Prof. Weida Hu (胡伟达)
State Key Laboratory of Infrared Physics,
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Address: 500 Yu-Tian Road
Postcode: 200083
 
Weida Hu received his B. S. and M. S. degree in Material of Science from Wuhan University of Technology, Wuhan, China, in 2001 and 2004, respectively, and Ph.D. degree (with honors) in Microelectronics and Solid-State electronics from the Shanghai Institute of Technology Physics, Chinese Academy of Sciences, in 2007. He is currently a full professor (Principal investigator) on fabrication and characterization of infrared photodetectors/photodiodes/phototransistors and their smart chips in Shanghai Institute of Technology Physics, Chinese Academy of Sciences.
He has authored or coauthored more than 180 technical journal papers and conference presentations with the total citations of 12680 and h-index of 61. He received the National Science Fund for Distinguished Young Scholars in 2017, China Youth Science and Technology Award in 2019, National Science Fund for Excellent Young Scholars in 2013, and National Program for Support of Top-notch Young Professionals in 2015. He is selected as the Royal Society-Newton Advanced Fellowship in 2017. He is also serving as the Associate Editor of Infrared Physics & Technology, the Executive Editor of Optical and Quantum Electronics, the Program Committee of SPIE DCS Defense and Security - Infrared Technology and Applications (USA), and the Program Committee of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
His email address is wdhu@mail.sitp.ac.cn.
Google scholar   Publons
 
Group Members
Professor: Jinshui Miao joined Shanghai Institute of Technical Physics, Chinese Academy of Sciences (SITP-CAS) as a professor in 2020. Before joining SITP-CAS, he was a postdoctoral researcher at the Electrical and Systems Engineering of the University of Pennsylvania working with Professor Deep M. Jariwala since 2018. Jinshui Miao received his Ph.D. in Electrical Engineering from Michigan State University in May 2018 under supervision of Professor Chuan Wang. Jinshui Miao received his B.S. in Applied Physics and M.S. in Condensed Matter Physics from Shandong University (2011) and University of Chinese Academy of Sciences (2014, advisor: Weida Hu), respectively. Jinshui Miao's work during his Ph.D. and postdoc pioneered in the field of using low-dimensional semiconductors for high-performance electronic and optoelectronic devices. He has published 28 papers with citations of more than 1300 (Google Scholar) since 2014. He served as co-chair of 2018/2019 IEEE international conference on nanotechnology, guest editors of IOP Nanotechnology and Frontiers in Physics, and journal reviewers of many SCI journals. His current research areas including bio-inspired infrared vision devices and systems, flexible infrared photodetectors, neural network infrared vision sensors, etc. We always welcome talented students and postdocs to join us. Please feel free to contact: jsmiao@mail.sitp.ac.cn.  
For more information, please visit: http://people.ucas.edu.cn/~miaojinshui

Junior professor:  Peng Wang, junior professor at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He received his Ph.D. degree in material science and engineering from Anhui University in 2018. His main research interest is focus on low dimensional materials, bulk materials and devices for infrared photodetections. He has published more than 20 first author and corresponding author SCI papers in Nature Communications, Science Advances, Advanced Materials, etc. He has also coauthored in more than 60 SCI papers, which has more than 4,000 times citations with h index of 33. He received the National Science Fund for Excellent Young Scholars in 2021, Youth Innovation Promotion Association CAS in 2021, China Association for Science and Technology Young Talents Promotion Project in 2020, Shanghai Sailing Program in 2019, Young Scientist Award of IEEE-ICOCN in 2019. He is serving as a member of Young Scientist Committee of Chinese Physics Letters, Chinese Physics B, Acta Physics Sinica and Physics. He is also serving as the Editorial Board Member & Guest Editor of Sensors. His email address is w_peng@mail.sitp.ac.cn.
 
Postdoctor: Lili Zhang received her Ph.D. degree in Optics from FuDan University, Shanghai, China, in 2019, M.S. degree in Optics from South China Normal University, Guangzhou, China, in 2015, and B.S. degree in Physics from HuBei University, Wuhan, China, in 2012. She is currently a postdoctor in Prof. Weida Hu’s and FanSheng Chen's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. Her research interests focus on applications of optical imaging and infrared optoelectronic technologies in biomedicine. She has authored and co-authored more than 20 journal papers. Her email address is zhanglili@mail.sitp.ac.cn.     
 
Postdoctor: Fang Wang received her Ph.D. degree in Science from East China Normal University, Shanghai, China, in 2019, and B.S. degree in Electronics and Information Engineering from Donghua University, Shanghai, China, in 2010. She is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. Her research interests focus on mechanism and application of infrared photodetectors based on HgCdTe. She has received the CAS Special Research Assistant Program and Shanghai Sailing Program in 2020. She has authored or coauthored more than 20 technical journal papers. Her email address is fwang@mail.sitp.ac.cn.
 
Postdoctor: Zhen Wang received his Ph.D. degree in condensed matter physics from Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China, in 2020, and B.S. degree in material physics from Hubei University, Wuhan, China, in 2015. He is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on the fabrication, mechanism, and application of low-dimensional materials (nanowires and two-dimensional materials) infrared photodetectors. He has received the Special Prize of President Scholarship of Chinese Academy of Sciences, postdoctoral innovative talents support program, CAS Special Research Assistant Program and Shanghai Sailing Program in 2021. He has authored or coauthored more than 20 technical journal papers, including Nature Electronics, Science Advances, Nature Communications, Advanced Materials, and Advanced Functional Materials. His email address is wangzhen@mail.sitp.ac.cn.
 
