080903-微电子学与固体电子学
0805Z2-半导体材料与器件
080901-物理电子学

半导体物理；半导体材料
半导体光电器件；半导体工艺
红外探测器；焦平面探测器

2009-09--2014-06   复旦大学   博士
2005-09--2009-06   华东理工大学   本科

   

2018-09~现在, 中国科学院上海技术物理研究所, 副研究员
2016-07~2018-03,University of California, Los Angeles, Visiting Scholar
2014-07~2018-08,中国科学院上海微系统与信息技术研究所, 助理研究员/副研究员

2021-02-01-今,Electronics, Topic Editor

   

（1） 2-3 微米波段InP 基无锑量子阱激光器材料、器件及应用, 三等奖, 省级, 2015

[1] 徐红艳, 莫德锋, 马英杰, 李雪, 龚海梅. 一种用于微透镜阵列与芯片光敏元焦平面有源对准装置. CN: CN113504611A, 2021-10-15.

[2] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. PIIN型高In组分InGaAs探测器材料结构和制备方法. CN: CN110896114B, 2021-10-01.

[3] 顾溢, 王红真, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 表征InGaAs探测器材料缺陷与器件性能关联性的方法. CN: CN110987981A, 2020-04-10.

[4] 马英杰, 顾溢, 邵秀梅, 李雪, 龚海梅. 一种高均匀性单光子面光源的产生装置. CN: CN110927981A, 2020-03-27.

[5] 顾溢, 王红真, 杨波, 马英杰, 李淘, 邵秀梅, 李雪, 龚海梅. 一种多层InGaAs探测器材料结构和制备方法. CN: CN110896120A, 2020-03-20.

[6] 程吉凤, 李雪, 邵秀梅, 邓双燕, 万露红, 李淘, 马英杰, 龚海梅. 一种控制铟镓砷光敏芯片平面度的平衡层结构. CN: CN110491950A, 2019-11-22.

[7] 程吉凤, 李雪, 邵秀梅, 邓双燕, 陈郁, 杨波, 马英杰, 龚海梅. 带有应力平衡层的大规模铟镓砷焦平面探测器及制备方法. CN: CN110444607A, 2019-11-12.

[8] 马英杰, 顾溢, 邵秀梅, 李雪. 一种宽谱InGaAs雪崩焦平面探测器及其制造方法. CN: CN110047967A, 2019-07-23.

[9] 马英杰, 顾溢, 邵秀梅, 李雪. 一种InGaAs雪崩焦平面探测器的串扰抑制结构. CN: CN110021617A, 2019-07-16.

[10] 顾溢, 陈平平, 王文娟, 马英杰, 张永刚, 邵秀梅, 李雪, 龚海梅. 一种雪崩探测器过渡层结构及制备方法. CN: CN109473496A, 2019-03-15.

   

