基本信息
胡志远 男 中国科学院上海微系统与信息技术研究所
电子邮件： zyhu@mail.sim.ac.cn
通信地址： 上海市长宁区长宁路865号8号楼510室
邮政编码：
电子邮件： zyhu@mail.sim.ac.cn
通信地址： 上海市长宁区长宁路865号8号楼510室
邮政编码：
招生信息
招生专业
080903-微电子学与固体电子学
招生方向
高可靠SOI工艺及器件，高可靠SOI电路
教育背景
2007-09--2012-06 中国科学院上海微系统与信息技术研究所 博士学位
2003-09--2007-06 武汉大学 学士学位
2003-09--2007-06 武汉大学 学士学位
工作经历
工作简历
2020-01~2024-05,中国科学院上海微系统与信息技术研究所, 高级工程师（副研级）
2012-08~2019-12,中国科学院上海微系统与信息技术研究所, 助理研究员
2007-09~2012-06,中国科学院上海微系统与信息技术研究所, 博士学位
2003-09~2007-06,武汉大学, 学士学位
2012-08~2019-12,中国科学院上海微系统与信息技术研究所, 助理研究员
2007-09~2012-06,中国科学院上海微系统与信息技术研究所, 博士学位
2003-09~2007-06,武汉大学, 学士学位
专利与奖励
奖励信息
（1） 8英寸特种SOI材料研制及工程化, 二等奖, 省级, 2019
出版信息
发表论文
（1） A Novel High-Precision Single-Event Transient Hardened Voltage Comparator Design, International Journal of Circuit Theory and Applications, 2023, 第 5 作者
（2） High-Performance and Highly-Stable Soft Error Resistant 12t Sram Cell for Space Applications, Microelectronics Reliability, 2023, 第 5 作者
（3） Effect of Total Dose Irradiation on Parasitic Bjt in 130 Nm Pdsoi Mosfets, Micromachines, 2023, 第 4 作者
（4） Analysis of Dc Characteristics in Pdsoi Pmosfets under the Combined Effect of Nbti and Tid, Ieee Transactions on Nuclear Science, 2022, 第 6 作者
（5） The Characterization of the Built-in Bipolar Junction Transistor in H-Gate Pd-Soi Nmos, Solid-State Electronics, 2021, 第 4 作者
（6） Investigation of Radiation Hardening by Back-Channel Adjustment in Pdsoi Mosfets, Ieee Transactions on Nuclear Science, 2021, 第 4 作者
（7） Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET, IEICE ELECTRONICS EXPRESS, 2020, 第 4 作者
（8） A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology, MICROELECTRONICS RELIABILITY, 2020, 第 4 作者
（9） A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film Pdsoi Technology: Phenomena, Analyses, and Models, Ieee Transactions on Nuclear Science, 2020, 第 5 作者
（10） 硅基光电子器件的辐射效应研究进展, Progress of radiation effects of silicon photonics devices, ACTA PHYSICA SINICA, 2019, 第 2 作者
（11） Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer, IEICE ELECTRONICS EXPRESS, 2019, 第 5 作者
（12） An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 7 作者
（13） The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer, MICROELECTRONICS RELIABILITY, 2019, 第 4 作者
（14） Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide, IEICE ELECTRONICS EXPRESS, 2018, 第 1 作者
（15） Research on the radiation hardened SOI devices with single-step Si ion implantation, Research on the radiation hardened SOI devices with single-step Si ion implantation, Chinese Physics B, 2018, 第 3 作者
（16） Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Chinese Physics Letters, 2018, 第 5 作者
（17） Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET, Influence of characteristics��� measurement sequence on total ionizing dose effect in PDSOI nMOSFET, Chinese Physics B, 2018, 第 3 作者
（18） Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 2 作者
（19） Enhanced radiation-induced narrow channel effects in 0.13-mu m PDSOI nMOSFETs with shallow trench isolation, CHINESE PHYSICS B, 2018, 第 2 作者
（20） Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 第 7 作者
（21） Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs, Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs, Chinese Physics B, 2017, 第 2 作者 通讯作者
（22） Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs, MICROELECTRONICS RELIABILITY, 2017, 第 5 作者
（23） Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology, MICROELECTRONICSRELIABILITY, 2017, 第 2 作者
（24） Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI, SOLID-STATE ELECTRONICS, 2017, 第 2 作者
（25） Total Ionizing Dose Response of Different Length Devices in 0.13 mu m Partially Depleted Silicon-on-Insulator Technology, CHINESE PHYSICS LETTERS, 2017, 第 2 作者