Postdoctor: Qing Li received his Ph.D. degree from Shanghai Institute of Technical Physics, Shanghai, China, in 2020, and B.S. degree and from Qingdao University, Shandong, China, in 2014. He is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on mechanism and application of infrared photodetectors. His email address is liqing@mail.sitp.ac.cn


Postdoctor: Xiao Fu received his Ph.D. degree from Dongguk University of Nano Information Technology Academy, Dongguk University, Seoul, Korea, in 2020, and B.S. degree and from Shandong Normal University, Shandong, China, in 2011. He is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on Memristive devices for neuromorphic computing. He has received the Shanghai Sailing Program in 2021His email address is xiaofu.04@ucas.ac.cn


Postdoctor: Ting He received her Ph.D. degree in Microelectronics from Shanghai Institute of Technical Physics, Shanghai, China, in 2021, and B.S. degree in Optics from Dalian University of Technology, Dalian, China, in 2016. She is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. Her research interests focus on mechanism and application of two-dimensional and silicon-based infrared photodetectors. Her email address is heting@mail.sitp.ac.cn


Postdoctor: Runzhang Xie received his Ph.D. degree in Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China, in 2021, and B.S. degree in School of Physical Science and Technology, Lanzhou University, Lanzhou, China in 2014. He is currently a postdoctor in Prof. Weida Hu's group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on the theory, design, and fabrication of artificial photonic structure infrared photodetectors. He has authored or coauthored more than 13 technical journal papers. His email address is xierunzhang@mail.sitp.ac.cn.

Research Areas

1. Low-dimensional infrared photodetectors/photodiodes/phototransistors: a) device fabrication and physics of two-dimensional material (Graphene, TMDs, Black Phosphorus, Black Arsenic–Phosphorus, PdSe, PdSeS, Tellurium) photodetectors; surface plasmon polariton (SPP) resonance and polarized enhanced two-dimensional material photodetectors; b) device fabrication and physics of narrow band-gap nanowire (InAs, InGaAs, InP) infrared photodetectors/phototransistors.

2. Thin-film infrared photodetectors/photodiodes: device physics, design, and space applications of HgCdTe and Si BIB based infrared photodetectors for third-generation infrared remote sensing, such as long-wavelength infrared photodiodes, two-color infrared photodetectors, and infrared avalanche photodiodes (APD).

3. Sensing-memory-processing smart chips based on novel optoelectronic and electronic devices.

Selected Journal Publications

National Science Review (2021 Impact factor 17.275)
Science (2021 Impact factor 47.728)
Science Advances (2021 Impact factor 14.136)
Nature Electronics (2021 Impact factor 33.686)
Nature Nanotechnology (2021 Impact factor 39.213)
Nature Communications (2021 Impact factor 14.919)
Light: Science & Applications (2021 Impact factor 17.782)
Optics Letters (2021 Impact factor 3.776)
Optics Express (2021 Impact factor 3.894) 
IEEE Journal of Selected Topics in Quantum Electronics (2021 Impact factor 6.856)
IEEE Electron Device Letters (2021 Impact factor 4.187)
IEEE Transactions on Electron Devices (2021 Impact factor 2.917)
Applied Physics Letters (2021 Impact factor 3.791)
Infrared Physics & Technology (2021 Impact factor 2.638)
Advanced Materials (2021 Impact factor 30.849)
Advanced Functional Materials (2021 Impact factor 18.808)
Advanced Science (2021 Impact factor 16.806)
Small (2021 Impact factor 13.281)
Nano Letters (2021 Impact factor 11.189)
 
