polycrystalline MoSFET with Resistive Switching Behavior in Neuromorphic Computing, IEEE International Electron Devices Meeting, 2018, 第 1 作者
（21） A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect, IEEE ELECTRON DEVICE LETTERS, 2018, 第 1 作者
（22） Percolation theory based statistical resistance model for resistive random access memory, APPLIED PHYSICS LETTERS, 2018, 通讯作者
（23） A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration, 2017 IEEE International Electron Devices Meeting (IEDM), 2017, 第 1 作者
（24） Understanding mobility degeneration mechanism in organic thin-film transistors(OTFT), CHEMICAL PHYSICS LETTERS, 2017, 第 5 作者
（25） A review for compact model of graphene field-effect transistors, CHINESE PHYSICS B, 2017, 第 2 作者
（26） A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element, IEEE Silicon Nanoelectronics Workshop, 2016, 第 4 作者
（27） Progress in flexible organic thin-film transistors and integrated circuits, SCIENCE BULLETIN, 2016, 第 5 作者
（28） Analytical carrier density and quantum capacitance for graphene, APPLIED PHYSICS LETTERS, 2016, 第 1 作者
（29） Surface-potential-based physical compact model for graphene field effect transistor, JOURNAL OF APPLIED PHYSICS, 2016, 第 1 作者
（30） An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors, IEEE ELECTRON DEVICE LETTERS, 2015, 第 1 作者
（31） A New Surface Potential Based Physical Compact Model for GFET in RF Applications, 2015, 第 1 作者
（32） Origin of Mobility Degeneration at High Gate Bias in Organic Thin Film Transistors Based on Carriers’ Freeze to Surface Charges, 2015, 第 3 作者
（33） A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 第 6 作者

   

（ 1 ） 高性能氧化物TFT的模型与新型像素驱动架构, 负责人, 国家任务, 2021-12--2025-11
（ 2 ） 后摩尔晶体管紧凑模型技术及新型集成设计方法研究, 负责人, 国家任务, 2023-01--2026-12

（1）Compact Modeling of IGZO-based CAA-FETs with Time-zero-instability and BTI Impact on Device and Capacitor-less DRAM Retention Reliability   超大规模集成电路技术和电路研讨会   2022-06-01
（2）Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs   国际电子器件大会   2021-12-01
（3）A new surface potential and physics based compact model for a-IGZO TFTs at multinanoscale for high retention and low-power DRAM application   国际电子器件大会   2021-12-01
（4）A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes   超大规模集成电路技术和电路研讨会    2021-06-01