（1） 分子束外延高铟组分InGaAs薄膜研究, Study on Molecular Beam Epitaxy of High indium InGaAs Films, 红外与毫米波学报, 2022, 第 8 作者
（2） 截止波长2.2μm的平面型延伸波长InGaAs探测器, Planar wavelength-extended In0.75Ga0.25As detector with 2.2-μm cut-off wavelength, 红外与毫米波学报, 2022, 第 6 作者
（3） 320*256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 第 1 作者
（4） 320x256 Extended Wavelength InxGa1-xAs/InP Focal Plane Arrays: Dislocation Defect, Dark Signal and Noise, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2022, 第 1 作者
（5） Noise behaviors of SWIR InxGa1-xAs/InP focal plane arrays as a function of lattice-mismatch degree, Infrared Physics & Technology, 2022, 通讯作者
（6） 采用Ga（In，As）P异变缓冲层的GaP/Si衬底上InAs量子阱, InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers, 红外与毫米波学报, 2022, 第 8 作者
（7） Synthesis, structure, and C–H bond activation reaction of an iron(IV) terminal imido complex bearing trifluoromethyl groups, CELL REPORTS PHYSICAL SCIENCE, 2021, 第 4 作者
（8） High Temperature Behaviors of 1–2.5 μm Extended Wavelength In0.83Ga0.17As Photodetectors on InP Substrate, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2021, 通讯作者
（9） 单光子探测盖革雪崩焦平面用低抖动多相位时钟电路设计, Design of Low-jitter,Multi-phase Clock Generation Circuit for Geiger-mode Avalanche Focal Plane Array Applications, 电子与信息学报, 2021, 第 5 作者
（10） A Full CMOS Quenching Circuit With Fuse Protection for InGaAs/InP Single Photon Detectors, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 第 5 作者
（11） Fabrication of highly-uniform indium ball bumps for small unit-cell infrared focal plane arrays, AOPC 2020: INFRARED DEVICE AND INFRARED TECHNOLOGY, 2020, 通讯作者
（12） Surface Leakage Behaviors of 2.6 mu m In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2020, 通讯作者
（13） Seasonal dynamics of parasitism and stress physiology in wild giant pandas, CONSERVATION PHYSIOLOGY, 2020, 第 3 作者
（14） Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays, ACS APPLIED ELECTRONIC MATERIALS, 2020, 第 2 作者
（15） 短波红外InGaAs焦平面探测器研究进展, Developments of short-wave infrared InGaAs focal plane detectors, 红外与激光工程, 2020, 第 9 作者
（16） Macro-Nutritional Adaptive Strategies of Moose (Alces alces) Related to Population Density, ANIMALS, 2020, 第 1 作者
（17） Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer, INFRARED PHYSICS & TECHNOLOGY, 2020, 第 3 作者
（18） Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 第 4 作者
（19） Ultra-low spectral reflectances of InP Mie resonators on an InGaAs/InP focal plane array, AIP ADVANCES, 2020, 第 3 作者
（20） 数字递变异变赝衬底上2.6μm In0.83Ga0.17As/InP光电探测器的性能改进, Improved performances of 2. 6 μm In0. 83 Ga0. 17 As /InP photodetectors on digitally-graded metamorphic pseudo-substrates, 红外与毫米波学报, 2019, 第 3 作者
（21） Deep levels analysis in wavelength extended InGaAsBi photodetector, 2019, 第 5 作者
（22） Mid-infrared type-I InAs/In0.83Al0.17As quantum wells grown on GaP and InP by gas source molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
（23） Monolithically grown 2.5 mu m InGaAs photodetector structures on GaP and GaP/Si (001) substrates, MATERIALS RESEARCH EXPRESS, 2019, 第 4 作者
（24） Improved performances of 2. 6 mu m In0.83Ga0.17 As/InP photodetectors on digitally-graded metamorphic pseudo-substrates, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 3 作者
（25） Growth mechanisms for InAs/GaAs QDs with and without Bi surfactants, MATERIALS RESEARCH EXPRESS, 2019, 
（26） Towards Surface Leakage Free High Fill-Factor Extended Wavelength InGaAs Focal-Plane Arrays, IEEE JOURNAL OF QUANTUM ELECTRONICS, 2019, 通讯作者
（27） Optimization of In0.6Ga0.4As/InAs electron barrier for In0.74Ga0.26As detectors grown by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH, 2019, 
（28） Monolithically grown 2.5 μmInGaAs photodetector structures on GaP and GaP/Si (001) substrates, Materials Research Express, 2019, 
（29） Deep levels analysis in wavelength extended InGaAsBi photodetector, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 第 5 作者
（30） 数字递变异变赝衬底上2. 6 μm In_（0. 83）Ga_（0. 17） As /InP光电探测器的性能改进, Improved performances of 2. 6 μm In_(0. 83)Ga_(0. 17) As /InP photodetectors on digitally-graded metamorphic pseudo-substrates, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2019, 第 3 作者
（31） Electron-initiated low noise 1064 nm InGaAsP/InAlAs avalanche photodetectors, OPTICS EXPRESS, 2018, 第 1 作者
（32） Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier, INFRARED PHYSICS AND TECHNOLOGY, 2018, 第 3 作者
（33） Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates, AIP ADVANCES, 2018, 
（34） A versatile digitally-graded buffer structure for metamorphic device applications, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 第 1 作者
（35） Wavelength Extended InGaAsBi Detectors with Temperature-Insensitive Cutoff Wavelength, CHINESE PHYSICS LETTERS, 2018, 第 5 作者
（36） Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2018, 第 8 作者
（37） Correction of FTIR acquired photodetector response spectra from mid-infrared to visible bands using onsite measured instrument function, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 6 作者
（38） 3 mu m InAs quantum well lasers at room temperature on InP, APPLIED PHYSICS LETTERS, 2018, 
（39） Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1−xAs buffers, JOURNALOFCRYSTALGROWTH, 2018, 
（40） IGA-rule 17 for performance estimation of wavelength-extended InGaAs photodetectors: validity and limitations, APPLIED OPTICS, 2018, 第 4 作者
（41） InP衬底上InAlAs异变缓冲层和高铟组分InGaAs的生长温度优化, Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate, 红外与毫米波学报, 2018, 第 8 作者
（42） Improved performance of high indium InGaAs photodetectors with InAlAs barrier, JAPANESEJOURNALOFAPPLIEDPHYSICS, 2018, 第 4 作者
（43） Improved performance of In(0.83)Ga(0)A(7)As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier, INFRARED PHYSICS & TECHNOLOGY, 2018, 第 3 作者
（44） Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications, ADVANCED OPTICAL MATERIALS, 2017, 第 1 作者
（45） An effective indicator for evaluation of wavelength extending InGaAs photodetector technologies, INFRARED PHYSICS & TECHNOLOGY, 2017, 第 4 作者
（46） Optical characterization of Si-doped metamorphic InGaAs with high indium content, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 第 4 作者
（47） Optical characterization of Si-doped metamorphic InGaAs with high indium content, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 第 4 作者
（48） Study on the performance of 2.6 mm In0.83Ga0.17As detector with different etch gases, Infrared Physics & Technology, 2017, 第 1 作者
（49） Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases, INFRARED PHYSICS & TECHNOLOGY, 2017, 第 6 作者
（50） InP-based pseudomorphic InAs/InGaAs triangular quantum well lasers with bismuth surfactant., APPLIED OPTICS, 2017, 
（51） Bi2Te3 photoconductive detectors on Si, APPLIED PHYSICS LETTERS, 2017, 第 4 作者
（52） Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides, JOURNAL OF CRYSTAL GROWTH, 2017, 
（53） Anisotropic strain relaxation of Si-doped metamorphic InAlAs graded buffers on InP, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 第 4 作者
（54） 2.25-mu m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP, IEEE PHOTONICS TECHNOLOGY LETTERS, 2017, 
（55） Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors, OPTICS EXPRESS, 2016, 第 1 作者
（56） Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP, APPLIED PHYSICS LETTERS, 2016, 
（57） Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission, APPLIED PHYSICS LETTERS, 2016, 
（58） FTIR测量的宽波数范围发射光谱强度校正, Correction of intensity of emission spectra in a wide wave number range measured by FTIR, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 6 作者
（59） InP-based antimony-free lasers and photodetectors in 2 similar to 3 mu m band, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 4 作者
（60） Correction of intensity of emission spectra in a wide wave number range measured by FTIR, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2016, 第 6 作者
（61） Single germanium quantum dot embedded in photonic crystal nanocavity for light emitter on silicon chip, OPTICS EXPRESS, 2015, 第 2 作者
（62） FTIR测量的量子型光电探测器响应光谱校正, Correction of response spectra of quantum type photodetectors measured by FTIR, JOURNAL OF INFRARED AND MILLIMETER WAVES, 2015, 第 4 作者
（63） Correction of response spectra of quantum type photodetectors measured by FTIR, JOURNALOFINFRAREDANDMILLIMETERWAVES, 2015, 第 4 作者