2021
[80] Zhenhan Zhang, Shuiyuan Wang, Chunsen Liu, Runzhang Xie, Weida Hu* and Peng Zhou*, All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition, Nature Nanotechnology (2021) DOI: 10.1038/s41565-021-01003-1
[79]  Lei Tong, Zhuiri Peng, Runfeng Lin, Zheng Li, Yilun Wang, Xinyu Huang, Kan-Hao Xue, Hangyu Xu, Feng Liu, Hui Xia, Peng Wang, Mingsheng Xu, Wei Xiong, Weida Hu*, Jianbin Xu, Xinliang Zhang, Lei Ye*, Xiangshui Miao, 2D materials–based homogeneous transistor-memory architecture for neuromorphic hardware, Science, 373 (6561), 1353-1358 (2021).  Highlighted by Science; Highlighted by Nature ElectronicsHighlighted by NSFC
[78] Yunfeng Chen, Yang Wang, Zhen Wang, Yue Gu, Yan Ye, Xuliang Chai, Jiafu Ye, Yan Chen, Runzhang Xie, Yi Zhou, Zhigao Hu, Qing Li, Lili Zhang, Fang Wang, Peng Wang, Jinshui Miao, Jianlu Wang, Xiaoshuang Chen, Wei Lu, Peng Zhou*, Weida Hu*, Unipolar barrier photodetectors based on van der Waals heterostructures, Nature Electronics, 4, 357-363 (2021). ESI Highly Cited Paper, Highlighted by NSFCHighlighted by Tech XploreHighlighted by Nanowerk
[77] Huawei Chen, Xiaoyong Xue, Chunsen Liu, Jinbei Fang, Zhen Wang, Jianlu Wang, David Wei Zhang, Weida Hu*, and Peng Zhou*, Logic gates based on neuristors made from two-dimensional materials, Nature Electronics, 4, 399-404 (2021). Highlighted by Tech Xplore
[76] Meng Peng, Runzhang Xie, Zhen Wang*, Peng Wang*, Fang Wang*, Haonan Ge, Yang Wang, Fang Zhong, Peisong Wu, Jiafu Ye, Qing Li, Lili Zhang, Xun Ge, Yan Ye, Yuchen Lei, Wei Jiang, Zhigao Hu, Feng Wu, Xiaohao Zhou, Jinshui Miao, Jianlu Wang, Hugen Yan, Chongxin Shan, Jiangnan Dai, Changqing Chen, Xiaoshuang Chen, Wei Lu, Weida Hu*, Blackbody sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition, Science Advances, 7 (16), eabf7358 (2021).  Highlighted by Nanowerk
[75] Yan Chen, Xudong Wang, Le Huang, Xiaoting Wang, Wei Jiang, Zhen Wang, Peng Wang, Binmin Wu, Tie Lin, Hong Shen, Zhongming Wei*, Weida Hu*, Xiangjian Meng, Junhao Chu, Jianlu Wang*, Ferroelectric-tuned van der Waals heterojunction with band alignment evolutionNature Communications, 12, 4030 (2021).
[74] Ting He, Zhen Wang, Ruyue Cao, Qing Li*, Meng Peng, Runzhang Xie, Yan Huang, Yang Wang, Jiafu Ye, Peisong Wu, Fang Zhong, Tengfei Xu, Hailu Wang, Zhuangzhuang Cui, Qinghua Zhang, Lin Gu, Hui-Xiong Deng, He Zhu, Chongxin Shan, Zhongming Wei*, Weida Hu*, Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides, Small, 17 (4), 2006765 (2021). Front cover
[73] Runzhang Xie, Peng Wang, Fang Wang, Xiaoshuang Chen, Wei Lu, Weida Hu*, Simultaneous control of intensity, phase, and polarization in real time under a weak oscillation theory, Optics Letters, 46 (6), 1361-1364 (2021).
[72] Invited Review: Fang Zhong, Hao Wang, Zhen Wang*, Yang Wang, Ting He, Peisong Wu, Meng Peng, Hailu Wang, Tengfei Xu, Fang Wang, Peng Wang, Jinshui Miao, Weida Hu*, Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies, Nano Research, 14 (6), 1840–1862 (2021).
2020
[71] Lei Tong, Xinyu Huang, Peng Wang, Lei Ye*, Meng Peng, Licong An, Qiaodong Sun, Yong Zhang, Guoming Yang, Zheng Li, Fang Zhong, Fang Wang, Yixiu Wang, Maithilee Motlag, Wenzhuo Wu*, Gary J. Cheng* and Weida Hu*, Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature, Nature Communications, 11, 2308 (2020). ESI Highly Cited Paper
[70] Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu*, Qi Liu*, Jianlu Wang*, Ming Liu, Junhao Chu, Ultrasensitive Negative Capacitance Phototransistors, Nature Communications, 11, 101 (2020). ESI Highly Cited Paper
[69] Chenglong Li, Hailu Wang, Fang Wang*, Tengfei Li, Mengjian Xu, Hao Wang, Zhen Wang, Xiaowei Zhan, Weida Hu*, Liang Shen*, Ultrafast and broadband photodetectors based on a perovskite/organic bulk heterojunction for large-dynamic-range imaging, Light: Science & Applications, 9, 31 (2020). ESI Hot Paper, ESI Highly Cited Paper
[68] Jiayue Han, Meiyu He, Ming Yang, Qi Han, Fang Wang, Fang Zhong, Mengjian Xu, Qing Li, He Zhu, Chongxin Shan, Weida Hu*, Xiaoqing Chen, Xinran Wang*, Jun Gou, Zhiming Wu, Jun Wang*, Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents, Light: Science & Applications, 9 (1), 167 (2020).
[67] Wei Jiang, Tan Zheng, Binmin Wu, Hanxue Jiao, Xudong Wang, Yan Chen, Xiaoyu Zhang, Meng Peng, Hailu Wang, Tie Lin, Hong Shen, Jun Ge, Weida Hu*, Xiaofeng Xu*, Xiangjian Meng, Junhao Chu, Jianlu Wang*, A versatile photodetector assisted by photovoltaic and bolometric effects, Light: Science & Applications, 9 (1), 160 (2020).
[66] Yang Wang, Peisong Wu, Zhen Wang*, Man Luo*, Fang Zhong, Xun Ge, Kun Zhang, Meng Peng, Yan Ye, Qing Li, Haonan Ge, Jiafu Ye, Ting He, Yunfeng Chen, Tengfei Xu, Chenhui Yu, Yueming Wang, Zhigao Hu, Xiaohao Zhou, Chongxin Shan, Mingsheng Long, Peng Wang, Peng Zhou*, Weida Hu*, Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection, Advanced Materials, 32 (45), 2005037 (2020).
[65] Guangjian Wu, Xudong Wang, Yan Chen, Shuaiqin Wu, Binmin Wu, Yiyang Jiang, Hong Shen, Tie Lin, Qi Liu, Xinran Wang, Peng Zhou, Shantao Zhang*, Weida Hu*, Xiangjian Meng, Junhao Chu, Jianlu Wang*, MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization, Advanced Materials, 32 (16), 1907937 (2020). ESI Highly Cited Paper
[64] Zhen Wang, Peng Wang, Fang Wang*, Jiafu Ye, Ting He, Feng Wu, Meng Peng, Peisong Wu, Yunfeng Chen, Fang Zhong, Runzhang Xie, Zhuangzhuang Cui, Liang Shen, Qinghua Zhang*, Lin Gu, Man Luo, Yang Wang, Huawei Chen, Peng Zhou, Anlian Pan, Xiaohao Zhou*, Lili Zhang, Weida Hu*, A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors, Advanced Functional Materials, 30 (5), 1907945 (2020). (Front cover)
[63] Nan Guo,* Lin Xiao, Fan Gong, Man Luo, Fang Wang, Yi Jia, Huicong Chang, Junku Liu, Qing Li, Yang Wu, Yang Wang, Chongxin Shan, Yang Xu, Peng Zhou,* and Weida Hu*, Light-Driven WSe2-ZnO Junction Field-Effect Transistors for High-Performance Photodetection, Advanced Science, 7 (1), 1901637 (2020).
[62] Jiale He, Qing Li, Peng Wang*, Fang Wang, Yue Gu, Chuan Shen, Man Luo, Chenhui Yu, Lu Chen, Xiaoshuang Chen, Wei Lu, Weida Hu*, Design of a bandgap-engineered barrier-blocking HOT HgCdTe long-wavelength infrared avalanche photodiode, Optics Express, 28 (22), 33556-33563 (2020).
[61] Jiale He, Peng Wang*, Qing Li , Fang Wang*, Yue Gu, Chuan Shen, Lu Chen, Piotr Martyniuk, Antoni Rogalski, Xiaoshuang Chen, Wei Lu, and Weida Hu*, Enhanced Performance of HgCdTe Long-Wavelength Infrared Photodetectors With nBn Design, IEEE Transactions on Electron Devices, 67 (5), 2001-2007 (2020).
[60] Qing Li, Fang Wang, Peng Wang*, Lili Zhang, Jiale He, Lu Chen, Piotr Martyniuk, Antoni Rogalski, Xiaoshuang Chen, Wei Lu, and Weida Hu*, Enhanced performance of HgCdTe mid-wavelength infrared electron avalanche photodetectors with guard ring design, IEEE Transactions on Electron Devices, 67 (2), 542-546 (2020).
 