（26） Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 第 4 作者
（27） Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 第 2 作者
（28） Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET, SOLID-STATE ELECTRONICS, 2015, 第 2 作者
（29） Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs, Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs, Chinese Physics B, 2014, 第 2 作者
（30） Total ionizing dose effect in 0.2 mu m PDSOI NMOSFETs with shallow trench isolation, MICROELECTRONICS RELIABILITY, 2014, 第 2 作者
（31） Bias dependence of TID radiation responses of 0.13 mu m partially depleted SOI NMOSFETs, MICROELECTRONICS RELIABILITY, 2013, 第 5 作者
（32） A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 第 2 作者
（33） Effects of total ionizing dose on narrow-channel SOI NMOSFETs, ACTA PHYSICA SINICA, 2013, 第 2 作者
（34） Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors, Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors, Chinese Physics Letters, 2013, 第 3 作者
（35） 总剂量辐照效应对窄沟道SOI NMOSFET器件的影响, Effects of total ionizing dose on narrow-channel SOI NMOSFETs, ACTA PHYSICA SINICA, 2013, 第 2 作者
（36） Influence of drain and substrate bias on the TID effect for deep submicron technology devices, Influence of drain and substrate bias on the TID effect for deep submicron technology devices, 半导体学报, 2012, 第 3 作者
（37） Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology, MICROELECTRONICS RELIABILITY, 2012, 第 4 作者
（38） The influence of channel length on total ionizing dose effect in deep submicron technologies, ACTA PHYSICA SINICA, 2012, 第 1 作者 通讯作者
（39） Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices, Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices, Chinese Physics Letters, 2011, 第 2 作者
（40） Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 2 作者
（41） Total ionizing dose effects in elementary devices for 180-nm flash technologies, MICROELECTRONICS RELIABILITY, 2011, 第 1 作者 通讯作者
（42） Total ionizing dose effect in an input/output device for flash memory, Total ionizing dose effect in an input/output device for flash memory, Chinese Physics B, 2011, 第 2 作者
（43） Analysis of bias effects on the total ionizing dose response in a 180 nm technology, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 第 2 作者
（44） Impact of substrate bias on radiation-induced edge effects in MOSFETs, Impact of substrate bias on radiation-induced edge effects in MOSFETs, Chinese Physics B, 2011, 第 1 作者 通讯作者
（45） Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（46） Radiation induced inter-device leakage degradation, Radiation induced inter-device leakage degradation, Chinese Physics C, 2011, 第 1 作者 通讯作者
（47） Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（48） Impact of within-wafer process variability on radiation response, MICROELECTRONICS JOURNAL, 2011, 第 1 作者 通讯作者
（49） The impact of total ionizing radiation on body effect, MICROELECTRONICS JOURNAL, 2011, 第 2 作者
（50） Total ionizing dose effect of 0. 18 mu M nMOSFETs, ACTA PHYSICA SINICA, 2011, 第 2 作者
（51） Radiation Hardening by Applying Substrate Bias, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（52） Radiation induced inter-device leakage degradation, Radiation induced inter-device leakage degradation, 中国物理C：英文版, 2011, 第 1 作者
（53） Impact of substrate bias on radiation-induced edge effects in MOSFETs, Impact of substrate bias on radiation-induced edge effects in MOSFETs, 中国物理：英文版, 2011, 第 1 作者
（54） Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Bias dependence of a deep submicron NMOSFET response to total dose irradiation, 中国物理：英文版, 2011, 第 2 作者
（55） Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Chinese Physics B, 2011, 第 2 作者