（1） 半导体光谱测试方法与技术, 科学出版社（北京）, 2016-01, 第 3 作者
（2） 硅锗低维材料可控生长, 科学出版社, 2021-04, 第 1 作者

   

（ 1 ） 基于高铟异变结构的铟镓砷红外APD波长扩展研究, 负责人, 国家任务, 2017-01--2019-12
（ 2 ） 航天激光三维成像近红外APD研究, 参与, 国家任务, 2017-01--2020-12
（ 3 ） Design of waveguide InGaAs/InAlAs APDs towards 50-GHz bandwidth and beyond, 负责人, 企业委托, 2017-12--2019-09
（ 4 ） 波长扩展InGaAs大面积高性能探测材料及器件研究, 参与, 国家任务, 2016-07--2020-12
（ 5 ） 可见-近红外宽光谱铟镓砷线性级联雪崩焦平面研究, 负责人, 国家任务, 2021-01--2024-12
（ 6 ） 大规模低串扰InGaAs盖革雪崩焦平面探测器机理研究, 负责人, 地方任务, 2021-07--2024-06
（ 7 ） 线性模式低噪声雪崩探测器研究, 负责人, 国家任务, 2022-01--2025-12
（ 8 ） 近红外单光子雪崩焦平面探测器研究, 负责人, 国家任务, 2022-01--2025-12