2019
[59] Feng Wu, Qing Li, Peng Wang*, Hui Xia, Zhen Wang, Yang Wang, Man Luo, Long Chen, Fansheng Chen, Jinshui Miao, Xiaoshuang Chen, Wei Lu, Chongxin Shan, Anlian Pan, Xing Wu*, Wencai Ren, Deep Jariwala and Weida Hu*, High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region, Nature Communications, 10, 4663 (2019).
[58] Mingsheng Long, Yang Wang, Peng Wang, Xiaohao Zhou, Hui Xia, Chen Luo, Shenyang Huang, Guowei Zhang, Hugen Yan, Zhiyong Fan, Xing Wu*, Xiaoshuang Chen*, Wei Lu, Weida Hu*, Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability, ACS Nano, 13 (2), 2511–2519 (2019).
[57] Mingxing Zhao, Wei Xia, Yang Wang, Man Luo, Zhen Tian, Yanfeng Guo*, Weida Hu*, Jiamin Xue*, Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response, ACS Nano, 13 (9), 10705-10710 (2019).
[56] Invited Review: Mingsheng Long, Peng Wang, Hehai Fang, and Weida Hu*, Progress, Challenges, and Opportunities for 2D Material Based Photodetectors, Advanced Functional Materials, 29 (19), 1803807 (2019). ESI Hot Paper, ESI Highly Cited Paper
[55] Feng Wu, Hui Xia, Haiding Sun, Junwei Zhang, Fan Gong, Zhen Wang, Long Chen, Peng Wang, Mingsheng Long, Xing Wu, Jianlu Wang*, Wencai Ren, Xiaoshuang Chen, Wei Lu, Weida Hu*, AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity, Advanced Functional Materials, 29 (12), 1900314 (2019).
[54] Tong Tong, Yunfeng Chen, Shuchao Qin, Weisheng Li, Junran Zhang, Chunhui Zhu, Chunchen Zhang, Xiao Yuan, Xiaoqing Chen, Zhonghui Nie, Xinran Wang, Weida Hu*, Fengqiu Wang*, Wenqing Liu, Peng Wang, Xuefeng Wang*, Rong Zhang*, Yongbing Xu*, Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi2O2Se Nanosheets, Advanced Functional Materials, 29 (50), 1905806 (2019).
[53] Xudong Wang, Hong Shen, Yan Chen, Guangjian Wu, Peng Wang, Hui Xia, Tie Lin, Peng Zhou, Weida Hu*, Xiangjian Meng, Junhao Chu, Jianlu Wang, Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 µm, Advanced Science, 6 (15), 1901050 (2019).
[52] Invited Review: Peng Wang, Hui Xia, Qing Li, Fang Wang*, Lili Zhang, Tianxin Li*, Piotr Martyniuk, Antoni Rogalski, and Weida Hu*, Sensing infrared photons at room temperature: from bulk materials to atomic layers, Small, 15 (46), 1904396 (2019).
[51] Yicheng Tang, Zhen Wang, Peng Wang*, Feng Wu, Yueming Wang, Yunfeng Chen, Hailu Wang, Meng Peng, Chongxin Shan, Zhihong Zhu*, Shiqiao Qin, Weida Hu*, WSe2 Photovoltaic Device Based on Intramolecular p–n Junction, Small, 15 (12), 1805545 (2019).
[50] Lei Tong, Xiaoyan Duan, Luyao Song, Tiande Liu, Lei Ye*, Xinyu Huang, Peng Wang, Yuanhui Sun, Xin He, Lijun Zhang*, Ke Xu, Weida Hu*, Jian-Bin Xu, Jianfeng Zang*, Gary J Cheng*, Artificial control of in-plane anisotropic photoelectricity in monolayer MoS2, Applied Materials Today, 15, 203-211 (2019).
[49] He Zhu*, Chao Wang, Peng Wang, Jiale He, Weida Hu*, Optimized Si-Based Blocked Impurity Band Detector Under Alternative Operational Mode, IEEE Transactions on Electron Devices, 66 (9), 3891-3895 (2019).
 