（56） Total ionizing dose effects in high voltage devices for flash memory, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 第 2 作者
（2） High-Performance and Highly-Stable Soft Error Resistant 12t Sram Cell for Space Applications, Microelectronics Reliability, 2023, 第 5 作者
（3） Effect of Total Dose Irradiation on Parasitic Bjt in 130 Nm Pdsoi Mosfets, Micromachines, 2023, 第 4 作者
（4） Analysis of Dc Characteristics in Pdsoi Pmosfets under the Combined Effect of Nbti and Tid, Ieee Transactions on Nuclear Science, 2022, 第 6 作者
（5） The Characterization of the Built-in Bipolar Junction Transistor in H-Gate Pd-Soi Nmos, Solid-State Electronics, 2021, 第 4 作者
（6） Investigation of Radiation Hardening by Back-Channel Adjustment in Pdsoi Mosfets, Ieee Transactions on Nuclear Science, 2021, 第 4 作者
（7） Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET, IEICE ELECTRONICS EXPRESS, 2020, 第 4 作者
（8） A comprehensive evaluation of radiation hardening by applying negative body bias and back-gate bias in 130 nm PDSOI technology, MICROELECTRONICS RELIABILITY, 2020, 第 4 作者
（9） A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film Pdsoi Technology: Phenomena, Analyses, and Models, Ieee Transactions on Nuclear Science, 2020, 第 5 作者
（10） 硅基光电子器件的辐射效应研究进展, Progress of radiation effects of silicon photonics devices, ACTA PHYSICA SINICA, 2019, 第 2 作者
（11） Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer, IEICE ELECTRONICS EXPRESS, 2019, 第 5 作者
（12） An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 第 7 作者
（13） The analysis of the anomalous hot-carrier effect in partially depleted SOI pMOSFETs fabricated on modified wafer, MICROELECTRONICS RELIABILITY, 2019, 第 4 作者
（14） Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide, IEICE ELECTRONICS EXPRESS, 2018, 第 1 作者
（15） Research on the radiation hardened SOI devices with single-step Si ion implantation, Research on the radiation hardened SOI devices with single-step Si ion implantation, Chinese Physics B, 2018, 第 3 作者
（16） Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Metastable Electron Traps in Modified Silicon-on-Insulator Wafer, Chinese Physics Letters, 2018, 第 5 作者
（17） Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET, Influence of characteristics��� measurement sequence on total ionizing dose effect in PDSOI nMOSFET, Chinese Physics B, 2018, 第 3 作者
（18） Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 第 2 作者
（19） Enhanced radiation-induced narrow channel effects in 0.13-mu m PDSOI nMOSFETs with shallow trench isolation, CHINESE PHYSICS B, 2018, 第 2 作者
（20） Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 第 7 作者
（21） Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs, Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs, Chinese Physics B, 2017, 第 2 作者 通讯作者
（22） Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs, MICROELECTRONICS RELIABILITY, 2017, 第 5 作者
（23） Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology, MICROELECTRONICSRELIABILITY, 2017, 第 2 作者
（24） Steep subthreshold slope characteristics of body tied to gate NMOSFET in partially depleted SOI, SOLID-STATE ELECTRONICS, 2017, 第 2 作者
（25） Total Ionizing Dose Response of Different Length Devices in 0.13 mu m Partially Depleted Silicon-on-Insulator Technology, CHINESE PHYSICS LETTERS, 2017, 第 2 作者
（26） Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 第 4 作者
（27） Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 第 2 作者
（28） Radiation-enhanced gate-induced-drain-leakage current in the 130 nm partially-depleted SOI pMOSFET, SOLID-STATE ELECTRONICS, 2015, 第 2 作者
（29） Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs, Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs, Chinese Physics B, 2014, 第 2 作者
