080903-微电子学与固体电子学

功率半导体器件，功率集成电路

2010-09--2015-06   香港科技大学   哲学博士
2007-09--2010-06   电子科技大学   工学硕士
2003-09--2007-07   电子科技大学   工学学士

   

2015-01~2021-02,华为技术有限公司, 主任工程师

   

（1） 中国电子学会科学技术奖, 二等奖, 其他, 2022

   

（1） Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition, APPLIED SURFACE SCIENCE, 2023, 第 4 作者
（2） Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures, MICROELECTRONIC ENGINEERING, 2023, 通讯作者
（3） Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier, ELECTRONICS, 2022, 第 4 作者
（4） An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage, IEEE ELECTRON DEVICE LETTERS, 2022, 通讯作者
（5） Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs, Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs, 半导体学报:英文版, 2022, 通讯作者
（6） Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 第 4 作者
（7） Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy, IEEE ELECTRON DEVICE LETTERS, 2022, 第 3 作者
（8） Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy, APPLIED PHYSICS LETTERS, 2021, 通讯作者
（9） Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess, Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess, 半导体学报:英文版, 2021, 第 4 作者
（10） Impact of Vth Insability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC, IEEE ELECTRON DEVICE LETTERS, 2021, 通讯作者
（11） A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 通讯作者
（12） Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 通讯作者
（13） 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI Platform, IEEE ELECTRON DEVICE LETTERS, 2013, 通讯作者
（14） Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices, IEEE ELECTRON DEVICE LETTERS, 2012, 第 2 作者
（15） Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film, IEEE ELECTRON DEVICE LETTERS, 2012, 第 2 作者
（16） A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 通讯作者

   

（ 1 ） 超薄势垒Si基GaN增强型器件与单片集成技术, 负责人, 地方任务, 2021-08--2023-08