2018
[48] Wenjin Luo, Qianchun Weng, Mingsheng Long, Peng Wang, Fan Gong, Hehai Fang, Man Luo, Wenjuan Wang, Zhen Wang, Dingshan Zheng, Weida Hu*, Xiaoshuang Chen, and Wei Lu*, Room-temperature single-photon detector based on single nanowire, Nano Letters, 18 (9), 5439–5445 (2018).
[47] Dingshan Zheng, Hehai Fang, Mingsheng Long*, Feng Wu, Peng Wang, Fan Gong, Xing Wu, Johnny C Ho, Lei Liao*, Weida Hu*, High-Performance Near-Infrared Photodetectors Based on p-type SnX (X= S, Se) Nanowires Grown via Chemical Vapor Deposition, ACS Nano, 12 (7), 7239–7245 (2018).
[46] Ziqi Zhou, Mingsheng Long, Longfei Pan, Xiaoting Wang, Mianzeng Zhong, Mark Blei, Jianlu Wang, Jingzhi Fang, Sefaattin Tongay*, Weida Hu*, Jingbo Li, Zhongming Wei*, Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs, ACS Nano, 12 (12), 12416–12423 (2018)
[45] Peng Wang, Yang Wang, Lei Ye, Mingzai Wu*, Runzhang Xie, Xudong Wang, Xiaoshuang Chen, Zhiyong Fan, Jianlu Wang*, Weida Hu*, Ferroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current, Small, 14 (22), 1800492 (2018).
[44] Invited Paper: Yicheng Tang, Hehai Fang, Mingsheng Long, Gang Chen, Zhe Zheng, Jin Zhang, Wenjia Zhou, Zhijun Ning, Zhihong Zhu, Yin Feng, Shiqiao Qin, Xiaoshuang Chen, Wei Lu, Weida Hu*, Significant Enhancement of Single-Walled Carbon Nanotube Based Infrared Photodetector Using PbS Quantum Dots, IEEE Journal of Selected Topics in Quantum Electronics, 24 (6), 3801608 (2018).
[43] Qing Li, Jiale He, Weida Hu*, Lu Chen, Xiaoshuang Chen, Wei Lu, Influencing Sources for Dark Current Transport and Avalanche Mechanisms in Planar and Mesa HgCdTe pin Electron-Avalanche Photodiodes, IEEE Transactions on Electron Devices, 65 (2), 572-576 (2018).
[42] Yan Chen, Xudong Wang, Guangjian Wu, Zhen Wang, Hehai Fang, Tie Lin*, Shuo Sun, Hong Shen, Weida Hu*, Jianlu Wang*, Jinglan Sun, Xiangjian Meng, Junhao Chu, High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure, Small, 14 (9), 1703293 (2018).
[41] Yicheng Tang, Feng Wu, Fansheng Chen*, Yi Zhou*, Peng Wang, Mingsheng Long, Wenjia Zhou, Zhijun Ning, Jiawei He, Fan Gong, Zhihong Zhu*, Shiqiao Qin, Weida Hu*, A Colloidal‐Quantum‐Dot Infrared Photodiode with High Photoconductive Gain, Small, 14 (48), 1803158 (2018).
 
2017
[40] Tiefeng Yang, Biyuan Zheng, Zhen Wang, Tao Xu, Chen Pan, Juan Zou, Xuehong Zhang, Zhaoyang Qi, Hongjun Liu, Yexin Feng, Weida Hu*, Feng Miao, Litao Sun, Xiangfeng Duan, and Anlian Pan*, Van der Waals epitaxial growth and optoelectronics of large scale WSe2/SnS2 vertical bilayer p-n junctions, Nature Communications, 8, 1906 (2017).
[39] Mingsheng Long, Anyuan Gao, Peng Wang, Hui Xia, Claudia Ott, Chen Pan, Yajun Fu, Erfu Liu, Xiaoshuang Chen, Wei Lu, Tom Nilges, Jianbin Xu, Xiaomu Wang*, Weida Hu*, Feng Miao*, Room-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus, Science Advances, 3, e1700589 (2017). ESI Highly Cited Paper
[38] Peng Wang, Shanshan Liu, Wenjin Luo, Hehai Fang, Fan Gong, Nan Guo, Zhi-Gang Chen, Jin Zou, Yan Huang, Xiaohao Zhou, Jianlu Wang, Xiaoshuang Chen*, Wei Lu, Faxian Xiu*, and Weida Hu*, Arrayed van der Waals Broadband detectors for Dual band detection, Advanced Materials, 29 (16), 1604439 (2017).    ESI Highly Cited Paper
[37] Sichao Du, Wei Lu, Ayaz Ali Hakro, Pei Zhao, Khurram Shehzad, Hongwei Guo, Lingling Ma, Xuemei Liu, Xiaodong Pi, Peng Wang, Hehai Fang, Zhen Xu, Chao Gao, Yaping Dan, Pingheng Tan, Hongtao Wang, Cheng-Te Lin, Jianyi Yang, Shurong Dong, Zhiyuan Cheng, Erping Li, Wenyan Yin, Jikui Luo, Bin Yu, Tawfique Hasan, Yang Xu,* Weida Hu,* and Xiangfeng Duan, Broadband Fluorographene Photodetector, Advanced Materials, 29 (22), 1700463 (2017).
[36] Invited Review: Jianlu Wang, Hehai Fang, Xudong Wang, Xiaoshuang Chen, Wei Lu, and Weida Hu*, Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet, Visible to Infrared, Small, 13, 1700894 (2017).
[35] Zhenyi Ni, Lingling Ma, Sichao Du, Yang Xu*, Meng Yuan, Hehai Fang, Zhen Wang, Mingsheng Xu, Dongsheng Li, Jianyi Yang, Weida Hu*, Xiaodong Pi*, and Deren Yang*, Plasmonic Silicon Quantum Dots Enabled High-Sensitivity Ultra-Broadband Photodetection of Graphene-Based Hybrid Phototransistors, ACS Nano, 11 (10), 9854–9862 (2017). ESI Highly Cited Paper
[34] Hongzheng Tian, Xudong Wang, Yuankun Zhu, Lei Liao, Xianying Wang*, Jianlu Wang*, and Weida Hu*, High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets, Applied Physics Letters, 110, 043505 (2017)
[33] Invited Review: Hehai Fang, Weida Hu*, Photogating in Low Dimensional Photodetectors, Advanced Science, 4 (12), 1700323 (2017). ESI Hot Paper, ESI Highly Cited Paper
[32] Yantao Li, Weida Hu*, Zhenhua Ye, Yiyu Chen, Xiaoshuang Chen, and Wei Lu, Direct mapping and characterization of dry etch damage induced PN junction for long wavelength HgCdTe infrared detector arrays, Optics Letters, 42 (7), 1325-1328 (2017).
[31] Lei Ye, Peng Wang, Wenjin Luo, Fan Gong, Lei Liao, Tiande Liu, Lei Tong, Jianfeng Zang, Jianbin Xu*, and Weida Hu*, Highly polarization sensitive infrared photodetector based on black phosphorus-on-WSe2 photogate vertical heterostructure, Nano Energy, 37, 53-60 (2017).
 