（30） Total ionizing dose effect in 0.2 mu m PDSOI NMOSFETs with shallow trench isolation, MICROELECTRONICS RELIABILITY, 2014, 第 2 作者
（31） Bias dependence of TID radiation responses of 0.13 mu m partially depleted SOI NMOSFETs, MICROELECTRONICS RELIABILITY, 2013, 第 5 作者
（32） A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 第 2 作者
（33） Effects of total ionizing dose on narrow-channel SOI NMOSFETs, ACTA PHYSICA SINICA, 2013, 第 2 作者
（34） Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors, Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors, Chinese Physics Letters, 2013, 第 3 作者
（35） 总剂量辐照效应对窄沟道SOI NMOSFET器件的影响, Effects of total ionizing dose on narrow-channel SOI NMOSFETs, ACTA PHYSICA SINICA, 2013, 第 2 作者
（36） Influence of drain and substrate bias on the TID effect for deep submicron technology devices, Influence of drain and substrate bias on the TID effect for deep submicron technology devices, 半导体学报, 2012, 第 3 作者
（37） Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology, MICROELECTRONICS RELIABILITY, 2012, 第 4 作者
（38） The influence of channel length on total ionizing dose effect in deep submicron technologies, ACTA PHYSICA SINICA, 2012, 第 1 作者 通讯作者
（39） Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices, Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices, Chinese Physics Letters, 2011, 第 2 作者
（40） Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 2 作者
（41） Total ionizing dose effects in elementary devices for 180-nm flash technologies, MICROELECTRONICS RELIABILITY, 2011, 第 1 作者 通讯作者
（42） Total ionizing dose effect in an input/output device for flash memory, Total ionizing dose effect in an input/output device for flash memory, Chinese Physics B, 2011, 第 2 作者
（43） Analysis of bias effects on the total ionizing dose response in a 180 nm technology, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 第 2 作者
（44） Impact of substrate bias on radiation-induced edge effects in MOSFETs, Impact of substrate bias on radiation-induced edge effects in MOSFETs, Chinese Physics B, 2011, 第 1 作者 通讯作者
（45） Comprehensive Study on the Total Dose Effects in a 180-nm CMOS Technology, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（46） Radiation induced inter-device leakage degradation, Radiation induced inter-device leakage degradation, Chinese Physics C, 2011, 第 1 作者 通讯作者
（47） Simple Method for Extracting Effective Sheet Charge Density Along STI Sidewalls Due to Radiation, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（48） Impact of within-wafer process variability on radiation response, MICROELECTRONICS JOURNAL, 2011, 第 1 作者 通讯作者
（49） The impact of total ionizing radiation on body effect, MICROELECTRONICS JOURNAL, 2011, 第 2 作者
（50） Total ionizing dose effect of 0. 18 mu M nMOSFETs, ACTA PHYSICA SINICA, 2011, 第 2 作者
（51） Radiation Hardening by Applying Substrate Bias, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 第 1 作者 通讯作者
（52） Radiation induced inter-device leakage degradation, Radiation induced inter-device leakage degradation, 中国物理C：英文版, 2011, 第 1 作者
（53） Impact of substrate bias on radiation-induced edge effects in MOSFETs, Impact of substrate bias on radiation-induced edge effects in MOSFETs, 中国物理：英文版, 2011, 第 1 作者
（54） Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Bias dependence of a deep submicron NMOSFET response to total dose irradiation, 中国物理：英文版, 2011, 第 2 作者
（55） Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Bias dependence of a deep submicron NMOSFET response to total dose irradiation, Chinese Physics B, 2011, 第 2 作者
（56） Total ionizing dose effects in high voltage devices for flash memory, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 第 2 作者
科研活动
科研项目
（ 1 ） 130nm SOI 工艺流片, 负责人, 其他, 2024-05--2025-09