2016
[30] Dingshan Zheng, Hehai Fang, Peng Wang, Wenjin Luo, Fan Gong, Johnny C. Ho, Xiaoshuang Chen, Wei Lu, Lei Liao*, Jianlu Wang*, and Weida Hu*, High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors, Advanced Functional Materials, 26 (42), 7690–7696 (2016).
[29] Hehai Fang, Weida Hu*, Peng Wang, Nan Guo, Wenjin Luo, Dingshan Zheng, Fan Gong, Man Luo, Hongzheng Tian, Xutao Zhang, Chen Luo, Xing Wu, Pingping Chen, Lei Liao, Anlian Pan, Xiaoshuang Chen*, and Wei Lu, Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire, Nano Letters, 16 (10), 6416–6424 (2016).
[28] Enze Zhang, PengWang, Zhe Li, Haifeng Wang, Chaoyu Song, Ce Huang, Zhi-Gang Chen, Lei Yang, KaitaiZhang, Shiheng Lu, Weiyi Wang, Shanshan Liu, Hehai Fang, Xiaohao Zhou, HugenYan, Jin Zou, Xiangang Wan, Peng Zhou*, Weida Hu*, and Faxian Xiu*, Tunable Ambipolar Polarization Sensitive Photodetectors Based on High Anisotropy ReSe2 Nanosheets, ACS Nano, 10 (8), 8067–8077 (2016).
[27] Nan Guo,* Weida Hu,* Tao Jiang, Fan Gong, Wenjin Luo, Weicheng Qiu, Peng Wang, Lu Liu, Shiwei Wu, Lei Liao, Xiaoshuang Chen, and Wei Lu, High-Quality Infrared Imaging with Graphene Photodetectors at Room Temperature, Nanoscale, 8, 16065–16072 (2016).
[26] Dingshan Zheng, Jianlu Wang, Weida Hu*, Lei Liao*, Hehai Fang, Nan Guo, Peng Wang, Fan Gong, Xudong Wang, Zhiyong Fan, Xing Wu, Xiangjian Meng, Xiaoshuang Chen, and Wei Lu, When nanowire meet ultra-high ferroelectric field – high performance full-depleted nanowire photodetectors, Nano Letters, 16 (4), 2548–2555 (2016).
[25] Mingsheng Long, Erfu Liu, Peng Wang, Anyuan Gao, Hui Xia, Wei Luo, Baigeng Wang*, Junwen Zeng, Yajun Fu, Kang Xu, Wei Zhou, Yangyang Lv, Shuhua Yao, Minghui Lu, Yanfeng Chen, Zhenhua Ni, Yumeng You, Xueao Zhang, Shiqiao Qin, Yi Shi, Weida Hu*, Dingyu Xing, and Feng Miao*, Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure, Nano Letters, 16 (4), 2254–2259 (2016).
[24] Fan Gong, Wenjin Luo, Jianlu Wang, Peng Wang, Hehai Fang, Dingshan Zheng, Nan Guo, Jingli Wang, Man Luo, Johnny C. Ho, Xiaoshuang Chen, Wei Lu, Lei Liao*, and Weida Hu*, High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2, Advanced Functional Materials, 26 (33), 6084–6090 (2016).
[23] Hai Huang, Jianlu Wang, Weida Hu*, Lei Liao, Peng Wang, Xudong Wang, Fan Gong, Yan Chen, Guangjian Wu, Wenjin Luo, Hong Shen*, Tie Lin, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Junhao Chu, Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect, Nanotechnology, 27 (44), 445201 (2016).
[22] Weicheng Qiu, Weida Hu*, Chun Lin, Xiaoshuang Chen, and Wei Lu, Surface Leakage Current in 12.5μm Long-wavelength HgCdTe Infrared Photodiode Arrays, Optics Letters, 41 (4), 828-831 (2016).
[21] Longfei Lv, Yibing Xu, Hehai Fang, Wenjin Luo, Fangjie Xu, Limin Liu, Biwei Wang, Xianfeng Zhang, Dong Yang,* Weida Hu* and Angang Dong, Generalized colloidal synthesis of high-quality, two-dimensional cesium lead halide perovskite nanosheets and their applications in photodetectors, Nanoscale, 8, 13589-13596 (2016). ESI Highly Cited Paper. This article is part of themed collection: 2016 Nanoscale HOT Article Collection
 
2015
[20] Xudong Wang, Peng Wang, Jianlu Wang*, Weida Hu*, Xiaohao Zhou, Nan Guo, Hai Huang, Shuo Sun, Hong Shen, Tie Lin, Minghua Tang, Lei Liao, Anquan Jiang, Jinglan Sun, Xiangjian Meng, Xiaoshuang Chen, Wei Lu, and Junhao Chu, Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics, Advanced Materials, 27 (42), 6575–6581 (2015). ESI Hot Paper, ESI Highly Cited Paper 
[19] Xiang Yuan, Lei Tang , Shanshan Liu, Peng Wang, Zhi-Gang Chen, Cheng Zhang, Yanwen Liu, Weiyi Wang, Yichao Zou, Cong Liu, Nan Guo, Jin Zou , Peng Zhou*, Weida Hu*, and Faxian Xiu*, Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy, Nano Letters, 15, 3571-3577 (2015).
[18] Shanshan Liu, Xiang Yuan, Peng Wang, Zhi-Gang Chen, Lei Tang, Enze Zhang, Cheng Zhang, Yanwen Liu, Weiyi Wang, Cong Liu, Chen Chen, Jin Zou, Weida Hu*, and Faxian Xiu*, Controllable Growth of Vertical Heterostructure GaTexSe1-x/Si by Molecular Beam Epitaxy, ACS Nano, 9 (8), 8592–8598 (2015).
[17] Enze Zhang, Yibo Jin, Xiang Yuan, Weiyi Wang, Cheng Zhang, Lei Tang, Shanshan Liu, Peng Zhou*, Weida Hu* and Faxian Xiu*, ReS2-based field-effect transistors and photodetectors, Advanced Functional Materials, 25 (26), 4076–4082 (2015). ESI Highly Cited Paper
[16] Jinshui Miao, Weida Hu,* Youliang Jing, Wenjin Luo, Lei Liao,* Anlian Pan, Shiwei Wu, Jingxin Cheng, Xiaoshuang Chen, and Wei Lu, Surface Plasmon-Enhanced Photodetection in Few-Layer MoS2 Phototransistors with Au Nanostructure Arrays, Small, 11, 2392–2398 (2015). ESI Highly Cited Paper
[15] Jinshui Miao, Weida Hu*, Nan Guo, Zhenyu Lu, Xingqiang Liu, Lei Liao*, Pingping Chen, Tao Jiang, Shiwei Wu, Johnny C. Ho, Lin Wang, Xiaoshuang Chen, and Wei Lu, High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratio, Small, 11, 936-942 (2015).  
[14] Wei-Cheng Qiu, Wei-Da Hu*, Lu Chen, Chun Lin, Xiang-Ai Cheng, Xiao-Shuang Chen, and Wei Lu, Dark Current Transport and Avalanche Mechanism in HgCdTe Electron-Avalanche Photodiodes, IEEE Transactions on Electron Devices, 62, 1926-1931 (2015).  
 
2014
[13] Vishnu Gopal*, Weicheng Qiu and Weida Hu*, Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors, Journal of Applied Physics, 116, 184503 (2014).
[12] Weicheng Qiu, Weida Hu*, Tie Lin, Xiang’ai Cheng, Rui Wang, Fei Yin, Bo Zhang, Xiaoshuang Chen, and Wei Lu, Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope, Applied Physics Letters, 105, 191106 (2014).
[11] Nan Guo, Weida Hu*, Lei Liao*, SenPo Yip, Johnny C Ho, Jinshui Miao, Zhi Zhang, Jin Zou, Tao Jiang, Shiwei Wu, Xiaoshuang Chen, Wei Lu*, Anomalous and highly-efficient InAs nanowire phototransistors based on majority carrier transport at room temperature. Advanced Materials, 26, 8203-8209 (2014).
[10] Xingqiang Liu, Xi Liu, Jingli Wang, Chonglan Liao, Xiangheng Xiao, Shishang Guo, Changzhong Jiang, Zhiyong Fan, Ti Wang, Xiaoshuang Chen, Wei Lu, Weida Hu*, Lei Liao*, Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors, Advanced Materials, 26, 7399-7404 (2014).
[9] Jinshui Miao, Weida Hu,* Nan Guo, Zhenyu Lu, Xuming Zou, Lei Liao*, Suixing Shi, Pingping Chen, Zhiyong Fan, Johnny C. Ho, Tian-Xin Li, Xiao Shuang Chen*, and Wei Lu, Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors, ACS Nano, 8, 3628-3635 (2014). ESI Highly Cited Paper
[8] Weida Hu*, Zhenhua Ye, Lei Liao, Honglei Chen, Lu Chen, Ruijun Ding, Li He, Xiaoshuang Chen, and Wei Lu, 128 x 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk, Optics Letters, 39, 5130-5133 (2014).  
[7] Jian Liang, Weida Hu*, Zhenhua Ye, Lei Liao, Zhifeng Li, Xiaoshuang Chen, and Wei Lu, Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure, Journal of Applied Physics, 115, 184504 (2014).
 
2013 and before
[6] Weida Hu*, Xiaoshuang Chen*, Zhenhua Ye,, Ali Feng, Fei Yin, Bo Zhang, Lei Liao, and Wei Lu, Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for Long-wavelength HgCdTe-based Photovoltaic Infrared Detector Pixel Arrays, IEEE Journal of Selected Topics in Quantum Electronics, 19, 4100107 (2013).
[5] Nan Guo, Wei-Da Hu,* Xiao-Shuang Chen, Lin Wang, and Wei Lu, Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates, Optics Express, 21, 1606–1614 (2013)
[4] Weida Hu*, Xiaoshuang Chen*, Zhenhua Ye, Yongguo Chen, Fei Yin, Bo Zhang, and Wei Lu, Polarity Inversion and Coupling of Laser Beam Induced Current in As-doped Long-wavelength HgCdTe Infrared Detector Pixel Arrays: Experiment and Simulation, Applied Physics Letters, 101, 181108 (2012).
[3] W. D. Hu*, X. S. Chen*, Z. H. Ye, W. Lu*, A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density Hydrogen plasma modification, Applied Physics Letters, 99, 091101 (2011).
[2] Jun Wang, Xiao-Shuang Chen*, Wei-Da Hu*, Lin Wang, Wei Lu, Faqiang Xu, Jun Zhao, Yanli Shi, Rongbin Ji, Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K, Applied Physics Letters, 99, 113508 (2011).
[1] W. D. Hu*, X. S. Chen, F. Yin, Z. J. Quan, Z. H. Ye, X. N. Hu, Z. F. Li, and W. Lu, Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors, Journal of Applied Physics, 105, 104502 (2009).


Awards and Honors

Highly Cited Chinese Researchers (Scopus)(2020)
Program of Shanghai Academic Research Leader (2019) 上海市优秀学术带头人计划
China Youth Science and Technology Award (2018) 中国青年科技奖
Shanghai Youth Technology Talents (2018) 上海青年科技英才
Royal Society-Newton Advanced Fellowship (2017) 英国皇家学会牛顿高级学者计划
National Science Foundation for Distinguished Young Scholars (2017) 国家杰出青年基金
Ten Thousand Talents Program for Young Talents (2015) 国家“万人计划”青年拔尖人才
The 4th Excellent Young Innovative Talents of Science and Technology of Shanghai Branch of Chinese Academy of Science (2014)
National Science Foundation for Excellent Young Scholars (2013) 国家优秀青年基金
Shanghai Rising-Star Program (2012)  上海市青年科技启明星计划
Chinese Academy of Sciences Lu Jia Xi young scientist Awards (2011)
Member of Youth Innovation Promotion Association Program (2011)
CAS President Scholarship (2007)

Professional activities

2015 - present, Infrared Physics & Technology (Elsevier, SCI Impact factor =2.638), Associate Editor  
2013 - present, Optical and Quantum Electronics (Springer publishing, SCI Impact factor =2.084), Executive Editor 
2020 - present, Nano Express (IOP publishing), Editorial Board
2020 - present, Science China-Physics Mechanics & Astronomy (Springer, SCI Impact factor =5.122),  Young Scientist Committee
2015 - present, SPIE DCS Defense and Security, Infrared Technology and Applications (USA), Program Committee
2013 - present, International Conference on Numerical Simulation of Optoelectronic Devices (Canada, Spain, Chinese Taipei, China, USA, China Hangkong), Program Committee, Session Chair 
2018 - present, Journal of Infrared and Millimeter Waves, Editorial Board 

Students

Undergraduate students
Tao Zhang张涛,硕博连读生,080903-微电子学与固体电子学
Yue Chen陈玥,硕博连读生,080903-微电子学与固体电子学
Anna Liu刘安娜,硕博连读生,080903-微电子学与固体电子学
Yiye Yu余羿叶,硕博连读生,080903-微电子学与固体电子学
M. ZUBAIR,PHD student,funded by ASNO
Hangyu Xu许航瑀,硕博连读生,080903-微电子学与固体电子学 获2021国家奖学金 
Jiaxiang Guo郭家祥,硕博连读生,080903-微电子学与固体电子学
Tangxin Li李唐鑫,硕博连读生,080903-微电子学与固体电子学
Jinjin Wang王金津,硕博连读生,080903-微电子学与固体电子学
Hao Wang王昊,硕博连读生,080903-微电子学与固体电子学 获2020国家奖学金
Yue Gu古悦,硕博连读生,080903-微电子学与固体电子学
Zhenhan Zhang张振汉,硕博连读生,080903-微电子学与固体电子学
Yunfeng Chen 陈允枫,硕博连读生,080903-微电子学与固体电子学 获2021国家奖学金 
Peisong Wu 吴培松,硕博连读生,080903-微电子学与固体电子学
Hailu Wang 王海露,硕博连读生,080903-微电子学与固体电子学 获2019国家奖学金、获2021国家奖学金
Jiafu Ye 叶家富,硕博连读生,080903-微电子学与固体电子学
Haonan Ge 葛浩楠,硕博连读生,080903-微电子学与固体电子学
Yang Wang 汪洋,博士生,080903-微电子学与固体电子学
Fang Zhong 仲方,硕博连读生,080903-微电子学与固体电子学
Meng Peng 彭孟,硕博连读生,080903-微电子学与固体电子学

Postgraduate students:
Yongguo Chen 陈勇国,硕士研究生,微电子学与固体电子学,毕业去向:工信部电子五所(广州)
Xiaodong Wang 王晓东,硕博连读生,微电子学与固体电子学,毕业去向:中国电子科技集团公司第五十研究所(上海),院长优秀奖获得者
Jinshui Miao 苗金水,硕士研究生,凝聚态物理,毕业去向:密西根州立大学和宾夕法尼亚大学留学(美国),2019年回所工作,国家奖学金获得者,上海市优秀硕士论文获得者,国家青年海外高层次人才计划获得者
Nan Guo 郭楠,硕博连读生,微电子学与固体电子学,毕业去向:中国空间技术研究院,钱学森空间技术实验室(北京),国家奖学金获得者(2013年度、2014年度),中科院优秀博士论文获得者
Jian Liang 梁健,硕博连读生,微电子学与固体电子学,毕业去向:国家知识产权局专利局专利审查协作湖北中心(武汉)
Weicheng Qiu 邱伟成,硕博连读生,微电子学与固体电子学,毕业去向:国防科技大学(湖南)
Peng Wang 王鹏,硕博连读生,微电子学与固体电子学,毕业去向:中科院上海技术物理研究所(留所,上海),国家优秀青年基金获得者
Hehai Fang 方河海,硕博连读生,微电子学与固体电子学,毕业去向:华为(上海),国家奖学金获得者(2016年度、2017年度),院长特别奖获得者,中科院优秀博士论文获得者
Wenjin Luo 骆文锦,硕博连读生,微电子学与固体电子学,毕业去向:卡罗拉多大学留学(美国), 院长特别奖获得者,中科院优秀博士论文获得者
Yicheng Tang 唐祎程,博士生,微电子学与固体电子学,毕业去向:上海某研究所 (上海)
Man Luo 罗曼,硕博连读生,微电子学与固体电子学,毕业去向:南通大学(江苏) 
Qing Li 李庆,博士生,微电子学与固体电子学,国科大杭州高等研究院(博士后,杭州),院长优秀奖获得者
Zhen Wang 王振,硕博连读生,凝聚态物理,毕业去向:中科院上海技术物理研究所(博士后,上海), 国家奖学金获得者(2018年度、2019年度),院长特别奖获得者
Jiale He 何家乐,博士生,微电子学与固体电子学,毕业去向:国科大杭州高等研究院(博士后,杭州)
Runzhang Xie 谢润章,硕博连读生,微电子学与固体电子学,毕业去向:中科院上海技术物理研究所(博士后,上海),院长特别奖获得者
Ting He 贺婷,硕博连读生,微电子学与固体电子学,毕业去向:国科大杭州高等研究院(博士后,杭州)